KR890011068A - Silver-filled glass - Google Patents

Silver-filled glass Download PDF

Info

Publication number
KR890011068A
KR890011068A KR1019880017416A KR880017416A KR890011068A KR 890011068 A KR890011068 A KR 890011068A KR 1019880017416 A KR1019880017416 A KR 1019880017416A KR 880017416 A KR880017416 A KR 880017416A KR 890011068 A KR890011068 A KR 890011068A
Authority
KR
South Korea
Prior art keywords
glass
paste
lead phosphate
silver
lead
Prior art date
Application number
KR1019880017416A
Other languages
Korean (ko)
Other versions
KR970007179B1 (en
Inventor
맥스웰 그레빌 윌리엄 데이비 니켈
조지 페리어 고든
Original Assignee
아이 시 위샤트
존슨 맛쎄이 퍼블릭 리미티드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이 시 위샤트, 존슨 맛쎄이 퍼블릭 리미티드 캄파니 filed Critical 아이 시 위샤트
Publication of KR890011068A publication Critical patent/KR890011068A/en
Application granted granted Critical
Publication of KR970007179B1 publication Critical patent/KR970007179B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Abstract

내용 없음No content

Description

은-충전유리Silver-filled glass

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (15)

제거될 유기성 비히클에 분산된 미세하게 분할된 은입자 및 유리로 구성되었으며 상기 유리가 인산납유리인 것을 특징으로 하는 전자부품을 위한 결합성 페이스트.A bonding paste for an electronic component, consisting of finely divided silver particles and glass dispersed in an organic vehicle to be removed, wherein the glass is lead phosphate glass. 제 1 항에 있어서, 유리의 연화온도가 150 내지 140℃범위인 것을 특징으로 하는 페이스트.The paste according to claim 1, wherein the softening temperature of the glass is in the range of 150 to 140 ° C. 제 1 항 또는 2항에 있어서, 인산납, 유리가 마그네슘, 칼슘, 스트론튬, 바륨, 카드뮴, 붕소, 실리콘 및 바나듐의 산화물중 한가지 이상을 더 포함하는 것을 특징으로 하는 페이스트.The paste of claim 1 or 2, wherein the lead phosphate, glass further comprises one or more of oxides of magnesium, calcium, strontium, barium, cadmium, boron, silicon and vanadium. 제 3 항에 있어서, 인산납 유리가 오산화바나듐을 함유하는 것을 특징으로 하는 페이스트.The paste according to claim 3, wherein the lead phosphate glass contains vanadium pentoxide. 상기 항 중 어느 한 항에 있어서, 인산납 유리가 감지할 수 없을 정도량의 알칼리 금속 성분을 함유함을 특징으로 하는 페이스트.The paste according to any one of the preceding claims, wherein the lead phosphate glass contains an undetectable amount of an alkali metal component. 상기 항 중 어느 한 항에 있어서, 은이 평균 최대치수가 약 10㎛의 은 플레이크인 것을 특징으로 하는 페이스트.The paste of claim 1 wherein the silver is silver flakes having an average maximum dimension of about 10 μm. 상기 항 중 어느 한 항에 있어서, 인산납 유리가 50내지 60몰%의 Pbo, 10 내지 20몰%의 P2O5및 20내지 30몰%의 V2O5로 사실상 구성되어 총 10몰%로 이루어짐을 특징으로 하는 페이스트.The method of claim 1, wherein the lead phosphate glass is substantially composed of 50 to 60 mol% Pbo, 10 to 20 mol% P 2 O 5 and 20 to 30 mol% V 2 O 5 in total of 10 mol% Paste, characterized in that consisting of. 소성된 은-충전된 유리 페이스트를 사용하며, 페이스트의 인산납 유리인 것을 특징으로 하는 기판에 전자부품을 결합시키는 방법.A method of bonding an electronic component to a substrate using a fired silver-filled glass paste, wherein the paste is lead phosphate glass. 제 8 항에 있어서 구조물을 400℃이하의 온도로 소성시켜 결합을 형성시키는 것을 특징으로 하는 방법.The method of claim 8, wherein the structure is fired at a temperature of 400 ° C. or less to form bonds. 제 9 항에 있어서 구조물을 380℃이하의 온도로 소성시키는 것을 특징으로 하는 방법.10. The method of claim 9, wherein the structure is fired at a temperature of 380 ° C or less. 제10항에 있어서 구조물을 350℃ 또는 그 이하의 온도에서 소성시키는 것을 특징으로 하는 방법.The method of claim 10, wherein the structure is fired at a temperature of 350 ° C. or less. 제 8 항 내지 12항 중 어느 한 항에 있어서, 인산납 유리가 마그네슘, 칼슘, 스트론튬, 바륨, 카드뮴, 붕소, 실리콘 및 바나듐의 산화물중 하나 또는 그 이상을 포함하는 것을 특징으로 하는 방법.The method of claim 8, wherein the lead phosphate glass comprises one or more of oxides of magnesium, calcium, strontium, barium, cadmium, boron, silicon and vanadium. 제12항에 있어서, 인산납 유리가 오산화바나듐을 포함하는 것을 특징으로 하는 방법.13. The method of claim 12, wherein the lead phosphate glass comprises vanadium pentoxide. 소성된 은-충전된 유리 페이스트에 의해 시판에 결합된 전자부품으로 이루어졌으며 유리가 인산납인 것을 특징으로 하는 결합된 구조물.A bonded structure consisting of electronic components commercially bonded by fired silver-filled glass paste, wherein the glass is lead phosphate. 제14항에 있어서, 유리가 포스포바나듐산 납-유리인 것을 특징으로 하는 결합된 구조물.15. The bonded structure of claim 14, wherein the glass is lead phosphovanate acid lead-glass. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880017416A 1987-12-24 1988-12-24 Silver-filled glass KR970007179B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB878730196A GB8730196D0 (en) 1987-12-24 1987-12-24 Silver-filled glass
GB8730196 1987-12-24
GB30196 1987-12-24

Publications (2)

Publication Number Publication Date
KR890011068A true KR890011068A (en) 1989-08-12
KR970007179B1 KR970007179B1 (en) 1997-05-03

Family

ID=10629094

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880017416A KR970007179B1 (en) 1987-12-24 1988-12-24 Silver-filled glass

Country Status (7)

Country Link
US (1) US4996171A (en)
EP (1) EP0323107A3 (en)
JP (1) JPH01223738A (en)
KR (1) KR970007179B1 (en)
FI (1) FI885973A (en)
GB (1) GB8730196D0 (en)
IE (1) IE883822L (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0686309B2 (en) * 1989-02-23 1994-11-02 株式会社日立製作所 Magnetic head, manufacturing method thereof, and magnetic recording / reproducing apparatus
US5183784A (en) * 1990-02-21 1993-02-02 Johnson Matthey Inc. Silver-glass pastes
US5075262A (en) * 1990-02-21 1991-12-24 Johnson Matthey, Inc. Silver-glass pastes
DE4013256C1 (en) * 1990-04-26 1991-10-24 Degussa Ag, 6000 Frankfurt, De Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powder
DE4128804A1 (en) * 1991-08-30 1993-03-04 Demetron Lead-free low melting glass - contains silver oxide, vanadium oxide and tellurium oxide, used as soldering paste for electrical components
US5663109A (en) * 1992-10-19 1997-09-02 Quantum Materials, Inc. Low temperature glass paste with high metal to glass ratio
US5334558A (en) * 1992-10-19 1994-08-02 Diemat, Inc. Low temperature glass with improved thermal stress properties and method of use
US5391604A (en) * 1993-07-30 1995-02-21 Diemat, Inc. Adhesive paste containing polymeric resin
US6103648A (en) * 1998-05-28 2000-08-15 Circon Corporation Bulk conducting glass compositions and fibers
US6788552B1 (en) * 2000-08-30 2004-09-07 Micron Technology, Inc. Method and apparatus for reducing substrate bias voltage drop
KR100909735B1 (en) * 2001-02-06 2009-07-29 파나소닉 주식회사 Plasma Display Panel And Method Of Manufacturing The Same
US6743380B2 (en) * 2001-12-28 2004-06-01 Caterpillar Inc High temperature electrically conductive material
JP2008251319A (en) * 2007-03-30 2008-10-16 Hitachi Ltd Plasma display panel
DE102008008535A1 (en) * 2008-02-11 2009-08-13 Robert Bosch Gmbh Device for fixing an electronic component such as semiconductor element
JP5633284B2 (en) * 2010-01-25 2014-12-03 日立化成株式会社 Electrode paste composition and solar cell
WO2015152994A1 (en) * 2014-04-02 2015-10-08 Ferro Corporation Conductive paste with improved performance in glass strength

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497774A (en) * 1967-06-07 1970-02-24 Beckman Instruments Inc Electrical circuit module and method of manufacture
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
GB2104058A (en) * 1981-08-03 1983-03-02 Avx Corp Silver-filled glass metallizing paste
US4401767A (en) * 1981-08-03 1983-08-30 Johnson Matthey Inc. Silver-filled glass
DE3227815A1 (en) * 1981-08-03 1983-02-24 Johnson Matthey Inc., Malvern, Pa. METALIZING PASTE CONTAINING SILVER AND THE USE THEREOF FOR GLUING SILICON SEMICONDUCTORS ON SUBSTRATES
US4436785A (en) * 1982-03-08 1984-03-13 Johnson Matthey Inc. Silver-filled glass
US4459166A (en) * 1982-03-08 1984-07-10 Johnson Matthey Inc. Method of bonding an electronic device to a ceramic substrate
EP0198660A1 (en) * 1985-04-17 1986-10-22 Johnson Matthey, Inc., Silver-filled glass metallizing pastes
US4636254A (en) * 1985-07-23 1987-01-13 Quantum Materials, Inc. Silver-glass paste for attachment of silicon die to ceramic substrate
US4699888A (en) * 1985-09-16 1987-10-13 Technology Glass Corporation Die/attach composition
US4743302A (en) * 1986-06-06 1988-05-10 Vlsi Packaging Materials, Inc. Low melting glass composition
US4761224A (en) * 1986-03-10 1988-08-02 Quantum Materials Inc. Silver-glass paste with poly-modal flake size distribution and quick dry vehicle
US4881974A (en) * 1987-11-05 1989-11-21 Johnson Matthey, Inc. Silver-glass paste

Also Published As

Publication number Publication date
GB8730196D0 (en) 1988-02-03
US4996171A (en) 1991-02-26
FI885973A (en) 1989-06-25
IE883822L (en) 1989-06-24
EP0323107A3 (en) 1990-06-20
KR970007179B1 (en) 1997-05-03
JPH01223738A (en) 1989-09-06
EP0323107A2 (en) 1989-07-05

Similar Documents

Publication Publication Date Title
KR890011068A (en) Silver-filled glass
KR910021458A (en) Improved silver-glass paste
EP0283590A3 (en) Electrical components
ATE29052T1 (en) MACHINE PARTS CONSISTING OF A COMPOSITION OF CERAMIC COMPONENTS AND METAL COMPONENTS.
GB1528222A (en) Sealing glass composition
ES2115825T3 (en) CONDUCTIVE COATINGS CONTAINING SILVER.
GB1493669A (en) Cordierite glasses and glass-ceramics
KR940009087A (en) Flat Packaged Piezoelectric Devices Using Glass-Ceramic Composites Containing Goto-Olivite As Ceramics
BR7906300A (en) COMPOSITION OF PERFECTED THERMOPLASTIC RESIN AND PROCESS TO IMPROVE THE ADHESION BETWEEN A THERMOPLASTIC RESIN AND AN INORGANIC OXIDE SUBSTRATE
GB2104058A (en) Silver-filled glass metallizing paste
JPS5536828A (en) Production of liquid crystal display element
GB1359050A (en) Sealing glass compositions
IE821840L (en) Silver filled glass
KR860008032A (en) Silver-filled glass metallization paste
SE8503204D0 (en) GLASS WITH ANJONIC WIRING FORM WITH REGARD TO FLUOR
JPS6454768A (en) Manufacture of thin film solar cell
BR8406632A (en) PROCESS FOR THE MANUFACTURE OF LUMINESCENT GLASS
KR900005492A (en) Insulator composition with thermal expansion control
GB1387267A (en) Thick film circuits
GB1264697A (en)
GB1144196A (en) Method of manufacturing electrical capacitors
GB733260A (en) Improvements in electroluminescent lamps
DE3472269D1 (en) Fluorescent corrosive fluoride solution
GB1001178A (en) Porous glass getter and method of application
JPS5323286A (en) Semiconductor pressore, differential pressure tran smission device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee