KR890008939A - Vertical vapor phase growth apparatus and method - Google Patents

Vertical vapor phase growth apparatus and method Download PDF

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Publication number
KR890008939A
KR890008939A KR1019880013517A KR880013517A KR890008939A KR 890008939 A KR890008939 A KR 890008939A KR 1019880013517 A KR1019880013517 A KR 1019880013517A KR 880013517 A KR880013517 A KR 880013517A KR 890008939 A KR890008939 A KR 890008939A
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KR
South Korea
Prior art keywords
susceptor
thickness
sic film
sic
film
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KR1019880013517A
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Korean (ko)
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KR930004238B1 (en
Inventor
타카시 오오토
마사노리 니시무라
에이이치 토야
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히요시 쥰이치
도오시바 쎄라믹스 가부시끼 가이샤
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Publication of KR890008939A publication Critical patent/KR890008939A/en
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Publication of KR930004238B1 publication Critical patent/KR930004238B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Abstract

내용 없음No content

Description

세로형 기상(氣相) 성장 장치 및 방법Vertical vapor phase growth apparatus and method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

도면은, 본 발명에 의한 세로형 기상 성장 장치의 주요 부분을 나타낸 개략 종 다면도이다.The figure is a schematic longitudinal side view which shows the principal part of the vertical vapor phase growth apparatus by this invention.

Claims (11)

절연피막으로 피복된 반도체 기판의 표면상에 기상 성장법에 의하여 두꺼운 다결정 성장막을 퇴적하는 유전체 분리기판의 지지기판의 제조에 사용하는 세로형 기상 성장 장치에 있어서, 그의 표면상에 Sic피막이 형성되어 있는 탄소기재에 의해 서셉터(12)가 구성되고, 이 서셉터(12)는 반응로중에 수평으로 배치되어 반도체 기판(웨이퍼 또는 웨이퍼들)(5)을 지지하며, 이 서셉터(12)의 상부면 상의 Sic피막의 두께와, 이 서셉터(12)의 하부면 상의 Sic피막의 두께의 비율이 1 : 1.1 내지 1 : 1.5인 것을 특징으로 하는 세로형 기상 성장 장치.A vertical vapor phase growth apparatus for use in the production of a support substrate for a dielectric separator substrate in which a thick polycrystalline growth film is deposited by vapor phase growth on a surface of a semiconductor substrate coated with an insulating film, wherein a Sic film is formed on the surface thereof. The susceptor 12 is composed of a carbon substrate, and the susceptor 12 is horizontally disposed in the reactor to support the semiconductor substrate (wafer or wafers) 5, and the upper part of the susceptor 12. The thickness of the thickness of the Sic film on the surface and the thickness of the Sic film on the lower surface of the susceptor 12 is 1: 1.1 to 1: 1.5 characterized in that the vertical vapor growth apparatus. 제1항에 있어서, 상기한 탄소 기재가 4.4×10-6/℃±30%의 열팽창 계수와, 35MPa이상의 굽힘 강도 및 12%이하의 다공성을 갖는 특수 탄소 재료의 군중의 어느 하나인 것을 특징으로 하는 장치.The method of claim 1, wherein the carbon substrate is any one of a crowd of special carbon materials having a coefficient of thermal expansion of 4.4 x 10 -6 / ° C ± 30%, bending strength of 35 MPa or more and porosity of 12% or less. Device. 제1항에 있어서, 상기 Sic피막이 동일 결정계(Isometric Crystal System) 또는 입방 결정계(Cubic Crystal System)를 갖는 β-Sic인 것을 특징으로 하는 장치.The apparatus of claim 1, wherein the Sic coating is β-Sic having an Isometric Crystal System or a Cubic Crystal System. 제3항에 있어서, 상기 Sic피막이, 2,700℃의 분해 온도와, 3.21g/㎤의 밀도를 가지며, 유효 기공을 갖지 않는 것임을 특징으로 하는 장치.4. The apparatus according to claim 3, wherein the Sic film has a decomposition temperature of 2,700 DEG C, a density of 3.21 g / cm3, and no effective pores. 제4항에 있어서, 상기 Sic피막이 두께 방향으로는 200W/m°K, 측 방향으로 250W/m°K의 열전도 계수를 갖는 것임을 특징으로 하는 장치.5. The apparatus according to claim 4, wherein the Sic film has a thermal conductivity coefficient of 200 W / m ° K in the thickness direction and 250 W / m ° K in the lateral direction. a) 탄소 기재와; b)상기 탄소 기재의, 적어도 상부 및 하부면 상에 Sic피막이 퇴적되고, 상기한 상부 및 하부면의 기상 성장 장치내의 수평으로 배치되고, 상기한 상부면은 적어도 하나의 반도체 기판을 수취 하도록 위치되며, c) 상기한 상부면 상의 SiC피막의 두께와, 상기한 하부면 상의 Sic피막의 두께 비율이 1 : 1.1 내지 1 : 1.5 이내로서 구성된 기상 성장 장치용 서셈터.a) a carbon substrate; b) a Sic coating is deposited on at least the top and bottom surfaces of the carbon substrate, arranged horizontally in the vapor phase growth apparatus of the top and bottom surfaces, wherein the top surface is positioned to receive at least one semiconductor substrate. and c) The thickness ratio of the thickness of the SiC film on the upper surface and the thickness of the Sic film on the lower surface is within a range of 1: 1.1 to 1: 1.5. 제6항에 있어서, 상기한 탄소 기재가, 4.4×10-6/℃±30%의 열 팽창 계수와, 35MPa이상의 굽힘 강도 및 12%이하의 다공성을 갖는 특수 탄소 재료의 군중의 어느 하나인 것을 특징으로 하는 서셉터.7. The method according to claim 6, wherein the carbon base material is any one of a crowd of special carbon materials having a coefficient of thermal expansion of 4.4x10 -6 / ° C ± 30%, a bending strength of 35 MPa or more and porosity of 12% or less. Susceptor characterized by. 제6항에 있어서, 상기한 SiC피막이 동일 결정계(Isometric Crystal System)또는 입방 결정계(Cubic Crystal System)를 갖는 β-Sic인 것을 특징으로 하는 서셉터.The susceptor according to claim 6, wherein the SiC film is β-Sic having an isometric crystal system or a cubic crystal system. 제8항에 있어서, 상기 Sic피막이, 2,700℃의 분해 온도와, 3.21g/㎤의 밀도를 가지며, 유효 기공을 갖지 않는 것임을 특징으로 하는 서셉터.The susceptor according to claim 8, wherein the Sic film has a decomposition temperature of 2,700 ° C, a density of 3.21 g / cm 3, and no effective pores. 제6항에 있어서, 상기 Sic피막이 두께 방향으로는 200W/m°K, 축 방향으로는 250W/m°K의 열전도 계수를 갖는 것임을 특징으로 하는 서셉터.The susceptor according to claim 6, wherein the Sic film has a thermal conductivity coefficient of 200 W / m ° K in the thickness direction and 250 W / m ° K in the axial direction. 상기 서셉터(12)의 상부면 상에 제1의 두께를 갖는 Sic피막을 형성하고, 상기 서셉터(12)의 하부면 상에 제2의 두께를 갖는 Sic피막을 형성하며, 상기 제1 및 제2의 두께의 비율이 1 : 1.1 내지 1 : 1.5인 단계로 이루어지는, 반도체 기상 성장 장치에서 사용되는 서셉터(12)의 변형 감소 방법.Forming a Sic film having a first thickness on the upper surface of the susceptor 12, forming a Sic film having a second thickness on the lower surface of the susceptor 12, A method of reducing strain of the susceptor (12) for use in a semiconductor vapor phase growth apparatus, comprising a step in which the ratio of the second thickness is from 1: 1.1 to 1: 1.5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880013517A 1987-11-11 1988-10-17 Vertical type vapor phase growth apparatus and method thereof KR930004238B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP283054 1987-11-11
JP62283054A JP2566796B2 (en) 1987-11-11 1987-11-11 Vapor phase growth equipment
JP87-283054 1987-11-11

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Publication Number Publication Date
KR890008939A true KR890008939A (en) 1989-07-13
KR930004238B1 KR930004238B1 (en) 1993-05-22

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JP (1) JP2566796B2 (en)
KR (1) KR930004238B1 (en)
DE (1) DE3837584A1 (en)
FR (1) FR2622899B1 (en)
IT (1) IT1227859B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520914B1 (en) * 2001-07-30 2005-10-11 도시바세라믹스가부시키가이샤 Wafer processing member

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701767B2 (en) * 1995-01-27 1998-01-21 日本電気株式会社 Vapor phase growth equipment
DE19631168C1 (en) * 1996-08-01 1998-01-08 Siemens Ag Pre-coating substrate holder of graphite
DE19803423C2 (en) * 1998-01-29 2001-02-08 Siemens Ag Substrate holder for SiC epitaxy and method for producing an insert for a susceptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
KR102051668B1 (en) * 2016-12-20 2019-12-04 주식회사 티씨케이 A PART FOR SEMICONDUCTOR MANUFACTORING WITH SiC DEPOSITION LAYER AND MANUFACTORING METHOD THE SAME

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US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
JPS58125608A (en) * 1982-01-22 1983-07-26 Nec Corp Method for forming uniform sic film on surface of graphite plate and apparatus therefor
JP2671914B2 (en) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 Susceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520914B1 (en) * 2001-07-30 2005-10-11 도시바세라믹스가부시키가이샤 Wafer processing member

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DE3837584A1 (en) 1989-05-24
DE3837584C2 (en) 1993-01-28
FR2622899A1 (en) 1989-05-12
KR930004238B1 (en) 1993-05-22
IT1227859B (en) 1991-05-10
FR2622899B1 (en) 1992-01-03
JPH01125819A (en) 1989-05-18
IT8822503A0 (en) 1988-11-04
JP2566796B2 (en) 1996-12-25

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