FR2622899B1 - VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE - Google Patents
VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USEInfo
- Publication number
- FR2622899B1 FR2622899B1 FR888814668A FR8814668A FR2622899B1 FR 2622899 B1 FR2622899 B1 FR 2622899B1 FR 888814668 A FR888814668 A FR 888814668A FR 8814668 A FR8814668 A FR 8814668A FR 2622899 B1 FR2622899 B1 FR 2622899B1
- Authority
- FR
- France
- Prior art keywords
- crystallization apparatus
- vertical steam
- steam crystallization
- vertical
- steam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002425 crystallisation Methods 0.000 title 1
- 230000008025 crystallization Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62283054A JP2566796B2 (en) | 1987-11-11 | 1987-11-11 | Vapor phase growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2622899A1 FR2622899A1 (en) | 1989-05-12 |
FR2622899B1 true FR2622899B1 (en) | 1992-01-03 |
Family
ID=17660604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888814668A Expired - Fee Related FR2622899B1 (en) | 1987-11-11 | 1988-11-10 | VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2566796B2 (en) |
KR (1) | KR930004238B1 (en) |
DE (1) | DE3837584A1 (en) |
FR (1) | FR2622899B1 (en) |
IT (1) | IT1227859B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2701767B2 (en) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | Vapor phase growth equipment |
DE19631168C1 (en) * | 1996-08-01 | 1998-01-08 | Siemens Ag | Pre-coating substrate holder of graphite |
DE19803423C2 (en) * | 1998-01-29 | 2001-02-08 | Siemens Ag | Substrate holder for SiC epitaxy and method for producing an insert for a susceptor |
US6770144B2 (en) * | 2000-07-25 | 2004-08-03 | International Business Machines Corporation | Multideposition SACVD reactor |
JP4183945B2 (en) * | 2001-07-30 | 2008-11-19 | コバレントマテリアル株式会社 | Wafer heat treatment material |
KR102051668B1 (en) * | 2016-12-20 | 2019-12-04 | 주식회사 티씨케이 | A PART FOR SEMICONDUCTOR MANUFACTORING WITH SiC DEPOSITION LAYER AND MANUFACTORING METHOD THE SAME |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3424628A (en) * | 1966-01-24 | 1969-01-28 | Western Electric Co | Methods and apparatus for treating semi-conductive materials with gases |
US3399651A (en) * | 1967-05-26 | 1968-09-03 | Philco Ford Corp | Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon |
JPS58125608A (en) * | 1982-01-22 | 1983-07-26 | Nec Corp | Method for forming uniform sic film on surface of graphite plate and apparatus therefor |
JP2671914B2 (en) * | 1986-01-30 | 1997-11-05 | 東芝セラミックス 株式会社 | Susceptor |
-
1987
- 1987-11-11 JP JP62283054A patent/JP2566796B2/en not_active Expired - Fee Related
-
1988
- 1988-10-17 KR KR1019880013517A patent/KR930004238B1/en not_active IP Right Cessation
- 1988-11-04 IT IT8822503A patent/IT1227859B/en active
- 1988-11-05 DE DE3837584A patent/DE3837584A1/en active Granted
- 1988-11-10 FR FR888814668A patent/FR2622899B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2566796B2 (en) | 1996-12-25 |
KR930004238B1 (en) | 1993-05-22 |
DE3837584C2 (en) | 1993-01-28 |
KR890008939A (en) | 1989-07-13 |
DE3837584A1 (en) | 1989-05-24 |
FR2622899A1 (en) | 1989-05-12 |
IT8822503A0 (en) | 1988-11-04 |
IT1227859B (en) | 1991-05-10 |
JPH01125819A (en) | 1989-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |
Effective date: 20080930 |