FR2622899B1 - VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE - Google Patents

VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE

Info

Publication number
FR2622899B1
FR2622899B1 FR888814668A FR8814668A FR2622899B1 FR 2622899 B1 FR2622899 B1 FR 2622899B1 FR 888814668 A FR888814668 A FR 888814668A FR 8814668 A FR8814668 A FR 8814668A FR 2622899 B1 FR2622899 B1 FR 2622899B1
Authority
FR
France
Prior art keywords
crystallization apparatus
vertical steam
steam crystallization
vertical
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888814668A
Other languages
French (fr)
Other versions
FR2622899A1 (en
Inventor
Takashi Ohto
Masanori Nishimura
Eiichi Toya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of FR2622899A1 publication Critical patent/FR2622899A1/en
Application granted granted Critical
Publication of FR2622899B1 publication Critical patent/FR2622899B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08Preparation of the foundation plate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
FR888814668A 1987-11-11 1988-11-10 VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE Expired - Fee Related FR2622899B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62283054A JP2566796B2 (en) 1987-11-11 1987-11-11 Vapor phase growth equipment

Publications (2)

Publication Number Publication Date
FR2622899A1 FR2622899A1 (en) 1989-05-12
FR2622899B1 true FR2622899B1 (en) 1992-01-03

Family

ID=17660604

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888814668A Expired - Fee Related FR2622899B1 (en) 1987-11-11 1988-11-10 VERTICAL STEAM CRYSTALLIZATION APPARATUS, AND METHOD FOR ITS USE

Country Status (5)

Country Link
JP (1) JP2566796B2 (en)
KR (1) KR930004238B1 (en)
DE (1) DE3837584A1 (en)
FR (1) FR2622899B1 (en)
IT (1) IT1227859B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701767B2 (en) * 1995-01-27 1998-01-21 日本電気株式会社 Vapor phase growth equipment
DE19631168C1 (en) * 1996-08-01 1998-01-08 Siemens Ag Pre-coating substrate holder of graphite
DE19803423C2 (en) * 1998-01-29 2001-02-08 Siemens Ag Substrate holder for SiC epitaxy and method for producing an insert for a susceptor
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
JP4183945B2 (en) * 2001-07-30 2008-11-19 コバレントマテリアル株式会社 Wafer heat treatment material
KR102051668B1 (en) * 2016-12-20 2019-12-04 주식회사 티씨케이 A PART FOR SEMICONDUCTOR MANUFACTORING WITH SiC DEPOSITION LAYER AND MANUFACTORING METHOD THE SAME

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
JPS58125608A (en) * 1982-01-22 1983-07-26 Nec Corp Method for forming uniform sic film on surface of graphite plate and apparatus therefor
JP2671914B2 (en) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 Susceptor

Also Published As

Publication number Publication date
JP2566796B2 (en) 1996-12-25
KR930004238B1 (en) 1993-05-22
DE3837584C2 (en) 1993-01-28
KR890008939A (en) 1989-07-13
DE3837584A1 (en) 1989-05-24
FR2622899A1 (en) 1989-05-12
IT8822503A0 (en) 1988-11-04
IT1227859B (en) 1991-05-10
JPH01125819A (en) 1989-05-18

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20080930