KR890007393A - 웨이퍼의 칩 절단방법 - Google Patents

웨이퍼의 칩 절단방법 Download PDF

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Publication number
KR890007393A
KR890007393A KR870011508A KR870011508A KR890007393A KR 890007393 A KR890007393 A KR 890007393A KR 870011508 A KR870011508 A KR 870011508A KR 870011508 A KR870011508 A KR 870011508A KR 890007393 A KR890007393 A KR 890007393A
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KR
South Korea
Prior art keywords
water
chip cutting
wafer
purity
cutting method
Prior art date
Application number
KR870011508A
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English (en)
Other versions
KR910009418B1 (ko
Inventor
조성환
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019870011508A priority Critical patent/KR910009418B1/ko
Publication of KR890007393A publication Critical patent/KR890007393A/ko
Application granted granted Critical
Publication of KR910009418B1 publication Critical patent/KR910009418B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음

Description

웨이퍼 칩 철단방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 웨이퍼 칩 절단공정에 있어서, D.I 워터의 압력 및 커팅 스피드를 일정하게 하고 고순도의 D.I워터에 수용성 가스를 투입하여 만든 저순도의 D.I 워터를 이용하여 칩 절단시 정전기의 발생을 방지시킴을 특징으로 하는 웨이퍼의 칩 절단방법.
  2. 제1항에 있어서, D.I 워터의 압력 및 커팅 스피드를 각각 1㎏/㎠ 및 100mm/sec로하고 고순도의 D.I워터에 수용성 가스를 투입하되 D.I워터 순도가 80KQ 이하고 되게함을 특징으로 하는 웨이퍼의 칩 절단방법.
  3. 제2항에 있어서, 수용성 가스로서 CO2가스를 투입하되 D.I 워터가 순도가 60±20KQ으로 되게함을 특징으로 하는 웨이퍼의 칩 절단방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870011508A 1987-10-16 1987-10-16 반도체 웨이퍼의 칩 절단방법 KR910009418B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019870011508A KR910009418B1 (ko) 1987-10-16 1987-10-16 반도체 웨이퍼의 칩 절단방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870011508A KR910009418B1 (ko) 1987-10-16 1987-10-16 반도체 웨이퍼의 칩 절단방법

Publications (2)

Publication Number Publication Date
KR890007393A true KR890007393A (ko) 1989-06-19
KR910009418B1 KR910009418B1 (ko) 1991-11-15

Family

ID=19265227

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870011508A KR910009418B1 (ko) 1987-10-16 1987-10-16 반도체 웨이퍼의 칩 절단방법

Country Status (1)

Country Link
KR (1) KR910009418B1 (ko)

Also Published As

Publication number Publication date
KR910009418B1 (ko) 1991-11-15

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