KR880010689U - Cmos집적회로에서의 대전류 출력회로 - Google Patents

Cmos집적회로에서의 대전류 출력회로

Info

Publication number
KR880010689U
KR880010689U KR2019860018821U KR860018821U KR880010689U KR 880010689 U KR880010689 U KR 880010689U KR 2019860018821 U KR2019860018821 U KR 2019860018821U KR 860018821 U KR860018821 U KR 860018821U KR 880010689 U KR880010689 U KR 880010689U
Authority
KR
South Korea
Prior art keywords
current output
high current
cmos integrated
integrated circuit
circuit
Prior art date
Application number
KR2019860018821U
Other languages
English (en)
Other versions
KR890005033Y1 (ko
Inventor
안현승
박준성
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR2019860018821U priority Critical patent/KR890005033Y1/ko
Publication of KR880010689U publication Critical patent/KR880010689U/ko
Application granted granted Critical
Publication of KR890005033Y1 publication Critical patent/KR890005033Y1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Amplifiers (AREA)
KR2019860018821U 1986-11-28 1986-11-28 Cmos집적회로에서의 대전류 출력회로 KR890005033Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019860018821U KR890005033Y1 (ko) 1986-11-28 1986-11-28 Cmos집적회로에서의 대전류 출력회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019860018821U KR890005033Y1 (ko) 1986-11-28 1986-11-28 Cmos집적회로에서의 대전류 출력회로

Publications (2)

Publication Number Publication Date
KR880010689U true KR880010689U (ko) 1988-07-28
KR890005033Y1 KR890005033Y1 (ko) 1989-07-29

Family

ID=19257476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019860018821U KR890005033Y1 (ko) 1986-11-28 1986-11-28 Cmos집적회로에서의 대전류 출력회로

Country Status (1)

Country Link
KR (1) KR890005033Y1 (ko)

Also Published As

Publication number Publication date
KR890005033Y1 (ko) 1989-07-29

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Legal Events

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