KR880010689U - Cmos집적회로에서의 대전류 출력회로 - Google Patents
Cmos집적회로에서의 대전류 출력회로Info
- Publication number
- KR880010689U KR880010689U KR2019860018821U KR860018821U KR880010689U KR 880010689 U KR880010689 U KR 880010689U KR 2019860018821 U KR2019860018821 U KR 2019860018821U KR 860018821 U KR860018821 U KR 860018821U KR 880010689 U KR880010689 U KR 880010689U
- Authority
- KR
- South Korea
- Prior art keywords
- current output
- high current
- cmos integrated
- integrated circuit
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019860018821U KR890005033Y1 (ko) | 1986-11-28 | 1986-11-28 | Cmos집적회로에서의 대전류 출력회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019860018821U KR890005033Y1 (ko) | 1986-11-28 | 1986-11-28 | Cmos집적회로에서의 대전류 출력회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880010689U true KR880010689U (ko) | 1988-07-28 |
KR890005033Y1 KR890005033Y1 (ko) | 1989-07-29 |
Family
ID=19257476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019860018821U KR890005033Y1 (ko) | 1986-11-28 | 1986-11-28 | Cmos집적회로에서의 대전류 출력회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR890005033Y1 (ko) |
-
1986
- 1986-11-28 KR KR2019860018821U patent/KR890005033Y1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR890005033Y1 (ko) | 1989-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20010607 Year of fee payment: 13 |
|
EXPY | Expiration of term |