KR880003020A - Silicon Purification Method and Apparatus - Google Patents

Silicon Purification Method and Apparatus Download PDF

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Publication number
KR880003020A
KR880003020A KR870008664A KR870008664A KR880003020A KR 880003020 A KR880003020 A KR 880003020A KR 870008664 A KR870008664 A KR 870008664A KR 870008664 A KR870008664 A KR 870008664A KR 880003020 A KR880003020 A KR 880003020A
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South Korea
Prior art keywords
silicon
crucible
cooling body
molten
melting furnace
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Application number
KR870008664A
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Korean (ko)
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KR900007075B1 (en
Inventor
히데오 신구우
료오다쓰 오오쓰가
시게미 다니모또
카즈오 토요다
Original Assignee
이시이 치까시
쇼와알루미늄 가부시기 가이샤
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Priority claimed from JP61186646A external-priority patent/JPH0753569B2/en
Priority claimed from JP62050199A external-priority patent/JP2592826B2/en
Application filed by 이시이 치까시, 쇼와알루미늄 가부시기 가이샤 filed Critical 이시이 치까시
Publication of KR880003020A publication Critical patent/KR880003020A/en
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Publication of KR900007075B1 publication Critical patent/KR900007075B1/en

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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/20Recycling

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

내용 없음No content

Description

규소의 정제방법 및 장치Silicon Purification Method and Apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 방법의 실시에 사용하는 장치의 제1의 구체적 예를 도시하는 수직단면도,1 is a vertical sectional view showing a first specific example of the apparatus used in the practice of the method of the present invention,

제2도는 본 발명의 방법의 실시에 사용하는 장치의 제2의 구체적 예를 도시하는 수직단면도,2 is a vertical sectional view showing a second specific example of the apparatus used in the practice of the method of the present invention,

제3도는 본 발명의 방법의 실시예에 사용하는 장치의 제3의 구체적 예를 도시하는 수직단면도.3 is a vertical sectional view showing a third specific example of the apparatus used in the embodiment of the method of the present invention.

Claims (10)

정제할 조제규소를 용해하고, 이 용융조제 규소를 불활성가스 분위기 중에서 응고온도를 초과한 상태로 유지하고 또한 용융조제 규소중에 중공회전 냉각체를 침지하는 동시에, 이 중공회전 냉각체의 내부에 냉각유체를 보내면서 회전냉각체를 회전시켜서 그 표면에 고순도 규소를 정출시키는 것으로 구성된 규소의 정체방법.The crude silicon to be purified is dissolved, and the molten crude silicon is kept in a state exceeding the solidification temperature in an inert gas atmosphere, and the hollow rotary cooling body is immersed in the molten auxiliary silicon, and the cooling fluid is inside the hollow rotary cooling body. A method of stagnation of silicon consisting of rotating the rotary cooling body while sending a high purity silicon on its surface. 제1항에 있어서, 회전시의 냉각체의 주속이 500-600mm/초인 것을 특징으로 하는 규소의 정제방법.The method for purifying silicon according to claim 1, wherein the circumferential speed of the cooling body at the time of rotation is 500-600 mm / sec. 제1항에 있어서, 회전시의 냉각체의 주속이 500-1500mm/초인 것을 특징으로 하는 규소의 정제방법.The method for purifying silicon according to claim 1, wherein the circumferential speed of the cooling body during rotation is 500-1500 mm / sec. 제1항에 있어서, 불활성가스가 아르곤 가스인 것을 특징으로 하는 규소의 정제방법.The method of purifying silicon according to claim 1, wherein the inert gas is argon gas. 발열체를 구비한 용해로와 ; 용해로 내에 도가니를 배치하고, 도가니 내에 장입된 용융규소를 불활성 가스 분위기하에 놓는 장치와, 도가니 내에 배치된 회전이 가능한 중공회전 냉각체와, 중공회전 냉각체 내에 냉각유체를 공급하는 장치로 구성되는 것을 특징으로 하는 조제규소를 정제하여 고순도 규소를 얻기 위한 규소의 정제장치.A melting furnace having a heating element; The apparatus includes a device in which a crucible is placed in a melting furnace and a molten silicon charged in the crucible is placed under an inert gas atmosphere, a hollow rotating cooling body disposed in the crucible, and a device supplying a cooling fluid in the hollow rotating cooling body. A refiner of silicon for purifying crude silicon characterized by obtaining high purity silicon. 상단이 개구된 용해로 본체와, 본체의 상단개구를 막는 뚜껑으로 구성되고, 내부에 발열체를 구비한 용해로와, 상단이 개구되고, 또 용해로 내에 배치되는 도가니와, 상기 뚜껑을 관통해서 뚜껑에 장치되어 용해로 내로 불활성가스를 공급하는 불활성가스 공급관과, 뚜껑을 관통하여 도가니 내에 배치된 회전이 가능한 중공회전냉각체와, 중공회전 냉각체 내에 배치되고, 중공회전 냉각체내에 냉각유체를 공급하는 냉각유체 공급관으로 구성되는 것을 특징으로 하는 조제규소를 정제하여 고순도 규소를 얻기 위한 규소의 정제장치.A melting furnace body having an upper end opening, a lid blocking an upper opening of the main body, a melting furnace having a heating element therein; a crucible having an upper end opening and disposed in the melting furnace; An inert gas supply pipe for supplying an inert gas into the melting furnace, a hollow rotary coolant that is rotatable through the lid and disposed in the crucible, and a cooling fluid supply pipe that is disposed in the hollow rotary coolant and supplies cooling fluid to the hollow rotary coolant Refining device of silicon for purifying crude silicon, characterized in that consisting of high purity silicon. 제6항에 있어서, 뚜껑에 최소한 1개의 용융규소 유속저하용 방해판이 조지(持 : 매달아 지지함) 부재를 개재하여 매단 상태로 설치되고, 그 방해판의 상단이 도가니에 든 용융규소의 액면보다 하방에 있고, 하단이 냉각체의 하단보다 약간 하방에 있는 것을 특징으로 하는 규소의 정제장치.7. The lid of claim 6, wherein at least one molten silicon flux reducing baffle is provided on the lid. 持: suspended support) silicon, which is installed in a suspended state via a member, the upper end of which is below the liquid level of the molten silicon in the crucible, and the lower end is slightly lower than the lower end of the cooling body. Refiner. 제6항에 있어서, 도가니의 내면에 최소한 1개의 용융규소 유속저하용 방해판이 설치되고, 이 방해판의 상단이 도가니에 든 용융규소의 액면보다 하방에 있고, 하단이 냉각체의 하단보다도 하방에 있는 것을 특징으로 하는 규소의 정제장치.7. A molten silicon flow rate lowering baffle plate is provided on the inner surface of the crucible, the upper end of which is below the liquid level of the molten silicon contained in the crucible, and the lower end is lower than the lower end of the cooling body. Purifier of silicon characterized in that. 제5항 또는 제6항에 있어서, 도가니가 흑연 또는 알루미나제이고 그 내면에 2산화규소층이 존재하는 것을 특징으로 하는 규소의 정제장치The silicon purifier according to claim 5 or 6, wherein the crucible is made of graphite or alumina, and a silicon dioxide layer is present on an inner surface thereof. 제5항 또는 제6항에 있어서, 중공회전 냉각체가 질화규소 또는 흑연으로 구성되는 것을 특징으로 하는 규소의 정제장치.7. The silicon purifier according to claim 5 or 6, wherein the hollow rotary cooling body is made of silicon nitride or graphite. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870008664A 1986-08-07 1987-08-07 Color display tube process and apparatus for purifying silicon KR900007075B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP186646 1986-08-07
JP61186646A JPH0753569B2 (en) 1986-08-07 1986-08-07 Silicon purification method
JP62050199A JP2592826B2 (en) 1987-03-06 1987-03-06 Color picture tube

Publications (2)

Publication Number Publication Date
KR880003020A true KR880003020A (en) 1988-05-13
KR900007075B1 KR900007075B1 (en) 1990-09-28

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KR1019870008664A KR900007075B1 (en) 1986-08-07 1987-08-07 Color display tube process and apparatus for purifying silicon

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497284B1 (en) * 2002-11-01 2005-06-28 주식회사 한국하이시스 High purity inhibitor's manufacture system
KR101217735B1 (en) * 2011-10-17 2013-01-02 한국해양대학교 산학협력단 Apparatus for formation of solid matter from oil

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101398128B1 (en) * 2012-11-06 2014-05-27 현빈테크 주식회사 The structure of Sapphire grower

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497284B1 (en) * 2002-11-01 2005-06-28 주식회사 한국하이시스 High purity inhibitor's manufacture system
KR101217735B1 (en) * 2011-10-17 2013-01-02 한국해양대학교 산학협력단 Apparatus for formation of solid matter from oil

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KR900007075B1 (en) 1990-09-28

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