KR870010881U - 정 전압 제어 회로 - Google Patents
정 전압 제어 회로Info
- Publication number
- KR870010881U KR870010881U KR2019850018199U KR850018199U KR870010881U KR 870010881 U KR870010881 U KR 870010881U KR 2019850018199 U KR2019850018199 U KR 2019850018199U KR 850018199 U KR850018199 U KR 850018199U KR 870010881 U KR870010881 U KR 870010881U
- Authority
- KR
- South Korea
- Prior art keywords
- control circuit
- constant voltage
- voltage control
- constant
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/227—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019850018199U KR880003415Y1 (ko) | 1985-12-30 | 1985-12-30 | 정 전압 제어 회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019850018199U KR880003415Y1 (ko) | 1985-12-30 | 1985-12-30 | 정 전압 제어 회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870010881U true KR870010881U (ko) | 1987-07-13 |
KR880003415Y1 KR880003415Y1 (ko) | 1988-09-29 |
Family
ID=19247753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019850018199U KR880003415Y1 (ko) | 1985-12-30 | 1985-12-30 | 정 전압 제어 회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR880003415Y1 (ko) |
-
1985
- 1985-12-30 KR KR2019850018199U patent/KR880003415Y1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR880003415Y1 (ko) | 1988-09-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 19970829 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |