KR870010621A - Ii-vi족 반도체 물질의 금속 유기물 증기상 에피택셜 성장법 및 에피택셜 복합체 - Google Patents

Ii-vi족 반도체 물질의 금속 유기물 증기상 에피택셜 성장법 및 에피택셜 복합체 Download PDF

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KR870010621A
KR870010621A KR870003153A KR870003153A KR870010621A KR 870010621 A KR870010621 A KR 870010621A KR 870003153 A KR870003153 A KR 870003153A KR 870003153 A KR870003153 A KR 870003153A KR 870010621 A KR870010621 A KR 870010621A
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group
substrate
epitaxial
epitaxial layer
compound
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KR870003153A
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밸런타인 쥬니어 도널드
윌리암 브라운 던컨
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죤 제이 헤이간
아메리칸 사이아나밋드 캄파니
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Publication of KR870010621A publication Critical patent/KR870010621A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

Ⅱ-Ⅵ족 반도체 물질의 금속 유기물 증기상 에피택셜 성장법 및 에피택셜 복합체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. (ⅰ) 선결정된 온도까지 가열된 감수기상에 결정성기질을 배치하고;
    (ⅱ) 적어도 하나의 기화된 Ⅱ족 성분의 흐름을 상기 기질을 향해 배향하고;
    (ⅲ) 기화된 Ⅵ족 금속-유기물의 흐름을 상기 기질을 향해 배양하고;
    (ⅳ) Ⅱ족 성분과 Ⅵ족 금속유기물의 배향된 흐름을 반응시켜 에피텍셜층을 형성하는 것으로 구성되며, 개선점은 하기식의 텔루륨화합물을 상기 Ⅵ족 금속유기물로서 사용하는 것으로 구성되는, 결정성 기질이나 하나 또는 그 이상의 에픽택셜층을 그 위에 갖는 결정성 기질 위에 Ⅱ-Ⅵ족 에피택셜층을 반응기내에서 성장시키는 방법.
    상기에서 R¹과 R²는 독립적으로 수소 또는 1-약 4탄소원자의 알킬임.
  2. 제1항에 있어서,
    상기 텔루륨화합물이 2,5-디히드로텔루로펜으로 구성되는 방법.
  3. 제1항에 있어서,
    상기Ⅱ족 성분이 디알킬카드뮴화합물, 디알킬수은 화합물, 수은, 또는 이러한 성분들의 혼합물로 구성되며, 상기 알킬기는 1-약 4 탄소원자를 갖는 방법.
  4. 제1항에 있어서,
    Ⅱ족 성분에 대한 Ⅵ족 금속유기물의 물분율비가 약 1 대 1-약 7 대 1 인 방법.
  5. 제1항에 있어서,
    감수기가 약 220°- 약 300°C 범위의 온도까지 가열되는 방법.
  6. 제1항에 있어서,
    상기 배향된 흐름중 적어도 하나가 운반기체의 흐름을 더 포함하는 방법.
  7. 제1항에 있어서,
    기질이 카드뮴텔루륨화합물로 구성되는 방법.
  8. 제1항의 방법으로 제조된, 결정성기질 위 Ⅱ-Ⅵ족 에피탤셜층으로 구성되는 피에탤셜복합체.
  9. 제5항의 방법으로 제조된, 결정성기질 위 Ⅱ-Ⅵ족 에피택셜층으로 구성되는 에피택셜복합체.
  10. 제9항에 있어서,
    에피탤셜층이 (ⅰ)수은텔루륨화물, (ⅱ)카드뮴텔루륨화물 및 (ⅲ) 수은카드뮴텔루륨화물의 불규칙한층인 에피택셜 복합체.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR870003153A 1986-04-02 1987-04-01 Ii-vi족 반도체 물질의 금속 유기물 증기상 에피택셜 성장법 및 에피택셜 복합체 KR870010621A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US847370 1986-04-02
US06/847,370 US4920068A (en) 1986-04-02 1986-04-02 Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Publications (1)

Publication Number Publication Date
KR870010621A true KR870010621A (ko) 1987-11-30

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KR870003153A KR870010621A (ko) 1986-04-02 1987-04-01 Ii-vi족 반도체 물질의 금속 유기물 증기상 에피택셜 성장법 및 에피택셜 복합체

Country Status (14)

Country Link
US (1) US4920068A (ko)
EP (1) EP0240844B1 (ko)
JP (1) JPH07118457B2 (ko)
KR (1) KR870010621A (ko)
AT (1) ATE67530T1 (ko)
CA (1) CA1287555C (ko)
DE (1) DE3773031D1 (ko)
ES (1) ES2025080B3 (ko)
GR (1) GR3002742T3 (ko)
HK (1) HK36392A (ko)
IE (1) IE59894B1 (ko)
IL (1) IL82033A0 (ko)
MX (1) MX166921B (ko)
SG (1) SG21992G (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4828938A (en) * 1986-04-11 1989-05-09 Hughes Aircraft Company Method for depositing materials containing tellurium and product
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US5194983A (en) * 1986-11-27 1993-03-16 Centre National De La Recherche Scientifique (C.N.R.S.) Superlattice optical monitor
US5312983A (en) * 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
US5382542A (en) * 1993-07-26 1995-01-17 Hughes Aircraft Company Method of growth of II-VI materials on silicon using As passivation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3218203A (en) * 1961-10-09 1965-11-16 Monsanto Co Altering proportions in vapor deposition process to form a mixed crystal graded energy gap
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
GB2078695B (en) * 1980-05-27 1984-06-20 Secr Defence Cadmium mercury telluride deposition
EP0040939B1 (en) * 1980-05-27 1985-01-02 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Manufacture of cadmium mercury telluride
US4439267A (en) * 1982-09-29 1984-03-27 The United States Of America As Represented By The Secretary Of The Army Vapor-phase method for growing mercury cadmium telluride
EP0106537B1 (en) * 1982-10-19 1989-01-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Organometallic chemical vapour deposition of films
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Also Published As

Publication number Publication date
JPH07118457B2 (ja) 1995-12-18
IE870840L (en) 1987-10-02
ES2025080B3 (es) 1992-03-16
EP0240844A1 (en) 1987-10-14
MX166921B (es) 1993-02-15
CA1287555C (en) 1991-08-13
ATE67530T1 (de) 1991-10-15
HK36392A (en) 1992-05-29
DE3773031D1 (de) 1991-10-24
US4920068A (en) 1990-04-24
GR3002742T3 (en) 1993-01-25
SG21992G (en) 1992-04-16
IL82033A0 (en) 1987-10-20
IE59894B1 (en) 1994-04-20
EP0240844B1 (en) 1991-09-18
JPS62282438A (ja) 1987-12-08

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