KR870008706A - Thermal print head - Google Patents

Thermal print head Download PDF

Info

Publication number
KR870008706A
KR870008706A KR870001956A KR870001956A KR870008706A KR 870008706 A KR870008706 A KR 870008706A KR 870001956 A KR870001956 A KR 870001956A KR 870001956 A KR870001956 A KR 870001956A KR 870008706 A KR870008706 A KR 870008706A
Authority
KR
South Korea
Prior art keywords
layer
polycrystalline silicon
thin
transistor
ultra
Prior art date
Application number
KR870001956A
Other languages
Korean (ko)
Inventor
마사노리 야기노
히사오 하야시
Original Assignee
오오가 노리오
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61047458A external-priority patent/JPH0737146B2/en
Priority claimed from JP9253886A external-priority patent/JPS62248663A/en
Application filed by 오오가 노리오, 소니 가부시끼 가이샤 filed Critical 오오가 노리오
Publication of KR870008706A publication Critical patent/KR870008706A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33505—Constructional details
    • B41J2/33515—Heater layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33545—Structure of thermal heads characterised by dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/3355—Structure of thermal heads characterised by materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/335—Structure of thermal heads
    • B41J2/33555—Structure of thermal heads characterised by type
    • B41J2/3357—Surface type resistors

Abstract

내용 없음No content

Description

열 프린트 헤드Thermal print head

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명에 따라, 제 1 실시예 내의 초박막 다결정 실리콘 트랜지스터를 포함하는 열 프린트 헤드의 확대된 단면도. 제 2 도는 본 발명에 따라, 제 2 실시예 내의 초박막 다결정 실리콘 트랜지스터를 포함하는 열 프린트 헤드의 확대된 단면도. 제 3 도는 본 발명에 따라, 제 3 실시예 내의 초박막 다결정 실리콘 트랜지스터를 포함하는 열 프린트 헤드의 확대된 단면도.1 is an enlarged cross-sectional view of a thermal print head including the ultra-thin polycrystalline silicon transistor in the first embodiment, according to the present invention. 2 is an enlarged cross-sectional view of a thermal print head including the ultra-thin polycrystalline silicon transistor in the second embodiment, according to the present invention. 3 is an enlarged cross-sectional view of a thermal print head including the ultra-thin polycrystalline silicon transistor in the third embodiment, according to the present invention.

Claims (9)

초박막 다결정 실리콘 트랜지스터를 포함하는 열 프린트 헤드에 있어서,A thermal print head comprising an ultra thin polycrystalline silicon transistor, 기판상에 형성된 얇은 다결정 실리콘 층내에 형성된 가열 저항체와,A heating resistor formed in the thin polycrystalline silicon layer formed on the substrate, 상기 다결정 실리콘 층내에 형성된 얇은 활성층을 갖는 각각의 초박막 트랜지스터를 포함하는 구동회로를 포함하는 것을 특징으로 하는 열 프린트 헤드.And a drive circuit including each ultra thin transistor having a thin active layer formed in said polycrystalline silicon layer. 제 1 항에 있어서,The method of claim 1, 상기 초박막 다결정 실리콘 트랜지스터의 각 활성층을 형성하는 다결정 실리콘 층의 두께가 20 내지 800Å의 범위내에 있는 것을 특징으로 하는 열 프린트 헤드.And the thickness of the polycrystalline silicon layer forming each active layer of the ultra-thin polycrystalline silicon transistor is in the range of 20 to 800 GPa. 제 1 항에 있어서,The method of claim 1, 상기 가열 저항체를 형성하는 물질이 상기 초박막 다결정 실리콘 트랜지스터의 각 활성층을 형성하는 물질과 같은 것을 특징으로 하는 열 프린트 헤드.And the material forming the heating resistor is the same as the material forming each active layer of the ultra-thin polycrystalline silicon transistor. 제 1 항에 있어서,The method of claim 1, 상기 초박막 다결정 실리콘 트랜지스터의 각 게이트 전국 및 상기 가열 저항체가 동일한 물질로 형성되는 것을 특징으로 하는 열 프린트 헤드.And the heating resistor of each gate nation of the ultra-thin polycrystalline silicon transistor is formed of the same material. 초박막 다결정 트랜지스터를 포함하는열 프린트 헤드에 있어서,A thermal print head comprising an ultra thin polycrystalline transistor, 절연 실리콘 기판과,With an insulated silicon substrate, 적어도 절연 실리콘 기판 표면의 한 부분상에 형성된 열 저항층과,A heat resistant layer formed on at least a portion of the insulated silicon substrate surface, 열 저항층의 부분상에 형성된 얇은 다결정 실리콘과, 얇은 다결정 실리콘 층내에 형성된 가열저항체와,Thin polycrystalline silicon formed on a portion of the heat resistant layer, a heating resistor formed in the thin polycrystalline silicon layer, 열 저항층의 부분상에 형성된 얇은 활성층을 갖는 각각의 박막 트랜지스터를 포함하는 구동회로를 포함하는 것을 특징으로 하는 열 프린트 헤드.And a drive circuit including each thin film transistor having a thin active layer formed on a portion of the thermal resistance layer. 제 5 항에 있어서,The method of claim 5, 상기 박막 트랜지스터의 각 활성층을 형성하는 다결정 실리콘 층의 두께가 20 내지 800Å의 범위에 있는 것을 특징으로 하는 열 프린트 헤드.And the thickness of the polycrystalline silicon layer forming each active layer of the thin film transistor is in the range of 20 to 800 kPa. 제 5 항에 있어서,The method of claim 5, 볼록한 제 2 열 저항층이 각 상기 가열 저항체 및 상기 절연 실리콘 기판사이에 형성되는 것을 특징으로 하는 열 프린트 헤드.And a convex second heat resistant layer is formed between each of said heating resistor and said insulating silicon substrate. 제 1항 내지 7항중 어느 한 항에 있어서, 산화 방지층이 각각의 상기 활성층을 카바하는 것을 특징으로 하는 열 프린트 헤드.8. The thermal print head according to any one of claims 1 to 7, wherein an antioxidant layer covers each of the active layers. 제 8 항에 있어서,The method of claim 8, 마멸 저항 물질층이 상기 저항체 및 상기 구동회로 지역상에 인가되는 것을 특징으로 하는 열 프린트 헤드.And a wear resistant material layer is applied on the resistor and the drive circuit area. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR870001956A 1986-03-06 1987-03-05 Thermal print head KR870008706A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP47458 1986-03-06
JP61047458A JPH0737146B2 (en) 1986-03-06 1986-03-06 Thin film thermal head
JP9253886A JPS62248663A (en) 1986-04-22 1986-04-22 Thin-film thermal head
JP92538 1986-06-19

Publications (1)

Publication Number Publication Date
KR870008706A true KR870008706A (en) 1987-10-20

Family

ID=26387631

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870001956A KR870008706A (en) 1986-03-06 1987-03-05 Thermal print head

Country Status (4)

Country Link
EP (1) EP0235827B1 (en)
KR (1) KR870008706A (en)
CA (1) CA1283693C (en)
DE (1) DE3786935T2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055859A (en) * 1988-11-16 1991-10-08 Casio Computer Co., Ltd. Integrated thermal printhead and driving circuit
EP0378439B1 (en) * 1989-01-13 1995-01-04 Canon Kabushiki Kaisha Recording head
US5227810A (en) * 1989-05-16 1993-07-13 Casio Computer Co., Ltd. Image reader/recorder device for reading out and recording images on a recording material
JP2518186B2 (en) * 1990-05-30 1996-07-24 カシオ計算機株式会社 Thermal print head
JP3016884B2 (en) * 1991-02-06 2000-03-06 ローム株式会社 Thermal head
US6504226B1 (en) * 2001-12-20 2003-01-07 Stmicroelectronics, Inc. Thin-film transistor used as heating element for microreaction chamber
JP2004050650A (en) * 2002-07-19 2004-02-19 Nec Corp Semiconductor device, image output device, and driving method for functional element
CN110139761B (en) 2017-03-15 2021-08-24 惠普发展公司，有限责任合伙企业 Thermally contacting die

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852563A (en) * 1974-02-01 1974-12-03 Hewlett Packard Co Thermal printing head
JPS57203573A (en) * 1981-06-10 1982-12-13 Fuji Xerox Co Ltd Thermal head
JPS58153672A (en) * 1982-03-10 1983-09-12 Nippon Telegr & Teleph Corp <Ntt> Recording head with built-in thin film transistor circuit
US4472875A (en) * 1983-06-27 1984-09-25 Teletype Corporation Method for manufacturing an integrated circuit device
CA1228935A (en) * 1983-12-23 1987-11-03 Sony Corp Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
CA1218470A (en) * 1983-12-24 1987-02-24 Hisayoshi Yamoto Semiconductor device with polycrystalline silicon active region and ic including semiconductor device

Also Published As

Publication number Publication date
DE3786935D1 (en) 1993-09-16
EP0235827A2 (en) 1987-09-09
DE3786935T2 (en) 1994-01-20
EP0235827A3 (en) 1989-12-27
CA1283693C (en) 1991-04-30
EP0235827B1 (en) 1993-08-11

Similar Documents

Publication Publication Date Title
KR900008698A (en) Semiconductor device and semiconductor memory device
KR920015558A (en) Semiconductor integrated circuit device
KR960015929A (en) Semiconductor device and manufacturing process
KR860003661A (en) Manufacturing method of semiconductor integrated circuit and apparatus manufactured using the same
KR960002892A (en) Silicon Carbide Semiconductor Device and Manufacturing Method Thereof
KR890015355A (en) Manufacturing Method of Semiconductor Device
KR870008706A (en) Thermal print head
KR890002907A (en) Superconducting Thin Layers
KR860000964A (en) Thermal head
KR870004504A (en) Semiconductor device and manufacturing method thereof
KR900005593A (en) Semiconductor device
KR970060388A (en) Semiconductor device and manufacturing method of semiconductor device
KR920001749A (en) Semiconductor device with improved insulated gate transistor
KR920018985A (en) An integrated circuit having a charge coupled device and a method of manufacturing the same.
KR900002321A (en) Semiconductor device with high resistance layer
KR930009127A (en) MOS transistor device and its manufacturing method
KR900005561A (en) Semiconductor device
KR880002263A (en) Manufacturing Method of Semiconductor Device
KR920013677A (en) Thin film transistor and its manufacturing method
KR910003802A (en) Semiconductor device and manufacturing method
KR930003261A (en) Semiconductor integrated circuit
KR910016103A (en) Semiconductor device
JPS5629344A (en) Semiconductor integrated circuit device and manufacture thereof
KR850700185A (en) Semiconductor integrated circuit
JPS551179A (en) Complementary mis integrated circuit apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application