KR870005428A - Cold cathode - Google Patents

Cold cathode Download PDF

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Publication number
KR870005428A
KR870005428A KR1019850008299A KR850008299A KR870005428A KR 870005428 A KR870005428 A KR 870005428A KR 1019850008299 A KR1019850008299 A KR 1019850008299A KR 850008299 A KR850008299 A KR 850008299A KR 870005428 A KR870005428 A KR 870005428A
Authority
KR
South Korea
Prior art keywords
cold cathode
sio
thousands
substrate
layer
Prior art date
Application number
KR1019850008299A
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Korean (ko)
Other versions
KR920010362B1 (en
Inventor
소회섭
Original Assignee
허신구
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019850008299A priority Critical patent/KR920010362B1/en
Publication of KR870005428A publication Critical patent/KR870005428A/en
Application granted granted Critical
Publication of KR920010362B1 publication Critical patent/KR920010362B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode

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  • Cold Cathode And The Manufacture (AREA)

Abstract

내용 없음No content

Description

냉음극Cold cathode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도의 (가)-(라)는 본 발명의 냉음극의 제조 과정을 보인 설명도.(A)-(d) of FIG. 1 is explanatory drawing which showed the manufacturing process of the cold cathode of this invention.

제2도의 (가)(나)는 본 발명의 냉음극의 에너지 밴드 구조를 보인 것으로, (가)는 전원이 인가되기 전의 상태를 보인 설명도.(A) and (b) of FIG. 2 show the energy band structure of the cold cathode of the present invention.

(나)는 전원이 인가되었을 경우의 상태를 보인 설명도.(B) is explanatory drawing which shows the state when power is applied.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

1 : n형 실리콘 기판1: n-type silicon substrate

3 : SiO2층3: SiO 2 layer

4,5 : 전극4,5: electrode

Claims (1)

n형 실리콘기판(1)상에 수백-수천 Å의 SiO2층(3)을 형성하고, 그 SiO2층(3)과 기판(1)의 저면에 금속을 스퍼터링하여 전극(4)(5)을 형성함을 특징으로 하는 냉음극.On the n-type silicon substrate (1), hundreds of thousands of thousands of SiO 2 layers (3) are formed, and metals are sputtered on the SiO 2 layer (3) and the bottom of the substrate (1) (5). Cold cathode, characterized in that to form. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850008299A 1985-11-07 1985-11-07 Cold cathode KR920010362B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019850008299A KR920010362B1 (en) 1985-11-07 1985-11-07 Cold cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850008299A KR920010362B1 (en) 1985-11-07 1985-11-07 Cold cathode

Publications (2)

Publication Number Publication Date
KR870005428A true KR870005428A (en) 1987-06-08
KR920010362B1 KR920010362B1 (en) 1992-11-27

Family

ID=19243554

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008299A KR920010362B1 (en) 1985-11-07 1985-11-07 Cold cathode

Country Status (1)

Country Link
KR (1) KR920010362B1 (en)

Also Published As

Publication number Publication date
KR920010362B1 (en) 1992-11-27

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