KR860007726A - Bipolar transistor - Google Patents
Bipolar transistorInfo
- Publication number
- KR860007726A KR860007726A KR1019860000499A KR860000499A KR860007726A KR 860007726 A KR860007726 A KR 860007726A KR 1019860000499 A KR1019860000499 A KR 1019860000499A KR 860000499 A KR860000499 A KR 860000499A KR 860007726 A KR860007726 A KR 860007726A
- Authority
- KR
- South Korea
- Prior art keywords
- bipolar transistor
- bipolar
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60-47829 | 1985-03-11 | ||
| JP60047829A JPS61207064A (en) | 1985-03-11 | 1985-03-11 | Bi-polar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860007726A true KR860007726A (en) | 1986-10-15 |
| KR900001244B1 KR900001244B1 (en) | 1990-03-05 |
Family
ID=12786241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019860000499A KR900001244B1 (en) | 1985-03-11 | 1986-01-27 | Bipolar transistor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS61207064A (en) |
| KR (1) | KR900001244B1 (en) |
| CN (1) | CN1003149B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315186C (en) * | 2004-05-01 | 2007-05-09 | 江苏长电科技股份有限公司 | Mini flipchip transistor and method for manufacturing same |
-
1985
- 1985-03-11 JP JP60047829A patent/JPS61207064A/en active Pending
-
1986
- 1986-01-27 KR KR1019860000499A patent/KR900001244B1/en not_active IP Right Cessation
- 1986-03-07 CN CN86100522.8A patent/CN1003149B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN1003149B (en) | 1989-01-25 |
| CN86100522A (en) | 1986-09-10 |
| KR900001244B1 (en) | 1990-03-05 |
| JPS61207064A (en) | 1986-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050225 Year of fee payment: 16 |
|
| EXPY | Expiration of term |