KR860002206B1 - El display device - Google Patents

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KR860002206B1
KR860002206B1 KR1019840007951A KR840007951A KR860002206B1 KR 860002206 B1 KR860002206 B1 KR 860002206B1 KR 1019840007951 A KR1019840007951 A KR 1019840007951A KR 840007951 A KR840007951 A KR 840007951A KR 860002206 B1 KR860002206 B1 KR 860002206B1
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layer
display device
insulating layer
voltage
wavelength
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KR860005239A (en
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손상호
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주식회사 금성사
허신구
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells

Abstract

An electroluminescence(EL) display element is made by evaporation in a sequence of a transparent electrode(2), a lower insulting layer(3), a luminescent layer(4), an uooer insulating layer(5), and a back electrode(6) on a glas basis(1). The luminescent layer of Si3N4(4) is evaporated ina sequence of a lower photoluminescent layer(4a), ZnS/Mn layer(4a), and an upper photoluminescent layer(4c). The Pl lyer(4a, 4c) are evaporated in a sequesnce of Na0.5 Tb0.25 Eu0.25 and Wo4 in which each width is about 1000∦.

Description

EL표시소자EL display element

제1도는 종래의 E L 표시소자를 보인 부분사시도.1 is a partial perspective view showing a conventional E L display element.

제2도는 동 표시원리를 보인 확대단면도.2 is an enlarged cross-sectional view showing the principle shown.

제3도는 본 발명의 E L표시소자를 보인 부분사시도.3 is a partial perspective view showing the E L display device of the present invention.

제4도는 동 표시원리를 보인 확대 단면도.4 is an enlarged cross-sectional view showing the principle of the display.

제5도는 종래 E L표시소자와 본 발명 E L 표시소자의 전압-휘도 특성을 보인 그래프.5 is a graph showing voltage-luminance characteristics of the conventional E L display device and the E L display device of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 유리기판 2 : 투명전극1 glass substrate 2 transparent electrode

3 : 하부절연층 4 : 형광층3: lower insulating layer 4: fluorescent layer

4a : 하부 PL층 4b : 황화아연/망간층4a: Lower PL layer 4b: Zinc sulfide / manganese layer

4c : 상부 PL층 5 : 상부절연층4c: upper PL layer 5: upper insulating layer

6 : 배면전극6: back electrode

본 발명은 평면표시 장치인 E L표시소자(Electro Luminescence display element)에 관한 것으로 발광효율 및 휘도를 개선하기 위해 E L형광층 양면에 PL형광층을 증착한 E L표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an EL display device, which is a flat panel display device, and to an EL display device in which a PL fluorescent layer is deposited on both surfaces of an EL display layer to improve luminous efficiency and luminance.

종래 기술의 E L표시소자는 제1도에 도시한 바와 같이 유리가판(1) 위에 산화주석(Sn2O3)막을 스퍼터링(Sputtering)하여 포토에칭법으로 스트라이프 형상의 투명전극(2)를 형성하고, 그위에 질화실리콘(Si3N4) 하부절연층(3)을 증착하여, 다시 그 위에 황화아연/망간(ZnS/Mn0 형광층(4), 질화실리콘(Si3N4)상부절연층(5) 및 알루미늄(Al) 배면전극(6)을 순차적으로 증착시켜 교류전압(7)으로 화상을 표시하도록 되어 있다.In the conventional EL display device, as shown in FIG. 1, a tin oxide (Sn 2 O 3 ) film is sputtered onto the glass substrate 1 to form a stripe-shaped transparent electrode 2 by photoetching. And depositing a silicon nitride (Si 3 N 4 ) lower insulating layer thereon, followed by zinc sulfide / manganese (ZnS / Mn0 fluorescent layer 4) and silicon nitride (Si 3 N 4 ) upper insulating layer ( 5) and the aluminum (Al) back electrode 6 are sequentially deposited to display an image with an alternating voltage 7.

이와 같은 종래 기술의 E L표시소자는 제2도에 도시한 바와 같이 투명전극(2)과 배면 전극(6) 사이에 150V-200V의 교류전압이 인가되면 ZnS/Mn 형광층(4) 양단에 다음식에 의해 유도된 106V/cm의 고전계에As shown in FIG. 2, the EL display device of the related art is applied to both ends of the ZnS / Mn fluorescent layer 4 when an AC voltage of 150 V to 200 V is applied between the transparent electrode 2 and the back electrode 6. As shown in FIG. At a high field of 10 6 V / cm induced by food

Figure kpo00001
Figure kpo00001

의하여, 전하밀도가 높은 경계면에 몰려 있는 전자(e)들이 교류펄스(7)의 +, -극성에 따라

Figure kpo00002
↑방향으로 가속되어 형광층(4)내의 Mn원자(a)를 여기시켜 5850Å의 황등색광이 발생된다.As a result, electrons (e) gathered at the interface with high charge density depend on the + and-polarities of the AC pulse (7).
Figure kpo00002
It accelerates in a ↑ direction to excite the Mn atom a in the fluorescent layer 4 to generate 5850 Å of yellowish orange light.

이와같은 종래 기술의 E L표시소자는 고전계가 결려야 발광하기 때문에 비교적 높은 전압이 요구되고, ZnS형광층의 발광 효율과 휘도가 낮아 화상이 비교적 선명하지 못하였다.Since the EL display device of the prior art emits light only when a high electric field is lacking, a relatively high voltage is required, and the image of the ZnS fluorescent layer has low luminous efficiency and luminance, and thus an image is not clear.

이러한 종래 E L표시소자의 결점을 보완하기 위해 안출한 본 발명은 ZnS/Mn 형광층(4)의 양면네 P L(Photo Luminescence)물질인 Na0.25Eu0.25Wo4을 증착시켜서 상, 하부 P L발광층을 형성하여 파장 5850Å와 파장 6140Å의 적색광이 발생되도록 한 것으로, 이를 참부한 도면에 의해 상세히 설명하면 다음과 같다.The present invention devised to compensate for the shortcomings of the conventional EL display device is formed by depositing Na 0.25 Eu 0.25 Wo 4, which is a double photoluminescence (PL) material of the ZnS / Mn fluorescent layer 4, to form upper and lower PL light emitting layers. Thus, red light having a wavelength of 5850 Å and a wavelength of 6140 발생 is generated, which will be described in detail with reference to the accompanying drawings.

본 발명의 E L표시소자는 제3도에 도시한 바와 같이 유리기판(1)상에 투명전극(2)을 형성하고 그 위에 Si3N4하부절연층(3)을 증착시켜서 다시 그 위에 형광층(4)을 형성하여, 다시 그 위에 Si3N4상부절연층(5) 및 Al배면전극(6)이 순차적으로 증착되고 교류전압(7)으로 발광시키는 종래 기술의 E L표시소자에 있어서, 유리기관(1)상에 Si3N4하부절연층(3)을 2000Å두께로 스퍼터링 하고 그 위에 1000Å두께의 Na0.5Tb0.25Eu0.25Wo4하부 P L층(4a), 2500Å 두께의 ZnS/Mn층 (4b) 및 1000Å 두께의 Na0.5Tb0.25Eu0.25Wo4상부 P L층 (4c)을 차레로 증착한 것이다.In the EL display device of the present invention, as shown in FIG. 3, the transparent electrode 2 is formed on the glass substrate 1, and the Si 3 N 4 lower insulating layer 3 is deposited thereon, and the fluorescent layer thereon. In the EL display device of the prior art in which (4) is formed, and the Si 3 N 4 upper insulating layer 5 and the Al back electrode 6 are sequentially deposited thereon and emit light at an alternating voltage 7, glass A sputtered Si 3 N 4 lower insulating layer 3 on the engine 1 to 2000 mW and a Na 0.5 Tb 0.25 Eu 0.25 Wo 4 lower PL layer 4a of 1000 m thick and a ZnS / Mn layer of 2500 m thick ( 4b) and 1000 μm thick Na 0.5 Tb 0.25 Eu 0.25 Wo 4 upper PL layer 4c were deposited sequentially.

이와 같은 본 발명 E L표시소자의 작용 효과를 도면에 상세히 설명하면 다음과 같다.Such an effect of the present invention E L display device will be described in detail with reference to the drawings.

제4도는 투명전극(2) 배면전극(6)에 교류전압(7)이 인가되면 발생하는 전장 E에 의해 펄스전압(7)의 +, -극성에 따라 파장 6140Å 및 5850Å의 적색광이 방출됨을 보인 것이다. 도면중 (9),(10),(11)로 표시된 실선은 +극성인가시 (12),(13),(14)로 표시된 점선은 -극성 인가시 각각 ↓, ↑방향으로 가속되는 전자(e)에 의해 방출되는 적색광의 이동 경로를 보인 것으로, (9)는 경계면 (15)의 전자(e)가 Eu원자(a)를 여기시켜 발생되는 Eu원자 (a)의 적색광(c)이 형광층(4) 내부의 전자(e)를 가속시키고, 가속된 전자(e)가 하부 PL층(4a) 내부의 Eu원자(a)를 여기시켜 방출되는 파장 6140Å의 적색광, (10)은 경계면(17)의 전자(e)가 하부 P L층(4a) 내부의 Eu원자(a)를 여기시켜 방출되는 파장 6140Å의 적새광, (11)은 경계면(16)의 전자(e)가 가속되어 형광층(4) 내부의 Mn원자(b)를 여기시켜 방출되는 파장5850Å의 적색광이다.4 shows that red light having a wavelength of 6140 kHz and 5850 Å is emitted according to the + and − polarities of the pulse voltage 7 by the electric field E generated when the AC voltage 7 is applied to the back electrode 6 of the transparent electrode 2. will be. The solid lines indicated by (9), (10), and (11) in the figure are dotted lines indicated by (12), (13) and (14) when + polarity is applied, and electrons accelerated in the ↓ and ↑ directions by -polar application respectively. (9) shows that the red light (c) of the Eu atom (a) generated by the electron (e) of the interface 15 excited by the Eu atom (a) is shown. Red light having a wavelength of 6140 kHz emitted by accelerating electrons (e) inside the layer (4) and excited electrons (e) excited by the Eu atoms (a) inside the lower PL layer (4a), (10) is an interface ( Red light having a wavelength of 6140 GHz emitted by electrons e of 17) excites Eu atoms a in the lower PL layer 4a, and electrons e of the interface 16 are accelerated by the fluorescent layer 11. (4) Red light of wavelength 5550 kHz emitted by exciting an internal Mn atom (b).

그리고, (12)는 경계면(16)의 전자(e)가 상부 P L층(4c)내부의 Eu원자(a)를 여기시켜 직접 투명전극 (2)을 통해 방출되는 파장 6140Å의 적색광, (13)은 계면(17)의 전자(e) 형광층(4) 내부의 Mn원자 (b)를 여기시켜 방출되는 파장 5850Å의 광(c)이 하부 P L층(4a)의 Eu원자(a)를 여기시켜 방출시키는 파장 6140Å의 적색광, (14)는 경계면(18)의 전자(e)가 하부 P L층 (4a)내부의 Eu원자(a)를 여기시켜 방출되는 파장 6140Å의 적색광을 보인 것이다.And (12) red light having a wavelength of 6140 kHz in which electrons (e) at the interface (16) excite Eu atoms (a) in the upper PL layer (4c) and are directly emitted through the transparent electrode (2), (13) The light (c) having a wavelength of 5850 GHz emitted by exciting the Mn atom (b) in the electron (e) fluorescent layer 4 of the silver interface 17 excites the Eu atom (a) of the lower PL layer 4a. The red light having a wavelength of 6140 kHz to be emitted (14) shows the red light having a wavelength of 6140 kHz which is emitted by the electron (e) at the interface 18 exciting the Eu atom (a) in the lower PL layer 4a.

상기와 같이 이중 P L 층 (4a), (4a)구조는 교류펄스(7)의 극성에 관계없이 많은 수의 Eu원자(a) 및 Mn원자(b)를 여기시켜 <휘도(B) ∝ 여기된 원자수(Ne)>식으로 표현되는 바와 같이 휘도가 향상된다.As described above, the double PL layers 4a and 4a structure excite a large number of Eu atoms (a) and Mn atoms (b) irrespective of the polarity of the alternating pulse (7). As expressed by the number of atoms Ne>, the luminance is improved.

첨부한 도면 제5도는 이러한 휘도의 향상을 보이기 위한 특성도로서 도면중 x측에는 전압(V), Y축에는 휘도(fL)가 표시되고 도시된 곡선 a, b는 전압-휘도 곡선으로 a는 종래 b는 본 발명의 전압-휘도곡선이다.FIG. 5 is a characteristic diagram showing the improvement of luminance, in which voltage (V) is displayed on the x side and luminance (fL) is displayed on the Y-axis, and curves a and b are voltage-luminance curves and a is a conventional b is the voltage-luminance curve of the present invention.

도시한 바와 같이, 종래보다 낮은 전압에서 발광이 개시됨을 보이고, 훨씬 낮은전압에서도 종래와 동일한 휘도가 되며, 동일 전압에서 휘도가 몇배이상 향상됨을 보인다.As shown, the light emission is shown to be started at a lower voltage than in the prior art, the brightness is the same as in the prior art even at a much lower voltage, and the luminance is improved several times or more at the same voltage.

Claims (2)

유리기판(1)상에 투명전극(2), 하부절연층(3), 형과층(4), 상부절연층(50 및 배면전극(6)이 순차적으로 증착되고 교류 전압(7)으로 발광시키는 E L표시 소자에, 있어서 질화실리콘(Si3N4) 하부절연층(3)위에 하부P L층 (4a), ZnS/Mn (4b), 상부 P L 층(4a)을 차례로 증착하여 형성되는 형광층(4)으로 구성함을 특징으로 하는 E L표시소자.The transparent electrode 2, the lower insulating layer 3, the mold layer 4, the upper insulating layer 50 and the back electrode 6 are sequentially deposited on the glass substrate 1 and emit light at an alternating voltage 7. In the EL display device, a fluorescent layer formed by sequentially depositing a lower PL layer 4a, a ZnS / Mn (4b), and an upper PL layer 4a on a silicon nitride (Si 3 N 4 ) lower insulating layer 3 (4) an EL display element characterized by the above-mentioned. 제1항에 있어서, 상, 하부, P L층 (4c), (4a)은 Na0.5Tb0.25Eu0.25Wo4를 각각 약 1000Å 두께로 증착하여 구성함을 특징으로 하는 E L표시소자.The EL display device according to claim 1, wherein the upper, lower, PL layers (4c) and (4a) are each formed by depositing Na 0.5 Tb 0.25 Eu 0.25 Wo 4 to a thickness of about 1000 kPa.
KR1019840007951A 1984-12-14 1984-12-14 El display device KR860002206B1 (en)

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