KR860001843B1 - Lighting circuit for a fluorescent lamp - Google Patents

Abstract

Lighting appts. for a discharge lamp comprises a discharge lamp with a current limiting device connected in series, consisting of a ferroelectric polycrystalline ceramic body comprising mainly BaTiO3 with an impedance radio calculated from a current value obtd. when measured in an alternating field of 5V/mm to an impedance (Z2) measured in an alternating field of 500 V/mm or less, of 1/10 or less. The lighting appts. is small in size and exhibits a lower power less than the prior art, while still having sufficient current capacity to operate the discharge lamp.

Description

Discharge lamp lighting device

1 is a discharge lamp lighting apparatus using a capacitor as a current limiting element.

2 is a voltage-current waveform diagram of the circuit of FIG.

3 is a conventional conventional dielectric hysteresis curve.

4 is a hysteresis curve diagram of a conventional BaTiO ₃ -based high-k dielectric.

5 is a characteristic measurement circuit of a current limiting element used in the lighting device of the present invention.

6 is a voltage current waveform diagram of a current limiting device according to the present invention.

7 is a D-E hysteresis characteristic diagram of the current limiting device according to the present invention.

8 to 10 are experimental results of the voltage dependence of the impedance of the current limiting device according to the present invention.

11 is a structural example of a current limiting element according to the present invention.

12 is a circuit diagram of a lighting device using the present invention.

13 is an operational waveform diagram of each part of the apparatus of FIG.

14 shows another circuit of the lighting apparatus using the present invention.

15 is a structural example of a discharge lamp using the present invention.

16 is another circuit example of the lighting apparatus using the present invention.

FIG. 17 is an operational waveform diagram of each part of FIG. 16; FIG.

* Explanation of symbols for main parts of the drawings

1: AC power supply 2: condenser

3: discharge lamp 4: current limiting device

SUMMARY OF THE INVENTION The present invention provides a discharge lamp lighting device that is significantly smaller and lighter than a conventional discharge lamp lighting device, and provides a measure of miniaturization and weight to a discharge lamp in which a current limiting element is assembled inside the discharge lamp.

Conventionally, current limiting elements required to light a discharge lamp include a copper wire wound around a magnetic core of a silicon steel sheet or the like, a capacitive element using a dielectric such as a plastic film, paper, or a resistance element using a nichrome wire or the like.

All of them have the current capacity required to light the discharge lamp, but the weight and shape are large, and the power loss is large with respect to the resistance element, which is a large drawback when used in the discharge lamp.

Accordingly, the present invention has been made to solve the above drawbacks of the prior art, and an object thereof is to provide a discharge lamp lighting apparatus having a small size and low power loss. It is a discharge lamp blinker using current limiter.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Here, the circuit operation in the case of using an ordinary capacitor as a discharge lamp current limiting element which is the basic content of the present invention will be described, and the characteristics required as the capacitor will be described.

1 is a circuit diagram of a lighting device, (1) is an AC power supply, (2) is a general capacitor using a conventional dielectric such as paper, and (3) is a discharge tube. 2 is a waveform of the power supply voltage V ₁ , a waveform of the discharge tube voltage V _T , a waveform of the discharge tube current A _T , and a waveform of the capacitor voltage V _C. When the discharge tube voltage V _T reaches the discharge start voltage V _B0 in the phase θ ₁ , the discharge tube 3 starts discharging, and the current A _P , which is very rapidly formed from the capacitor 2, becomes the capacitor ( It flows into the discharge tube 3 of 2). Since the current continues to the phase θ _{3 where the} power supply voltage V ₁ reaches a peak value, and after the phase θ ₃ , the current voltage enters a period lower than the peak value, The flowing discharge tube current A _T does not flow, and the current rest period continues until the phase θ ₄ where the negative discharge start voltage is applied to the discharge tube 3. After that, the same operation is repeated for every cycle, and the discharge tube 3 continues to discharge. The characteristic of the lighting device using this capacitor is that the current in the phase θ ₁ has a very large peak value, which causes the flicker of discharge, and the discharge tube life is also extremely short.

In general, when a capacitor is used as a current limiting element in order to prevent this phenomenon, the capacitor is connected in series with a resistor or an inductance having a very large impedance value, but this causes a large loss of power and an inductance in the resistor. Defects occur.

From the above description, the following characteristics are preferable in order to target a small-sized, light-capacitance element as a discharge lamp current limiting element.

(1) After the discharge tube starts discharging, increase the current between phases (θ ₂ to θ ₃ ). For this reason, the relative dielectric constant? _S of the capacitor is made as large as possible, and the capacitor is a large capacity capacitor.

(2) Reduce the current peak value (A _P ) flowing into the discharge tube at the start of discharge of the discharge tube.

First, the present inventor focuses on a BaTiO _3- based magnetic capacitor having a large dielectric constant of about 20,000 as compared to a film having a relative dielectric constant (ε _S ) of 3 to 15 as a capacitor, and a small and lightweight capacitive current limiting element. As a result of repeating the examination with various ferroelectric ceramic compositions for the purpose of obtaining a large capacity by a composition system having a high relative dielectric constant (ε _S ), as a practical dielectric constant (ε _S ), As one could only get around 20,000.

Thus, to study the results of investigation it is not enough to obtain a high capacity due to high in composition of the dielectric constant (ε _S) paying attention to the AC voltage dependence of the BaTiO ₃ based dielectric constant of a magnetic (ε _S) various studies with respect to the result, The high dielectric constant magnetic composition of the BaTiO ₃ system is well known in Japan, 52-44440. It is well known that the relative dielectric constant (ε _S ) is increased by about 100 to 140% by applying an alternating voltage. have. Here, the inventors considered that the relative dielectric constant epsilon _S varies with the applied voltage, indicating that the relative dielectric constant epsilon _S has a voltage dependency on the polarization shape.

In a normal dielectric, the voltage dependence of the relative dielectric constant epsilon _S is ignored, and the flux density D in the dielectric is determined by the following equation.

D = εE ε = ε ₀ ε _S

D: transmission density

ε ₀ : dielectric constant of vacuum

E is the electric field applied

ε: dielectric constant

ε _S : relative dielectric constant

Soya is a means of observing this relationship. It is common to see D-E hysteresis in the circuit of the tower.

FIG. ₃ shows the DE hysteresis characteristics of a conventional dielectric and FIG. 4 of a BaTiO ₃ -based high dielectric constant magnetic dielectric. This hysteresis shows that the DE hysteresis loop is in a linear relationship in a normal dielectric (FIG. 3). However, in the case of the BaTiO ₃ -based magnetic dielectric, ε is changed by E, not a linear relationship. Here, the BaTiO _3- based high-k dielectric was measured as a capacitor, and the capacitance voltage characteristics were measured using Sering Bridge. It was confirmed again that the capacity increase rate, which is quoted in Japanese Patent Office 52-44440, was about 2 to 2.4 times. .

This shows the following facts. In other words, the fact that D-E hysteresis is not a linear relationship indicates that ε of the equation D = εE is changing as a function of an applied alternating current electric field.

Herein, the present inventors have conducted studies on a magnetic composition having a high capacity increase rate, that is, a rapid granulation of DE and hysteresis loops. As a result, BaTiO ₃ alone or Sn, Zn, or the like as a minor component is substituted for part of Ti of BaTiO ₃ . Either one or a part of Ba substituted with Sr and Pb gives good results as the basic composition.

In the case of other than the BaTiO ₃ system, the capacity increase rate does not increase unless a low capacity increase rate or a very high AC current field is applied, and it is not practical from the relationship with the withstand voltage of the magnetic field. Furthermore, by containing a small amount of an oxide of Mn or Cr as a mineralizer (additive) in such a basic composition, it is possible to prevent reduction in self-sintering or to improve the sintering property and to achieve a finer and more homogeneous polycrystal without impairing properties. It turned out. This is characterized by the element and the amount as an additive, Mn and Cr is the best and the appropriate addition amount was 0.005 to 0.3% by weight in MnO, 0.005 to 0.3% by weight in CrO.

Moreover, even if it contains and contains both as a mixture, favorable result is obtained. It has also been found that the above-mentioned basic composition loses its properties significantly if it contains more than a certain amount of impurities contained in the raw materials and impurities mixed from the manufactured pine, for example, Al ₂ O ₃ SiO ₂ .

These phenomena are estimated as follows. That is, Sr, Sn, Zr, and Pb basically enter into BaTiO ₃ crystals to form a solid solution, and have a function of adjusting the characteristics without losing ferroelectricity in the formed particles, but Mn and Cr are mainly precipitated in the grain boundary. The role of the mineralizer which promotes sintering of porcelain and at the same time serves as a reduction prevention, itself is always a dielectric, and the electrical integrity is different from the crystal grain itself. Originally, the composition needs to take out the AC voltage dependence of the relative dielectric constant? _{S which} is a characteristic of ferroelectricity to the maximum, and a good result is obtained with a small grain boundary of the abnormal dielectric layer. In addition, impurities in the composition are sintered and cut out at the grain boundaries, and always form a dielectric or solid solution with BaTiO ₃ to weaken the ferroelectricity.

As described above, the present inventors find an aptitude as a small, lightweight, capacitive current limiting element in a BaTiO ₃ -based composition, and use it as a capacity increase rate when an alternating current field is applied to each composition, that is, as a current limiting element. Various studies were conducted on the impedance reduction rate and the phenomenon when used as a current limiting element such as the composition discharge.

Hereinafter, the present invention will be described in detail with reference to Examples of the BaTiO ₃ -based composition and the discharge lamp lighting apparatus.

Example 1

The raw material powders BaCO ₃ , TiO ₂ , SnO ₂ , ZrO ₂ , PbO, MnCO ₃ are wet-mixed using polyethylene pots and menobool to have desired compositions (No. 1 to No. 15) of the first table. After drying, the mixture was kept at 1150 ° C. for 2 hours, plasticized, and then ground again using polyethylene pot and menobool.

Water was evaporated, an appropriate amount of binder was added thereto, and a 10-ton press was press-molded on a 16.5, 0.6 mm disc. It was then fired for 2 hours at 1300 to 1400 ° C. The silver electrode was then baked at 800 ° C., and then the lead wire was fixed and cleaned by soldering, and then coated with an insulating paint. An alternating voltage of 50 Hz was applied to observe the waveform of the current voltage at that time. Furthermore, when the effective voltage difference was changed, the effective current was measured and the impedance Z was calculated.

5 is the measuring circuit, 1 is a 50 Hz AC power supply, and 2 is an element to be measured. 6 shows the voltage-current waveforms of the elements of No. 2 in the first table. 7 shows D-E hysteresis characteristics of the copper element, and the causal voltage is about 280V. The characteristics shown in FIGS. 6 and 7 are also shown for the elements of FIGS. 1 and 3 to 13.

As can be seen from FIG. 6, the current waveform of the device is significantly different from that of a capacitor using a dielectric such as a conventionally known paper, plastic film, or general BaTiO ₃ -based magnet. When the DE hysteresis characteristic of FIG. 7 is compared with that of FIG. 3 or FIG. 4, it exhibits a very rapid full-density granularity, from which the capacity increase rate is estimated, and this hysteresis characteristic is described below. Related to characteristic AC voltage-current characteristics.

This characteristic characteristic (1) The current of a general capacitance element precedes voltage by 1/4 / cycle, whereas this element leads only about 1/8 cycle. (2) The change in the current value in the period of transition from charging to discharging (period from phase θ ₁ to θ ₂ ) is much slower than that of the sine wave. It is assumed that these phenomena are mainly caused by the polarization of the device, but the gentle movement of the current during discharge in paragraph (2) is very useful when the device is used as a discharge lamp current limiting device.

1 and 8 show the change in impedance when the voltage per unit thickness is changed from 5V / mm to 1,000V / mm. From these, the main components of BaTiO ₃ (except sample Nos. 14 and 15) show sufficient voltage sensitivity, that is, a sufficient drop in impedance when an AC voltage is applied.

TABLE 1

Example 2

In Example 1, when the result of having a good impedance reduction rate was obtained, the type of the mineralized mineral (additive) and the range of its additives were examined. Examples of the most average of these are shown in Table 2 and FIG. In other words, ₁ mol or a combination of MnCO ₃ and Cr ₂ O ₃ as an additive was added to 94 mol% BaSnO ₆ 6 mol% of BaTiO ₃ as shown in Table 2 to measure the waveform and impedance values as in Example 1. It was. As a result, in addition to the samples No. 6 and No. 12, the addition of additives does not cause any loss of properties, and the reduction of self-sintering or the sinterability thereof is improved, and a more compact and homogeneous polycrystal is obtained. When adding these additives, for example, Mn is MnCO ₃ and Cr is added as Cr ₂ O ₃ , but not limited thereto, and the same effect can be obtained even when used as another compound, and the addition amount is also added. In consideration of the state of, the content of Cr ₂ O ₃ is considered to be 0.005 to 0.3% by weight of Cr in the practical range, and at 0.5% by weight or more, the decrease in impedance is small and undesirable. On the other hand, with respect to MnCO ₃ in the same way, 0.005 to 0.3% by weight of Mn is considered to be a practical range. In yet not more than 0.005 wt% and MnCO ₃ was not observed with the effect due to the addition.

TABLE 2

Example 3

As shown in the third table, those exhibiting good characteristics in Examples 1 and 2 are added to impurities, particularly those contained in raw materials, or added to elements that are easy to be mixed in the material manufacturing process. As a result of measuring the impedance value, as shown in Table 3 and FIG. 10, the characteristics of Sample Nos. 4 and 8 are insufficient, and therefore, the impurity exhibits a sufficient impedance drop if they are not 0.5 wt% or less. It turned out not to. In addition, the voltage and current waveforms of the compositions of Examples 2 and 3 were observed as described in Example 1, but waveforms approximately similar to those of Example 1 were observed for the large impedance reduction rate.

Example 4

The composition of No. 2 in Table 1 was formed into a flat plate of 12 mm x 12 mm and 0.6 mm thickness by the same mixing and baking process as in Example 1, and the silver bulb was attached in an area of 11 mm x 11 mm, as shown in FIG. 20 sheets were laminated. Here, A represents a silver bulb, and B represents a BaTiO ₃ -based gene body.

The element thus constructed was used as the current limiting element of the FLOW fluorescent lamp in the circuit of FIG. 12, and the voltage and current waveforms at this time were observed. The waveform of each part is shown in FIG. At this time, the current Ar of the discharge tube effective using 100 V 50 Hz as the power source was 350 mA (r, m, s). As is apparent from the discharge tube current A _T waveform of FIG. 13, the current A _P in the phase θ ₁ is extremely low compared with the waveform of FIG. Indicated.

For reference, a lighting circuit using a general capacitor is shown in FIG. In order to obtain 350 mA of the effective value of the discharge tube, 50 Ω and 10 μF (150 WVAC) were required for the resistor 5 as the resistor 5.

Here the dimensions of 10 μF (150 WVAC) were 50 × 30 × 55 mm and the weight was 120 g. On the other hand, the device of the present invention was 12 x 12 x 12 mm and the weight was 12 g. Here it was found how useful the device of the present invention is for miniaturization and weight reduction. Taking advantage of this advantage, Fig. 15 shows an embodiment in which a fluorescent lamp is mounted on a mouthpiece of a conventional incandescent bulb, and the present device 4 is incorporated as a current limiting device therein. Therefore, according to the present invention, a fluorescent lamp can be used in almost the same way as a conventional incandescent bulb.

Example 5

FIG. 16 is an exemplary embodiment in which an inductance 6 is inserted in series with the element 4 in order to lower the value of the discharge tube current A _P. The power voltage waveform V _I and the discharge tube current Ar at this time are shown. The waveform is shown in FIG. 7 is the thyristor in which the means for preheating the filament is the thyristor. Here, the impedance 5 (V) / 350 (mA) at 50 Hz of the inductance 6 is the same as that of Example 4 except the impedance 6 = It was 14 (Ω).

Of course, in order to suppress the value of A _P , a resistor is used instead of an inductance, and it is clear that an extremely small resistance value is good compared to a resistor in the case of using a general capacitor.

As described above, when the BaTiO _3- based porcelain obtained in Examples 1, 2 and 3 having a large impedance reduction rate when applying a regulated voltage is used as a discharge lamp lighting circuit current limiting device, its shape is compared with conventional capacitive devices. Is very small and light in weight, and as can be seen from the AC voltage characteristic, the current during discharge is very low, and therefore very small capacity is required even if inductance or resistor used in series with the capacitive element is unnecessary or diarrhea required. It is advantageous that the power loss generated therefrom is reduced, and both the shape and the weight are small.

TABLE 3

Claims (7)

In a discharge lamp having a discharge lamp and a current limiting device connected in series with the discharge lamp, A discharge lamp lighting device characterized in that a ferroelectric wire polycrystalline porcelain composed mainly of barium titanate is used as the current limiting device. A discharge lamp lighting device having a discharge lamp and a current limiting device connected in series with the discharge lamp, As the current limiting device, the ratio (Z ₂ / Z ₁ ) between the impedance value (Z ₁ ) obtained from the current value measured at an AC field of 5 V / mm and the impedance tee (Z ₂ ) at an AC field of 500 V / mm or less is A discharge lamp lighting device using ferroelectric polycrystalline magnetism mainly composed of barium titanate (BaTiO ₃ ), which is 1/10 or less. The method of claim 2, A discharge lamp lighting device characterized in that a resistance or inductance is connected in series with the barium titanate ferroelectric polycrystalline magnet as the current limiting device. The method according to claim 2 or 4, And the current limiting device is a barium titanate-based ferrogeneous polycrystalline magnet and the magnets are alternately connected in a stacked structure. The method of claim 4, wherein A discharge lamp lighting device characterized in that the current limiting element is a ferroelectric magnet having barium titanate (BaTiO ₃ ) as a main component, a part of Ba being replaced with Sr or Pb, and a part of Ti being substituted with Zr or Sn. The method of claim 4, wherein The current limiting element is barium titanate (BaTiO ₃ ) as a main component, a part of Ba is replaced by Sr or Pb, a part of is replaced by Sn, and as a mineralizer, 0.005 to 0.3% by weight of Cr and 0.005 to 0.3% by weight. A discharge lamp lighting device, characterized in that at least one of% Mn is added. The method of claim 6, A discharge lamp lighting device characterized in that the amount of an element such as an impurity other than the main component of the current limiting element and the mineralizer is 0.5% by weight or less.

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