KR860001006A - Carbon-carbon composites - Google Patents

Carbon-carbon composites Download PDF

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Publication number
KR860001006A
KR860001006A KR1019840004555A KR840004555A KR860001006A KR 860001006 A KR860001006 A KR 860001006A KR 1019840004555 A KR1019840004555 A KR 1019840004555A KR 840004555 A KR840004555 A KR 840004555A KR 860001006 A KR860001006 A KR 860001006A
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KR
South Korea
Prior art keywords
carbon
substrate
mils
sic
layer
Prior art date
Application number
KR1019840004555A
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Korean (ko)
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KR900001544B1 (en
Inventor
다니엘 벨트리(외 1) 리챠드
Original Assignee
로버트 시. 위커
유나이티드 테크놀로지스 코오포레이숀
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Priority to KR1019840004555A priority Critical patent/KR900001544B1/en
Publication of KR860001006A publication Critical patent/KR860001006A/en
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Publication of KR900001544B1 publication Critical patent/KR900001544B1/en

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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Abstract

내용 없음No content

Description

탄소-탄소 합성물질Carbon-carbon composites

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 탄소-탄소조성물에 칠해지는 여러가지 혼합피복 및 거기에 따른 산화성을 나타낸 흐름도표이다.FIG. 1 is a flow chart showing various mixed coatings applied to a carbon-carbon composition and oxidizing properties thereof.

제2,3,4와 5도는 본 발명에 따라 피복된 억제성 탄소-탄소 조성물의 산화석을 나타낸 그래프이다.2, 3, 4 and 5 are graphs showing the oxide of the inhibitory carbon-carbon composition coated according to the present invention.

Claims (7)

탄소-탄소기판, 본 기판상에 약 0.5-30밀 두께로 완전하게 팩유도된 SiC피복과 SiC층의 외부표면상에 약 3-30밀두께로 CVD처리된 Si3N4층으로 구성된, 가온상태에서 주위의 작용에 대해 저항성을 갖는 탄소-탄소 합성물질Carbon-carbon substrate, warmed, consisting of a Si 3 N 4 layer that is completely packed with a thickness of about 0.5-30 mils on the substrate and a CVD process of about 3-30 mils on the outer surface of the SiC layer Carbon-carbon composites resistant to ambient action in the state 탄소-탄소기판, 본 기판상의 약 1-5밀두꼐의 피롤리틱 그래파이트층, 본 층상에 약 0.5-30밀두께로 완전하게 팩유도된 SiC피복과 SiC층의 외부표면상에 약 3-30밀두께로 CVD처리된 Si3N4층으로 구성된, 가온상태에서 주위의 작용에 대해 저항성을 갖는 탄소-탄소 합성물질Carbon-carbon substrate, about 1-5 mil thick pyrolytic graphite layer on the present substrate, about 0.5-30 mil thick, completely packed and guided on the outer surface of the SiC layer Carbon-carbon composite with resistance to ambient action in warm state, consisting of Si 3 N 4 layer CVD to wheat 탄소-탄소기판, 본 기판상에 약 0.5-5밀두께로 CVD처리된 SiC, 본 기판표면상에 약 0.5-30밀의 두꼐로 완전하게 팩유도된 SiC피복과 SiC외부표면상에 약 3-30밀두께로 CVD처리된 Si3N4층으로 구성된, 가온상태에서 주위의 작용에 대해 저항성을 갖는 탄소-탄소 합성물질Carbon-carbon substrate, SiC coated CVD on the substrate with a thickness of about 0.5-5 mils, SiC coating completely packed with a thickness of about 0.5-30 mils on the surface of the substrate and about 3-30 on the SiC outer surface Carbon-carbon composite with resistance to ambient action in warm state, consisting of Si 3 N 4 layer CVD to wheat 제1,2 또는 3항에 있어서, 유도된 SiC피복팩이 소량의 보론을 함유하는 탄소-탄소합성물질4. The carbon-carbon composite according to claim 1, 2 or 3, wherein the derived SiC coating contains a small amount of boron. 제1,2 또는 3항에 있어서, SiC피복이 약 1-10밀의 두께인 탄소-탄소합성물질The carbon-carbon composite according to claim 1, 2 or 3, wherein the SiC coating is about 1-10 mils thick. 제1,2 또는 3항에 있어서, Si3N4피복이 약 5-20밀의 두께인 탄소-탄소합성물질The carbon-carbon composite according to claim 1, 2 or 3, wherein the Si 3 N 4 coating is about 5-20 mils thick. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840004555A 1984-07-31 1984-07-31 Composite silicon carbides/silicon nitride coatings for carbon-carbon materials KR900001544B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019840004555A KR900001544B1 (en) 1984-07-31 1984-07-31 Composite silicon carbides/silicon nitride coatings for carbon-carbon materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019840004555A KR900001544B1 (en) 1984-07-31 1984-07-31 Composite silicon carbides/silicon nitride coatings for carbon-carbon materials

Publications (2)

Publication Number Publication Date
KR860001006A true KR860001006A (en) 1986-02-22
KR900001544B1 KR900001544B1 (en) 1990-03-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004555A KR900001544B1 (en) 1984-07-31 1984-07-31 Composite silicon carbides/silicon nitride coatings for carbon-carbon materials

Country Status (1)

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KR (1) KR900001544B1 (en)

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Publication number Publication date
KR900001544B1 (en) 1990-03-12

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