KR850005175A - Light-receiving diode and its manufacturing method - Google Patents

Light-receiving diode and its manufacturing method Download PDF

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Publication number
KR850005175A
KR850005175A KR1019840007563A KR840007563A KR850005175A KR 850005175 A KR850005175 A KR 850005175A KR 1019840007563 A KR1019840007563 A KR 1019840007563A KR 840007563 A KR840007563 A KR 840007563A KR 850005175 A KR850005175 A KR 850005175A
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South Korea
Prior art keywords
light receiving
solder layer
receiving diode
side electrode
manufacturing
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KR1019840007563A
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Korean (ko)
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KR890003384B1 (en
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히데아끼 니시자와
Original Assignee
나까하라 쯔네오
스미도모덴기 고오교오 가부시기 가이샤
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Publication of KR850005175A publication Critical patent/KR850005175A/en
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Publication of KR890003384B1 publication Critical patent/KR890003384B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

내용 없음No content

Description

수광 다이오우드와 그 제조방법Light-receiving diode and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 실시예에 관한 메사형 수광 다이오우드의 종단면도.1 is a longitudinal sectional view of a mesa type light receiving diode according to an embodiment of the present invention.

제2도는 본 발명의 수광 다이오우드를 사파이어기판 플랫 패키지속에 수용된 상태를 표시한 종단면도.2 is a longitudinal sectional view showing a state in which the light receiving diode of the present invention is accommodated in a sapphire substrate flat package.

제3도는 본 발명의 수광 다이오우드를 알루미나 기판상에 다이 본드한 상태를 표시한 종단면도.3 is a longitudinal sectional view showing a state in which the light receiving diode of the present invention is die-bonded on an alumina substrate.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 사파이어 기판 2 : 하부틀1: Sapphire substrate 2: Lower frame

3 : 다이본딩용 패드 4 : 개구부3: die-bonding pad 4: opening part

5 : 상부틀 6, 7 : 리이드5: upper frame 6, 7: lead

9 : 수광소자 칩 10 : n-Inp기판9: light receiving element chip 10: n-Inp substrate

11 : InGaAs 에피텍셜층 12 : Zn 확산영역11 InGaAs epitaxial layer 12 Zn diffusion region

13 : p측 전극 14 : n측 전극13: p-side electrode 14: n-side electrode

15 : 땜납층 16 : 수광면15 solder layer 16 light receiving surface

Claims (8)

수광면이 있는 쪽의 면이 다이본드용 패드에 납땜되어야 할 수광 소자 칩에 있어서, 수광면 주위에 땜납층이 되어있는 것을 특징으로 하는 수광 다이오우드.A light receiving element chip on which the side of the light receiving surface is to be soldered to the die-bonding pad, wherein a solder layer is formed around the light receiving surface. 제1항에 있어서, 땜납층이 Sn인 수광 다이오우드.The light receiving diode of claim 1, wherein the solder layer is Sn. 제1항에 있어서, 땜납층이 Au-Sn 공정합금인 수광 다이오우드.The light receiving diode of claim 1, wherein the solder layer is an Au—Sn eutectic alloy. 제1항에 있어서, 땜납층이 Au-Si 공정합금인 수광 다이오우드.2. The light receiving diode of claim 1 wherein the solder layer is an Au—Si eutectic alloy. 제1항에 있어서, 땜납층의 두께가 5∼10㎛인 수광 다이오우드.The light receiving diode according to claim 1, wherein the solder layer has a thickness of 5 to 10 m. 제1항에 있어서, 땜납층이 도금법으로 형성되는 수광 다이오우드.The light receiving diode according to claim 1, wherein the solder layer is formed by a plating method. 제1항에 있어서, 땜납층이 증착법으로 형성되어 있는 수광 다이오우드.The light receiving diode according to claim 1, wherein the solder layer is formed by a vapor deposition method. 웨이퍼 공정에 의해서, 단결정 웨이퍼 상에 에피텍셜층, Pn접합부, 및 수광측이 링 모양으로 된 P측 전극, 측 전극을 붙인후, 수광측의 전극상에 링 땜납층을 금속화하고, 그후, 웨이퍼를 스크라이브해서 개개의 수광 다이오우드 칩으로 분할하는 것을 특징으로 하는 수광 다이오우드의 제조 방법.By the wafer process, the epitaxial layer, the Pn junction, and the P-side electrode in which the light receiving side is ring-shaped and the side electrode are pasted on the single crystal wafer, and then the ring solder layer is metallized on the light receiving side electrode. A method of manufacturing a light receiving diode, wherein the wafer is scribed and divided into individual light receiving diode chips. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019840007563A 1983-12-08 1984-11-30 Receiving light diode KR890003384B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58232341A JPS60124885A (en) 1983-12-08 1983-12-08 Light-receiving diode and manufacture thereof
JP58-232341 1983-12-08

Publications (2)

Publication Number Publication Date
KR850005175A true KR850005175A (en) 1985-08-21
KR890003384B1 KR890003384B1 (en) 1989-09-19

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ID=16937681

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007563A KR890003384B1 (en) 1983-12-08 1984-11-30 Receiving light diode

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JP (1) JPS60124885A (en)
KR (1) KR890003384B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296676A (en) * 1988-05-24 1989-11-30 Nec Corp Semiconductor photodetecting device
JP5576094B2 (en) * 2009-11-11 2014-08-20 旭化成エレクトロニクス株式会社 Optical device manufacturing method and optical device
CN104697556B (en) * 2015-02-28 2017-09-12 武汉联钧科技有限公司 A kind of two waveband photoelectric sensor
TWI598653B (en) * 2016-03-16 2017-09-11 峰川光電股份有限公司 Photoelectric conversion assembly

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157174A (en) * 1974-11-14 1976-05-19 Hamamatsu Tv Co Ltd Kodenhenkansoshino seisakuho
JPS5337383A (en) * 1976-09-20 1978-04-06 Hitachi Ltd Semiconductor integrated circuit

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Publication number Publication date
JPS60124885A (en) 1985-07-03
KR890003384B1 (en) 1989-09-19
JPH0478031B2 (en) 1992-12-10

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