KR850002611A - 레이저 광원장치 - Google Patents

레이저 광원장치 Download PDF

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Publication number
KR850002611A
KR850002611A KR1019840005900A KR840005900A KR850002611A KR 850002611 A KR850002611 A KR 850002611A KR 1019840005900 A KR1019840005900 A KR 1019840005900A KR 840005900 A KR840005900 A KR 840005900A KR 850002611 A KR850002611 A KR 850002611A
Authority
KR
South Korea
Prior art keywords
laser light
light source
laser
source device
faraday
Prior art date
Application number
KR1019840005900A
Other languages
English (en)
Other versions
KR890003390B1 (en
Inventor
마사다가 시라사끼 (외 3)
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17722783A external-priority patent/JPH0249667B2/ja
Priority claimed from JP17723383A external-priority patent/JPS6068684A/ja
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼 가이샤 filed Critical 야마모도 다꾸마
Publication of KR850002611A publication Critical patent/KR850002611A/ko
Application granted granted Critical
Publication of KR890003390B1 publication Critical patent/KR890003390B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G01R33/0322—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect using the Faraday or Voigt effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1066—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a magneto-optical device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Abstract

내용 없음

Description

레이저 광원장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 기본원리를 설명하는 개략도. 제3도는 본 발명의 실시예에 따른 반도체 레이저를 이용한 레이저 광원장치의 구성을 보여주는 도. 제4도는 제3도의 장치에서 반도체레이저를 설명하는 사시도.

Claims (10)

  1. 외측 공진자에 포함된 반사판중 하나의 레이저측 앞에 설치된 파라데이 로테이터, 각기 다른 주파수를 갖고 있고 자계하에서 파라데이 로테이터를 통하여 레이저광을 가함에 의해 발생되는 시계방향 원편파 및 반시계방향 원편파로 구성되는 것을 특징으로 하는 레이저와 외측공진자를 갖는 레이저 광원장치.
  2. 제1항에 있어서, 상기 장치는 공진자의 아기겐 모우드가 진동방향에 서로 수직으로 교차하는 직선편파인 공진자를 갖고 있으며 소자를 통한 하나의 방출 및 귀환에 의하여 90°까지 편파를 회전시키는 소자들이 다른 반사면과 레이저 사이 및 파라데이 토테이터와 레이저 사이에 하나씩 배치되는 것을 특징으로 하는 레이저 광원장치.
  3. 제2항에 있어서, 레이저는 외측공진자를 갖는 반도체 레이저이고 상기 소자는 상기 소자의 축과 반도체 레이저의 활성층의 면과의 사이 각이 45°가 되도록 배치되는 것을 특징으로 하는 레이저 광원장치.
  4. 제2항 또는 제3항에 있어서, 상기 소자가 4/1파플레이트인 것을 특징으로 하는 레이저 광원장치.
  5. 제2항 또는 제3항에 있어서, 상기 소자가 45° 파라데이 토테이터인 것을 특징으로 하는 레이저 광원장치.
  6. 제5항에 있어서, 상기 45° 파라데이 로테이터가 이트륨-철-석류석으로 이루어진 것을 특징으로 하는 레이저 광원장치.
  7. 제1항에 있어서, 상기 파라데이 로테이터가 상자성 유리로 이루어지는 것을 특징으로 하는 레이저광원장치
  8. 제4항에 있어서, 상기 4/1파 플레이트가 수정플레이트로 이루어지는 것을 특징으로 하는 레이저광원장치.
  9. 제3항에 있어서, 반도체 레이저의 활성층에 인접된 도파층의 단면부분이, 레이저광이 입사하는 단면 가까이에서 확대되어 방출되는 것을 특징으로 하는 레이저 광원장치.
  10. 제3항에 있어서, 반도체 레이저의 활성층에 인접된 도파층이, TF파의 굴절율이 TM파의 굴절율과 다르도록 단면형태에 기인한 비등방성 특성을 갖는 것을 특징으로 하는 레이저 광원장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8405900A 1983-09-26 1984-09-26 Laser light source device KR890003390B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP58-177233 1983-09-26
JP17722783A JPH0249667B2 (ja) 1983-09-26 1983-09-26 Jikikogakusochi
JP17723383A JPS6068684A (ja) 1983-09-26 1983-09-26 レ−ザ光源装置
JP58-177227 1983-09-26

Publications (2)

Publication Number Publication Date
KR850002611A true KR850002611A (ko) 1985-05-15
KR890003390B1 KR890003390B1 (en) 1989-09-19

Family

ID=26497847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8405900A KR890003390B1 (en) 1983-09-26 1984-09-26 Laser light source device

Country Status (5)

Country Link
US (1) US4637027A (ko)
EP (1) EP0138452B1 (ko)
KR (1) KR890003390B1 (ko)
CA (1) CA1251846A (ko)
DE (1) DE3483766D1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100815483B1 (ko) * 2007-05-09 2008-03-20 한국전기연구원 비등방성 레이저 결정을 이용한 다이오드 펌핑된 레이저장치

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US4944592A (en) * 1987-10-16 1990-07-31 The University Of Texas System Device and method for quantum nondemolition measurements using parametric oscillation
EP0312296A3 (en) * 1987-10-16 1990-04-11 Board Of Regents, The University Of Texas System Device and method for quantum nondemolition measurements using parametric oscillation
CA1322599C (en) * 1988-01-13 1993-09-28 Nobuhiro Fukushima Floating type magneto-optic disk reading head system having external semiconductor laser resonator operating at orthogonal two mode oscillations
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US5007060A (en) * 1989-08-01 1991-04-09 Litton Systems, Inc. Linear laser with two-swept frequencies of controlled splitting
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JP3667827B2 (ja) * 1995-08-29 2005-07-06 富士通株式会社 ファラデー回転子
JP3739471B2 (ja) 1996-03-01 2006-01-25 富士通株式会社 光可変減衰器
JP3773601B2 (ja) * 1996-09-18 2006-05-10 富士通株式会社 ファラデー回転子
JPH10161076A (ja) * 1996-11-29 1998-06-19 Fujitsu Ltd 磁気光学効果を利用した光デバイス
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US6496300B2 (en) 1998-02-27 2002-12-17 Fujitsu Limited Optical amplifier
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100815483B1 (ko) * 2007-05-09 2008-03-20 한국전기연구원 비등방성 레이저 결정을 이용한 다이오드 펌핑된 레이저장치

Also Published As

Publication number Publication date
KR890003390B1 (en) 1989-09-19
EP0138452A2 (en) 1985-04-24
US4637027A (en) 1987-01-13
CA1251846A (en) 1989-03-28
DE3483766D1 (de) 1991-01-31
EP0138452B1 (en) 1990-12-19
EP0138452A3 (en) 1987-04-29

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