KR840003878A - 연자성 기판의 반응이온 식각법 - Google Patents

연자성 기판의 반응이온 식각법 Download PDF

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Publication number
KR840003878A
KR840003878A KR1019830000515A KR830000515A KR840003878A KR 840003878 A KR840003878 A KR 840003878A KR 1019830000515 A KR1019830000515 A KR 1019830000515A KR 830000515 A KR830000515 A KR 830000515A KR 840003878 A KR840003878 A KR 840003878A
Authority
KR
South Korea
Prior art keywords
ion etching
etching process
ferrite
soft magnetic
mask
Prior art date
Application number
KR1019830000515A
Other languages
English (en)
Other versions
KR880001199B1 (ko
Inventor
빌렘 브릴(외1) 디즈스
Original Assignee
디. 제이. 싹커스
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디. 제이. 싹커스, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 디. 제이. 싹커스
Publication of KR840003878A publication Critical patent/KR840003878A/ko
Application granted granted Critical
Publication of KR880001199B1 publication Critical patent/KR880001199B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/193—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features the pole pieces being ferrite or other magnetic particles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Magnetic Heads (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Soft Magnetic Materials (AREA)
  • Hard Magnetic Materials (AREA)
  • Magnetic Record Carriers (AREA)
  • Detergent Compositions (AREA)

Abstract

내용 없음

Description

연자성 기판의 반응이온 식각법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 부착된 두개의 페라이트 코어 블록의 정면도,
제2도는 제1도의 선Ⅱ-Ⅲ를 따라 절취한 횡단면도,
제3도는 제1 및 2도의 조립체를 적당히 절단함으로써 얻어진 자기 헤드의 개략도,
제4 및 6도는 반응 이온 식각법을 상당히 확대된 크기로 선도식으로 도시한 도면.
제6도는 본 발명에 따른 반응이온 식각 공정용 장치를 선도식으로 도시한 도면.

Claims (8)

  1. 페라이트, Ni-Fe합금 및 합금으로 이루어진 군에서 선택된 연자성의 철 함유물질로 된 기판에 흠을 뚫는 방법에 있어서, 염소함유 혹은 붕소함유 플라즈마 내에서 반응이온 식각 공정을 통해서 홈이 형성되고 식각되지 않을 영역은 연자성의 철함유 물질보다 실질적으로 더 신속하게 식가되지 않는 무기체의 마스크로 덮여지느 것을 특징으로 하는 연자성 기판반응 이온 식각법.
  2. 제1항에 있어서, 식각 공정에 앞서 Mn-Zn 철함유 페라이트 혹은 Ni-Zn 페라이트 기판에 Ni, Ni 및 Fe 합금 및 Al로 구성 된물질의 군에서 선택된 물질로된 마스크가 제공되는 것을 특징으로 하는 방법.
  3. 제2항에 있어서, 각각 Ni와 Ni, Fe의 합금이 래커 패턴을 통하여 전자증착에 의해 몸체상에 성장되는 것을 특징으로 하는 방법.
  4. 제1항에 있어서, 기판이 Mn-Zn 철함유 페라이트 혹은 Ni-Zn 페라이트로 구성되며, 식각공정에 앞서 Al2O3의 마스크로 덮여지는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, Al2O3마스크가 반응이온 식각공정을 통해 Al2O3층에서 일정한 패턴을 이름으로써 형성되는 것을 특징으로 하는 방법.
  6. 앞의 어느 한 항에 있어서, 반응 이온 식각공정이 0.5 내지 2.5의 전력으로 실행되는 것을 특징으로 하는 방법.
  7. 제1 또는 6항에 있어서, 반응 이온 식각공정에 10-2Torr 범위의 부분압력을 갖는 염소함유 혹은 붕소함유 플라주마에서 실행되는 것을 특징으로 하는 방법.
  8. 제1항에 따른 연장성의 철함유물질로 된 몸체에 홈을 뚫는 방법에 있어서, 제4,5 및 6도를 참조하여 위에서 설명한 바와 같은 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830000515A 1982-02-12 1983-02-09 연자성 기판의 반응 이온 식각법 KR880001199B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL8200532A NL8200532A (nl) 1982-02-12 1982-02-12 Reactief ionen etsen van een voorwerp van ferriet.
NL8200532 1982-02-12
NL532 1982-02-12

Publications (2)

Publication Number Publication Date
KR840003878A true KR840003878A (ko) 1984-10-04
KR880001199B1 KR880001199B1 (ko) 1988-07-02

Family

ID=19839245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830000515A KR880001199B1 (ko) 1982-02-12 1983-02-09 연자성 기판의 반응 이온 식각법

Country Status (7)

Country Link
US (1) US4439294A (ko)
JP (1) JPS58147124A (ko)
KR (1) KR880001199B1 (ko)
DE (1) DE3304561A1 (ko)
GB (1) GB2114513B (ko)
IT (1) IT1171055B (ko)
NL (1) NL8200532A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061769B2 (ja) * 1983-08-10 1994-01-05 株式会社日立製作所 アルミナ膜のパターニング方法
US4668366A (en) * 1984-08-02 1987-05-26 The Perkin-Elmer Corporation Optical figuring by plasma assisted chemical transport and etching apparatus therefor
JPH0727611B2 (ja) * 1988-03-09 1995-03-29 日本碍子株式会社 磁気ヘッド用コアの製造方法
JPH0719347B2 (ja) * 1988-09-24 1995-03-06 日本碍子株式会社 固定磁気ディスク装置用コアスライダの製造法
US5582924A (en) * 1989-01-09 1996-12-10 Esselte Meto International Gmbh Magnetic materials for security applications
US5368948A (en) * 1989-01-09 1994-11-29 Esselte Meto International Produktions Magnetic materials for security applications
US4982065A (en) * 1989-03-07 1991-01-01 Ngk Insulators, Ltd. Method of producing a core for magnetic head
JP2757546B2 (ja) * 1990-08-27 1998-05-25 日本電気株式会社 Ｆｅを含む物質のエッチング方法およびエッチング装置
US5607599A (en) * 1994-11-17 1997-03-04 Kabushiki Kaisha Toshiba Method of processing a magnetic thin film
DE19820754C2 (de) * 1998-05-08 2001-08-30 Guenter Seidl Verfahren zum Erzeugen einer Struktur auf einem Substrat
US6821907B2 (en) * 2002-03-06 2004-11-23 Applied Materials Inc Etching methods for a magnetic memory cell stack
US6911346B2 (en) * 2002-04-03 2005-06-28 Applied Materials, Inc. Method of etching a magnetic material
US6884730B2 (en) * 2002-07-02 2005-04-26 Headway Technologies, Inc. Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head
US7377025B2 (en) * 2004-10-29 2008-05-27 Headway Technologies, Inc. Method of forming an improved AP1 layer for a TMR device
KR20200019973A (ko) * 2017-06-23 2020-02-25 메르크 파텐트 게엠베하 고전압 직류 송전 케이블용 케이블 피팅
KR102022431B1 (ko) * 2018-05-29 2019-11-25 엘지이노텍 주식회사 자성시트 및 이를 포함하는 무선전력모듈

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016062A (en) * 1975-09-11 1977-04-05 International Business Machines Corporation Method of forming a serrated surface topography
NL7608002A (nl) * 1976-07-20 1978-01-24 Philips Nv Werkwijze ter vervaardiging van een magnetische inrichting.
US4226691A (en) * 1978-11-24 1980-10-07 National Semiconductor Corporation Bubble memory process using an aluminum plus water chemical reaction
US4295924A (en) * 1979-12-17 1981-10-20 International Business Machines Corporation Method for providing self-aligned conductor in a V-groove device
US4299680A (en) * 1979-12-31 1981-11-10 Texas Instruments Incorporated Method of fabricating magnetic bubble memory device having planar overlay pattern of magnetically soft material
US4375390A (en) * 1982-03-15 1983-03-01 Anderson Nathaniel C Thin film techniques for fabricating narrow track ferrite heads

Also Published As

Publication number Publication date
DE3304561A1 (de) 1983-08-25
IT8319496A0 (it) 1983-02-09
GB8303545D0 (en) 1983-03-16
JPS58147124A (ja) 1983-09-01
US4439294A (en) 1984-03-27
GB2114513B (en) 1985-08-14
KR880001199B1 (ko) 1988-07-02
DE3304561C2 (ko) 1990-10-11
JPH0252841B2 (ko) 1990-11-14
GB2114513A (en) 1983-08-24
IT1171055B (it) 1987-06-10
NL8200532A (nl) 1983-09-01
IT8319496A1 (it) 1984-08-09

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