KR840002468B1 - 실리콘 함유층의 제조 공정 - Google Patents

실리콘 함유층의 제조 공정 Download PDF

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Publication number
KR840002468B1
KR840002468B1 KR1019810002272A KR810002272A KR840002468B1 KR 840002468 B1 KR840002468 B1 KR 840002468B1 KR 1019810002272 A KR1019810002272 A KR 1019810002272A KR 810002272 A KR810002272 A KR 810002272A KR 840002468 B1 KR840002468 B1 KR 840002468B1
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KR
South Korea
Prior art keywords
layer
silicon
temperature
deposition
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019810002272A
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English (en)
Korean (ko)
Other versions
KR830006827A (ko
Inventor
카쁘랑 다니엘
랭도르 피에르
끄립톤 에릭
Original Assignee
똥송쎄 에스에프
재끄 보와르
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 똥송쎄 에스에프, 재끄 보와르 filed Critical 똥송쎄 에스에프
Publication of KR830006827A publication Critical patent/KR830006827A/ko
Application granted granted Critical
Publication of KR840002468B1 publication Critical patent/KR840002468B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019810002272A 1980-06-24 1981-06-23 실리콘 함유층의 제조 공정 Expired KR840002468B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR80.13968 1980-06-24
FR8013968A FR2485810A1 (fr) 1980-06-24 1980-06-24 Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
FR80-13968 1980-06-24

Publications (2)

Publication Number Publication Date
KR830006827A KR830006827A (ko) 1983-10-06
KR840002468B1 true KR840002468B1 (ko) 1984-12-29

Family

ID=9243446

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810002272A Expired KR840002468B1 (ko) 1980-06-24 1981-06-23 실리콘 함유층의 제조 공정

Country Status (6)

Country Link
US (1) US4344984A (cg-RX-API-DMAC7.html)
EP (1) EP0042773B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5731182A (cg-RX-API-DMAC7.html)
KR (1) KR840002468B1 (cg-RX-API-DMAC7.html)
DE (1) DE3160193D1 (cg-RX-API-DMAC7.html)
FR (1) FR2485810A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4690830A (en) * 1986-02-18 1987-09-01 Solarex Corporation Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
KR20010053459A (ko) * 1998-07-09 2001-06-25 조셉 제이. 스위니 비정질 및 다결정 실리콘 게르마늄 합금 박막 형성 방법및 장치
GB2442198B (en) * 2006-09-29 2011-06-29 Alan Frederick Sandy Toilet Device
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Also Published As

Publication number Publication date
EP0042773A1 (fr) 1981-12-30
US4344984A (en) 1982-08-17
FR2485810B1 (cg-RX-API-DMAC7.html) 1984-01-13
DE3160193D1 (en) 1983-05-26
KR830006827A (ko) 1983-10-06
JPS5731182A (en) 1982-02-19
EP0042773B1 (fr) 1983-04-20
FR2485810A1 (fr) 1981-12-31

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