KR830008405A - Method and apparatus for producing amorphous germanium alloy with photoreaction characteristics - Google Patents

Method and apparatus for producing amorphous germanium alloy with photoreaction characteristics Download PDF

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KR830008405A
KR830008405A KR1019810003327A KR810003327A KR830008405A KR 830008405 A KR830008405 A KR 830008405A KR 1019810003327 A KR1019810003327 A KR 1019810003327A KR 810003327 A KR810003327 A KR 810003327A KR 830008405 A KR830008405 A KR 830008405A
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alloy
component
injected
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density
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KR900005566B1 (en
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오브신스키 스탠포드
이주 마사추구
캐넬라 빈센트
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오브신스키 스탠포드
에너지 컨버션 디바이시즈, 인코포레이티드
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Abstract

내용 없음No content

Description

광반응 특성을 지니는 비결정 게르마늄 합금을 제조하는 방법과 장치Method and apparatus for producing amorphous germanium alloy with photoreaction characteristics

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 활성불소를 이전에 석출된 게르마늄 비결정 합금속에 확산하는 실시장치를 도시하는 도면5 shows an embodiment for diffusing activated fluorine into a previously deposited germanium amorphous alloy.

제6도는 본 발명의 방법에 의해서 제조된 게르마늄 비결정 반도체 광수입 합금의 한 실시를 도시하도록 쇼트키 장벽 태양전지의 실시예의 부분 단면도.6 is a partial cross-sectional view of an embodiment of a Schottky barrier solar cell to illustrate one implementation of a germanium amorphous semiconductor light import alloy made by the method of the present invention.

제7도는 본 발명의 방법에 의해서 제조된 도우핑 게르마늄 비결정 반도체합금을 지니는 p-n 접합 태양전지 장치의 부분 단면도.7 is a partial cross-sectional view of a p-n junction solar cell device having a doped germanium amorphous semiconductor alloy produced by the method of the present invention.

제8도는 본 발명의 방법에 의해서 제조된 비결정 게르마늄반도체합금을 지니는 광검출장치의 부분단면도.8 is a partial cross-sectional view of a photodetecting device having an amorphous germanium semiconductor alloy produced by the method of the present invention.

제9도는 본 발명의 방법에 의해서 제조된 비결정 게르마늄 반도체합금을 지니는 제록스식드럼의 부분 단면도.9 is a partial cross-sectional view of a xerox drum having an amorphous germanium semiconductor alloy produced by the method of the present invention.

제10도는 p-i-n 접합포양전지장치의 부분 단면도.10 is a partial cross-sectional view of a p-i-n junction battery device.

제11도는 n-i-p 접합태양전지장치의 부분단면도.11 is a partial cross-sectional view of an n-i-p junction solar cell device.

제12도는 게르마늄 비결정합금을 석출하는 플라즈마 활성증기 석출장치와 이와 결합되는 본 발명의 조절 요소부를 도시하는 도면.12 shows a plasma activated vapor deposition apparatus for depositing a germanium amorphous alloy and a control element portion of the present invention coupled thereto.

Claims (39)

적어도 게느마늄을 지니는 재료를 기질위에 석출시키는 방법에 있어서, 사이재료속에 적어도 하나의 밀도의 상태 감소성분을 결합시키며 상기 성분은 불소인 것을 특징으로 하는 개선된 광반응 비결정합금을 제조하는 방법.A method of depositing at least a germanium-containing material on a substrate, the method comprising the steps of: incorporating at least one density-reducing component in a interstitial material, said component being fluorine. 특수한 광반을 파장기능을 위해 조절되는 밴드간격을 지니는 합금을 생성하도록 밴드간격의 상태를 증가시키기 않고 적어도 하나의 밴드간격 조절성분을 상기 재료속에 주입시키는 과정을 지니는 것을 특징으로 하는 제1항의 방법.The method of claim 1, comprising injecting at least one band spacing control component into the material without increasing the state of the band spacing to produce an alloy having a band spacing controlled for the wavelength function of the special light spot. 상기 조절성분이 탄소 또는 질소인 1항내지 2항의 방법.The method of claim 1, wherein the control component is carbon or nitrogen. 상기 합금이 H2및 GeF4의 혼합물로부터 글로우방전 석출되는 것을 특징으로 1항 또는 3항중 어느 것의 방법.The method according to any one of claims 1 to 3, wherein the alloy precipitates a glow discharge from a mixture of H 2 and GeF 4 . 상기 혼합물이 10%이상의 F2를 지니는 것을 특징으로 하는 제4항의 방법.The method of claim 4, wherein the mixture has at least 10% of F 2 . GeF4및 의 혼합물이 4대 1내지 10대 1의 비율을 지니는 것을 특징으로 하는 4항 또는 5항의 방법.The method of claim 4 or 5, wherein the mixture of GeF 4 and has a ratio of 4 to 1 to 10: 1. 상기 합금이 활성광반응 영역을 지니며 석출되고 상기 조절성분이 사이영역속으로 주입되는 것을 특징으로 하는 2항 6항중 어느 것의 방법.The method according to any one of claims 2 to 6, wherein the alloy has an active photoreaction zone to be precipitated and the control component is injected into the interstitial zone. 제2인 밀도의 상태 감소성분을 주입시키며 상기 제2의 성분이 수소인 것을 특징으로 하는 1항내지 7항중 어느 것의 방법.The method of any one of claims 1 to 7, wherein a state reducing component of a second density is injected and the second component is hydrogen. 상기 2개의 밀도의 상태 감소 성분이 상기 석출합금속에 동시에 결합되는 것을 특징으로 하는 8항의 방법.The method of claim 8, wherein said two density reducing components are simultaneously bonded to said precipitated metal. 상기 감소성분이 석출후에 상기 합금속으로 결합되는 것을 특징으로 하는 1항내지 9항중 어느 것의 방법.The method according to any one of claims 1 to 9, wherein the reducing component is bonded into the alloy after precipitation. 상기 조절성분이 불연속층속의 상기 합금속으로 주입되는 것을 특징으로 하는 2항 내지 10항중 어느 것의 방법.The method according to any one of claims 2 to 10, wherein the adjusting component is injected into the alloy flux of the discontinuous layer. 상기 조절성분이 상기 합금속에 변화양으로 주입되는 것을 특징으로 하는 1항내지 10항중 어느 것의 방법.The method according to any one of claims 1 to 10, wherein the control component is injected into the alloy in varying amounts. 상기 조절성분이 상기 합금속에 주입되기전에 증발시키는 것을 특징으로 하는 2항 내지 12항중 어느 것의 방법.The method according to any one of claims 2 to 12, wherein the modulating component is evaporated before being injected into the alloy. 상기 조절성분의 상기 합금속에 주입될때 플라즈마 활성화되는 것을 특징으로 하는 2항 내지 13항중 어느 것의 방법.The method of any one of claims 2 to 13, wherein the control component is plasma activated when injected into the alloy. 상기 조절성분이 상기 합금속에 주입될때 플라즈마 활성증기석출에 의해서 활성화되는 것을 특징으로 하는 2항내지 14항중 어느 것의 방법.The method according to any of claims 2 to 14, wherein the regulating component is activated by plasma activated vapor deposition when injected into the alloy. p 또는 n전도형 합금을 형성하도록 하나의 p 또는 n도우판트성분으로 상기 합금의 일부분을 석출시키는 것을 특징으로 하는 1항 내지 15항중 어느 것의 방법.The method of any of claims 1 to 15, wherein a portion of the alloy is precipitated with one p or n dopant component to form a p or n conductive alloy. 1항 내지 16항중 어느 방법에 의해 제조된 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)을 특징으로 하는 비결정합금.An amorphous alloy characterized by an alloy (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) prepared by any one of claims 1-16. 상기 합금이 상기 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)속에 적어도 하나의 밀도의 상태 감소성분을 결합시키는 것을 특징으로 하는게르마늄을 지니는 개선된 광반응 비결정성합금.18. The improved photoreactive amorphous alloy having germanium, wherein the alloy binds at least one density reducing state into the alloy (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220). 간견속에 상태를 증가시키지 않고 그속에 결합된 밴드간격 조절 성분을 지니며, 상기 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)이 특수한 광반응 파장기능을 위해서 조절되는 밴드간격을 지니는 것을 특징으로 하는 18항의 합금.18. The alloy of claim 18, wherein the alloy (118, 146, 148, 168, 170, 172, 174, 176, 180, 194, 206, 208, 210, 214, 216, 218, 220) has a band spacing control element coupled therein without increasing the state in the spot. 상기 조절성분이 탄소 또는 질소인 것을 특징으로 하는 19항의 합금.The alloy of claim 19, wherein the adjusting component is carbon or nitrogen. 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)이 활성광반응 영역(150,170,172,180,186,194,208,216)을 지니고 상기 절성분이 적어도 상기 영역속에 포함되는 것을 특징으로 하는 19항 또는 20항의 합금.The alloy of claim 19 or 20, wherein the alloy (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) has an active photoreaction zone (150,170,172,180,186,194,208,216) and the cutout is contained in at least the zone. 제2의 밀도의 상태 감소성분이 수소인 것을 특징으로 하는 18항내지 21항중 어느 것의 합금.The alloy according to any one of claims 18 to 21, wherein the state reducing component of the second density is hydrogen. 상기 합금이 글로우방전석출에 의해서 석출되는 것을 특징으로 하는 19항 내지 23항중 어느 것의 합금.The alloy according to any one of claims 19 to 23, wherein the alloy is precipitated by glow discharge precipitation. 불연속층속에서 사이조절성분을 지니는 것을 특징으로 하는 19항내지 23항중어느 것의 합금.The alloy of any of 19-23 characterized by having an intermodulatory component in the discontinuous layer. 변화된 양의 상기 조절성분을 지니는 것을 특징으로 하는 19항내지 24항중 어느 것의 합금.The alloy of any of claims 19 to 24, wherein the alloy has a varying amount of the control component. 전하 반송파를 발생시키도록 방사능이 충돌하는 밴드간격을 지니는 활성 광반응영역을 지니는 비결정게르마늄 반도체 합금물체를 지니는 여러가지 재료의 적재층을 지니는 개선된 광반응장치에 있어서 상기 게르마늄 비결정합금이 불소인 적어도 하나의 밀도의 상태감소 성분을 지니는 것을 특징으로 하는 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)At least one of the germanium amorphous alloys is fluorine in an improved photoreaction device having a loading layer of various materials having an amorphous germanium semiconductor alloy object having an active photoreaction region having band gaps where radioactivity impinges on generating a charge carrier. Alloys characterized by having a state-reducing component of density (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) 간격속의 상태를 증가시키지 않고 그 방사능 흡수를 증진시키도록 적어도 상기 광반응 영역(150,170,172,180,186,19|4,208,216)속의 밴드간격 조절성분을 지니며 상기 합금(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)의 밴드간격이 특수한광반응 파장기능을 위해 조절되는 것을 특징으로하는 26항의 개선된 광반응장치.The band gap of the alloy (118, 146, 148, 168, 170, 172, 174, 176, 180, 194, 206, 208, 210, 214, 216, 218, 220) has a band spacing control component in the photoreactive region 150, 170, 172, 180, 186, 19 | 4, 208, 216 to increase its radiation absorption without increasing the state of the gap. 26. The improved photoreaction device of claim 26, characterized in that it is controlled. 상기 조절성분인 것을 특징으로 하는 27항의 장치.The device of claim 27, wherein said control component. 제2의 밀도의 상태 감소성분이 수소인 것을 특징으로 하는 26항내지 28항중 어느 것의 장치.The device of any of claims 26-28, wherein the state reducing component of the second density is hydrogen. 상기 합금이 글로우 방전석출에 의해서 석출되는 것을 특징으로 하는 26항내지 29항중 어느 것의 장치.The apparatus according to any one of claims 26 to 29, wherein the alloy is deposited by glow discharge precipitation. 상기 합금 몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 불연속층속에 상기 조절성분을 지니는 것을 특징으로 하는 27항 내지 30항중 어느 것의 장치.The device of any of claims 27 to 30, wherein the alloy body (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) has the regulating component in a discontinuous layer. 상기 합금몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,216,218,220)가 변화된 양의상기 조절성분을 지니는 것을 특징으로 하는 27항내지 31항중 어느 것의 장치.The device of any of claims 27 to 31, wherein the alloy body (118,146,148,168,170,172,174,176,180,194,206,208,210,216,218,220) has a varying amount of the regulating component. 상기 합금 몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 적어도n(148,170,176,206,218,220)또는 p(172,174,194,210,214) 전도영역 중 하나를 지니고 상기 영역이 n 또는 p도우판트 성분을 지니는 것을 특징으로 하는 18항내지 32항중 어느 것의 장치.18. An apparatus according to claim 32, wherein the alloy body (118, 146, 148, 168, 170, 172, 174, 176, 180, 194, 206, 208, 210, 214, 216, 218, 220) has at least n (148, 170, 176, 206, 218, 220) or p (172, 174, 194, 210, 214) conductive areas, and wherein the area has an n or p dopant component. 상기 합금 몸체(118,146,148,168,170,172,174,176,180,206,208,210,214,216,218,220)가 쇼트키 장벽 태양전지(142)의 일부분을 형성하는 것을 특징으로 하는 26항 내지 33항중 어느 것의 장치.The device of any of claims 26-33, wherein the alloy body (118,146,148,168,170,172,174,176,180,206,208,210,214,216,218,220) forms part of a Schottky barrier solar cell (142). 상기 합금몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 MIS태양전지 (142)의 일부를 형성하는 것을 특징으로 하는 26항내지 33항중 어느 것의 장치.The device of any of claims 26 to 33, wherein the alloy bodies (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) form part of a MIS solar cell (142). 상기 합금 몸체(118,146,148,168,170,172,174,176,180,184,206,208,210,214,216,218,220)가 p-n접합장치(168)의 일부를 형성하는 것을 특징으로 하는 26항 내지 33항중 어느 것의 장치.The device of any of claims 26 to 33, wherein the alloy body (118,146,148,168,170,172,174,176,180,184,206,208,210,214,216,218,220) forms part of a p-n junction device (168). 상기 합금 몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 p-i-n장치 (198,212)의 일부를 형성하는 것을 특징으로 하는 26항 내지 33항중 어느 것의 장치.The device of any of claims 26-33, wherein the alloy body (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) forms part of a p-i-n device (198,212). 상기 합금 몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 광검출기(178)의 일부를 형성하는 것을 특징으로 하는 26항 내지 33항중 어느 것의 장치.The device of any of claims 26 to 33, wherein the alloy body (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) forms part of a photodetector (178). 상기 합금몸체(118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220)가 정전지상 발생장치(192)의 일부를 형성하는 것을 특징으로 하는 26항 내지 33항중 어느 것의 장치.The apparatus of any of claims 26 to 33, wherein the alloy bodies (118,146,148,168,170,172,174,176,180,194,206,208,210,214,216,218,220) form part of an electrostatic phase generating device (192). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
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