KR20250051081A - 플라스마 처리 장치 및 온도 측정 방법 - Google Patents

플라스마 처리 장치 및 온도 측정 방법 Download PDF

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Publication number
KR20250051081A
KR20250051081A KR1020257008847A KR20257008847A KR20250051081A KR 20250051081 A KR20250051081 A KR 20250051081A KR 1020257008847 A KR1020257008847 A KR 1020257008847A KR 20257008847 A KR20257008847 A KR 20257008847A KR 20250051081 A KR20250051081 A KR 20250051081A
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KR
South Korea
Prior art keywords
temperature sensor
temperature
electrode layer
switch
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257008847A
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English (en)
Korean (ko)
Inventor
가즈히토 야마다
신야 다모노키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250051081A publication Critical patent/KR20250051081A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/08—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values
    • G01K3/10—Thermometers giving results other than momentary value of temperature giving differences of values; giving differentiated values in respect of time, e.g. reacting only to a quick change of temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/67248—
    • H01L21/6831—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020257008847A 2022-08-29 2023-08-16 플라스마 처리 장치 및 온도 측정 방법 Pending KR20250051081A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-135651 2022-08-29
JP2022135651 2022-08-29
PCT/JP2023/029549 WO2024048273A1 (ja) 2022-08-29 2023-08-16 プラズマ処理装置、及び温度測定方法

Publications (1)

Publication Number Publication Date
KR20250051081A true KR20250051081A (ko) 2025-04-16

Family

ID=90099424

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257008847A Pending KR20250051081A (ko) 2022-08-29 2023-08-16 플라스마 처리 장치 및 온도 측정 방법

Country Status (6)

Country Link
US (1) US20250201601A1 (https=)
JP (1) JPWO2024048273A1 (https=)
KR (1) KR20250051081A (https=)
CN (1) CN119744437A (https=)
TW (1) TW202425056A (https=)
WO (1) WO2024048273A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120190758B (zh) * 2025-04-23 2025-12-05 北京易感芯科技有限公司 磨抛样片载具及磨抛设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170167790A1 (en) 2015-12-11 2017-06-15 Lam Research Corporation Multi-plane heater for semiconductor substrate support
JP2020009795A (ja) 2018-07-03 2020-01-16 東京エレクトロン株式会社 基板処理システムおよび基板処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090015207A (ko) * 2007-08-08 2009-02-12 삼성전자주식회사 잉크젯 화상형성장치 및 그 제어방법
JP2012042428A (ja) * 2010-08-23 2012-03-01 Toshiba Corp 温度検出回路
AU2012301903B2 (en) * 2011-08-30 2015-07-09 Watlow Electric Manufacturing Company High definition heater system having a fluid medium
JP2020118560A (ja) * 2019-01-24 2020-08-06 日立オートモティブシステムズ株式会社 温度監視装置
JP2020168829A (ja) * 2019-04-05 2020-10-15 キヤノン株式会社 記録装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170167790A1 (en) 2015-12-11 2017-06-15 Lam Research Corporation Multi-plane heater for semiconductor substrate support
JP2020009795A (ja) 2018-07-03 2020-01-16 東京エレクトロン株式会社 基板処理システムおよび基板処理方法

Also Published As

Publication number Publication date
JPWO2024048273A1 (https=) 2024-03-07
WO2024048273A1 (ja) 2024-03-07
US20250201601A1 (en) 2025-06-19
CN119744437A (zh) 2025-04-01
TW202425056A (zh) 2024-06-16

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P22-X000 Classification modified

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