KR20250019055A - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

Info

Publication number
KR20250019055A
KR20250019055A KR1020247041557A KR20247041557A KR20250019055A KR 20250019055 A KR20250019055 A KR 20250019055A KR 1020247041557 A KR1020247041557 A KR 1020247041557A KR 20247041557 A KR20247041557 A KR 20247041557A KR 20250019055 A KR20250019055 A KR 20250019055A
Authority
KR
South Korea
Prior art keywords
resistance
processing device
layers
layer
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247041557A
Other languages
English (en)
Korean (ko)
Inventor
다카리 야마모토
가즈히토 야마다
마사노리 다카하시
신야 이시카와
쇼타 에자키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250019055A publication Critical patent/KR20250019055A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H01L21/68785—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/67103—
    • H01L21/67248—
    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020247041557A 2022-05-26 2023-05-18 기판 처리 장치 Pending KR20250019055A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263346205P 2022-05-26 2022-05-26
US63/346,205 2022-05-26
PCT/JP2023/018559 WO2023228853A1 (ja) 2022-05-26 2023-05-18 基板処理装置

Publications (1)

Publication Number Publication Date
KR20250019055A true KR20250019055A (ko) 2025-02-07

Family

ID=88919284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247041557A Pending KR20250019055A (ko) 2022-05-26 2023-05-18 기판 처리 장치

Country Status (6)

Country Link
US (1) US20250087470A1 (https=)
JP (1) JPWO2023228853A1 (https=)
KR (1) KR20250019055A (https=)
CN (1) CN119213547A (https=)
TW (1) TW202412165A (https=)
WO (1) WO2023228853A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7782599B2 (ja) * 2024-02-28 2025-12-09 Toto株式会社 静電チャック

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021163902A (ja) 2020-04-01 2021-10-11 東京エレクトロン株式会社 載置台および基板処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4879060B2 (ja) * 2007-03-26 2012-02-15 日本碍子株式会社 基板加熱装置
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US11508600B2 (en) * 2017-04-10 2022-11-22 Ngk Spark Plug Co., Ltd. Holding device
JP7213656B2 (ja) * 2018-11-05 2023-01-27 日本特殊陶業株式会社 保持装置
WO2020235542A1 (ja) * 2019-05-21 2020-11-26 トーカロ株式会社 温調ユニット
CN118588527A (zh) * 2019-07-25 2024-09-03 朗姆研究公司 衬底处理系统中非均匀性的原位实时感测和补偿
JP7539236B2 (ja) * 2020-02-21 2024-08-23 東京エレクトロン株式会社 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021163902A (ja) 2020-04-01 2021-10-11 東京エレクトロン株式会社 載置台および基板処理装置

Also Published As

Publication number Publication date
JPWO2023228853A1 (https=) 2023-11-30
TW202412165A (zh) 2024-03-16
CN119213547A (zh) 2024-12-27
US20250087470A1 (en) 2025-03-13
WO2023228853A1 (ja) 2023-11-30

Similar Documents

Publication Publication Date Title
US20240087857A1 (en) Plasma processing apparatus and substrate support
KR20250011133A (ko) 플라즈마 처리 장치
KR20250019055A (ko) 기판 처리 장치
KR20240161164A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7735227B2 (ja) プラズマ処理装置
KR20240033673A (ko) 기판 처리 장치
TW202507887A (zh) 噴淋板及基板處理裝置
JP7801192B2 (ja) 基板処理装置
US20240339303A1 (en) Substrate support and plasma processing apparatus
JP7700389B2 (ja) プラズマ処理装置
US12531213B2 (en) Plasma processing apparatus
KR20250134622A (ko) 지지체, 기판 지지기 및 플라즈마 처리 장치
US20250308865A1 (en) Substrate processing apparatus and electrostatic chuck
WO2025089271A1 (ja) 基板支持器及びプラズマ処理装置
TW202604195A (zh) 電漿處理裝置、偏壓電源系統、及電漿處理方法
JP2024115405A (ja) プラズマ処理装置
JP2025064037A (ja) 静電チャック、基板支持器、及びプラズマ処理装置
TW202606015A (zh) 基板支持器、基板處理裝置、及基台
KR20240140866A (ko) 기판 지지기 및 기판 처리 장치
WO2026009713A1 (ja) 基板支持器、基板処理装置、及び基台
JP2026013822A (ja) プラズマ処理装置及び静電チャック
JP2026004103A (ja) プラズマ処理装置及びプラズマ処理方法
JP2024066237A (ja) プラズマ処理装置及びプラズマ処理方法
KR20220121721A (ko) 플라스마 처리 장치 및 기판 지지부
TW202541246A (zh) 基板處理裝置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000