KR20240144432A - 기판의 피처의 변동성을 감소시키기 위한 시스템 및 방법 - Google Patents

기판의 피처의 변동성을 감소시키기 위한 시스템 및 방법 Download PDF

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Publication number
KR20240144432A
KR20240144432A KR1020247030805A KR20247030805A KR20240144432A KR 20240144432 A KR20240144432 A KR 20240144432A KR 1020247030805 A KR1020247030805 A KR 1020247030805A KR 20247030805 A KR20247030805 A KR 20247030805A KR 20240144432 A KR20240144432 A KR 20240144432A
Authority
KR
South Korea
Prior art keywords
signal
states
power level
generator
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247030805A
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English (en)
Korean (ko)
Inventor
스리하르샤 자얀티
제라르도 델가디노
메레트 웡
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20240144432A publication Critical patent/KR20240144432A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020247030805A 2022-02-17 2022-12-22 기판의 피처의 변동성을 감소시키기 위한 시스템 및 방법 Pending KR20240144432A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263311226P 2022-02-17 2022-02-17
US63/311,226 2022-02-17
PCT/US2022/053888 WO2023158491A1 (en) 2022-02-17 2022-12-22 Systems and methods for reducing variability in features of a substrate

Publications (1)

Publication Number Publication Date
KR20240144432A true KR20240144432A (ko) 2024-10-02

Family

ID=87578948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247030805A Pending KR20240144432A (ko) 2022-02-17 2022-12-22 기판의 피처의 변동성을 감소시키기 위한 시스템 및 방법

Country Status (5)

Country Link
US (1) US20250166967A1 (https=)
JP (1) JP2025507374A (https=)
KR (1) KR20240144432A (https=)
CN (1) CN118715590A (https=)
WO (1) WO2023158491A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
JP2023519960A (ja) * 2020-04-06 2023-05-15 ラム リサーチ コーポレーション プラズマシース安定化のための無線周波数パルス開始電力スパイクを制御するための方法およびシステム
JP7588516B2 (ja) * 2020-05-14 2024-11-22 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
CN118715590A (zh) 2024-09-27
US20250166967A1 (en) 2025-05-22
JP2025507374A (ja) 2025-03-18
WO2023158491A1 (en) 2023-08-24

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

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P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000