JP2025507374A - 基板の特徴における変動性を低減するためのシステムおよび方法 - Google Patents

基板の特徴における変動性を低減するためのシステムおよび方法 Download PDF

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Publication number
JP2025507374A
JP2025507374A JP2024547659A JP2024547659A JP2025507374A JP 2025507374 A JP2025507374 A JP 2025507374A JP 2024547659 A JP2024547659 A JP 2024547659A JP 2024547659 A JP2024547659 A JP 2024547659A JP 2025507374 A JP2025507374 A JP 2025507374A
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JP
Japan
Prior art keywords
signal
states
power level
generator
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2024547659A
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English (en)
Japanese (ja)
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JP2025507374A5 (https=
JPWO2023158491A5 (https=
Inventor
ジャヤンティ・シュリハーシャ
デルガディノ・ジェラルド
ウォン・メレット
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Lam Research Corp
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Lam Research Corp
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2025507374A publication Critical patent/JP2025507374A/ja
Publication of JP2025507374A5 publication Critical patent/JP2025507374A5/ja
Publication of JPWO2023158491A5 publication Critical patent/JPWO2023158491A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2024547659A 2022-02-17 2022-12-22 基板の特徴における変動性を低減するためのシステムおよび方法 Pending JP2025507374A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263311226P 2022-02-17 2022-02-17
US63/311,226 2022-02-17
PCT/US2022/053888 WO2023158491A1 (en) 2022-02-17 2022-12-22 Systems and methods for reducing variability in features of a substrate

Publications (3)

Publication Number Publication Date
JP2025507374A true JP2025507374A (ja) 2025-03-18
JP2025507374A5 JP2025507374A5 (https=) 2025-12-22
JPWO2023158491A5 JPWO2023158491A5 (https=) 2025-12-22

Family

ID=87578948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024547659A Pending JP2025507374A (ja) 2022-02-17 2022-12-22 基板の特徴における変動性を低減するためのシステムおよび方法

Country Status (5)

Country Link
US (1) US20250166967A1 (https=)
JP (1) JP2025507374A (https=)
KR (1) KR20240144432A (https=)
CN (1) CN118715590A (https=)
WO (1) WO2023158491A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
JP2023519960A (ja) * 2020-04-06 2023-05-15 ラム リサーチ コーポレーション プラズマシース安定化のための無線周波数パルス開始電力スパイクを制御するための方法およびシステム
JP7588516B2 (ja) * 2020-05-14 2024-11-22 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
WO2023158491A1 (en) 2023-08-24
KR20240144432A (ko) 2024-10-02
US20250166967A1 (en) 2025-05-22
CN118715590A (zh) 2024-09-27

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