CN118715590A - 用于减少衬底特征中的变化性的系统和方法 - Google Patents

用于减少衬底特征中的变化性的系统和方法 Download PDF

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Publication number
CN118715590A
CN118715590A CN202280091964.4A CN202280091964A CN118715590A CN 118715590 A CN118715590 A CN 118715590A CN 202280091964 A CN202280091964 A CN 202280091964A CN 118715590 A CN118715590 A CN 118715590A
Authority
CN
China
Prior art keywords
signal
states
power level
generator
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280091964.4A
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English (en)
Chinese (zh)
Inventor
斯里哈沙·贾扬提
格拉尔多·德尔加迪奥
梅雷特·王
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN118715590A publication Critical patent/CN118715590A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CN202280091964.4A 2022-02-17 2022-12-22 用于减少衬底特征中的变化性的系统和方法 Pending CN118715590A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263311226P 2022-02-17 2022-02-17
US63/311,226 2022-02-17
PCT/US2022/053888 WO2023158491A1 (en) 2022-02-17 2022-12-22 Systems and methods for reducing variability in features of a substrate

Publications (1)

Publication Number Publication Date
CN118715590A true CN118715590A (zh) 2024-09-27

Family

ID=87578948

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280091964.4A Pending CN118715590A (zh) 2022-02-17 2022-12-22 用于减少衬底特征中的变化性的系统和方法

Country Status (5)

Country Link
US (1) US20250166967A1 (https=)
JP (1) JP2025507374A (https=)
KR (1) KR20240144432A (https=)
CN (1) CN118715590A (https=)
WO (1) WO2023158491A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
JP2023519960A (ja) * 2020-04-06 2023-05-15 ラム リサーチ コーポレーション プラズマシース安定化のための無線周波数パルス開始電力スパイクを制御するための方法およびシステム
JP7588516B2 (ja) * 2020-05-14 2024-11-22 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
WO2023158491A1 (en) 2023-08-24
KR20240144432A (ko) 2024-10-02
US20250166967A1 (en) 2025-05-22
JP2025507374A (ja) 2025-03-18

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