KR20240134197A - 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 화합물 - Google Patents

감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 화합물 Download PDF

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KR20240134197A
KR20240134197A KR1020247027144A KR20247027144A KR20240134197A KR 20240134197 A KR20240134197 A KR 20240134197A KR 1020247027144 A KR1020247027144 A KR 1020247027144A KR 20247027144 A KR20247027144 A KR 20247027144A KR 20240134197 A KR20240134197 A KR 20240134197A
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sensitive
atom
preferable
radiation
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Korean (ko)
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미노루 우에무라
마사후미 코지마
아키요시 고토
니시키 후지마키
노부히로 히우라
카즈히로 마루모
타카히로 모리
미치히로 시라카와
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후지필름 가부시키가이샤
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/50Compounds containing any of the groups, X being a hetero atom, Y being any atom
    • C07C311/51Y being a hydrogen or a carbon atom
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
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    • C08F220/283Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F220/10Esters
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    • GPHYSICS
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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    • G03F7/20Exposure; Apparatus therefor
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    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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    • C08F212/02Monomers containing only one unsaturated aliphatic radical
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    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
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    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
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  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020247027144A 2022-02-16 2023-02-01 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 화합물 Ceased KR20240134197A (ko)

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JP2022022485 2022-02-16
JPJP-P-2022-022485 2022-02-16
PCT/JP2023/003132 WO2023157635A1 (ja) 2022-02-16 2023-02-01 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物

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US (1) US20240402601A1 (https=)
EP (1) EP4481493A4 (https=)
JP (1) JPWO2023157635A1 (https=)
KR (1) KR20240134197A (https=)
CN (1) CN118679428A (https=)
TW (1) TW202340141A (https=)
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014194534A (ja) 2013-03-01 2014-10-09 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、電子デバイス、及び、化合物
JP2021165824A (ja) 2020-04-01 2021-10-14 信越化学工業株式会社 レジスト材料及びパターン形成方法

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JP4177952B2 (ja) * 2000-05-22 2008-11-05 富士フイルム株式会社 ポジ型レジスト組成物
JP2011068768A (ja) * 2009-09-25 2011-04-07 Fujifilm Corp 活性放射線硬化型インクジェット用インク組成物、および印刷物成形体の製造方法
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