KR20240125642A - 산화비스무트 함유 박막을 위한 알킬 및 아릴 헤테로렙틱 비스무트 전구체 - Google Patents

산화비스무트 함유 박막을 위한 알킬 및 아릴 헤테로렙틱 비스무트 전구체 Download PDF

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KR20240125642A
KR20240125642A KR1020247024330A KR20247024330A KR20240125642A KR 20240125642 A KR20240125642 A KR 20240125642A KR 1020247024330 A KR1020247024330 A KR 1020247024330A KR 20247024330 A KR20247024330 A KR 20247024330A KR 20240125642 A KR20240125642 A KR 20240125642A
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South Korea
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precursor
group
bismuth
substituted
heteroleptic
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Korean (ko)
Inventor
세르게이 브이 이바노프
마이클 티 사보
제이슨 피 코일
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버슘머트리얼즈 유에스, 엘엘씨
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Publication of KR20240125642A publication Critical patent/KR20240125642A/ko
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/94—Bismuth compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
KR1020247024330A 2021-12-21 2022-12-15 산화비스무트 함유 박막을 위한 알킬 및 아릴 헤테로렙틱 비스무트 전구체 Pending KR20240125642A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163265795P 2021-12-21 2021-12-21
US63/265,795 2021-12-21
PCT/US2022/081630 WO2023122470A1 (en) 2021-12-21 2022-12-15 Precursors for deposition of bismuth-containing films

Publications (1)

Publication Number Publication Date
KR20240125642A true KR20240125642A (ko) 2024-08-19

Family

ID=85036277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247024330A Pending KR20240125642A (ko) 2021-12-21 2022-12-15 산화비스무트 함유 박막을 위한 알킬 및 아릴 헤테로렙틱 비스무트 전구체

Country Status (7)

Country Link
US (1) US20250051378A1 (https=)
EP (1) EP4430054A1 (https=)
JP (1) JP2025500345A (https=)
KR (1) KR20240125642A (https=)
CN (1) CN118647624A (https=)
TW (1) TW202337892A (https=)
WO (1) WO2023122470A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202534085A (zh) * 2023-09-29 2025-09-01 德商馬克專利公司 光阻劑材料之沉積製程
KR20250152024A (ko) * 2024-04-15 2025-10-22 주식회사 유피케미칼 비스무스 전구체 화합물, 이의 제조방법, 및 이를 이용한 비스무스-함유 막의 형성 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902639A (en) 1997-03-31 1999-05-11 Advanced Technology Materials, Inc Method of forming bismuth-containing films by using bismuth amide compounds
KR100721365B1 (ko) * 2003-04-08 2007-05-23 토소가부시키가이샤 신규 비스무트 화합물, 그 제조방법 및 막의 제조방법
US7618681B2 (en) 2003-10-28 2009-11-17 Asm International N.V. Process for producing bismuth-containing oxide films
WO2009059237A2 (en) 2007-10-31 2009-05-07 Advanced Technology Materials, Inc. Novel bismuth precursors for cvd/ald of thin films
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films
DE102016001494A1 (de) * 2015-09-23 2017-03-23 Merck Patent Gmbh Bismutverbindungen enthaltend Perfluoralkylgruppen als Lewis-Säure Katalysatoren
EP3292876A1 (en) * 2016-09-12 2018-03-14 Technische Universität Graz Compounds for use as contrast agents in magnetic resonance imaging
AU2021103847A4 (en) * 2021-07-03 2021-09-09 Keshav Lalit Ameta Bismuthino for biomedicinal application and its analytical synthesis thereof

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Publication number Publication date
WO2023122470A1 (en) 2023-06-29
US20250051378A1 (en) 2025-02-13
CN118647624A (zh) 2024-09-13
EP4430054A1 (en) 2024-09-18
TW202337892A (zh) 2023-10-01
JP2025500345A (ja) 2025-01-09

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