CN118647624A - 用于沉积含铋膜的前体 - Google Patents
用于沉积含铋膜的前体 Download PDFInfo
- Publication number
- CN118647624A CN118647624A CN202280090253.5A CN202280090253A CN118647624A CN 118647624 A CN118647624 A CN 118647624A CN 202280090253 A CN202280090253 A CN 202280090253A CN 118647624 A CN118647624 A CN 118647624A
- Authority
- CN
- China
- Prior art keywords
- precursor
- bismuth
- group
- halogens
- heteroleptic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/94—Bismuth compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163265795P | 2021-12-21 | 2021-12-21 | |
| US63/265,795 | 2021-12-21 | ||
| PCT/US2022/081630 WO2023122470A1 (en) | 2021-12-21 | 2022-12-15 | Precursors for deposition of bismuth-containing films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118647624A true CN118647624A (zh) | 2024-09-13 |
Family
ID=85036277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280090253.5A Pending CN118647624A (zh) | 2021-12-21 | 2022-12-15 | 用于沉积含铋膜的前体 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250051378A1 (https=) |
| EP (1) | EP4430054A1 (https=) |
| JP (1) | JP2025500345A (https=) |
| KR (1) | KR20240125642A (https=) |
| CN (1) | CN118647624A (https=) |
| TW (1) | TW202337892A (https=) |
| WO (1) | WO2023122470A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202534085A (zh) * | 2023-09-29 | 2025-09-01 | 德商馬克專利公司 | 光阻劑材料之沉積製程 |
| KR20250152024A (ko) * | 2024-04-15 | 2025-10-22 | 주식회사 유피케미칼 | 비스무스 전구체 화합물, 이의 제조방법, 및 이를 이용한 비스무스-함유 막의 형성 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5902639A (en) | 1997-03-31 | 1999-05-11 | Advanced Technology Materials, Inc | Method of forming bismuth-containing films by using bismuth amide compounds |
| KR100721365B1 (ko) * | 2003-04-08 | 2007-05-23 | 토소가부시키가이샤 | 신규 비스무트 화합물, 그 제조방법 및 막의 제조방법 |
| US7618681B2 (en) | 2003-10-28 | 2009-11-17 | Asm International N.V. | Process for producing bismuth-containing oxide films |
| WO2009059237A2 (en) | 2007-10-31 | 2009-05-07 | Advanced Technology Materials, Inc. | Novel bismuth precursors for cvd/ald of thin films |
| US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
| DE102016001494A1 (de) * | 2015-09-23 | 2017-03-23 | Merck Patent Gmbh | Bismutverbindungen enthaltend Perfluoralkylgruppen als Lewis-Säure Katalysatoren |
| EP3292876A1 (en) * | 2016-09-12 | 2018-03-14 | Technische Universität Graz | Compounds for use as contrast agents in magnetic resonance imaging |
| AU2021103847A4 (en) * | 2021-07-03 | 2021-09-09 | Keshav Lalit Ameta | Bismuthino for biomedicinal application and its analytical synthesis thereof |
-
2022
- 2022-12-15 US US18/720,937 patent/US20250051378A1/en active Pending
- 2022-12-15 WO PCT/US2022/081630 patent/WO2023122470A1/en not_active Ceased
- 2022-12-15 EP EP22847242.9A patent/EP4430054A1/en active Pending
- 2022-12-15 JP JP2024537376A patent/JP2025500345A/ja active Pending
- 2022-12-15 CN CN202280090253.5A patent/CN118647624A/zh active Pending
- 2022-12-15 KR KR1020247024330A patent/KR20240125642A/ko active Pending
- 2022-12-19 TW TW111148698A patent/TW202337892A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023122470A1 (en) | 2023-06-29 |
| US20250051378A1 (en) | 2025-02-13 |
| EP4430054A1 (en) | 2024-09-18 |
| KR20240125642A (ko) | 2024-08-19 |
| TW202337892A (zh) | 2023-10-01 |
| JP2025500345A (ja) | 2025-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |