KR20240091537A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention relates to a substrate processing device and a substrate processing method, and more specifically, to a substrate processing device and a substrate processing method that can prevent foreign substances such as particles from attaching to the substrate during or after the processing process for the substrate. It's about.

Description

{Substrate processing apparatus and substrate processing method}

The present invention relates to a substrate processing device and a substrate processing method, and more specifically, to a substrate processing device and a substrate processing method that can prevent foreign substances such as particles from attaching to the substrate during or after the processing process for the substrate. It's about.

Generally, a substrate is introduced into a chamber and undergoes various processing processes inside the chamber.

In this case, when the inside of the chamber rises to high pressure while performing a processing process on the substrate, a means to more firmly support the door of the chamber is required.

For example, in the case of a supercritical process using a supercritical fluid, the internal pressure of the chamber increases significantly, so the pressure acting from the inside of the chamber toward the door becomes very large. In this case, a support structure that can more firmly support the door is needed to prevent damage to the door during the processing process for the substrate.

However, particles may be generated due to friction or contact between the door and the above-mentioned support structure during the process for the substrate, and furthermore, when the support structure moves when the process for the substrate is completed, friction or contact between the door and the above-mentioned support structure Particles may be generated by contact. Such particles may attach to the upper surface of the substrate and contaminate the substrate.

In order to solve the above problems, the present invention provides a substrate processing device and substrate processing device that can effectively collect particles that may be generated during a high-pressure process such as a supercritical process for a substrate or after completing a high-pressure process. The purpose is to provide a method.

The object of the present invention as described above is a housing in which a chamber for performing a processing process for a substrate is located, a fan unit provided at the top of the housing to generate a downward airflow inside the housing, and a fan unit provided at the bottom of the housing to generate a downward airflow inside the housing. This is achieved by a substrate processing device that includes an auto damper that opens and closes to exhaust the fluid inside the housing, and a pressure gauge that detects the pressure difference between the inside and outside of the housing.

Here, the pressure gauge may be composed of a first pressure sensor installed inside the housing and a second pressure sensor installed in the exhaust passage outside the housing.

Additionally, the auto damper may be opened when the pressure difference between the inside and outside of the housing detected by the pressure gauge is greater than a preset threshold.

Furthermore, the auto damper may be opened when the fan unit is driven.

Meanwhile, the chamber includes a tray unit that supports the substrate and is capable of being introduced into and out of the chamber through an opening of the chamber, a shutter that presses the tray unit, and the tray unit. It may further include a magnetic material to collect metal particles generated by friction of the shutter.

In this case, when the shutter is lowered after completion of the process for the substrate, a downward airflow is generated by the fan unit to lower the metal particles to the lower part of the substrate rather than the upper part, thereby suppressing the metal particles adsorbed to the substrate. there is.

Meanwhile, the tray unit includes a tray supporting the substrate, and a cover provided at an end of the tray to seal an opening of the chamber, and the magnetic material may be provided on at least one of the cover and the shutter.

Additionally, the magnetic material may include a first magnetic material and a second magnetic material installed on surfaces of the cover and the shutter facing each other.

Furthermore, the first magnetic material and the second magnetic material may be formed of a single magnetic material or a plurality of separate magnetic materials.

Meanwhile, a fixed frame may be provided on the front side of the chamber where the opening is formed and have a frame opening through which the shutter is inserted, and the magnetic material may further include an additional magnetic material installed along an edge of the frame opening.

Furthermore, the magnetic material is composed of an electromagnet, and can release magnetic force periodically or aperiodically and discharge particles by the fan unit.

Meanwhile, the object of the present invention as described above is to provide a fan unit installed in a housing equipped with a chamber for performing a processing process on a substrate, an auto damper installed in the housing, and a device that detects the pressure difference between the inside and outside of the housing. A substrate processing method using a substrate processing apparatus equipped with a pressure gauge, comprising generating a downward airflow inside the housing by driving the fan unit and discharging fluid inside the housing by driving the auto damper. In the substrate processing method, the auto damper is opened when the pressure difference between the inside and outside of the housing detected by the pressure gauge is more than a preset threshold, or when the fan unit is driven. is achieved by

Here, the chamber further includes a movable tray unit that supports the substrate and a shutter that pressurizes the tray unit, and the step of discharging the fluid inside the housing by driving the auto damper is performed after completion of the process for the substrate. When the shutter is lowered, a downward airflow is generated by driving the fan unit, thereby causing metal particles to fall to the lower part of the substrate rather than the upper part, thereby suppressing the metal particles adsorbed to the substrate.

Furthermore, an electromagnet is further provided to collect metal particles generated by friction between the tray unit and the shutter, and the magnetic force of the electromagnet can be released periodically or aperiodically and the particles can be discharged by the fan unit. .

According to the present invention having the above-described configuration, a strong descending airflow is formed by a fan unit inside the housing where the chamber is disposed, thereby suppressing particles, etc. from attaching to the upper surface of the substrate as much as possible.

In addition, according to the present invention, by providing a magnetic material in the chamber, it is possible to effectively collect metal particles that may be generated by movement of the shutter and prevent metal particles from attaching to the upper surface of the substrate.

1 is a side view showing a state in which the shutter of a chamber is raised in a substrate processing apparatus according to an embodiment of the present invention;
Figure 2 is a front perspective view of the chamber;
Figure 3 is a side view showing a state in which the shutter of the chamber is lowered in the substrate processing apparatus according to an embodiment of the present invention;
4 and 5 are side views of a chamber equipped with a magnetic material according to an embodiment,
6 is a side view of a chamber equipped with a magnetic material according to another embodiment;
Figure 7 is a side view of a chamber equipped with a magnetic material according to another embodiment.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

FIG. 1 is a side view of a substrate processing apparatus 1000 according to an embodiment of the present invention, and FIG. 2 is a front perspective view of the chamber 400 disposed inside the housing 100 of the substrate processing apparatus 1000.

Referring to FIGS. 1 and 2, the substrate processing apparatus 1000 includes a housing 100, and a chamber 400 for performing a processing process on a substrate S is disposed inside the housing 100. do.

The chamber 400 provides a processing space 412 within which the substrate S is processed, and a predetermined processing process is performed on the substrate S in the processing space 412.

For example, the chamber 400 may perform a processing process on the substrate S using a fluid in a supercritical state. Here, a fluid in a supercritical state corresponds to a fluid with a phase that is formed when a substance reaches a critical state, that is, a state exceeding the critical temperature and critical pressure. Fluids in this supercritical state have a molecular density close to that of a liquid, but a viscosity close to that of a gas. Therefore, the supercritical fluid has excellent diffusion, penetration, and dissolving power, which is advantageous for chemical reactions. It has almost no surface tension, so it does not apply surface tension to the microstructure, so it not only has excellent drying efficiency during the drying process of semiconductor devices. It can be very useful as it can avoid pattern collapse.

In the present invention, carbon dioxide (CO ₂ ) may be used as the supercritical fluid. Carbon dioxide has a critical temperature of approximately 31.1℃ and a relatively low critical pressure of 7.38Mpa, so it is easy to create a supercritical state, easy to control by adjusting the temperature and pressure, and has the advantage of being inexpensive.

In addition, carbon dioxide is non-toxic, harmless to the human body, and has the characteristics of being non-flammable and inert. Furthermore, carbon dioxide in a supercritical state has a diffusion coefficient that is approximately 10 to 100 times higher than that of water or other organic solvents, so it has excellent permeability, allowing rapid replacement of organic solvents, and has almost no surface tension, making it easy to dry during the drying process. It has properties that are advantageous for use in In addition, it is possible to convert the carbon dioxide used in the drying process into a gaseous state, separate the organic solvent, and reuse it, thus reducing the burden in terms of environmental pollution.

Referring to Figures 1 and 2, the chamber 400 uses a fluid in a supercritical state to treat a substrate S onto which a processing liquid or organic solvent 10 (hereinafter referred to as 'organic solvent') is applied. Treatment processes such as drying process can be performed.

To this end, while supplying the fluid to the chamber 400, the fluid may be pressurized to a critical pressure or higher, and the fluid may be heated to a critical temperature or higher.

Meanwhile, the chamber 400 may have an opening 414 formed on one side, and the inside may be made of a material suitable for processing the high-pressure process on the substrate S.

In addition, the chamber 400 includes a tray unit 430 that supports the substrate S and is capable of being introduced into the chamber 400 and withdrawn from the chamber 400 through the opening 414. ) can be provided.

The tray unit 430 is introduced into the processing space 412 of the chamber 400 through the opening 414, or enters the processing space 412 into the chamber 400 through the opening 414. It can be withdrawn externally.

For example, the tray unit 430 may be composed of a tray 436 supporting the substrate S, and a cover 432 provided at the distal end of the tray 436 to seal the opening 414. You can.

The substrate S may be seated and supported on the upper surface of the tray 436, and the cover 432 may be connected to an end of the tray 436.

When the tray 436 is inserted into the processing space 412 through the opening 414, the cover 432 closes the opening 414. In this case, a sealing member (not shown) may be provided to seal between the cover 432 and the chamber 400.

On the other hand, when a processing process such as a drying process for a substrate is performed using a supercritical fluid, pressurization and depressurization are repeated using a high-pressure fluid of approximately 10 MPa or more inside the chamber, so the cover ( 432), a fairly high pressure is applied toward it. In this case, a shutter 450 may be provided to prevent damage to the cover 432 during the processing process for the substrate S and to firmly support the cover 432.

For example, the chamber 400 may be provided with fixed frames 422 and 426 provided on the front side where the openings 414 are formed, and the fixed frames 422 and 426 have frame openings 423 and 427. can be formed.

The shutter 450 is configured to move up and down, and when the shutter 450 is raised and inserted into the frame openings 423 and 427, the shutter 450 moves up and down. The cover 432 can be supported.

Figure 1 shows a state in which the shutter 450 is raised and inserted into the frame openings 423 and 427 to support the cover 432 for the process on the substrate S, and Figure 3 shows a state where the shutter 450 is raised and inserted into the frame openings 423 and 427 to support the cover 432. The shutter 450 is shown in a lowered state after the process in (S).

1 to 3, the fixed frames 422 and 426 may be composed of a pair, with a first frame 422 located above the opening 414 and a first frame 422 located below the opening 414. It may be composed of a second frame 426. The first frame 422 is firmly connected to the chamber 400 and may be integral with the chamber 400 or may be a separate member.

A first opening 423 and a second opening 427 constituting the frame openings 423 and 427 may be formed in the first frame 422, respectively. Accordingly, when the shutter 450 rises, the shutter 450 is disposed to penetrate the first opening 423 and the second opening 427. In this case, the shutter 450 is supported by the first frame 422 and the second frame 426, allowing the shutter 450 to withstand the pressure acting on the cover 432.

Meanwhile, in the above-described configuration, when a high-pressure process is performed using supercritical fluid inside the chamber 400, the pressure acting on the cover 432 is supported by the shutter 450. Therefore, particles may be generated due to friction or contact between the cover 432 and the shutter 450. In this case, the cover 432 and the shutter 450 may be made of metal that can withstand high pressure, so metal particles may be generated by friction or contact between the cover 432 and the shutter 450.

In addition, when the shutter 450 is lowered as shown in FIG. 3 after completion of the process for the substrate S, the shutter 450 and the cover 432 may rub or contact, and similarly, metal particles may be generated. there is.

These metal particles may be adsorbed to the upper surface of the substrate S while the substrate S is pulled out and transported from the chamber 400, thereby contaminating the substrate S.

The present invention was designed to solve the above-mentioned problems, and the configuration will be discussed in detail below.

For example, the substrate processing apparatus 1000 includes a fan unit 200 provided at the top of the housing 100 to generate a downward airflow inside the housing 100, and a fan unit 200 provided at the bottom of the housing 100. It is equipped with an auto-damper (120, 122) that opens and closes to exhaust the fluid inside the housing (100) and a pressure gauge (320, 340) that detects the pressure difference between the inside and outside of the housing (100). can do.

The housing 100 may provide sufficient installation space 110 inside so that the above-described chamber 400 can be placed.

The housing 100 may have a structure that can be sealed, and an opening (not shown) may be formed to move the chamber 400 to the inside of the housing 100, or to move the chamber 400 to the inside of the housing 100. ) can be moved to the outside. This housing 100 may be composed of a separate structure, or may utilize the space of an existing sealed structure.

Meanwhile, a fan unit 200 may be installed on the upper part of the housing 100. The fan unit 200 has a fan 205 inside, and when the fan 205 is driven, a strong downward air current is formed inside the housing 100.

To this end, a supply passage 210 connected to the fan unit 200 may be provided outside the housing 100.

CDA (Clean Dry Air) is supplied to the fan unit 200 through the supply passage 210, or in some cases, the supply passage 210 is omitted and the housing 100 is supplied to the fan unit 200. ) Outside air may flow in directly.

Meanwhile, when air is supplied to the inside of the housing 100 through the fan unit 200, a filter (not shown) may be further provided to filter out foreign substances that may be contained in the air. The filter may be installed on the above-described supply passage 210, or may be installed in the fan unit 200.

As shown in FIG. 3, when the process on the substrate S is completed in the chamber 400, metal particles, etc. do not attach to the substrate S, but are caused by the downward airflow of the fan unit 200 described above. It moves to the lower part of the installation space 110.

Specifically, when the shutter 450 is lowered after completing the process on the substrate (S), a strong downward air current is generated by the fan unit 200, thereby causing metal particles to fall to the lower part of the substrate (S) than the upper part. This can suppress metal particles adsorbed to the substrate (S).

The configuration of the fan 205 of the above-described fan unit 200 is only shown as an example, and is not limited to the configuration of the fan 205 shown in the drawing and may be modified as appropriate.

Meanwhile, auto dampers 120 and 122 that open and close to exhaust the fluid inside the housing 100 may be installed in the lower part of the housing 100. The auto dampers (120, 122) may be configured to open and close automatically or manually, and when the auto dampers (120, 122) are opened, the fluid inside the housing 100, that is, the air, will be discharged to the outside. You can.

One or more auto dampers 120 and 122 may be installed. For example, as shown in FIGS. 1 and 3, a first auto damper 120 installed below the central portion of the housing 100, and a second auto damper installed below the edge of the housing 100 ( 122). The installation location and number of these auto dampers are explained as an example and may be modified appropriately.

The auto dampers 120 and 122 described above may be connected to the exhaust passages 140, 142 and 144. That is, when the auto dampers 120 and 122 are opened, the fluid inside the housing 100 can be exhausted through the exhaust passages 140, 142, and 144.

The exhaust passages 140, 142, and 144 include a first exhaust passage 142 connected to the first auto damper 120 and a second exhaust passage 144 connected to the second auto damper 122. It can be configured. Additionally, the first exhaust passage 142 and the second exhaust passage 144 may be connected to the main exhaust passage 140. A pumping unit (not shown) may be connected to the main exhaust passage 140 to further strengthen the downward airflow inside the housing 100.

Meanwhile, the substrate processing apparatus 1000 may be provided with pressure gauges 320 and 340 that detect pressure differences between the inside and outside of the housing 100.

When the pressure difference between the inside and outside of the housing 100 detected by the pressure gauges 320 and 340 is greater than or equal to a preset threshold, the auto dampers 120 and 122 may be set to automatically open.

For example, the pressure gauges 320 and 340 are installed in the first pressure sensor 320 installed inside the housing 100 and in the exhaust passages 140, 142 and 144 outside the housing 100. It may be composed of a second pressure sensor 340.

In this case, the first pressure sensor 320 may be disposed inside the housing 100 and spaced apart from the fan unit 200. This is because if the first pressure sensor 320 is placed adjacent to the fan unit 200, the pressure value measured by the first pressure sensor 320 by the fan unit 200 may react sensitively. .

When the fan unit 200 is installed at the top of the housing 100, the first pressure sensor 320 may be installed at the bottom or bottom of the housing 100.

Alternatively, when the above-described auto dampers 120 and 122 are opened, the fluid inside the housing 100 is discharged through the auto dampers 120 and 122, so that the first pressure sensor 320 is connected to the auto dampers 120 and 122. It can be placed adjacent to 122). For example, the first pressure sensor 320 may be placed adjacent to the first auto damper 120 as shown in the drawing.

Meanwhile, the second pressure sensor 340 may be installed in the aforementioned exhaust passages 140, 142, and 144. In order to more accurately detect the internal and external pressure difference of the housing 100, the second pressure sensor 340 is installed adjacent to the housing 100. It can be installed in the exhaust passage (140, 142, 144). Accordingly, the second pressure sensor 340 may be installed on the first exhaust passage 142 or the second exhaust passage 144. In the drawing, the second pressure sensor 340 is shown as installed in the first exhaust passage 142.

When the pressure difference between the inside and outside of the housing 100 detected by the first pressure sensor 320 and the second pressure sensor 340 is more than a preset threshold, the flow path inside the housing 100 is vented. As the need arises, the auto dampers 120 and 122 may be automatically opened.

Alternatively, the auto dampers 120 and 122 may be set to operate when the aforementioned fan unit 200 is driven. When the fan unit 200 is driven, a downward airflow occurs inside the housing 100, so the auto dampers 120 and 122 need to be opened to discharge the fluid inside the housing 100. .

Meanwhile, as described above, since the particles generated by friction between the shutter 450 and the cover 432 of the tray unit 430 are metallic, a magnetic material may be provided to collect these metallic particles.

4 to 5 show an embodiment in which the above-described magnetic materials 510 and 530 are provided in the chamber 400A. FIG. 4 shows a state in which the shutter 450 is lowered, and FIG. 5 shows a state in which the shutter 450 is raised.

Referring to FIGS. 4 and 5 , the magnetic materials 510 and 530 may be provided on at least one of the cover 432 and the shutter 450. When the shutter 450 moves up and down, metal particles are generated due to friction or contact between the shutter 450 and the cover 432, so metal particles are generated on at least one of the cover 432 and the shutter 450. It is desirable.

4 and 5 show that both the cover 432 and the shutter 450 are provided with magnetic materials 510 and 530.

That is, it may be composed of a first magnetic material 510 provided in the cover 432 and a second magnetic material 530 provided in the shutter 450.

In this case, the first magnetic material 510 and the second magnetic material 530 may be installed on the friction surface of the cover 432 and the shutter 450, or on surfaces facing each other. As a result, metal particles that may be generated by friction or contact between the shutter 450 and the cover 432 can be effectively collected.

Additionally, the first magnetic material 510 and the second magnetic material 530 may be formed of a single magnetic material or a plurality of separate magnetic materials.

For example, in order to increase the collection effect of the above-described metal particles, the second magnetic material 530 is disposed below the shutter 450 and the 2-1 magnetic material 532 disposed on the upper part of the shutter 450. It may be composed of the 2-2 magnetic material 534.

When the shutter 450 is raised and inserted into the first opening 423 of the above-described first frame 422 and the second opening 427 of the second frame 426, as shown in FIG. The first magnetic material 510 may be disposed between the heights of the 2-1 magnetic material 532 and the 2-2 magnetic material 534.

In addition, when the shutter 450 rises and is inserted into the first opening 423 of the above-described first frame 422 and the second opening 427 of the second frame 426, the 2-1 magnetic material ( The height of 532 may be located between the cover 432 and the first frame 422. Furthermore, the height of the 2-2 magnetic material 534 may be located between the cover 432 and the second frame 426.

Meanwhile, the first magnetic material 510 and the second magnetic material 530 may have the same polarity or opposite polarity, but are not particularly limited.

Meanwhile, Figure 6 is a side view showing the configuration of the chamber 400B according to another embodiment.

Referring to FIG. 6, in this embodiment, the third magnetic material 610 installed on the cover 432 may be installed on the entire exposed surface of the cover 432, that is, the surface facing the shutter 450. there is.

Likewise, the fourth magnetic material 650 installed on the shutter 450 may be installed on the entire surface facing the cover 432. As a result, the collection effect of the above-described metal particles can be increased.

Figure 7 is a side view showing the configuration of a chamber 400C according to another embodiment.

Referring to FIG. 7, in this embodiment, additional magnetic materials 732 and 734 installed along the edges of the frame openings 423 and 427 may be further provided.

That is, the additional magnetic materials 732 and 734 are the first additional magnetic material 732 installed along the edge of the first opening 423 of the first frame 422 and the second opening of the second frame 426. At least one of the second additional magnetic materials 734 installed along the edge of 427 may be further provided.

The fifth magnetic material 710 installed on the cover 432 is shown to be similar to the first magnetic material 510 of FIG. 4 described above, but is not limited thereto and is similar to the third magnetic material 610 of FIG. 6 described above. It can also have a configuration.

Meanwhile, the sixth magnetic material 750 provided in the shutter 450 may be installed penetrating the shutter 450 as shown in FIG. 7 .

That is, the 6-1st magnetic material 752 and the 6-2nd magnetic material 754 disposed above and below the shutter 450 may be provided to penetrate the shutter 450. This can increase the metal particle collection effect.

Meanwhile, although not shown in the drawings, the above-described magnetic materials 510 and 530 may be composed of electromagnets. In this way, when the magnetic materials 510 and 530 are composed of electromagnets, during or at the end of the process for the substrate S, magnetic force is supplied to the electromagnet to collect metal particles, and the magnetic force of the electromagnet is periodically or aperiodically applied. By disengaging and driving the fan unit 200, metal particles can be discharged to the outside of the housing 100.

The substrate processing method using the substrate processing apparatus 1000 having the above-described configuration is as follows.

First, generating a downward airflow inside the housing 100 by driving the fan unit 200 and discharging fluid inside the housing 100 by driving the auto dampers 120 and 122. may include.

In this case, the auto dampers 120 and 122 are opened when the pressure difference between the inside and outside of the housing 100 detected by the pressure gauges 320 and 340 is greater than a preset threshold, or the fan It may be opened when the unit 200 is driven.

In addition, when the shutter 450 is lowered after completing the process on the substrate S, a downward airflow is generated by driving the fan unit 200, thereby causing metal particles to fall to the lower part of the substrate S rather than the upper part. You can do it. Metal particles that have fallen to the bottom of the substrate (S) can be prevented from being discharged and adsorbed to the substrate (S) by opening the auto dampers (120, 122).

In addition, when the above-mentioned magnetic materials 510 and 530 are composed of electromagnets, the magnetic force of the electromagnet can be released periodically or aperiodically and particles can be discharged by the fan unit 200.

Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may make various modifications and changes to the present invention without departing from the spirit and scope of the present invention as set forth in the claims described below. You can do it. Therefore, if the modified implementation basically includes the elements of the claims of the present invention, it should be considered to be included in the technical scope of the present invention.

100: housing
120: 1st auto damper
122: 2nd auto damper
140: Main exhaust passage
142: first exhaust passage
144: Second exhaust passage
200: Fan unit
320: first pressure sensor
340: second pressure sensor
400: Chamber
422: 1st frame
426: 2nd frame
430: Tray unit
450: Shutter
1000: Substrate processing device

Claims (14)

A housing in which a chamber for performing a processing process on a substrate is located;
A fan unit provided at the top of the housing to generate a downward airflow inside the housing:
An auto damper provided at the lower part of the housing and opened and closed to exhaust fluid inside the housing; and
A substrate processing apparatus comprising a pressure gauge that detects a pressure difference between the inside and outside of the housing. According to paragraph 1,
The pressure gauge is
A substrate processing apparatus comprising a first pressure sensor installed inside the housing and a second pressure sensor installed in an exhaust passage outside the housing. According to paragraph 1,
The auto damper is
A substrate processing apparatus, characterized in that it is opened when the pressure difference between the inside and outside of the housing detected by the pressure gauge is greater than a preset threshold. According to paragraph 1,
The auto damper is
A substrate processing device that opens when the fan unit is driven. According to paragraph 1,
The chamber is
a tray unit that supports the substrate and is capable of being introduced into and out of the chamber through an opening of the chamber;
a shutter that pressurizes the tray unit;
A substrate processing apparatus further comprising a magnetic material for collecting metal particles generated by friction between the tray unit and the shutter. According to clause 5,
When the shutter is lowered after completing the process on the substrate, a downward airflow is generated by the fan unit to lower the metal particles to the lower part of the substrate rather than the upper part, thereby suppressing the metal particles adsorbed to the substrate. Substrate processing equipment. According to clause 5,
The tray unit is
A tray supporting the substrate, and a cover provided at an end of the tray to seal the opening of the chamber,
A substrate processing apparatus, wherein the magnetic material is provided on at least one of the cover and the shutter. In clause 7,
A substrate processing apparatus, wherein the magnetic material includes a first magnetic material and a second magnetic material installed on surfaces of the cover and the shutter facing each other. According to clause 8,
A substrate processing apparatus, wherein the first magnetic material and the second magnetic material can be formed of a single magnetic material or a plurality of separated magnetic materials. In clause 7,
Further comprising a fixed frame provided on a front surface of the chamber where the opening is formed and having a frame opening through which the shutter is inserted,
A substrate processing apparatus, wherein the magnetic material further includes an additional magnetic material installed along an edge of the frame opening. According to clause 5,
The substrate processing device is characterized in that the magnetic material is composed of an electromagnet, periodically or non-periodically releasing the magnetic force and discharging particles by the fan unit. Substrate processing by a substrate processing apparatus equipped with a fan unit installed in a housing equipped with a chamber for performing a processing process on a substrate, an auto damper installed in the housing, and a pressure gauge that detects the pressure difference between the inside and outside of the housing. In the method,
Generating a downward airflow inside the housing by driving the fan unit; and
Discharging the fluid inside the housing by driving the auto damper,
The auto damper is opened when the pressure difference between the inside and outside of the housing detected by the pressure gauge is greater than a preset threshold, or when the fan unit is driven. According to clause 12,
The chamber further includes a movable tray unit that supports the substrate and a shutter that presses the tray unit,
The step of discharging the fluid inside the housing by driving the auto damper generates a downward airflow by driving the fan unit when the shutter is lowered after completing the process on the substrate, thereby causing metal particles to be lowered from the upper part of the substrate. A substrate processing method characterized by suppressing metal particles adsorbed to the substrate by lowering them to the bottom. According to clause 12,
Further comprising an electromagnet for collecting metal particles generated by friction between the tray unit and the shutter,
A substrate processing method characterized by periodically or aperiodically releasing the magnetic force of the electromagnet and discharging particles by the fan unit.