KR20240078304A - Display device and method for manufacturing of the same - Google Patents

Abstract

One embodiment of the present invention includes a substrate including an opening area, a display area at least partially surrounding the opening area, and an intermediate area between the opening area and the display area, and an inorganic insulation disposed on the substrate and having holes defined thereon. a layer, a first organic insulating layer filled in the holes and having grooves formed on an upper surface, a metal layer disposed on the first organic insulating layer and including end portions, and a protective layer disposed on the base metal layer, and the base metal layer. The ends of the metal layer are disposed to be spaced apart from each other on top of the grooves, and the top and side surfaces of the ends of the metal layer are covered with the protective layer, providing a display device.

Description

Display device and method for manufacturing the same {Display device and method for manufacturing of the same}

The present invention relates to a display device and a method of manufacturing the same.

Recently, the uses of display devices have become more diverse. In addition, the thickness of display devices is becoming thinner and lighter, and the scope of their use is expanding.

As the area occupied by the display area of the display device is expanded, various functions that are incorporated or linked to the display device are being added. As a way to expand the area and add various functions, research is being conducted on display devices that can place various components in the display area.

The present invention can provide a display device having an opening area that can be utilized for various purposes, such as arranging various types of components within the display area. However, these tasks are illustrative and do not limit the scope of the present invention.

According to one aspect of the present invention, a substrate including an opening area, a display area at least partially surrounding the opening area, and an intermediate area between the opening area and the display area, a weapon disposed on the substrate and having holes defined thereon. An insulating layer, a first organic insulating layer filled in the holes and having grooves formed on an upper surface, a metal layer disposed on the first organic insulating layer and including end portions, and a protective layer disposed on the metal layer, A display device is provided, wherein ends of the metal layer are disposed to be spaced apart from each other on top of the grooves, and top and side surfaces of the ends of the metal layer are covered with the protective layer.

According to this embodiment, the protective layer may also be disposed on the grooves of the first organic insulating layer.

According to this embodiment, it may include a first dam disposed on the intermediate region.

According to this embodiment, the holes are defined in the inorganic insulating layer disposed between the display area and the first dam, and the first organic insulating layer filling the holes may include the grooves on its upper surface. .

According to this embodiment, it may further include a second dam disposed between the first dam and the opening area.

According to this embodiment, the holes are defined in the inorganic insulating layer disposed between the first dam and the second dam, and the first organic insulating layer filled in the holes may include the grooves on its upper surface. there is.

According to this embodiment, the first dam and the second dam may include the same material.

According to this embodiment, the holes are defined in the inorganic insulating layer disposed between the second dam and the opening area, and the first organic insulating layer filling the holes may include the grooves on its upper surface. .

According to this embodiment, it may include a third dam disposed between the second dam and the opening area.

According to this embodiment, it may include a light emitting device including a pixel electrode disposed on the display area, a counter electrode, and a functional layer between the pixel electrode and the counter electrode.

According to this embodiment, the protective layer and the pixel electrode may include the same material.

According to this embodiment, the functional layer extends from the display area to the middle area, and the functional layer may be short-circuited by ends of the metal layer.

According to this embodiment, the counter electrode extends from the display area to the middle area, and the functional layer may be short-circuited by ends of the metal layer.

According to another aspect of the present invention, forming an inorganic insulating layer on a substrate including an opening area, a display area at least partially surrounding the opening area, and an intermediate area between the opening area and the display area, the intermediate area forming holes by removing at least a portion of the inorganic insulating layer, forming a first organic insulating layer in the holes of the inorganic insulating layer, forming a metal layer on the first organic insulating layer, At least a portion of the metal layer formed on top of the holes is etched to form ends in the metal layer, and a protective layer is formed on the metal layer, wherein the protective layer covers the top and side surfaces of the ends of the metal layer. , a method of manufacturing a display device is provided.

According to this embodiment, in the step of forming ends in the metal layer by etching at least a portion of the metal layer formed on top of the holes, at least a portion of the first organic insulating layer is also etched at the same time to form the first organic insulating layer. Grooves may be formed.

According to this embodiment, the protective layer may also be disposed on the grooves of the first organic insulating layer.

According to this embodiment, the ends of the metal layer may be formed to be spaced apart from each other on top of the grooves.

According to this embodiment, etching at least a portion of the metal layer formed on top of the holes to form ends in the metal layer includes disposing a photoresist on the metal layer, It may include removing photoresist disposed on at least a portion of the photoresist, removing at least a portion of the metal layer formed on top of the holes by etching, and removing the photoresist.

According to this embodiment, the protective layer can be formed simultaneously with the pixel electrode of the light emitting device disposed in the display area.

According to this embodiment, the protective layer and the pixel electrode may include the same material.

Display devices according to embodiments of the present invention can prevent external impurities such as moisture from damaging display elements centered on the opening area. However, this effect is illustrative, and the effects according to the embodiments will be described in detail later.

1 is a perspective view schematically showing a display device according to an embodiment of the present invention.
Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention.
Figure 3 is a plan view schematically showing a display device according to an embodiment of the present invention.
Figure 4 is an equivalent circuit diagram schematically showing a pixel of one of the display devices according to an embodiment of the present invention.
Figure 5 is a plan view schematically showing a portion of a display device according to an embodiment of the present invention.
Figure 6 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention.
7A to 7C schematically show a top view of a display device according to an embodiment of the present invention.
Figure 8a is a schematic cross-sectional view showing an enlarged area C of Figure 7a.
Figure 8b is an enlarged cross-sectional view of a partial area of Figure 8a.
9 to 15 are cross-sectional views schematically showing a method of manufacturing a display device.

Since the present invention can be modified in various ways and can have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components will be assigned the same reference numerals and redundant description thereof will be omitted. .

In the following embodiments, terms such as first and second are used not in a limiting sense but for the purpose of distinguishing one component from another component.

In the following examples, singular terms include plural terms unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have mean the presence of features or components described in the specification, and do not exclude in advance the possibility of adding one or more other features or components.

In the following embodiments, when a part of a film, region, component, etc. is said to be on or on another part, it is not only the case where it is directly on top of the other part, but also when another film, region, component, etc. is interposed between them. Also includes cases where there are.

In the drawings, the sizes of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are shown arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is shown.

In cases where an embodiment can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially at the same time, or may be performed in an order opposite to that in which they are described.

In this specification, “A and/or B” refers to A, B, or A and B. And, “at least one of A and B” indicates the case of A, B, or A and B.

In the following embodiments, when membranes, regions, components, etc. are said to be connected, if the membranes, regions, and components are directly connected, or/and other membranes, regions, and components are in the middle of the membranes, regions, and components. This also includes cases where they are interposed and indirectly connected. For example, when membranes, regions, components, etc. are said to be electrically connected in this specification, when the membranes, regions, components, etc. are directly electrically connected, and/or other membranes, regions, components, etc. are interposed. indicates a case of indirect electrical connection.

The x-axis, y-axis, and z-axis are not limited to the three axes in the Cartesian coordinate system and can be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may also refer to different directions that are not orthogonal to each other.

1 is a perspective view schematically showing a display device according to an embodiment of the present invention.

Referring to FIG. 1, the display device 1 is a device that displays moving images or still images, and may be used in a mobile phone, a smart phone, a tablet personal computer, a mobile communication terminal, or an electronic notebook. , Display of various products such as televisions, laptops, monitors, billboards, internet of things (IOT), etc., as well as portable electronic devices such as e-books, portable multimedia players (PMPs), navigation, and UMPCs (Ultra Mobile PCs). It can be used as a screen. In addition, the display device 1 according to one embodiment is mounted on a wearable device such as a smart watch, a watch phone, a glasses-type display, and a head mounted display (HMD). can be used In addition, the display device 1 according to one embodiment includes a dashboard of a car, a center information display (CID) disposed on the center fascia or dashboard of a car, and a room mirror display (a room mirror display instead of a side mirror of a car). room mirror display), can be used as entertainment for the backseat of a car, and as a display placed on the back of the front seat. The aforementioned electronic devices may be bendable, foldable, or rollable. For convenience of explanation, FIG. 1 shows the display device 1 according to one embodiment being used as a smart phone.

The display device 1 may have a rectangular shape in plan view. For example, the display device 1 may have a rectangular planar shape with a short side in the x-direction and a long side in the y-direction as shown in FIG. 1 . The corner where the short side in the x-direction meets the long side in the y-direction may be rounded to have a predetermined curvature or may be formed at a right angle. The planar shape of the display device 1 is not limited to a rectangle, and may be formed in other polygonal, oval, or irregular shapes.

The display device 1 may include an opening area OA and a display area DA at least partially surrounding the opening area OA. The display device 1 may include a middle area (MA) located between the opening area (OA) and the display area (DA) and an outer area (PA) surrounding the outside of the display area (DA). The middle area (MA) and the outer area (PA) may each correspond to non-display areas that do not emit light.

The opening area (OA) may be located inside the display area (DA). In one embodiment, the open area OA may be disposed at the upper center of the display area DA as shown in FIG. 1 . Alternatively, the opening area OA may be placed in various positions, such as at the center of the display area DA, at the upper left side, or at the upper right side. In the plan view of this specification, “left”, “right”, “top”, and “bottom” refer to the direction when the display device 1 is viewed from the vertical direction of the display device 1. For example, "left" refers to the -x direction, "right" refers to the +x direction, "up" refers to the +y direction, and "down" refers to the -y direction. 1A and 1B show one opening area (OA), but in another embodiment, a plurality of opening areas (OA) may be provided.

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'선에 따른 단면을 나타낸 것이다.Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention. Specifically, in Figure 1

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'It shows a cross section along a line.

Referring to FIG. 2 , the display device 1 may include a display panel 10 and a component 70 disposed in the opening area OA of the display panel 10 . The display panel 10 and components 70 may be accommodated in the housing HS.

The display panel 10 may include a substrate 100, a display layer 200, an encapsulation layer 300, an input sensing layer 400, an optical functional layer 500, and a cover window 600.

The display layer 200 may include light-emitting elements (eg, light-emitting diodes) that emit light to display an image, and circuit elements that are electrically connected to the light-emitting elements and include transistors.

The encapsulation layer 300 can seal the light-emitting elements of the display layer 200. In one embodiment, the encapsulation layer 300 may include an inorganic encapsulation layer and an organic encapsulation layer. In another embodiment, the encapsulation layer 300 may include an encapsulation substrate that faces the substrate 100 included in the display panel 10 and includes substantially the same material.

The input sensing layer 400 can acquire coordinate information according to an external input, for example, a touch event. The input sensing layer 400 may include a sensing electrode (sensing electrode or touch electrode) and a signal line (trace line) connected to the sensing electrode. The input sensing layer 400 may be disposed on the display layer 200. The input sensing layer 400 can detect external inputs using a mutual cap method and/or a self cap method.

The input sensing layer 400 may be formed directly on the display layer 200, or may be formed separately and then bonded through an adhesive layer such as an optically transparent adhesive. For example, the input sensing layer 400 may be formed continuously after the process of forming the display layer 200, and in this case, the adhesive layer may not be interposed between the input sensing layer 400 and the display layer 200. . Figure 2 shows that the input sensing layer 400 is interposed between the display layer 200 and the optical functional layer 500, but in another embodiment, the input sensing layer 400 may be disposed on the optical functional layer 500. You can.

The optical functional layer 500 may include an anti-reflection layer. The anti-reflection layer can reduce the reflectance of light (external light) incident on the display panel 10 from the outside through the cover window 600. The anti-reflection layer may include a retarder and a polarizer.

In another embodiment, the anti-reflection layer may include a black matrix and color filters. Color filters may be arranged taking into account the color of light emitted from each light emitting diode of the display layer 200. In another embodiment, the anti-reflection layer may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. The first reflected light and the second reflected light reflected from the first and second reflective layers, respectively, may interfere destructively, and thus the external light reflectance may be reduced.

The optical functional layer 500 may include a lens layer. The lens layer can improve the efficiency of light emitted from the display layer 200 or reduce color deviation. The lens layer may include a layer having a concave or convex lens shape, and/or may include a plurality of layers having different refractive indices. The optical functional layer 500 may include both the anti-reflection layer and the lens layer described above, or may include any one of them.

At least one selected from the substrate 100, the display layer 200, the encapsulation layer 300, the input sensing layer 400, and the optical function layer 500 may include a through hole. In one embodiment, Figure 2 shows that the substrate 100, the display layer 200, the encapsulation layer 300, the input sensing layer 400, and the optical function layer 500 each have first to fifth through-holes 100H. , 200H, 300H, 400H, 500H). The first to fifth through holes (100H, 200H, 300H, 400H, and 500H) may overlap each other in the opening area (OA).

The first through hole 100H may penetrate from the upper surface to the lower surface of the substrate 100, and the second through hole 200H may penetrate from the upper surface to the lower surface of the display layer 200. The third through hole 300H may penetrate from the upper surface to the lower surface of the encapsulation layer 300, and the fourth through hole 400H may penetrate the input sensing layer 400 from the upper surface to the lower surface. The fifth through hole 500H may be a through hole penetrating from the top to the bottom of the optical function layer 500. The first to fifth through holes (100H, 200H, 300H, 400H, and 500H) may be positioned to overlap each other in the opening area (OA). The sizes (or diameters) of the first to fifth through holes (100H, 200H, 300H, 400H, and 500H) may be the same or different from each other.

The cover window 600 may be disposed on the optical functional layer 500. The cover window 600 may be coupled to the optical functional layer 500 through an adhesive layer such as a transparent optical clear adhesive (OCA) interposed between the cover windows 600 and the optical functional layer 500 .

The cover window 600 may include glass or plastic. For example, the cover window 600 may include an ultra-thin glass window. For example, the cover window 600 is made of polyethersulfone, polyacrylate, polyether imide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. may include.

The opening area OA may be a type of component area (eg, sensor area, camera area, speaker area, etc.) where components 70 for adding various functions to the display device 1 are located. The component 70 may be disposed under the display panel 10 to overlap the first through hole 100H of the substrate 100. For example, component 70 may be disposed on the lower surface of substrate 100 .

Component 70 may include electronic elements. For example, the component 70 may be an electronic element that uses light or sound. For example, electronic elements include sensors that use light such as infrared sensors, cameras that receive light and capture images, sensors that output and detect light or sound to measure distance or recognize fingerprints, etc., and small lamps that output light. , speakers that output sound, etc. Electronic elements that use light can use light in various wavelength bands, such as visible light, infrared light, and ultraviolet light. Light and/or sound output from the component 70 to the outside or traveling from the outside toward the component 70 may move through the opening area OA.

In another embodiment, when the display device 1 is used as a smart watch or a vehicle instrument panel, the component 70 may be a member including a clock hand or a needle indicating predetermined information (e.g., vehicle speed, etc.). there is. In this case, the cover window 600 may include an opening located in the opening area OA so that the needle-like component 70 can be exposed to the outside. Alternatively, even when the display device 1 includes a component 70 such as a speaker, the cover window 600 may include an opening corresponding to the opening area OA.

FIG. 3 is a plan view schematically showing a display device according to an embodiment of the present invention, and FIG. 4 is an equivalent circuit diagram schematically showing a pixel of one of the display devices according to an embodiment of the present invention.

Referring to FIG. 3 , the display device 1 may include an opening area (OA), a display area (DA), a middle area (MA), and an outer area (PA). FIG. 3 may be understood as a view of the substrate 100 of the display device 1. For example, the substrate 100 may be understood as having an opening area (OA), a display area (DA), a middle area (MA), and an outer area (PA).

The display device 1 includes a plurality of subpixels (P) arranged in the display area (DA). As shown in FIG. 4, each subpixel (P) is a pixel circuit (PC) and a display element connected to the pixel circuit (PC), and may include an organic light emitting diode (OLED). The pixel circuit (PC) may include a first thin film transistor (T1), a second thin film transistor (T2), and a storage capacitor (Cst). Each subpixel P may emit, for example, red, green, or blue light, or may emit red, green, blue, or white light through an organic light emitting diode (OLED).

The second thin film transistor (T2) is a switching thin film transistor, connected to the scan line (SL) and the data line (DL), and data input from the data line (DL) based on the switching voltage input from the scan line (SL). Voltage can be transmitted to the first thin film transistor (T1). The storage capacitor (Cst) is connected to the second thin film transistor (T2) and the driving voltage line (PL), and is connected to the voltage received from the second thin film transistor (T2) and the first power supply voltage (ELVDD) supplied to the driving voltage line (PL). The voltage corresponding to the difference can be stored.

The first thin film transistor (T1) is a driving thin film transistor, connected to the driving voltage line (PL) and the storage capacitor (Cst), and emits an organic light emitting diode (OLED) from the driving voltage line (PL) in response to the voltage value stored in the storage capacitor (Cst). The driving current flowing through the OLED can be controlled. Organic light-emitting diodes (OLEDs) can emit light with a certain brightness by driving current. The opposing electrode (eg, cathode) of the organic light emitting diode (OLED) may be supplied with the second power voltage (ELVSS).

Figure 4 illustrates that the pixel circuit (PC) includes two thin film transistors and one storage capacitor, but the present invention is not limited thereto. The number of thin film transistors and the number of storage capacitors may vary depending on the design of the pixel circuit (PC). For example, the pixel circuit (PC) may further include four, five or more thin film transistors in addition to the two thin film transistors described above.

Referring again to FIG. 4, the middle area (MA) may surround the opening area (OA) on a plane. The middle area (MA) is an area where display elements such as organic light emitting diodes that emit light are not placed. The middle area (MA) provides signals to the subpixels (P) arranged around the aperture area (OA). Signal lines can pass. The outer area (PA) includes a scan driver 1100 that provides a scan signal to each subpixel (P), a data driver 1200 that provides a data signal to each subpixel (P), and a first power supply voltage and a second power voltage. Main power wiring (not shown) to provide power voltage may be arranged. 4 shows that the data driver 1200 is disposed adjacent to one side of the substrate 100. However, according to another embodiment, the data driver 1200 is connected to a pad disposed on one side of the display device 1. It may be placed on an electrically connected flexible printed circuit board (FPCB).

Figure 5 is a plan view schematically showing a portion of a display device according to an embodiment of the present invention. FIG. 5 shows an opening area (OA) of the display panel 10, a middle area (MA) surrounding the opening area (OA), and a display area (DA) surrounding the middle area (MA).

Referring to FIG. 5, subpixels P are arranged in the display area DA, and a middle area MA may be located between the aperture area OA and the display area DA. The subpixels (P) may be arranged to surround the opening area (OA) and the middle area (MA) in the display area (DA).

The subpixel (P) is the minimum area where light is emitted, and is an area where red, green, or blue light is emitted, and light can be emitted through a light emitting element, such as a light emitting diode (LED). The location of the subpixel (P) may correspond to the location of the light emitting diode (LED). The fact that the subpixel P is disposed in the display area DA may indicate that the light emitting diode (LED) is disposed in the display area DA.

The subpixels (P) and/or light emitting diodes (LEDs) adjacent to the opening area (OA) may be arranged to be spaced apart from each other around the opening area (OA) on a plane. The subpixels (P) and/or light emitting diodes (LED) may be arranged to be spaced apart vertically around the opening area (OA), or may be arranged to be spaced left and right around the opening area (OA).

In the middle area MA, grooves GR may be arranged to be spaced apart from each other. Each groove GR may have a closed loop shape on a plane (eg, when viewed in a direction perpendicular to the top surface of the substrate). In some embodiments, the grooves GR may be arranged to form concentric circles as shown in FIG. 5 .

Dams (D) may be placed in the middle area (MA). The dams (D) may have a closed loop shape in the plane. Dams (D) may each be located between grooves (GR). In one embodiment, the dam (D) may include a first dam (D1) and a second dam (D2). The first dam (D1) and the second dam (D2) may be disposed in the middle area (MA). The first dam D1 may be placed closer to the opening area OA than the second dam D2. The second dam D2 may be disposed between the first dam D1 and the display area DA. In other words, the second dam (D2) may be placed closer to the display area (DA) than the first dam (D1), and the first dam (D1) is between the second dam (D2) and the opening area (OA). can be placed in However, the present invention is not limited to this. In another embodiment, the display panel 10 may have one or three or more dams D disposed in the middle area MA. For example, when three dams D are disposed in the middle area MA of the display panel 10, the dams may include a first dam, a second dam, and a third dam.

The grooves GR may be located between the opening area OA and the dam D, between the first dam D1 and the second dam D2, or between the display area DA and the second dam D2. there is. In one embodiment, Figure 5 shows two grooves (GR) located between the opening area (OA) and the first dam (D1), and one groove (GR) between the first dam (D1) and the second dam (D2) GR) is located, and a plurality of grooves GR are located between the display area DA and the second dam D2, but the present invention is not limited thereto. For example, four grooves GR may be located between the display area DA and the second dam D2. In another embodiment, one or three or more grooves GR may be disposed between the opening area OA and the dam D, and two grooves GR may be disposed between the first dam D1 and the second dam D2. More grooves GR may be arranged. However, the present invention is not limited to this.

Since the substrate 100 of the display panel 10 includes a first through hole 100H corresponding to the opening area OA, in this specification, the opening area OA refers to the first through hole 100H. It can be seen as For example, saying that the grooves GR are located between the dam D and the opening area OA may indicate that the grooves GR are located between the dam D and the first through hole 100H.

Figure 6 is a cross-sectional view schematically showing a display device according to an embodiment of the present invention. Figure 6 corresponds to a cross-sectional view taken along line II-II' in Figure 5.

Referring to FIG. 6, the substrate 100 may include a glass material or a polymer resin. When the substrate 100 is made of a polymer resin, the substrate 100 is made of polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, or polyethylene terephthalate. It may include polymer resins such as polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc.

Although not shown, the substrate 100 may include a first base layer, a first barrier layer, a second base layer, and a second barrier layer. In one embodiment, the first base layer, the first barrier layer, the second base layer, and the second barrier layer may be sequentially stacked in the thickness direction of the substrate 100.

The first barrier layer and the second barrier layer are barrier layers that prevent the penetration of external foreign substances, and contain inorganic materials _such as silicon nitride ( _SiN It may be single layer or multilayer.

A buffer layer 105 formed to prevent impurities from penetrating into the semiconductor layer (Act) of the thin film transistor (TFT) may be disposed on the substrate 100. The buffer layer 105 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may be a single layer or a multilayer containing the above-described inorganic insulating material.

A pixel circuit (PC) may be disposed on the buffer layer 105. The pixel circuit (PC) includes a thin film transistor (TFT) and a storage capacitor (Cst). A thin film transistor (TFT) may include a semiconductor layer (Act), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE). In this embodiment, the gate electrode (GE) is a top gate type disposed on the semiconductor layer (Act) with the first insulating layer 201 in the center. However, according to another embodiment, the thin film transistor (TFT) is a bottom gate type. It can be.

The semiconductor layer (Act) may include polysilicon. Alternatively, the semiconductor layer (Act) may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The gate electrode (GE) may include a low-resistance metal material. The gate electrode (GE) may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer containing the above materials. there is.

The first insulating layer 201 between the semiconductor layer (Act) and the gate electrode (GE) is made of an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxy nitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. It can be included. The first insulating layer 201 may be a single layer or a multilayer containing the above-described materials.

The source electrode (SE) and drain electrode (DE) may include a material with good conductivity. The source electrode (SE) and drain electrode (DE) may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be a multilayer containing the above materials. Alternatively, it may be formed as a single layer. In one embodiment, the source electrode (SE), drain electrode (DE), and data line (DL) may be formed in a multi-layer structure of a titanium layer, an aluminum layer, and a titanium layer (Ti/Al/Ti).

The storage capacitor Cst may include a lower electrode CE1 and an upper electrode CE2 that overlap with the second insulating layer 203 therebetween. The storage capacitor (Cst) may overlap with the thin film transistor (TFT). In this regard, Figure 6 shows that the gate electrode (GE) of the thin film transistor (TFT) is the lower electrode (CE1) of the storage capacitor (Cst). As another example, the storage capacitor (Cst) may not overlap the thin film transistor (TFT). The storage capacitor Cst may be covered with the third insulating layer 205. The upper electrode (CE2) of the storage capacitor (Cst) may include a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be a multilayer containing the above materials. Alternatively, it may be formed as a single layer.

A fourth insulating layer 207 may be disposed on the third insulating layer 205. The second insulating layer 203, the third insulating layer 205, and the fourth insulating layer 207 include silicon oxide, silicon nitride, silicon oxy nitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, etc. May contain inorganic insulating material. The second insulating layer 203, third insulating layer 205, and fourth insulating layer 205 may be a single layer or a multilayer containing the above-described materials. However, the present invention is not limited to this. Although not shown, a fifth insulating layer may be disposed on the fourth insulating layer 205. Additionally, a gate electrode may be disposed on the fourth insulating layer.

The pixel circuit (PC) including a thin film transistor (TFT) and a storage capacitor (Cst) may be covered with the first organic insulating layer 209. The first organic insulating layer 209 may have a substantially flat top surface.

The pixel circuit (PC) may be electrically connected to the pixel electrode 221. For example, as shown in FIG. 6, a contact metal layer (CM) may be interposed between the thin film transistor (TFT) and the pixel electrode 221. The contact metal layer (CM) can be connected to a thin film transistor (TFT) through a contact hole formed in the first organic insulating layer 209, and the pixel electrode 221 is connected to the second organic insulating layer (CM) on the contact metal layer (CM). It can be connected to the contact metal layer (CM) through the contact hole formed in 211). The contact metal layer (CM) may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer containing the above materials. You can. In one embodiment, the contact metal layer (CM) may be formed as a multilayer of Ti/Al/Ti.

The first organic insulating layer 209 and the second organic insulating layer 211 are made of general-purpose polymers such as polymethylmethacrylate (PMMA) or polystylene (PS), polymer derivatives with phenolic groups, acrylic polymers, imide polymers, and aryl ethers. It may include organic insulators such as polymers, amide-based polymers, fluorine-based polymers, p-xylene-based polymers, vinyl alcohol-based polymers, and blends thereof. In one embodiment, the first organic insulating layer 209 and the second organic insulating layer 211 may include polyimide.

The pixel electrode 221 may be formed on the second organic insulating layer 211. The pixel electrode 221 is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ), and indium. It may contain a conductive oxide such as gallium oxide (IGO; indium gallium oxide) or aluminum zinc oxide (AZO). In another embodiment, the pixel electrode 221 is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), and neodymium (Nd). , it may include a reflective film containing iridium (Ir), chromium (Cr), or a compound thereof. In another embodiment, the pixel electrode 221 may further include a film formed of ITO, IZO, ZnO, or In ₂ O ₃ above and below the above-described reflective film.

A third organic insulating layer 213 may be formed on the pixel electrode 221. The third organic insulating layer 213 may be a pixel defining layer that defines the light emitting area of the pixel. The third organic insulating layer 213 includes an opening that exposes at least a portion of the upper surface of the pixel electrode 221, and may cover an edge of the pixel electrode 221. The third organic insulating layer 213 may include an organic insulating material. Alternatively, the third organic insulating layer 213 may include an inorganic insulating material such as silicon nitride (SiN _x ), silicon oxynitride (SiON), or silicon oxide (SiO _x ). Alternatively, the third organic insulating layer 213 may include an organic insulating material and an inorganic insulating material.

The middle layer 222 includes a light emitting layer 222b. The middle layer 222 may include a first functional layer 222a disposed below the light-emitting layer 222b and/or a second functional layer 222c disposed above the light-emitting layer 222b. The light-emitting layer 222b may include a polymer or low-molecular organic material that emits light of a predetermined color.

The first functional layer 222a may be a single layer or a multilayer. For example, when the first functional layer 222a is formed of a polymer material, the first functional layer 222a is a single-layer hole transport layer (HTL), and is polyethylene dihydroxythiophene (PEDOT: poly-( It can be formed from 3,4)-ethylene-dihydroxy thiophene) or polyaniline (PANI: polyaniline). When the first functional layer 222a is formed of a low molecule material, the first functional layer 222a may include a hole injection layer (HIL) and a hole transport layer (HTL).

The second functional layer 222c is not always provided. For example, when the first functional layer 222a and the light emitting layer 222b are formed of a polymer material, it is preferable to form the second functional layer 222c. The second functional layer 222c may be a single layer or a multilayer. The second functional layer 222c may include an electron transport layer (ETL) and/or an electron injection layer (EIL).

Among the intermediate layers 222, the light emitting layer 222b may be disposed for each pixel in the display area DA. The light emitting layer 222b may be patterned to correspond to the pixel electrode 221. Unlike the light emitting layer 222b, the first functional layer 222a and/or the second functional layer 222c of the middle layer 222 are located in the middle area (MA) as well as the display area (DA). can be extended toward.

The counter electrode 223 may be made of a conductive material with a low work function. For example, the counter electrode 223 is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), and iridium ( It may include a (semi) transparent layer containing Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the counter electrode 223 may further include a layer such as ITO, IZO, ZnO, or In ₂ O ₃ on the (semi) transparent layer containing the above-mentioned material. The counter electrode 223 may be formed not only on the display area (DA) but also on the middle area (MA). The first functional layer 222a, the second functional layer 222c, and the counter electrode 223 may be formed by thermal evaporation.

Although not shown, a capping layer may be disposed on the counter electrode 223. For example, the capping layer may include LiF and may be formed by thermal evaporation. In some embodiments, the capping layer may be omitted.

A fourth organic insulating layer 217 may be formed on the third organic insulating layer 213. The fourth organic insulating layer 217 may include an organic insulating material such as polyimide. Alternatively, the fourth organic insulating layer 217 may include an inorganic insulating material, or may include an organic insulating material and an inorganic insulating material.

The fourth organic insulating layer 217 may include a different material from the third organic insulating layer 213, or may include the same material as the third organic insulating layer 213. As an example, the third organic insulating layer 213 and the fourth organic insulating layer 217 may include polyimide. The third organic insulating layer 213 and the fourth organic insulating layer 217 may be formed together in a mask process using a halftone mask.

The organic light emitting diode (OLED) is covered with an encapsulation layer 300. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer, and FIG. 6 shows the encapsulation layer 300 including the first and second inorganic encapsulation layers 310 and 330 and these. It is shown to include an organic encapsulation layer 320 interposed therebetween. In other embodiments, the number of organic encapsulation layers and the number and stacking order of inorganic encapsulation layers may be changed.

The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 are made of one or more inorganic materials among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. It can be included. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be a single layer or multilayer containing the above-described materials. The organic encapsulation layer 320 may include a polymer-based material. Polymer-based materials may include acrylic resins such as polymethyl methacrylate and polyacrylic acid, epoxy resins, polyimide, and polyethylene. In one embodiment, the organic encapsulation layer 320 may include an acrylate polymer.

The materials of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be different from each other. For example, the first inorganic encapsulation layer 310 may include silicon oxynitride, and the second inorganic encapsulation layer 330 may include silicon nitride. The thickness of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may be different from each other. The thickness of the first inorganic encapsulation layer 310 may be greater than the thickness of the second inorganic encapsulation layer 330. Alternatively, the thickness of the second inorganic encapsulation layer 330 is greater than the thickness of the first inorganic encapsulation layer 310, or the thicknesses of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 are the same. can do.

7A to 7C schematically show a top view of a display device according to an embodiment of the present invention. Specifically, FIG. 7A schematically shows a cross-sectional view of the display panel according to an embodiment of the present invention of FIG. 5 taken along line III-III'. FIGS. 7B and 7C schematically show enlarged cross-sectional views of areas A and B of FIG. 7A.

Referring to FIGS. 7A to 7C, dams D1 and D2, grooves G, and stepped portions of the metal layer 230 disposed on the grooves G may be disposed in the middle area MA. there is. The dams D1 and D2 may include a first dam D1 and a second dam D2. However, the present invention is not limited to this. The middle area (MA) may contain one, three, or four or more dams. For example, the third dam D3 may be disposed between the second dam D2 and the opening area OA.

In one embodiment, the first dam (D1) and the second dam (D2) may include the same material. The first dam D1 and the second dam D2 may include a second organic insulating layer 211 and a third organic insulating layer 213 that are sequentially stacked. In other words, the first dam D1 and the second dam D2 may have a structure in which the second organic insulating layer 211 and the third organic insulating layer 213 are sequentially stacked. However, the present invention is not limited to this. In another embodiment, the third dam D3 disposed between the second dam D2 and the opening area OA may be provided with a third organic insulating layer 213.

The first dam (D1) and the second dam (D2) may be provided relatively high. By providing the first dam (D1) and the second dam (D2) with relatively high heights, it is possible to minimize or prevent the monomer forming the organic encapsulation layer from being lost to the cutting line. In FIG. 7, the first dam D1 is shown to prevent loss of monomers forming the organic encapsulation layer 320, but the present invention is not limited thereto. In another embodiment, the second dam D2 may prevent loss of the monomer forming the organic encapsulation layer 320.

In one embodiment, the first dam D1 may be disposed between the display area DA and the opening area OA. The first dam D1 may be arranged along the perimeter of the opening area OA. The second dam D2 may be disposed between the first dam D1 and the opening area OA. The second dam D2 may be arranged along the perimeter of the opening area OA.

In one embodiment, a buffer layer 105 and an inorganic insulating layer (IIL) may be disposed on the substrate 100. The inorganic insulating layer (IIL) may include a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, and a fourth insulating layer 207. Holes H(IIL) penetrating the third insulating layer 205 and the fourth insulating layer 207 may be defined in the middle region. However, the present invention is not limited to this. In another embodiment, the inorganic insulating layer (IIL) includes a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, a fourth insulating layer 207, and a fifth insulating layer. It can be included. The fifth insulating layer may be disposed on the fourth insulating layer 207. Holes penetrating the fourth insulating layer 207 and the fifth insulating layer 207 and the fifth insulating layer in the middle region may be defined.

The holes H(IIL) of the inorganic insulating layer (IIL) may be filled with the first organic insulating layer 209. Grooves GR may be formed on the upper surface of the first organic insulating layer 209. In other words, grooves GR may be formed on the upper surface of the first organic insulating layer 209 within the holes H(IIL) of the inorganic insulating layer IIL. In one embodiment, four holes (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the first dam (D1) and the display area (DA), and the first organic insulating layer (209) Four grooves (GR) may be formed on the upper surface. One hole (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the first dam (D1) and the second dam (D2), and one hole (H(IIL)) may be defined on the upper surface of the first organic insulating layer 209. Two grooves (GR) may be formed. Additionally, two holes (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the second dam (D2) and the opening area (OA), and two holes (H(IIL)) may be defined on the upper surface of the first organic insulating layer (209). Several grooves GR may be formed. However, the present invention is not limited to this. Five or more holes (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the first dam (D1) and the display area (DA), and five holes (H(IIL)) may be defined on the upper surface of the first organic insulating layer (209). More grooves GR may be formed. Two or more holes (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the first dam (D1) and the second dam (D2), and on the upper surface of the first organic insulating layer (209) Two or more grooves GR may be formed. Two or more holes (H(IIL)) may be defined in the inorganic insulating layer (IIL) between the second dam (D2) and the opening area (OA), and two holes (H(IIL)) may be defined on the upper surface of the first organic insulating layer (209). More grooves GR may be formed. Although not shown, in another embodiment, if the display panel 10 includes a third dam between the second dam D2 and the opening area OA, a weapon between the second dam D2 and the third dam One hole (H(IIL)) may be defined in the insulating layer (IIL), one groove (GR) may be formed on the upper surface of the first organic insulating layer 209, and a third dam and an opening area One hole (H(IIL)) may be defined in the inorganic insulating layer (IIL) between (OA), and one groove (GR) may be formed on the upper surface of the first organic insulating layer 209. However, the present invention is not limited to this.

In one embodiment, a metal layer 230 may be disposed on the first organic insulating layer 209. The metal layer 230 may be made of the same material as the contact metal layer (CM) in the cross-sectional view of the display area (DA) of FIG. 6, and the metal layer 230 and the contact metal layer (CM) are formed by being patterned simultaneously in the same process. It can be. The metal layer 230 may contain a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer containing the above materials. . In one embodiment, the metal layer 230 may be formed as a multilayer of Ti/Al/Ti. Metal layer 230 may include ends. End portions of the metal layer 230 may be disposed to be spaced apart from each other on top of the grooves GR of the first organic insulating layer 209 . The metal layer 230 includes end portions and is disposed on top of the grooves GR of the first organic insulating layer 209, thereby forming functional layers 222a and 222c extending from the display area DA to the middle area MA. and the counter electrode 223 can be short-circuited. The functional layers (222a, 222c) and the counter electrode 223 are short-circuited in the middle area (MA) by the ends of the metal layer 230, thereby preventing moisture or external exposure through the functional layers (222a, 222c) and the counter electrode 223. The reliability of the display panel 10 can be secured by preventing air from penetrating into the display area DA. In addition, the ends of the metal layer 230 that short-circuits the functional layers 222a and 222c and the counter electrode 223 and the grooves GR of the first organic insulating layer 209 are connected to the contact metal layer CM and the first organic insulating layer 209 in the display area. 1 Since the organic insulating layer 209 is patterned and formed at the same time as it is formed, a structure that short-circuits the functional layers 222a and 222c and the counter electrode 223 without an additional mask can be provided.

In one embodiment, a protective layer 240 may be disposed on top of the metal layer 230. The top and side surfaces of the ends of the metal layer 230 may be covered with a protective layer 240 . In other words, the top and side surfaces of the metal layer 230 may be covered with the protective layer 240. The protective layer 240 may include the same material as the pixel electrode 221 of the organic light emitting diode (OLED) disposed in the display area DA of the display panel 10. The protective layer 240 may be formed by being patterned simultaneously in the same process as the pixel electrode 221 of the organic light emitting diode (OLED) disposed in the display area DA of the display panel 10. The protective layer 240 is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂ O ₃ ), and indium. It may contain a conductive oxide such as gallium oxide (IGO; indium gallium oxide) or aluminum zinc oxide (AZO). In another embodiment, the protective layer 240 is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), and neodymium (Nd). , it may include a reflective film containing iridium (Ir), chromium (Cr), or a compound thereof. In another embodiment, the protective layer 240 may further include a film formed of ITO, IZO, ZnO, or In ₂ O ₃ above/below the above-described reflective film. When the Al (aluminum) on the side of the metal layer 230 is etched by exposure to an etchant or developer during the process of the display panel 10, an undercut structure is formed between Ti (titanium) and Al (aluminum) of the metal layer, which is used in subsequent layers. Defects may be caused. By covering the side of the metal layer 230 with the protective layer 240, Al (aluminum) of the metal layer is prevented from being exposed to an etchant or developer during the process of the display panel 10, and the Al (aluminum) of the metal layer 230 is prevented from being exposed to an etchant or developer during the process of the display panel 10. Aluminum) can be etched to prevent defects from occurring in subsequent layers. In addition, Al (aluminum) of the metal layer 230 can cause defects through a reduction effect with Ag (silver) contained in the protective layer 240, and the side of the metal layer 230 is covered with the protective layer 240. By being covered, exposure of Al (aluminum) of the metal layer 230 is blocked, thereby fundamentally preventing defects from occurring in the display panel 10.

Since the protective layer 240 may be short-circuited by the ends included in the metal layer 230, the protective layer 240 may also be disposed on the grooves GR of the first organic insulating layer 209. Functional layers 222a and 222c extending from the display area DA to the middle area MA and the counter electrode 223 may be disposed on the protective layer 240. Since the functional layers 222a and 222c and the counter electrode 223 may be shorted at the ends of the metal layer 230, the functional layers 222a and 222c may be formed on the grooves GR of the first organic insulating layer 209. ) and the counter electrode 223 may be disposed. In other words, the protective layer 240, functional layers 222a and 222c, and the counter electrode 223 may be disposed on the grooves GR of the first organic insulating layer 209. A protective layer 240, functional layers 222a and 222c, and a counter electrode 223 may be sequentially disposed on the grooves GR of the first organic insulating layer 209.

In one embodiment, the first organic insulating layer 209 and the second organic insulating layer 211 may be short-circuited at a point where the middle area (MA) starts from the display area (DA). At the point where the middle area starts from the display area (DA), the ends of the first organic insulating layer 209 and the second organic insulating layer 211 may be located on the inorganic insulating layer (IIL) of the middle area (MA). there is. In other words, the ends of the first organic insulating layer 209 and the second organic insulating layer 211 are located on the fourth insulating layer 207 at the point where the middle area (MA) begins in the display area (DA). can do. After the first organic insulating layer 209 is formed during the process of the display panel 10, the metal layer 230 may be formed, and thereafter, the second organic insulating layer 211 and the protective layer 240 are sequentially formed. can be formed. Since the second organic insulating layer 211 is formed after the metal layer 230 is formed, the side of the end of the second organic insulating layer 211 and the metal layer ( The sides of the ends of 230) may be in contact with each other. In the subsequent process, the top and side surfaces of the metal layer 230 are covered with the protective layer 240, thereby protecting the top and side surfaces of the ends of the metal layer 230 in contact with the ends of the second organic insulating layer 211. It may be covered with layer 240. Specifically, the side and top surfaces of the ends of the metal layer 230 located at the point where the middle area (MA) starts from the display area (DA) may be covered with the second organic insulating layer 211 and the protective layer 240. . Additionally, the first dam D1 may include a third organic insulating layer 213. The third organic insulating layer 213 of the first dam D1 may be formed after the metal layer 230 and the protective layer 240 are formed. Accordingly, the end of the third organic insulating layer 213 of the first dam D1 may be located on the protective layer 240. The third organic insulating layer 213 of the first dam D1 may cover the ends of the metal layer 230 and the protective layer 240 that are in contact with it. Specifically, the ends of the metal layer 230 and the protective layer 240 in contact with the first dam D1 in the middle area MA are formed by the third organic insulating layer 213 included in the first dam D1. It can be covered. However, the present invention is not limited to this.

In one embodiment, in a first direction (eg, x direction or -x direction) from the point where the metal layer 230 starts from the display area DA to the middle area MA to the first dam D1. The length may be about 59.5㎛. The length of the first dam D1 in the first direction (eg, x direction or -x direction) may be about 30 μm. The length in the first direction (eg, x direction or -x direction) between the first dam D1 and the second dam D2 may be about 15.5 μm. The length of the second dam D2 in the first direction (eg, x direction or -x direction) may be about 30㎛. The length from the second dam D2 to the opening area OA in the first direction (eg, x direction or -x direction) may be about 51㎛. In another embodiment, the display panel may include a third dam between the second dam D2 and the opening area OA. In this case, the length of the second dam D2 and the third dam in the first direction (eg, x direction or -x direction) may be about 15.5 μm. The length of the third dam in the first direction (eg, x direction or -x direction) may be about 20 μm. The length in the first direction (eg, x direction or -x direction) between the third dam and the opening area (OA) may be about 15.5 μm. However, the present invention is not limited to this.

In one embodiment, the grooves GR formed on the upper surface of the first organic insulating layer 209, which fill the holes H(IIL) defined in the inorganic insulating layer IIL in the middle area MA, are formed in the organic encapsulation layer. It can be covered by (320). When the flow of monomer in the organic encapsulation layer 320 is interrupted by the first dam D1, the groove GR of the first organic insulating layer 209 between the first dam D1 and the display area DA may be covered with an organic encapsulation layer 320. In another embodiment, when the flow of monomer in the organic encapsulation layer 320 is interrupted by the second dam D2, the first organic insulating layer 209 between the first dam D1 and the display area DA The grooves GR and the groove GR of the first organic insulating layer 209 between the first dam D1 and the second dam D2 may also be covered with the organic encapsulation layer 320 .

The first inorganic encapsulation layer 310 of the encapsulation layer 300 may continuously cover the inner surfaces of the grooves GR of the first organic insulating layer 209, and the organic encapsulation layer 320 may cover the middle area (MA). ) can cover part of the. The first inorganic encapsulation layer 310 may be continuously covered on the middle area (MA). However, as described above, the organic encapsulation layer 320 is formed by the grooves GR of the first organic insulating layer 209 between the first dam D1 and the display area DA and/or the first dam D1. It may cover the grooves GR of the first organic insulating layer 209 between and the second dam D2. The second inorganic encapsulation layer 330 may entirely cover the middle area (MA).

The flow of monomers can be controlled when forming the organic encapsulation layer 320 through the first dam D1 or the second dam D2. In the middle area (MA), the organic encapsulation layer 320 may be discontinuous due to the first dam (D1) or the second dam (D2). An end of the organic encapsulation layer 320 may be located on one side of the first dam (D1) or the second dam (D2). The organic encapsulation layer 320 may not extend past the first dam D1 or the second dam D2 toward the opening area OA. A portion of the second inorganic encapsulation layer 330 may be in direct contact with a portion of the first inorganic encapsulation layer 310 on the first dam D1 or the second dam D2. However, the present invention is not limited to this.

Referring to the opening area OA of FIG. 7A, the display panel 10 may include the opening area OA. The opening area OA of the display panel 10 may include openings of components forming the display panel 10 . For example, the opening of the display panel 10 is the opening 100OP of the substrate 100, the opening 330OP of the first inorganic encapsulation layer 310OP and the second inorganic encapsulation layer 330 of the encapsulation layer 300, etc. It can be included.

The cross-sectional view of the display device 1 shown in FIG. 7A can be understood as a structure surrounding the opening area OA. For example, the grooves GR of FIG. 7A may each have a ring shape surrounding the opening area OA when viewed in a direction perpendicular to the top surface of the substrate 100 as shown in FIG. 5 . In other words, the grooves GR may each have a closed loop shape surrounding the opening area OA when viewed in a direction perpendicular to the top surface of the substrate 100. The dams D1 and D2 may also have a ring shape surrounding the opening area OA when viewed in a direction perpendicular to the top surface of the substrate 100. In other words, the dams D1 and D2 may each have a closed loop shape surrounding the opening area OA when viewed in a direction perpendicular to the top surface of the substrate 100.

Figure 8a is a schematic cross-sectional view showing an enlarged area C of Figure 7a. Figure 8b is an enlarged cross-sectional view of a partial area of Figure 8a. Specifically, FIG. 8B is an enlarged cross-sectional view of the end of the metal layer shown in FIG. 8A.

Referring to FIG. 8A , the protective layer 240 may not be disposed on at least a portion of the first organic insulating layer 209 adjacent to the end of the metal layer 230. In other words, the protective layer 240 may not be disposed on at least a portion of the first organic insulating layer 209 adjacent to the point where the metal layer 230 and the first organic insulating layer 209 meet. Since the protective layer 240 is not disposed on at least a portion of the first organic insulating layer 209 adjacent to the end of the metal layer 230, gas generated from the first organic insulating layer 209 during the manufacturing process of the display device ( Alternatively, outgas may be discharged to the outside, and as a result, defects may not occur in the first organic insulating layer 209.

The process of forming the end of the metal layer 230 and the groove GR of the first organic insulating layer 209 may include a first process and a second process. The first process may be a process of forming an end of the metal layer 230 by etching at least a portion of the metal layer 230 disposed in contact with the upper surface of the first organic insulating layer 209. The second process may be a process of forming a groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. In terms of time, the second process may be performed after the first process. However, the present invention is not limited to this. In the first process of etching at least a portion of the metal layer 230 to form an end portion of the metal layer 230, at least a portion of the first organic insulating layer 209 is also etched to form a groove of the first organic insulating layer 209. (GR) may be formed.

The shortest distance (t2) from the lower surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 is that the end of the metal layer 230 from the first organic insulating layer 209 is the first organic insulating layer ( It may be larger than the protruding length t1 in the direction toward the groove GR of 209). The depth of the groove (GR), which is the shortest distance (t2) from the lower surface of the metal layer 230 to the groove (GR) of the first organic insulating layer 209, is disposed in contact with the upper surface of the first organic insulating layer 209. A process (or first process) of forming an end of the metal layer 230 by etching at least a portion of the metal layer 230 and etching at least a portion of the first organic insulating layer 209 to form the first organic insulating layer 209. In the process (or second process) of forming the groove GR, the first organic insulating layer 209 may be etched to a depth t2 in the third direction (for example, z direction or -z direction). there is. The length t1 of the end of the metal layer 230 protruding in the direction toward the groove GR of the first organic insulating layer 209 is the first length t1 to form the groove GR of the first organic insulating layer 209. In the process (or second process) of etching at least a portion of the organic insulating layer 209, the length ( It may be t1). The shortest distance (or the depth of the groove (GR)) from the bottom of the metal layer 230 to the groove (GR) of the first organic insulating layer 209 is the first process and the second process, that is, two processes are performed. While the first organic insulating layer 209 is etched in the third direction (e.g., z direction or -z direction) to a length t2, the end of the metal layer 230 is etched in the first organic insulating layer 209. ) The length t1 protruding in the direction toward the groove GR is such that the first organic insulating layer 209 moves in the first direction (for example, the Since the length (t1) etched in the x direction), the shortest distance (t2) from the bottom surface of the metal layer 230 to the groove (GR) of the first organic insulating layer 209 is The end of 230 may be larger than the protruding length t1 in the direction toward the groove GR of the first organic insulating layer 209 .

The length t1 of the end of the metal layer 230 protruding in the direction toward the groove GR of the first organic insulating layer 209 may be 2.0 um or less. When the end of the metal layer 230 protrudes in the direction toward the groove GR of the first organic insulating layer 209 (t1) exceeds 2.0 um, the end of the metal layer 230 is projected in the first direction (for example, For example, the length t1 in the x direction or -x direction becomes longer, so that during the manufacturing process of the display device, the end of the metal layer 230 is stressed, and at least a portion of the end of the metal layer 230 is damaged. You can.

The thickness (t3) of the metal layer 230 is 300 It could be more than that. The thickness (t3) of the metal layer 230 is 300. If it is less than that, after the first process of etching the metal layer 230, the first organic insulating layer 209 is etched to form the groove GR of the first organic insulating layer 209 and the end of the metal layer 230. In the second process, the metal layer 230 may not be able to withstand stress and may break.

Referring to FIG. 8B, the metal layer 230 may include a first layer 230a, a second layer 230b, and a third layer 230c. The third layer 230c may be stacked on the first layer 230a, and the second layer 230b may be interposed between the first layer 230a and the third layer 230c. The first layer 230a may include titanium (Ti), the second layer 230b may include aluminum (Al), and the third layer 230c may include titanium (Ti). . In the process (or first process and second process) of etching at least a portion of the metal layer 230 and at least a portion of the first organic insulating layer 209, the first layer 230a and the second layer 230b are Because the materials they contain are different, the degree to which the first layer 230a and the second layer 230b are etched may be different, and the first layer 230a may be more sensitive to the first organic insulating layer 209 than the second layer 230b. ) may protrude in the direction toward the groove. In other words, a step may occur between the first layer 230a and the second layer 230b included in the metal layer 230.

The protective layer 240 may cover the top and side surfaces of the metal layer 230 . The protective layer 240 may also cover the step between the first layer 230a and the second layer 230b included in the metal layer 230. A protective layer may also be covered on the sides of the steps between the first layer 230a and the second layer 230b that occur in the process of etching the metal layer 230 and the first organic insulating layer 209, so that in the subsequent process, the metal layer ( When the second layer 230b included in 230 is exposed to an etchant or developer, the second layer 230b of the metal layer 230 may be further etched to prevent defects from occurring in subsequent layers.

9 to 15 are cross-sectional views schematically showing a method of manufacturing a display device. Hereinafter, a method of manufacturing a display device will be described with reference to FIGS. 9 to 15 .

A method of manufacturing the display device 1 according to an embodiment includes an opening area (OA), a display area (DA) at least partially surrounding the opening area (OA), and an intermediate area between the opening area (OA) and the display area (DA). Forming an inorganic insulating layer (IIL) on the substrate 100 including the area (MA), at least a portion of the inorganic insulating layer (IIL) in the middle area (MA) is removed to form holes (H(IIL)). Forming step, forming the first organic insulating layer 209 in the holes (H(IIL)) of the inorganic insulating layer (IIL), forming the metal layer 230 on the first organic insulating layer 209. A step of etching at least a portion of the metal layer 230 formed on top of the holes H(IIL) of the inorganic insulating layer (IIL) to form ends in the metal layer 230, and forming ends on the metal layer 230. It may include forming a protective layer 240 that covers the top and side surfaces of the ends of the metal layer 230.

Referring to FIG. 9, a buffer layer 105, a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, and a fourth insulating layer 207 are sequentially formed on the substrate 100. ) can be formed. The buffer layer 105, the first insulating layer 201, the second insulating layer 203, the third insulating layer 205, and the fourth insulating layer 207 are each made of silicon oxide, silicon nitride, and silicon oxynitride. , and may include inorganic insulating materials such as aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. However, the present invention is not limited to this. Although not shown, in another embodiment, a fifth insulating layer may be disposed on the fourth insulating layer 207.

In one embodiment, at least a portion of the third insulating layer 205 and the fourth insulating layer 207 is removed, thereby forming a hole (H(IIL) penetrating the third insulating layer 205 and the fourth insulating layer 207. )) can be defined. However, the present invention is not limited to this. When the fifth insulating layer is disposed on the fourth insulating layer 207, at least a portion of the fourth insulating layer 207 and the fifth insulating layer are removed to form the fourth insulating layer 207 and the fifth insulating layer. A penetrating hole (H(IIL)) may be defined.

Referring to FIG. 10 , the holes H(IIL) defined in the inorganic insulating layer IIL may be filled with the first organic insulating layer 209. In order to fill the holes H(IIL) defined in the inorganic insulating layer IIL with the first organic insulating layer 209, a material for forming the first organic insulating layer may be disposed on the substrate 100. there is. Light can be irradiated to the portion filled with the hole (H(IIL)) of the inorganic insulating layer (IIL) among the materials for forming the first organic insulating layer, and light is not irradiated to the remaining portion of the material for forming the first organic insulating layer. It may not be possible. Among the materials for forming the first organic insulating layer, the portion irradiated with light hardens, and the portion not irradiated with light can be removed. Among the materials for forming the first organic insulating layer, the first organic insulating layer 209 fills the holes of the inorganic insulating layer (IIL) by irradiating only the portion filled with the holes (H(IIL)) of the inorganic insulating layer (IIL) with light. can be formed. However, the present invention is not limited to this.

11 to 14 show the process of forming ends in the metal layer 230 disposed on the first organic insulating layer 209 and the process of forming the ends of the first organic insulating layer 209 disposed on the lower surface of the metal layer 230 in the process. This shows the process of forming a groove (GR) by etching at least part of it at the same time. However, the present invention is not limited to this. After the first process of etching at least part of the metal layer to form an end of the metal layer, a second process of etching at least part of the first organic insulating layer to form a groove of the first organic insulating layer may be performed.

11 to 13 and 14B, a metal layer 230 may be disposed on the first organic insulating layer 209. Specifically, a metal layer may be disposed on the first organic insulating layer 209 and the fourth insulating layer 207. As described above, the metal layer 230 may be formed as a multilayer of Ti/Al/Ti.

In one embodiment, at least a portion of the metal layer 230 may be etched to form ends in the metal layer 230 . Specifically, at least a portion of the metal layer 230 disposed on the top of the first organic insulating layer 209 filled with the holes H(IIL) of the inorganic insulating layer (IIL) is etched to form ends of the metal layer 230. can be formed.

In order for at least a portion of the metal layer 230 formed on the holes H(IIL) of the inorganic insulating layer (IIL) to be etched to form ends in the metal layer 230, a photoresist (PR) is applied on the metal layer 230. can be placed. The photoresist PR disposed on at least a portion of the metal layer 230 formed on top of the holes H(IIL) of the inorganic insulating layer IIL may be removed. In other words, the photoresist (PR) disposed on the portion of the metal layer 230 to be removed may be removed. The portion of the metal layer 230 from which the photoresist (PR) has been removed may be etched and removed to form ends in the metal layer 230. In other words, at least a portion of the metal layer 230 formed on top of the holes H(IIL) of the inorganic insulating layer IIL may be etched to form ends of the metal layer 230. Specifically, at least a portion of the metal layer 230 formed on top of the holes H(IIL) of the inorganic insulating layer IIL may be removed by dry etching. The ends of the metal layer 230 may be disposed to be spaced apart from each other on top of the holes H(IIL) of the inorganic insulating layer IIL. As ends are formed in the metal layer 230, the functional layers 222a and 222c and the counter electrode 223 extending from the display area DA to the middle area MA may be short-circuited at the ends of the metal layer 230. . The protective layer 240 may also be shorted at ends of the metal layer 230. The functional layers (222a, 222c) and the counter electrode 223 are short-circuited at the ends of the metal layer 230, and the functional layers (222a, 222c) and the counter electrode 223 in the middle area (MA) are exposed to external moisture or air. It is possible to prevent penetration into the display area (DA).

When at least a portion of the metal layer 230 formed on top of the holes H(IIL) of the inorganic insulating layer IIL is etched to form ends in the metal layer 230, the first metal layer 230 disposed below the metal layer 230 At least a portion of the organic insulating layer 209 may be etched simultaneously to form a groove GR in the first organic insulating layer 209 . When at least a portion of the metal layer 230 is dry etched to form an end in the metal layer 230, the etching of the first organic insulating layer 209 disposed below the metal layer 230 progresses more quickly than the metal layer 230. You can. Specifically, in the etching process, the length (t1) by which the ends of the metal layer 230 protrude from the first organic insulating layer 209 in the first direction (for example, x direction or -x direction) is 0.3㎛. At this time, the length t2 of the groove GR of the first organic insulating layer 209 in a direction perpendicular to the substrate 100 (eg, z direction or -z direction) may be 0.675 ㎛. In other words, a length (t1) equal to the extent to which the ends of the metal layer 230 protrude from the first organic insulating layer 209 in the first direction (for example, x direction or -x direction) during the etching process and the first The ratio of the length t2 of the groove GR of the organic insulating layer 209 in a direction perpendicular to the substrate 100 (eg, z direction or -z direction) may be 1:2.25. However, the present invention is not limited to this.

After the metal layer 230 and the first organic insulating layer 209 are etched simultaneously to form grooves GR at the ends of the metal layer 230 and the first organic insulating layer 209, respectively, the photoresist PR is removed. You can. However, the present invention is not limited to this.

In one embodiment, referring to FIGS. 14A and 14B , the process of forming the end of the metal layer 230 and the first organic insulating layer 209 may include a first process and a second process. The first process may be a process of forming an end of the metal layer 230 by etching at least a portion of the metal layer 230 disposed in contact with the upper surface of the first organic insulating layer 209. The second process may be a process of forming a groove of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. In terms of time, the second process may be performed after the first process. Since the first process and the second process each remove the metal layer 230 and the first organic insulating layer 209, the etchants used in the first process and the second process may be different.

The shortest distance (t2) from the bottom of the metal layer 230 to the groove of the first organic insulating layer 209 is the end of the metal layer 230 from the first organic insulating layer 209. It may be larger than the protruding length in the direction toward the groove. The depth t2 of the groove GR, which is the shortest distance from the lower surface of the metal layer 230 to the groove GR of the first organic insulating layer 209, is disposed in contact with the upper surface of the first organic insulating layer 209. A process (or first process) of forming an end of the metal layer 230 by etching at least a portion of the metal layer 230 and etching at least a portion of the first organic insulating layer 209 to form the first organic insulating layer 209. In the process (or second process) of forming the groove GR, the first organic insulating layer 209 may be etched to a depth t2 in the third direction (for example, z direction or -z direction). there is. The length t1 of the end of the metal layer 230 protruding in the direction toward the groove GR of the first organic insulating layer 209 is the first length t1 to form the groove GR of the first organic insulating layer 209. In the process (or second process) of etching at least a portion of the organic insulating layer 209, the length ( It may be t1). The shortest distance (t2) (or groove depth) from the bottom of the metal layer 230 to the groove GR of the first organic insulating layer 209 is the first process and the second process, that is, two processes are performed. While the length of the first organic insulating layer 209 is etched in the third direction (e.g., z direction or -z direction), the end of the metal layer 230 is grooved in the first organic insulating layer 209. The protruding length t1 in the direction facing (GR) is such that the first organic insulating layer 209 moves in the first direction (for example, x direction or -x direction) during the second process, that is, one process. Since the length is etched to It may be larger than the protruding length t1 in the direction toward the groove GR of the layer 209.

Referring to FIG. 15, a protective layer 240 may be disposed on the metal layer 230 and the first organic insulating layer 209. The protective layer 240 may be formed by patterning simultaneously with the pixel electrode 221 of the organic light emitting diode (OLED) disposed in the display area DA, and the protective layer 240 may be made of the same material as the pixel electrode 221. It can be included. As described above, the protective layer 240 is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium oxide (In ₂ O ₃ : It may include a conductive oxide such as indium oxide (IGO), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In another embodiment, the protective layer 240 is made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), and neodymium (Nd). , it may include a reflective film containing iridium (Ir), chromium (Cr), or a compound thereof. In another embodiment, the protective layer 240 may further include a film formed of ITO, IZO, ZnO, or In ₂ O ₃ above/below the above-described reflective film.

The protective layer 240 may cover the top and side surfaces of the metal layer 230 . The protective layer 240 is short-circuited by the ends of the metal layer 230, so that the protective layer 240 can also be disposed on the top of the groove GR of the first organic insulating layer 209. The protective layer 240 covers the top and sides of the metal layer 230, thereby preventing defective factors from occurring through reduction of Al (aluminum) of the metal layer 230 with Ag (silver) of the protective layer 240. In this case, the Al (aluminum) of the metal layer 230 is etched by the etchant of another layer in the subsequent process, and an undercut structure is generated between the Al (aluminum) and Ti (titanium) of the metal layer 230, and thus in the subsequent layer. Defects can be prevented from occurring.

Holes H(IIL) are formed in the inorganic insulating layer IIL in the middle area MA of the display panel 10, and the first organic layer fills the holes H(IIL) in the inorganic insulating layer IIL. A groove GR is formed in the insulating layer 209, and the metal layer 230 disposed on the first organic insulating layer 209 may include ends. From the display area DA to the middle area MA by the ends of the metal layer 230 disposed in the middle area MA of the display panel 10 and the grooves GR of the first organic insulating layer 209. The extended functional layers 222a and 222c and the counter electrode 223 can be short-circuited. The functional layers (222a, 222c) and the counter electrode 223 are short-circuited in the middle area (MA), allowing external air or moisture to penetrate into the display area (DA) through the functional layers (222a, 222c) and the counter electrode 223. You can prevent it from happening.

In the process of forming the ends by etching the metal layer 230 disposed on the first organic insulating layer 209, at least a portion of the first organic insulating layer 209 may also be etched simultaneously to form the groove GR. . The ends of the metal layer 230 and the grooves GR of the first organic insulating layer 209 can be formed without an additional mask, thereby reducing the time required for processing the display panel 10 and reducing the time required for processing the display panel 10. Efficiency can be maximized.

A protective layer 240 may be formed on the metal layer 230, and the protective layer 240 may cover the top and side surfaces of the ends of the metal layer 230. By covering the side of the metal layer 230 with the protective layer 240, it is possible to prevent defective factors from occurring through reduction of Al (aluminum) contained in the metal layer 230 with Ag (silver) of the protective layer. , Al (aluminum) of the metal layer 230 is etched by the etchant of another layer in the subsequent process, resulting in an undercut structure between Al (aluminum) and Ti (titanium) of the metal layer 230, resulting in defects in the subsequent layer. You can prevent it from happening.

The present invention has been described with reference to the embodiments shown in the drawings, but these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the attached patent claims.

100: substrate
105: buffer layer
201: first insulating layer
203: second insulating layer
205: third insulating layer
207: fourth insulating layer
209: First organic insulating layer
211: second organic insulating layer
213: Third organic insulating layer

Claims (20)

a substrate including an opening area, a display area at least partially surrounding the opening area, and an intermediate area between the opening area and the display area;
an inorganic insulating layer disposed on the substrate and having defined holes;
a first organic insulating layer filled in the holes and having grooves formed on its upper surface;
a metal layer disposed on the first organic insulating layer and including end portions; and
It includes a protective layer disposed on the metal layer,
Ends of the metal layer are arranged to be spaced apart from each other on top of the grooves,
A display device wherein top and side surfaces of ends of the metal layer are covered with the protective layer. According to paragraph 1,
The display device wherein the protective layer is also disposed on the grooves of the first organic insulating layer. According to paragraph 1,
A display device comprising: a first dam disposed on the middle region. According to paragraph 3,
The holes are defined in the inorganic insulating layer disposed between the display area and the first dam,
The first organic insulating layer filled in the holes includes the grooves on a top surface. According to paragraph 3,
A display device further comprising a second dam disposed between the first dam and the opening area. According to clause 5,
The holes are defined in the inorganic insulating layer disposed between the first dam and the second dam,
The first organic insulating layer filled in the holes includes the grooves on a top surface. According to paragraph 1,
The display device further comprising a second organic insulating layer disposed on the first organic insulating layer. According to clause 5,
The first dam and the second dam include the first organic insulating layer and a second organic insulating layer disposed on the first organic insulating layer. According to clause 5,
The holes are defined in the inorganic insulating layer disposed between the second dam and the opening area,
The first organic insulating layer filled in the holes includes the grooves on a top surface. According to paragraph 1,
A light emitting element including a pixel electrode disposed on the display area, a counter electrode, and a functional layer between the pixel electrode and the counter electrode,
The display device wherein the protective layer and the pixel electrode include the same material. In clause 7,
At the point where the middle area begins in the display area,
The display device wherein the protective layer covers a side surface and a top surface of an end of the metal layer that is in contact with the second organic insulating layer. According to clause 8,
The second organic insulating layer included in the first dam covers the metal layer and the protective layer in contact with the first organic insulating layer included in the first dam. According to clause 8,
The second organic insulating layer included in the second dam covers the metal layer and the protective layer in contact with the first organic insulating layer included in the second dam. forming an inorganic insulating layer on a substrate including an opening area, a display area at least partially surrounding the opening area, and an intermediate area between the opening area and the display area;
forming holes by removing at least a portion of the inorganic insulating layer in the middle region;
forming a first organic insulating layer within the holes of the inorganic insulating layer;
forming a metal layer on the first organic insulating layer;
etching at least a portion of the metal layer formed on top of the holes to form ends in the metal layer; and
Comprising: forming a protective layer on the metal layer,
The protective layer covers the top and side surfaces of the ends of the metal layer. According to clause 14,
In the step of etching at least a portion of the metal layer formed on top of the holes to form ends in the metal layer,
A method of manufacturing a display device, wherein at least a portion of the first organic insulating layer is simultaneously etched to form grooves in the first organic insulating layer. According to clause 15,
The method of manufacturing a display device, wherein the protective layer is also disposed on grooves of the first organic insulating layer. According to clause 15,
A method of manufacturing a display device, wherein ends of the metal layer are formed to be spaced apart from each other on top of the grooves. According to clause 14,
The step of etching at least a portion of the metal layer formed on top of the holes to form ends in the metal layer,
Disposing a photoresist on the metal layer;
removing photoresist disposed on at least a portion of the metal layer formed on top of the holes;
etching and removing at least a portion of the metal layer formed on top of the holes; and
A method of manufacturing a display device, including the step of removing the photoresist. According to clause 14,
A method of manufacturing a display device, wherein the protective layer is formed simultaneously with the pixel electrode of the light emitting element disposed in the display area. According to clause 19,
A method of manufacturing a display device, wherein the protective layer and the pixel electrode include the same material.

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