CN118076161A

CN118076161A - Display device

Info

Publication number: CN118076161A
Application number: CN202311491171.4A
Authority: CN
Inventors: 李宗璨; 梁容豪; 李珍淑; 太胜奎
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2022-11-22
Filing date: 2023-11-10
Publication date: 2024-05-24

Abstract

A display device is provided. The display device includes a substrate including an opening region, a display region surrounding at least a portion of the opening region, and an intermediate region between the opening region and the display region, an inorganic insulating layer on the substrate and defining a hole, a first organic insulating layer filling the hole and having a groove formed in a top surface thereof, a metal layer disposed on the first organic insulating layer and including a plurality of end portions, and a protective layer on the metal layer, wherein the plurality of end portions of the metal layer are disposed over the groove separately from each other, and top and side surfaces of the plurality of end portions of the metal layer are covered by the protective layer.

Description

Display device

Cross Reference to Related Applications

The present application is based on and claims priority of korean patent application No. 10-2022-0157503 filed in the korean intellectual property office at 11/22/2022 and korean patent application No. 10-2023-0105089 filed in 10/8/2023, the disclosures of which are incorporated herein by reference in their entireties.

Technical Field

The present disclosure relates to a display device and a method of manufacturing the display device.

Background

Recently, display devices have been used in various ways. In addition, the display device tends to be more widely used due to its reduced thickness and light weight.

According to an increase in the area occupied by the display area in the display device, various functions added or linked to the display device are increasing. As a solution to add various functions while enlarging the area of the display device, a display device in which various components in a display area can be arranged has been studied.

Disclosure of Invention

A display device having an opening region that can be used for various purposes may be provided, and for example, various components may be arranged in the display region of the display device of the present disclosure. However, this is merely an example, and the scope of the present disclosure is not limited thereto.

Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the presently presented embodiments of the disclosure.

According to aspects of the embodiments, a display device includes a substrate including an opening region, a display region surrounding at least a portion of the opening region, and an intermediate region between the opening region and the display region, an inorganic insulating layer disposed on the substrate and defining a hole, a first organic insulating layer filling the hole and having a groove formed in a top surface thereof, a metal layer disposed on the first organic insulating layer and including a plurality of end portions, and a protective layer on the metal layer, wherein the plurality of end portions of the metal layer are disposed over the groove separately from each other, and top and side surfaces of the plurality of end portions of the metal layer are covered by the protective layer.

According to one or more embodiments, a protective layer may also be disposed over the grooves of the first organic insulating layer.

According to one or more embodiments, the display device may further include a first dam in the middle region.

According to one or more embodiments, the hole is defined in the inorganic insulating layer between the display region and the first dam, and a portion of the first organic insulating layer filling the hole may include a groove in a top surface of the first organic insulating layer.

According to one or more embodiments, the display device may further include a second dam between the first dam and the opening area.

According to one or more embodiments, the hole is defined in the inorganic insulating layer between the first and second dams, and the portion of the first organic insulating layer filling the hole may include a groove in a top surface of the first organic insulating layer.

According to one or more embodiments, the first and second dams may comprise the same material.

According to one or more embodiments, the hole is defined in the inorganic insulating layer between the second dam and the opening region, and the portion of the first organic insulating layer filling the hole may include a groove in a top surface of the first organic insulating layer.

According to one or more embodiments, the display device may include a third dam between the second dam and the opening area.

According to one or more embodiments, a display apparatus may include a light emitting device including a pixel electrode and an opposite electrode in a display region and a functional layer between the pixel electrode and the opposite electrode.

According to one or more embodiments, the protective layer and the pixel electrode may include the same material.

According to one or more embodiments, the functional layer may extend from the display region to the middle region, and may be shorted by a plurality of end portions of the metal layer.

According to one or more embodiments, the opposite electrode may extend from the display region to the middle region, and the opposite electrode may be shorted by end portions of the metal layer.

According to another aspect, a method of manufacturing a display device includes: forming an inorganic insulating layer on a substrate including an opening region, a display region surrounding at least a portion of the opening region, and an intermediate region between the opening region and the display region; forming a hole by removing at least a portion of the inorganic insulating layer of the intermediate region; forming a first organic insulating layer in the hole in the inorganic insulating layer; forming a metal layer on the first organic insulating layer; forming a plurality of end portions of the metal layer by etching at least a portion of the metal layer formed over the holes; and forming a protective layer on the metal layer, and the protective layer covers top surfaces and side surfaces of the plurality of end portions of the metal layer.

According to one or more embodiments, in a process of forming a plurality of end portions of a metal layer by etching at least a portion of the metal layer formed over a hole, at least a portion of a first organic insulating layer may be etched simultaneously, and a groove may be formed in the first organic insulating layer.

According to one or more embodiments, the plurality of end portions of the metal layer may be arranged above the groove separately from each other.

According to one or more embodiments, forming the plurality of end portions of the metal layer by etching at least a portion of the metal layer formed over the holes may include: disposing a photoresist over the metal layer; removing the photoresist disposed on at least a portion of the metal layer formed over the hole; etching and removing at least a portion of the metal layer formed over the hole; and removing the photoresist.

According to one or more embodiments, the protective layer may be formed simultaneously with the pixel electrode of the light emitting device disposed in the display region.

Drawings

The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description when taken in conjunction with the accompanying drawings in which:

Fig. 1 is a perspective view schematically showing a display device according to an embodiment;

Fig. 2 is a cross-sectional view schematically showing a display device according to an embodiment;

Fig. 3 is a top view schematically showing a display device according to an embodiment;

Fig. 4 is an equivalent circuit diagram schematically showing any one pixel in the display device according to the embodiment;

Fig. 5 is a top view schematically showing a portion of a display device according to an embodiment;

fig. 6 is a cross-sectional view schematically showing a display device according to an embodiment;

Fig. 7A to 7C are views schematically showing a display device according to an embodiment;

fig. 8A and 8B are cross-sectional views schematically showing enlarged images of regions in a display device according to an embodiment; and

Fig. 9 to 15 are cross-sectional views schematically illustrating a method of manufacturing a display device.

Detailed Description

Reference will now be made in detail to implementations as examples illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may take various forms and should not be construed as limited to the descriptions set forth herein. Accordingly, the embodiments are described below only by referring to the drawings to explain aspects of the present description. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression "at least one of a, b and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b and c, or variants thereof.

In the embodiments set forth herein, terms such as "first," "second," and the like are not used to limit the disclosure and are used merely to distinguish one component from another.

In the embodiments set forth herein, the expression used in the singular encompasses the plural unless the context has a significantly different meaning.

In the embodiments set forth herein, terms such as "include," "having," and "including" are intended to indicate the presence of a feature or element, and are not intended to exclude the possibility that one or more other features or elements may be added.

In the embodiments set forth herein, when a portion such as a film, region, or component is on or over another film, region, or component, the portion may be directly on the other portion, or intervening portions may be present therebetween.

The sizes of the components in the drawings may be exaggerated for convenience of explanation. For example, since the sizes and thicknesses of components in the drawings are arbitrarily shown for convenience of explanation, the present disclosure is not necessarily limited thereto.

When the embodiments may be implemented in another manner, the specific process sequence may be different from that described. For example, two consecutively described processes may be performed substantially simultaneously or in reverse order of the order described.

In this specification, "a and/or B" indicates A, B, or a and B. "at least one of A and B" indicates A, B, or A and B.

In the embodiments set forth herein, when films, regions, components, and the like are mentioned to be connected to each other, the films, regions, components may be directly connected to each other, or may be indirectly connected to each other through other intervening components. For example, when films, regions, components, and the like in this specification are electrically connected to each other, the films, regions, and components may be directly electrically connected to each other, or may be indirectly electrically connected to each other through other intervening components.

The x-direction, y-direction, and z-direction are not limited to directions corresponding to three axes of a rectangular coordinate system, and can be interpreted in a broader sense. For example, the x-direction, y-direction, and z-direction may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. Herein, the x-direction may mean a +x-direction and/or a-x-direction, the y-direction may mean a +y-direction and/or a-y-direction, and the z-direction may mean a +z-direction and/or a-z-direction.

Fig. 1 is a perspective view schematically showing a display device 1 according to an embodiment.

Referring to fig. 1, a display device 1, which is a device configured to display video or still images, may be used as a display screen of various products such as televisions, notebook computers, monitors, billboards, internet of things (IOT) based devices, and mobile electronic devices such as mobile phones, smart phones, tablet personal computers, mobile communication terminals, electronic notebooks, electronic books, portable Multimedia Players (PMPs), navigation systems, and Ultra Mobile PCs (UMPCs). Further, the display device 1 according to the embodiment may be used for wearable devices such as a smart watch, a watch phone, and a Head Mounted Display (HMD). Further, the display device 1 according to the embodiment may be used as an instrument panel of a vehicle, a Center Information Display (CID) arranged on the instrument panel, an endoscope display for replacing a side view mirror of a vehicle, an entertainment device for a passenger in a rear seat of a vehicle, or a display arranged on a rear surface of a front seat. The electronic device is bendable, foldable or crimpable. For convenience of explanation, fig. 1 shows that the display apparatus 1 according to the embodiment is used as a smart phone.

In a plan view, the display device 1 may have a rectangular shape. For example, as shown in fig. 1, the display device 1 may have a rectangular planar shape with a short side in the x-direction and a long side in the y-direction. The corners where the short sides in the x-direction and the long sides in the y-direction intersect each other may be formed in a circular shape having a specific curvature, or may be formed in a right angle. The planar shape of the display device 1 is not limited to a rectangle, and may be formed in other polygonal, elliptical, or amorphous shapes.

The display device 1 may include an opening area OA and a display area DA at least partially surrounding the opening area OA. The display device 1 may include a middle area MA between the opening area OA and the display area DA, and a peripheral area PA surrounding the periphery of the display area DA. The middle area MA and the peripheral area PA may each correspond to a non-display area where no light is emitted.

The opening area OA may be inside the display area DA. As an embodiment, as shown in fig. 1, the opening area OA may be disposed in the middle of the top of the display area DA. Alternatively, the opening area OA may be disposed at various positions, for example, a center of the display area DA, an upper left portion of the display area DA, or an upper right portion of the display area DA. In the top view of the present specification, "left", "right", "upper" and "lower" indicate directions when the display device 1 is viewed in a direction perpendicular to the display device 1 (for example, the z direction). For example, "left" indicates the-x direction, "right" indicates the +x direction, "up" indicates the +y direction, and "down" indicates the-y direction. Although fig. 1 shows that only one opening area OA is arranged, as another embodiment, a plurality of opening areas OA may be provided.

Fig. 2 is a sectional view schematically showing the display device 1 according to the embodiment. More specifically, FIG. 2 shows a cross section taken along line I-I' shown in FIG. 1.

Referring to fig. 2, the display device 1 may include a display panel 10 and a member 70 disposed in an opening area OA of the display panel 10. The display panel 10 and the components 70 may be accommodated in the case HS.

The display panel 10 may include a substrate 100, a display layer 200, an encapsulation layer 300, an input sensing layer 400, an optical function layer 500, and a cover window 600.

The display layer 200 may include a light emitting element (e.g., a light emitting diode) configured to emit light to display an image, and a circuit element electrically connected to the light emitting element and including a transistor.

The encapsulation layer 300 may encapsulate the light emitting elements of the display layer 200. As an embodiment, the encapsulation layer 300 may include an inorganic encapsulation layer and an organic encapsulation layer. As another embodiment, the encapsulation layer 300 may include a sealing substrate facing the substrate 100 included in the display panel 10 and including substantially the same material as that included in the substrate 100.

The input sensing layer 400 may obtain coordinate information according to an external input (e.g., a touch event). The input sensing layer 400 may include a sensing electrode (or touch electrode) and a trace connected thereto. The input sensing layer 400 may be above the display layer 200. The input sensing layer 400 may sense an external input in a mutual capacitance method and/or a self capacitance method.

The input sensing layer 400 may be formed directly over the display layer 200, or may be formed separately and then bonded to the display layer 200 through an adhesive layer such as an optically transparent adhesive. For example, the input sensing layer 400 may be sequentially formed after the process of forming the display layer 200, and in this case, the adhesive layer may not be between the input sensing layer 400 and the display layer 200. Although fig. 2 shows the input sensing layer 400 between the display layer 200 and the optical function layer 500, as another embodiment, the input sensing layer 400 may be on the optical function layer 500.

The optical function layer 500 may include an anti-reflection layer. The reflection preventing layer may reduce the reflectivity of light (external light) incident to the display panel 10 from the outside through the cover window 600. The anti-reflection layer may include a retarder and a polarizer.

As another embodiment, the anti-reflection layer may include a black matrix and a color filter. The color filters may be arranged in consideration of the color of light emitted from each of the light emitting diodes of the display layer 200. As another embodiment, the anti-reflection layer may include a destructive interference structure. The destructive interference structure may comprise a first reflective layer and a second reflective layer disposed on different layers, respectively. The first reflected light and the second reflected light reflected from the first reflective layer and the second reflective layer, respectively, may undergo destructive interference, and thus, the reflectivity of the external light may be reduced.

The optical function layer 500 may include a lens layer. The lens layer may improve the emission efficiency of light emitted from the display layer 200 or reduce color deviation of the light. The lens layer may include a layer having a concave or convex lens shape and/or a plurality of layers each having a different refractive index. The optical function layer 500 may include both the above-described reflection preventing layer and the lens layer, or may include any one of them.

Any one selected from the substrate 100, the display layer 200, the encapsulation layer 300, the input sensing layer 400, and the optical function layer 500 may include a via hole. As an embodiment, fig. 2 illustrates that the substrate 100, the display layer 200, the encapsulation layer 300, the input sensing layer 400, and the optical function layer 500 include first through holes to fifth through holes (i.e., first through hole 100H, second through hole 200H, third through hole 300H, fourth through hole 400H, and fifth through hole 500H), respectively. The first through hole 100H, the second through hole 200H, the third through hole 300H, the fourth through hole 400H, and the fifth through hole 500H may overlap each other in the opening area OA.

The first via hole 100H may penetrate the bottom surface of the substrate 100 from the top surface of the substrate 100, and the second via hole 200H may penetrate the bottom surface of the display layer 200 from the top surface of the display layer 200. The third via 300H may penetrate the bottom surface of the encapsulation layer 300 from the top surface of the encapsulation layer 300, and the fourth via 400H may penetrate the bottom surface of the input sensing layer 400 from the top surface of the input sensing layer 400. The fifth via 500H may be a via penetrating the bottom surface of the optical function layer 500 from the top surface of the optical function layer 500. The first through hole 100H, the second through hole 200H, the third through hole 300H, the fourth through hole 400H, and the fifth through hole 500H may be positioned to overlap each other in the opening area OA. The first through hole 100H, the second through hole 200H, the third through hole 300H, the fourth through hole 400H, and the fifth through hole 500H may have the same size or different sizes.

The cover window 600 may be over the optical function layer 500. The cover window 600 may be bonded to the optical functional layer 500 by an adhesive layer such as an Optically Clear Adhesive (OCA) between the cover window 600 and the optical functional layer 500.

The cover window 600 may include a glass material or a plastic material. For example, the cover window 600 may comprise an ultra-thin glass window. For example, the cover window 600 may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, or the like.

The opening area OA may include one component area (e.g., a sensor area, a camera area, a speaker area, and the like) where the component 70 is configured to add various functions to the display apparatus 1. The part 70 may overlap the first through hole 100H of the substrate 100 under the display panel 10. For example, the component 70 may be on the bottom surface of the substrate 100.

The component 70 may include electronic components. For example, the component 70 may include electronic components that use light or sound. For example, the electronic components may include a sensor using light (e.g., an infrared sensor), a camera configured to collect light and capture images, a sensor configured to measure distance or identify fingerprints and the like by outputting and sensing light or sound, a small lamp configured to output light, a speaker configured to output sound, or the like. The electronic component using light may use light of various wavelength bands, such as visible light, infrared light, ultraviolet light, and the like. Light and/or sound output from the component 70 to the outside or traveling from the outside toward the component 70 may travel through the opening area OA.

As another embodiment, when the display device 1 is used as a smart watch or a dashboard of a vehicle, the part 70 may be used as a member including a pointer or a pointer indicating specific information (e.g., a speed of the vehicle). In this case, unlike the one shown in fig. 2, for the member 70 such as a pointer exposed to the outside, the cover window 600 may include an opening in the opening area OA. Alternatively, when the display device 1 includes the member 70 as a speaker, the cover window 600 may include an opening corresponding to the opening area OA.

Fig. 3 is a top view schematically showing the display device 1 according to the embodiment, and fig. 4 is an equivalent circuit diagram schematically showing any one pixel of the display device 1 according to the embodiment.

Referring to fig. 3, the display device 1 may include an opening area OA, a display area DA, a middle area MA, and a peripheral area PA. Fig. 3 can be understood as an image of the substrate 100 in the display device 1. For example, it is understood that the substrate 100 has an opening area OA, a display area DA, a middle area MA, and a peripheral area PA.

The display device 1 includes a plurality of sub-pixels P arranged in a display area DA. As shown in fig. 4, each of the sub-pixels P may include a pixel circuit PC and an organic light emitting diode OLED as a display element connected to the pixel circuit PC. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst. By the organic light emitting diode OLED, each of the sub-pixels P may emit, for example, red light, green light, or blue light, or may emit red light, green light, blue light, or white light.

The second thin film transistor T2, which is a switching thin film transistor, may be connected to the scan line SL and the data line DL, and may transmit the data voltage input from the data line DL to the first thin film transistor T1 based on the switching voltage input from the scan line SL. The storage capacitor Cst may be connected to the second thin film transistor T2 and the driving voltage line PL, and may store a voltage corresponding to a difference between the data voltage transferred from the second thin film transistor T2 and the first power voltage ELVDD supplied to the driving voltage line PL.

The first thin film transistor T1, which is a driving thin film transistor, may be connected to the driving voltage line PL and the storage capacitor Cst, and may control a driving current flowing from the driving voltage line PL through the organic light emitting diode OLED in response to a value of a voltage stored in the storage capacitor Cst. The organic light emitting diode OLED may emit light having a specific brightness by a driving current. An opposite electrode (e.g., cathode) of the organic light emitting diode OLED may receive the second power supply voltage ELVSS.

Although the pixel circuit PC including two thin film transistors and one storage capacitor is described with reference to fig. 4, the present disclosure is not limited thereto. The number of thin film transistors and the number of storage capacitors may be variously modified according to the design of the pixel circuit PC. For example, the pixel circuit PC may include four, five, or more thin film transistors in addition to the two thin film transistors described above.

Referring again to fig. 3, the middle area MA may surround the opening area OA in a plane. The middle area MA is an area where no display element such as an organic light emitting diode emitting light is arranged, and a signal line supplying a signal to the sub-pixel P arranged around the opening area OA may pass through the middle area MA. In the peripheral area PA, a scan driver 1100 configured to supply a scan signal to each of the sub-pixels P, a data driver 1200 configured to supply a data voltage to each of the sub-pixels P, a main power supply wiring (not shown) configured to supply a first power supply voltage ELVDD and a second power supply voltage ELVSS, and the like may be arranged. Although fig. 4 shows that the data driver 1200 is adjacent to one side of the substrate 100, according to another embodiment, the data driver 1200 may be disposed on a Flexible Printed Circuit Board (FPCB) electrically connected to a pad disposed at one side of the display device 1.

Fig. 5 is a plan view schematically showing a portion of the display device 1 according to the embodiment. Fig. 5 shows the opening area OA of the display device 1, the middle area MA surrounding the opening area OA, and the display area DA surrounding the middle area MA.

Referring to fig. 5, the sub-pixels P are disposed in the display area DA, and the middle area MA may be between the opening area OA and the display area DA. The subpixels P may be arranged to surround the opening area OA and the middle area MA in the display area DA.

The sub-pixel P, which is the smallest area emitting light, includes an area emitting red, green, or blue light, and may emit light through a light emitting element, such as a Light Emitting Diode (LED). The position of the sub-pixel P may correspond to the position of a Light Emitting Diode (LED). The arrangement of the sub-pixels P in the display area DA may indicate that Light Emitting Diodes (LEDs) are arranged in the display area DA.

The subpixels P (e.g., light Emitting Diodes (LEDs)) adjacent to the opening area OA may be disposed apart from each other with respect to the opening area OA on a plane. The subpixels P, for example, light Emitting Diodes (LEDs), may be arranged to be separated up and down with respect to the opening area OA, or may be arranged to be separated left and right with respect to the opening area OA.

Grooves GR may be disposed separately from each other in the intermediate area MA. Each of the grooves GR may have a closed loop shape in a plane (e.g., as viewed from a direction perpendicular to the top surface of the substrate 100 (e.g., refer to fig. 6)). In some embodiments, the grooves GR may be arranged in concentric circles, as shown in fig. 5.

In the intermediate area MA, a plurality of dams D may be arranged. The dam D may have a closed loop shape in a plane. Each of the plurality of dams D may be between grooves GR. In an embodiment, the plurality of dams D may include a first dam D1 and a second dam D2. The first dam D1 and the second dam D2 may be disposed in the middle area MA. The second dam D2 may be closer to the opening area OA than the first dam D1. The first dam D1 may be disposed between the second dam D2 and the display area DA. In other words, the first dam D1 is closer to the display area DA than the second dam D2, and the first dam D1 may be between the second dam D2 and the opening area OA. However, the present disclosure is not limited thereto. In another embodiment, in the display panel 10 (for example, refer to fig. 2), one or three or more dams D may be in the middle area MA. For example, when there are three dams D in the middle area MA of the display panel 10, the dams D may include a first dam D1, a second dam D2, and a third dam.

The plurality of grooves GR may be each between the opening area OA and the second dam D2, between the first dam D1 and the second dam D2, or between the display area DA and the first dam D1. In the embodiment, fig. 5 shows that two grooves GR are between the opening area OA and the second dam D2, one groove GR is between the first dam D1 and the second dam D2, and a plurality of grooves GR are between the display area DA and the first dam D1, but the present disclosure is not limited thereto. For example, four grooves GR may be between the display area DA and the first dam D1. In another embodiment, one or three or more grooves GR may be between the opening area OA and the second dam D2, and two or more grooves GR may be between the first dam D1 and the second dam D2. However, the present disclosure is not limited thereto.

Since the substrate 100 of the display panel 10 includes the first through holes 100H (for example, refer to fig. 2) corresponding to the opening area OA, the opening area OA in the present specification is considered to indicate the first through holes 100H. For example, the groove GR between the dam D and the opening area OA may indicate that the groove GR is between the dam D and the first through hole 100H.

Fig. 6 is a sectional view schematically showing the display device 1 according to the embodiment; fig. 6 corresponds to a sectional view taken along the line II-II' shown in fig. 5.

Referring to fig. 6, the substrate 100 may include a glass material or a polymer resin. When the substrate 100 includes a polymer resin, the substrate 100 may include a polymer resin such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, and the like.

Although not shown, the substrate 100 may include a first base layer, a first barrier layer, a second base layer, and a second barrier layer. In an embodiment, the first base layer, the first barrier layer, the second base layer, and the second barrier layer may be sequentially stacked in a direction of a thickness of the substrate 100.

The first and second barrier layers of the barrier layer to prevent penetration of foreign substances may include a single layer or a plurality of layers including an inorganic material such as silicon nitride (SiN _x), silicon oxide (SiO ₂), and/or silicon oxynitride (SiON).

A buffer layer 105 formed to prevent impurities from penetrating into the semiconductor layer Act of the thin film transistor TFT may be on the substrate 100. The buffer layer 105 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single layer or multiple layers including the above inorganic insulating material.

The pixel circuit PC may be disposed on the buffer layer 105. The pixel circuit PC includes a thin film transistor TFT and a storage capacitor Cst. The thin film transistor TFT may include a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE. Although the present embodiment shows a top gate type thin film transistor in which the gate electrode GE is over the semiconductor layer Act with the first insulating layer 201 interposed therebetween, according to another embodiment, the thin film transistor TFT may include a bottom gate type thin film transistor.

The semiconductor layer Act may include polysilicon. Alternatively, the semiconductor layer Act may include amorphous silicon, an oxide semiconductor, an organic semiconductor, and the like. The gate electrode GE may include a low resistance metal material. The gate electrode GE may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and the like, and may be formed in a multi-layer or single-layer including the above materials.

The first insulating layer 201 between the semiconductor layer Act and the gate electrode GE may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, and the like. The first insulating layer 201 may include a single layer or multiple layers including the above materials.

The source electrode SE and the drain electrode DE may include a highly conductive material. The source electrode SE and the drain electrode DE may include a conductive material including Mo, al, cu, ti and the like, and may be formed in a multi-layer or single-layer including the above materials. For example, the source electrode SE, the drain electrode DE, and the data line DL (e.g., refer to fig. 3) may be formed in a multi-layered structure including a titanium layer, an aluminum layer, and a titanium layer (Ti/Al/Ti).

The storage capacitor Cst may include the lower electrode CE1 and the upper electrode CE2 overlapped with each other with the second insulating layer 203 between the lower electrode CE1 and the upper electrode CE 2. The storage capacitor Cst may overlap the thin film transistor TFT. In this regard, fig. 6 shows that the gate electrode GE of the thin film transistor TFT includes the lower electrode CE1 of the storage capacitor Cst. As another embodiment, the storage capacitor Cst may not overlap the thin film transistor TFT. The storage capacitor Cst may be covered by the third insulating layer 205. The upper electrode CE2 of the storage capacitor Cst may include a conductive material including Mo, al, cu, ti and the like, and may include a multi-layer or single layer including the above materials.

A fourth insulating layer 207 may be on the third insulating layer 205. The second insulating layer 203, the third insulating layer 205, and the fourth insulating layer 207 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, and the like. The second insulating layer 203, the third insulating layer 205, and the fourth insulating layer 207 may include a single layer or a plurality of layers including the above materials. However, the present disclosure is not limited thereto. Although not shown, a fifth insulating layer may be on the fourth insulating layer 207. Further, the gate electrode GE may be on the fourth insulating layer 207.

The pixel circuit PC including the thin film transistor TFT and the storage capacitor Cst may be covered with the first organic insulating layer 209. The first organic insulating layer 209 may include a surface whose top is substantially flat.

The pixel circuit PC may be electrically connected to the pixel electrode 221. For example, as shown in fig. 6, the contact metal layer CM may be between the thin film transistor TFT and the pixel electrode 221. The contact metal layer CM may contact the thin film transistor TFT through a contact hole formed in the first organic insulating layer 209, and the pixel electrode 221 may contact the contact metal layer CM through a contact hole formed in the second organic insulating layer 211 on the contact metal layer CM. The contact metal layer CM may include a conductive material including Mo, al, cu, ti and the like, and may be formed as a multi-layer or single-layer including the above materials. As an embodiment, the contact metal layer CM may be formed as a multilayer including Ti/Al/Ti.

The first and second organic insulating layers 209 and 211 may include general polymers such as polymethyl methacrylate (PMMA) or Polystyrene (PS), polymer derivatives having a phenol group, acryl-based polymers, imide-based polymers, arylene-based polymers, amide-based polymers, fluorine-based polymers, para-xylene-based polymers, vinyl alcohol-based polymers, or blends thereof. As an embodiment, the first organic insulating layer 209 and the second organic insulating layer 211 may include polyimide.

The pixel electrode 221 may be formed on the second organic insulating layer 211. The pixel electrode 221 may include a conductive oxide material such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂O₃), indium Gallium Oxide (IGO), or Aluminum Zinc Oxide (AZO). As another embodiment, the pixel electrode 221 may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. As another embodiment, the pixel electrode 221 may further include a film formed of ITO, IZO, znO or In ₂O₃ above/below the reflective film.

The third organic insulating layer 213 may be formed on the pixel electrode 221. The third organic insulating layer 213 may include a pixel defining film defining an emission region of the sub-pixel. The third organic insulating layer 213 may include an opening exposing at least a portion of the top surface of the pixel electrode 221, and may cover an edge of the pixel electrode 221. The third organic insulating layer 213 may include an organic insulating material. Alternatively, the third organic insulating layer 213 may include an inorganic insulating material, such as silicon nitride (SiN _x), silicon oxynitride (SiON), or silicon oxide (SiO _x). Alternatively, the third organic insulating layer 213 may include an organic insulating material and an inorganic insulating material.

The intermediate layer 222 includes an emissive layer 222b. The intermediate layer 222 may include a first functional layer 222a disposed under the emission layer 222b and/or a second functional layer 222c disposed on the emission layer 222b. The emission layer 222b may include a high molecular or low molecular organic material that emits light of a specific color.

The first functional layer 222a may include a single layer or multiple layers. For example, when the first functional layer 222a is formed of a high molecular material, as the Hole Transport Layer (HTL), the first functional layer 222a may be formed of poly ((3, 4) -ethylene-dioxythiophene) (PEDOT) or Polyaniline (PANI). When the first functional layer 222a is formed of a low molecular material, the first functional layer 222a may include a Hole Injection Layer (HIL) and a Hole Transport Layer (HTL).

The second functional layer 222c is not always provided. For example, when the first functional layer 222a and the emission layer 222b are formed of a polymer material, it is desirable to form the second functional layer 222c. The second functional layer 222c may include a single layer or multiple layers. The second functional layer 222c may include an Electron Transport Layer (ETL) and/or an Electron Injection Layer (EIL).

An emission layer 222b from among the intermediate layers 222 may be disposed in each sub-pixel in the display area DA. The emission layer 222b may be patterned to correspond to the pixel electrode 221. Unlike the emission layer 222b, the first functional layer 222a and/or the second functional layer 222c of the intermediate layer 222 may extend toward the middle area MA to be positioned in the middle area MA as well as in the display area DA.

The opposite electrode 223 may include a conductive material having a small work function. For example, the counter electrode 223 may comprise a (semi) transparent layer comprising Ag, mg, al, pt, pd, au, ni, nd, ir, cr, li, ca or an alloy thereof. Alternatively, the opposite electrode 223 may further comprise a layer comprising TIO, IZO, znO or In ₂O₃ on a (semi) transparent layer comprising the above-mentioned materials. The opposite electrode 223 may be formed in the middle area MA as well as in the display area DA. The first functional layer 222a, the second functional layer 222c, and the opposite electrode 223 may be formed by a thermal deposition method.

Although not shown, a cover layer may be on the opposite electrode 223. For example, the cover layer may comprise LiF, and may be formed by a thermal deposition method. In some embodiments, the cover layer may be omitted.

The fourth organic insulating layer 217 may be formed on the third organic insulating layer 213. The fourth organic insulating layer 217 may include an organic insulating material such as polyimide. Alternatively, the fourth organic insulating layer 217 may include an inorganic insulating material, or may include an organic insulating material or an inorganic insulating material.

The fourth organic insulating layer 217 may include the same or different material as that included in the third organic insulating layer 213. As an embodiment, the third organic insulating layer 213 and the fourth organic insulating layer 217 may include polyimide. The third organic insulating layer 213 and the fourth organic insulating layer 217 may be formed together in a mask process using a half-tone mask.

The organic light emitting diode OLED is covered by the encapsulation layer 300. The encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer, and fig. 6 shows that the encapsulation layer 300 includes a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. In other embodiments, the number and stacking order of the organic and inorganic encapsulation layers may be modified.

The first and second inorganic encapsulation layers 310 and 330 may include at least one inorganic material from among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon nitride, and silicon oxynitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include a single layer or multiple layers including the above materials. The organic encapsulation layer 320 may include a polymer-based material. The polymeric material may include: acryl-based resins such as polymethyl methacrylate, polyacrylate, epoxy-based resins, polyimide, polyethylene, and the like. As an embodiment, the organic encapsulation layer 320 may include an acrylate polymer.

The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may each include different materials. For example, the first inorganic encapsulation layer 310 may include silicon oxynitride, and the second inorganic encapsulation layer 330 may include silicon nitride. The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may have different thicknesses. The thickness of the first inorganic encapsulation layer 310 may be greater than the thickness of the second inorganic encapsulation layer 330. Alternatively, the thickness of the second inorganic encapsulation layer 330 may be greater than the thickness of the first inorganic encapsulation layer 310, or the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may have the same thickness.

Fig. 7A to 7C are views schematically showing the display device 1 according to the embodiment. More specifically, fig. 7A schematically illustrates a cross section of the display panel according to an embodiment taken along the line III-III' shown in fig. 5; fig. 7B and 7C are enlarged cross-sectional views schematically illustrating the portions a and B shown in fig. 7A.

Referring to fig. 7A to 7C, the first dam D1, the second dam D2, the groove GR, and the end portion of the metal layer 230 disposed on the groove GR may be disposed in the middle area MA. The plurality of dams D may include a first dam D1 and a second dam D2. However, the present disclosure is not limited thereto. One, three or four or more dams D may be in the intermediate area MA. For example, the third dam may be between the second dam D2 and the opening area OA.

In an embodiment, the first dam D1 and the second dam D2 may include the same material. The first and second dams D1 and D2 may include the second and third organic insulating layers 211 and 213 sequentially stacked. In other words, the first and second dams D1 and D2 may include a structure in which the second and third organic insulating layers 211 and 213 are sequentially stacked. However, the present disclosure is not limited thereto. In another embodiment, a third dam between the second dam D2 and the opening area OA may be provided by the third organic insulating layer 213.

The first and second dams D1 and D2 may be provided at relatively high heights. Since the first and second dams D1 and D2 are provided to have relatively high heights, overflow of the monomer forming the organic encapsulation layer 320 toward the dividing line may be reduced or prevented as much as possible. Although fig. 7A illustrates that the first dam D1 prevents the overflow of the monomer forming the organic encapsulation layer 320, the present disclosure is not limited thereto. In another embodiment, the second dam D2 may prevent the overflow of the monomer forming the organic encapsulation layer 320.

In an embodiment, the first dam D1 may be between the display area DA (e.g., refer to fig. 5) and the opening area OA. The first dam D1 may be disposed around the opening area OA. The second dam D2 may be between the first dam D1 and the opening area OA. The second dam D2 may be disposed around the opening area OA.

In an embodiment, the buffer layer 105 and the inorganic insulating layer IIL may be disposed on the substrate 100. The inorganic insulating layer IIL may include a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, and a fourth insulating layer 207. A hole H (IIL) penetrating the third insulating layer 205 and the fourth insulating layer 207 may be defined in the third insulating layer 205 and the fourth insulating layer 207 in the middle region MA. However, the present disclosure is not limited thereto. In another embodiment, the inorganic insulating layer IIL may include a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, a fourth insulating layer 207, and a fifth insulating layer. A fifth insulating layer may be on the fourth insulating layer 207. Holes penetrating the fourth insulating layer 207 and the fifth insulating layer may be defined in the fourth insulating layer 207 and the fifth insulating layer of the middle region MA.

The hole H (IIL) of the inorganic insulating layer IIL may be filled with the first organic insulating layer 209. The groove GR may be formed in a top surface of the first organic insulating layer 209. In other words, the groove GR may be formed in the top surface of the first organic insulating layer 209 in the hole H (IIL) of the inorganic insulating layer IIL. In an embodiment, four holes H (IIL) may be defined in the inorganic insulating layer IIL between the first dam D1 and the display area DA, and four grooves GR may be formed in the top surface of the first organic insulating layer 209. One hole H (IIL) may be defined in the inorganic insulating layer IIL between the first and second dams D1 and D2, and one groove GR may be formed in the top surface of the first organic insulating layer 209. Further, two holes H (IIL) may be defined in the inorganic insulating layer IIL between the second dam D2 and the opening area OA, and two grooves GR may be formed in the top surface of the first organic insulating layer 209. However, the present disclosure is not limited thereto. Five or more holes H (IIL) may be defined in the inorganic insulating layer IIL between the first dam D1 and the display area DA, and five or more grooves GR may be formed in the top surface of the first organic insulating layer 209. Two or more holes H (IIL) may be defined in the inorganic insulating layer IIL between the first and second dams D1 and D2, and two or more grooves GR may be formed in the top surface of the first organic insulating layer 209. Three or more holes H (IIL) may be defined in the inorganic insulating layer IIL between the second dam D2 and the opening area OA, and three or more grooves GR may be formed in the top surface of the first organic insulating layer 209. Although not shown, in another embodiment, when the display panel 10 (for example, refer to fig. 2) includes a third dam between the second dam D2 and the opening area OA, one hole H (IIL) may be defined in the inorganic insulating layer IIL between the second dam D2 and the third dam, one groove GR may be formed in the top surface of the first organic insulating layer 209, one hole H (IIL) may be defined in the inorganic insulating layer IIL between the third dam and the opening area OA, and one groove GR may be formed in the top surface of the first organic insulating layer 209. However, the present disclosure is not limited thereto.

In an embodiment, the metal layer 230 may be on the first organic insulating layer 209. The metal layer 230 may include the same material as the contact metal layer CM in the cross-sectional view of the display area DA shown in fig. 6, and the metal layer 230 and the contact metal layer CM may be simultaneously patterned and formed in the same process. The metal layer 230 may include a conductive material including Mo, al, cu, ti and the like, and may include a multi-layer or single-layer including the above materials. As an embodiment, the metal layer 230 may be formed as a multi-layer including Ti/Al/Ti. The metal layer 230 may include an end portion. The end portions of the metal layer 230 may be disposed apart from each other above the groove GR of the first organic insulating layer 209. Since the metal layer 230 includes an end portion and is disposed over the groove GR of the first organic insulating layer 209, the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 extending from the display area DA toward the middle area MA may be shorted. Since the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 are shorted by the end portions of the metal layer 230 in the middle area MA, external moisture or air is prevented from penetrating into the display area DA through the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223, and by doing so, reliability of the display area DA can be ensured. Further, when the contact metal layer CM and the first organic insulating layer 209 are formed in the display area DA, since the end portion of the metal layer 230 on which the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) are to be formed and the groove GR of the first organic insulating layer 209 are simultaneously patterned, a structure in which the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 can be formed without using an additional mask can be provided.

In an embodiment, the protective layer 240 may be on the metal layer 230. The top and side surfaces of the end portion of the metal layer 230 may be covered by a protective layer 240. In other words, the top and side surfaces of the metal layer 230 may be covered by the protective layer 240. The protective layer 240 may include the same material as that of the pixel electrode 221 (e.g., see fig. 6) of the organic light emitting diode OLED (e.g., see fig. 6) disposed in the display area DA of the display panel 10. The protective layer 240 may be patterned simultaneously with and formed in the same process as the pixel electrode 221 of the organic light emitting diode OLED disposed in the display area DA of the display panel 10. The protective layer 240 may include a conductive oxide material such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂O₃), indium Gallium Oxide (IGO), or Aluminum Zinc Oxide (AZO). As another embodiment, the protective layer 240 may include a reflective film including Ag, mg, al, pt, pd, au, ni, nd, ir, cr or a compound thereof. As another embodiment, the protective layer 240 may further include a film formed of ITO, IZO, znO or In ₂O₃ above/below the above-described reflective film. In the process of manufacturing the display panel 10, when Al of the side surface of the metal layer 230 is exposed to an etchant or a developer and undergoes etching, an undercut structure may be formed between Ti and Al of the metal layer 230, and thus, defects may occur in subsequent layers. Since the side surface of the metal layer 230 is covered by the protective layer 240, al of the metal layer 230 may be prevented from being exposed to an etchant or a developer in a process of manufacturing the display panel 10, and by doing so, defects may be prevented from occurring in subsequent layers due to etching of Al of the metal layer 230. In addition, al of the metal layer 230 may cause a defect factor by a reduction reaction with Ag included in the protective layer 240. Since the side surface of the metal layer 230 is covered by the protective layer 240, exposure of Al of the metal layer 230 can be prevented, and thus, occurrence of defects on the display panel 10 can be fundamentally prevented.

Since the protective layer 240 may also be shorted by an end portion included in the metal layer 230, the protective layer 240 may also be disposed over the groove GR of the first organic insulating layer 209. The functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 extending from the display area DA toward the middle area MA may be disposed over the protective layer 240. Since the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 may be shorted at end portions of the metal layer 230, the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 may be disposed over the groove GR of the first organic insulating layer 209. In other words, the protective layer 240, the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c), and the opposite electrode 223 may be disposed over the groove GR of the first organic insulating layer 209. The protective layer 240, the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c), and the opposite electrode 223 may be sequentially disposed over the groove GR of the first organic insulating layer 209.

In an embodiment, the first organic insulating layer 209 and the second organic insulating layer 211 may be shorted at a point where the middle area MA of the display area DA starts. In other words, the first organic insulating layer 209 and the second organic insulating layer 211 may be shorted in a portion of the middle area MA adjacent to the display area DA. In a portion of the middle area MA adjacent to the display area DA, end portions of the first and second organic insulating layers 209 and 211 may be above the inorganic insulating layer IIL of the middle area MA. In other words, in a portion of the middle area MA adjacent to the display area DA, end portions of the first and second organic insulating layers 209 and 211 may be above the fourth insulating layer 207. In the process of manufacturing the display panel 10, the metal layer 230 may be formed after the first organic insulating layer 209 is formed, and then the second organic insulating layer 211 and the protective layer 240 may be sequentially formed. Since the second organic insulating layer 211 is formed after the metal layer 230 is formed, in a portion of the middle region MA adjacent to the display region DA, a side surface of an end portion of the second organic insulating layer 211 and a side surface of an end portion of the metal layer 230 may contact each other. In the subsequent process, since the top and side surfaces of the metal layer 230 are covered by the protective layer 240, the top and side surfaces of the end portion of the metal layer 230 in contact with the end portion of the second organic insulating layer 211 may be covered by the protective layer 240. In detail, side surfaces and top surfaces of end portions of the metal layer 230 at points where the middle area MA adjacent to the display area DA starts may be covered by the second organic insulating layer 211 and the protective layer 240. Further, the first dam D1 may include a third organic insulating layer 213. The third organic insulating layer 213 of the first dam D1 may be formed after the metal layer 230 and the protective layer 240 are formed. Accordingly, an end portion of the third organic insulating layer 213 of the first dam D1 may be over the protective layer 240. The third organic insulating layer 213 of the first dam D1 may cover the metal layer 230 and an end portion of the protective layer 240 contacting the third organic insulating layer 213. More specifically, the end portions of the metal layer 230 and the protective layer 240 in the middle region MA contacting the first dam D1 may be covered by the third organic insulating layer 213 included in the first dam D1. However, the present disclosure is not limited thereto.

In an embodiment, the length from the point of the middle area MA from the metal layer 230 in the middle area MA to the first dam D1 in the first direction (e.g., +x direction) may be about 59.5 μm. The length of the first dam D1 in the first direction (e.g., the +x direction or the-x direction) may be about 30 μm. The length between the first dam D1 and the second dam D2 in the first direction (e.g., the +x direction or the-x direction) may be about 15.5 μm. The length of the second dam D2 in the first direction (e.g., the +x direction or the-x direction) may be about 30 μm. The length in the first direction (e.g., the +x direction) from the second dam D2 to the opening area OA may be about 51 μm. In another embodiment, the display panel 10 may include a third dam between the second dam D2 and the opening area OA. In this case, the length between the second dam D2 and the third dam in the first direction (e.g., the +x direction or the-x direction) may be about 15.5 μm. The length of the third dam in the first direction (e.g., +x direction or-x direction) may be about 20 μm. The length between the third dam and the opening area OA in the first direction (e.g., the +x direction or the-x direction) may be about 15.5 μm. However, the present disclosure is not limited thereto.

In an embodiment, the groove GR formed in the top surface of the first organic insulating layer 209 filling the hole H (IIL) defined in the inorganic insulating layer IIL of the middle region MA may be covered by the organic encapsulation layer 320. When the flow of the monomer of the organic encapsulation layer 320 is interrupted by the first dam D1, the groove GR of the first organic insulation layer 209 between the first dam D1 and the display area DA may be covered by the organic encapsulation layer 320. In other embodiments, when the flow of the monomer of the organic encapsulation layer 320 is interrupted by the second dam D2, the groove GR of the first organic insulation layer 209 between the first dam D1 and the display area DA and the groove GR of the first organic insulation layer 209 between the first dam D1 and the second dam D2 may also be covered by the organic encapsulation layer 320.

The first inorganic encapsulation layer 310 of the encapsulation layer 300 may continuously cover the inner surface of the groove GR of the first organic insulation layer 209, and the organic encapsulation layer 320 may cover a portion of the middle area MA. The first inorganic encapsulation layer 310 may continuously cover the middle area MA. However, as described above, the organic encapsulation layer 320 may cover the groove GR of the first organic insulation layer 209 between the first dam D1 and the display area DA and the groove GR of the first organic insulation layer 209 between the first dam D1 and the second dam D2. The second inorganic encapsulation layer 330 may entirely cover the middle region MA.

When the organic encapsulation layer 320 is formed, the flow of the monomer may be controlled by the first dam D1 or the second dam D2. In the middle region MA, the organic encapsulation layer 320 may be discontinuous due to the first dam D1 or the second dam D2. An end portion of the organic encapsulation layer 320 may be at one side of the first dam D1 or the second dam D2. The organic encapsulation layer 320 may not extend toward the opening area OA by the first dam D1 or the second dam D2. Portions of the second inorganic encapsulation layer 330 may directly contact portions of the first inorganic encapsulation layer 310 on the first dam D1 or the second dam D2. However, the present disclosure is not limited thereto.

Referring to the opening area OA shown in fig. 7A, the display panel 10 may include the opening area OA. The opening area OA of the display panel 10 may include an opening of a component included in the display panel 10. For example, the opening of the display panel 10 may include the opening 100OP (i.e., the first through hole 100H) of the substrate 100, the opening 310OP of the first inorganic encapsulation layer 310 in the encapsulation layer 300, and the opening 330OP of the second inorganic encapsulation layer 330.

The cross-sectional view of the display device 1 shown in fig. 7A can be understood as a cross-sectional view of the structure surrounding the opening area OA. For example, the groove GR shown in fig. 7A may have a ring shape surrounding the opening area OA, as shown in fig. 5, as viewed in a direction perpendicular to the top surface of the substrate 100. In other words, the groove GR may have a closed loop shape surrounding the opening area OA, as viewed in a direction perpendicular to the top surface of the substrate 100. The first and second dams D1 and D2 may also have a ring shape surrounding the opening area OA as viewed in a direction perpendicular to the top surface of the substrate 100. In other words, the first dam D1 and the second dam D2 may have a closed loop shape surrounding the opening area OA, as viewed in a direction perpendicular to the top surface of the substrate 100.

Fig. 8A is a cross-sectional view schematically showing an enlarged image of the region C shown in fig. 7A. Fig. 8B is a cross-sectional view of an enlarged image of the region shown in fig. 8A. More specifically, fig. 8B is a cross-sectional view showing an enlarged image of an end portion of the metal layer 230 shown in fig. 8A.

Referring to fig. 8A, the protective layer 240 may not be disposed on at least a portion of the first organic insulating layer 209 adjacent to an end portion of the metal layer 230. Since the protective layer 240 is not disposed on at least a portion of the first organic insulating layer 209 adjacent to the end portion of the metal layer 230, gas (or exhaust gas) generated in the first organic insulating layer 209 in the process of manufacturing the display device 1 may be discharged to the outside, and thus, the first organic insulating layer 209 may not be defective.

The process of forming the end portion of the metal layer 230 and the groove GR of the first organic insulating layer 209 may include a first process and a second process. The first process may include a process of forming an end portion of the metal layer 230 by etching at least a portion of the metal layer 230 disposed in contact with the top surface of the first organic insulating layer 209. The second process may include a process of forming the groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. The second process may be performed after the first process in time. However, the embodiment is not limited thereto. In the first process of forming the end portion of the metal layer 230 by etching at least a portion of the metal layer 230, at least a portion of the first organic insulating layer 209 may be simultaneously etched, and thus the groove GR of the first organic insulating layer 209 may be formed.

The minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 may be greater than the length t1 of the end portion of the metal layer 230 protruding in a direction toward the groove GR of the first organic insulating layer 209. The depth t2 of the groove GR (i.e., the minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209) may include the depth t2 of the first organic insulating layer 209 etched in a third direction (e.g., -z direction) in a process (or first process) of forming an end portion of the metal layer 230 by etching at least a portion of the metal layer 230 arranged to be in contact with the top surface of the first organic insulating layer 209 and a process (or second process) of forming the groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. The length t1 of the end portion of the metal layer 230 protruding toward the groove GR of the first organic insulating layer 209 may include etching the length t1 of the first organic insulating layer 209 in a first direction (e.g., a +x direction or a-x direction) in a process of etching at least a portion of the first organic insulating layer 209 to form the groove GR of the first organic insulating layer 209. The minimum distance t2 (e.g., the depth t2 of the groove GR) from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 may include etching a length t2 of the first organic insulating layer 209 in a third direction (e.g., -z direction) while performing two processes (i.e., the first process and the second process), and the length t1 of the end portion of the metal layer 230 protruding in a direction toward the groove GR of the first organic insulating layer 209 may include etching a length t1 of the first organic insulating layer 209 in a first direction (e.g., +x direction or-x direction) while performing one process (i.e., the second process), and accordingly, the minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 may be greater than the length t1 of the end portion of the metal layer 230 protruding from the first organic insulating layer 209 in a direction toward the groove GR of the first organic insulating layer 209.

The end portion of the metal layer 230 may protrude a length t1 of 2.0 μm or less in a direction toward the groove GR of the first organic insulating layer 209. When the length t1 of the end portion of the metal layer 230 protruding in the direction toward the groove GR of the first organic insulating layer 209 is greater than 2.0 μm, the length t1 of the end portion of the metal layer 230 in the first direction (e.g., the +x direction or the-x direction) increases, and thus, in the process of manufacturing the display device 1, the end portion of the metal layer 230 receives stress and at least a portion of the end portion of the metal layer 230 may be damaged.

The thickness t3 of the metal layer 230 may beOr larger. When the thickness t3 of the metal layer 230 is less than/>In the meantime, after the first process of etching the metal layer 230, in the second process of etching the first organic insulating layer 209 to form the groove GR of the first organic insulating layer 209, the metal layer 230 may be broken due to overstress.

Referring to fig. 8B, the metal layer 230 may include a first layer 230a, a second layer 230B, and a third layer 230c. The third layer 230c may be stacked on the first layer 230a, and the second layer 230b may be disposed between the first layer 230a and the third layer 230c. The first layer 230a may include titanium (Ti), the second layer 230b may include aluminum (Al), and the third layer 230c may include titanium (Ti). In the process (or the first process and the second process) of etching at least a portion of the metal layer 230 and at least a portion of the first organic insulating layer 209, since the first layer 230a and the second layer 230b include different materials, the first layer 230a and the second layer 230b may be etched to different extents, and the first layer 230a may protrude further in a direction toward the groove GR of the first organic insulating layer 209 than the second layer 230 b. In other words, a step difference may be generated between the first layer 230a and the second layer 230b included in the metal layer 230.

The protective layer 240 may cover the top and side surfaces of the metal layer 230. The step difference between the first layer 230a and the second layer 230b included in the metal layer 230 may also be covered by the protective layer 240. Since the side surface of the step difference between the first layer 230a and the second layer 230b generated in the process of etching the metal layer 230 and the first organic insulating layer 209 may be covered by the protective layer 240, it is possible to prevent defects from occurring in subsequent processes due to exposure of the second layer 230b in the metal layer 230 to an etchant or a developer and further etching of the second layer 230b in the metal layer 230.

Fig. 9 to 15 are sectional views schematically showing a method of manufacturing the display device 1. Hereinafter, a method of manufacturing the display device 1 will be described with reference to fig. 9 to 15.

The method of manufacturing the display device 1 according to the embodiment may include: forming an inorganic insulating layer IIL on the substrate 100, the substrate 100 including an opening area OA (for example, refer to fig. 5), a display area DA (for example, refer to fig. 5) surrounding at least a portion of the opening area OA, and an intermediate area MA between the opening area OA and the display area DA; forming a hole H (IIL) by removing a portion of the inorganic insulating layer IIL of the intermediate region MA; forming a first organic insulating layer 209 in the hole H (IIL) of the inorganic insulating layer IIL; forming a metal layer 230 on the first organic insulating layer 209; forming an end portion of the metal layer 230 by etching at least a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL; and forming a protective layer 240 covering the top surface and the side surfaces of the end portion of the metal layer 230 on the metal layer 230.

Referring to fig. 9, a buffer layer 105, a first insulating layer 201, a second insulating layer 203, a third insulating layer 205, and a fourth insulating layer 207 may be sequentially formed on the substrate 100. The buffer layer 105, the first insulating layer 201, the second insulating layer 203, the third insulating layer 205, and the fourth insulating layer 207 may each include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, and the like. However, the present disclosure is not limited thereto. Although not shown, in another embodiment, a fifth insulating layer may be on the fourth insulating layer 207.

In an embodiment, at least a portion of each of the third insulating layer 205 and the fourth insulating layer 207 may be removed, and a hole H (IIL) penetrating the third insulating layer 205 and the fourth insulating layer 207 may be defined. However, the present disclosure is not limited thereto. When the fifth insulating layer is on the fourth insulating layer 207, at least a portion of each of the fourth insulating layer 207 and the fifth insulating layer may be removed, and thus, a hole H (IIL) penetrating the fourth insulating layer 207 and the fifth insulating layer may be defined.

Referring to fig. 10, the first organic insulating layer 209 may fill a hole H (IIL) defined in the inorganic insulating layer IIL. In order to fill the hole H (IIL) defined in the inorganic insulating layer IIL with the first organic insulating layer 209, first, a material for forming the first organic insulating layer 209 may be provided on the substrate 100. Light may be irradiated to a portion of the material for forming the first organic insulating layer 209 that fills the hole H (IIL) of the inorganic insulating layer IIL, and light may not be irradiated to another portion of the material for forming the first organic insulating layer 209. A portion of the material for forming the first organic insulating layer 209, which is irradiated with light, may be cured, and a portion not irradiated with light may be removed. The first organic insulating layer 209 filling the hole H (IIL) of the inorganic insulating layer IIL can be formed by irradiating light only to the portion filling the hole H (IIL) of the inorganic insulating layer IIL of the material for forming the first organic insulating layer 209. However, the present disclosure is not limited thereto.

Fig. 11 to 14B illustrate a process of forming an end portion on the metal layer 230 disposed on the first organic insulating layer 209 and a process of forming the groove GR when simultaneously etching a portion of the first organic insulating layer 209 under the metal layer 230. However, the embodiment is not limited thereto. After the first process of forming the end portion of the metal layer 230 by etching at least a portion of the metal layer 230, a second process of forming the groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209 may be performed.

Referring to fig. 11 to 13 and 14A and 14B, a metal layer 230 may be on the first organic insulating layer 209. More specifically, the metal layer 230 may be on the first organic insulating layer 209 and the fourth insulating layer 207. As described above, the metal layer 230 may be formed as a multi-layer including Ti/Al/Ti.

In an embodiment, when etching portions of the metal layer 230, end portions may be formed on the metal layer 230. In detail, when a portion of the metal layer 230 on the first organic insulating layer 209 filling the hole H (IIL) of the inorganic insulating layer IIL is etched, an end portion may be formed on the metal layer 230.

In order to etch a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL and form an end portion on the metal layer 230, a photoresist PR may be on the metal layer 230. The photoresist PR disposed on at least a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL may be removed. In other words, the photoresist PR disposed over the portion to be removed from the metal layer 230 may be removed. Since the portion of the metal layer 230 from which the photoresist PR has been removed may be removed by etching, an end portion may be formed on the metal layer 230. In other words, at least a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL may be etched, and then an end portion of the metal layer 230 may be formed. In detail, at least a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL may be removed by dry etching. The end portions of the metal layer 230 may be disposed over the holes H (IIL) of the inorganic insulating layer IIL separately from each other. Since the end portions are formed on the metal layer 230, the functional layers (i.e., the first functional layer 222a and the second functional layer 222c (e.g., refer to fig. 7A)) and the opposite electrode 223 (e.g., refer to fig. 7A) extending from the display area DA to the middle area MA may be shorted by the end portions of the metal layer 230. The protective layer 240 may also be shorted by the metal layer 230. Since the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 are shorted by the end portions of the metal layer 230, it is possible to prevent external moisture or air from penetrating into the display area DA through the functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 of the middle area MA.

When a portion of the metal layer 230 formed over the hole H (IIL) of the inorganic insulating layer IIL is etched and an end portion is formed on the metal layer 230, at least a portion of the first organic insulating layer 209 under the metal layer 230 may be simultaneously removed, and thus, a groove GR may be formed in the first organic insulating layer 209. Since at least a portion of the metal layer 230 is subjected to dry etching and an end portion is formed on the metal layer 230, the first organic insulating layer 209 under the metal layer 230 may be etched at a higher rate than the metal layer 230 is etched. In detail, in the etching process, when a length t1 of the end portion of the metal layer 230 protruding more than the first organic insulating layer 209 in the first direction (e.g., the +x direction or the-x direction) is 0.3 μm, a length t2 (i.e., a depth t 2) of the groove GR of the first organic insulating layer 209 in a direction perpendicular to the substrate 100 (e.g., the +z direction or the-z direction) may be 0.675 μm. In other words, in the etching process, a ratio of a length t1 of the end portion of the metal layer 230 protruding more than the first organic insulating layer 209 in the first direction (e.g., the +x direction or the-x direction) to a length t2 of the groove GR of the first organic insulating layer 209 in a direction perpendicular to the substrate 100 (e.g., the +z direction or the-z direction) may be 1:2.25. However, the present disclosure is not limited thereto.

After the metal layer 230 and the first organic insulating layer 209 have been simultaneously etched and the end portion of the metal layer 230 and the groove GR of the first organic insulating layer 209 have been formed, respectively, the photoresist PR may be removed. In other words, fig. 14A and 14B may omit the photoresist PR. However, the present disclosure is not limited thereto.

In an embodiment, referring to fig. 14A and 14B, the process of forming the end portion of the metal layer 230 and the groove GR of the first organic insulating layer 209 may include a first process and a second process. The first process may include a process of forming an end portion of the metal layer 230 by etching at least a portion of the metal layer 230 disposed in contact with the top surface of the first organic insulating layer 209. The second process may include a process of forming the groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. The second process may be performed after the first process in time. Since different targets (i.e., the metal layer 230 and the first organic insulating layer 209) are removed in the first process and the second process, respectively, different types of etchants may be used in the first process and the second process.

The minimum thickness t2 (i.e., the minimum distance t 2) from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 may be greater than the length t1 of the end portion of the metal layer 230 protruding from the first organic insulating layer 209 in a direction toward the groove GR of the first organic insulating layer 209. The depth t2 (i.e., the minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209) may include a depth t2 at which the first organic insulating layer 209 is etched in a third direction (e.g., -z direction) in a process (or first process) of forming an end portion of the metal layer 230 by etching at least a portion of the metal layer 230 arranged to be in contact with the top surface of the first organic insulating layer 209 and a process (or second process) of forming the groove GR of the first organic insulating layer 209 by etching at least a portion of the first organic insulating layer 209. The length t1 of the end portion of the metal layer 230 protruding in a direction toward the groove GR of the first organic insulating layer 209 may include etching the length t1 of the first organic insulating layer 209 in a first direction (e.g., a +x direction or a-x direction) in a process of etching at least a portion of the first organic insulating layer 209 to form the groove GR of the first organic insulating layer 209. The minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 (or the depth t2 of the groove GR) may include etching the length t2 of the first organic insulating layer 209 in a third direction (e.g., -z direction) while performing two processes (i.e., a first process and a second process), and the length t1 of the end portion of the metal layer 230 protruding in a direction toward the groove GR of the first organic insulating layer 209 may include etching the length t1 of the first organic insulating layer 209 in a first direction (e.g., +x direction or-x direction) while performing one process (i.e., a second process). Accordingly, a minimum distance t2 from the bottom surface of the metal layer 230 to the groove GR of the first organic insulating layer 209 may be greater than a length t1 of the end portion of the metal layer 230 protruding from the first organic insulating layer 209 in a direction toward the groove GR of the first organic insulating layer 209.

Referring to fig. 15, a protective layer 240 may be on the metal layer 230 and the first organic insulating layer 209. The protective layer 240 may be simultaneously patterned and simultaneously formed with the pixel electrode 221 (e.g., referring to fig. 6) of the organic light emitting diode OLED (e.g., referring to fig. 6) disposed in the display area DA, and may include the same material as that included in the pixel electrode 221. As described above, the protective layer 240 may include a conductive oxide material such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In ₂O₃), indium Gallium Oxide (IGO), or Aluminum Zinc Oxide (AZO). As another embodiment, the protective layer 240 may include a reflective film including Ag, mg, al, pt, pd, au, ni, nd, ir, cr or a compound thereof. As another embodiment, the protective layer 240 may further include a film formed of ITO, IZO, znO or In ₂O₃ above/below the above-described reflective film.

The protective layer 240 may cover the top and side surfaces of the metal layer 230. Since the protective layer 240 is shorted by the end portion of the metal layer 230, the protective layer 240 may also be disposed over the groove GR of the first organic insulating layer 209. Since the protective layer 240 covers the top and side surfaces of the metal layer 230, occurrence of defect factors due to a reduction reaction between Al of the metal layer 230 and Ag of the protective layer 240 can be prevented, and occurrence of defects in subsequent layers due to formation of an undercut structure between Al and Ti of the metal layer 230 due to etching of Al of the metal layer 230 by an etchant of another layer in a subsequent process can be prevented.

The hole H (IIL) is formed in the inorganic insulating layer IIL in the middle region MA of the display panel 10 (e.g., refer to fig. 2), the groove GR is formed in the first organic insulating layer 209 filling the hole H (IIL) of the inorganic insulating layer IIL, and the metal layer 230 on the first organic insulating layer 209 may include an end portion. The functional layers (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 extending from the display area DA of the display panel 10 to the middle area MA may be short-circuited by the end portion of the metal layer 230 and the groove GR of the first organic insulating layer 209 disposed in the middle area MA of the display panel 10. By having the functional layer (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223 shorted from the middle area MA, external air or moisture can be prevented from penetrating into the display area DA through the functional layer (i.e., the first functional layer 222a and the second functional layer 222 c) and the opposite electrode 223.

In the process of forming the end portion of the metal layer 230 by etching the metal layer 230 disposed on the first organic insulating layer 209, at least a portion of the first organic insulating layer 209 may be simultaneously etched, and thus the groove GR may be formed. Since the end portion of the metal layer 230 and the groove GR of the first organic insulating layer 209 may be formed without using an additional mask, time taken for a process for manufacturing the display panel 10 may be reduced and efficiency in a manufacturing process may be improved as much as possible.

The protective layer 240 may be formed on the metal layer 230, and the protective layer 240 may cover a top surface and side surfaces of an end portion of the metal layer 230. Since the protective layer 240 covers the side surface of the metal layer 230, occurrence of a defect factor due to a reduction reaction between Al of the metal layer 230 and Ag of the protective layer 240 can be prevented, and occurrence of a defect in a subsequent layer due to formation of an undercut structure between Al and Ti of the metal layer 230 by etching Al of the metal layer 230 by an etchant of another layer in a subsequent process can be prevented.

Regarding the opening region, the display device related to the embodiments of the present disclosure may prevent foreign substances such as moisture from causing damage to the display element. However, this is only an example, and effects according to the embodiments will be described in detail in the accompanying description.

It should be understood that the embodiments described herein should be considered in descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered as applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims.

Claims

1. A display device, comprising:

A substrate including an opening region, a display region surrounding at least a portion of the opening region, and an intermediate region between the opening region and the display region;

An inorganic insulating layer disposed over the substrate and defining a hole therein;

A first organic insulating layer filling the hole and having a groove formed in a top surface thereof;

a metal layer disposed on the first organic insulating layer and including a plurality of end portions; and

A protective layer on the metal layer,

Wherein the plurality of end portions of the metal layer are disposed above the groove separately from each other, and

Top and side surfaces of the plurality of end portions of the metal layer are covered by the protective layer.

2. The display device of claim 1, wherein the protective layer is also disposed over the recess of the first organic insulating layer.

3. The display device of claim 1, further comprising a first dam disposed in the intermediate region.

4. A display device according to claim 3, wherein the aperture is defined in the inorganic insulating layer arranged between the display area and the first dam, and

The portion of the first organic insulating layer filling the hole includes the recess in the top surface of the first organic insulating layer.

5. The display device of claim 3, further comprising a second dam between the first dam and the open area.

6. The display device of claim 5, wherein the aperture is defined in the inorganic insulating layer disposed between the first and second dams, and

7. The display device of claim 5, further comprising a second organic insulating layer on the first organic insulating layer.

8. The display device of claim 7, wherein each of the first and second dams includes the second organic insulating layer and a third organic insulating layer disposed on the second organic insulating layer.

9. The display device according to claim 5, wherein the hole is defined in the inorganic insulating layer arranged between the second dam and the opening region, and

10. The display device according to claim 1, further comprising a light-emitting device including a pixel electrode and an opposite electrode provided in the display region and a functional layer between the pixel electrode and the opposite electrode, and

The protective layer and the pixel electrode include the same material.

11. The display device according to claim 7, wherein the protective layer covers side surfaces and top surfaces of end portions of the metal layer in contact with the second organic insulating layer in a portion of the intermediate region adjacent to the display region.

12. The display device according to claim 8, wherein the third organic insulating layer included in the first dam covers the metal layer and the protective layer in contact with the second organic insulating layer included in the first dam.

13. The display device according to claim 8, wherein the third organic insulating layer included in the second dam covers the metal layer and the protective layer in contact with the second organic insulating layer included in the second dam.