KR20240047335A - 병렬 산란계 오버레이 계측 - Google Patents

병렬 산란계 오버레이 계측 Download PDF

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Publication number
KR20240047335A
KR20240047335A KR1020237042491A KR20237042491A KR20240047335A KR 20240047335 A KR20240047335 A KR 20240047335A KR 1020237042491 A KR1020237042491 A KR 1020237042491A KR 20237042491 A KR20237042491 A KR 20237042491A KR 20240047335 A KR20240047335 A KR 20240047335A
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KR
South Korea
Prior art keywords
illumination
cell
beam distribution
illumination beam
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237042491A
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English (en)
Korean (ko)
Inventor
앤드류 브이 힐
암논 마나쎈
드미트리 고렐릭
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20240047335A publication Critical patent/KR20240047335A/ko
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/26Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020237042491A 2021-08-25 2022-08-19 병렬 산란계 오버레이 계측 Pending KR20240047335A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/411,539 2021-08-25
US17/411,539 US11531275B1 (en) 2021-08-25 2021-08-25 Parallel scatterometry overlay metrology
PCT/US2022/040824 WO2023027947A1 (en) 2021-08-25 2022-08-19 Parallel scatterometry overlay metrology

Publications (1)

Publication Number Publication Date
KR20240047335A true KR20240047335A (ko) 2024-04-12

Family

ID=84492602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237042491A Pending KR20240047335A (ko) 2021-08-25 2022-08-19 병렬 산란계 오버레이 계측

Country Status (7)

Country Link
US (1) US11531275B1 (https=)
EP (1) EP4323751A4 (https=)
JP (1) JP7705482B2 (https=)
KR (1) KR20240047335A (https=)
CN (1) CN117480377B (https=)
TW (1) TW202309599A (https=)
WO (1) WO2023027947A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12111580B2 (en) * 2021-03-11 2024-10-08 Kla Corporation Optical metrology utilizing short-wave infrared wavelengths
US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
JP2024098435A (ja) * 2023-01-10 2024-07-23 キオクシア株式会社 計測装置、及び、計測方法
US20240302751A1 (en) * 2023-03-09 2024-09-12 Kla Corporation Multi-overlay stacked grating metrology target
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7349105B2 (en) 2004-09-01 2008-03-25 Intel Corporation Method and apparatus for measuring alignment of layers in photolithographic processes
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
US9429856B1 (en) 2013-01-21 2016-08-30 Kla-Tencor Corporation Detectable overlay targets with strong definition of center locations
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
US10371626B2 (en) 2016-08-17 2019-08-06 Kla-Tencor Corporation System and method for generating multi-channel tunable illumination from a broadband source
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer
US10444161B2 (en) * 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
KR20200004381A (ko) * 2017-05-08 2020-01-13 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
US10510623B2 (en) * 2017-12-27 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
US11175593B2 (en) * 2018-04-26 2021-11-16 Asml Netherlands B.V. Alignment sensor apparatus for process sensitivity compensation
US11281111B2 (en) * 2018-08-28 2022-03-22 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
JP7124205B2 (ja) * 2018-08-29 2022-08-23 エーエスエムエル ホールディング エヌ.ブイ. コンパクトなアライメントセンサ配置
US11118903B2 (en) 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
US11073768B2 (en) 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US10969697B1 (en) * 2019-10-18 2021-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay metrology tool and methods of performing overlay measurements
CN115004113B (zh) 2020-01-29 2026-03-24 Asml荷兰有限公司 量测方法和用于测量衬底上的周期性结构的装置
US11662562B2 (en) 2020-02-09 2023-05-30 Kla Corporation Broadband illumination tuning
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement

Also Published As

Publication number Publication date
CN117480377B (zh) 2025-01-14
JP7705482B2 (ja) 2025-07-09
US11531275B1 (en) 2022-12-20
JP2024538857A (ja) 2024-10-24
WO2023027947A1 (en) 2023-03-02
EP4323751A4 (en) 2025-07-23
EP4323751A1 (en) 2024-02-21
CN117480377A (zh) 2024-01-30
TW202309599A (zh) 2023-03-01

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