CN117480377B - 平行散射测量的叠加计量 - Google Patents

平行散射测量的叠加计量 Download PDF

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Publication number
CN117480377B
CN117480377B CN202280038375.XA CN202280038375A CN117480377B CN 117480377 B CN117480377 B CN 117480377B CN 202280038375 A CN202280038375 A CN 202280038375A CN 117480377 B CN117480377 B CN 117480377B
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CN
China
Prior art keywords
illumination
illumination beam
metrology tool
overlay
channel
Prior art date
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Active
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CN202280038375.XA
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English (en)
Chinese (zh)
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CN117480377A (zh
Inventor
A·V·希尔
A·玛纳森
D·戈列里克
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KLA Corp
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KLA Tencor Corp
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Publication of CN117480377A publication Critical patent/CN117480377A/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202280038375.XA 2021-08-25 2022-08-19 平行散射测量的叠加计量 Active CN117480377B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/411,539 2021-08-25
US17/411,539 US11531275B1 (en) 2021-08-25 2021-08-25 Parallel scatterometry overlay metrology
PCT/US2022/040824 WO2023027947A1 (en) 2021-08-25 2022-08-19 Parallel scatterometry overlay metrology

Publications (2)

Publication Number Publication Date
CN117480377A CN117480377A (zh) 2024-01-30
CN117480377B true CN117480377B (zh) 2025-01-14

Family

ID=84492602

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280038375.XA Active CN117480377B (zh) 2021-08-25 2022-08-19 平行散射测量的叠加计量

Country Status (7)

Country Link
US (1) US11531275B1 (https=)
EP (1) EP4323751A4 (https=)
JP (1) JP7705482B2 (https=)
KR (1) KR20240047335A (https=)
CN (1) CN117480377B (https=)
TW (1) TW202309599A (https=)
WO (1) WO2023027947A1 (https=)

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US12111580B2 (en) * 2021-03-11 2024-10-08 Kla Corporation Optical metrology utilizing short-wave infrared wavelengths
US11841621B2 (en) * 2021-10-29 2023-12-12 KLA Corporation CA Moiré scatterometry overlay
JP2024098435A (ja) * 2023-01-10 2024-07-23 キオクシア株式会社 計測装置、及び、計測方法
US20240302751A1 (en) * 2023-03-09 2024-09-12 Kla Corporation Multi-overlay stacked grating metrology target
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (1)

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US10969697B1 (en) * 2019-10-18 2021-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay metrology tool and methods of performing overlay measurements

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US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7349105B2 (en) 2004-09-01 2008-03-25 Intel Corporation Method and apparatus for measuring alignment of layers in photolithographic processes
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
US9429856B1 (en) 2013-01-21 2016-08-30 Kla-Tencor Corporation Detectable overlay targets with strong definition of center locations
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
US10371626B2 (en) 2016-08-17 2019-08-06 Kla-Tencor Corporation System and method for generating multi-channel tunable illumination from a broadband source
US10551749B2 (en) 2017-01-04 2020-02-04 Kla-Tencor Corporation Metrology targets with supplementary structures in an intermediate layer
US10444161B2 (en) * 2017-04-05 2019-10-15 Kla-Tencor Corporation Systems and methods for metrology with layer-specific illumination spectra
KR20200004381A (ko) * 2017-05-08 2020-01-13 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
US10510623B2 (en) * 2017-12-27 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
US11175593B2 (en) * 2018-04-26 2021-11-16 Asml Netherlands B.V. Alignment sensor apparatus for process sensitivity compensation
US11281111B2 (en) * 2018-08-28 2022-03-22 Kla-Tencor Corporation Off-axis illumination overlay measurement using two-diffracted orders imaging
JP7124205B2 (ja) * 2018-08-29 2022-08-23 エーエスエムエル ホールディング エヌ．ブイ． コンパクトなアライメントセンサ配置
US11118903B2 (en) 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
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CN115004113B (zh) 2020-01-29 2026-03-24 Asml荷兰有限公司 量测方法和用于测量衬底上的周期性结构的装置
US11662562B2 (en) 2020-02-09 2023-05-30 Kla Corporation Broadband illumination tuning
US11300405B2 (en) * 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement

Patent Citations (1)

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US10969697B1 (en) * 2019-10-18 2021-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay metrology tool and methods of performing overlay measurements

Also Published As

Publication number Publication date
JP7705482B2 (ja) 2025-07-09
KR20240047335A (ko) 2024-04-12
US11531275B1 (en) 2022-12-20
JP2024538857A (ja) 2024-10-24
WO2023027947A1 (en) 2023-03-02
EP4323751A4 (en) 2025-07-23
EP4323751A1 (en) 2024-02-21
CN117480377A (zh) 2024-01-30
TW202309599A (zh) 2023-03-01

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