KR20240041236A - Semiconductor manufacturing apparatus, peeling unit and method of manufacturing semiconductor device - Google Patents

Abstract

The purpose of the present invention is to provide a technology capable of reducing damage to dies. A semiconductor manufacturing apparatus is formed of an adhesive sheet that is peeled by a laser beam, and includes a wafer holding support for holding a dicing tape with a die attached thereto, and a peeling unit provided below the dicing tape. The peeling unit includes a laser irradiation device that condenses the emitted light at a point spaced apart by a predetermined distance, and a mask device having a mask that limits the irradiation area formed by the irradiation light from the laser irradiation device. The size of the irradiation area can be changed by the laser irradiation device.

Description

Semiconductor manufacturing apparatus, peeling unit, and manufacturing method of a semiconductor device {SEMICONDUCTOR MANUFACTURING APPARATUS, PEELING UNIT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE}

The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a die bonder using a dicing tape whose adhesive strength is weakened by irradiation of laser light.

Semiconductor manufacturing equipment, such as a die bonder, is a device that uses a bonding material to bond (place and adhere) elements onto a substrate or element, for example. The bonding material is, for example, liquid or film-like resin or solder. The devices are, for example, dyna electronic components such as semiconductor chips, MEMS (Micro Electro Mechanical System), and glass chips. The substrate is, for example, a wiring board, a lead frame formed of a thin metal plate, a glass substrate, etc.

For example, during the die bonding process using a die bonder, there is a peeling process in which die divided from a semiconductor wafer (hereinafter simply referred to as a wafer) is peeled from a dicing tape. The dicing tape has an adhesive layer and a wafer is attached thereto. In the peeling process, the dies are pushed up from the back side of the dicing tape using a push block or the like, peeled off one by one from the dicing tape held in the die supply section, and transferred onto the substrate using a suction nozzle such as a collet.

Japanese Patent Publication No. 2012-4393

In the peeling process, when the die is peeled from the dicing tape and picked up, damage such as cracks or notches may occur in the die.

The object of the present disclosure is to provide a technology capable of reducing damage to dies. Other problems and new features will become apparent from the description of this specification and the accompanying drawings.

A brief outline of representative examples of the present disclosure is as follows.

That is, the semiconductor manufacturing apparatus is formed of an adhesive sheet that is peeled by a laser beam, and includes a wafer holding support that holds a dicing tape to which a die is attached, and a peeling unit provided below the dicing tape. The peeling unit includes a laser irradiation device that condenses the emitted light at a point spaced apart by a predetermined distance, and a mask device having a mask that limits the irradiation area formed by the irradiation light from the laser irradiation device. The size of the irradiation area can be changed by the laser irradiation device.

According to the present disclosure, it is possible to reduce damage to the die.

1 is a schematic top view showing a configuration example of a die bonder in the first embodiment.
FIG. 2 is a diagram illustrating a schematic configuration when viewed in the direction of arrow A in FIG. 1.
FIG. 3 is a schematic cross-sectional view showing main parts of the wafer supply unit shown in FIG. 1.
FIG. 4 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder shown in FIG. 1.
FIG. 5 is a top view of the peeling unit shown in FIG. 2.
FIG. 6 is a cross-sectional view taken along line AA of the peeling unit shown in FIG. 5.
Figure 7(a) is a schematic diagram showing a peeling unit, dicing tape, die, and collet in a comparative example. Figure 7(b) is a diagram showing the peeling unit, dicing tape, die, and collet in the first embodiment.
Fig. 8 is a schematic diagram showing a peeling unit, a dicing tape, a die, and a collet in a first modification of the first embodiment.
FIG. 9(a) is a diagram showing the intensity transition of the laser light source in the first embodiment. FIG. 9(b) is a diagram showing the intensity transition of the laser light source in the second modification of the first embodiment.
FIG. 10(a) and FIG. 10(b) are diagrams showing the configuration and operation of the laser irradiation device in the third modification of the first embodiment.
11(a) to 11(c) are cross-sectional views of the irradiation range limiting component in the fourth modification of the first embodiment.
Figure 12(a) is a front view of the peeling unit in the second embodiment. FIG. 12(b) is a front view of the mask device of the peeling unit shown in FIG. 12(a) when raised to the position of the dicing tape.
Fig. 13 is a perspective view showing a part of the peeling unit shown in Fig. 12(a).
FIG. 14 is a conceptual diagram showing the relationship between the position of the laser irradiation device shown in FIG. 12(a) and the irradiation area.
Fig. 15 is a diagram showing the relationship between the diameter of a circular spot and a square die inscribed in the circular spot.
FIG. 16(a) is a top view showing the position of the opening/closing hook when the laser irradiation device shown in FIG. 14 is located at a distance H1 from the dicing tape. FIG. 16(b) is a top view showing the position of the opening/closing claw when the laser irradiation device shown in FIG. 14 is located at a distance H2 from the dicing tape. FIG. 16(c) is a top view showing the position of the opening/closing claw when the laser irradiation device shown in FIG. 14 is located at a distance H3 from the dicing tape.
Fig. 17 is a top view showing the position of the opening/closing hook when the X1-X2 direction forms an opening smaller than the Y1-Y2 direction.
Fig. 18 is a top view showing the position of the opening/closing hook when the X1-X2 direction forms an opening larger than the Y1-Y2 direction.
Fig. 19 is a top view showing a part of the mask device in the first modification of the second embodiment.
Fig. 20 is a top view showing a mask device in a second modification of the second embodiment.

Hereinafter, embodiments and modifications will be described using drawings. However, in the following description, the same components may be given the same symbols and repeated descriptions may be omitted. In addition, in order to make the explanation clearer, the drawings may schematically express the width, thickness, shape, etc. of each part compared to the actual mode. In addition, even among a plurality of drawings, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match each other.

<First embodiment>

The configuration of a die bonder, which is one embodiment of a semiconductor manufacturing apparatus, will be described using FIGS. 1 to 3. 1 is a schematic top view showing a configuration example of a die bonder in an embodiment. FIG. 2 is a diagram illustrating a schematic configuration when viewed in the direction of arrow A in FIG. 1. FIG. 3 is a schematic cross-sectional view showing main parts of the wafer supply unit shown in FIG. 1.

The die bonder 1 is roughly divided into a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transfer unit 50, and a substrate supply unit 60. It has a substrate carrying unit 70 and a control unit (control device) 80. The Y direction (Y2-Y1 direction) is the front and rear direction of the die bonder 1, the X direction (X2-X1 direction) is the left and right direction, and the Z direction (Z1-Z2 direction) is the up and down direction. The wafer supply unit 10 is disposed on the front side of the die bonder 1, and the bonding portion 40 is disposed on the rear side.

The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding support 12, a peeling unit 13, and a wafer recognition camera 14.

The wafer cassette lifter 11 moves a wafer cassette (not shown) storing a plurality of wafer rings WR up and down to the wafer transfer height. A wafer correction chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. The wafer extractor (not shown) extracts the wafer ring WR from the wafer cassette and supplies it to the wafer holding support 12, or removes the wafer ring WR from the wafer holding support 12 and stores it in the wafer cassette.

The wafer holding support 12 includes an expand ring 121 that holds and supports the wafer ring WR, and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. ) has. The peeling unit 13 is disposed inside the support ring 122. In addition, in order to improve the pick-up performance of the die D, when the die D is peeled, the expand ring 121 holding the wafer ring WR can be lowered and The held dicing tape DT can be stretched to widen the gap between the dies D.

A wafer W is adhered (attached) on a dicing tape DT, and the wafer W is divided into a plurality of dies D. A film-like adhesive material (DF) called die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material (DF) is cured by heating.

As a dicing tape (DT), for example, a heat-peelable tape is used, which has adhesive force at room temperature and peels off as the adhesive layer expands and the adhesive layer weakens when heated. In addition, the heat-release tape is preferably peeled at a temperature lower than the curing temperature of the adhesive material (DF) (normally 150°C). In addition, curing of the adhesive material (DF) involves applying a specified temperature for a long period of time (about 1 hour), and when the heating time of the heat-release tape is short, the peeling temperature of the heat-release sheet is equal to the curing temperature of the adhesive material (DF). It may be about the same.

The wafer holding stand 12 moves in the XY direction by a drive unit (not shown) to move the die D to be picked up to the position of the peeling unit 13. Additionally, the wafer holding stand 12 rotates the wafer ring WR within the XY plane by a drive unit (not shown). The peeling unit 13 moves in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

The wafer recognition camera 14 determines the pickup position of the die D picked up from the wafer W or inspects the surface of the die D.

The pickup unit 20 has a pickup head 21 and a Y drive unit 23. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 has respective drive units (not shown) that lift, rotate, and move the pickup head 21 in the X1-X2 direction.

The intermediate stage unit 30 has an intermediate stage 31 on which the die D is loaded, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is provided with a suction hole for sucking the loaded die D. The loaded die D is temporarily held on the intermediate stage 31. The middle stage 31 is a loading stage where the die D is loaded, and is also a pickup stage where the die D is picked up.

The bonding unit 40 has a bond head 41, a Y drive unit 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that suction-holds the die D at its tip. The Y driving unit 43 moves the bond head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures an image of the substrate S and recognizes the bond position. Here, a plurality of product areas (hereinafter referred to as package areas P) that ultimately become one package are formed on the substrate S. Additionally, a position recognition mark (not shown) of the package area P is formed on the substrate S. When the die D is placed on the substrate S, the bond stage 46 is raised and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum suction of the substrate S, and is capable of fixing the substrate S. The bond stage 46 has a heating unit (not shown) that heats the substrate S. The bonding unit 40 has driving units (not shown) that lift, rotate, and move the bond head 41 in the X1-X2 direction.

With this configuration, the bond head 41 corrects the pickup position and posture based on the imaging data of the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds on the package area P of the substrate S based on the imaging data of the substrate recognition camera 44, or is already on the package area P of the substrate S. It is bonded in the form of stacking on the bonded die.

The transport unit 50 has a transport hook 51 for gripping and transporting the substrate S, and a transport lane 52 along which the substrate S moves. The substrate S moves in the With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate carrying unit 70, and then moves to the substrate carrying unit 70. Transfer the substrate (S) to.

The substrate supply unit 60 takes out the substrate S stored and loaded in the transfer jig from the transfer jig and supplies it to the transfer unit 50 . The substrate carrying unit 70 stores the substrate S transported by the transport unit 50 in a transport jig.

The control unit 80 includes a memory device that stores programs (software) and data that monitor and control the operation of each part of the die bonder 1, a central processing unit (CPU) that executes the program stored in the memory device, and input/output Equipped with a device (not shown). The input/output device includes an image introduction device (not shown), a motor control device (not shown), and the like. The image introduction device imports image data from the wafer recognition camera 14, the stage recognition camera 34, and the substrate recognition camera 44. The motor control device controls the driving unit of the wafer supply unit 10, the driving unit of the pickup unit 20, the driving unit of the bonding unit 40, etc.

A part of the semiconductor device manufacturing process (semiconductor device manufacturing method) using the die bonder 1 will be explained using FIG. 4. FIG. 4 is a flowchart showing a method of manufacturing a semiconductor device using the die bonder shown in FIG. 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by the control unit 80.

(Wafer loading process: Process S1)

A wafer ring (WR) is supplied to the wafer cassette of the wafer cassette lifter (11). The supplied wafer ring WR is supplied to the wafer holding support 12. In addition, the wafer W is inspected in advance for each die by an inspection device such as a prober, and wafer map data indicating good or bad for each die is generated and stored in the storage device of the control unit 80.

(Substrate loading process: Process S2)

The transfer jig in which the substrate S is stored is supplied to the substrate supply unit 60 . The substrate S is taken out from the conveyance jig in the substrate supply unit 60, and the substrate S is fixed to the conveyance hook 51.

(Pick-up process: Process S3)

After process S1, the wafer holding support 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the positioning and surface inspection of the die D are performed based on the image data acquired by the photographing. By image processing the image data, the amount of deviation (in the Additionally, the die position reference point is held in advance by setting a predetermined position of the wafer holding support 12 as the initial setting of the device. By image processing the image data, surface inspection of the die D is performed.

The positioned die D is peeled from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D peeled from the dicing tape DT is adsorbed and held by the collet 22 provided in the pickup head 21, and is transported and placed on the intermediate stage 31.

The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the positioning and surface inspection of the die D are performed based on the image data acquired by the photographing. By image processing the image data, the amount of deviation (X, Y, θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder is calculated, and positioning is performed. Additionally, the die position reference point is held in advance by setting a predetermined position of the intermediate stage 31 as the initial setting of the device. By image processing the image data, surface inspection of the die D is performed.

The pickup head 21, which conveys the die D to the intermediate stage 31, is returned to the wafer supply unit 10. According to the above-described procedure, the next die D is peeled from the dicing tape DT, and then the dies D are peeled one by one from the dicing tape DT according to the same procedure.

(Bond process: Process S4)

The substrate S is transported to the bond stage 46 by the transport unit 50 . The substrate S mounted on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired through photography. By image processing the image data, the amount of deviation (X, Y, θ directions) of the substrate S from the substrate position reference point of the die bonder 1 is calculated. Additionally, the substrate position reference point is held in advance by setting a predetermined position of the bonding portion 40 as the initial setting of the device.

The adsorption position of the bond head 41 is corrected based on the amount of deviation of the die D on the intermediate stage 31 calculated in step S3, and the die D is adsorbed by the collet 42. The die D is bonded to a predetermined location on the substrate S supported on the bond stage 46 by the bond head 41 that adsorbs the die D from the intermediate stage 31. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and an inspection, such as whether the die D is bonded to the desired position, is performed based on the image data acquired by photographing. .

The bond head 41 that bonds the die D to the substrate S is returned to the intermediate stage 31. According to the above-described procedure, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated so that the die (D) is bonded to all package areas (P) of the substrate (S).

(Substrate unloading process: Process S5)

The substrate S to which the die D is bonded is transported to the substrate carrying unit 70 . The substrate S is taken out from the transport hook 51 in the substrate carrying unit 70 and stored in the transport jig. The transfer jig in which the substrate S is stored is unloaded from the die bonder 1.

As described above, the die D is mounted on the substrate S and unloaded from the die bonder 1. After that, for example, the transfer jig in which the substrate S on which the die D is mounted is transported to the wire bonding process, and the electrode of the die D is electrically connected to the electrode of the substrate S through an Au wire or the like. It is connected to . Then, the substrate S is transported to the mold process, and the die D and the Au wire are sealed with mold resin (not shown), thereby completing the semiconductor package.

In the case of lamination bonding, following the wire bonding process, the transfer jig on which the substrate S on which the die D is mounted is loaded and stored is brought into the die bonder, and the die D mounted on the substrate S is carried out. After (D) is laminated and taken out from the die bonder, it is electrically connected to the electrode of the substrate (S) through an Au wire in a wire bonding process. The die D above the second stage is peeled from the dicing tape DT by the above-described method, then conveyed to the bonding unit and laminated on the die D. After the above process is repeated a predetermined number of times, the substrate S is conveyed to the mold process, and the plurality of dies D and the Au wire are sealed with a mold resin (not shown), thereby completing the stacked package.

Next, the structure of the peeling unit is explained using FIGS. 5 and 6. FIG. 5 is a top view of the peeling unit shown in FIG. 2. FIG. 6 is a cross-sectional view taken along line A-A of the peeling unit shown in FIG. 5. In Figure 5, the X1 direction is indicated as X, and the Y1 direction is indicated as Y.

The peeling unit 13 includes a laser irradiation unit 131 that irradiates laser light to the dicing tape DT, a suction unit 132 that suctions the dicing tape DT, and a cylindrical unit that holds them. It has a dome 133 and a dome plate 134 that covers the dome 133.

The dome plate 134 has an opening where the laser irradiation portion 131 is disposed, and a plurality of suction ports 134a and a plurality of grooves 134b connecting the plurality of suction ports 134a are provided at the periphery thereof. The suction port 134a communicates with the cavity 132a of the suction portion 132 provided below. The cavity 132a is formed in an annular shape around the laser irradiation unit 131. The cavity 132a communicates with the pipe 132b and is connected to a vacuum pump. The inside of each of the suction ports 134a and the grooves 134b is depressurized by the vacuum pump when the peeling unit 13 is raised and its upper surface is brought into contact with the back surface of the dicing tape DT, and the pick-up target die is The back side of the dicing tape DT in other areas is configured to be in close contact with the upper surface of the dome plate 134. The suction port 134a and the suction portion 132 (cavity 132a, pipe 132b) constitute a vacuum path.

In order to prevent heating of the surrounding die due to an increase in temperature of the dome plate 134 due to heat from the laser irradiation unit 131, a gap G is provided between the laser irradiation unit 131 and the dome plate 134. , the air is insulated. The width of the gap G is, for example, about 0.5 mm. Additionally, in order to reduce the temperature rise of the dome plate 134, a cooling section may be provided below the cavity 132a with a wall in between. The cooling unit includes, for example, a cavity provided in an annular shape around the laser irradiation unit 131, and a pipe communicating with the cavity. Then, cooling gas is supplied to the cavity from a pipe, and the supplied cooling gas is discharged out of the cooling unit through an exhaust hole provided in the wall forming the cavity.

The laser irradiation unit 131 includes a cavity 131a, a laser irradiation device 131c, and an irradiation range limiting part 131d having an opening. An opening 131b is provided at the top of the cavity 131a. The laser irradiation device 131c directly heats the dicing tape DT by irradiating laser light through the opening 131b and the opening of the irradiation range limiting part 131d. Here, the laser irradiation device 131c is installed so that its optical axis is inclined in a direction that does not coincide with the normal direction of the surface of the dicing tape DT. The laser irradiation device 131c has an irradiation range that spreads throughout the opening 131b. That is, the irradiation range of the laser irradiation device 131c is fixed and is larger than the size of the die D. For the laser irradiation device 131c, for example, an infrared laser for heating with a wavelength of about 940 nm is used.

The irradiation range limiting part 131d includes, for example, a rectangular plate with an opening. The plate is a mask that blocks the laser light. The opening of the plate matches the shape and size (die size) of the die D and is exchangeable. In other words, the irradiation range of the irradiation range limited component 131d can be adjusted according to the die size. The irradiation range limiting part 131d may enable the irradiation range to be adjusted using, for example, an aperture (a part with a variable opening area) formed by combining two L-shaped plates. By using the irradiation range limiting component 131d, laser light can be irradiated according to the die size, thereby preventing heating of unnecessary parts.

According to the first embodiment, at least one of the following effects is achieved.

(a) Since the push-up block like Patent Document 1 is not used, the push-up block is not pushed higher than the dome plate. This makes it possible to pick up with low stress and reduce cracks and notches in the die.

(b) By selectively irradiating laser light to the portion of the dicing tape (DT) located below the die (D) to be picked up, the die (peripheral die) and the surrounding area located around the die to be picked up (die to be peeled off). It is possible to reduce the conduction of heat to the dicing tape (DT) below the die. As a result, it is possible to suppress the peripheral die from becoming prone to peeling off and reduce the risk of breakage.

The effect of the first embodiment, which is different from the above-described effect, will be explained using Fig. 7(a) and Fig. 7(b). Figure 7(a) is a schematic diagram showing a peeling unit, dicing tape, die, and collet in a comparative example. Figure 7(b) is a schematic diagram showing the peeling unit, dicing tape, die, and collet in the first embodiment.

As shown in (a) of FIG. 7, the laser irradiation device 131c of the peeling unit 13 in the comparative example is provided to irradiate the laser light LL along the normal direction of the dicing tape DT. . For this reason, the laser light RL, which is regularly reflected from the surface of the adhesive layer of the dicing tape DT, is reflected in the same direction as the irradiation direction (normal direction of the dicing tape DT) and thus returns to the laser irradiation device 131c. This causes the light source to heat up excessively.

As shown in FIG. 7(b), the laser irradiation device 131c of the peeling unit 13 in the first embodiment radiates the laser light LL not coincident with the normal direction of the dicing tape DT. Arrangements are made to investigate. For this reason, the laser light RL regularly reflected from the surface of the adhesive layer of the dicing tape DT is reflected in a direction different from the irradiation direction and does not return to the laser irradiation device 131c. Thereby, excessive heating of the laser irradiation device due to recursion of the laser beam can be prevented, and shortening of the lifespan of the laser irradiation device and destabilization of the irradiation intensity can be prevented.

In addition, when heating by the laser light LL, as shown in FIG. 7(b), the collet 22 is kept on standby without contacting the die D. Thereby, it is possible to prevent heating of the collet 22 through the die D. Additionally, conduction of cold heat from the collet 22 to the die D (dicing tape DT) is suppressed, making it possible to efficiently heat the dicing tape DT.

<Modification of the first embodiment>

Hereinafter, several representative modifications of the first embodiment will be given. In the following description of the modified example, the same symbols as those in the above-described first embodiment may be used for parts having the same structure and function as those described in the above-described first embodiment. For the explanation of these parts, the explanation in the above-described first embodiment may be appropriately used within the scope of technical contradiction. In addition, all or part of the above-described first embodiment and a plurality of modified examples may be applied in combination as appropriate within the range of technical contradiction.

(First modification)

Fig. 8 is a schematic diagram showing a peeling unit, a dicing tape, a die, and a collet in a first modification of the first embodiment.

The peeling unit 13 in the first modification has a different laser light source from the peeling unit in the embodiment, but other configurations are the same.

The laser irradiation device 131c in this modification uses a laser whose irradiation range (spot) is smaller than the die size. The laser irradiation device 131c is configured to scan the area where the die D is located under the control of the control unit 80. The spot diameter of the laser irradiation device 131c is, for example, approximately 0.05 mm or more and 0.5 mm or less. The reflected light is not concentrated in the same location, and heating of the laser irradiation device 131c can be suppressed.

Additionally, when the spot of the laser irradiation device 131c moves inside the four sides of the die D, areas where the laser is not irradiated appear at the four corners of the die D. There is a gap between adjacent dies corresponding to the width of the dicing blade. When the dicing tape is expanded, the gap becomes wider. For example, even if the center of the spot of the laser irradiation device 131c moves onto the four sides of the die D, if the spot diameter is smaller than the above gap, the dicing tape DT under the adjacent die is directly heated. I don't do it. Thereby, it is possible to avoid use of the irradiation range limiting part 131d.

In addition, the control unit 80 may recognize the area where the die D for scanning the laser is located in advance using the wafer recognition camera 14, determine the die size, position, and shape, and scan according to the size. .

Additionally, a camera is installed in the laser irradiation section 131 within the dome plate 134, and the control section 80 illuminates the laser irradiation section with illumination light from an illumination device for the wafer recognition camera 14 from above the die D. The dicing tape DT may be photographed from below by the camera in 131. As a result, the dicing line can be recognized, and the position of the die D to be scanned can be determined. This makes it possible to scan the laser more accurately.

Additionally, the control unit 80 may control the irradiation pattern of the laser irradiation device 131c to irradiate not only in a continuous line pattern but also in a dot pattern or an intermittent line pattern. This makes it possible to control excessive heating of the heat-peelable dicing tape and shorten the laser irradiation time.

Additionally, the direction, scanning time, and speed of scanning the laser light may be set arbitrarily. As a result, the order and degree of peeling and expansion of the thermal peel dicing tape can be controlled according to the product specifications (die thickness, size, shape, etc.), and heat conduction to parts other than the peeling die can also be controlled. It becomes possible.

(Second Modification)

FIG. 9(a) is a diagram showing the intensity transition of the laser light in the first embodiment. FIG. 9(b) is a diagram showing the intensity transition of the laser light in the second modification of the first embodiment. In Figures 9(a) and 9(b), the horizontal axis indicates time (t), and the vertical axis indicates intensity of laser light (LI).

As shown in Fig. 9(a), in the first embodiment, the laser irradiation device 131c does not control the intensity of the laser beam by simple ON/OFF control. For this reason, heating (excessive heating (OH)) is performed even after foaming (FF) of the adhesive layer of the dicing tape DT. Since excessive heat is generated, the collet 22 needs to be retracted.

As shown in Fig. 9(b), in the second modification example, the laser irradiation device 131c controls the intensity of the laser beam in addition to ON/OFF. That is, the laser irradiation device 131c only irradiates at an intensity sufficient for foaming. After foaming, low-intensity preheating irradiation is continued to prevent foaming from stopping due to a drop in temperature due to heat transfer to the die D or collet 22. Thereby, it is possible to reduce the generation of excessive heat.

(Third modified example)

FIG. 10(a) and FIG. 10(b) are diagrams showing the configuration and operation of the laser irradiation device in the third modification of the first embodiment.

The laser irradiation device 131c in the third modification has an optical system such as a condenser lens 101, and is introduced from an externally installed laser light source to the laser irradiation device 131c through an optical fiber 102 or the like.

As shown in (a) of FIG. 10, the laser irradiation device 131c can change the laser irradiation range SS according to the die size (opening area of the irradiation range limiting component 131d) using an optical system. do. This makes it possible to further reduce the heating of the irradiation range limiting component 131d.

As shown in FIG. 10(b), the irradiation device 131c can change not only the irradiation range of the laser light but also the irradiation shape. As a result, since the illuminance of the obliquely irradiated laser light is uniformly irradiated to the size of the die, it is possible to perform trapezoidal processing of the laser light irradiated to the die.

(Fourth Modification)

11(a) to 11(c) are cross-sectional views of the irradiation range limiting component in the fourth modification of the first embodiment.

Since the laser light is irradiated to the irradiation range limited component 131d, it is desirable to provide heating suppression means to reduce heating to the irradiation range limited component 131d. As a result, the heating to the irradiation range limiting part 131d is reduced, and the dicing tape is used in areas other than the portions of the dicing tape DT located below the die to be peeled (die to be peeled) by the irradiation range limiting part 131d. It is possible to reduce the heating to (DT). For example, it is possible to reduce heating at a location of the dicing tape DT located below a die (adjacent die) adjacent to the die to be peeled.

Below, some examples of heating suppression means are given. The following heating suppression means may be combined.

As shown in FIG. 11 (a), on the back side (laser irradiation device 131c side) of the irradiation range limiting component 131d, a reflector 103 is oriented in a direction that does not directly reflect the laser irradiation device 131c. Prepare. This reflector is, for example, a plated plate when the laser irradiation device 131c is an infrared laser.

As shown in FIG. 11(b), the irradiation range limiting part 131d may be shaped to reduce the area in contact with the dicing tape DT. For example, a convex portion 104 and a concave portion 105 are provided on the upper surface of the irradiation range limiting part 131d. Here, it is preferable that the total area of the upper surface of the convex part 104 is smaller than the total area of the bottom surface of the concave part 105. For example, the convex portion 104 is shaped like a pin with a small upper surface area.

As shown in FIG. 11(c), a cooling mechanism 106 may be provided on the irradiation range limiting part 131d. As a cooling mechanism, a Peltier element can be mentioned, for example.

The irradiation range limiting part 131d may contain a material with low thermal conductivity, such as resin. Examples of the resin include engineer plastics such as polyetheretherketone and polyoxymethylene.

<Second Embodiment>

The structure of the peeling unit 13 of the die bonder 1 in the second embodiment is different from the first embodiment, but the other structures are the same.

Next, the configuration of the peeling unit will be explained using Fig. 12(a), Fig. 12(b), and Fig. 13. Fig. 12(a) is a front view of the peeling unit in the second embodiment. FIG. 12(b) is a front view of the mask device of the peeling unit shown in FIG. 12(a) when raised to the position of the dicing tape. Fig. 13 is a perspective view showing a part of the peeling unit shown in Fig. 12(a).

The peeling unit 13 includes a laser irradiation device 231, a holding part 232, a moving mechanism (actuator, driving part) 233, a support part 234, a stand part 135, and a mask device ( 136) and a moving mechanism (actuator, driving unit) 137.

A laser light source 231b (see FIG. 14) installed outside the peeling unit 13 is connected to the laser irradiation device 231 via an optical fiber 231a (see FIG. 14). The laser light source 231b is, for example, a laser diode (LD), and irradiates laser light with a wavelength in the infrared region. For example, the wavelength is 940 nm. The laser irradiation device 231 focuses the emitted light at a point (concentration point FP) that is a predetermined distance away from the tip of the laser irradiation device 231. The condensing point FP is set to be located on the Z1 side of the dicing tape. In other words, with the upper surface of the peeling unit 13 close to the dicing tape DT, the distance between the upper surface of the laser irradiation device 231 and the dicing tape DT is set shorter than the predetermined distance.

The holding portion 232 covers the outer periphery of the laser irradiation device 231 and holds the laser irradiation device 231. The holding portion 232 is fixed to the moving mechanism 233. The moving mechanism 233 includes a fixed portion 2331 that is extended in the Z1-Z2 direction and is fixed to the support portion 234, and a movable portion 2332 that is fixed to the holding portion 232. The moving mechanism 233 can move the holding portion 232 in the Z1-Z2 direction by moving the movable portion 2332 relative to the fixed portion 2331. As a result, the laser irradiation device 231 can move up and down, and the vertical position of the laser irradiation device 231 can be changed, making it possible to move closer to or away from the mask device 136.

The support portion 234 has a portion extending in the Z1-Z2 direction and is fixed to the moving mechanism 137. The support portion 234 has a surface on the Z1 side for supporting the pedestal portion 135. The stand portion 135 is formed in the shape of an octagonal plate when viewed in plan, and has a circular opening in the center through which the laser light passes. The stand portion 135 is supported on the Z1 side surface of the support portion 234.

The mask device 136 includes an .

The X-axis opening and closing mechanism 1361 is provided on the Z1 side of the Y1 side of the pedestal portion 135. The X-axis opening and closing mechanism 1361 moves a pair of opening and closing hooks 1362 in the X1-X2 direction. The pair of opening and closing hooks 1362 each has a rectangular plate (mask plate) as a first part extending from the X-axis opening and closing mechanism 1361 in the Z1 direction and a second part extending in the Y2 direction from the first part. has

The Y-axis opening and closing mechanism 1363 is provided on the surface of the pedestal portion 135 on the Z1 side of the X2 side. The Y-axis opening and closing mechanism 1363 moves a pair of opening and closing hooks 1364 in the Y1-Y2 direction. The pair of opening and closing hooks 1364 each has a rectangular plate (mask plate) as a first part extending in the Z1 direction from the Y-axis opening and closing mechanism 1363 and a second part extending in the X1 direction from the first part. has

The pair of opening and closing hooks 1362 and the pair of opening and closing hooks 1364 are formed of a member that shields the laser beam. A square-shaped opening of variable size is formed in the central portion by the second portion of the pair of opening and closing hooks 1362 and the second portion of the pair of opening and closing hooks 1364.

The moving mechanism 137 includes a fixed portion 1371 extending in the Z1-Z2 direction and a movable portion 1372 fixed to the support portion 234. The fixing part 1371 is fixed to the base 15 of the wafer supply part 10. The moving mechanism 137 can move the support portion 234 in the Z1-Z2 direction by moving the movable portion 1372 relative to the fixed portion 1371. As a result, the mask device 136 can move up and down, and the vertical position of the mask device 136 can be changed, making it possible to move it closer to or farther away from the dicing tape DT. For example, when the movable part 1372 shown in FIG. 12(a) moves in the Z1 direction, the support part 234 moves in the Z1 direction, and as shown in FIG. 12(b), the mask device 136 ) moves in the Z1 direction.

The effect of the laser irradiation device 231 being able to move in the Z1-Z2 direction will be explained using FIG. 7. FIG. 14 is a conceptual diagram showing the relationship between the position of the laser irradiation device shown in FIG. 12(a) and the irradiation area.

Since the laser irradiation device 231 condenses light at the converging point FP, the irradiation area on the dicing tape DT depends on the distance H between the laser irradiation device 231 and the dicing tape DT. The diameter (spot diameter (ϕ)) changes. When the distance H1 from the tip of the laser irradiation device 231 to the dicing tape DT is long, the diameter ϕ1 of the irradiation area IR1 in the dicing tape DT becomes small. When the distance H3 from the tip of the laser irradiation device 231 to the dicing tape DT is shorter than H1, the diameter ϕ3 of the irradiation area IR3 becomes larger than ϕ1. When the distance H2 from the tip of the laser irradiation device 231 to the dicing tape DT is between H1 and H3, the diameter ϕ2 of the irradiation area IR2 is the size between ϕ1 and ϕ3. do.

Therefore, when peeling die D1 with a small die size, the distance H is increased (H = H1) and the spot diameter (ϕ) is made small (ϕ = ϕ1). When peeling a die (D3) with a large die size, the distance (H) is reduced (H = H3) and the spot diameter (ϕ) is increased (ϕ = ϕ3). When the die size is to separate die D2 between die D1 and die D3, the distance (H) is set between H1 and H3 (H = H2), and the spot diameter (ϕ) is set between ϕ1 and ϕ3. It is set to a size between (ϕ=ϕ2).

Therefore, by moving the laser irradiation device 231 in the Z1-Z2 direction (up and down direction), it is possible to match the size of the die D to be peeled and the irradiation area IR. Here, the coincidence between the size of the die D and the irradiation area IR means that the die D is inscribed in the irradiation area IR. In other words, the length of the diagonal of the die D coincides with the diameter of the irradiation area IR. However, in this case, the area of die D is smaller than the area of irradiation region IR.

The effect of matching the size of the die D and the irradiation area IR will be explained using FIG. 15. Fig. 15 is a diagram showing the relationship between the diameter of a circular spot and a square die inscribed in the circular spot.

ϕ is the diameter of the circular spot in the irradiation area (IR), Sa is the area of the circular spot, Lb is the length of one side of the square die (D) inscribed in the circular spot, and Sc is the length of the square die (D). It is an area. d is the difference between the area (Sa) of the circular spot and the area (Sc) of the square die (D), and e is the difference between the area (Sc) of the square die (D) and the area (Sa) of the circular spot. The ratio, f, is the ratio of the area (Sc) of the square die (D) and the area of the circular spot at ϕ = 35.

in other words,

Sa=π(ϕ/2) ²

Lb=ϕ/√2

Sc=Lb ²

d=Sa-Sc

e=Sc/Sa

f=Sc/{π(35/2) ² }

e represents the irradiation efficiency when changing the height of the laser irradiation device 231, and f represents the irradiation efficiency when the height of the laser irradiation device 231 is fixed to the height when the spot diameter is maximum (ϕ=35). represents. When fixing the height of the laser irradiation device 231, the smaller the die size, the lower the irradiation efficiency. However, when changing the height of the laser irradiation device 231, the irradiation efficiency becomes constant regardless of the die size. In other words, the smaller the die size, the more likely it is to improve irradiation efficiency.

The operation of the mask device 136 will be explained using FIGS. 16(a) to 16(c). FIG. 16(a) is a top view showing the position of the opening/closing hook when the laser irradiation device shown in FIG. 14 is located at a distance H1 from the dicing tape. FIG. 16(b) is a top view showing the position of the opening/closing claw when the laser irradiation device shown in FIG. 14 is located at a distance H2 from the dicing tape. FIG. 16(c) is a top view showing the position of the opening/closing claw when the laser irradiation device shown in FIG. 14 is located at a distance H3 from the dicing tape.

A square opening is formed by a pair of opening and closing hooks 1362 (second portions 1362a and 1362b) and a pair of opening and closing hooks 1364 (second portions 1364a and 1364b). The distance between the second parts 1362a and the second parts 1362b in the X1- -The gap in the Y2 direction is adjusted. Here, the center of the irradiation area IR and the center of the aperture coincide.

When the second part 1362a of the opening and closing hook 1362 moves in the X1 direction, the second part 1362b moves in the X2 direction. When the second part 1362a of the opening and closing hook 1362 moves in the X2 direction, the second part 1362b moves in the X1 direction.

When the second part 1364a of the opening and closing hook 1364 moves in the Y2 direction, the second part 1364b moves in the Y1 direction. When the second part 1364a of the opening and closing hook 1362 moves in the Y1 direction, the second part 1364b moves in the Y2 direction.

Since the opening and closing hooks 1362 and 1364 are formed of a member that shields the laser beam, the opening and closing hooks 1362 and 1364 can partially mask the irradiation light from the laser irradiation device 231. Additionally, the opening and closing hooks 1362 and 1364 can change the mask area (opening area) to match the spot size (die size).

For example, as shown in (a) of FIG. 16, when the diameter of the irradiation area IR1 is ϕ1, the second opening and closing hook 1362 is opened so that the opening OP1 is inscribed in the irradiation area IR1. The spacing between the portions 1362a and 1362b and the spacing between the second portions 1364a and 1364b of the opening and closing hook 1364 are adjusted. Here, the center of the irradiation area IR1 and the center of the opening OP1 coincide. Among the radiation areas IR1, portions located in the second portions 1362a, 1362b, 1364a, and 1364b are masked.

For example, as shown in (b) of FIG. 16, when the diameter of the irradiation area IR2 is ϕ2, the second opening and closing hook 1362 is opened so that the opening OP1 is inscribed in the irradiation area IR2. The spacing between the portions 1362a and 1362b and the spacing between the second portions 1364a and 1364b of the opening and closing hook 1364 are adjusted. Here, the center of the irradiation area IR2 and the center of the opening OP2 coincide. Among the radiation areas IR2, portions located in the second portions 1362a, 1362b, 1364a, and 1364b are masked.

For example, as shown in (c) of FIG. 16, when the diameter of the irradiation area IR3 is ϕ3, the second opening and closing hook 1362 is opened so that the opening OP3 is inscribed in the irradiation area IR3. The spacing between the portions 1362a and 1362b and the spacing between the second portions 1364a and 1364b of the opening and closing hook 1364 are adjusted. Here, the center of the irradiation area IR3 and the center of the opening OP3 coincide. Among the radiation areas IR3, portions located in the second portions 1362a, 1362b, 1364a, and 1364b are masked.

The openings OP1 to OP3 shown in FIGS. 16A to 16C are square examples, but it is also possible to make the openings rectangular. This will be explained using Figures 17 and 18. Fig. 17 is a top view showing the position of the opening/closing hook when the X1-X2 direction forms an opening smaller than the Y1-Y2 direction. Fig. 18 is a top view showing the position of the opening/closing hook when the X1-X2 direction forms an opening larger than the Y1-Y2 direction.

As shown in FIG. 17, the gap in the X1- By making it smaller than the gap, the opening OP4 has a rectangular shape in which the X1-X2 direction is smaller than the Y1-Y2 direction. As a result, the portions located in the second portions 1362a, 1362b, 1364a, and 1364b of the radiation area IR4 are masked.

As shown in FIG. 18, the gap in the X1- By making it larger than the gap, the opening OP5 has a rectangular shape in which the X1-X2 direction is larger than the Y1-Y2 direction. As a result, the portions located in the second portions 1362a, 1362b, 1364a, and 1364b of the radiation area IR5 are masked.

Additionally, when laser light is irradiated to the dicing tape DT using the laser irradiation device 231, the die D may also be heated through the dicing tape DT. If the collet 22 may be heated through the die D, the collet 22 may be brought into contact with the die D. Thereby, it is possible to stabilize the die D to be peeled off. When preventing heating of the collet 22 through the die D, the collet 22 is left on standby without contacting the die D.

According to the second embodiment, it has at least one of the following effects.

(a) Since no moving blocks such as push blocks or slide blocks are used, mechanical stress is not applied to the die. As a result, peeling is possible with low stress, and damage to the die (cracks, deformation, splitting, notch, etc.) can be reduced.

(b) Since it is possible to change the distance between the laser irradiation device 231 and the dicing tape DT, it is possible to efficiently irradiate the laser light to the die to be peeled. This makes it possible to peel the die in a short time.

(c) Since a mask of irradiation light is disposed near the back surface of the dicing tape DT, it is possible to irradiate the laser light only to the die to be peeled. This makes it possible to prevent dies other than the peeling target from peeling at timings other than those desired.

(d) Since the die peeling time can be shortened, it is possible to increase the processing capacity (UPH) of the die bonder.

(e) Since it is possible to reduce the stress on the die when peeling off the die, the quality of semiconductor products (semiconductor devices) can be improved.

<Modification of the second embodiment>

Hereinafter, some representative modifications of the second embodiment will be given as examples. In the description of the modification below, the same symbols as those in the above-described second embodiment may be used for parts having the same structure and function as those described in the above-described second embodiment. For the explanation of these parts, the explanation in the above-described second embodiment may be appropriately used within the scope of technical contradiction. In addition, all or part of the above-described embodiments and a plurality of modified examples may be applied in combination as appropriate within the scope of technical contradiction.

(First modification)

The mask device in the first modification will be explained using FIG. 19. Fig. 19 is a top view showing a part of the mask device in the first modification of the second embodiment.

In the second embodiment, an example using two pairs of opening and closing hooks 1362 and 1364 has been described, but only one pair of opening and closing hooks may be used. In the first modification, the peeling unit 13 is provided with an A pair of opening and closing hooks 1364 (second parts 1364a, 1364b) are not provided. As a result, the portion located in the second portions 1362a and 1362b of the radiation area IR is masked.

The Y1 and Y2 sides of the irradiation area (IR) are not masked, but in the case of a rectangular shape in which the X1-X2 direction of the die (D) is smaller than the Y1-Y2 direction, the Since the area protruding from (D) is small, the influence on the adjacent die is small.

In addition, the peeling unit 13 is provided with a Y-axis opening and closing mechanism 1363 and a pair of opening and closing hooks 1364 (second portions 1364a and 1364b), and an X-axis opening and closing mechanism 1361 and a pair of opening and closing hooks 1364. The hook 1362 (second parts 1362a, 1362b) may not be provided. In this case, it is effective when the die D has a rectangular shape in which the X1-X2 direction is larger than the Y1-Y2 direction.

(Second Modification)

The mask device in the second modification will be explained using FIG. 20. Fig. 20 is a top view showing a mask device in a second modification of the second embodiment.

In the second embodiment, an example has been described in which the opening and closing hooks 1362 and 1364 are opened and closed based on the center of the irradiation area and the opening OP is located at the center of the irradiation area IR. However, the opening OP is located in the center of the irradiation area IR. It may be positioned offset from the center of (IR).

The mask device 136 in the second modification includes ) is provided.

The X-axis opening and closing mechanism 1361a moves the opening and closing hook (second part) 1362a in the X1-X2 direction. The X-axis opening and closing mechanism 1361b moves the opening and closing hook (second part) 1362b in the X1-X2 direction. The opening and closing hook (second part) 1362a and the opening and closing hook (second part) 1362b are independently operable.

The Y-axis opening and closing mechanism 1363a moves the opening and closing hook (second part) 1364a in the Y1-Y2 direction. The Y-axis opening and closing mechanism 1363b moves the opening and closing hook (second part) 1364b in the Y1-Y2 direction. The opening and closing hook (second part) 1364a and the opening and closing hook (second part) 1364b are independently operable.

With this configuration, it is possible to place the opening OP in an offset area other than the center of the irradiation area IR, so that it is offset from the center of the irradiation area IR (the center of the irradiation light from the laser irradiation device 231). It becomes possible to investigate by offset. Accordingly, even when the center of the die D to be peeled off is located offset from the center of the irradiation area IR, the wafer holding support 12 is not slightly moved and the area where the die D is located is irradiated. It becomes possible to do so.

As mentioned above, the disclosure made by the present inventors has been specifically described based on the first embodiment, the second embodiment, and their modifications. However, the present disclosure is limited to the first embodiment, the second embodiment, and their modifications. It goes without saying that it is not limited to and can be changed in various ways.

For example, in the first and second embodiments, the case of using a heatable peeling tape as the dicing tape was explained as an example, but it is not limited to this, and an ultraviolet peeling tape may be used. In this case, the laser light source irradiates ultraviolet rays.

In addition, in the first embodiment, an example in which the laser irradiation unit 131 is disposed within the dome plate 134 has been described, but this is not limited to this, and the laser irradiation unit 131 is installed outside the dome plate 134, so that the wafer It may be possible to scan the entire laser beam. In this case, if recognition accuracy of the pickup position is not required, the dome plate does not need to be provided. This makes it possible to pick up the wafer by irradiating the laser light only to the die to be peeled, even without moving the wafer. In addition, when recognition accuracy of the pickup position is required, the dicing tape may be fixed with a dome plate after irradiating the laser light only to the portion of the dicing tape where the die to be picked up is located.

In addition, in the second embodiment, an example is explained in which the size of the irradiation area is changed by the laser irradiation device 231 changing the vertical position within the peeling unit 13 (by the laser irradiation device 231). However, the size of the irradiation area may be changed by, for example, a lens in the laser irradiation device 231.

In addition, in the first embodiment, an example of using a die attach film was explained, but it is not necessary to provide a preform part for applying an adhesive to the substrate and use a die attach film.

In addition, in the first embodiment, a die bonder was described that picks up a die from a wafer supply unit with a pickup head, places it on an intermediate stage, and bonds the die loaded on the intermediate stage to a substrate with a bonding head. However, it is limited to this. Rather, it is applicable to a die bonding device that picks up a die from a die supply unit.

For example, it can be applied to a die bonder that bonds the die from the wafer supply to the substrate with a bonding head, without an intermediate stage or pickup head.

In addition, it can be applied to a flip chip bonder that picks up a die from a wafer supply, rotates the die pickup head upward, transfers the die to the bonding head, and bonds it to the substrate with the bonding head, without an intermediate stage.

Although the first embodiment was explained using a die bonder as an example, it can also be applied to a semiconductor manufacturing device that stacks picked dies on a tray.

1: Die bonder (semiconductor manufacturing device)
12: wafer holding support
13: peeling unit
136: mask device
231: Laser irradiation device

Claims (13)

a wafer holding support formed of an adhesive sheet that is peeled by a laser beam and holding a dicing tape to which a die is attached;
Peeling unit provided below the dicing tape
Equipped with
The peeling unit is,
A laser irradiation device for concentrating the emitted light at a point spaced apart by a predetermined distance,
A mask device having a mask that limits the irradiation area formed by the irradiation light from the laser irradiation device.
Equipped with
A semiconductor manufacturing device in which the size of the irradiation area can be changed by the laser irradiation device. The semiconductor manufacturing apparatus according to claim 1, wherein the vertical position of the laser irradiation device within the peeling unit is changeable. The semiconductor manufacturing apparatus according to claim 2, wherein in a state where the upper surface of the peeling unit is close to the dicing tape, the distance between the upper surface of the laser irradiation device and the dicing tape is set shorter than the predetermined distance. The semiconductor manufacturing apparatus according to claim 3, wherein an area of the irradiation area at the position of the mask is set to be larger than an area of the die. The semiconductor manufacturing apparatus of claim 1, wherein the size of the irradiation area of the mask is changeable. The semiconductor manufacturing apparatus according to claim 5, wherein the mask has a square-shaped opening, and the size of the opening is changeable. The semiconductor manufacturing apparatus according to claim 6, wherein the center of the opening can be offset from the center of the irradiation light from the laser irradiation device. The semiconductor manufacturing apparatus according to claim 1, wherein the peeling unit further includes a driving part that changes the vertical position of the mask device. a wafer holding support formed of an adhesive sheet that is peeled by a laser beam and holding a dicing tape to which a die is attached;
Peeling unit provided below the dicing tape
Equipped with
The peeling unit has a cavity having an opening at the top and a laser irradiation unit having a laser irradiation device provided below the opening,
The laser irradiation device is provided so that the irradiation direction of the laser light irradiated from the laser irradiation device is inclined with respect to the normal direction of the surface of the dicing tape, and the laser light is irradiated to the dicing tape through the opening, Semiconductor manufacturing equipment. The method of claim 9, wherein the irradiation area of the laser irradiation device is smaller than the die,
The semiconductor manufacturing apparatus, wherein the laser irradiation device is configured to scan the irradiation area. The method of claim 10 also:
With a camera,
A semiconductor manufacturing apparatus comprising a control unit configured to recognize in advance, by the camera, a range in which the laser irradiation device scans the irradiation area. It is a peeling unit formed from an adhesive sheet that is peeled off by a laser beam and provided below the dicing tape to which the die is attached,
A laser irradiation device for concentrating the emitted light at a point spaced apart by a predetermined distance,
A mask device having a mask that limits the irradiation area formed by the irradiation light from the laser irradiation device.
Equipped with
A peeling unit in which the size of the irradiation area can be changed by the laser irradiation device. It is formed of an adhesive sheet that is peeled by a laser beam, and is provided with a wafer holding support for holding a dicing tape to which a die is attached, and a peeling unit provided below the dicing tape, wherein the peeling unit is A mask device comprising a laser irradiation device that condenses light at a point spaced apart by a predetermined distance and a mask device that limits an irradiation area formed by irradiation light from the laser irradiation device, and the irradiation is performed by the laser irradiation device. A process of introducing a wafer ring holding the dicing tape into a semiconductor manufacturing equipment whose area size can be changed;
Process of peeling the die from the dicing tape
A method of manufacturing a semiconductor device having a.

Images