KR20240025474A - Compound, photoelectric device, absorption sensor, sensor embedded display panel, and electronic device - Google Patents

Abstract

A compound represented by the following formula (1) and a photoelectric device, light absorption sensor, and electronic device including the same are provided.
[Formula 1]

In Formula 1, the definition of each substituent is as described in the specification.

Description

Compound, photoelectric element, light absorption sensor, sensor-embedded display panel and electronic device {COMPOUND, PHOTOELECTRIC DEVICE, ABSORPTION SENSOR, SENSOR EMBEDDED DISPLAY PANEL, AND ELECTRONIC DEVICE}

It relates to compounds, photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices.

Recently, the demand for display devices that implement biometric recognition technology to authenticate a person by extracting specific human biometric information or behavioral characteristic information with an automated device has been increasing, especially in areas such as finance, healthcare, and mobile. Accordingly, display devices equipped with sensors capable of biometric recognition are being researched.

These sensors can be placed at the bottom of the display panel or manufactured as a separate module and mounted on the outside of the display panel. However, if the sensor is placed at the bottom of the display panel, performance may deteriorate because it must pass through the display panel, various films and/or parts to recognize objects, and if the sensor is manufactured and mounted as a separate module, design and usability may be reduced. There are limitations in terms of this. Therefore, a sensor-embedded display panel including a sensor that is integrated with the display panel and can improve performance is being proposed.

The photoelectric device used in the above sensor is a device that converts light into an electrical signal using the photoelectric effect and may include a photodiode and a phototransistor.

Sensors containing photodiodes (eg, image sensors) have higher resolutions day by day, and pixel sizes are becoming smaller accordingly. In the case of silicon photodiodes, which are currently mainly used, sensitivity may decrease because the absorption area decreases as the pixel size decreases. Accordingly, organic materials that can replace silicon are being researched.

Organic materials have a large absorption coefficient and can selectively absorb light in a specific wavelength range depending on their molecular structure, so they can simultaneously replace photodiodes and color filters, which is very advantageous for improving sensitivity and high integration.

Therefore, interest in organic materials that can be used in these sensors is increasing.

One embodiment provides a compound that can selectively absorb light in the green wavelength range and improve the external quantum efficiency and residual charge characteristics of a device.

Another embodiment provides an optoelectronic device that selectively absorbs light in the green wavelength region and has excellent external quantum efficiency and residual charge characteristics.

Another embodiment provides a light absorption sensor including the photoelectric device.

Another embodiment provides a sensor-embedded display panel including the photoelectric element or light absorption sensor.

Another embodiment provides an electronic device including the photoelectric device or light absorption sensor.

According to one embodiment, a compound represented by the following formula (1) is provided.

[Formula 1]

In Formula 1,

Ar ¹ and Ar ² are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a fused ring thereof,

G is -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -N=, -NR ^a -, -BR ^b -, -SiR ^c R ^d -, -SiR ^cc R ^dd -, -GeR ^e R ^f -, -GeR ^ee R ^ff -, -(CR ^g R ^h ) _n1 -, -(CR ^gg R ^hh )-, -(C(R ⁱ )=C(R ^j ))- and -(C(R ⁱⁱ )=C(R ^jj ))-, where R ^a , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , R ^h , R ⁱ and R ^j are each independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group and substituted or unsubstituted C1 to C10 alkoxy group, and R ^cc and R ^dd , R ^ee and R ^ff , R ^gg and R ^hh , or each pair of R ⁱⁱ and R ^jj may be connected to each other to form a ring structure, and n1 of -(CR ^g R ^h ) _n1 - is 1 or 2),

^{R _ _} and z is an integer from 0 to 2, x+y+z is 4 or less,

R ^x and R ^y exist in para positions to each other,

R ¹ is hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group,

Ar ³ is C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group) , a cyano group or a cyano-containing group), a substituted or unsubstituted C6 to C30 hydrocarbon ring group having at least one functional group selected from the group consisting of C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group). A substituted or unsubstituted group having at least one functional group selected from the group consisting of It is a C2 to C30 heterocyclic group or a fused ring thereof.

In ^Formula 1 ^{, R} .

In Formula 1, G is -(CR ^g R ^h ) _n1 - or -(CR ^gg R ^hh )- (where R ^g and R ^h are each independently hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group) and substituted or unsubstituted C1 to C10 alkoxy groups, R ^gg and R ^hh may be connected to each other to form a ring structure and n1 is 1 or 2), and R ^x and R ^y may exist in para positions to each other. there is.

In Formula 1, at least one of Ar ¹ and Ar ² may include a hetero atom selected from nitrogen (N), sulfur (S), and selenium (Se) at position 1.

In Formula 1, the ring group containing Ar ¹ and Ar ² may be selected from moieties represented by Formula 2 below.

[Formula 2]

In Formula 2,

G is the same as in Formula 1,

R ¹¹ to R ¹⁴ and R ²¹ to R ²⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. , substituted or unsubstituted C3 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or optionally two of R ¹¹ to R ¹⁴ adjacent to each other may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group, and optionally, two adjacent ones of R ²¹ to R ²⁴ may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group,

* is the point connected to Chemical Formula 1.

In Formula 2, R ¹³ and R ²³ may each independently be a substituted or unsubstituted C1 to C30 alkyl group or a substituted or unsubstituted C1 to C30 alkoxy group.

In Formula 1, Ar ¹ and Ar ² are a C6 to C30 arene group unsubstituted by an electron withdrawing group represented by Ar ³ , and a C3 to C30 heteroarene group unsubstituted by an electron withdrawing group represented by Ar ³ . and condensed rings thereof.

In Formula 1, the ring structure may be a substituted or unsubstituted C5 to C30 hydrocarbon ring group or a substituted or unsubstituted C2 to C30 heterocyclic group.

In Formula 1, the ring structure may include a moiety represented by Formula 3 below.

[Formula 3]

In Formula 3 above,

Ar ³³ and Ar ³⁴ are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a condensed ring thereof,

* means the point connected to Chemical Formula 1.

In Formula 1, each ring structure may include one of the moieties represented by Formula 4 below.

[Formula 4]

In Formula 4 above,

X ^a and X ^b are each independently -O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -SiR ^bb R ^cc -, -GeR ^d R ^e - or -GeR ^dd R ^ee -, where R ^a1 , R ^a2 , R ^b , R ^c , R ^d and R ^e are each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C6 to C20 aryloxy group or substituted or unsubstituted C3 to C20 heteroaryl group, and one pair of R ^bb and R ^cc or R ^dd and R ^ee may each be linked to each other to form a ring structure),

L ^a is -O-, -S-, -Se-, -Te-, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -GeR ^d R ^e -, -(CR ^f R ^g ) _n1 -, -(C(R ^p )=N))- and single bonds selected from R ^a1 , R ^a2 , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , and R ^p is each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, or substituted or unsubstituted is a C6 to C20 aryloxy group and n1 of -(CR ^f R ^g ) _n1 - is 1 or 2),

Hydrogen of each ring is optionally deuterium, halogen, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, and substituted or unsubstituted C6 may be replaced with at least one substituent selected from a C20 aryloxy group,

* is the point connected to Chemical Formula 1.

In Formula 4, CH present in the aromatic ring of moiety (3), (4), (5), (6), (7), (8) or (9) may be replaced with N.

In Formula 1, Ar ³ may be a cyclic group represented by Formula 5 below.

[Formula 5]

In Formula 5 above,

Ar ³ ' is selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

* is the point connected to Chemical Formula 1.

In Formula 1, Ar ³ may be a cyclic group represented by any one of the following Formulas 6A to 6G.

[Formula 6A]

In Formula 6A,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (wherein R ^c is selected from hydrogen, deuterium and substituted or unsubstituted C1 to C10 alkyl groups),

R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are the same or different and are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted selected from a ringed C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or R ¹² and R ¹³ and R ¹⁴ and R ¹⁵ each exist independently or are connected to each other Can form fused aromatic rings,

n is 0 or 1,

* is the point connected to Formula 1,

[Formula 6B]

In Formula 6B,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is O, S, Se, Te and CR ^a R ^b (where R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group or a cyano-containing group,

R ¹¹ and R ¹² are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C1 to C30 aryl group. C4 to C30 selected from heteroaryl group, halogen, cyano group (-CN), and combinations thereof,

* is the point connected to Formula 1,

[Formula 6C]

In Formula 6C,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), and combinations thereof,

* is the point connected to Formula 1,

[Formula 6D]

In Formula 6D,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),

G ¹ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof, and R ¹² and R ¹³ exist independently or are connected to each other to form a fused aromatic ring. You can do it,

n is 0 or 1,

* is the point connected to Formula 1,

[Formula 6E]

In Formula 6E,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),

G ² is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof,

n is 0 or 1,

* is the point connected to Formula 1,

[Formula 6F]

In Formula 6F,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

R ¹¹ is hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyanogroup. selected from furnace-containing groups and combinations thereof,

G ³ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

* is the point connected to Formula 1,

[Formula 6G]

In the above formula 6G,

R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group,

Z ¹ to Z ⁴ are each independently selected from O, S, Se, Te and CR ^c R ^d , where R ^c and R ^d are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

* is the point connected to Chemical Formula 1.

The compound may have a maximum absorption wavelength (λ _max ) in a wavelength range of about 530 nm to about 555 nm in a thin film state.

The sublimation temperature of the compound represented by Formula 1 may be about 280°C or less.

The compound may exhibit an absorption curve with a full width at half maximum (FWHM) of about 50 nm to about 150 nm in a thin film state.

According to another embodiment, a first electrode and a second electrode facing each other, and

It includes a light absorption layer located between the first electrode and the second electrode,

The light absorption layer absorbs light in the red wavelength spectrum, green wavelength spectrum, blue wavelength spectrum, infrared wavelength spectrum, or a combination thereof,

The light absorption layer provides a photoelectric device (eg, an organic photoelectric device) including a compound including the compound represented by Chemical Formula 1.

According to another embodiment, a light absorption sensor including the photoelectric device is provided.

The light absorption sensor is located on a semiconductor substrate on which a plurality of first photo-sensing elements for detecting light in a blue wavelength region and a plurality of second photo-sensing elements for detecting light in a red wavelength region are integrated, and an upper part of the semiconductor substrate, It may include the photoelectric element that detects light in the green wavelength range.

The light absorption layer includes a p-type semiconductor and an n-type semiconductor, the p-type semiconductor includes a compound represented by Formula 1, and the n-type semiconductor includes fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or It may include a thiophene derivative or a compound represented by the following formula (7).

[Formula 7]

In Formula 7 above,

^{X 5 and _} C3 to C30 heterocyclic group, halogen, or cyano group),

R ⁸¹ to R ⁸⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, or cyano group. or a combination thereof.

The first photo-sensing device and the second photo-sensing device may be vertically stacked on a semiconductor substrate.

The light absorption sensor may further include a color filter layer including a blue filter that selectively transmits light in a blue wavelength region and a red filter that selectively transmits light in a red wavelength region.

The light absorption sensor may be a stack of the photoelectric elements: a green photoelectric element, a blue photoelectric element that senses light in a blue wavelength range, and a red photoelectric element that detects light in a red wavelength range.

According to one embodiment, it includes a light absorption sensor including a substrate, a light emitting element located on the substrate and including a light emitting layer, and a light absorption layer located on the substrate and arranged in parallel with the light emitting layer along the plane direction of the substrate, The light absorption layer absorbs light in the red wavelength spectrum, green wavelength spectrum, blue wavelength spectrum, infrared wavelength spectrum, or a combination thereof, and the light absorption layer includes the compound represented by Formula 1. Provided is a sensor-embedded display panel.

The light-emitting device may include first, second, and third light-emitting devices that emit light of different wavelength spectra, and the light absorption sensor detects light emitted from at least one of the first, second, and third light-emitting devices. Light reflected by the recognition target can be absorbed and converted into an electrical signal.

The light-emitting device and the light absorption sensor may each include a common electrode that applies a common voltage to the light-emitting device and the light absorption sensor, and the sensor-embedded display panel has an electrode between the light-emitting layer and the common electrode and between the light-emitting layer and the common electrode. It may further include a first common auxiliary layer continuously formed between the electrodes.

The difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the compound represented by Formula 1 may be about 1.2 eV or less.

The sensor-embedded display panel may further include a second common auxiliary layer continuously formed between the light-emitting layer and the substrate and between the light-absorbing layer and the substrate.

The light-emitting device may include first, second, and third light-emitting devices that emit any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, and the light absorption layer may include the first, second, and third light-emitting devices. Light of the same wavelength spectrum as the light emitted from at least one of the light emitting devices can be absorbed.

The sensor-embedded display panel may include a display area that displays color, and a non-display area excluding the display area, and the light absorption sensor may be located in the non-display area.

The display area includes a plurality of first sub-pixels that display red and include the first light-emitting device, a plurality of second sub-pixels that display green and include the second light-emitting device, and a plurality of second sub-pixels that display blue and include the second light-emitting device. It may include a plurality of third sub-pixels including a light-emitting element, and the light absorption sensor may be located between at least two selected from the first sub-pixel, the second sub-pixel, and the third sub-pixel.

The light absorption layer includes a p-type semiconductor and an n-type semiconductor, the p-type semiconductor includes a compound represented by Formula 1, and the n-type semiconductor includes fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or It may include a thiophene derivative or a compound represented by Formula 7 above.

According to another embodiment, an electronic device including the sensor or a sensor-embedded display panel is provided.

The compound has excellent light absorption, external quantum efficiency, and residual charge characteristics in the entire green wavelength range, so it can be suitably used in photoelectric devices or light absorption sensors, especially sensor-embedded display panels.

1 is a cross-sectional view showing a photoelectric device according to an embodiment;
Figure 2 is a cross-sectional view showing a photoelectric device according to another embodiment;
3 is a plan view schematically showing an organic CMOS image sensor according to an embodiment;
Figure 4 is a cross-sectional view of the organic CMOS image sensor of Figure 3;
5 is a cross-sectional view schematically showing an organic CMOS image sensor according to another embodiment;
6 is a cross-sectional view schematically showing an organic CMOS image sensor according to another embodiment;
7 is a cross-sectional view of an organic CMOS image sensor according to another embodiment;
8A is a schematic diagram schematically showing an organic CMOS image sensor according to another embodiment;
Figure 8b is a cross-sectional view of the organic CMOS image sensor shown in Figure 8a;
9 is a plan view showing an example of a sensor-embedded display panel according to an implementation;
10 is a cross-sectional view showing an example of a sensor-embedded display panel according to an implementation;
11 is a cross-sectional view showing another example of a sensor-embedded display panel according to one implementation;
12 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an embodiment;
FIG. 13 is a schematic diagram illustrating an example of the configuration of an electronic device according to an implementation.

Hereinafter, implementation examples will be described in detail so that those skilled in the art can easily implement them. However, the actually applied structure may be implemented in various different forms and is not limited to the implementation example described here.

In the drawing, the thickness is enlarged to clearly express various layers and areas. When a part of a layer, membrane, region, plate, etc. is said to be “on” another part, this includes not only cases where it is “directly above” the other part, but also cases where there is another part in between. Conversely, when a part is said to be “right on top” of another part, it means that there is no other part in between.

In order to clearly explain the present embodiment in the drawings, parts not related to the description are omitted, and the same reference numerals are used for identical or similar components throughout the specification.

As used herein, “at least one of A, B or C”, “one of A, B, C or a combination thereof” and “one of A, B, C and a combination thereof” refer to each component and its refers to any combination (e.g., A; B; C; A and B; A and C; B and C; or A, B, and C).

In this specification, the terms “lower” and “upper” are only for convenience of description and do not limit the positional relationship.

Unless otherwise defined below, “substituted” means that the hydrogen atom of a compound or functional group is halogen (F, Br, Cl or I), hydroxy group, nitro group, cyano group, amine group, azido group, amidino group, Hydrazino group, hydrazono group, carbonyl group, carbamyl group, thiol group, ester group, carboxyl group or salts thereof, sulfonic acid group or salts thereof, phosphoric acid or salts thereof, C1 to C30 alkyl group, C2 to C30 alkenyl group, C2 to C30 alkyl group. Nyl group, C6 to C30 aryl group, C3 to C30 heteroaryl group, C7 to C30 arylalkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heterocyclic group, C3 to C20 heteroarylalkyl group, C3 to C30 It means substituted with a substituent selected from cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to C15 cycloalkynyl group, C3 to C30 heterocycloalkyl group, cyano-containing group, and combinations thereof.

Additionally, in this specification, unless otherwise defined, “hetero” means containing 1 to 4 hetero atoms selected from N, O, S, Se, Te, P, and Si.

In this specification, unless otherwise defined, “alkyl group” refers to a monovalent straight-chain or branched-chain saturated hydrocarbon group, such as methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, t -Butyl group, pentyl group, hexyl group, etc. can be mentioned.

In this specification, unless otherwise defined, “alkoxy group” is expressed as -OR, where R may be the alkyl group described above.

In this specification, unless otherwise defined, a “cycloalkyl group” may be a monovalent hydrocarbon ring group in which the ring-forming atom is carbon, for example, a cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, etc. .

In this specification, unless otherwise defined, “aryl group” refers to a substituent in which all elements of a cyclic functional group have π-orbitals, and these π-orbitals form conjugation. , monocyclic, polycyclic, or fused ring polycyclic (i.e., a ring splitting adjacent pairs of carbon atoms) functional groups.

In this specification, unless otherwise defined, “cyano-containing group” means a monovalent functional group in which at least one hydrogen of a C1 to C30 alkyl group, a C2 to C30 alkenyl group, or a C2 to C30 alkynyl group is replaced with a cyano group. can do. In addition, the cyano-containing group may include a divalent functional group such as a functional group expressed as =CR ^x' -(CR ^x R ^y ) _p -CR ^y' (CN) ₂ , where R ^x , R ^y , R ^{x '} and R ^y' are each independently hydrogen or a C1 to C10 alkyl group, and p is an integer from 0 to 10 (or 1 to 10). In addition, specific examples of the cyano-containing group as a monovalent functional group include dicyanomethyl group, dicyanovinyl group, and cyanoethynyl group. In this specification, the cyano-containing group does not include a functional group containing only a cyano group (-CN).

In this specification, unless otherwise defined, “combination” means substituents in which one substituent is substituted for another substituent, exist in fusion with each other, or are connected to each other by a single bond or C1 to C10 alkylene group.

In this specification, unless otherwise defined, “hydrocarbon ring group” may be a C3 to C30 hydrocarbon ring group. The hydrocarbon ring group is an arene group (for example, a C6 to C30 arene group, a C6 to C20 arene group, or a C6 to C10 arene group), an alicyclic hydrocarbon ring group (for example, a C3 to C30 cycloalkyl group, a C5 to C30 cycloalkyl group, It may be a C3 to C20 cycloalkyl group or a C3 to C10 cycloalkyl group) or a fused ring group thereof. For example, the fused ring group may mean a fused ring of an aromatic ring (arene ring) and a non-aromatic ring (alicyclic ring), for example, a C6 to C30 arene group, a C6 to C20 arene group, or a C6 to C10 arene group. At least one aromatic ring (arene ring) such as a C3 to C30 cycloalkyl group, a C3 to C20 cycloalkyl group, or a C3 to C10 cycloalkyl group may include a fused ring in which at least one non-aromatic ring (alicyclic ring) is connected to each other. You can.

In this specification, unless otherwise defined, “heterocyclic group” may be a C2 to C30 heterocyclic group. The heterocyclic group is an arene group (for example, a C6 to C30 arene group, a C6 to C20 arene group, or a C6 to C10 arene group), an alicyclic hydrocarbon ring group (for example, a C3 to C30 cycloalkyl group, a C3 to C20 cycloalkyl group, or A ring in which at least one, for example, 1 to 3 carbons of a ring group selected from C3 to C10 cycloalkyl groups) and fused ring groups thereof are substituted with a hetero atom selected from N, O, S, Se, Te, P and Si. It can mean energy. That is, in the heterocyclic group, one or more carbon atoms of the heterocyclic group may be substituted with a thiocarbonyl group (C=S).

In this specification, unless otherwise defined, “arene group” is a hydrocarbon group having an aromatic ring, including monocyclic and multicyclic hydrocarbon groups, and the additional ring of the multicyclic hydrocarbon group may be an aromatic ring or a non-aromatic ring. there is. “Heteroarene group” means an arene group containing 1 to 3 heteroatoms selected from N, O, S, Se, Te, P and Si in the ring.

In this specification, unless otherwise defined, “aromatic hydrocarbon group” includes, but is not limited to, a phenyl group, a naphthyl group, a C6 to C30 aryl group, a C6 to C30 arylene group, etc.

In the present specification, unless otherwise defined, the aromatic ring may include a fused ring of an aromatic ring and an alicyclic ring. The “aromatic ring” means a C6 to C20 aryl group (eg, C6 to C10 aryl group) or a C2 to C20 heteroaryl group (eg, C2 to C4 heteroaryl group). The “alicyclic ring” refers to a C3 to C10 cycloalkyl group or a C2 to C10 heterocycloalkyl group.

Here, “substantially” or “approximately” or “approximately” means a deviation within an acceptable range, taking into account not only the stated value, but also the error associated with the measurement and measurement of the measurand. Includes average. For example, “substantially” or “approximately” or “about” can mean within ±10%, ±5%, ±3%, or ±1% or within a standard deviation of the stated value.

Unless otherwise defined herein, the energy level is the highest occupied molecular orbital (HOMO) energy level or the lowest unoccupied molecular orbital (LUMO) energy level.

Unless otherwise defined herein, the work function or energy level is expressed as an absolute value from the vacuum level. Also, if the work function or energy level is deep, high or large, it means that the absolute value is large with the vacuum level set to "0eV", and if the work function or energy level is shallow, low or small means the absolute value is set to "0eV" in the vacuum level. It means that the value is small. Additionally, the difference in work function and/or energy level may be a value obtained by subtracting a small absolute value from a large absolute value.

Unless otherwise defined below, the HOMO energy level is the amount of photoelectrons emitted according to the energy by irradiating UV light to the thin film using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). can be evaluated.

Unless otherwise defined below, the LUMO energy level is obtained by obtaining the energy band gap using a UV-Vis spectrometer (Shimadzu Corporation) and then calculating the LUMO energy level from the energy band gap and the already measured HOMO energy level. You can.

Hereinafter, a compound according to one embodiment will be described. The compound is represented by the following formula (1).

[Formula 1]

In Formula 1,

Ar ¹ and Ar ² are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a fused ring thereof,

G is -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -N=, -NR ^a -, -BR ^b -, -SiR ^c R ^d -, -SiR ^cc R ^dd -, -GeR ^e R ^f -, -GeR ^ee R ^ff -, -(CR ^g R ^h ) _n1 -, -(CR ^gg R ^hh )-, -(C(R ⁱ )=(C(R ^j ))- and -(C(R ⁱⁱ )=(C(R ^jj ))-, where R ^a , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , R ^h , R ⁱ and R ^j are each independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group and substituted or unsubstituted C1 to C10 alkoxy group, and R ^cc and R ^dd , R ^ee and R ^ff , R Each pair of ^gg and R ^hh , or R ⁱⁱ and R ^jj may be connected to each other to form a ring structure, and n1 of -(CR ^g R ^h ) _n1 - is 1 or 2),

^{R _ _} and z is an integer from 0 to 2, x+y+z is 4 or less,

R ^x and R ^y exist in para positions to each other,

R ¹ is hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group,

Ar ³ is C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group) , a cyano group or a cyano-containing group), a substituted or unsubstituted C6 to C30 hydrocarbon ring group having at least one functional group selected from the group consisting of C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group). A substituted or unsubstituted group having at least one functional group selected from the group consisting of It is a C2 to C30 heterocyclic group or a fused ring thereof.

The compound represented by Formula 1 includes an electron donor moiety of an N-containing heteroaromatic ring group, a linker containing a phenylene group having two or more substituents at the para position, and an electron acceptor represented by Ar ³ Contains an electron acceptor moiety.

In ^Formula 1 ^{, R} .

Two or more substituents present in the linker are present at the para position, making it easy to control the absorption wavelength of the compound and improving the charge mobility of the compound by inducing a planar structure.

In Formula 1, G is -(CR ^g R ^h ) _n1 - or -(CR ^gg R ^hh )- (where R ^g and R ^h are each independently hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group) and substituted or unsubstituted C1 to C10 alkoxy groups, R ^gg and R ^hh may be connected to each other to form a ring structure and n1 is 1 or 2), and R ^x and R ^y may exist in para positions to each other. there is.

In Formula 1, at least one of Ar ¹ and Ar ² may include a hetero atom selected from nitrogen (N), sulfur (S), and selenium (Se) at position 1.

In Formula 1, Ar ¹ and Ar ² are each independently a substituted or unsubstituted benzene ring, a substituted or unsubstituted naphthalene ring, a substituted or unsubstituted anthracene ring, or a substituted or unsubstituted indene. It may be a ring, a substituted or unsubstituted phenanthrene ring, a substituted or unsubstituted fluorene ring, or a substituted or unsubstituted acenaphthylene ring. Here, “substituted” means that the hydrogen of the aromatic ring is deuterium, C1 to C30 alkyl group, C1 to C30 alkoxy group, C6 to C30 aryl group, C3 to C30 heteroaryl group, C2 to C30 acyl group, halogen, cyano group (- CN), cyano-containing group, nitro group, -SiR ^a R ^b R ^c (where R ^a , R ^b and R ^c are each independently selected from hydrogen and substituted or unsubstituted C1 to C10 alkyl group) and their It means being replaced with a substituent selected from the combination.

In Formula 1, Ar ¹ and Ar ² are each independently a substituted or unsubstituted thiophene ring, a substituted or unsubstituted cellulophene ring, a substituted or unsubstituted tellurophene ring, or a substituted or unsubstituted pyridine ring. , substituted or unsubstituted pyrimidine ring, substituted or unsubstituted pyrazine ring, substituted or unsubstituted indole ring, substituted or unsubstituted quinoline ring, substituted or unsubstituted isoquinoline ring, substituted or unsubstituted quinoxaline. It may be a ring, a substituted or unsubstituted quinazoline ring, a substituted or unsubstituted carbazole ring, a substituted or unsubstituted phenazine ring, or a substituted or unsubstituted phenanthroline ring. Here, “substituted” means that the hydrogen of the aromatic ring is deuterium, C1 to C30 alkyl group, C1 to C30 alkoxy group, C6 to C30 aryl group, C3 to C30 heteroaryl group, C2 to C30 acyl group, halogen, cyano group (- CN), cyano-containing group, nitro group, -SiR ^a R ^b R ^c (where R ^a , R ^b and R ^c are each independently selected from hydrogen and substituted or unsubstituted C1 to C10 alkyl group) and their It means being replaced with a substituent selected from the combination.

In Formula 1, G is -(CR ^g R ^h ) _n1 - or -(CR ^gg R ^hh )- (where R ^g and R ^h are each independently hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group) and substituted or unsubstituted C1 to C10 alkoxy groups, R ^gg and R ^hh may be connected to each other to form a ring structure and n1 is 1 or 2), and R ^x and R ^y may exist in para positions to each other. there is.

In Formula 1, at least one of Ar ¹ and Ar ² may include a hetero atom selected from nitrogen (N), sulfur (S), and selenium (Se) at position 1.

In Formula 1, the ring group containing Ar ¹ and Ar ² may be selected from moieties represented by Formula 2 below.

[Formula 2]

In Formula 2,

G is the same as in Formula 1,

R ¹¹ to R ¹⁴ and R ²¹ to R ²⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. , substituted or unsubstituted C3 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or optionally two of R ¹¹ to R ¹⁴ adjacent to each other may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group, and optionally, two adjacent ones of R ²¹ to R ²⁴ may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group,

* is the point connected to Chemical Formula 1.

In Formula 1, Ar ¹ and Ar ² may not include the electron-withdrawing group represented by Ar ³ . That is, Ar ¹ and Ar ² are a C6 to C30 arene group unsubstituted by an electron withdrawing group represented by Ar ³ , a C3 to C30 heteroarene group unsubstituted by an electron withdrawing group represented by Ar ³ , and condensations thereof. It could be a ring. The electron-withdrawing group is a ring group represented by Ar ³ (a substituted or unsubstituted C6 to C30 hydrocarbon ring group having at least one functional group selected from C=O, C=S, C=Se and C=Te, C= It may be a substituted or unsubstituted C2 to C30 heterocyclic group or a fused ring thereof) having at least one functional group selected from O, C=S, C=Se, and C=Te. Therefore, the structure of Formula 1 has a donor-acceptor structure, whereby the absorption wavelength is within a predetermined range of the green wavelength region (about 530 nm to about 555 nm, for example, about 530 nm to about 550 nm, about 530 nm). It can be adjusted to about 545 nm or less or about 530 nm to about 540 nm), the deposition temperature can be lowered, and the absorption coefficient can be increased. If an electron-withdrawing group represented by Ar ³ is included as a substituent for Ar ¹ and Ar ² , the sublimation temperature may be too high and deposition stability and processability may be reduced.

In Formula 1, the ring structure may be a substituted or unsubstituted C5 to C30 hydrocarbon ring group or a substituted or unsubstituted C2 to C30 heterocyclic group.

The substituted or unsubstituted C5 to C30 hydrocarbon ring group is, for example, a substituted or unsubstituted C5 to C30 cycloalkyl group (e.g., a substituted or unsubstituted C5 to C20 cycloalkyl group or a substituted or unsubstituted C5 to C10 cycloalkyl group). ; or at least one substituted or unsubstituted C5 to C30 cycloalkyl group (e.g., a substituted or unsubstituted C5 to C20 cycloalkyl group or a substituted or unsubstituted C5 to C10 cycloalkyl group) and at least one substituted or unsubstituted C6 to C10 cycloalkyl group. It may be a fused ring of a C30 aryl group (eg, a substituted or unsubstituted C6 to C20 aryl group or a substituted or unsubstituted C6 to C10 aryl group). Examples of the fused ring include a fluorenyl group, an indanyl group, etc.

The substituted or unsubstituted C2 to C30 heterocyclic group is, for example, a substituted or unsubstituted C2 to C30 heterocycloalkyl group (e.g., a substituted or unsubstituted C2 to C20 heterocycloalkyl group or a substituted or unsubstituted C2 to C10 heterocycloalkyl group). It may be a cycloalkyl group). In addition, the substituted or unsubstituted C2 to C30 heterocyclic group may mean that the fused ring exemplified by the substituted or unsubstituted C5 to C30 hydrocarbon ring group includes at least one hetero atom. For example, at least one substituted or unsubstituted C5 to C30 heterocycloalkyl group (e.g., a substituted or unsubstituted C5 to C20 heterocycloalkyl group or a substituted or unsubstituted C5 to C10 heterocycloalkyl group) and at least one substituted or A fused ring of an unsubstituted C6 to C30 aryl group (eg, a substituted or unsubstituted C6 to C20 aryl group or a substituted or unsubstituted C6 to C10 aryl group); At least one substituted or unsubstituted C5 to C30 cycloalkyl group (e.g., a substituted or unsubstituted C5 to C20 cycloalkyl group or a substituted or unsubstituted C5 to C10 cycloalkyl group) and at least one substituted or unsubstituted C3 to C30 cycloalkyl group. A fused ring of a heteroaryl group (eg, a substituted or unsubstituted C3 to C20 heteroaryl group or a substituted or unsubstituted C3 to C10 heteroaryl group); At least one substituted or unsubstituted C2 to C30 heterocycloalkyl group (e.g., a substituted or unsubstituted C2 to C20 heterocycloalkyl group or a substituted or unsubstituted C2 to C10 heterocycloalkyl group) and at least one substituted or unsubstituted group It may be a fused ring of a C3 to C30 heteroaryl group (eg, a substituted or unsubstituted C3 to C20 heteroaryl group or a substituted or unsubstituted C3 to C10 heteroaryl group).

In Formula 1, the ring structure (G in Formula 1 is -SiR ^cc R ^dd -, -GeR ^ee R ^ff -, -(CR ^gg R ^hh )-, or -(C(R ⁱⁱ ))=(C(R In the case of ^jj )), the ring structure formed by connecting each pair of R ^cc and R ^dd , R ^ee and R ^ff , R ^gg and R ^hh , or R ⁱⁱ and R ^jj ) is a moiety represented by the following formula (3) It can be included.

[Formula 3]

In Formula 3 above,

Ar ³³ and Ar ³⁴ are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a condensed ring thereof,

* means the point connected to Chemical Formula 1.

In Formula 1, the ring structure (G in Formula 1 is -SiR ^cc R ^dd -, -GeR ^ee R ^ff -, -(CR ^gg R ^hh )-, or -(C(R ⁱⁱ ))=(C(R In the case of ^jj )), the ring structure formed by connecting each pair of R ^cc and R ^dd , R ^ee and R ^ff , R ^gg and R ^hh , or R ⁱⁱ and R ^jj ) is a moiety represented by the following formula (4) It can be included.

[Formula 4]

In Formula 4 above,

X ^a and X ^b are each independently -O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -SiR ^bb R ^cc -, -GeR ^d R ^e - or -GeR ^dd R ^ee -, where R ^a1 , R ^a2 , R ^b , R ^c , R ^d and R ^e are each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C6 to C20 aryloxy group or substituted or unsubstituted C3 to C20 heteroaryl group, and at least one pair of R ^bb and R ^cc or R ^dd and R ^ee may be connected to each other to form a ring structure),

L ^a is -O-, -S-, -Se-, -Te-, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -GeR ^d R ^e -, -(CR ^f R ^g ) _n1 -, -(C(R ^p )=N))- and single bonds selected from R ^a1 , R ^a2 , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , and R ^p is each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, or substituted or unsubstituted is a C6 to C20 aryloxy group and n1 of -(CR ^f R ^g ) _n1 - is 1 or 2),

Hydrogen of each ring is optionally deuterium, halogen, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, and substituted or unsubstituted C6 may be replaced with at least one substituent selected from a C20 aryloxy group,

* is the point connected to Chemical Formula 1.

In Formula 4, CH present in the aromatic ring of moiety (3), (4), (5), (6), (7), (8) or (9) may be replaced with N.

In Formula 1, Ar ³ may be a cyclic group represented by Formula 5 below.

[Formula 5]

In Formula 5 above,

Ar ³ ' is selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group,

Z ¹ and Z ² is each independently selected from O, S, Se, Te, and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or It is a cyano-containing group,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

In Formula 1, Ar ³ may be a cyclic group represented by any one of the following Formulas 6A to 6G.

[Formula 6A]

In Formula 6A,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (wherein R ^c is selected from hydrogen, deuterium and substituted or unsubstituted C1 to C10 alkyl groups),

R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are the same or different and are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted selected from a ringed C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or R ¹² and R ¹³ and R ¹⁴ and R ¹⁵ each exist independently or are connected to each other Can form fused aromatic rings,

n is 0 or 1,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6A and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6B]

In Formula 6B,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from O, S, Se, Te and C(R ^a )(CN), where R ^a is selected from hydrogen, cyano group (-CN) and C1 to C10 alkyl group,

R ¹¹ and R ¹² are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C1 to C30 aryl group. C4 to C30 selected from heteroaryl group, halogen, cyano group (-CN), and combinations thereof,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6B and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6C]

In Formula 6C,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), and combinations thereof,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6C and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6D]

In Formula 6D,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),

G ¹ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof, and R ¹² and R ¹³ exist independently or are connected to each other to form a fused aromatic ring. You can do it,

n is 0 or 1,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6D and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6E]

In Formula 6E,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),

G ² is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof,

n is 0 or 1,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6E and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6F]

In Formula 6F,

Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

R ¹¹ is hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyanogroup. selected from furnace-containing groups and combinations thereof,

G ³ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,

* is the point connected to Chemical Formula 1.

In one embodiment, Z ¹ of Formula 6F and If Z ² is both CR ^a R ^b then Z ¹ and At least one of Z ² may include a cyano group or a cyano-containing group.

[Formula 6G]

In the above formula 6G,

R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group,

Z ¹ to Z ⁴ are each independently selected from O, S, Se, Te and CR ^c R ^d , where R ^c and R ^d are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,

* is the point connected to Chemical Formula 1.

In one embodiment, when Z ¹ to Z ⁴ in Formula 6G are all CR ^c R ^d , at least one of Z ¹ to Z ⁴ may include a cyano group or a cyano-containing group.

The cyclic group represented by Formula 6A may be a cyclic group represented by Formula 6A-1 or Formula 6A-2 below.

[Formula 6A-1]

[Formula 6A-2]

In Formula 6A-1 and Formula 6A-2,

Z ³ , R ¹¹ , n, R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are as in Formula 6A,

* is the point connected to Chemical Formula 1.

The cyclic group represented by the formula 6A may be a cyclic group represented by the following formula 6A-3 when R ¹² and R ¹³ and/or R ¹⁴ and R ¹⁵ are each independently linked to form a fused aromatic ring.

[Formula 6A-3]

In Formula 6A-3,

Z ¹ , Z ² , Z ³ , R ¹¹ and n are as in Formula 6A,

R ^12a and R ^12b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, halogen, or a cyano group. (-CN), cyano-containing groups, and combinations thereof,

m1 and m2 are each independently integers from 0 to 4,

Ph1 and Ph2 refer to fused phenylene rings, and one of Ph1 and Ph2 may be optionally omitted,

* is the point connected to Chemical Formula 1.

The cyclic group represented by Formula 6B may be, for example, a cyclic group represented by Formula 6B-1, Formula 6B-2, or Formula 6B-3 below.

[Formula 6B-1] [Formula 6B-2] [Formula 6B-3]

In the above formulas 6B-1, 6B-2 and 6B-3,

R ¹¹ and R ¹² are as in Formula 6B,

* is the point connected to Chemical Formula 1.

The cyclic group represented by Formula 6C may be, for example, a cyclic group represented by Formula 6C-1 or Formula 6C-3 below.

[Formula 6C-1] [Formula 6C-2]

In the above formulas 6C-1 and 6C-2,

R ¹¹ to R ¹³ are the same as in Formula 6C,

* is the point connected to Chemical Formula 1.

Specific examples of the compound of Formula 1 include compounds of Group 1 below, but are not limited thereto.

[Group 1]

In group 1 above,

Hydrogen present in each ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C4 to C30 heteroaryl group. It may be substituted with a substituent selected from groups, halogens (F, Cl, Br, I), cyano groups (-CN), cyano-containing groups, and combinations thereof.

In group 1, only compounds where G is -C(CH ₃ ) ₂ - are exemplified, but -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -N=, -NR ^a -, -BR ^b -, -SiR ^c R ^d -, -SiR ^cc R ^dd -, -GeR ^e R ^f -, -GeR ^ee R ^ff -, -(CR ^g R ^h ) _n1 -, -(CR ^gg Compounds of R ^hh )-, -(C(R ⁱ )=(C(R ^j ))- or -(C(R ⁱⁱ )=(C(R ^jj ))- can also be exemplified in the same manner.

In addition, in Group 1, only compounds where Ar ³ is a cyclic group represented by Formula 6A, Formula 6B, Formula 6D or Formula 6E are exemplified, but compounds where Ar ³ is a cyclic group represented by Formula 6C, Formula 6F or Formula 6G are also exemplified in the same manner. It can be.

The compound represented by Formula 1 is a compound that selectively absorbs light in the green wavelength region, and in a thin film state, it has a wavelength of about 530 nm to about 555 nm, for example, about 530 nm to about 550 nm, and about 530 nm to about 545 nm. It may have a maximum absorption wavelength (λ _max ) in a wavelength range of nm or less or between about 530 nm and about 540 nm.

The compound represented by Formula 1 has a full width at half of about 50 nm to about 150 nm, for example, about 50 nm to about 120 nm, about 50 nm to about 110 nm, or about 50 nm to about 100 nm in the thin film state. An absorption curve with maximum (FWHM) can be displayed. By having a half width in the above range, selectivity for the entire green wavelength range can be increased. The thin film may be a thin film deposited under vacuum conditions.

In one embodiment, the sublimation temperature (temperature for forming a film by vacuum deposition, also referred to as “deposition temperature”) of the compound represented by Formula 1 may be about 280°C or less, for example, about 100°C to about 280°C. By having a sublimation temperature in the above range, there is little possibility of impurities being mixed in when forming a thin film by deposition. The sublimation temperature can be confirmed by thermogravimetric analysis (TGA), and may be a temperature at which, for example, a weight loss of 10% compared to the initial weight occurs when thermogravimetric analysis is performed at a pressure of 10 Pa or less.

Additionally, when manufacturing an image sensor, it is necessary to form a microlens array (MLA) after manufacturing the device to collect light. This microlens array requires relatively high temperatures (about 160°C or higher, e.g., 170°C or higher, 180°C or higher, or 190°C or higher) during formation, and photoelectric devices (e.g., organic photoelectric devices) require such heat treatment. Performance should not deteriorate during the process. Deterioration of photoelectric devices in the MLA heat treatment process is caused by morphology changes rather than chemical decomposition of organic materials. Morphological changes generally begin to occur when the thermal movement of the material begins due to heat treatment, and in the case of a solid molecular structure, such thermal vibration becomes difficult to occur, making it possible to prevent deterioration due to heat treatment. The compound represented by Formula 1 has a ring structure connected to G at the donor site, thereby suppressing molecular vibration due to heat and maintaining stability during the MLA heat treatment process, thereby ensuring process stability.

The compound represented by Formula 1 may be a p-type semiconductor. The HOMO energy level of the compound may be in the range of about 4.5 eV to about 6.5 eV and may have an energy band gap of about 2.0 eV or more, for example, about 2.0 eV to about 3.0 eV. In this case, the LUMO energy level is located between about 2.5 eV and about 4.5 eV. By controlling the HOMO and LUMO energy levels of the compound used together with the compound of Formula 1, the compound of Formula 1 can be used as a p-type semiconductor.

Examples of n-type semiconductors that can be used with the compound represented by Formula 1 include fullerene, fullerene derivatives, subphthalocyanine or subphthalocyanine derivatives, thiophene or thiophene derivatives, or compounds represented by Formula 7 below.

Includes a p-type semiconductor containing a compound represented by Formula 1 and an n-type semiconductor containing a fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or thiophene derivative, or a compound represented by Formula 7 below. The composition has excellent absorption in the entire green wavelength range and can improve the photoelectric conversion efficiency of photoelectric devices and light absorption sensors containing it and greatly reduce dark current and residual charge.

The compound represented by Formula 7 below may include a planar core having an imide group or an anhydride group.

[Formula 7]

In Formula 7 above,

^{X 5 and _} C3 to C30 heterocyclic group, halogen, or cyano group),

R ⁸¹ to R ⁸⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, or cyano group. or a combination thereof.

Examples of the fullerene include C60, C70, C76, C78, C80, C82, C84, C90, C96, C240, C540, mixtures thereof, fullerene nanotubes, etc. The fullerene derivative refers to a compound having a substituent on the fullerene. The fullerene derivative may include a substituent such as an alkyl group (for example, a C1 to C30 alkyl group), an aryl group (for example, a C6 to C30 aryl group), or a heterocyclic group (for example, a C3 to C30 cycloalkyl group). Examples of the aryl group and heterocyclic group include benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, fluorene ring, triphenylene ring, naphthacene ring, biphenyl ring, pyrrole ring, furan ring, and thiophene. Ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran (isobenzofuran) ring, benzimidazole ring, imidazopyridine ring, quinolizidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, Quinoxazoline ring, isoquinoline ring, carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, thiathrene ( There is a thianthrene ring, a chromene ring, a xanthene ring, a phenoxazine ring, a phenoxathiin ring, a phenothiazine ring, or a phenazine ring.

The subphthalocyanine or subphthalocyanine derivative may be represented by the following formula (8).

[Formula 8]

In Formula 8 above,

R ³¹ to R ³³ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C1 to C30 aryl group. selected from C3 to C30 heteroaryl groups, halogens, halogen-containing groups, and combinations thereof,

a, b and c are integers from 1 to 3,

Z is a monovalent substituent.

As an example, Z may be a halogen or a halogen-containing group, for example, F, Cl, a F-containing group, or a Cl-containing group.

The halogen may mean F, Cl, Br, or I, and the halogen-containing group may mean that at least one hydrogen of an alkyl group (C1 to C30 alkyl group) is replaced with F, Cl, Br, or I.

The thiophene derivative may be represented, for example, by the following Chemical Formula 9 or Chemical Formula 10, but is not limited thereto.

[Formula 9]

[Formula 10]

In Formulas 9 and 10,

T ¹ , T ² and T ³ are aromatic rings having a substituted or unsubstituted thiophene moiety,

T ¹ , T ² and T ³ may each exist independently or be fused,

X ^{3 to} C3 to C30 heterocyclic group, cyano group, or a combination thereof,

EWG ¹ and EWG ² may each independently be an electron withdrawing group.

For example, in Formula 9, at least one of X ³ to X ⁸ may be an electron-withdrawing group, for example, a cyano group or a cyano-containing group.

For example, specific examples of the compound represented by Formula 7 include compounds represented by the following Formula 7A or 7B.

[Formula 7A] [Formula 7B]

In Formula 7A and Formula 7B,

R ⁸¹ to R ⁸⁴ , R ^a1 and R ^a2 are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heterocycle. It may be a group, halogen, cyano group, or a combination thereof.

For example, at least one of R ^a1 and R ^a2 may include an electron withdrawing group. For example, R ^a1 and R ^a2 may each include an electron withdrawing group.

For example, at least one of R ^a1 and R ^a2 is halogen; Cyano group; Halogen substituted C1 to C30 alkyl group; Halogen substituted C6 to C30 aryl group; Halogen substituted C3 to C30 heterocyclic group; Cyano substituted C1 to C30 alkyl group; Cyano substituted C6 to C30 aryl group; Cyano substituted C3 to C30 heterocyclic group; Substituted or unsubstituted pyridinyl group; Substituted or unsubstituted pyrimidinyl group; Substituted or unsubstituted triazinyl group; Substituted or unsubstituted pyrazinyl group; Substituted or unsubstituted quinolinyl group; Substituted or unsubstituted isoquinolinyl group; Substituted or unsubstituted quinazolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; Or it may include a combination thereof.

For example, R ^a1 and R ^a2 are each halogen; Cyano group; Halogen substituted C1 to C30 alkyl group; Halogen substituted C6 to C30 aryl group; Halogen substituted C3 to C30 heterocyclic group; Cyano substituted C1 to C30 alkyl group; Cyano substituted C6 to C30 aryl group; Cyano substituted C3 to C30 heterocyclic group; Substituted or unsubstituted pyridinyl group; Substituted or unsubstituted pyrimidinyl group; Substituted or unsubstituted triazinyl group; Substituted or unsubstituted pyrazinyl group; Substituted or unsubstituted quinolinyl group; Substituted or unsubstituted isoquinolinyl group; Substituted or unsubstituted quinazolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; Or it may include a combination thereof.

For example, R ^a1 and R ^a2 may be the same or different from each other, for example, they may be the same.

The compound represented by Formula 7 may be selected from, for example, the compounds listed in Group 2 below, but is not limited thereto.

[Group 2]

In group 2 above,

Hydrogen present in each aromatic ring or heteroaromatic ring is deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C3 to C30 heterocyclic group, halogen, It may be substituted with a substituent selected from a cyano group or a combination thereof.

Hereinafter, a photoelectric device according to an embodiment including the above compound will be described with reference to the drawings.

Figure 1 is a cross-sectional view showing a photoelectric device according to one implementation.

Referring to FIG. 1, the photoelectric device 100 according to one embodiment includes a first electrode 10 and a second electrode 20 facing each other, and between the first electrode 10 and the second electrode 20. It includes an active layer 30 located thereon.

One of the first electrode 10 and the second electrode 20 is an anode and the other is a cathode. At least one of the first electrode 10 and the second electrode 20 may be a light transmitting electrode, and the light transmitting electrode may be made of, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). It can be made of the same transparent conductor, or a thin single-layer or multi-layer metal thin film. If one of the first electrode 10 and the second electrode 20 is a non-transmissive electrode, it may be made of an opaque conductor such as aluminum (Al).

The active layer (30, hereinafter also referred to as “light absorption layer”) is a layer containing a p-type semiconductor and an n-type semiconductor, which receives light from the outside to generate excitons and then separates the generated excitons into holes and electrons. It's a layer.

The active layer 30 may include a compound represented by Chemical Formula 1.

As described above, the p-type semiconductor includes a compound represented by Formula 1, and the n-type semiconductor includes fullerene, a fullerene derivative, subphthalocyanine or a subphthalocyanine derivative, thiophene or a thiophene derivative, or a compound represented by Formula 7. It may contain compounds. The description of these is the same as described above. When used in this combination, the external quantum efficiency and residual charge characteristics of the photoelectric device can be greatly improved.

The active layer 30 has a maximum absorption wavelength in a wavelength range of about 530 nm to about 555 nm, for example, about 530 nm to about 550 nm, about 530 nm to about 545 nm, or about 530 nm to about 540 nm. It can have (λ _max ).

The active layer 30 has an absorption curve with a relatively small full width at half maximum (FWHM) of about 50 nm to about 150 nm, such as about 50 nm to about 120 nm, about 50 nm to about 110 nm, or about 50 nm to about 100 nm. can indicate. Accordingly, the active layer 30 can have high selectivity for light in the green wavelength range.

The active layer 30 may include a double layer (bi-layer) including a p-type layer including the aforementioned p-type semiconductor and an n-type layer including the aforementioned n-type semiconductor. At this time, the thickness ratio of the p-type layer and the n-type layer may be about 1:9 to 9:1, and within the above range, for example, about 2:8 to 8:2, about 3:7 to 7:3, and about 4:6 to about 4:6. It could be 6:4 or about 5:5.

The active layer 30 may be an intrinsic layer (I layer) in which a p-type semiconductor and an n-type semiconductor are mixed in a bulk heterojunction form. At this time, the p-type semiconductor and the n-type semiconductor can be mixed at a volume ratio (thickness ratio) of about 1:9 to 9:1, and within the above range, for example, they can be mixed at a volume ratio (thickness ratio) of about 2:8 to 8:2. Within the above range, it can be mixed at a volume ratio (thickness ratio) of, for example, about 3:7 to 7:3, and within the above range, it can be mixed at a volume ratio (thickness ratio) of, for example, about 4:6 to 6:4, Within the above range, for example, they can be mixed at a volume ratio (thickness ratio) of about 5:5. Having a composition ratio in the above range is advantageous for effective exciton generation and pn junction formation.

The active layer 30 may further include a p-type layer and/or an n-type layer in addition to the intrinsic layer. The p-type layer may include the p-type semiconductor described above, and the n-type layer may include the n-type semiconductor described above. The active layer 30 is, for example, an intrinsic layer (I layer), a p-type layer/I layer, an I layer/n-type layer, a p-type layer/I layer/n-type layer, and a p-type layer/n-type layer. It can be a combination.

The active layer 30 may have a thickness of about 1 nm to about 500 nm. Within the above range, it may have a thickness of about 5 nm to 300 nm. By having a thickness within the above range, photoelectric conversion efficiency can be effectively improved by effectively absorbing light and effectively separating and transferring holes and electrons. The optimal film thickness of the active layer 30 can be determined, for example, by considering the absorption coefficient of the active layer 30, and can absorb, for example, at least about 70% or more, for example, about 80% or more, for example, about 90% of the light. It can have thickness.

When light is incident on the photoelectric device 100 from the first electrode 10 and/or the second electrode 20 and the active layer 30 absorbs light in a predetermined wavelength region, excitons may be generated inside the photoelectric device 100. Exciton is separated into holes and electrons in the active layer 30, the separated holes move to the anode side, which is one of the first electrode 10 and the second electrode 20, and the separated electrons move to the first electrode 10 and the second electrode 20. It moves to the other one of the two electrodes 20, the cathode, allowing current to flow to the photoelectric device.

Hereinafter, a photoelectric device according to another embodiment will be described with reference to FIG. 2.

Figure 2 is a cross-sectional view showing a photoelectric device according to another embodiment.

Referring to FIG. 2, the photoelectric device 100 according to this embodiment has a first electrode 10 and a second electrode 20 facing each other, and a first electrode 10 and a second electrode, similar to the above-described embodiment. It includes an active layer 30 located between the electrodes 20.

However, unlike the above-described embodiment, the photoelectric device 100 according to the present embodiment has a charge auxiliary layer 40 between the first electrode 10 and the active layer 30 and between the second electrode 20 and the active layer 30, respectively. , 45) are further included. The charge auxiliary layers 40 and 45 can increase efficiency by facilitating the movement of holes and electrons separated from the active layer 30.

The charge auxiliary layers 40 and 45 include a hole injection layer (HIL) that facilitates the injection of holes, a hole transport layer (HTL) that facilitates the transport of holes, and a hole transport layer (HTL) that prevents the movement of electrons. Electron blocking layer (EBL), electron injecting layer (EIL) that facilitates electron injection, electron transport layer (ETL) that facilitates electron transport, and hole movement. It may include at least one selected from a hole blocking layer (HBL) that blocks.

The charge auxiliary layers 40 and 45 may include, for example, organic materials, inorganic materials, or organic-inorganic materials. The organic material may be an organic compound having hole or electronic properties, and the inorganic material may be a metal oxide such as molybdenum oxide, tungsten oxide, or nickel oxide.

The hole injection layer (HIL) and/or the hole transport layer (HTL) may be, for example, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS), polyarylamine, poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetrakis (4- Methoxyphenyl)-benzidine (N,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine, TPD), 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino ]Biphenyl (4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl, α-NPD), m-MTDATA, 4,4'4"-tris(N-carbazolyl) -It may include one selected from triphenylamine (4,4',4"-tris(N-carbazolyl)-triphenylamine, TCTA) and combinations thereof, but is not limited thereto.

The electron blocking layer (EBL) is, for example, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), PEDOT:PSS, polyarylamine , poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine (N ,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine, TPD), 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (4,4' -bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl, α-NPD), m-MTDATA, 4,4',4"-tris(N-carbazolyl)-triphenylamine (4, It may include one selected from 4',4"-tris(N-carbazolyl)-triphenylamine, TCTA) and combinations thereof, but is not limited thereto.

The electron injection layer (EIL) and/or electron transport layer (ETL) is, for example, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA). , bathocuproine (BCP), LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, and combinations thereof, but is not limited thereto.

The hole blocking layer (HBL) is, for example, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), basocuproine (BCP). , LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, and combinations thereof, but is not limited thereto.

One of the charge auxiliary layers 40 and 45 may be omitted.

The photoelectric devices 100 and 200 may be applied to solar cells, light absorption sensors (eg, image sensors), light detectors, light sensors, and light emitting devices, but are not limited thereto.

Hereinafter, an example of an image sensor using the photoelectric device will be described with reference to the drawings. Here, an organic CMOS image sensor is described as an example of an image sensor.

FIG. 3 is a plan view schematically showing an organic CMOS image sensor according to an embodiment, and FIG. 4 is a cross-sectional view of the organic CMOS image sensor of FIG. 3 .

Referring to FIGS. 3 and 4, the organic CMOS image sensor 300 according to one embodiment includes a semiconductor substrate on which light sensing elements 50B and 50R, a transfer transistor (not shown), and a charge storage 55 are integrated. (110), a lower insulating layer 60, a color filter layer 70, an upper insulating layer 80, and a photoelectric element 100.

The semiconductor substrate 110 may be a silicon substrate, and photo-sensing elements 50B and 50R, a transfer transistor (not shown), and a charge storage 55 are integrated. The photo-sensing elements 50R and 50B may be photodiodes.

The photo-sensing elements 50B and 50R, the transfer transistor and/or the charge storage 55 may be integrated for each pixel, for example, the photo-sensing elements 50B and 50R are located on the outermost side of the semiconductor substrate 110. It may be integrated into the semiconductor substrate 110 or surrounded within the semiconductor substrate 110 so as to be located within a volumetric space defined by the surface and at least partially exposed by the semiconductor substrate 110 . For example, as shown in the drawing, the photo-sensing elements 50B and 50R may be included in the blue pixel and the red pixel, and the charge storage 55 may be included in the green pixel. The blue light sensing element 50B may be configured to detect (e.g., selectively detect, selectively absorb, and photoelectrically convert) blue light, which is light in the blue wavelength region, and the red light sensing element 50R. May be configured to detect (e.g., include selectively absorbing and photoelectrically converting) red light, which is light in the red wavelength region. The light sensing elements 50B and 50R may sense light (e.g., selectively sense). ) and the information sensed by the photo-sensing elements 50B and 50R can be transmitted by a transfer transistor, the charge storage 55 is electrically connected to the photoelectric element 100, and the information in the charge storage 55 is It can be transmitted by a transfer transistor.

In the drawing, a structure in which the photo-sensing elements 50B and 50R are arranged side by side is exemplarily shown, but the present invention is not limited to this and the blue photo-sensing element 50B and the red photo-sensing element 50R may be vertically stacked.

Metal wiring (not shown) and a pad (not shown) are also formed on the semiconductor substrate 110. Metal wires and pads may be made of metals with low resistivity, such as aluminum (Al), copper (Cu), silver (g), and alloys thereof, in order to reduce signal delay, but are not limited thereto. However, it is not limited to the above structure, and metal wires and pads may be located below the photo-sensing elements 50B and 50R.

A lower insulating layer 60 is formed on the metal wiring and pad. The lower insulating layer 60 may be made of an inorganic insulating material such as silicon oxide and/or silicon nitride or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO and SiOF. Lower insulating layer 60 has a trench exposing charge storage 55 . The trench may be filled with filler material.

A color filter layer 70 is formed on the lower insulating film 60. The color filter layer 70 includes a blue filter 70B formed in a blue pixel to selectively transmit blue light and a red filter 70R formed in a red pixel to selectively transmit red light. In one implementation, a cyan filter and a yellow filter may be disposed instead of the blue filter 70B and the red filter 70R. In this implementation, an example without a green filter is described, but in some cases, a green filter may be provided.

The color filter layer 70 may be omitted in some cases. For example, in a structure in which the blue light sensing device 50B and the red light sensing device 50R are vertically stacked, the blue light sensing device 50B and the red light sensing device 50R are vertically stacked. Since the sensing element 50R can selectively absorb and/or sense light in each wavelength region depending on the stacking depth, the color filter layer 70 may not be provided.

An upper insulating layer 80 is formed on the color filter layer 70. The upper insulating layer 80 removes the level difference caused by the color filter layer 70 and flattens it. The upper insulating layer 80 and lower insulating layer 60 have a contact hole (not shown) exposing the pad and a through hole 85 exposing the charge storage 55 of the green pixel.

The above-described photoelectric device 100 is formed on the upper insulating layer 80. As described above, the photoelectric device 100 includes a first electrode 10, an active layer 30, and a second electrode 20.

Both the first electrode 10 and the second electrode 20 may be transparent electrodes, and the active layer 30 is as described above. The active layer 30 can selectively absorb and/or sense light in the green wavelength region and can replace the color filter of the green pixel.

The light incident from the second electrode 20 can be converted into photoelectricity by mainly absorbing the light in the green wavelength range in the active layer 30, and the light in the remaining wavelength range passes through the first electrode 10 to the photo-sensing element ( 50B, 50R).

As described above, by having a structure in which photoelectric elements that selectively absorb and/or detect light in the green wavelength region are stacked, the size of the image sensor can be reduced and a miniaturized image sensor can be implemented.

In addition, as described above, by including the compound represented by Formula 1 as a semiconductor, agglomeration between compounds can be prevented even in a thin film state, and light absorption characteristics depending on the wavelength can be maintained. Accordingly, green wavelength selectivity can be maintained, and crosstalk caused by unnecessary absorption of light in wavelength regions other than green can be reduced and sensitivity can be increased.

In one implementation, an additional color filter may be further disposed above the photovoltaic device 100 in FIG. 4 . The additional color filters may include a blue filter 70B and a red filter 70R or a cyan filter and a yellow filter.

An organic CMOS image sensor in which the color filter is disposed on a photoelectric element is shown in FIG. 5. Figure 5 is a cross-sectional view showing an organic CMOS image sensor 400 according to one implementation. Referring to FIG. 5, the organic CMOS image sensor 400 has the same structure as FIG. 4 except that the color filter layer 72 including the blue filter 72B and the red filter 72R is located on the photoelectric device 100. has Instead of the blue filter 72B and the red filter 72R, a cyan filter and a yellow filter may be disposed, respectively.

4 and 5 illustrate an example including the photoelectric device 100 of FIG. 1, but the present invention is not limited to this and can be equally applied to the case including the photoelectric device 200 of FIG. 2. FIG. 6 is a cross-sectional view showing an organic CMOS image sensor 500 to which the photoelectric device 200 of FIG. 2 is applied.

Referring to FIG. 6, as in the implementation shown in FIG. 4, the organic CMOS image sensor 500 is a semiconductor in which light sensing elements 50B and 50R, a transfer transistor (not shown), and a charge storage 55 are integrated. It includes a substrate 110, a lower insulating layer 60, and an upper insulating layer 80.

However, the organic CMOS image sensor 500 shown in FIG. 6 includes a photoelectric device 200, unlike FIG. 4 which includes a photoelectric device 100.

Figure 7 is a cross-sectional view schematically showing an organic CMOS image sensor according to another embodiment.

Referring to FIG. 7, the organic CMOS image sensor 600 according to this embodiment includes photo-sensing elements 50B and 50R, a transfer transistor (not shown), and a charge storage ( It includes a semiconductor substrate 310 on which 55) is integrated, an insulating layer 80, and a photoelectric device 100.

However, in the organic CMOS image sensor 600 according to the present embodiment, unlike the above-described embodiment shown in FIG. 5, the blue light sensing element 50B and the red light sensing element 50R in the semiconductor substrate 110 are aligned in a vertical direction. They are stacked in a direction perpendicular to the direction in which the upper surface of the semiconductor substrate 110 extends, as shown in FIG. 7, and the color filter layer 70 or the lower insulating layer 60 may be omitted. . The blue light sensing element 50B and the red light sensing element 50R are electrically connected to the charge storage and may be transferred by a transfer transistor (not shown). The blue light sensing element 50B and the red light sensing element 50R may selectively absorb and/or sense light in each wavelength region depending on the stacking depth.

As described above, by having a structure in which photoelectric elements that selectively absorb and/or detect light in the green wavelength range are stacked, and a red light-sensing element and a blue light-sensing element are stacked, the size of the image sensor is further reduced and the image sensor is miniaturized. Sensors can be implemented. In addition, as described above, the photoelectric device 100 can increase the green wavelength selectivity, thereby reducing crosstalk caused by unnecessary absorption of light in wavelength ranges other than green and increasing sensitivity.

Although FIG. 7 illustrates an example including the photoelectric device 100 of FIG. 1, the present invention is not limited to this and can be equally applied to the case including the photoelectric device 200 of FIG. 2.

FIG. 8A is a schematic diagram schematically showing an organic CMOS image sensor according to another embodiment, and FIG. 8B is a cross-sectional view of the organic CMOS image sensor shown in FIG. 8A.

Referring to FIGS. 8A and 8B, the organic CMOS image sensor 700 according to the present embodiment includes a green photoelectric element (G) that selectively absorbs and/or detects light in the green wavelength region, and selectively detects light in the blue wavelength region. It is a structure in which a blue photoelectric element (B) that absorbs and/or senses light and a red photoelectric element (R) that selectively absorbs and/or senses light in the red wavelength range are stacked. For example, the organic CMOS image sensor 700 may include a green photoelectric element that selectively detects light in the green wavelength region, a blue photoelectric element that selectively detects light in the blue wavelength region, and a red photoelectric element that selectively detects light in the blue wavelength region. You can. The red photoelectric element, the blue photoelectric element, and the red photoelectric element are stacked at least as shown in FIG. 8A. As shown, the photoelectric elements 100a to 100c are stacked in a vertical direction on the semiconductor substrate 110 so that the photoelectric elements 100a to 100c are at least in a vertical direction perpendicular to the upper surface 110S of the semiconductor substrate 110. They may partially overlap, but are not limited to this.

The organic CMOS image sensor 700 according to the above embodiment includes a semiconductor substrate 110, a lower insulating layer 60, a middle insulating layer 65, an upper insulating layer 80, and a first device (i.e., a photoelectric device, hereinafter). same) (100a), a second element (100b), and a third element (100c).

The semiconductor substrate 110 may be a silicon substrate, and a transfer transistor (not shown) and charge storage 155a, 155b, and 155c are integrated.

A metal wire (not shown) and a pad (not shown) are formed on the semiconductor substrate 110, and a lower insulating layer 60 is formed on the metal wire and the pad.

The first element 100a, the second element 100b, and the third element 100c are sequentially formed on the lower insulating film 60.

One of the first, second, and third devices 100a, 100b, and 100c may be the photoelectric device 100 or 200 of FIG. 1 (a green photoelectric device according to one embodiment). As shown in Figure 1 or Figure 2, the remaining two (red photoelectric element and blue photoelectric element) may have the same structure as the photoelectric elements 100 and 200, but the active layer 30 therein is red or blue. Light in the wavelength range can be selectively absorbed and converted into photoelectricity. A detailed description of the photoelectric devices 100 and 200 is the same as described above. The first electrode 10 and the second electrode 20 of the photoelectric devices 100 and 200, the red photoelectric device, and the blue photoelectric device may be connected to charge storage units 155a, 155b, and 155c.

The active layer 30 of the first device 100a can selectively absorb light in any one of red, blue, or green wavelength regions and perform photoelectric conversion. For example, the first element 100a may be a red photoelectric conversion element that selectively senses light in the red wavelength range. The first electrode 10 and the second electrode 20 of the first element 100a may be electrically connected to the first charge storage 155a. “Photoelectric conversion element” may be used interchangeably with “photoelectric element” in this specification.

An intermediate insulating layer 65 may be formed on the first device 100a, and a second device 100b may be formed on the intermediate insulating layer 65.

The active layer 30 of the second device 100b can selectively absorb light in any one of red, blue, or green wavelength regions and perform photoelectric conversion. For example, the second element 100b may be a green photoelectric conversion element that selectively senses light in a green wavelength region. As another example, the second element 100b may be a blue photoelectric conversion element that selectively senses light in the blue wavelength region. The first electrode 10 and the second electrode 20 of the second element 100b may be electrically connected to the second charge storage 155b.

An upper insulating layer 80 is formed on the second element 100b. The lower insulating layer 60, the middle insulating layer 65, and the upper insulating layer 80 have a plurality of through holes 85a, 85b, and 85c that expose the charge storage units 155a, 155b, and 155c.

The third element 100c is formed on the upper insulating layer 80. The active layer 30 of the third element 100c can selectively absorb light in any one of red, blue, and green wavelength regions and perform photoelectric conversion. For example, the third element 100c may be a blue photoelectric conversion element that selectively senses light in the blue wavelength region. As another example, the third element 100c may be a green photoelectric conversion element that selectively senses light in the green wavelength region. The first electrode 10 and the second electrode 20 of the third element 100c may be electrically connected to the third charge storage 155c.

A condensing lens (not shown) may be further formed in the third element 100c. A condenser lens can control the direction of incident light and focus it on one area. The condenser lens may have, for example, a cylinder or hemisphere shape, but is not limited thereto.

Although FIG. 8B shows a structure in which the first element 100a, the second element 100b, and the third element 100c are sequentially stacked, the stacking order is not limited to this and may be changed in various ways.

As described above, the first element 100a, the second element 100b, and the third element 100c, which absorb light in different wavelength ranges, have a stacked structure, further reducing the size of the image sensor, While realizing miniaturization of the image sensor, sensitivity can be increased and crosstalk can be reduced.

Although FIG. 8A shows a structure in which a red photoelectric device (R), a blue photoelectric device (B), and a green photoelectric device (G) are sequentially stacked, the stacking order is not limited to this and may be varied.

The green photoelectric device (G) may be the photoelectric device 100 or the photoelectric device 200 described above, and the blue photoelectric device (B) may include electrodes facing each other and light in the blue wavelength region interposed between them. It may include an active layer containing an organic material that selectively absorbs, and the red photoelectric device (R) includes electrodes facing each other and an organic material that selectively absorbs light in the red wavelength region interposed between them. It may include an active layer containing.

As described above, a green photoelectric device (G) that selectively absorbs and/or senses light in the green wavelength region, a blue photoelectric device (B) that selectively absorbs and/or senses light in the blue wavelength region, and light in the red wavelength region. By having a structure in which red photoelectric elements (R) that selectively absorb and/or detect are stacked, the size of the image sensor can be further reduced to implement a miniaturized image sensor, while increasing sensitivity and reducing crosstalk.

Hereinafter, a sensor embedded display panel with an image sensor (light absorption sensor) according to an embodiment will be described.

A sensor-embedded display panel according to an embodiment may be a display panel capable of performing a display function and a recognition function (e.g., a biometric recognition function), and may be an in-cell display panel with a built-in sensor that performs a recognition function (e.g., a biometric recognition function). It may be an (in-cell) type display panel.

FIG. 9 is a plan view showing an example of a sensor-embedded display panel according to an implementation, and FIG. 10 is a cross-sectional view showing an example of a sensor-embedded display panel according to an implementation.

Referring to FIGS. 9 and 10 , the sensor-embedded display panel 1000 according to one implementation includes a plurality of sub-pixels (PX) that display different colors. A plurality of subpixels (PX) may display at least three primary colors, for example, a first subpixel (PX1) displaying different first, second, and third colors selected from red, green, and blue. ), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, the first color, second color, and third color may be red, green, and blue, respectively, and the first subpixel (PX1) may be a red subpixel that displays red, and the second subpixel (PX2) may be green. may be a green subpixel that displays, and the third subpixel (PX3) may be a blue subpixel that displays blue. However, it is not limited to this and may further include auxiliary sub-pixels (not shown) such as white sub-pixels.

Displaying a color may mean emitting light corresponding to the color (e.g., light in the wavelength spectrum of the color).

Referring to FIG. 9, the sensor-embedded display panel 1000 is configured to display red (e.g., light in the red wavelength spectrum) and includes a first light-emitting device (e.g., the first light-emitting device 210 shown in FIG. 10). A plurality of first sub-pixels (PX1), configured to display green (e.g., light in a green wavelength spectrum) and including a second light-emitting device (e.g., the second light-emitting device 220 shown in FIG. 10) a plurality of second sub-pixels PX2, and a third light-emitting element (e.g., the third light-emitting element 230 shown in FIG. 10) configured to display blue (e.g., light in the blue wavelength spectrum). It includes a plurality of third sub-pixels (PX3). The first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 are located in or at least partially define the display area DA.

A plurality of subpixels (PX) including the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) form one unit pixel (UP) along the row and/or column. Can be arranged repeatedly. In Figure 9, a structure consisting of one first sub-pixel (PX1), two second sub-pixels (PX2), and one third sub-pixel (PX3) in a unit pixel (UP) is shown as an example, but the structure is limited to this. may include at least one first subpixel (PX1), at least one second subpixel (PX2), and at least one third subpixel (PX3). In the drawing, a Pentile type arrangement is shown as an example, but the arrangement is not limited to this and the arrangement of the sub-pixels (PX) may vary. The area occupied by the plurality of subpixels (PX) and displaying color by the plurality of subpixels (PX) may be a display area (DA) that displays an image. For example, a region of subpixels (PX) (e.g., the xy plane) may collectively define a display area (DA) configured to display an image thereon (e.g., configured to display one or more colors). there is. A part of the area excluding the display area (DA) of the sensor-embedded display panel 1000 (e.g., a part of the area in the xy direction between adjacent sub-pixels (PX) of the sensor-embedded display panel 1000, that is, the xy plane, etc.) may be a Non-Display Area (NDA) that does not display an image thereon.

The first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may each include a light emitting element. As an example, the first sub-pixel (PX1) may include a first light-emitting device 210 capable of emitting light in the wavelength spectrum of the first color, and the second sub-pixel (PX2) may include the first light-emitting device 210 capable of emitting light in the wavelength spectrum of the second color. may include a second light-emitting device 220 capable of emitting light, and the third sub-pixel PX3 may include a third light-emitting device 230 capable of emitting light of a third color wavelength spectrum. You can. However, it is not limited thereto, and at least one of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) is a combination of the first color, the second color, and the third color, that is, a white wavelength spectrum. It may include a light emitting element that emits light and display a first color, a second color, or a third color through a color filter (not shown). Here, the terms “wavelength spectrum” and “wavelength region” may be used interchangeably.

The sensor-embedded display panel 1000 according to one embodiment includes a light absorption sensor 310. The light absorption sensor 310 may be disposed in a non-display area (NDA). The non-display area (NDA) is an area other than the display area (DA), where the first sub-pixel (PX1), the second sub-pixel (PX2), the third sub-pixel (PX3) and optionally the auxiliary sub-pixel are not arranged. It may be an area (for example, the display area (DA) of the total area of the sensor-embedded display panel 1000, excluding the sub-pixels (PX), a portion between adjacent sub-pixels (PX), etc.). For example, a region of subpixels (PX) (e.g., the xy plane) may collectively define a display area (DA) configured to display an image thereon (e.g., configured to display one or more colors). there is. Part of the area (e.g., xy plane) excluding the display area (DA) of the sensor-embedded display panel 1000 (e.g., xy direction, xy plane, etc. of adjacent subpixels (PX) in the area of the sensor-embedded display panel 1000) may be a non-display area (NDA) configured not to display an image thereon (e.g., configured not to display any color). The light absorption sensor 310 is located between at least two subpixels selected from the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) (e.g., among a plurality of first subpixels (PX1)). Between at least two subpixels of the first subpixel (PX1), the second subpixel (PX2) of the plurality of second subpixels (PX2), or the third subpixel (PX3) of the plurality of third subpixels (PX3)) and may be arranged in parallel with the first, second, and third light emitting devices 210, 220, and 230 disposed in the display area DA, for example, of the semiconductor substrate 110. It may be arranged in parallel along the surface direction (eg, xy direction as shown) of the semiconductor substrate 110, which may be a direction extending parallel to the upper surface 110S.

The light absorption sensor 310 may be an optical type recognition sensor (e.g., a biometric sensor), and detects light from at least one of the first, second, and third light emitting elements 210, 220, and 230 disposed in the display area DA. The emitted light absorbs the light reflected by a recognition target 90, such as a living body, tool, or object (e.g., a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or any of these). It can absorb any combination of light and convert it into an electrical signal. Here, the living body may be a finger, fingerprint, palm, iris, face, and/or wrist, but is not limited thereto. The light absorption sensor 310 may be, for example, a fingerprint sensor, an illumination sensor, an iris sensor, a distance sensor, a blood vessel distribution sensor, and/or a heart rate sensor, but is not limited thereto.

The light absorption sensor 310 may be disposed on the same plane as the first, second, and third light emitting elements 210, 220, and 230 on the semiconductor substrate 110, and may be built into the sensor-embedded display panel 1000. You can. In other words, the light absorption sensor 310 may be aligned with the first, second, and third light emitting devices 210, 220, and 230 on the semiconductor substrate 110 along the surface direction of the semiconductor substrate 110. As described herein, the planar direction of the semiconductor substrate 110 is a direction extending parallel to at least a portion of the semiconductor substrate 110 including the upper surface 110S of the semiconductor (e.g., xy as shown). direction).

Referring to FIG. 10, the sensor-embedded display panel 1000 includes a semiconductor substrate 110 (hereinafter also referred to as a substrate); A thin film transistor 120 formed on a semiconductor substrate 110; an insulating layer 140 formed on the thin film transistor 120; a pixel defining layer 150 formed on the insulating layer 140; It includes first, second, or third light emitting devices 210, 220, and 230 and a light absorption sensor 310 located in a space defined by the pixel definition layer 150.

The semiconductor substrate 110 may be a light transmitting substrate, for example, a glass substrate or a polymer substrate. Polymer substrates include, for example, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamidoimide, polyethersulfone, polyorganosiloxane, styrene-ethylene-butylene-styrene copolymer, It may include, but is not limited to, polyurethane, polyacrylic, polyolefin, or a combination thereof.

A plurality of thin film transistors 120 are formed on the semiconductor substrate 110. The thin film transistor 120 may be included in one or more than one subpixel PX, and may include, for example, at least one switching thin film transistor and/or at least one driving thin film transistor. The substrate 110 on which the thin film transistor 120 is formed may be called a thin film transistor substrate (TFT substrate) or a thin film transistor backplane (TFT backplane).

The insulating layer 140 may cover the semiconductor substrate 110 and the thin film transistor 120 and may be formed on the entire surface of the semiconductor substrate 110. The insulating layer 140 may be a planarization film or a passivation film, and may include an organic insulating material, an inorganic insulating material, an organic/inorganic insulating material, or a combination thereof. The insulating layer 140 includes a plurality of contact holes 141 for electrically connecting the first, second, and third light emitting elements 210, 220, and 230 and the thin film transistor 120, the light absorption sensor 310, and the thin film. It may have a plurality of contact holes 142 for electrically connecting the transistor 120. The insulating layer 140 may include an organic, inorganic, or organic-inorganic insulating material, for example, an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, or aluminum oxynitride. ; Organic insulating materials such as polyimide, polyamide, polyamidoimide, and polyacrylate; Alternatively, it may include an organic-inorganic insulating material such as polyorganosiloxane or polyorganosilazane.

A pixel definition layer 150 may also be formed on the front surface of the semiconductor substrate 110 and may be located between adjacent sub-pixels (PX) to partition each sub-pixel (PX). The pixel definition layer 150 may have a plurality of openings 151 located in each sub-pixel (PX), and each opening 151 includes first, second, and third light emitting elements 210, 220, and 230. Any one of the light absorption sensors 310 may be located. The pixel defining layer 150 may be an insulating film that may include an organic, inorganic, or organic-inorganic insulating material. In one embodiment, the pixel defining layer 150 includes an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride; organic insulating materials such as polyimide; Alternatively, it may include an organic-inorganic insulating material such as polyorganosiloxane or polyorganosilazane.

The first, second, and third light emitting elements 210, 220, and 230 are formed on the semiconductor substrate 110 (or thin film transistor substrate) and are repeatedly illuminated along the surface direction (e.g., xy direction) of the semiconductor substrate 110. It is arranged as follows. As described above, the first, second, and third light emitting elements 210, 220, and 230 may be included in the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3), respectively. , the first, second, and third light emitting devices 210, 220, and 230 may be electrically connected to separate thin film transistors 120 and driven independently.

The first, second, and third light emitting elements 210, 220, and 230 may each independently emit one light selected from the red wavelength spectrum, green wavelength spectrum, blue wavelength spectrum, infrared wavelength spectrum, and combinations thereof. . For example, the first light-emitting device 210 may emit light in a red wavelength spectrum, the second light-emitting device 220 may emit light in a green wavelength spectrum, and the third light-emitting device 230 may emit light in a blue wavelength spectrum. can emit light. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may have a maximum emission wavelength (λ _max ) in the range of approximately 600 nm to less than 750 nm, approximately 500 nm to 600 nm, and approximately 400 nm to less than 500 nm, respectively.

The first, second, and third light emitting devices 210, 220, and 230 may be, for example, light emitting diodes, and may be, for example, organic light emitting diodes containing organic materials.

The light absorption sensor 310 is formed on the semiconductor substrate 110 (or thin film transistor substrate) and may be arranged randomly or regularly along the surface direction (eg, xy direction) of the semiconductor substrate 110. As described above, the light absorption sensor 310 may be located in the non-display area NDA, and may be connected to a separate thin film transistor 120 and driven independently. The light absorption sensor 310 may absorb light of the same wavelength spectrum as the light emitted from at least one of the first, second, and third light emitting elements 210, 220, and 230 and convert it into an electrical signal, for example, a red wavelength. Light in the spectrum, green wavelength spectrum, blue wavelength spectrum, infrared wavelength spectrum, and combinations thereof can be absorbed and converted into an electrical signal. The light absorption sensor 310 may be, for example, a photoelectric diode, for example, an organic photoelectric diode containing an organic material.

Each of the first, second, and third light emitting elements 210, 220, 230 and the light absorption sensor 310 includes pixel electrodes 211, 221, 231, and 311; A common electrode 320 facing the pixel electrodes 211, 221, 231, and 311 and to which a common voltage is applied; A light emitting layer (212, 222, 232) or a light absorption layer (330) located between the pixel electrodes (211, 221, 231, 311) and the common electrode 320, a first common auxiliary layer 340, and a second common auxiliary layer Includes (350).

The first, second, and third light emitting elements 210, 220, 230 and the light absorption sensor 310 are arranged side by side along the surface direction (for example, xy direction) of the substrate 110, and the common electrode 320 formed on the front surface ), may share the first common auxiliary layer 340 and the second common auxiliary layer 350. For example, as shown in FIG. 10, the light absorption layer 330 of the light absorption sensor 310 and the light emitting layers 212, 222, and 232 of the first, second, and third light emitting devices 210, 220, and 230. may at least partially overlap each other (for example, may partially or completely overlap each other in the plane direction (e.g., xy direction) of the semiconductor substrate 110. The plane direction of the semiconductor substrate 110 (e.g., xy direction) is a horizontal direction extending parallel to the surface direction of the semiconductor substrate 110 as shown in FIG. 10 and/or on the upper surface 110S of the semiconductor substrate 110 shown in FIG. 10. It can be understood as a horizontal direction extending in parallel. The light absorbing layer 330 and the light emitting layers 212, 222, and 232 are at least partially on the same plane (e.g., the light absorbing layer 330 and the light emitting layers 212, 222, and 232 ) can be located on the xy plane extending in the xy direction intersecting each.

The common electrode 320 is continuously formed of a single material extending over the light-emitting layers 212, 222, and 232 and the light-absorbing layer 330, and is formed substantially on the entire surface of the semiconductor substrate 110. The common electrode 320 may apply a common voltage to the first, second, and third light emitting devices 210, 220, and 230 and the light absorption sensor 310. As shown, the first, second, and third light-emitting elements 210, 220, 230 and the light absorption sensor 310 extend above the light-emitting layers 212, 222, 232 and the light absorption layer 330, respectively. It may include individual portions of a single common electrode 320 that is a single material.

The first common auxiliary layer 340 is located between the light-emitting layers 212, 222, 232 and the light absorption layer 330 and the common electrode 320, and is located on the upper and lower sides of the light-emitting layers 212, 222, 232 and the light absorption layer 330. It may be continuously formed from a single material extending below the common electrode 320. As shown, the first, second, and third light emitting elements 210, 220, and 230 and the light absorption sensor 310 extend above the respective light emitting layers 212, 222, 232 and the light absorption layer 330, respectively. may include individual portions of a single first common auxiliary layer 340 that is a single material.

The first common auxiliary layer 340 may be a charge auxiliary layer (e.g., an electron auxiliary layer) that facilitates injection and/or movement of charges (e.g., electrons) from the common electrode 320 to the light emitting layers 212, 222, and 232. there is. For example, the LUMO energy level of the first common auxiliary layer 340 may be located between the LUMO energy levels of the light emitting layers 212, 222, and 232 and the work function of the common electrode 320, and the work function of the common electrode 320 , the LUMO energy level of the first common auxiliary layer 340 and the LUMO energy level of the light emitting layers 212, 222, and 232 may sequentially become shallower. On the other hand, the LUMO energy level of the first common auxiliary layer 340 may be shallower than the LUMO energy level of the light absorption layer 330 and the work function of the common electrode 320, respectively.

The first common auxiliary layer 340 may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof that satisfies the LUMO energy level, and may include, for example, a halogenated metal such as LiF, NaCl, CsF, RbCl, and RbI; Lanthanide metals such as Yb; metal oxides such as Li ₂ O and BaO; Liq(Lithium quinolate), Alq3(Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'- (pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazol-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5 -Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl) -1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5 -diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2 -methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq ₂ (beryllium bis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene- It may be, but is not limited to, 2-yl)anthracene), BmPyPhB (1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), or a combination thereof. First common auxiliary layer (340) may be one or more floors.

The second common auxiliary layer 350 is located between the light-emitting layers 212, 222, 232 and the light absorption layer 330 and the semiconductor substrate 110, and among them, the light-emitting layers 212, 222, 232 and the light absorption layer 330. and the pixel electrodes 211, 221, 231, and 311. The second common auxiliary layer 350 is continuously formed of a material extending below the light emitting layers 212, 222, 232 and the light absorbing layer 330 and above the pixel electrodes 211, 221, 231, 311. There may be. As shown, the first, second, and third light-emitting elements 210, 220, 230 and the light absorption sensor 310 are a single unit extending below each of the light-emitting layers 212, 222, 232 and the light absorption layer 330. It may include individual portions of a single second common auxiliary layer 350 of material.

The second common auxiliary layer 350 is a charge auxiliary layer (e.g., hole) that facilitates injection and/or movement of charges (e.g., holes) from the pixel electrodes 211, 221, and 231 to the light emitting layers 212, 222, and 232. auxiliary layer). For example, the HOMO energy level of the second common auxiliary layer 350 may be located between the HOMO energy level of the light emitting layer 212, 222, and 232 and the work function of the pixel electrodes 211, 221, and 231, and the pixel electrode 211 , 221, 231), the HOMO energy level of the second common auxiliary layer 350, and the HOMO energy level of the light emitting layer (212, 222, 232) may be deepened in order.

The second common auxiliary layer 350 may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof that satisfies the HOMO energy level, and may include, for example, a phthalocyanine compound such as copper phthalocyanine; DNTPD(N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4' ,4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N, -(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)), PANI/DBSA(Polyaniline/Dodecylbenzenesulfonic acid), PANI/CSA( Polyaniline/Camphor sulfonicacid), PANI/PSS (Polyaniline/Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), triphenylamine Polyetherketone (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HAT-CN(dipyrazino[2,3-f: 2',3'-h] quinoxaline-2,3,6 , 7,10,11-hexacarbonitrile), N-phenylcarbazole, carbazole-based derivatives such as polyvinylcarbazole, fluorine-based derivatives, TPD (N,N'-bis(3-methylphenyl)-N, Triphenylamine derivatives such as N'-diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), TAPC (4 ,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD(4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl) , mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto. The second common auxiliary layer 350 may be one or two or more layers.

Each of the first, second, and third light emitting elements 210, 220, and 230 and the light absorption sensor 310 includes pixel electrodes 211, 221, 231, and 311 facing the common electrode 320. One of the pixel electrodes 211, 221, 231, and 311 and the common electrode 320 is an anode and the other is a cathode. For example, the pixel electrodes 211, 221, 231, and 311 may be anodes, and the common electrode 320 may be a cathode. The pixel electrodes 211, 221, 231, and 311 are separated for each sub-pixel PX and can be electrically connected to separate thin film transistors 120 and driven independently.

The pixel electrodes 211, 221, 231, and 311 and the common electrode 320 may each be a light transmitting electrode or a reflective electrode. For example, at least one of the pixel electrodes 211, 221, 231, and 311 and the common electrode 320 may be It may be a light transmitting electrode.

The light transmitting electrode may be a transparent electrode or a semi-transmissive electrode, and the transparent electrode may have a light transmittance of about 85% or more, about 90% or more, or about 95% or more, and the translucent electrode may have a light transmittance of about 30% or more, less than about 85%, or about 40% or more. It may have a light transmittance of % to about 80% or about 40% to 75%. The transparent electrode and the semi-transparent electrode may include, for example, at least one of an oxide conductor, a carbon conductor, and a metal thin film. Oxide conductors include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum. It may be one or more selected from zinc oxide (Aluminum zinc oxide, AZO), the carbon conductor may be one or more selected from graphene and carbon nanomaterial, and the metal thin film may be aluminum (Al), magnesium (Mg), or silver (Ag). , it may be a very thin film containing gold (Au), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), an alloy thereof, or a combination thereof.

The reflective electrode may include a reflective layer having a light transmittance of about 5% or less and/or a reflectance of about 80% or more, and the reflective layer may include an optically opaque material. Optically opaque materials may include metals, metal nitrides, or combinations thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), and chromium (Cr). , nickel (Ni), alloys thereof, nitrides (eg, TiN), or combinations thereof, but are not limited thereto. The reflective electrode may be made of a reflective layer or may have a stacked structure of a reflective layer/light-transmissive layer or a light-transmissive layer/reflective layer/light-transmissive layer, and the reflective layer may be one layer or two or more layers.

For example, when the pixel electrodes 211, 221, 231, and 311 are transmissive electrodes and the common electrode 320 is a reflective electrode, the sensor-embedded display panel 1000 is a lower emitting display panel that emits light toward the semiconductor substrate 110. It may be (bottom emission type display panel). For example, when the pixel electrodes 211, 221, 231, and 311 are reflective electrodes and the common electrode 320 is a light-transmitting electrode, the sensor-embedded display panel 1000 is a top-emitting type that emits light to the opposite side of the semiconductor substrate 110. It may be a display panel (top emission type display panel). For example, when the pixel electrodes 211, 221, 231, and 311 and the common electrode 320 are each light-transmitting electrodes, the sensor-embedded display panel 1000 may be a both side emission type display panel.

For example, the pixel electrodes 211, 221, 231, and 311 may be reflective electrodes and the common electrode 320 may be a transflective electrode. In this case, the sensor-embedded display panel 1000 has a microcavity structure. can be formed. The micro-resonance structure is repeatedly reflected between a reflective electrode and a semi-transmissive electrode spaced apart by a predetermined optical length (e.g., the distance between the transflective electrode and the reflective electrode) to enhance the light of a predetermined wavelength spectrum and improve optical properties. It can be improved.

For example, light of a predetermined wavelength spectrum among the light emitted from the light emitting layers 212, 222, and 232 of the first, second, and third light emitting devices 210, 220, and 230 is repeatedly transmitted between the transflective electrode and the reflective electrode. Light that can be reflected and reformed, and among the modified light, light in the wavelength spectrum corresponding to the resonance wavelength of the microresonance can be strengthened to exhibit amplified luminescence characteristics in a narrow wavelength range. Accordingly, the sensor-embedded display panel 1000 can express colors with high color purity.

As an example, light of a predetermined wavelength spectrum among the light incident on the light absorption sensor 310 may be repeatedly reflected between a transflective electrode and a reflective electrode and be modified, and among the modified light, a wavelength spectrum corresponding to the resonance wavelength of the microresonance may be modified. Light can be strengthened and exhibit amplified photoelectric conversion characteristics in a narrow wavelength range. Accordingly, the light absorption sensor 310 can exhibit high photoelectric conversion characteristics in a narrow wavelength range.

Each of the first, second, and third light emitting devices 210, 220, and 230 includes light emitting layers 212, 222, and 232 located between the pixel electrodes 211, 221, and 231 and the common electrode 320. The light-emitting layer 212 included in the first light-emitting device 210, the light-emitting layer 222 included in the second light-emitting device 220, and the light-emitting layer 232 included in the third light-emitting device 230 have the same or different wavelengths. It may emit a spectrum of light, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof.

For example, when the first light-emitting device 210, the second light-emitting device 220, and the third light-emitting device 230 are respectively a red light-emitting device, a green light-emitting device, and a blue light-emitting device, the light-emitting device included in the first light-emitting device 210 The light emitting layer 212 may be a red light emitting layer that emits light in a red wavelength spectrum, and the light emitting layer 222 included in the second light emitting device 220 may be a green light emitting layer that emits light in a green wavelength spectrum, and the third light emitting device may be a green light emitting layer that emits light in a green wavelength spectrum. The light emitting layer 232 included in 230 may be a blue light emitting layer that emits light in a blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may each have a maximum emission wavelength greater than about 600 nm and less than 750 nm, about 500 nm to 600 nm, and about 400 nm and less than 500 nm.

For example, when at least one of the first light-emitting device 210, the second light-emitting device 220, and the third light-emitting device 230 is a white light-emitting device, the light-emitting layer of the white light-emitting device may emit light in the visible wavelength spectrum. For example, it may emit light in a wavelength spectrum of about 380 nm or more and less than 750 nm, about 400 nm to 700 nm, or about 420 nm to 700 nm.

The light-emitting layers 212, 222, and 232 may include at least one host material and a fluorescent or phosphorescent dopant, and at least one of the at least one host material and the fluorescent or phosphorescent dopant may be an organic material. Organic materials may include, for example, low-molecular-weight organic materials, and may include, for example, vapor-depositable organic materials.

For example, the light emitting layers 212, 222, and 232 are made of perylene; rubrene; 4-(dicyanomethylene)-2-methyl-6-[p-(dimethylamino)styryl]-4H-pyran; Coumarin or its derivatives; Carbazole or its derivatives; TPBi(2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); TBADN(2-t-butyl-9,10-di(naphth-2 -yl)anthracene);AND(9,10-di(naphthalene-2-yl)anthracene);CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl);TCTA(4,4 ',4"-tris(carbazol-9-yl)-triphenylamine); TPBi(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene); TBADN(3-tert-butyl-9,10- di(naphth-2-yl)anthracene); DSA(distyrylarylene); CDBP(4,4'-Bis(9-carbazolyl)-2,2'-dimethylbiphenyl); MADN(2-Methyl-9,10-bis( naphthalen-2-yl)anthracene); TCP(1,3,5-Tris(carbazol-9-yl)benzene); Alq3(tris(8-hydroxyquinolino)lithium); Pt, Os, Ti, Zr, Hf, Eu , Tb, Tm, Rh, Ru, Re, Be, Mg, Al, Ca, Mn, Co, Cu, Zn, Ga, Ge, Pd, Ag and/or Au, their derivatives or their derivatives. It may include a combination of, but is not limited to this.

The first, second, and third light emitting devices 210, 220, and 230 may be, for example, quantum dot light emitting diodes containing quantum dots or perovskite light emitting diodes containing perovskite.

Quantum dots include, for example, a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, a group IV semiconductor compound, a group I-III-VI semiconductor compound, and a group I-II-IV-VI semiconductor. It may include a compound, a group II-III-V semiconductor compound, or a combination thereof. Group II-VI semiconductor compounds include, for example, binary semiconductor compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS or mixtures thereof; Ternary semiconductor compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS or mixtures thereof; and a quaternary element semiconductor compound such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or mixtures thereof, but is not limited thereto. Group III-V semiconductor compounds include, for example, binary semiconductor compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or mixtures thereof; Tri-element semiconductor compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, or mixtures thereof; and quaternary semiconductor compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or mixtures thereof. no. Group IV-VI semiconductor compounds include, for example, binary semiconductor compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe or mixtures thereof; ternary semiconductor compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe or mixtures thereof; and quaternary element semiconductor compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, or mixtures thereof, but are not limited thereto. Group IV semiconductor compounds include, for example, monoelement semiconductors such as Si, Ge, or mixtures thereof; and binary semiconductor compounds such as SiC, SiGe, or mixtures thereof, but are not limited thereto. The Group I-III-VI semiconductor compound may be, for example, CuInSe ₂ , CuInS ₂ , CuInGaSe, CuInGaS, or a mixture thereof, but is not limited thereto. The group I-II-IV-VI semiconductor compound may be selected from, for example, CuZnSnSe, CuZnSnS, or mixtures thereof, but is not limited thereto. Group II-III-V semiconductor compounds include, for example, InZnP, but are not limited thereto.

Perovskite is CH ₃ NH ₃ PbBr ₃ , CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ SnBr ₃ , CH ₃ NH ₃ SnI ₃ , CH ₃ NH ₃ Sn _1-x Pb _x Br ₃ (0<x<1 ), CH ₃ NH ₃ Sn _1-x Pb _x I ₃ (0<x<1), HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ SnI ₃ , (C ₄ H ₉ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₅ CH ₂ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₅ CH ₂ NH ₃ ) ₂ PbI ₄ , (C ₆ H ₅ C ₂ H ₄ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₁₃ NH ₃ ) ₂ (CH ₃ NH ₃ ) _n-1 Pb _n I _3n+1 (n is a positive number) or a combination thereof, but is not limited thereto.

The light absorption sensor 310 includes a light absorption layer 330 located between the pixel electrode 311 and the common electrode 320. The light absorption layer 330 is arranged side by side with the light emitting layers 212, 222, and 232 of the first, second, and third light emitting devices 210, 220, and 230 along the surface direction (e.g., xy direction) of the semiconductor substrate 110. The light absorption layer 330 and the light emitting layers 212, 222, and 232 may be located on the same plane.

The light absorption layer 330 may be a photoelectric conversion layer that absorbs light of a predetermined wavelength spectrum and converts it into an electrical signal, and emits light emitted from at least one of the first, second, and third light emitting devices 210, 220, and 230 described above. Light reflected by the recognition target 90 may be absorbed and converted into an electrical signal. The light absorption layer 330 may absorb light in, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof.

As an example, the light absorption layer 330 can selectively absorb light in the red wavelength spectrum with a maximum absorption wavelength of more than about 600 nm and less than 750 nm, and the first, second, and third light emitting elements 210, 220, and 230 Light emitted from the mid-red light emitting device may absorb light reflected by the recognition target 90.

As an example, the light absorption layer 330 can selectively absorb light in the green wavelength spectrum with a maximum absorption wavelength of about 500 nm to 600 nm, and among the first, second, and third light emitting devices 210, 220, and 230. Light emitted from the green light emitting device may absorb light reflected by the recognition target 90.

As an example, the light absorption layer 330 can selectively absorb light in the blue wavelength spectrum with a maximum absorption wavelength between about 380 nm and less than 500 nm, and the first, second, and third light emitting elements 210, 220, and 230 Light emitted from the mid-blue light emitting device may absorb light reflected by the recognition target 90.

As an example, the light absorption layer 330 may absorb light in the red wavelength spectrum, green wavelength spectrum, and blue wavelength spectrum, that is, light in the visible light full-wave spectrum of about 380 nm to less than 750 nm, and the first, second, and A combination of light emitted from the three light-emitting devices 210, 220, and 230 may absorb light reflected by the recognition target 90.

The light absorption layer 330 may include a p-type semiconductor and/or an n-type semiconductor for photoelectric conversion of absorbed light. A p-type semiconductor and an n-type semiconductor can form a pn junction, and after receiving light from the outside to generate excitons, the generated excitons can be separated into holes and electrons. There may be one or two or more types of p-type semiconductors and n-type semiconductors, respectively, and the p-type semiconductor may be a compound represented by Formula 1 above.

In one embodiment, the light absorption layer 330 may include a compound including the compound represented by Formula 1 as a p-type semiconductor and may include a compound represented by Formula 7 as an n-type semiconductor.

The n-type semiconductor may be represented by Formula 7A or Formula 7B.

In another embodiment, the light absorption layer 330 includes the compound represented by Formula 1 as a p-type semiconductor, fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or thiophene derivative, or Formula 7 below: The compound expressed as may be included as an n-type semiconductor. These are the same as described above.

As described above, the light absorption layer 330 may be arranged side by side with the light emitting layers 212, 222, and 232 along the surface direction (e.g., xy direction) of the semiconductor substrate 110 and is the same as the light emitting layers 212, 222, and 232. It can be located on a plane.

The compound represented by Formula 1 is a p-type semiconductor or n-type semiconductor of the light absorption layer 330 and may have an energy level capable of forming effective electrical matching with the first common auxiliary layer 340, for example, the first common auxiliary layer 340. The difference between the LUMO energy level of the auxiliary layer 340 and the LUMO energy level of the compound may be about 1.2 eV or less, and within the above range, about 1.1 eV or less, about 1.0 eV or less, about 0.8 eV or less, about 0.7 eV or less. It may be about 0.5 eV or less, about 0 to 1.2 eV, about 0 to 1.1 eV, about 0 to 1.0 eV, about 0 to 0.8 eV, about 0 to 0.7 eV, about 0 to 0.5 eV, about 0.01 to 1.2 eV, about It may be 0.01 to 1.1 eV, about 0.01 to 1.0 eV, about 0.01 to 0.8 eV, about 0.01 to 0.7 eV, or about 0.01 to 0.5 eV. Accordingly, charges (eg, electrons) generated in the light absorption layer 330 can be effectively moved and/or extracted through the first common auxiliary layer 340 to the common electrode 320.

The light absorption layer 330 may be an intrinsic layer (I layer) in which a p-type semiconductor and an n-type semiconductor are mixed in a bulk heterojunction form. At this time, the p-type semiconductor and the n-type semiconductor can be mixed at a volume ratio (thickness ratio) of about 1:9 to 9:1, and within the above range, for example, they can be mixed at a volume ratio (thickness ratio) of about 2:8 to 8:2. Within the above range, it can be mixed at a volume ratio (thickness ratio) of, for example, about 3:7 to 7:3, and within the above range, it can be mixed at a volume ratio (thickness ratio) of, for example, about 4:6 to 6:4, Within the above range, for example, they can be mixed at a volume ratio (thickness ratio) of about 5:5. Having a composition ratio in the above range is advantageous for effective exciton generation and pn junction formation.

The light absorption layer 330 may include a p layer and/or an n layer instead of the intrinsic layer (I layer), or may further include a p layer and/or n layer located above and/or below the intrinsic layer (I layer). there is. For example, the p layer may include a p-type semiconductor and the n layer may include an n-type semiconductor. The light absorption layer 330 may be, for example, an I layer, p layer/n layer, p layer/I layer, I layer/n layer, or p layer/I layer/n layer, but is not limited thereto.

The thickness of the light-emitting layers 212, 222, 232 and the light-absorbing layer 330 may each independently be about 5 nm to 300 nm, and may be about 10 nm to 250 nm, about 20 nm to 200 nm, or about 30 nm to 180 nm within the above range. The difference in thickness between the light emitting layer (212, 222, 232) and the light absorbing layer 330 may be about 20 nm or less, and within the above range may be about 15 nm or less, about 10 nm or less, or about 5 nm or less, and the light emitting layer (212, 222, 232) ) and the thickness of the light absorption layer 330 may be substantially the same.

An encapsulation layer 95 is formed on the first, second, and third light emitting elements 210, 220, and 230 and the light absorption sensor 310. The encapsulation layer 95 may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic/inorganic film, or a combination thereof. The organic layer may include, for example, acrylic resin, (meth)acrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxides, nitrides and/or oxynitrides, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, It may be titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, or a combination thereof, but is not limited thereto. The organic/inorganic film may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer 95 may be one or two or more layers.

As such, the sensor-embedded display panel 1000 according to this embodiment includes first, second, and third light-emitting elements 210, 220, and 230 that display colors by emitting light of a predetermined wavelength spectrum, and the light serves as a recognition target. By including the light absorption sensor 310, which absorbs the light reflected by 90 and converts it into an electrical signal, in the same plane on the semiconductor substrate 110, the display function and recognition function (e.g., biometric recognition function) can be performed together. there is. Accordingly, unlike the existing display panel in which the sensor is manufactured as a separate module and attached to the outside of the display panel or formed at the bottom of the display panel, improved performance can be achieved without increasing the thickness, creating a slim, high-performance sensor-embedded display panel (1000). can be implemented.

Additionally, since the light absorption sensor 310 uses light emitted from the first, second, and third light emitting devices 210, 220, and 230, it can perform a recognition function (for example, a biometric recognition function) without a separate light source. Therefore, there is no need to provide a separate light source outside the display panel, thereby preventing a decrease in the aperture ratio of the display panel due to the area occupied by the light source. At the same time, the power consumed by the separate light source is saved, thereby improving the sensor-embedded display panel 1000. Power consumption can be improved.

Also, as described above, the first, second, and third light emitting elements 210, 220, 230 and the light absorption sensor 310 include a common electrode 320, a first common auxiliary layer 340, and a second common auxiliary layer ( By sharing 350), the structure and process can be simplified compared to the case where the first, second, and third light emitting devices 210, 220, 230 and the light absorption sensor 310 are formed through separate processes.

In addition, as described above, the light absorption sensor 310 may be an organic photoelectric diode including an organic light absorption layer, and thus may have light absorption more than two times higher than that of an inorganic diode such as a silicon photodiode, so it can be made thinner. It can have a highly sensitive sensing function.

In addition, as described above, the light absorption layer 330 of the light absorption sensor 310 includes a compound represented by Formula 1, thereby selectively increasing sensitivity to light in the green wavelength spectrum and providing color separation characteristics without mixing absorption spectra. can be improved. Accordingly, the sensor-embedded display panel 1000 can additionally implement an anti-spoofing effect in addition to the above-described effect, and thus increase the color separation characteristics of the light reflected from the recognition target 90 to determine the recognition target 90. ) can further increase the detail of the shape, and can optionally recognize the color of reflected light (e.g., skin color), further improving the accuracy of the biometric recognition function.

In addition, as described above, the organic material included in the light absorption layer 330 of the light absorption sensor 310 is the organic material of the light emitting layers 212, 222, and 232 of the first, second, and third light emitting devices 210, 220, and 230. By having a material and a sublimation temperature within a predetermined range, deposition can be performed in the same process, simplifying the process and increasing process stability.

In addition, as described above, the light absorption sensor 310 can be placed anywhere in the non-display area (NDA) (e.g., a portion that does not overlap vertically (e.g., z-direction) in the sensor-embedded display panel 1000, so the sensor-embedded display panel A desired number can be placed at a desired position of 1000. Therefore, for example, by arranging the light absorption sensor 310 randomly or regularly throughout the sensor-embedded display panel 1000, any part of the screen of an electronic device such as a mobile device can be detected. The biometric recognition function can also be performed, or depending on the user's choice, the biometric recognition function can be selectively performed only in specific locations where biometric recognition is required.

Hereinafter, another example of the sensor-embedded display panel 1000 according to one implementation will be described.

FIG. 11 is a cross-sectional view showing another example of a sensor-embedded display panel according to an exemplary embodiment.

Referring to FIG. 11, the sensor-embedded display panel 1000 according to one implementation, like the above-described implementation, includes a plurality of sub-pixels (PX) displaying different colors, that is, different colors selected from red, green, and blue. It includes a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3) that display first color, second color, and third color, and the first sub-pixel (PX1), the second sub-pixel (PX1) The sub-pixel PX2 and the third sub-pixel PX3 include a first light-emitting device 210, a second light-emitting device 220, and a third light-emitting device 230, respectively.

However, unlike the above-described implementation shown in FIGS. 9 and 10, the sensor-embedded display panel 1000 according to this embodiment may include a fourth light-emitting element 240 that emits light in the infrared wavelength spectrum. For example, the fourth light-emitting element 240 may be included in the fourth sub-pixel (PX4) adjacent to the first sub-pixel (PX1), the second sub-pixel (PX2), and/or the third sub-pixel (PX3) or in the non-display area. (NDA). The fourth sub-pixel (PX4) can form one unit pixel (UP) together with the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3), and the unit pixel (UP) may be arranged repeatedly along rows and/or columns.

Description of the first sub-pixel (PX1), the second sub-pixel (PX2), the third sub-pixel (PX3), the first light-emitting device 210, the second light-emitting device 220, and the third light-emitting device 230 is the same as described above.

The fourth light emitting device 240 is disposed on the semiconductor substrate 110 and may be disposed on the same plane as the first, second, and third light emitting devices 210, 220, and 230 and the light absorption sensor 310. . For example, as shown in FIG. 11, the light absorption layer 330 of the light absorption sensor 310 and the light emitting layer 212 of the first, second, third, and fourth light emitting devices 210, 220, 230, and 240 , 222, 232, 242) may at least partially overlap each other (e.g., may partially or completely overlap each other in the plane direction (e.g., xy direction) of the semiconductor substrate 110. The semiconductor The surface direction (e.g., xy direction) of the substrate 110 is a horizontal direction extending parallel to the surface direction of the semiconductor substrate 110 as shown in FIG. 11 and/or the semiconductor substrate 110 shown in FIG. 11 ) can be understood as a horizontal direction extending parallel to the upper surface 110S. The light absorbing layer 330 and the light emitting layers 212, 222, 232, and 242 are at least partially on the same plane (e.g., the light absorbing layer 330 ) and the xy plane extending in the xy direction intersecting each of the light emitting layers 212, 222, 232, and 242).

The fourth light emitting device 240 may be electrically connected to a separate thin film transistor 120 and driven independently. The fourth light-emitting device 240 may have a structure in which a pixel electrode 241, a second common auxiliary layer 350, a light-emitting layer 242, a first common auxiliary layer 240, and a common electrode 320 are sequentially stacked. Among them, the common electrode 320, the first common auxiliary layer 340, and the second common auxiliary layer 350 are connected to the first, second, and third light-emitting devices 210, 220, and 230 and the light absorption sensor 310. ) can be shared with. The light emitting layer 242 may emit light in an infrared wavelength spectrum, for example, about 750 nm or more, about 750 nm to 20 μm, about 780 nm to 20 μm, about 800 nm to 20 μm, about 750 nm to 15 μm, or about 780 nm to 15 μm. , about 800 nm to 15 μm, about 750 nm to 10 μm, about 780 nm to 10 μm, about 800 nm to 10 μm, about 750 nm to 5 μm, about 780 nm to 5 μm, about 800 nm to 5 μm, about 750 nm to 3 μm, about Maximum emission wavelength at 780 nm to 3 μm, about 800 nm to 3 μm, about 750 nm to 2 μm, about 780 nm to 2 μm, about 800 nm to 2 μm, about 750 nm to 1.5 μm, about 780 nm to 1.5 μm, or about 800 nm to 1.5 μm You can have

The light absorption sensor 310 detects light emitted from at least one of the first, second, third, and fourth light emitting elements 210, 220, 230, and 240 reflected by the recognition target 90, such as a living body or a tool. Light can be absorbed and converted into an electrical signal. For example, the light absorption sensor 310 may absorb the light emitted from the fourth light emitting device 240, which emits light in the infrared wavelength spectrum, reflected by the recognition target 90, and convert it into an electrical signal. In this case, the light absorption layer 330 of the light absorption sensor 310 may include organic materials, inorganic materials, organic-inorganic materials, or a combination thereof that selectively absorbs light in the infrared wavelength spectrum, such as quantum dots, quinoid metal complexes, Polymethine compounds, cyanine compounds, phthalocyanine compounds, merocyanine compounds, naphthalocyanine compounds, immonium compounds, diimmonium compounds, triarylmethane compounds, dipyromethene compounds, anthraquinone compounds, diquinone compounds, naphthoquinone compounds , squaryllium compounds, rylene compounds, perylene compounds, squarane compounds, pyrylium compounds, thiopyrylium compounds, diketopyrrolopyrrole compounds, boron dipyrromethene compounds, nickel-dithiol complex compounds, croconium compounds, these It may include derivatives or combinations thereof, but is not limited thereto.

The sensor-embedded display panel 1000 according to the present example includes a fourth light-emitting element 240 that emits light in the infrared wavelength spectrum and a light absorption sensor 310 that absorbs light in the infrared wavelength spectrum, according to the above-described embodiment. In addition to the recognition function (biometric recognition function), the sensitivity of the light absorption sensor 310 can be improved even in low-light environments, and the detection ability of 3D images can be further increased by expanding the dynamic range that distinguishes between black and white light and dark in detail. . Accordingly, the sensing capability of the sensor-embedded display panel 1000 can be further improved. In particular, light in the infrared wavelength spectrum can penetrate deeper into the living body due to its long wavelength characteristics and can also effectively obtain information located at different distances, so in addition to fingerprints, images or changes in blood vessels such as veins, iris and/or the face, etc. can be detected effectively, further expanding the scope of use.

The sensor-embedded display panel 1000 described above can be applied to electronic devices such as various display devices. Electronic devices such as display devices include, for example, mobile phones, video phones, smart phones, smart pads, smart watches, digital cameras, tablet PCs, laptop PCs, notebooks, computer monitors, wearable computers, televisions, digital broadcasting terminals, and electronic devices. Books, PDAs (Personal Digital Assistants), PMPs (Portable Multimedia Players), EDA (enterprise digital assistants), head mounted displays (HMDs), vehicle navigation, Internet of Things (IoT), Internet of Things (IoE) devices ), drones, door locks, safes, automated teller machines (ATMs), security devices, medical devices, or automobile electrical components, but are not limited to these.

FIG. 12 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an example.

Referring to FIG. 12, the electronic device 2000 includes the above-described sensor-embedded display panel 1000, and the light absorption sensor 310 is disposed on the front or part of the sensor-embedded display panel 1000, thereby detecting light from any part of the screen. The biometric function can be performed or, depending on the user's choice, the biometric function can be selectively performed only in specific locations where biometric identification is required.

An example of a method of recognizing the recognition target 90 in an electronic device 2000 such as a display device is, for example, using the first, second and third light emitting elements 210, 220, and 230 of the sensor-embedded display panel 1000 ( Or, by driving the first, second, third, and fourth light-emitting devices (210, 220, 230, 240) and the light absorption sensor 310, the first, second, and third light-emitting devices (210, 220, 230) (or detecting the light reflected from the recognition target 90 among the light emitted from the first, second, third, and fourth light emitting elements 210, 220, 230, and 240) by the light absorption sensor 310, Comparing the pre-stored image of the recognition target 90 with the image of the recognition target 90 detected by the light absorption sensor 310, determining whether the compared images match, and recognizing the recognition target 90 if they match. Upon determining that this has been completed, the method may include turning off the light absorption sensor 310, allowing user access to the display device, and driving the sensor-embedded display panel 1000 to display an image.

FIG. 13 is a schematic diagram illustrating an example of the configuration of an electronic device according to an implementation.

Referring to FIG. 13, the electronic device 2000 may further include a bus 1310, a processor 1320, a memory 1330, and at least one additional device 1340 in addition to the components described above. Information of the above-described sensor-embedded display panel 1000, processor 1320, memory 1330, and at least one additional device 1340 may be transferred to each other through the bus 1310.

The processor 1320 includes hardware including logic circuits; Hardware/software combinations, such as processor implementation software; or may include one or more processing circuitry, such as a combination thereof. For example, the processing circuit may include a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, and a field programmable gate array. , FPGA), system-on-chip (SoC), programmable logic unit, microprocessor, application-specific integrated circuit (ASIC), etc. As an example, the processing circuitry may include a non-transitory computer readable storage device. For example, the processor 1320 may control the display operation of the sensor-embedded display panel 1000 or the sensor operation of the light absorption sensor 310.

The memory 1330 can store an instruction program, and the processor 1320 can perform functions related to the sensor-embedded display panel 1000 by executing the stored instruction program.

One or more additional devices 1340 may be one or more communication interfaces (e.g., wireless communication interfaces, wired interfaces), user interfaces (e.g., keyboards, mice, buttons, etc.), power supplies and/or power supply interfaces, or a combination thereof. there is.

Units and/or modules described herein may be implemented using hardware components and software components. For example, hardware components may include microphones, amplifiers, band-pass filters, audio-to-digital converters, and processing devices. A processing unit may be implemented using one or more hardware devices configured to perform and/or execute program code by performing arithmetic, logic, and input/output operations. A processing device may include a processor, controller and arithmetic logic unit, digital signal processor, microcomputer, field programmable array, programmable logic unit, microprocessor, or any other device capable of responding to and executing instructions. . A processing device may access, store, operate, process, and generate data in response to the execution of an operating system (OS) and one or more software running on the operating system.

Software may include computer programs, code, instructions, or combinations thereof and may transform a processing device for special purposes by independently or collectively directing and/or configuring the processing device to operate as desired. Software and data may be permanently or temporarily embodied in machines, components, physical or virtual equipment, computer storage media or devices, or signal waves capable of providing or interpreting instructions or data to a processing device. Software can also be distributed over networked computer systems so that the software can be stored and executed in a distributed manner. Software and data may be stored by one or more non-transitory computer readable storage devices.

Methods according to the above-described example implementations may be recorded on a non-transitory computer readable storage device containing program instructions for implementing various operations of the above-described example implementations. Storage devices may also include program instructions, data files, data structures, etc., alone or in combination. Program instructions recorded in the storage device may be those specifically designed for this implementation or may be known and usable by those skilled in the art of computer software. Examples of non-transitory computer readable storage devices include magnetic media such as hard disks, floppy disks, and magnetic tapes; Optical media such as CD-ROM discs, DVDs, and/or Blu-ray discs; magneto-optical media such as optical disks; and hardware devices configured to store and execute program instructions, such as ROM, RAM, and flash memory. The above-described device may be configured to operate as one or more software modules to perform the above-described operations.

The above-described implementation example will be described in more detail through examples below. However, the following examples are for illustrative purposes only and do not limit the scope of rights.

Synthesis example

Synthesis Example 1-1: Synthesis of a compound represented by Formula 1-1

[Formula 1-1]

[Reaction Scheme 1-1]

(i) Synthesis of compound (1)

9,9-dimethyl-9,10-dihydroacridine (9,9-dimethyl-9,10-dihydroac-ridine) 1.50g (7.17 mmol), 2-iodo-para-xylene (2- iodo- p -xylene) 1.23 ml (8.60 mmol), 10 mol% of Bis(dibenzyl-ideneacetone)palladium(0), Pd(dba) ₂ ) 0.41 g (0.72 mmol), 0.58 ml (1.43 mmol) of 20 mol% tri- tert -butylphosphine (P(tBu) ₃ ) and 2.07 g (21.5 mmol) of sodium tert-butoxide (NaO t Bu) were dissolved in toluene 30. Heat and reflux at ml for 2 hours. The obtained product was separated and purified by silica gel column chromatography (hexane:dichloromethane = 9:1 volume ratio) to obtain 2.0 g of 10-(2,5-dimethylphenyl)-9,9-dimethyl-9,10-dihydroacridine (yield 85%). ) to get

(ii) Synthesis of compound (2)

0.84 ml (8.9 mmol) of Phosphoryl Chloride was added dropwise to 2.21 ml (28.6 mmol) of N,N -Dimethylformamide at 0°C, and then incubated at room temperature (24°C) for 2 hours . Stir for a while. This solution was slowly dropped into 90 ml of dichloromethane solution containing 1.4 g (4.47 mmol) of compound (1) at 0°C, and then stirred at room temperature for 1 hour. Afterwards, water was added to the product, 2M aqueous sodium hydroxide solution was added until the pH value reached 14, and then stirred at room temperature for 2 hours. The organic layer extracted with dichloromethane was washed with aqueous sodium chloride solution, dried with anhydrous magnesium sulfate, and then concentrated. The product obtained through this is separated and purified through silica gel column chromatography (volume ratio changed from hexane:dichloromethane = 3:2 to dichloromethane 100%) to obtain 1.40 g (yield: 92%) of compound (2).

(ii) Synthesis of the compound represented by Formula 1-1

Compound (2) 1.00 g (2.46 mmol) was suspended in 100 ml of ethanol, and 1H-cyclopenta[b]naphthalene-1,3(2H)-dione (1H-cyclopenta[b]naphthalene-1 , 0.39 g (1.64 mmol) of 3(2H)-dione) was added, stirred at 50°C for 4 hours, and then concentrated under reduced pressure. After silica gel filter, recrystallization was performed using chloroform and ethanol to obtain 1.03g (yield: 75%) of the compound represented by Chemical Formula 1-1. The compound is purified by sublimation to a purity of 99.9%.

^OneH NMR (500 MHz, CD₂Cl₂): δ 9.15 (d, 1H), 8.43 (d, 2H), 8.11 (m, 3H), 7.87 (s, 1H), 7.69 (m, 2H), 7.57 (m, 1H), 7.41 (d, 1H), 7.32 (d, 1H), 7.03 (m, 3H), 6.24 (dd, 2H), 2.04 (s, 3H), 2.03 (s, 3H), 1.84 (s, 6H)

Synthesis Example 1-2: Synthesis of a compound represented by Formula 1-2

[Formula 1-2]

[Scheme 1-2]

In step (i) of Synthesis Example 1, 2-iodo-1,4-dimethoxybenzene (2-iodo-1,4-) was used instead of 2-iodo -p-xylene (2-iodo-p -xylene). The compound represented by Chemical Formula 1-2 was obtained in the same manner as in Synthesis Example 1 except that dimethoxybenzene) was used (yield 75%). The obtained compound is purified by sublimation to a purity of 99.9%.

^OneH NMR (500 MHz, CD₂Cl₂): δ 9.09 (s, 1H), 8.42 (d, 2H), 8.09 (m, 3H), 7.86 (s, 1H), 7.67 (m, 2H), 7.53 (m, 1H), 7.13 (m, 1H), 7.02 (m, 1H), 6.85 (s, 1H), 6.35 (m, 2H), 3.79 (s, 3H), 3.68 (s, 3H), 1.80 (s, 6H)

Synthesis Example 1-3: Synthesis of a compound represented by Formula 1-3

[Formula 1-3]

[Scheme 1-3]

In step (iii) of Synthesis Example 1, instead of 1H-cyclopenta[b]naphthalene-1,3(2H)-dione, 1,3- The compound represented by Chemical Formula 1-3 was obtained in the same manner as in Synthesis Example 1, except that 1,3-dimethylbarbituric acid was used (yield 82%). The obtained compound is purified by sublimation to a purity of 99.9%.

¹ H NMR (500 MHz, CD ₂ Cl ₂ ): δ 8.67 (d, 1H), 8.47 (s, 1H), 8.13 (dd, 1H); 7.53 (dd, 1H), 7.39 (d, 1H), 7.29 (d, 1H), 7.02 (m, 3H), 6.24 (m, 2H), 3.76 (s, 6H), 2.39 (s, 3H), 2.00 (s, 3H), 1.76 (s, 6H)

Comparative Synthesis Example 1-1C: Synthesis of the compound represented by Formula 1-1C

[Formula 1-1C]

[Scheme 1-1C]

(i) Synthesis of compound (1)

Add 7.03 g (28.55 mmol) of 10H-Phenoselenazine and 6.34 g (34.26 mmol) of p-bromobenzaldehyde into a two-neck round bottom flask and purge with N ₂ gas. . To the above reactant, 150 mL of toluene, Bis(dibenzylideneacetone)palladium(0), Pd(dba) ₂ ) (1.64 g, 2.85 mmol), tri- tert -butylphosphine (tri- tert) -butylphosphine) (1.16g, 5.71 mmol) and Cesium carbonate (27.90g, 85.65 mmol) were added dropwise and refluxed at 105 ^o C for 12 hours. The obtained product is separated and purified by silica gel column chromatography (toluene:hexane = 1:4 volume ratio) to obtain compound (1) (5 g, yield 50%).

(ii) Synthesis of Compound 1-1C

Compound (1) 1.33 g (3.78 mmol) was suspended in 100 ml of ethanol, and 1H-cyclopenta[b]naphthalene-1,3(2H)-dione (1H-cyclopenta[b]naphthalene-1 ,3(2H)-dione, 0.82 g (4.16 mmol)) was added, stirred at 50°C for 4 hours, and then concentrated under reduced pressure. After silica gel filter, recrystallization was performed using chloroform and ethanol to obtain 1.30 g (yield: 65%) of the compound represented by Chemical Formula 1-1C. The compound is purified by sublimation to a purity of 99.9%.

¹ H NMR (600 MHz, CDCl ₃ ): δ=8.48 (d, 2H), 8.45 (s, 1H), 8.43 (s, 1H), 8.07 (dd, 2H), 7.87(s, 1H), 7.69 ( d, 2H), 7.66 (dd, 2H), 7. 64 (d, 2H), 7.46 (t, 2H), 7.28 (t, 2H), 7.01 (d, 2H).

Comparative Synthesis Example 1-2C: Synthesis of the compound represented by Formula 1-2C

[Formula 1-2C]

[Scheme 1-2C]

In step (i) of Synthesis Example 1, 2-iodoselenophene was used instead of 2-iodo- p -xylene, and 9,9-dimethyl-9 , Instead of 10-dihydroacridine (9,9-dimethyl-9,10-dihydroacridine), 10,10-dimethyl-5,10-dihydrodibenzo[b,e][1,4]azacillin ( The compound represented by Chemical Formula 1-2C was obtained in the same manner as in Synthesis Example 1, except that 10,10-dimethyl-5,10-dihydrodibenzo[b,e][1,4]azasiline) was used (yield 72%) . The obtained compound is purified by sublimation to a purity of 99.9%.

¹ H NMR ppm (300 MHz, CDCl ₃ ) 8.35 (d, 2H), 8.03 (m, 3H), 7.92 (m, 3H), 7.64 (m, 2H), 7.52 (d, 2H), 7.43 (m, 4H), 7.01 (d, 1H), 0.52 (s, 6H)

Comparative Synthesis Example 1-3C: Synthesis of the compound represented by Formula 1-3C

[Formula 1-3C]

[Scheme 1-3C]

In step (i) of Synthesis Example 1, 1-iodo-3-methoxybenzene was used instead of 2-iodo- p -xylene. 10,10-dimethyl-5,10-dihydrodibenzo[b,e] instead of 9,9-dimethyl-9,10-dihydroacridine [1,4]azasiline (10,10-dimethyl-5,10-dihydrodibenzo[b,e][1,4]azasiline) was used in the same manner as Synthesis Example 1, except that it was expressed in Formula 1-3C. Obtain a compound (yield 80%). The obtained compound is purified by sublimation to a purity of 99.9%.

¹ H NMR (500 MHz, CD ₂ Cl ₂ ) δ 9.36 (d, 1H), 8.48 (s, 1H), 8.42 (s, 2H), 8.13 (m, 2H), 7.71 (m, 4H), 7.47 ( t, 2H), 7.42 (d, 2H), 7.32 (t, 2H), 6.76 (dd, 1H). 6.56 (d, 1H), 3.81 (s, 3H), 0.44 (s, 6H)

Comparative Synthesis Example 1-4C: Synthesis of the compound represented by Formula 1-4C

[Formula 1-4C]

[Scheme 1-4C]

Formula 1-4C in the same manner as in Synthesis Example 1, except that bromobenzene was used instead of 2-iodo- p -xylene in step (i) of Synthesis Example 1. A compound expressed as is obtained (yield 77%). The obtained compound is purified by sublimation to a purity of 99.9%.

¹ H NMR (500 MHz, CD ₂ Cl ₂ ) δ 9.14 (s, 1H), 8.44 (d, 2H), 8.42 - 8.10 (m, 3H), 7.87 (s, 1H), 7.72-7.68 (m, 4H) ), 7.61 (t, 1H), 7.55 (d, 1H), 7.36 (d, 2H), 7.04-7.01 (m, 2H). 6.36 (d, 1H), 6.30 (d, 1H), 1.84 (s, 6H).

Synthesis Example 2-1: Synthesis of a compound represented by Formula 2-1

[Formula 2-1]

A mixture of 1,4,5,8-naphthalenetetracarboxylic dianhydride (1eq.) and 4-chloroaniline (2.2eq.) was dissolved in dimethylformamide (DMF) solvent, placed in a two-necked, round-bottomed flask, and incubated at 180°C for 24 hours. Stir. Then, after lowering the temperature to room temperature, methanol is added to precipitate the product and filtered to obtain a powder-like material. The material is then washed several times with methanol and purified by a recrystallization process using ethyl acetate and dimethyl sulfoxide (DMSO). The obtained product is then placed in an oven and dried in vacuum at a temperature of 80°C for 24 hours to obtain a compound represented by Chemical Formula 3-1. The yield is over 50%.

¹ H NMR (300 MHz, CDCl ₃ with Hexafluoroisopropanol): δ = 8.85 (s, 4H), 7.63 (s, 4H), 7.60 (s, 4H).

Synthesis Example 2-2: Synthesis of a compound represented by Formula 2-2

[Formula 2-2]

The compound represented by Chemical Formula 2-2 (manufactured by Tokyo Chemical Industry) is prepared by sublimation purification so that it can be used as an n-type semiconductor in photoelectric devices.

Synthesis Example 2-3

Fullerene (C ₆₀ , nanom purple ST, manufactured by Frontier Carbon Corporation) is prepared so that it can be used as an n-type semiconductor in photoelectric devices.

Evaluation I: Evaluation of light absorption properties of compounds

The light absorption characteristics (maximum absorption wavelength and full width at half maximum (FWHM)) according to wavelength of the compounds according to Synthesis Examples 1-1 to 1-3 and Comparative Synthesis Examples 1-1C and 1-2C were evaluated. Compounds according to Synthesis Examples 1-1 to 1-3 and Comparative Synthesis Examples 1-1C and 1-2C were deposited to form thin films (thickness 30 nm), and then each thin film was subjected to Cary 5000 UV Spectrophotometer (manufactured by Varian). is used to evaluate light absorption characteristics in the ultraviolet-visible (UV-Vis) region. The measurement results of the maximum absorption wavelength are listed in Table 1, and the measurement results of the full width at half maximum (FWHM) are listed in Table 2.

compound λ _max (nm) Synthesis Example 1-1 540 Synthesis Example 1-2 540 Synthesis Example 1-3 540 Comparative Synthesis Example 1-1C 510 Comparative Synthesis Example 1-2C 560

compound FWHM (nm) Synthesis Example 1-1 93 Synthesis Example 1-2 92 Synthesis Example 1-3 95

Referring to Table 1, it can be seen that the maximum absorption wavelength of the compounds of Synthesis Examples 1-1 to 1-3 is 540 nm, showing excellent green wavelength absorption selectivity. In comparison, it can be seen that Comparative Synthesis Example 1-1C absorbs some of the blue light and Comparative Synthesis Example 1-2C absorbs some of the red light.

Referring to Table 2, the half width of the compounds of Synthesis Examples 1-1 to 1-3 was narrow at 95 nm or less, showing excellent wavelength selectivity.

Evaluation II: Evaluation of sublimation temperature and decomposition temperature of compounds

The sublimation temperature (T _s ) and decomposition temperature (T _d ) of the compounds according to Synthesis Examples 1-1 to 1-3 were evaluated. The sublimation temperature is evaluated by thermogravimetric analysis (TGA), and the sublimation temperature is evaluated from the temperature at which the weight of the sample decreases by 10% compared to the initial weight by raising the temperature under a high vacuum of 10 Pa or less. Decomposition temperature (T _d ) is measured by Pyrolysis-GC/MS (Py-GC/MS). The results are shown in Table 3.

T _s(10) (℃) T _d (°C) Synthesis Example 1-1 231 334 Synthesis Example 1-2 258 311 Synthesis Example 1-3 201 279

* T _s(10) (℃): Temperature when the weight of the sample decreases by 10% compared to the initial weight

Referring to Table 3, it can be seen that the sublimation temperature of the compounds according to Synthesis Examples 1-1 to 1-3 is lower than the decomposition temperature, so the deposition stability of the compounds according to Synthesis Examples 1-1 to 1-3 is excellent. You can.

Evaluation III: Energy levels and energy band gaps of compounds

The compounds according to Synthesis Examples 1-1 to 1-3 were respectively deposited on a glass substrate, and the energy level of the deposited thin film was determined. The HOMO energy level can be evaluated by the amount of photoelectrons emitted according to the energy by irradiating UV light to the thin film using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). The LUMO energy level can be obtained by obtaining the energy band gap using a UV-Vis spectrometer (Shimadzu Corporation) and then calculating the LUMO energy level from the energy band gap and the already measured HOMO energy level. The results are shown in Table 4.

HOMO (eV) LUMO (eV) Energy Band Gap (eV) Synthesis Example 1-1 5.67 3.60 2.07 Synthesis Example 1-2 5.62 3.52 2.10 Synthesis Example 1-3 5.61 3.56 2.05

* HOMO, LUMO: Absolute value

Referring to Table 4, it can be seen that the compounds according to Synthesis Examples 1-1 to 1-3 can be used as p-type semiconductors.

Example

Example 1-1: Fabrication of photoelectric device

The ITO glass substrate prepared by sputtering ITO on a glass substrate to form an anode with a thickness of about 150 nm is ultrasonic cleaned in acetone/isopropyl alcohol/pure water for 15 minutes each and then UV ozone cleaned. Next, the compound according to Synthesis Example 1 and C60 were co-deposited at a volume ratio of 1:1 to form a 100 nm thick active layer, and then 7 nm of ITO was vacuum deposited on the top to form ITO (150 nm)/active layer (100 nm)/ITO. An optoelectronic device with a (7 nm) structure is fabricated.

Example 1-2: Fabrication of photoelectric device

Example 1 above, except that the compound represented by Chemical Formula 1-2 (p-type semiconductor) according to Synthesis Example 1-2 was used instead of the compound represented by Chemical Formula 1-1 (p-type semiconductor) according to Synthesis Example 1-1. Manufacture the photoelectric device using the same method as in -1.

Example 1-3: Fabrication of photoelectric device

Example 1 above, except that the compound represented by Chemical Formula 1-3 according to Synthesis Example 1-3 (p-type semiconductor) was used instead of the compound represented by Chemical Formula 1-1 according to Synthesis Example 1-1 (p-type semiconductor). Manufacture the photoelectric device using the same method as in -1.

Comparative Example 1-1C: Fabrication of photoelectric device

The above examples except that the compound represented by Chemical Formula 1-1C according to Comparative Synthesis Example 1-1C (p-type semiconductor) was used instead of the compound represented by Chemical Formula 1-1 according to Synthesis Example 1-1 (p-type semiconductor). Manufacture the photoelectric device using the same method as in 1-1.

Comparative Example 1-2C: Fabrication of photoelectric device

The above examples except that the compound represented by Chemical Formula 1-2C (p-type semiconductor) according to Comparative Synthesis Example 1-2C was used instead of the compound represented by Chemical Formula 1-1 (p-type semiconductor) according to Synthesis Example 1-1. Manufacture the photoelectric device using the same method as in 1-1.

Comparative Example 1-3C: Fabrication of photoelectric device

The above examples except that the compound represented by Chemical Formula 1-3C (p-type semiconductor) according to Comparative Synthesis Example 1-3C was used instead of the compound represented by Chemical Formula 1-1 (p-type semiconductor) according to Synthesis Example 1-1. Manufacture the photoelectric device using the same method as in 1-1.

Comparative Example 1-4C: Fabrication of photoelectric device

The above examples except that the compound represented by Chemical Formula 1-4C (p-type semiconductor) according to Comparative Synthesis Example 1-4C was used instead of the compound represented by Chemical Formula 1-1 (p-type semiconductor) according to Synthesis Example 1-1. Manufacture the photoelectric device using the same method as in 1-1.

Evaluation IV: Evaluation of external quantum efficiency of photovoltaic devices

The external quantum efficiency (EQE) of the photoelectric devices according to Examples 1-1 to 1-3 and Comparative Examples 1-1C to 1-4C was evaluated at room temperature and high temperature. External quantum efficiency is evaluated by Incident Photon to Current Efficiency (IPCE) at wavelengths of 450 nm (blue, B), 530 nm (green, G), and 630 nm (red, R). External quantum efficiency at high temperature is measured after leaving the photoelectric device at 160°C for 1 hour and at 180°C for 1 hour. Among them, the results of Examples 1-1 to 1-3 and Comparative Examples 1-1C and 1-3C are shown in Table 5.

EQE(3V, B/G/R, %) Room temperature (25℃) 160℃ 180℃ Example 1-1 19/56/18 18/52/17 18/51/16 Example 1-2 22/55/20 22/54/20 21/51/19 Example 1-3 22/55/20 22/54/20 21/51/19 Comparative Example 1-1C 11/13/2 15/17/2 - Comparative Example 1-3C 24/39/13 23/38/12 21/35/12

In Table 5, “-” means that the device is damaged and cannot be measured.

Referring to Table 5, the photoelectric devices according to Examples 1-1 to 1-3 have improved external quantum efficiency (photoelectric conversion efficiency) in the green wavelength spectrum compared to the photoelectric devices according to Comparative Examples 1-1C or 1-3C. ) can be confirmed.

Evaluation V: Evaluation of residual charge characteristics

The residual charges of the photoelectric devices according to Examples 1-1 to 1-3 and Comparative Examples 1-1C to 1-4C were evaluated.

If all of the photoelectrically converted charges in one frame remain unused for signal processing, the charges from the previous frame are duplicated and read in the next frame. At this time, the amount of charge remaining until the next frame is called the amount of residual charge. The amount of residual charge is measured by irradiating light in the green wavelength (532 nm) range where photoelectric conversion can occur for 0.04 ms, turning off the light, and integrating the current measured in 10 ^-6 seconds with an oscilloscope device over time. . The amount of residual charge is evaluated in units of h+/㎛ ² based on 5000 lux of light. The results are shown in Table 6.

Residual charge (h+/㎛ ² ) Room temperature (25℃) 160℃ 180℃ Example 1-1 8 10 6 Example 1-2 11 8 7 Example 1-3 11 8 7 Comparative Example 1-1C Not measured 884 - Comparative Example 1-2C Not measured 499 499 Comparative Example 1-3C 45 - 20 Comparative Example 1-4C 128 51 56

In Table 6, “-” means that the device is damaged and cannot be measured.

Referring to Table 6, it can be seen that the photoelectric device according to the example has a lower number of residual charges at room temperature and high temperature compared to the photoelectric device according to the comparative example.

Evaluation VI: Mobility evaluation of photovoltaic devices

In order to evaluate the mobility of the photoelectric device, 550 nm light (laser pulse (pulse width: 6 nm) was irradiated to the photoelectric device according to Examples 1-1 to 1-3 and Comparative Examples 1-1C to 1-4C. , measure the photocurrent by applying a bias voltage (V). Measure the time (t) at which the measured photocurrent reaches its maximum and calculate the mobility (μ) using Equation 1 below.

[Equation 1]

In Equation 1, T is the thickness of the active layer, t is the time when the photocurrent value is maximum, and V is the applied voltage.

The results of Examples 1-1 to 1-3 and Comparative Examples 1-1C to 1-4C are shown in Table 7.

Mobility (cm ² /V·sec) Example 1-1 ^6.4 Example 1-2 ^7.3 Example 1-3 ^7.3 Comparative Example 1-1C ^4.2 Comparative Example 1-2C ^4.8 Comparative Example 1-3C ^4.4 Comparative Example 1-4C ^1.7

Referring to Table 7, it can be seen that the mobility of the photoelectric devices of Examples 1-1 to 1-3 is superior to that of the photoelectric devices of Comparative Examples 1-1C to 1-4C.

Although the embodiments have been described in detail above, the scope of rights is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concepts defined in the following claims also fall within the scope of rights.

10: first electrode 20: second electrode
30: active layer 40, 45: charge auxiliary layer
100, 200: Photoelectric element 300, 400, 500, 600, 700: Organic CMOS image sensor
110: semiconductor substrate 70B, 72B: blue filter 70R, 72R: red filter
70, 72: color filter layer 85: through hole
60: lower insulating layer 80: upper insulating layer
50B, 50R: photo-sensing element 55: charge storage
90: Recognition target 95: Envelope layer
120: thin film transistor
140: insulating layer 141, 142: contact hole
150: Pixel definition layer
310: Absorbance sensor
210, 220, 230: light emitting device
211, 221, 231, 311: Pixel electrode
212, 222, 232: light emitting layer 320: common electrode
330: light absorption layer 340: first common auxiliary layer
350: Second common auxiliary layer 1000: Sensor-embedded display panel
2000: Electronic devices

Claims (32)

Compound represented by the following formula 1:
[Formula 1]

In Formula 1,
Ar ¹ and Ar ² are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a fused ring thereof,
G is -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -N=, -NR ^a -, -BR ^b -, -SiR ^c R ^d -, -SiR ^cc R ^dd -, -GeR ^e R ^f -, -GeR ^ee R ^ff -, -(CR ^g R ^h ) _n1 -, -(CR ^gg R ^hh )-, -(C(R ⁱ )=(C(R ^j ))- and -(C(R ⁱⁱ )=(C(R ^jj ))-, where R ^a , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , R ^h , R ⁱ and R ^j are each independently selected from hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group and substituted or unsubstituted C1 to C10 alkoxy group, and R ^cc and R ^dd , R ^ee and R ^ff , R Each pair of ^gg and R ^hh , or R ⁱⁱ and R ^jj may be connected to each other to form a ring structure, and n1 of -(CR ^g R ^h ) _n1 - is 1 or 2),
^{R _ _} and z is an integer from 0 to 2, x+y+z is 4 or less,
R ^x and R ^y exist in para positions to each other,
R ¹ is hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group,
Ar ³ is C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group) , a cyano group or a cyano-containing group), a substituted or unsubstituted C6 to C30 hydrocarbon ring group having at least one functional group selected from the group consisting of C=O, C=S, C=Se, C=Te and C=CR ^p R ^q (where R ^p and R ^q are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group). A substituted or unsubstituted group having at least one functional group selected from the group consisting of It is a C2 to C30 heterocyclic group or a fused ring thereof. In paragraph 1:
In Formula ^{1 , R} In paragraph 1:
In Formula 1, G is -(CR ^g R ^h ) _n1 - or -(CR ^gg R ^hh )- (where R ^g and R ^h are each independently hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl group) and substituted or unsubstituted C1 to C10 alkoxy groups, R ^gg and R ^hh may be connected to each other to form a ring structure and n1 is 1 or 2), R ^x and R ^y are present in para positions to each other. compound. In paragraph 1:
In Formula 1, at least one of Ar ¹ and Ar ² includes a hetero atom selected from nitrogen (N), sulfur (S), and selenium (Se) at position 1. In paragraph 1:
In Formula 1, the ring group containing Ar ¹ and Ar ² is a compound selected from moieties represented by the following Formula 2:
[Formula 2]

In Formula 2,
G is the same as in Formula 1,
R ¹¹ to R ¹⁴ and R ²¹ to R ²⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. , substituted or unsubstituted C3 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or optionally two of R ¹¹ to R ¹⁴ adjacent to each other may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group, and optionally, two adjacent ones of R ²¹ to R ²⁴ may be connected to each other to form a 5-membered aromatic ring group or a 6-membered aromatic ring group,
* is the point connected to Chemical Formula 1. In paragraph 1:
In Formula 1, Ar ¹ and Ar ² are a C6 to C30 arene group unsubstituted by an electron withdrawing group represented by Ar ³ , and a C3 to C30 heteroarene group unsubstituted by an electron withdrawing group represented by Ar ³ . and compounds selected from condensed rings thereof. In paragraph 1:
In Formula 1, the ring structure is a substituted or unsubstituted C5 to C30 hydrocarbon ring group or a substituted or unsubstituted C2 to C30 heterocyclic group. In paragraph 1:
In Formula 1, the ring structure includes a moiety represented by Formula 3:
[Formula 3]

In Formula 3 above,
Ar ³³ and Ar ³³ are each independently a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heteroarene group, or a condensed ring thereof,
* means the point connected to Chemical Formula 1. In paragraph 1:
A compound in which each ring structure in Formula 1 includes one of the moieties represented by Formula 4 below.
[Formula 4]

In Formula 4 above,
X ^a and X ^b are each independently -O-, -S-, -Se-, -Te-, -S(=O)-, -S(=O) ₂ -, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -SiR ^bb R ^cc -, -GeR ^d R ^e - or -GeR ^dd R ^ee -, where R ^a1 , R ^a2 , R ^b , R ^c , R ^d and R ^e are each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, substituted or unsubstituted C6 to C20 aryloxy group or substituted or unsubstituted C3 to C20 heteroaryl group, and at least one pair of R ^bb and R ^cc or R ^dd and R ^ee may be linked to each other to form a ring structure),
L ^a is -O-, -S-, -Se-, -Te-, -NR ^a1 -, -BR ^a2 -, -SiR ^b R ^c -, -GeR ^d R ^e -, -(CR ^f R ^g ) _n1 -, -(C(R ^p )=N))- and single bonds selected from R ^a1 , R ^a2 , R ^b , R ^c , R ^d , R ^e , R ^f , R ^g , and R ^p is each independently hydrogen, deuterium, halogen, cyano group, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, or substituted or unsubstituted is a C6 to C20 aryloxy group and n1 of -(CR ^f R ^g ) _n1 - is 1 or 2),
Hydrogen of each ring is optionally deuterium, halogen, substituted or unsubstituted C1 to C20 alkyl group, substituted or unsubstituted C1 to C20 alkoxy group, substituted or unsubstituted C6 to C20 aryl group, and substituted or unsubstituted C6 may be replaced with at least one substituent selected from a C20 aryloxy group,
* is the point connected to Chemical Formula 1. In paragraph 9:
In Formula 4, CH present in the aromatic ring of moiety (3), (4), (5), (6), (7), (8) or (9) is replaced with N. In paragraph 1:
In Formula 1, Ar ³ is a cyclic group represented by the following Formula 5:
[Formula 5]

In Formula 5 above,
Ar ³ ' is selected from a substituted or unsubstituted C6 to C30 aryl group and a substituted or unsubstituted C3 to C30 heteroaryl group,
Z ¹ and Z ² is each independently selected from O, S, Se, Te, and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or It is a cyano-containing group,
* is the point connected to Chemical Formula 1. In paragraph 1:
In Formula 1, Ar ³ is a cyclic group represented by any one of the following Formulas 6A to 6G:
[Formula 6A]

In Formula 6A,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
Z ³ is selected from N and CR ^c (wherein R ^c is selected from hydrogen, deuterium and substituted or unsubstituted C1 to C10 alkyl groups),
R ¹¹ , R ¹² , R ¹³ , R ¹⁴ and R ¹⁵ are the same or different and are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted selected from a ringed C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyano-containing group, and combinations thereof, or R ¹² and R ¹³ and R ¹⁴ and R ¹⁵ each exist independently or are connected to each other Can form fused aromatic rings,
n is 0 or 1,
* is the point connected to Formula 1,
[Formula 6B]

In Formula 6B,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
Z ³ is selected from O, S, Se, Te and C(R ^a )(CN), where R ^a is selected from hydrogen, cyano group (-CN) and C1 to C10 alkyl group,
R ¹¹ and R ¹² are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C1 to C30 aryl group. selected from C4 to C30 heteroaryl group, halogen, cyano group (-CN), and combinations thereof,
* is the point connected to Formula 1,
[Formula 6C]

In Formula 6C,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), and combinations thereof,
* is the point connected to Formula 1,
[Formula 6D]

In Formula 6D,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),
G ¹ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,
R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof, and R ¹² and R ¹³ exist independently or are connected to each other to form a fused aromatic ring. You can do it,
n is 0 or 1,
* is the point connected to Formula 1,
[Formula 6E]

In Formula 6E,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
Z ³ is selected from N and CR ^c (where R ^c is selected from hydrogen and a substituted or unsubstituted C1 to C10 alkyl group),
G ² is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,
R ¹¹ , R ¹² and R ¹³ are the same or different and each independently represents hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group. selected from a group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group, cyano-containing group, and combinations thereof,
n is 0 or 1,
* is the point connected to Formula 1,
[Formula 6F]

In Formula 6F,
Z ¹ and Z ² are each independently selected from O, S, Se, Te and CR ^a R ^b , where R ^a and R ^b are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
R ¹¹ is hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C4 to C30 heteroaryl group, halogen, cyano group (-CN), cyanogroup. selected from furnace-containing groups and combinations thereof,
G ³ is selected from O, S, Se, Te, SiR ^x R ^y and GeR ^z R ^w , where R ^x , R ^y , R ^z and R ^w are the same or different and each independently hydrogen, deuterium, halogen , cyano group, substituted or unsubstituted C1 to C20 alkyl group and substituted or unsubstituted C6 to C20 aryl group,
* is the point connected to Formula 1,
[Formula 6G]

In the above formula 6G,
R ^a and R ^b are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, or a cyano-containing group,
Z ¹ to Z ⁴ are each independently selected from O, S, Se, Te and CR ^c R ^d , where R ^c and R ^d are each independently hydrogen, deuterium, substituted or unsubstituted C1 to C10 alkyl group, It is a cyano group or a cyano-containing group,
* is the point connected to Chemical Formula 1. In paragraph 1:
The compound has a maximum absorption wavelength (λ _max ) in the wavelength range of 530 nm to 555 nm in the thin film state. In paragraph 1:
The compound exhibits an absorption curve with a full width at half maximum (FWHM) of 50 nm to 150 nm in a thin film state. In paragraph 1:
A compound represented by Formula 1 has a sublimation temperature of 280°C or lower. A first electrode and a second electrode facing each other, and
It includes a light absorption layer located between the first electrode and the second electrode,
An optoelectronic device, wherein the light absorption layer includes a compound according to any one of claims 1 to 15. In paragraph 16:
The light absorption layer includes a p-type semiconductor and an n-type semiconductor,
The p-type semiconductor includes a compound represented by Formula 1,
The n-type semiconductor includes fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or thiophene derivative, or a compound represented by the following formula (7),
[Formula 7]

In Formula 7 above,
^{X 5 and _} C3 to C30 heterocyclic group, halogen, or cyano group),
R ⁸¹ to R ⁸⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, or cyano group. or a combination thereof. A light absorption sensor comprising the photoelectric element according to claim 16. In paragraph 18:
A semiconductor substrate on which a plurality of first photo-sensing elements for detecting light in a blue wavelength region and a plurality of second photo-sensing elements for detecting light in a red wavelength region are integrated, and located on an upper part of the semiconductor substrate and having a green wavelength region. Includes a photoelectric element that detects light,
The photoelectric device is a photoelectric device according to claim 16,
Absorbance sensor. In paragraph 18:
It includes a structure in which a green photoelectric element for detecting light in a green wavelength range, a blue photoelectric element for detecting light in a blue wavelength range, and a red photoelectric element for detecting light in a red wavelength range are stacked,
The green photoelectric device is a photoelectric device according to claim 16,
Absorbance sensor. Board,
A light emitting device located on the substrate and including a light emitting layer, and
A light absorption sensor located on the substrate and including a light absorption layer arranged side by side with the light emitting layer along the surface direction of the substrate.
Including,
The light absorption layer absorbs light in the green wavelength spectrum,
The light absorption layer includes a compound according to any one of claims 1 to 15,
Display panel with built-in sensor. In paragraph 22:
The light emitting device includes first, second, and third light emitting devices that emit light of different wavelength spectra,
The light absorption sensor absorbs light emitted from at least one of the first, second, and third light emitting elements reflected by a recognition target and converts the light into an electrical signal. In paragraph 21:
The light-emitting device and the light absorption sensor each include a common electrode that applies a common voltage to the light-emitting device and the light absorption sensor,
The sensor-embedded display panel further includes a first common auxiliary layer continuously formed between the light-emitting element and the common electrode and between the light absorption layer and the common electrode.
Display panel with built-in sensor. In paragraph 23:
The difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the compound represented by Formula 1 is 1.2 eV or less,
Display panel with built-in sensor. In paragraph 21:
The sensor-embedded display panel further includes a second common auxiliary layer continuously formed between the light-emitting element and the substrate and between the light absorption layer and the substrate,
Display panel with built-in sensor. In paragraph 21:
The light emitting device includes first, second, and third light emitting devices that emit any one of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum,
The light absorption layer absorbs light of the same wavelength spectrum as the light emitted from at least one of the first, second, and third light emitting devices.
Display panel with built-in sensor. In paragraph 21:
The sensor-embedded display panel is
a display area that displays color, and
Non-display area excluding the above display area
Including,
The light absorption sensor is located in the non-display area,
Display panel with built-in sensor. In paragraph 21:
The display area is
A plurality of first sub-pixels displaying red and including the first light-emitting element,
a plurality of second sub-pixels that display green and include the second light-emitting element, and
A plurality of third sub-pixels that display blue and include the third light-emitting element
Including,
The light absorption sensor is located between at least two selected from the first subpixel, the second subpixel, and the third subpixel,
Display panel with built-in sensor. In paragraph 21:
The light absorption layer includes a p-type semiconductor and an n-type semiconductor.
The p-type semiconductor includes a compound according to any one of claims 1 to 15,
The n-type semiconductor includes fullerene, fullerene derivative, subphthalocyanine or subphthalocyanine derivative, thiophene or thiophene derivative, or a compound represented by the following formula (7),
Display panel with built-in sensor.
[Formula 7]

In Formula 7 above,
^{X 5 and _} C3 to C30 heterocyclic group, halogen, or cyano group),
R ⁸¹ to R ⁸⁴ are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, or cyano group. or a combination thereof. An electronic device comprising an optoelectronic device according to claim 16. An electronic device comprising the light absorption sensor according to claim 18. An electronic device comprising a sensor-embedded display panel according to claim 21.