KR20230079300A - Organic compound and sensor and sensor embedded display panel and electronic device - Google Patents

Abstract

The present invention relates to an organic compound represented by chemical formula 1, a sensor containing the organic compound, a sensor-embedded display panel, and an electronic device. In the chemical formula 1, D, A^1, A^2, R^1, and R^2 are each represented in the specification.

Description

Organic compound, sensor, sensor embedded display panel and electronic device

It relates to organic compounds, sensors, sensor-embedded display panels, and electronic devices.

Recently, there is an increasing demand for a display device implementing a biometric recognition technology for authenticating a person by extracting specific biometric information or behavioral characteristic information of a person centering on finance, health care, and mobile. Accordingly, the display device may include a sensor for biometric recognition.

Meanwhile, sensors for biometric recognition may be divided into electrostatic, ultrasonic, or optical sensors. Among them, an optical sensor is a sensor that absorbs light and converts it into an electrical signal, and organic materials not only have a high extinction coefficient but also can selectively absorb light in a specific wavelength range according to their molecular structure, so they can be usefully applied to optical sensors. .

A sensor included in the display device may be disposed under the display panel or manufactured as a separate module and mounted outside the display panel. However, when the sensor is placed under the display panel, performance may be degraded because an object must be recognized by passing through the display panel, various films and/or parts, etc., and when the sensor is manufactured and mounted as a separate module, design and usability are improved. There are limitations in terms of Accordingly, a built-in sensor in which the sensor is embedded in the display panel may be proposed, but since the display panel and the sensor have different required performance and physical properties, it is difficult to implement them in an integrated form.

One embodiment provides an organic compound that can be effectively applied to a sensor.

Another embodiment provides a sensor including the organic compound.

Another embodiment provides a sensor-embedded display panel including the organic compound or the sensor.

Another embodiment provides an electronic device including the organic compound, the sensor, or the sensor-embedded display panel.

According to one embodiment, an organic compound represented by Chemical Formula 1 is provided.

[Formula 1]

In Formula 1,

D is a substituted or unsubstituted divalent condensed polycyclic aromatic group,

A ¹ and A ² are each independently C=X ¹ , a ring group including a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof; A substituted or unsubstituted dicyanovinyl group; or a combination thereof, wherein X ¹ is O, S, Se, Te or CR ^a R ^b , R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, A dicyanovinyl group or a combination thereof,

R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof;

However, a structure in which D is pyrenylene and A ¹ and A ² are each independently an indenyl group including C=X ¹ is excluded.

D may be one of the substituted or unsubstituted divalent condensed polycyclic aromatic groups listed in Group 1 below.

[Group 1]

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

In the group 1 above,

Two of the carbons constituting each condensed polycyclic aromatic group are connecting points with Formula 1 above.

A ¹ and A ² may each independently be a cyclic group represented by Formula 1A, 1B or 1C, or a substituted or unsubstituted dicyanovinyl group.

[Formula 1A] [Formula 1B] [Formula 1C]

In Formulas 1A to 1C,

Ar ¹ is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or these is a fused ring of

Z ¹ and Z ² are each independently O, S, Se, Te or CR ^a R ^b , wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, A dicyanovinyl group or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,

R ^c to R ^h are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof, and R ^c to R ^h are each independently present or two adjacent ones of R ^c to R ^h combine with each other to form a ring;

At least one of R ^c to R ^h is a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof;

* is a connection point with Formula 1 above.

A ¹ and A ² may each independently be represented by any one of Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10.

[Formula 1A-1] [Formula 1A-2]

[Formula 1A-3] [Formula 1A-4]

[Formula 1B-1] [Formula 1B-2]

[Formula 1B-3] [Formula 1B-4] [Formula 1B-5]

[Formula 1B-6] [Formula 1B-7] [Formula 1B-8]

[Formula 1B-9] [Formula 1B-10]

In Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10,

Z ¹ , Z ² and Z ⁴ are each independently O, S, Se, Te or CR ^a R ^b , wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, A cyano group, a dicyanovinyl group, or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,

Z ³ is N or CR ⁱ ;

G ¹ to G ³ are each independently O, S, Se or Te;

R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof, and R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ combine with each other to form a ring,

n1 to n5 are each independently an integer of 0 to 2;

* is a connection point with Formula 1,

However, when D in Formula 1 is pyrenylene, A ¹ and A ² are not Formula 1A-2 or 1B-1, respectively.

A ¹ and A ² may each independently be represented by any one of Chemical Formulas 1A-1a to 1B-10a.

[Formula 1A-1a] [Formula 1A-2a]

[Formula 1A-3a] [Formula 1A-3b] [Formula 1A-4a]

[Formula 1B-1a] [Formula 1B-1b]

[Formula 1B-1c] [Formula 1B-1d]

[Formula 1B-1e] [Formula 1B-1f]

[Formula 1B-2a] [Formula 1B-2b]

[Formula 1B-2c] [Formula 1B-2d] [Formula 1B-2e]

[Formula 1B-2f] [Formula 1B-2g] [Formula 1B-2h]

[Formula 1B-3a] [Formula 1B-3b] [Formula 1B-3c]

[Formula 1B-3d] [Formula 1B-3e] [Formula 1B-3f]

[Formula 1B-3g] [Formula 1B-3h] [Formula 1B-4a]

[Formula 1B-5a] [Formula 1B-6a] [Formula 1B-6b]

[Formula 1B-6c] [Formula 1B-7a] [Formula 1B-7b]

[Formula 1B-8a] [Formula 1B-9a] [Formula 1B-10a]

In Formulas 1A-1a to 1B-10a,

R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof;

R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ bond to each other to form a ring;

* is a connection point with Formula 1,

However, when D in Chemical Formula 1 is pyrenylene, A ¹ and A ² are represented by Chemical Formulas 1A-1a, 1A-2a, 1B-1a, 1B-1b, 1B-1c, 1B-1d, 1B-1e or 1B-1f, respectively. It's not.

When thermogravimetric analysis is performed at 10 Pa or less, a temperature at which a weight reduction of 10% compared to the initial weight of the organic compound occurs may be about 400°C or less.

The organic compound may have a LUMO energy level of about 2.5 to 4.0 eV.

According to another embodiment, a film containing the organic compound is provided.

According to another embodiment, a sensor including a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode and including the organic compound is provided.

The organic compound may be an n-type semiconductor, and the photoelectric conversion layer may further include a p-type semiconductor forming a pn junction with the organic compound. The p-type semiconductor may be represented by Chemical Formula 2 below.

[Formula 2]

In Formula 2,

X ² is O, S, Se or Te;

Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,

R ^1a to R ^3a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof;

Ar ^1a , Ar ^2a , R ^1a and R ^2a may each independently exist or two adjacent ones may bond to each other to form a ring.

The p-type semiconductor may be represented by Chemical Formula 2A or 2B.

[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,

X ² is O, S, Se or Te;

Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,

L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^k R ^l , SiR ^m R ⁿ , GeR ^o R ^p , NR ^q , substituted or unsubstituted C1 to C30 alkyl A rene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;

R ^1a , R ^2a , R ^3a and R ^k to R ^q are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C1 to C30 alkyl group. A thio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof.

According to another embodiment, a substrate, a light emitting element located on the substrate and including a light emitting layer, and a light absorption sensor located on the substrate and including a photoelectric conversion layer, wherein the light emitting element and the light absorption sensor are disposed in a direction of the surface of the substrate are arranged side by side along, and the photoelectric conversion layer provides a sensor-embedded display panel including the organic compound.

The organic compound may be an n-type semiconductor, and the photoelectric conversion layer may further include a p-type semiconductor forming a pn junction with the organic compound, and the p-type semiconductor may be represented by Chemical Formula 2 above.

The p-type semiconductor may be represented by Chemical Formula 2A or 2B.

The light emitting device may include first, second, and third light emitting devices emitting light of different wavelength spectrums, and the light absorption sensor is configured to detect light emitted from at least one of the first, second, and third light emitting devices. The light may absorb light reflected by the recognition target and convert it into an electrical signal.

The light emitting element and the light absorption sensor may each include a common electrode for applying a common voltage to the light emitting element and the light absorption sensor, and the sensor-embedded display panel may include between the light emitting element and the common electrode and between the light absorption sensor and the light absorption sensor. A first common auxiliary layer continuously formed between the common electrodes may be further included.

A difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the organic compound may be 0 to about 1.2 eV.

The sensor embedded display panel may further include a second common auxiliary layer continuously formed between the light emitting element and the substrate and between the light absorption sensor and the substrate.

The display panel with a built-in sensor may include a display area displaying colors and a non-display area excluding the display area, and the light absorption sensor may be positioned in the non-display area.

The light emitting element may include a first light emitting element emitting light of a red wavelength spectrum, a second light emitting element emitting light of a green wavelength spectrum, and a third light emitting element emitting light of a blue light emitting spectrum, wherein the display The area includes a plurality of first sub-pixels displaying red and including the first light-emitting elements, a plurality of second sub-pixels displaying green and including the second light-emitting elements, and displaying blue and including the third light-emitting elements. It may include a plurality of third sub-pixels including, and the light absorption sensor may be located between at least two selected from the first sub-pixel, the second sub-pixel and the third sub-pixel.

According to another embodiment, an electronic device including the film, the sensor, or the sensor-embedded display panel is provided.

By having good electrical and thermal characteristics, it can be effectively applied to sensors and sensor-embedded display panels.

1 is a cross-sectional view showing an example of a sensor according to an embodiment,
2 is a plan view illustrating an example of an image sensor according to an exemplary embodiment;
3 is a cross-sectional view showing an example of the image sensor of FIG. 2;
4 is a cross-sectional view showing another example of the image sensor of FIG. 2;
5 is a plan view illustrating another example of an image sensor according to an exemplary embodiment;
6 is a cross-sectional view showing an example of the image sensor of FIG. 5;
7 is a plan view illustrating another example of an image sensor according to an exemplary embodiment;
8 is a cross-sectional view showing an example of the image sensor of FIG. 7;
9 is a plan view illustrating an example of a display panel with a built-in sensor according to an exemplary embodiment;
10 is a cross-sectional view showing an example of a display panel with a built-in sensor according to an exemplary embodiment;
11 is a cross-sectional view showing another example of a display panel with a built-in sensor according to an exemplary embodiment;
12 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an example;
13 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to an embodiment.

Hereinafter, embodiments will be described in detail so that those skilled in the art can easily implement them. However, a structure actually applied may be implemented in many different forms and is not limited to the implementation described herein.

In the drawings, the thickness is shown enlarged to clearly express the various layers and regions. When a part such as a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between.

In order to clearly describe this embodiment in the drawings, parts irrelevant to the description are omitted, and the same reference numerals are used for the same or similar components throughout the specification.

Hereinafter, the terms 'lower' and 'upper' are only for convenience of description and do not limit the positional relationship.

Unless otherwise defined below, 'substituted' means that a hydrogen atom in a compound is a halogen, a hydroxyl group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carba wheat, thiol group, ester group, carboxyl group or its salt, sulfonic acid group or its salt thereof, phosphoric acid or its salt thereof, C1 to C30 alkyl group, C2 to C30 alkenyl group, C2 to C30 alkynyl group, C6 to C30 aryl group, C7 to C30 aryl Alkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heterocyclic group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to C15 cycloalkynyl group, C3 to C30 It means substituted with a substituent selected from a C30 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined below, 'hetero' means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si and P.

Unless otherwise defined below, "alkyl group" is a straight-chain or branched-chain, saturated, monovalent hydrocarbon group (eg methyl group, ethyl group, propyl group, isobutyl group, sec-butyl group, tert-butyl group, pen ethyl group, iso-amyl group, hexyl group, etc.).

Unless otherwise defined below, "alkenyl group" means a straight-chain or branched-chain, saturated, monovalent hydrocarbon group (eg ethenyl group) having at least one carbon-carbon double bond.

Unless otherwise defined below, “alkoxy group” refers to an alkyl group linked through oxygen, for example, methoxy, ethoxy, and sec-butyloxy groups.

Unless otherwise defined below, "aryl group" means a monovalent functional group formed by removing hydrogen atoms present in one or more rings of an arene, for example, phenyl or naphthyl. The arene is a hydrocarbon group having an aromatic ring, and includes monocyclic and multicyclic hydrocarbon groups, and the additional ring of the multicyclic hydrocarbon group may be an aromatic ring or a non-aromatic ring.

Unless otherwise defined below, "heterocyclic group" is a superordinate concept of heteroaryl group, and N, O, S, Se, Te in a ring such as an aryl group, a cycloalkyl group, a fused ring thereof, or a combination thereof , P and at least one heteroatom selected from Si, and the others are carbon. When the heterocyclic group is a fused ring, the entire heterocyclic group or each ring may include one or more heteroatoms.

Unless otherwise defined below, "aromatic ring" means a functional group in which all elements of a functional group in the form of a ring have p-orbitals, and these p-orbitals form conjugation. For example, the aromatic ring may be a C6 to C30 aryl group.

Hereinafter, unless otherwise defined, an energy level is a highest occupied molecular orbital (HOMO) energy level or a lowest unoccupied molecular orbital (LUMO) energy level.

In the following, unless otherwise defined, a work function or energy level is expressed as an absolute value from a vacuum level. In addition, that the work function or energy level is deep, high, or large means that the absolute value is large with the vacuum level set to '0eV', and that the work function or energy level is shallow, low, or small with the vacuum level set to '0eV'. means a small value. Also, the difference in work function and/or energy level may be a value obtained by subtracting a small absolute value from a large absolute value.

Unless otherwise defined below, the HOMO energy level is the amount of photoelectrons emitted according to the energy when a thin film is irradiated with UV light using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). can be evaluated

Unless otherwise defined below, the LUMO energy level is obtained by obtaining the bandgap energy using a UV-Vis spectrometer (Shimadzu Corporation), and then calculating the LUMO energy level from the bandgap energy and the previously measured HOMO energy level. can

Hereinafter, an organic compound according to an embodiment will be described.

The organic compound according to one embodiment may have an A-D-A structure in which an electron donating group (D) and an electron accepting group (A) are disposed on both sides of the electron donating group.

For example, the organic compound may be represented by Formula 1 below.

[Formula 1]

In Formula 1,

D is a substituted or unsubstituted divalent fused polycyclic aromatic hydrocarbon group,

A ¹ and A ² are each independently C=X ¹ , a ring group including a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof; A substituted or unsubstituted dicyanovinyl group; or a combination thereof, wherein X ¹ is O, S, Se, Te or CR ^a R ^b , R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, A dicyanovinyl group or a combination thereof,

R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof.

However, a structure in which the condensed polycyclic aromatic hydrocarbon group (D) is pyrenylene and A ¹ and A ² are each independently an indenyl group including C=X ¹ may be excluded from the range of organic compounds. there is. For example, when D in Chemical Formula 1 is pyrenylene, A ¹ and A ² are each not an indenyl group including C=X ¹ . For example, when D in Chemical Formula 1 is pyrenylene, A ¹ and A ² are each a ring group not containing an indenyl group including C=X ¹ ; a ring group including a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof; A substituted or unsubstituted dicyanovinyl group; or a combination thereof, where X ¹ is as described above. For example, when D in Formula 1 is pyrenylene, A ¹ and A ² are each a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a ring group including a combination thereof; A substituted or unsubstituted dicyanovinyl group; or a combination thereof, where X ¹ is as described above.

The organic compound represented by Chemical Formula 1 is a condensed polycyclic aromatic compound including, as a core, a polycyclic aromatic hydrocarbon ring in which two or more rings are fused. The condensed polycyclic aromatic hydrocarbon group may have two or more rings fused, for example, two, three or four rings may be fused.

For example, the condensed polycyclic aromatic hydrocarbon group (D) may be one of the substituted or unsubstituted divalent condensed polycyclic aromatic hydrocarbon groups listed in Group 1 below, but is not limited thereto.

[Group 1]

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

,

In the group 1 above,

Two of the carbons constituting each condensed polycyclic aromatic hydrocarbon group are connecting points with Formula 1 above.

For example, at least one hydrogen of each condensed polycyclic aromatic hydrocarbon group listed in Group 1 may be substituted with a monovalent organic group, and the monovalent organic group is, for example, a substituted or unsubstituted C1 to C30 alkyl group, or a substituted or unsubstituted C2 to C30 alkyl group. A C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, It may be a carbonyl group, a carboxyl group, an ester group, a halogen (F, Cl, Br or I), a cyano group, or a combination thereof, but is not limited thereto.

For example, the condensed polycyclic aromatic hydrocarbon group (D) may be a substituted or unsubstituted naphthylene group, a substituted or unsubstituted anthracenylene group, a substituted or unsubstituted phenanthrenylene group, or a substituted or unsubstituted tetracenylene group. there is.

For example, A ¹ and A ² are electron acceptors having electron accepting characteristics, and may be the same as or different from each other. A ¹ and A ² may be bonded to one of the rings constituting the condensed polycyclic aromatic hydrocarbon group or may be bonded to different rings.

For example, A ¹ and A ² may each independently be a cyclic group including C=X ¹ (X ¹ is O, S, Se, Te or CR ^a R ^b , and R ^a and R ^b are as described above). Yes, for example C=O, C=S, C=Se, C=Te, C=CH(CN), C=C(CN) ₂ , 1,3-dioxoidane (1,3-dioxoindane) or It may be a cyclic group including a combination thereof. The ring group is, for example, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or these It may be a fused ring of, for example, a substituted or unsubstituted five-membered ring, a substituted or unsubstituted six-membered ring, or a fused ring thereof.

For example, A ¹ and A ² may each independently be a ring group including F, Cl, Br, I, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof. The ring group is, for example, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or these It may be a fused ring of, for example, a substituted or unsubstituted five-membered ring, a substituted or unsubstituted six-membered ring, or a fused ring thereof.

For example, A ¹ and A ² may each independently represent a substituted or unsubstituted dicyanovinyl group.

For example, A ¹ and A ² may each independently be a cyclic group or a substituted or unsubstituted dicyanovinyl group represented by Formula 1A, 1B or 1C.

[Formula 1A] [Formula 1B] [Formula 1C]

In Formulas 1A to 1C,

Ar ¹ is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or these is a fused ring of

Z ¹ and Z ² are each independently O, S, Se, Te or CR ^a R ^b (X ¹ is O, S, Se, Te or CR ^a R ^b ), wherein R ^a and R ^b are each independently Hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, a dicyanovinyl group, or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,

R ^c to R ^h are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof, and R ^c to R ^h are each independently present or two adjacent ones of R ^c to R ^h combine with each other to form a ring;

At least one of R ^c to R ^h is a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof;

* is a connection point with Formula 1 above.

For example, A ¹ and A ² may each independently be represented by any one of Chemical Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10.

[Formula 1A-1] [Formula 1A-2]

[Formula 1A-3] [Formula 1A-4]

[Formula 1A-1] [Formula 1A-2] [Formula 1A-3]

[Formula 1B-1] [Formula 1B-2]

[Formula 1B-3] [Formula 1B-4] [Formula 1B-5]

[Formula 1B-6] [Formula 1B-7] [Formula 1B-8]

[Formula 1B-9] [Formula 1B-10]

In Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10,

Z ¹ , Z ² and Z ⁴ are each independently O, S, Se, Te or CR ^a R ^b , wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, A cyano group, a dicyanovinyl group, or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,

Z ³ is N or CR ⁱ ;

G ¹ to G ³ are each independently O, S, Se or Te;

R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof, and R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ combine with each other to form a ring,

n1 to n5 are each independently an integer of 0 to 2;

* is a connection point with Formula 1 above.

However, when the condensed polycyclic aromatic hydrocarbon group (D) is pyrenylene, A ¹ and A ² may not be of Chemical Formula 1A-2 or 1B-1, respectively. For example, when the condensed polycyclic aromatic hydrocarbon group (D) is pyrenylene, A ¹ and A ² may be represented by 1B-5, 1B-6, 1B-7, 1B-8, 1B-9 or 1B-10, respectively.

For example, Z ¹ , Z ² and Z ⁴ may each independently be O, S, Se, Te, CH(CN), C(CN) ₂ , 1,3-dioxoidane or a combination thereof.

For example, in Formula 1A-3, Z ¹ and Z ⁴ may be the same as or different from each other, for example, one of Z ¹ and Z ⁴ may be O and the other may be S, Se, Te, CH(CN) or It may be C(CN) ₂ .

For example, in Formula 1A-4, Z ¹ and Z ⁴ may be the same as or different from each other. For example, Z ¹ and Z ⁴ may be the same as each other, and each may be O. For example, Z ¹ and Z ⁴ may be the same as each other, and each may be S. For example, Z ¹ and Z ⁴ may be different from each other, and one of Z ¹ and Z ⁴ may be O and the other may be S.

For example, in Chemical Formulas 1B-1 to 1B-10, Z ¹ and Z ² may be the same as or different from each other. For example, Z ¹ and Z ² may be the same as each other, and each may be O. For example, Z ¹ and Z ² may be equal to each other, and each may be S. For example, Z ¹ and Z ² may be different from each other, and one of Z ¹ and Z ² may be O and the other may be S, Se, Te, CH(CN) or C(CN) ₂ .

For example, in Chemical Formulas 1B-6, 1B-7, or 1B-9, Z ¹ , Z ² and Z ⁴ may be the same as or different from each other. For example, Z ¹ , Z ² and Z ⁴ may be the same as each other, and each may be O. For example, Z ¹ , Z ² and Z ⁴ may be the same as each other, and each may be S. For example, Z ¹ , Z ² and Z ⁴ may be different from each other, and any two of Z ¹ , Z ² and Z ⁴ may be O and the other may be S, Se, Te, CH(CN) or C(CN) ₂ can be

For example, Z ³ may be N or CH.

For example, G ¹ to G ³ may each independently be O or S.

For example, R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ may each independently be hydrogen, a methyl group, an ethyl group, a propyl group, a phenyl group, a halogen group, a cyano group, or a combination thereof.

For example, n1 to n5 may each independently be 0 or 1.

For example, A ¹ and A ² may each independently be represented by any one of Chemical Formulas 1A-1a to 1B-10a.

[Formula 1A-1a] [Formula 1A-2a]

[Formula 1A-3a] [Formula 1A-3b] [Formula 1A-4a]

[Formula 1B-1a] [Formula 1B-1b]

[Formula 1B-1c] [Formula 1B-1d]

[Formula 1B-1e] [Formula 1B-1f]

[Formula 1B-2a] [Formula 1B-2b]

[Formula 1B-2c] [Formula 1B-2d] [Formula 1B-2e]

[Formula 1B-2f] [Formula 1B-2g] [Formula 1B-2h]

[Formula 1B-3a] [Formula 1B-3b] [Formula 1B-3c]

[Formula 1B-3d] [Formula 1B-3e] [Formula 1B-3f]

[Formula 1B-3g] [Formula 1B-3h] [Formula 1B-4a]

[Formula 1B-5a] [Formula 1B-6a] [Formula 1B-6b]

[Formula 1B-6c] [Formula 1B-7a] [Formula 1B-7b]

[Formula 1B-8a] [Formula 1B-9a] [Formula 1B-10a]

In Formulas 1A-1a to 1B-10a,

R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof;

R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ bond to each other to form a ring;

* is a connection point with Formula 1 above.

However, when the condensed polycyclic aromatic hydrocarbon group (D) is pyrenylene, A ¹ and A ² are represented by the formulas 1A-1a, 1A-2a, 1B-1a, 1B-1b, 1B-1c, 1B-1d, 1B- It may not be 1e or 1B-1f. For example, when the condensed polycyclic aromatic hydrocarbon group (D) is pyrenylene, A ¹ and A ² are represented by Chemical Formulas 1B-5a, 1B-6a, 1B-6b, 1B-6c, 1B-7a, 1B-7b, and 1B-8a, respectively. , 1B-9a or 1B-10a.

For example, R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ may each independently be hydrogen, a methyl group, an ethyl group, a propyl group, a phenyl group, a halogen group, a cyano group, or a combination thereof.

For example, the organic compound may be one of the compounds listed in Group 2 below, but is not limited thereto.

[Group 2]

In the group 2 above,

R ⁵⁰ to R ⁵⁵ , R', R", R"' and R"" are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, or a substituted or unsubstituted C1 to C30 alkenyl group. a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof And, R ⁵⁰ to R ⁵⁵ may each independently exist or two adjacent ones of R ⁵¹ to R ⁵⁵ may be bonded to each other to form a ring.

The organic compound may have semiconductor properties by having an electron-donating group and an electron-accepting group having the above structure, and may be used as an n-type semiconductor, for example. For example, the LUMO energy level of the organic compound may be about 2.5 eV to 4.0 eV (based on absolute value), and within the above range, it may be about 2.6 eV to 4.0 eV, about 2.7 eV to 4.0 eV, or about 2.8 eV to 3.9 eV. there is. For example, the band gap energy of the organic compound may be about 2.0 eV to 3.5 eV, and may be about 2.2 to 3.3 eV within the above range.

The organic compound may be a material that can be vacuum deposited, for example, a sublimable material that can be vacuum deposited by sublimation without decomposition or polymerization in a predetermined temperature range. A sublimable material can be identified by thermogravimetric analysis (TGA) and is an organic material that undergoes weight loss with increasing temperature and exhibits a weight loss of at least about 50% relative to the initial weight without substantial decomposition or polymerization. can

For example, the organic compound is subjected to thermogravimetric analysis at a pressure of about 10 Pa or less (eg, 0 Pa to about 10 Pa, about 0.01 Pa to 10 Pa, or about 0.1 Pa to 10 Pa) at a temperature at which a weight loss of 10% compared to the initial weight occurs (hereinafter referred to as 'sublimation temperature'). ') may be within a predetermined range. For example, the sublimation temperature of the organic compound may be about 400 ° C or less, and within the above range, about 390 ° C or less, about 380 ° C or less, about 370 ° C or less, about 360 ° C or less, about 350 ° C or less, about 340 ° C or less, about 330 ° C or less, about 320 ° C or less, about 310 ° C or less, about 300 ° C or less, about 290 ° C or less, about 280 ° C or less, about 270 ° C or less or about 250 ° C or less, about 100 ° C to 400 ° C, about 100 °C to 390 °C, about 100 °C to 380 °C, about 100 °C to 370 °C, about 100 °C to 360 °C, about 100 °C to 350 °C, about 100 °C to 340 °C, about 100 °C to 330 °C, about 100 °C to 320°C, about 100°C to 310°C, about 100°C to 300°C, about 100°C to 290°C, about 100°C to 280°C, about 100°C to 270°C, about 100°C to 250°C, about 150°C to 400 ° C, about 150 ° C to 400 ° C, about 150 ° C to 380 ° C, about 150 ° C to 370 ° C, about 150 ° C to 360 ° C, about 150 ° C to 350 ° C, about 150 ° C to 340 ° C, about 150 ° C to 330 ° C °C, about 150 °C to 320 °C, about 150 °C to 310 °C, about 150 °C to 300 °C, about 150 °C to 290 °C, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150 °C to 250 °C can be

The organic compound may be applied to various devices due to the above-described electrical and thermal characteristics.

For example, the organic compound may be applied to a sensor. The sensor may be a light absorption sensor capable of receiving light and converting it into an electrical signal. The sensor may be an organic sensor including an organic material as a photoelectric conversion material.

1 is a cross-sectional view showing an example of a sensor according to an embodiment.

Referring to FIG. 1 , a sensor 100 according to an embodiment includes a first electrode 110, a second electrode 120, a photoelectric conversion layer 130, and optionally auxiliary layers 140 and 150.

A substrate (not shown) may be disposed below the first electrode 110 or above the second electrode 120 . The substrate may be, for example, an inorganic substrate such as a glass plate, a silicon wafer, or an organic substrate made of an organic material such as polycarbonate, polymethylmethacrylate, polyethyleneterephthalate, polyethylenenaphthalate, polyamide, polyethersulfone, or combinations thereof. . The substrate may be omitted.

The substrate may be, for example, a semiconductor substrate or a silicon substrate. The semiconductor substrate may include circuitry (not shown), and the circuitry may include transfer transistors (not shown) and/or charge storage (not shown) integrated in the semiconductor substrate. The circuit unit may be electrically connected to the first electrode 110 or the second electrode 120 .

One of the first electrode 110 and the second electrode 120 may be an anode and the other may be a cathode. For example, the first electrode 110 may be an anode and the second electrode 120 may be a cathode. For example, the first electrode 110 may be a cathode and the second electrode 120 may be an anode.

At least one of the first electrode 110 and the second electrode 120 may be a light-transmitting electrode. The light-transmitting electrode may be a transparent electrode or a semi-transmissive electrode, the transparent electrode may have a transmittance of about 85% or more, about 90% or more, or about 95% or more, and the transflective electrode may have a light transmittance of about 30% or more and less than about 85%, or about 40% or more. % to about 80% or about 40% to 75% light transmittance. The transparent electrode and the transflective electrode may include, for example, at least one of an oxide conductor, a carbon conductor, and a metal thin film. Oxide conductors include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO) and aluminum. It may be at least one selected from zinc oxide (Aluminum zinc oxide, AZO), the carbon conductor may be at least one selected from graphene and carbon nano-body, and the metal thin film may be aluminum (Al), magnesium (Mg), silver (Ag) , gold (Au), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), an alloy thereof, or a combination thereof.

Any one of the first electrode 110 and the second electrode 120 may be a reflective electrode. The reflective electrode may include a reflective layer having a light transmittance of about 5% or less and/or a reflectance of about 80% or more, and the reflective layer may include an optically opaque material. The optically opaque material may include a metal, a metal nitride, or a combination thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr) , nickel (Ni), an alloy thereof, a nitride thereof (eg TiN), or a combination thereof, but is not limited thereto. The reflective electrode may be formed of a reflective layer or may have a reflective layer/light-transmitting layer or a laminated structure of a light-transmitting layer/reflective layer/light-transmitting layer, and the reflective layer may have one layer or two or more layers.

For example, each of the first electrode 110 and the second electrode 120 may be a light transmitting electrode, and either one of the first electrode 110 or the second electrode 120 is a light receiving electrode positioned on a light receiving side. (light-receiving electrode).

For example, the first electrode 110 may be a light transmitting electrode, the second electrode 120 may be a reflective electrode, and the first electrode 110 may be a light receiving electrode.

For example, the first electrode 110 may be a reflective electrode, the second electrode 120 may be a light transmitting electrode, and the second electrode 120 may be a light receiving electrode.

The photoelectric conversion layer 130 is positioned between the first electrode 110 and the second electrode 120, and can absorb light in at least a portion of the wavelength range and convert it into an electrical signal. For example, light in the blue wavelength range (hereinafter referred to as ' referred to as 'blue light'), light in the green wavelength range (hereinafter referred to as 'green light'), light in the red wavelength range (hereinafter referred to as 'red light'), and light in the infrared wavelength range (hereinafter referred to as 'infrared light') ), at least some of which may be converted into electrical signals.

For example, the photoelectric conversion layer 130 may selectively absorb any one of blue light, green light, red light, and infrared light and convert it into an electrical signal. Here, selectively absorbing any one of blue light, green light, red light, and infrared light means that the maximum absorption wavelength (λ _max ) of the absorption spectrum is about 380 nm or more and less than 500 nm, about 500 nm to 600 nm, about 600 nm or more and about 700 nm or less. It means that it exists in any one of the wavelength range from more than 700 nm to less than 3000 nm, and the absorption spectrum in the wavelength range is significantly higher than the absorption spectrum in other wavelength ranges, and here, remarkably high refers to, for example, about 70 % to 100%, about 75% to 100%, about 80% to 100%, about 85% to 100%, about 90% to 100%, or about 95% to 100% may belong to the corresponding wavelength region.

The photoelectric conversion layer 130 may include at least one p-type semiconductor and at least one n-type semiconductor for photoelectric conversion of absorbed light. A p-type semiconductor and an n-type semiconductor may form a pn junction, and after receiving light from the outside to generate excitons, the generated excitons may be separated into holes and electrons.

At least one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material, and for example, each of the p-type semiconductor and the n-type semiconductor may be a light absorbing material. For example, at least one of a p-type semiconductor and an n-type semiconductor may be an organic material. For example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective light absorbing material that selectively absorbs light in a predetermined wavelength region, and for example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective organic light-absorbing material. can The p-type semiconductor and the n-type semiconductor may have maximum absorption wavelengths (λ _max ) in the same or different wavelength regions.

For example, at least one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material having a maximum absorption wavelength (λ _max ) in a wavelength range of about 380 nm to less than 500 nm, for example, a maximum absorption wavelength in a wavelength range of about 410 nm to 480 nm. (λ _max ) It may be an organic light absorbing material.

For example, at least one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material having a maximum absorption wavelength (λ _max ) in a wavelength range of about 500 nm to 600 nm, for example, a maximum absorption wavelength in a wavelength range of about 520 nm to 580 nm ( λ _max ) may be an organic light absorbing material.

For example, at least one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material having a maximum absorption wavelength (λ _max ) in a wavelength range of greater than about 600 nm and less than 700 nm, for example, a maximum absorption wavelength in a wavelength range of about 620 nm to 680 nm. (λ _max ) It may be an organic light absorbing material.

For example, the HOMO energy level of the p-type semiconductor may be about 5.0 to 6.0 eV, and may be about 5.1 to 5.9 eV, about 5.2 to 5.8 eV, or about 5.3 to 5.8 eV within the above range. For example, the LUMO energy level of the p-type semiconductor may be about 2.7 to 4.3 eV, and may be about 2.8 to 4.1 eV or about 3.0 to 4.0 eV within the above range. For example, the band gap energy of the p-type semiconductor may be about 1.7 to 2.3 eV, and may be about 1.8 to 2.2 eV or about 1.9 to 2.1 eV within the above range.

For example, a p-type semiconductor has a core structure including an electron donating moiety (EDM), a π-conjugated linking moiety (LM), and an electron accepting moiety (EAM). It may be an organic material having, for example, it may be represented by the following formula A.

[Formula A]

EDM - LM - EAM

In Formula A,

EDM can be an electron donating moiety;

EAM can be an electron accepting moiety,

LM may be a pi conjugated linking moiety connecting the electron donating moiety and the electron accepting moiety.

For example, a p-type semiconductor may be represented by Chemical Formula 2 below.

[Formula 2]

In Formula 2,

X ² is O, S, Se or Te;

Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,

R ^1a to R ^3a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof;

Ar ^1a , Ar ^2a , R ^1a and R ^2a may each independently exist or two adjacent ones may bond to each other to form a ring.

For example, Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, or a substituted or unsubstituted pyryl group. A pyridinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted que Nolinyl group, substituted or unsubstituted isoquinolinyl group, substituted or unsubstituted naphthyridinyl group, substituted or unsubstituted cinolinyl group, substituted or unsubstituted naphthyridinyl group A cyclic quinazolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted benzotriazinyl group, a substituted or unsubstituted pyridopyrazinyl group, It may be a substituted or unsubstituted pyridopyrimidinyl group or a substituted or unsubstituted pyridopyridazinyl group.

For example, Ar ^1a and Ar ^2a may be fused together to form a ring.

For example, Ar ^2a and R ^1a may be fused to each other to form a ring.

Specifically, the p-type semiconductor may be represented by Chemical Formula 2A or 2B.

[Formula 2A] Formula 2B]

In Formulas 2A and 2B,

X ² is O, S, Se or Te;

Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,

L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^k R ^l , SiR ^m R ⁿ , GeR ^o R ^p , NR ^q , substituted or unsubstituted C1 to C30 alkyl A rene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;

R ^1a , R ^2a , R ^3a and R ^k to R ^q are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C1 to C30 alkyl group. A thio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof.

For example, the p-type semiconductor may be selected from compounds listed in Groups 3A, 3B or 3C, but is not limited thereto.

[Group 3A]

In Group 3A, the hydrogen present in each aromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 aryl group, It may be substituted with a substituent selected from a C4 to C30 heteroaryl group, a halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and combinations thereof, R ^a , R ^b , R ^f , R ¹⁶ , R ¹⁷ , R ¹⁸ and R ²⁰ may each independently be hydrogen or a substituted or unsubstituted C1 to C6 alkyl group.

[Group 3B]

In Group 3B, the hydrogen present in each aromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 aryl group, It may be substituted with a substituent selected from a C4 to C30 heteroaryl group, a halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and combinations thereof, R ^1a , R ^1b , R ¹¹ and R ¹² may each independently be hydrogen or a C1 to C6 alkyl group.

[Group 3C]

In Group 3C, the hydrogen present in each aromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 aryl group, It may be substituted with a substituent selected from a C4 to C30 heteroaryl group, a halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and combinations thereof, R ^a , R ^b , R ^c , R ^d , R ¹⁶ and R ¹⁷ may each independently be hydrogen or a C1 to C6 alkyl group.

For example, the n-type semiconductor may include the organic compound described above, and a detailed description is as described above.

For example, the LUMO energy level of the n-type semiconductor may be about 2.5 to 4.0 eV, and may be about 2.6 eV to 4.0 eV, about 2.7 eV to 4.0 eV, or about 2.8 eV to 3.9 eV within the above range. For example, the HOMO energy level of the n-type semiconductor may be about 5.4 to 7.0 eV, and may be about 5.6 to 6.8 eV or about 5.8 to 6.7 eV within the above range. For example, the bandgap energy of the n-type semiconductor may be about 2.0 eV to 3.5 eV, and may be about 2.2 to 3.3 eV within the above range.

The p-type semiconductor and the n-type semiconductor may have similar thermal characteristics. For example, the difference between the sublimation temperatures of the p-type semiconductor and the n-type semiconductor may be about 150° C. or less, and within the above range, for example, about 130° C. or less, about 120° C. or less, about 110°C or less, about 100°C or less, about 90°C or less, about 80°C or less, about 70°C or less, about 60°C or less, about 50°C or less, about 40°C or less, about 30°C or less, about 20°C Or less, it may be about 15 ℃ or less or about 10 ℃ or less, within the above range 0 ℃ to about 150 ℃, 0 ℃ to about 130 ℃, 0 ℃ to about 120 ℃, 0 ℃ to about 110 ℃, 0 ℃ to about 100°C, 0°C to about 90°C, 0°C to about 80°C, 0°C to about 70°C, 0°C to about 60°C, 0°C to about 50°C, 0°C to about 40°C, 0°C to about 30°C °C, 0 °C to about 20 °C, 0 °C to about 15 °C, 0 °C to about 10 °C, about 2 °C to about 150 °C, about 2 °C to about 130 °C, about 2 °C to about 120 °C, about 2 °C to about 110 °C, about 2 °C to about 100 °C, about 2 °C to about 90 °C, about 2 °C to about 80 °C, 2 °C to about 70 °C, about 2 °C to about 60 °C, about 2 °C to about 50 °C °C, about 2 °C to about 40 °C, about 2 °C to about 30 °C, about 2 °C to about 20 °C, about 2 °C to about 15 °C or about 2 °C to 10 °C.

For example, the sublimation temperatures of the p-type semiconductor and the n-type semiconductor may be about 380 °C or less, respectively, and about 370 °C or less, about 360 °C or less, about 350 °C or less, about 340 °C or less, about 330 °C or less within the above range. , about 320 ° C or less, about 310 ° C or less, about 300 ° C or less, about 290 ° C or less, about 280 ° C or less, about 270 ° C or less or about 250 ° C or less, about 100 ° C to 380 ° C, about 100 ° C to 370 ° C °C, about 100 °C to 360 °C, about 100 °C to 350 °C, about 100 °C to 340 °C, about 100 °C to 330 °C, about 100 °C to 320 °C, about 100 °C to 310 °C, about 100 °C to 300 °C , about 100 ℃ to 290 ℃, about 100 ℃ to 280 ℃, about 100 ℃ to 270 ℃, about 100 ℃ to 250 ℃, about 150 ℃ to 380 ℃, about 150 ℃ to 370 ℃, about 150 ℃ to 360 ℃, About 150 ℃ to 350 ℃, about 150 ℃ to 340 ℃, about 150 ℃ to 330 ℃, about 150 ℃ to 320 ℃, about 150 ℃ to 310 ℃, about 150 ℃ to 300 ℃, about 150 ℃ to 290 ℃, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150 °C to 250 °C.

The photoelectric conversion layer 130 may be an intrinsic layer (I layer) in which a p-type semiconductor and an n-type semiconductor are mixed in a bulk heterojunction form. In this case, the p-type semiconductor and the n-type semiconductor may be mixed at a volume ratio (thickness ratio) of about 1:9 to 9:1, and within the above range, for example, at a volume ratio (thickness ratio) of about 2:8 to 8:2. It may be mixed in a volume ratio (thickness ratio) of, for example, about 3:7 to 7:3 within the above range, and may be mixed in a volume ratio (thickness ratio) of, for example, about 4:6 to 6:4 within the above range, Within the above range, for example, they may be mixed at a volume ratio (thickness ratio) of about 5:5.

The photoelectric conversion layer 130 may further include a p-type layer and/or an n-type layer in addition to the intrinsic layer. The p-type layer may include the aforementioned p-type semiconductor, and the n-type layer may include the aforementioned n-type semiconductor. For example, it may be included in various combinations such as p-type layer/I layer, I-layer/n-type layer, p-type layer/I layer/n-type layer, and the like.

The photoelectric conversion layer 130 may include a bi-layer including a p-type layer including the aforementioned p-type semiconductor and an n-type layer including the aforementioned n-type semiconductor. At this time, the thickness ratio of the p-type layer and the n-type layer may be about 1:9 to 9:1, and within the above range, for example, about 2:8 to 8:2, about 3:7 to 7:3, about 4:6 to 6:4 or about 5:5.

The photoelectric conversion layer 130 may have a thickness of about 10 nm to 500 nm, and may have a thickness of about 20 nm to 300 nm within the above range. By having a thickness within the above range, it is possible to effectively improve photoelectric conversion efficiency by effectively absorbing light and effectively separating and transferring holes and electrons.

The auxiliary layers 140 and 150 are positioned between the first auxiliary layer 140 positioned between the first electrode 110 and the photoelectric conversion layer 130 and between the second electrode 120 and the photoelectric conversion layer 130. A second auxiliary layer 150 is included. The first and second auxiliary layers 140 and 150 may independently be auxiliary charge layers that control the mobility of holes and/or electrons separated from the photoelectric conversion layer 130 or auxiliary light absorption layers that improve light absorption characteristics.

The first and second auxiliary layers 140 and 150 may each independently include an organic material, an inorganic material, and/or an inorganic material. The first and second auxiliary layers 140 and 150 may include, for example, a hole injecting layer (HIL), a hole transporting layer (HTL), an electron blocking layer (EBL), and an electron injection layer ( It may be at least one selected from an electron injecting layer (EIL), an electron transporting layer (ETL), a hole blocking layer (HBL), and a light absorption auxiliary layer, but is not limited thereto.

The hole injection layer, the hole transport layer and/or the electron blocking layer may be, for example, a phthalocyanine compound such as copper phthalocyanine; DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA (4,4' ,4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N, -(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT/PSS (Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)), PANI/DBSA (Polyaniline/Dodecylbenzenesulfonic acid), PANI/CSA( Polyaniline/Camphor sulfonicacid), PANI/PSS (Polyaniline/Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), containing triphenylamine Polyetherketone (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium [Tetrakis (pentafluorophenyl) borate], HAT-CN (dipyrazino [2,3-f: 2',3'-h] quinoxaline-2,3,6 ,7,10,11-hexacarbonitrile), carbazole-based derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene-based derivatives, TPD (N,N'-bis(3-methylphenyl)-N,N'- Triphenylamine derivatives such as diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPB (N,N' -di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC(4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD(4,4′ -Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto no.

The electron injection layer, the electron transport layer and/or the hole blocking layer may be a metal halide such as LiF, NaCl, CsF, RbCl and RbI; lanthanide metals such as Yb; metals such as calcium (Ca), potassium (K), aluminum (Al) or alloys thereof; metal oxides such as Li ₂ O and BaO; Liq (Lithium quinolate), Alq3 (Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'- (pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5 -Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl) -1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5 -diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2 -methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq ₂ (berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2) -yl)anthracene), BmPyPhB (1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), or a combination thereof, but is not limited thereto.

Any one of the first and second auxiliary layers 140 and 150 may be omitted. At least one of the first and second auxiliary layers 140 and 150 may have two or more layers.

The sensor 100 may further include an antireflection layer (not shown) positioned below the first electrode 110 or above the second electrode 120 . For example, when the first electrode 110 is a light receiving electrode, the antireflection layer may be positioned below the first electrode 110 . For example, when the second electrode 120 is a light receiving electrode, the antireflection layer may be positioned on the second electrode 120 . The antireflection layer may further improve light absorption by lowering reflectivity of incident light by being disposed on a side where light is incident. The antireflection layer may include, for example, a material having a refractive index of about 1.6 to about 2.5, and may include, for example, at least one of a metal oxide, a metal sulfide, and an organic material having a refractive index within the above range. The antireflection layer is, for example, an oxide containing aluminum, an oxide containing molybdenum, an oxide containing tungsten, an oxide containing vanadium, an oxide containing rhenium, an oxide containing niobium, an oxide containing tantalum, an oxide containing titanium, an oxide containing nickel, an oxide containing copper, an oxide containing cobalt, and an oxide containing manganese. metal oxides such as oxides, chromium-containing oxides, tellurium-containing oxides, or combinations thereof; metal sulfides such as zinc sulfide; Or organic materials such as amine derivatives may be included, but are not limited thereto.

The sensor 100 may further include a condensing lens (not shown). The condensing lens may converge the light to one point by controlling the direction of the incident light at the position where the light is incident. The condensing lens may have, for example, a cylindrical shape or a hemispherical shape, but is not limited thereto.

In the sensor 100, when light is incident from the first electrode 110 or the second electrode 120 and the photoelectric conversion layer 130 absorbs light in a predetermined wavelength range, excitons may be generated inside. Excitons are separated into holes and electrons in the photoelectric conversion layer 130, and the separated holes move toward the anode, which is one of the first electrode 110 and the second electrode 120, and the separated electrons move to the first electrode 110 and the second electrode 120 move toward the other one of the cathode, so that current can flow.

The sensor 100 may be included in, for example, an image sensor or a biometric sensor.

The image sensor may be, for example, a CMOS image sensor.

Biometric sensors include, for example, fingerprint sensors, iris recognition sensors, distance sensors, photoplethysmography (PPG) sensor devices, electroencephalogram (EEG) sensor devices, electrocardiogram (ECG) sensor devices, blood pressure (BP) ) sensor device, electromyography (EMG) sensor device, blood glucose (BG) sensor device, accelerometer device, RFID antenna device, inertial sensor device, activity sensor ) device, a strain sensor device, a motion sensor device, or a combination thereof, but is not limited thereto.

For example, the above-described sensor 100 may be included in an image sensor, and may be applied as an image sensor suitable for high-speed photography by reducing image afterimages caused by residual charges and having improved optical and electrical characteristics as described above.

Hereinafter, an image sensor according to an exemplary embodiment will be described.

FIG. 2 is a plan view illustrating an example of an image sensor according to an exemplary embodiment, and FIG. 3 is a cross-sectional view illustrating an example of the image sensor of FIG. 2 .

Referring to FIG. 2 , the image sensor 300 according to the present embodiment may be a multilayer sensor in which a semiconductor substrate 200 and the aforementioned sensor 100 are stacked, and the semiconductor substrate 200 overlaps the sensor 100. A first photodiode 220 and a second photodiode 230 are included. 2 illustrates an example of unit pixel groups repeated in the image sensor 300, and such unit pixel groups are repeatedly arranged along rows and/or columns. 2 illustrates a 2x2 array unit pixel group in which two red pixels R and two blue pixels B are arranged on the semiconductor substrate 200 as an example, but is not limited thereto.

The first photodiode 220 and the second photodiode 230 are integrated on the semiconductor substrate 200, respectively, and absorb light of different wavelength spectra filtered by a color filter layer 70 to be described later, thereby producing different wavelengths. Spectral light can be photoelectrically converted. A wavelength spectrum photoelectrically converted by the sensor 100 may be different from a wavelength spectrum photoelectrically converted by the first photodiode 220 and the second photodiode 230, respectively. The wavelength spectrum, the wavelength spectrum photoelectrically converted by the second photodiode 230, and the wavelength spectrum photoelectrically converted by the sensor 100 are different from each other and may be selected from light of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, respectively. For example, the first photodiode 220 can photoelectrically convert light of a red wavelength spectrum (R), the second photodiode 230 can photoelectrically convert light of a blue wavelength spectrum (B), and the sensor 100 Light of the green wavelength spectrum (G) may be photoelectrically converted.

Referring to FIG. 3 , an image sensor 300 according to an embodiment includes a substrate 200, a lower insulating layer 60, a color filter layer 70, an upper insulating layer 80, a sensor 100, and an encapsulation. Layer 380 is included.

The substrate 200 may be a semiconductor substrate, and the first and second photodiodes 220 and 230, a transfer transistor (not shown), and a charge storage 255 are integrated. The first or second photodiodes 220 and 230, the transfer transistor, and/or the charge storage 255 may be integrated for each pixel, and as shown in the figure, the first photodiode 220 is a red pixel (R ) and the second photodiode 230 may be included in the blue pixel (B). Charge storage 255 is electrically connected to sensor 100 .

Metal wires (not shown) and pads (not shown) are formed on or below the substrate 200 . The metal wires and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof to reduce signal delay, but are not limited thereto.

A lower insulating layer 60 is formed on the substrate 200 . The lower insulating layer 60 may be made of an inorganic insulating material such as silicon oxide and/or silicon nitride or a low K material such as SiC, SiCOH, SiCO, and SiOF. Bottom insulating layer 60 has trenches 85 exposing charge storage 255 . Trench 85 may be filled with a filler material.

A color filter layer 70 is formed on the lower insulating layer 60 . The color filter layer 70 includes a red filter 70a formed on the red pixel R and a blue filter 70b formed on the blue pixel B. However, it is not limited thereto, and a cyan filter, a magenta filter, and/or a yellow filter may be included instead of the red filter 70a and/or the blue filter 70b, or additionally included in addition to the red filter 70a and the blue filter 70b. there is. In this embodiment, an example without a green filter is described, but a green filter may be provided in some cases.

An upper insulating layer 80 is formed on the color filter layer 70 . The upper insulating layer 80 removes the level difference caused by the color filter layer 70 and flattens it. Upper insulating layer 80 and lower insulating layer 60 have contacts (not shown) exposing pads and trenches 85 exposing charge storage 255 .

The sensor 100 described above is formed on the upper insulating layer 80 . A detailed description of the sensor 100 is as described above. One of the first electrode 110 and the second electrode 120 of the sensor 100 may be electrically connected to the charge storage 255 and the first electrode 110 and the second electrode of the sensor 100 ( 120) may be a light receiving electrode. For example, the first electrode 110 of the sensor 100 may be electrically connected to the charge storage 255 and the second electrode 120 of the sensor 100 may be a light receiving electrode.

The encapsulation layer 380 may protect the image sensor 300 and may include one or two or more layers including an organic material, an inorganic material, an inorganic material, or a combination thereof. The encapsulation layer 380 may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic/inorganic film, or a combination thereof. The organic layer may include, for example, an acrylic resin, a (meth)acrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxide, nitride, and/or oxynitride, and may include, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, It may be titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or combinations thereof, but is not limited thereto. The organic/inorganic layer may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer 380 may have one layer or two or more layers. The encapsulation layer 380 may be omitted.

A condensing lens (not shown) may be further formed on the sensor 100 (or the encapsulation layer 380). The condensing lens can converge the light to one point by controlling the direction of the incident light. The condensing lens may have, for example, a cylindrical shape or a hemispherical shape, but is not limited thereto.

4 is a cross-sectional view showing another example of the image sensor of FIG. 2 .

Referring to FIG. 4 , the image sensor 300 according to an example integrates first and second photodiodes 220 and 230 , a transfer transistor (not shown), and a charge storage 255 as in the above-described embodiment. The substrate 200 being; an upper insulating layer 80; sensor 100; and an encapsulation layer 380 .

However, unlike the above-described embodiment, the image sensor 300 according to the present example has the first and second photodiodes 220 and 230 in a direction perpendicular to the surface direction of the substrate 200 (for example, the thickness of the substrate 200). direction) and the color filter layer 70 is omitted. The first and second photodiodes 220 and 230 are electrically connected to a charge storage (not shown) and may be transferred by a transfer transistor. The first and second photodiodes 220 and 230 may selectively absorb light of each wavelength region according to the stacking depth.

The sensor 100 is as described above. One of the first electrode 110 and the second electrode 120 of the sensor 100 may be a light receiving electrode and the other of the first electrode 110 and the second electrode 120 of the sensor 100 is a charge storage. (255) and may be electrically connected.

5 is a plan view illustrating another example of an image sensor according to an exemplary embodiment, and FIG. 6 is a cross-sectional view illustrating an example of the image sensor of FIG. 5 .

The image sensor 300 according to the present example includes a green sensor that selectively absorbs light in a green wavelength region, a blue sensor that selectively absorbs light in a blue wavelength region, and a red sensor that selectively absorbs light in a red wavelength region. It is a structure that has been

The image sensor 300 according to the present example includes a substrate 200, a lower insulating layer 60, a middle insulating layer 65, an upper insulating layer 80, a first sensor 100a, a second sensor 100b, and A third sensor 100c is included.

Substrate 200 may be a semiconductor substrate, such as a silicon substrate, on which transfer transistors (not shown) and charge storages 255a, 255b, and 255c are integrated.

A metal wire (not shown) and a pad (not shown) are formed on the substrate 200 , and a lower insulating layer 60 is formed on the metal wire and the pad.

A first sensor 100a, a second sensor 100b, and a third sensor 100c are sequentially formed on the lower insulating layer 60 .

The first, second, and third sensors 100a, 100b, and 100c may each be the sensor 100 described above. One of the first electrode 110 and the second electrode 120 of the first, second, and third sensors 100a, 100b, and 100c may be a light-receiving electrode, and the first, second, and third sensors 100a, The other one of the first electrode 110 and the second electrode 120 of 100b and 100c may be connected to the charge storages 255a, 255b and 255c.

The first sensor 100a may selectively absorb and photoelectrically convert light in any one wavelength region of red, blue, and green. For example, the first sensor 100a may be a red sensor. An intermediate insulating layer 65 is formed on the first sensor 100a.

A second sensor 100b is formed on the middle insulating layer 65 . The second sensor 100b may selectively absorb and photoelectrically convert light in any one wavelength region of red, blue, and green. For example, the second sensor 100b may be a blue sensor.

An upper insulating layer 80 is formed on the second sensor 100b. The lower insulating layer 60, the middle insulating layer 65, and the upper insulating layer 80 have a plurality of trenches 85a, 85b, and 85c exposing charge storages 255a, 255b, and 255c.

A third sensor 100c is formed on the upper insulating layer 80 . The third sensor 100c may selectively absorb and photoelectrically convert light in any one wavelength region among red, blue, and green. For example, the third sensor 100c may be a green sensor.

A condensing lens (not shown) may be further formed on the third sensor 100c. The condensing lens can converge the light to one point by controlling the direction of the incident light. The condensing lens may have, for example, a cylindrical shape or a hemispherical shape, but is not limited thereto.

Although the drawing shows a structure in which the first sensor 100a, the second sensor 100b, and the third sensor 100c are sequentially stacked, the stacking order is not limited thereto and may be variously changed.

As described above, by having a structure in which the first sensor 100a, the second sensor 100b, and the third sensor 100c that absorb light in different wavelength regions are stacked, the size of the image sensor is further reduced, resulting in a miniaturized image sensor. can be implemented

7 is a plan view illustrating another example of an image sensor according to an exemplary embodiment, and FIG. 8 is a cross-sectional view illustrating an example of the image sensor of FIG. 7 .

7 and 8, the image sensor 300 includes a sensor 100 positioned on a substrate 200, and the sensor 100 includes first, second, and third sensors 100a, 100b, and 100c. ). The first, second, and third sensors 100a, 100b, and 100c may convert light (eg, blue light, green light, or red light) of different wavelength regions into electrical signals.

Referring to FIG. 8 , the first, second, and third sensors 100a, 100b, and 100c are arranged in a direction parallel to the surface of the substrate 200 (for example, in the direction of the surface of the substrate 200), unlike the above-described example. has been Each of the first, second and third sensors 100a, 100b, 100c is electrically connected through a trench 85 to a charge storage 255 integrated in the substrate 200.

For example, the aforementioned sensor 100 may be included in a display panel, and may be applied to, for example, a sensor embedded display panel in which the sensor 100 is embedded in the display panel.

Hereinafter, a sensor-embedded display panel including the above-described sensor will be described.

A sensor-embedded display panel according to an embodiment may be a display panel capable of performing a display function and a recognition function (eg, a biometric function), and an in-cell in which a sensor performing a recognition function (eg, a biometric function) is embedded in the display panel. It may be an in-cell type display panel.

FIG. 9 is a plan view illustrating an example of a sensor-embedded display panel according to an exemplary embodiment, and FIG. 10 is a cross-sectional view illustrating an example of a sensor-embedded display panel according to an exemplary embodiment.

Referring to FIGS. 9 and 10 , a sensor embedded display panel 1000 according to an exemplary embodiment includes a plurality of sub-pixels PX displaying different colors. The plurality of sub-pixels PX may display at least three primary colors, for example, a first sub-pixel PX1 displaying different first, second, and third colors selected from red, green, and blue. ), a second subpixel PX2 and a third subpixel PX3. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, the first sub-pixel PX1 may be a red sub-pixel displaying red, and the second sub-pixel PX2 may be green. may be a green sub-pixel displaying , and the third sub-pixel PX3 may be a blue sub-pixel displaying blue. However, it is not limited thereto and may further include an auxiliary sub-pixel (not shown) such as a white sub-pixel.

The plurality of sub-pixels PX including the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 form one unit pixel UP along rows and/or columns. Can be arranged repeatedly. In FIG. 9, a structure including one first sub-pixel PX1, two second sub-pixels PX2, and one third sub-pixel PX3 in the unit pixel UP is illustrated as an example, but it is limited thereto. It may include at least one first sub-pixel PX1 , at least one second sub-pixel PX2 , and at least one third sub-pixel PX3 . In the drawings, a pentile type arrangement is shown as an example, but the arrangement of the subpixels PX is not limited thereto and may vary. An area occupied by the plurality of sub-pixels PX and displaying colors by the plurality of sub-pixels PX may be a display area DA displaying an image.

Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a light emitting element. For example, the first subpixel PX1 may include the first light emitting device 410 capable of emitting light of a wavelength spectrum of a first color, and the second subpixel PX2 may include a wavelength spectrum of a second color. The third sub-pixel PX3 may include a third light emitting element 430 capable of emitting light of a third color wavelength spectrum. can However, it is not limited thereto, and at least one of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 is a combination of the first color, the second color, and the third color, that is, a white wavelength spectrum. It may include a light emitting element that emits light and display a first color, a second color, or a third color through a color filter (not shown).

A sensor embedded display panel 1000 according to an embodiment includes the sensor 100 described above. The sensor 100 may be disposed in a non-display area (NDA). The non-display area NDA is an area other than the display area DA, and may be an area in which the first subpixel PX1 , the second subpixel PX2 , the third subpixel PX3 , and the auxiliary subpixel are not disposed. can The sensor 100 may be disposed between at least two selected from the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 , and the first sensor 100 may be disposed in the display area DA. The second and third light emitting devices 410, 420, and 430 may be arranged side by side.

The sensor 100 may be an optical type recognition sensor (eg, a biometric sensor), and emit light from at least one of the first, second, and third light emitting elements 410, 420, and 430 disposed in the display area DA. Light reflected by a recognition target 40 such as a living body, tool, or object may be absorbed and converted into an electrical signal. Here, the living body may be a finger, fingerprint, palm, iris, face, and/or wrist, but is not limited thereto. The sensor 100 may be, for example, a fingerprint sensor, an illuminance sensor, an iris sensor, a distance sensor, a blood vessel distribution sensor, and/or a heart rate sensor, but is not limited thereto.

The sensor 100 may be disposed on the substrate 200 on the same plane as the first, second, and third light emitting devices 410 , 420 , and 430 and may be embedded in the display panel 1000 .

Referring to FIG. 10 , a sensor embedded display panel 1000 includes a substrate 200; a thin film transistor 280 formed on the substrate 200; an insulating layer 290 formed over the thin film transistor 280; a pixel definition layer 180 formed over the insulating layer 290; It includes first, second, or third light emitting devices 410, 420, and 430 and a sensor 100 positioned in a space partitioned by the pixel-defining layer 180.

The substrate 200 may be a light-transmitting substrate, for example, a glass substrate or a polymer substrate. Polymer substrates include, for example, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, polyorganosiloxane, styrene-ethylene-butylene-styrene, polyurethane , polyacrylic, polyolefin, or a combination thereof, but is not limited thereto.

A plurality of thin film transistors 280 are formed on the substrate 200 . One or more thin film transistors 280 may be included in each sub-pixel PX, and may include, for example, at least one switching thin film transistor and/or at least one driving thin film transistor. The substrate 200 on which the thin film transistor 280 is formed may be referred to as a thin film transistor substrate (TFT substrate) or a thin film transistor backplane (TFT backplane).

The insulating layer 290 may cover the substrate 200 and the thin film transistor 280 and may be formed on the entire surface of the substrate 200 . The insulating layer 290 may be a planarization film or a passivation film, and may include an organic insulating material, an inorganic insulating material, an inorganic insulating material, or a combination thereof. The insulating layer 290 includes a plurality of contact holes 241 for connecting the first, second, and third light emitting elements 410, 420, and 430 and the thin film transistor 280, and the sensor 100 and the thin film transistor 280. ) may have a plurality of contact holes 242 for electrically connecting them. The insulating layer 290 may include an inorganic material, an organic material, an inorganic material, or a combination thereof. The inorganic material may be, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or aluminum nitride, and the organic material may be, for example, polyimide or polyimide. It may be an amide, polyamideimidi or polyacrylic, and the organic/inorganic material may be, for example, polyorganosiloxane or polyorganosilazane.

A pixel definition layer 180 may also be formed on the entire surface of the substrate 200 and may be positioned between adjacent subpixels PX to partition each subpixel PX. The pixel definition layer 180 may have a plurality of openings 181 located in each sub-pixel PX, and the first, second and third light emitting devices 410, 420 and 430 and the openings 181 may be provided in each opening 181. Any one of the sensors 100 may be located. The pixel definition layer 180 may include an inorganic material, an organic material, an inorganic material, or a combination thereof, and the inorganic material may be, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, or aluminum nitride, and the organic material may be, for example, polyimide, It may be polyamide, polyamideimidi or polyacrylic, and the organic/inorganic material may be, for example, polyorganosiloxane or polyorganosilazane.

The first, second, and third light emitting devices 410, 420, and 430 are formed on the substrate 200 (or thin film transistor substrate) and are repeatedly arranged along the surface direction (eg, xy direction) of the substrate 200. has been As described above, the first, second, and third light emitting elements 410, 420, and 430 may be included in the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, respectively. , The first, second, and third light emitting devices 410, 420, and 430 may be electrically connected to a separate thin film transistor 280 and driven independently.

The first, second, and third light emitting elements 410, 420, and 430 may independently emit one light selected from a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, and a combination thereof. . For example, the first light emitting device 410 may emit light of a red wavelength spectrum, the second light emitting device 420 may emit light of a green wavelength spectrum, and the third light emitting device 430 may emit light of a blue wavelength spectrum. of light can be emitted. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may have a maximum emission wavelength (λ _max ) in a wavelength range of about 600 nm to less than 750 nm, about 500 nm to 600 nm, and about 400 nm to less than 500 nm, respectively.

The first, second, and third light emitting devices 410, 420, and 430 may be light emitting diodes, for example, organic light emitting diodes including organic materials, inorganic light emitting diodes including inorganic materials, and quantum dots. It may be a quantum dot light emitting diode including a perovskite light emitting diode including a perovskite.

The sensor 100 is formed on the substrate 200 (or thin film transistor substrate), and may be randomly or regularly arranged along the surface direction (eg, xy direction) of the substrate 200 . As described above, the sensor 100 may be located in the non-display area NDA, and may be independently driven by being connected to a separate thin film transistor 280 . The sensor 100 may absorb light of the same wavelength spectrum as light emitted from at least one of the first, second, and third light emitting elements 410, 420, and 430 and convert it into an electrical signal, for example, a red wavelength spectrum. , green wavelength spectrum, blue wavelength spectrum, or a combination of these light can be absorbed and converted into an electrical signal. The sensor 100 may be, for example, a photoelectric conversion diode, and may be, for example, an organic photoelectric conversion diode containing an organic material.

Each of the first, second, and third light emitting elements 410, 420, and 430 and the sensor 100 include pixel electrodes 411, 421, 431, and 110; a common electrode 120 facing the pixel electrodes 411, 421, 431, and 110 and to which a common voltage is applied; The light emitting layers 412 , 422 , 432 or the photoelectric conversion layer 130 positioned between the pixel electrodes 411 , 421 , 431 , and 110 and the common electrode 120 , the first common auxiliary layer 140 , and the second common auxiliary layer 140 . Layer 150 is included. The pixel electrode 110 of the sensor 100 may correspond to the first electrode 110 of the sensor 100 described above, and the common electrode 120 of the sensor 100 may correspond to the second electrode of the sensor 100 described above. It may correspond to the electrode 120, and the first and second common auxiliary layers 140 and 150 may correspond to the first and second auxiliary layers 140 and 150 of the sensor 100 described above.

The first, second, and third light emitting devices 410, 420, and 430 and the sensor 100 are arranged side by side along the surface direction (eg, xy direction) of the substrate 200, and the common electrode 120 formed on the entire surface , The first common auxiliary layer 140 and the second common auxiliary layer 150 may be shared.

The common electrode 120 is continuously formed on the light emitting layers 412 , 422 , and 432 and the photoelectric conversion layer 130 , and is substantially formed on the entire surface of the substrate 200 . The common electrode 120 may apply a common voltage to the first, second, and third light emitting devices 410 , 420 , and 430 and the sensor 100 .

The first common auxiliary layer 140 is positioned between the pixel electrodes 411, 421, 431, and 110, the light emitting layers 412, 422, and 432, and the photoelectric conversion layer 130, and the pixel electrodes 411, 421, 431, and 110 ) and the light emitting layers 412, 422, 432 and the photoelectric conversion layer 130 may be formed continuously.

The first common auxiliary layer 140 is a charge auxiliary layer (eg hole auxiliary layer) that facilitates injection and/or movement of charges (eg holes) from the pixel electrodes 411 , 421 , and 431 to the light emitting layers 412 , 422 and 432 . layer) may be For example, the HOMO energy level of the first common auxiliary layer 140 may be located between the HOMO energy level of the emission layers 412, 422, and 432 and the work function of the pixel electrodes 411, 421, and 431, and the pixel electrode 411 , 421, 431), the HOMO energy levels of the first common auxiliary layer 140, and the HOMO energy levels of the emission layers 412, 422, and 432 may be sequentially deepened. On the other hand, the LUMO energy level of the first common auxiliary layer 140 may be shallower than the LUMO energy level of the photoelectric conversion layer 130 and the work function of the pixel electrode 110 .

The first common auxiliary layer 140 may include an organic material, an inorganic material, an inorganic material, or a combination thereof satisfying the HOMO energy level, for example, a phthalocyanine compound such as copper phthalocyanine; DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA (4,4' ,4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N, -(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT/PSS (Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)), PANI/DBSA (Polyaniline/Dodecylbenzenesulfonic acid), PANI/CSA( Polyaniline/Camphor sulfonicacid), PANI/PSS (Polyaniline/Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), containing triphenylamine Polyetherketone (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium [Tetrakis (pentafluorophenyl) borate], HAT-CN (dipyrazino [2,3-f: 2',3'-h] quinoxaline-2,3,6 ,7,10,11-hexacarbonitrile), carbazole-based derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene-based derivatives, TPD (N,N'-bis(3-methylphenyl)-N,N'- Triphenylamine derivatives such as diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPB (N,N' -di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC(4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD(4,4′ -Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto no. The first common auxiliary layer 140 may have one layer or two or more layers.

The second common auxiliary layer 150 may be positioned between the light emitting layers 412 , 422 , and 432 and the photoelectric conversion layer 130 and the common electrode 120 . The second common auxiliary layer 150 may be continuously formed above the light emitting layers 412 , 422 , and 432 and the photoelectric conversion layer 130 and below the common electrode 120 .

The second common auxiliary layer 150 is an auxiliary charge layer (eg, an electron auxiliary layer) that facilitates injection and/or movement of charges (eg, electrons) from the common electrode 120 to the light emitting layers 412 , 422 , and 432 . can For example, the LUMO energy level of the second common auxiliary layer 150 may be located between the LUMO energy levels of the light emitting layers 412, 422, and 432 and the work function of the common electrode 120, and the work function of the common electrode 120 , the LUMO energy level of the second common auxiliary layer 150 and the LUMO energy levels of the light emitting layers 412, 422, and 432 may be sequentially shallow.

The second common auxiliary layer 150 may include an organic material, an inorganic material, an inorganic material, or a combination thereof satisfying the LUMO energy level, and may include, for example, a metal halide such as LiF, NaCl, CsF, RbCl, and RbI; lanthanide metals such as Yb; metal oxides such as Li ₂ O and BaO; Liq (Lithium quinolate), Alq3 (Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'- (pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5 -Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl) -1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5 -diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2 -methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq ₂ (berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2) -yl)anthracene), BmPyPhB (1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), or a combination thereof, but is not limited thereto. 140) may be one layer or two or more layers.

Each of the first, second, and third light emitting elements 410 , 420 , and 430 and the sensor 100 include pixel electrodes 411 , 421 , 431 , and 110 facing the common electrode 120 . One of the pixel electrodes 411 , 421 , 431 , and 110 and the common electrode 120 is an anode and the other is a cathode. For example, the pixel electrodes 411 , 421 , 431 , and 110 may be anodes and the common electrode 120 may be a cathode. The pixel electrodes 411 , 421 , 431 , and 110 are separated for each sub-pixel PX and are electrically connected to separate thin film transistors 280 to be independently driven.

Each of the pixel electrodes 411, 421, 431, and 110 and the common electrode 120 may be a light transmitting electrode or a reflective electrode. For example, at least one of the pixel electrodes 411, 421, 431, and 110 and the common electrode 120 may be It may be a light-transmitting electrode.

For example, when the pixel electrodes 411, 421, 431, and 110 are light-transmitting electrodes and the common electrode 120 is a reflective electrode, the sensor embedded display panel 1000 is a bottom emission type display panel that emits light toward the substrate 200 ( bottom emission type display panel). For example, when the pixel electrodes 411 , 421 , 431 , and 110 are reflective electrodes and the common electrode 120 is a light-emitting electrode, the display panel 1000 with a built-in sensor emits light toward the opposite side of the substrate 200 . It may be a top emission type display panel. For example, when each of the pixel electrodes 411 , 421 , 431 , and 110 and the common electrode 120 are light-transmitting electrodes, the sensor embedded display panel 1000 may be a both side emission type display panel.

For example, the pixel electrodes 411, 421, 431, and 110 may be reflective electrodes and the common electrode 120 may be a transflective electrode. In this case, the sensor embedded display panel 1000 may have a microcavity structure can form The microresonant structure is repeatedly reflected between a reflective electrode and a transflective electrode spaced apart by a predetermined optical length (eg, the distance between the transflective electrode and the reflective electrode) to enhance optical properties by enhancing light of a predetermined wavelength spectrum. can be improved

For example, among the lights emitted from the light-emitting layers 412, 422, and 432 of the first, second, and third light-emitting devices 410, 420, and 430, light having a predetermined wavelength spectrum is repeatedly passed between the transflective electrode and the reflective electrode. Among the modified lights that can be reflected and modified, light of a wavelength spectrum corresponding to the resonance wavelength of the microresonance is intensified to exhibit amplified luminous properties in a narrow wavelength region. Accordingly, the display panel 1000 with a built-in sensor can express colors of high color purity.

For example, among the light incident on the sensor 100, light of a predetermined wavelength spectrum may be repeatedly reflected between the transflective electrode and the reflective electrode to be modified, and among the modified light, light of a wavelength spectrum corresponding to the resonance wavelength of the microresonance. may exhibit enhanced photoelectric conversion characteristics in a narrow wavelength region. Accordingly, the sensor 100 may exhibit high photoelectric conversion characteristics in a narrow wavelength range.

Each of the first, second, and third light emitting devices 410 , 420 , and 430 includes light emitting layers 412 , 422 , and 432 positioned between the pixel electrodes 411 , 421 , 431 and the common electrode 120 . The light emitting layer 412 included in the first light emitting device 410, the light emitting layer 422 included in the second light emitting device 420, and the light emitting layer 432 included in the third light emitting device 430 have the same or different wavelengths. It may emit a spectrum of light, such as a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or a combination thereof.

For example, when the first light emitting device 410, the second light emitting device 420, and the third light emitting device 430 are red light emitting devices, green light emitting devices, and blue light emitting devices, respectively, included in the first light emitting device 410 The light emitting layer 412 may be a red light emitting layer emitting light of a red wavelength spectrum, and the light emitting layer 422 included in the second light emitting element 420 may be a green light emitting layer emitting light of a green wavelength spectrum, and the third light emitting element The light emitting layer 432 included in 430 may be a blue light emitting layer emitting light of a blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may have a maximum emission wavelength in a wavelength region of greater than about 600 nm and less than 750 nm, about 500 nm to 600 nm, and about 400 nm to less than 500 nm, respectively.

For example, when at least one of the first light emitting device 410, the second light emitting device 420, and the third light emitting device 430 is a white light emitting device, the light emitting layer of the white light emitting device emits light in the visible ray full-wave spectrum. For example, light may be emitted in a wavelength spectrum of about 380 nm to less than 750 nm, about 400 nm to 700 nm, or about 420 nm to 700 nm.

The light emitting layers 412 , 422 , and 432 may include an organic light emitting material, quantum dots, perovskite, or a combination thereof as a light emitting material. For example, the light emitting layers 412 , 422 , and 432 may include an organic light emitting material, and may include at least one host material and a fluorescent or phosphorescent dopant.

The organic light-emitting body is perylene; rubrene; 4-(dicyanomethylene)-2-methyl-6-[p-(dimethylamino)styryl]-4H-pyran; coumarin or a derivative thereof; carbazole or a derivative thereof; TPBi(2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); TBADN(2-t-butyl-9,10-di(naphth-2 -yl) anthracene); AND (9,10-di (naphthalene-2-yl) anthracene); CBP (4,4'-bis (N-carbazolyl) -1,1'-biphenyl); TCTA (4,4 ',4"-tris(carbazol-9-yl)-triphenylamine); TPBi(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene); TBADN(3-tert-butyl-9,10- di(naphth-2-yl)anthracene);DSA(distyrylarylene);CDBP(4,4'-bis(9-carbazolyl-2,2'-dimethylbiphenyl);MADN(2-Methyl-9,10-bis(naphthalene) -2-yl)anthracene);TCP(1,3,5-Tris(carbazol-9-yl)benzene);Alq3(tris(8-hydroxyquinolino)lithium);Pt, Os, Ti, Zr, Hf, Eu, organometallic compounds including Tb, Tm, Rh, Ru, Re, Be, Mg, Al, Ca, Mn, Co, Cu, Zn, Ga, Ge, Pd, Ag and/or Au, their derivatives or their It may be a combination, but is not limited thereto.

The sublimation temperature of known materials that may be included in the light emitting layers 412, 422, and 432 may be about 380 ° C or less, within the above range about 370 ° C or less, about 360 ° C or less, about 350 ° C or less, about 340 ° C or less, It may be about 330 ° C or less, about 320 ° C or less, about 310 ° C or less, about 300 ° C or less, about 290 ° C or less, about 280 ° C or less, about 270 ° C or less or about 250 ° C or less, about 100 ° C to 380 ° C, about 100 °C to 370 °C, about 100 °C to 360 °C, about 100 °C to 350 °C, about 100 °C to 340 °C, about 100 °C to 330 °C, about 100 °C to 320 °C, about 100 °C to 310 °C, about 100 °C to 300 °C, about 100 °C to 290 °C, about 100 °C to 280 °C, about 100 °C to 270 °C, about 100 °C to 250 °C, about 150 °C to 380 °C, about 150 °C to 370 °C, about 150 °C to 360°C, about 150°C to 350°C, about 150°C to 340°C, about 150°C to 330°C, about 150°C to 320°C, about 150°C to 310°C, about 150°C to 300°C, about 150°C to 290 °C, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150 °C to 250 °C.

Quantum dots include, for example, group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductor compounds, group I-III-VI semiconductor compounds, and group I-II-IV-VI semiconductors. compound, a group II-III-V semiconductor compound, or a combination thereof. Group II-VI semiconductor compounds include, for example, binary semiconductor compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS or mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS or mixtures thereof. ternary semiconductor compounds; And it may be selected from quaternary semiconductor compounds such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or mixtures thereof, but is not limited thereto. Group III-V semiconductor compounds include, for example, binary semiconductor compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb or mixtures thereof; ternary semiconductor compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb or mixtures thereof; And it may be selected from quaternary semiconductor compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb or mixtures thereof, but is not limited thereto. no. Group IV-VI semiconductor compounds include, for example, binary semiconductor compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe or mixtures thereof; ternary semiconductor compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe or mixtures thereof; And it may be selected from quaternary semiconductor compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, or mixtures thereof, but is not limited thereto. Group IV semiconductor compounds include, for example, single-element semiconductor compounds such as Si, Ge or mixtures thereof; and binary semiconductor compounds such as SiC, SiGe or mixtures thereof, but is not limited thereto. The group I-III-VI semiconductor compound may be, for example, CuInSe ₂ , CuInS ₂ , CuInGaSe, CuInGaS, or a mixture thereof, but is not limited thereto. The group I-II-IV-VI semiconductor compound may be selected from, for example, CuZnSnSe, CuZnSnS, or mixtures thereof, but is not limited thereto. Group II-III-V semiconductor compounds include, for example, InZnP, but are not limited thereto.

Perovskites are CH ₃ NH ₃ PbBr ₃ , CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ SnBr ₃ , CH ₃ NH ₃ SnI ₃ , CH ₃ NH ₃ Sn _1x Pb _x Br ₃ , CH ₃ NH ₃ Sn _1x Pb _x I ₃ , HC(NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ SnI ₃ , (C ₄ H ₉ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₅ CH ₂ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₅ CH ₂ NH ₃ ) ₂ PbI ₄ , (C ₆ H ₅ C ₂ H ₄ NH ₃ ) ₂ PbBr ₄ , (C ₆ H ₁₃ NH ₃ ) ₂ (CH ₃ NH ₃ ) _n1 Pb _n I _3n+1 (Where 0<x<1 and n is a positive integer) or a combination thereof, but is not limited thereto.

The sensor 100 includes a photoelectric conversion layer 130 positioned between the pixel electrode 110 and the common electrode 120 . The photoelectric conversion layer 130 is disposed side by side with the light emitting layers 412, 422, and 432 of the first, second, and third light emitting devices 410, 420, and 430 along the surface direction (eg, xy direction) of the substrate 200. The photoelectric conversion layer 130 and the light emitting layers 412, 422, and 432 may be positioned on the same plane.

The photoelectric conversion layer 130 can absorb light of a predetermined wavelength spectrum and convert it into an electrical signal, and the light emitted from at least one of the first, second and third light emitting devices 410, 420 and 430 described above Light reflected by the recognition target 40 may be absorbed and converted into an electrical signal. The photoelectric conversion layer 130 may absorb light of, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof.

For example, the photoelectric conversion layer 130 may selectively absorb light of a red wavelength spectrum having a maximum absorption wavelength in a wavelength region of greater than about 600 nm and less than about 750 nm, and the first, second, and third light emitting elements 410, Among 420 and 430 , light emitted from the red light emitting device may absorb light reflected by the recognition target 40 .

For example, the photoelectric conversion layer 130 may selectively absorb light of a green wavelength spectrum having a maximum absorption wavelength in a wavelength range of about 500 nm to 600 nm, and the first, second and third light emitting elements 410, 420, Light emitted from the green light emitting device of 430) may absorb light reflected by the recognition target 40 .

For example, the photoelectric conversion layer 130 may selectively absorb light of a blue wavelength spectrum having a maximum absorption wavelength in a wavelength region of about 380 nm or more and less than 500 nm, and the first, second, and third light emitting elements 410, Among 420 and 430 , light emitted from the blue light emitting device may absorb light reflected by the recognition target 40 .

For example, the photoelectric conversion layer 130 may absorb light of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, that is, light of a visible ray full-wave spectrum of about 380 nm or more and less than 750 nm, and the first, second and A combination of lights emitted from the third light emitting devices 410 , 420 , and 430 may absorb light reflected by the recognition target 40 .

The photoelectric conversion layer 130 may include a p-type semiconductor and an n-type semiconductor forming a pn junction, and the p-type semiconductor and the n-type semiconductor are as described above. As described above, the photoelectric conversion layer 130 includes an I layer, a p-type layer/I layer, an I layer/n-type including an intrinsic layer (I layer) in which a p-type semiconductor and an n-type semiconductor are mixed in a bulk heterojunction form. layer, p-type layer/I layer/n-type layer, etc., or may include a double layer including a p-type layer including a p-type semiconductor and an n-type layer including the aforementioned n-type semiconductor. . When the photoelectric conversion layer 130 is a double layer, the p-type layer may be positioned close to the pixel electrode 110 and the n-type layer may be positioned close to the common electrode 120 .

The p-type semiconductor of the photoelectric conversion layer 130 may have an energy level capable of forming an effective electrical match with the first common auxiliary layer 140. For example, the HOMO energy level of the first common auxiliary layer 140 and p The difference between the HOMO energy levels of the type semiconductor may be about 1.2 eV or less, and may be about 1.1 eV or less, about 1.0 eV or less, about 0.8 eV or less, about 0.7 eV or less, or about 0.5 eV or less within the above range, and about 0 to about 0.5 eV. 1.2eV, about 0 to 1.1eV, about 0 to 1.0eV, about 0 to 0.8eV, about 0 to 0.7eV, about 0 to 0.5eV, about 0.01 to 1.2eV, about 0.01 to 1.1eV, about 0.01 to 1.0eV , It may be about 0.01 to 0.8 eV, about 0.01 to 0.7 eV, or about 0.01 to 0.5 eV. Accordingly, charges (eg, holes) generated in the photoelectric conversion layer 130 may pass through the first common auxiliary layer 140 and be effectively transferred to and/or extracted from the pixel electrode 110 . An additional auxiliary layer (not shown) may be further included between the photoelectric conversion layer 130 and the first common auxiliary layer 140 , and the auxiliary layer may be disposed only on the sensor 100 .

The n-type semiconductor of the photoelectric conversion layer 130 may include the aforementioned organic compound, and the n-type semiconductor and the second common auxiliary layer 150 may have energy levels capable of forming effective electrical matching, for example The difference between the LUMO energy level of the second common auxiliary layer 150 and the LUMO energy level of the n-type semiconductor (the organic compound described above) may be about 1.2 eV or less, within the above range about 1.1 eV or less, about 1.0 eV or less, It may be about 0.8eV or less, about 0.7eV or less, or about 0.5eV or less, about 0 to 1.2eV, about 0 to 1.1eV, about 0 to 1.0eV, about 0 to 0.8eV, about 0 to 0.7eV, about 0 to 0.5 eV, about 0.01 to 1.2 eV, about 0.01 to 1.1 eV, about 0.01 to 1.0 eV, about 0.01 to 0.8 eV, about 0.01 to 0.7 eV, or about 0.01 to 0.5 eV. Accordingly, charges (eg, electrons) generated in the photoelectric conversion layer 130 may pass through the second common auxiliary layer 150 and be effectively transferred to and/or extracted from the common electrode 120 . An additional auxiliary layer (not shown) may be further included between the photoelectric conversion layer 130 and the second common auxiliary layer 150 , and the auxiliary layer may be disposed only on the sensor 100 .

A detailed description of the photoelectric conversion layer 130 is as described above.

For example, the light-emitting layers 412, 422, and 432 may include an organic light-emitting material, and the organic light-emitting material of the light-emitting layers 412, 422, and 432 and the p-type semiconductor and the n-type semiconductor of the photoelectric conversion layer 130 are disposed in the same chamber. It can be vacuum deposited. Accordingly, a difference in sublimation temperature between the organic light emitting materials of the light emitting layers 412, 422, and 432 and the p-type semiconductor and the n-type semiconductor of the photoelectric conversion layer 130 may be about 150° C. or less, and within the above range, for example, about 130° C. or less. , about 120 ℃ or less, about 110 ℃ or less, about 100 ℃ or less, about 90 ℃ or less, about 80 ℃ or less, about 70 ℃ or less, about 60 ℃ or less, about 50 ℃ or less, about 40 ℃ or less, about 30 ℃ or less , It may be about 20 ° C or less, about 15 ° C or less or about 10 ° C or less, within the above range 0 ° C to about 150 ° C, 0 ° C to about 130 ° C, 0 ° C to about 120 ° C, 0 ° C to about 110 ° C, 0°C to about 100°C, 0°C to about 90°C, 0°C to about 80°C, 0°C to about 70°C, 0°C to about 60°C, 0°C to about 50°C, 0°C to about 40°C, 0 °C to about 30 °C, 0 °C to about 20 °C, 0 °C to about 15 °C, 0 °C to about 10 °C, about 2 °C to about 150 °C, about 2 °C to about 130 °C, about 2 °C to about 120 °C , about 2 ° C to about 110 ° C, about 2 ° C to about 100 ° C, about 2 ° C to about 90 ° C, about 2 ° C to about 80 ° C, 2 ° C to about 70 ° C, about 2 ° C to about 60 ° C, about 2 °C to about 50 °C, about 2 °C to about 40 °C, about 2 °C to about 30 °C, about 2 °C to about 20 °C, about 2 °C to about 15 °C or about 2 °C to 10 °C.

For example, the sublimation temperatures of the organic light emitting materials of the light emitting layers 412, 422, and 432 and the p-type semiconductor and n-type semiconductor of the photoelectric conversion layer 130 may be about 380° C. or less, respectively, and about 370° C. or less within the above range, about 360 °C or less, about 350 °C or less, about 340 °C or less, about 330 °C or less, about 320 °C or less, about 310 °C or less, about 300 °C or less, about 290 °C or less, about 280 °C or less, about 270 °C or less; or It may be up to about 250 ° C, about 100 ° C to 380 ° C, about 100 ° C to 370 ° C, about 100 ° C to 360 ° C, about 100 ° C to 350 ° C, about 100 ° C to 340 ° C, about 100 ° C to 330 ° C, about 100 ° C to 320 ° C, about 100 ° C to 310 ° C, about 100 ° C to 300 ° C, about 100 ° C to 290 ° C, about 100 ° C to 280 ° C, about 100 ° C to 270 ° C, about 100 ° C to 250 ° C, about 150 °C to 380 °C, about 150 °C to 370 °C, about 150 °C to 360 °C, about 150 °C to 350 °C, about 150 °C to 340 °C, about 150 °C to 330 °C, about 150 °C to 320 °C, about 150 °C to 310 °C, about 150 °C to 300 °C, about 150 °C to 290 °C, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150 °C to 250 °C.

As such, the p-type semiconductor and the n-type semiconductor of the photoelectric conversion layer 130 can form the above-described electrical matching with the first and second common auxiliary layers 140 and 150, and the organic light-emitting layers 412, 422, and 432 Since the p-type semiconductor and the n-type semiconductor of the light emitting body and the photoelectric conversion layer 130 have thermal characteristics in a similar range, the sensor can be effectively formed in the display panel without deterioration of electrical characteristics and complexity of the process.

The light emitting layers 412, 422, and 432 and the photoelectric conversion layer 130 may each independently have a thickness of about 5 nm to 300 nm, and may be about 10 nm to 250 nm, about 20 nm to 200 nm, or about 30 nm to 180 nm within the above range. . A difference in thickness between the light emitting layers 412, 422, and 432 and the photoelectric conversion layer 130 may be about 20 nm or less, and may be about 15 nm or less, about 10 nm or less, or about 5 nm or less within the above range, and the light emitting layers 412, 422, 432) and the photoelectric conversion layer 130 may have substantially the same thickness.

An encapsulation layer 380 is formed on the first, second and third light emitting elements 410 , 420 , 430 and the sensor 100 . The encapsulation layer 380 may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic/inorganic film, or a combination thereof. The organic layer may include, for example, an acrylic resin, a (meth)acrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxide, nitride, and/or oxynitride, and may include, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, It may be titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or combinations thereof, but is not limited thereto. The organic/inorganic layer may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer 380 may have one layer or two or more layers.

As described above, the sensor-embedded display panel 1000 according to the present embodiment includes first, second, and third light emitting devices 410, 420, and 430 that emit light of a predetermined wavelength spectrum to display colors, and the light is used as a recognition target. By including the sensor 100 that absorbs the light reflected by 40 and converts it into an electrical signal on the same plane on the substrate 200, it is possible to perform both a display function and a recognition function (eg, a biometric function). Accordingly, unlike conventional display panels in which the sensor is manufactured as a separate module and attached to the outside of the display panel or formed on the lower part of the display panel, improved performance can be obtained without increasing the thickness of the display panel (1000). can be implemented.

In addition, since the sensor 100 uses light emitted from the first, second, and third light emitting elements 410, 420, and 430, it is possible to perform a recognition function (eg, a biometric function) without a separate light source. Therefore, since there is no need to provide a separate light source outside the display panel, a reduction in the aperture ratio of the display panel due to the area occupied by the light source can be prevented and at the same time, power consumed by the separate light source is saved, thereby improving the sensor-embedded display panel 1000. Power consumption can be improved.

Also, as described above, the first, second, and third light emitting elements 410, 420, and 430 and the sensor 100 include a common electrode 120, a first common auxiliary layer 140, and a second common auxiliary layer 150. ) By sharing the first, second and third light emitting elements 410, 420, 430 and the sensor 100, the structure and process can be simplified compared to the case of forming the sensor 100 in a separate process.

In addition, the sensor 100 may be an organic sensor including an organic photoelectric conversion layer, and thus may have a light absorption twice as high as that of an inorganic diode such as a silicon photodiode, thereby having a highly sensitive sensing function with a thinner thickness. can

In addition, since the sensors 100 may be disposed anywhere in the non-display area NDA, a desired number of sensors may be disposed at a desired location of the display panel 1000 with a built-in sensor. Therefore, for example, by randomly or regularly disposing the sensors 100 on the entire display panel 1000 with a built-in sensor, the biometric function can be performed on any part of the screen of an electronic device such as a mobile device, and the biometric recognition function can be performed according to the user's selection. The biometric function may be selectively performed only at a specific location where the function is required.

Hereinafter, another example of the sensor embedded display panel 1000 according to an exemplary embodiment will be described.

11 is a cross-sectional view illustrating another example of a display panel with a built-in sensor according to an exemplary embodiment.

Referring to FIG. 11 , the display panel 1000 with a built-in sensor according to an embodiment has a plurality of sub-pixels (PX) displaying different colors, that is, different pixels selected from among red, green, and blue, as in the above-described embodiment. It includes a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 displaying one color, a second color, and a third color, and the first sub-pixel PX1 and the second sub-pixel PX1 . Each of the sub-pixel PX2 and the third sub-pixel PX3 includes a first light emitting device 410 , a second light emitting device 420 and a third light emitting device 430 .

However, the display panel 1000 with a built-in sensor according to the present example may further include a fourth light emitting element 440 emitting light of an infrared wavelength spectrum, unlike the foregoing example. For example, the fourth light emitting element 440 may be included in the fourth sub-pixel PX4 adjacent to the first sub-pixel PX1 , the second sub-pixel PX2 , and/or the third sub-pixel PX3 , or may be included in the non-display area. (NDA) may be included. The fourth sub-pixel PX4 may form one unit pixel UP together with the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 , and the unit pixel UP may be arranged repeatedly along rows and/or columns.

The first sub-pixel PX1 , the second sub-pixel PX2 , the third sub-pixel PX3 , the first light emitting device 410 , the second light emitting device 420 , the third light emitting device 430 , and the sensor ( 100) is as described above.

The fourth light emitting device 440 is disposed on the substrate 200 and may be disposed on the same plane as the first, second, and third light emitting devices 410 , 420 , and 430 and the sensor 100 . The fourth light emitting element 440 may be electrically connected to a separate thin film transistor 280 and driven independently. The fourth light emitting element 440 may have a structure in which a pixel electrode 441, a first common auxiliary layer 140, a light emitting layer 442, a second common auxiliary layer 150, and a common electrode 120 are sequentially stacked. Among them, the common electrode 120, the first common auxiliary layer 140, and the second common auxiliary layer 150 are the first, second, and third light emitting elements 410, 420, and 430 and the sensor 100 can be shared with The light emitting layer 442 may emit light of an infrared wavelength spectrum, for example, about 750 nm or more, about 750 nm to 20 μm, about 780 nm to 20 μm, about 800 nm to 20 μm, about 750 nm to 15 μm, or about 780 nm to 15 μm. , about 800 nm to 15 μm, about 750 nm to 10 μm, about 780 nm to 10 μm, about 800 nm to 10 μm, about 750 nm to 5 μm, about 780 nm to 5 μm, about 800 nm to 5 μm, about 750 nm to 3 μm, about 780 nm to 3 μm, about 800 nm to 3 μm, about 750 nm to 2 μm, about 780 nm to 2 μm, about 800 nm to 2 μm, about 750 nm to 1.5 μm, about 780 nm to 1.5 μm, or about 800 nm to 1.5 μm. can have

The sensor 100 transmits light emitted from at least one of the first, second, third, and fourth light emitting elements 410, 420, 430, and 440 to light reflected by a recognition target 40 such as a living body or a tool. can be absorbed and converted into electrical signals. For example, the sensor 100 may absorb the light emitted from the fourth light emitting element 440 that emits light in the infrared wavelength spectrum and the light reflected by the recognition target 40 and convert it into an electrical signal. In this case, the photoelectric conversion layer 130 of the sensor 100 may include an organic material, an inorganic material, an inorganic material, or a combination thereof that selectively absorbs light in the infrared wavelength spectrum. For example, quantum dots, quinoid metal complexes, poly Methine Compound, Cyanine Compound, Phthalocyanine Compound, Merocyanine Compound, Naphthalocyanine Compound, Immonium Compound, Diimmonium Compound, Triarylmethane Compound, Dipyrromethene Compound, Anthraquinone Compound, Naphthoquinone, Diquinone Compound, Naph Toquinone compounds, anthraquinone compounds, squarylium compounds, rylene compounds, perylene compounds, squaraine compounds, pyrylium compounds, squaraine compounds, thiopyrylium compounds, diketopyrrolopyrrole compounds, boron dipyrromethene compounds , a nickel-dithiol complex compound, a croconium compound, a derivative thereof, or a combination thereof, but is not limited thereto.

The display panel 1000 with a built-in sensor according to the present embodiment includes the fourth light emitting element 440 emitting light of an infrared wavelength spectrum and the sensor 100 absorbing light of an infrared wavelength spectrum, thereby recognizing light according to the above-described embodiment. In addition to the function (biometric recognition function), the sensitivity of the sensor 100 can be improved even in a low-light environment, and the ability to detect a 3D image can be further enhanced by widening the dynamic range for detailed distinction between black and white. Therefore, the sensing capability of the display panel 1000 with a built-in sensor can be further improved. In particular, because the light of the infrared wavelength spectrum can have a deeper penetration depth into the living body due to its long-wavelength characteristics, and information located at different distances can also be effectively obtained, images or changes of blood vessels such as veins, iris and/or face, etc. can be effectively detected, so the application range can be further expanded.

The sensor-embedded display panel 1000 described above may be applied to electronic devices such as various display devices. Electronic devices such as display devices include, for example, mobile phones, video phones, smart phones, mobile phones, smart pads, smart watches, digital cameras, tablet PCs, laptop PCs, notebooks, computer monitors, wearable computers, televisions, and digital broadcasting devices. Terminals, e-books, personal digital assistants (PDA), portable multimedia players (PMPs), enterprise digital assistants (EDAs), head mounted displays (HMDs), car navigation systems, Internet of Things devices (IoT), and the Internet of Everything Devices (IoE), drones, door locks, safes, automatic teller machines (ATMs), security devices, medical devices, or automotive electric components may be applied, but are not limited thereto.

12 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an example.

Referring to FIG. 12 , the electronic device 2000 includes the sensor-embedded display panel 1000 described above, and the sensor 100 is disposed on the front or part of the sensor-embedded display panel 1000, so that a living body can be viewed at any part of the screen. The recognition function may be performed, or the biometric function may be selectively performed only at a specific location where the biometric function is required according to the user's selection.

An example of a method of recognizing the recognition target 40 in an electronic device 2000 such as a display device is, for example, the first, second, and third light emitting devices 410, 420, and 430 of the sensor built-in display panel 1000 ( Alternatively, the first, second, third, and fourth light emitting devices 410, 420, 430, and 440) and the sensor 100 are driven so that the first, second, and third light emitting devices 410, 420, and 430 ( Alternatively, detecting, with the sensor 100, light reflected from the recognition target 40 among lights emitted from the first, second, third, and fourth light emitting devices 410, 420, 430, and 440, stored in advance. Comparing the image of the recognition target 40 with the image of the recognition target 40 detected by the sensor 100, and judging the coincidence of the compared images, and if they match, the recognition of the recognition target 40 is completed. A step of turning off the sensor 100 according to the determination, permitting user access to the display device, and driving the sensor-embedded display panel 1000 to display an image may be included.

13 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to an embodiment.

Referring to FIG. 13 , the electronic device 2000 may further include a bus 1310, a processor 1320, a memory 1330, and at least one additional device 1340 in addition to the aforementioned components. Information of the aforementioned sensor-embedded display panel 1000 , processor 1320 , memory 1330 , and at least one additional device 1340 may be transferred to each other through the bus 1310 .

The processor 1320 may include hardware including logic circuits; hardware/software combinations such as software running on processors; or a combination thereof. For example, the processing circuit may include a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array , FPGA), system-on-chip (SoC), programmable logic unit (programmable logic unit), microprocessor (microprocessor), application-specific integrated circuit (ASIC) and the like. As an example, the processing circuitry may include a non-transitory computer readable storage device. For example, the processor 1320 may control a display operation of the display panel 1000 with a built-in sensor or a sensor operation of the sensor 100 .

The memory 1330 may store an instruction program, and the processor 1320 may execute functions related to the display panel 1000 with a built-in sensor by executing the stored instruction program.

The one or more additional devices 1340 may be one or more communication interfaces (eg, wireless communication interfaces, wired interfaces), user interfaces (eg, keyboard, mouse, buttons, etc.), power supplies and/or power supply interfaces, or combinations thereof. there is.

Units and/or modules described in this specification may be implemented using hardware components and software components. For example, hardware components may include microphones, amplifiers, band pass filters, audio-to-digital converters and processing units. A processing unit may be implemented using one or more hardware devices configured to perform and/or execute program code by performing arithmetic, logical, and input/output operations. A processing device may include a processor, controller and arithmetic logic unit, digital signal processor, microcomputer, field programmable array, programmable logic unit, microprocessor or any other device capable of responding to and executing instructions. . A processing device may access, store, operate, process, and generate data in response to execution of an operating system (OS) and one or more pieces of software running on the operating system.

Software may include computer programs, code, instructions, or combinations thereof and may individually or collectively instruct and/or configure a processing device to perform a purpose-purpose transformation of the processing device. Software and data may be permanently or temporarily embodied in machines, components, physical or virtual equipment, computer storage media or devices, or signal waves capable of interpreting or providing instructions or data to a processing device. Software may also be distributed across networked computer systems so that the software may be stored and executed in a distributed manner. Software and data may be stored by one or more non-transitory computer readable storage devices.

The method according to the foregoing exemplary implementation may be recorded in a non-transitory computer readable storage device including program instructions for implementing various operations of the foregoing exemplary implementation. Storage devices may also include, alone or in combination, program instructions, data files, data structures, and the like. Program instructions recorded in the storage device may be specially designed for this embodiment or may be known and usable to those skilled in computer software. Examples of non-transitory computer readable storage devices include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROM discs, DVDs and/or Blu-ray discs; magneto-optical media such as optical discs; and a hardware device configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. The foregoing device may be configured to operate as one or more software modules to perform the operations of the foregoing embodiments.

The above-described implementation will be described in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of rights.

Synthesis Example I: Synthesis of n-type semiconductor

Synthesis Example 1

[Compound A]

[Scheme 1]

1,5-Naphthalenedicarboxaldehyde (0.6 g, 3.5 mol, 1.0 equiv.), 1,3-Dimethyl-2-thiobarbituric acid (1.2 g, 6.8 mol, 2.0 equiv.), and EtOH (140 ml) were added to the reaction vessel, respectively. Stir for 30 minutes at room temperature. Next, Pyridine (0.1 g, 0.8 mol, 0.2 equiv.) was added, stirred for 30 minutes, and then reacted for 48 hours under reflux conditions. After cooling the reaction vessel to room temperature, the reaction solution was distilled off with an evaporator, and the residue was dried under vacuum. Next, methanol (160 ml) and chloroform (260 ml) were added to the residue, and the mixture was heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered and the solid is dried under vacuum. Next, chloroform (260 ml) is added to the solid and heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered. After drying the solid under vacuum, compound A is obtained (1.3 g, 2.6 mol, Y. 74.0%). In addition, when used for device evaluation, the compound is used after sublimation purification (99.9% purity).

¹ H NMR (500 MHz, CDCl ₃ ): δ 9.22 (s, 2H), 8.01 (d, 2H), 7.97 (d, 2H), 7.63 (dd, 2H), 3.86 (s, 3H), 3.39 (s , 3H).

Synthesis Example 2

[Compound B]

[Scheme 2]

1,5-Naphthalenedicarboxaldehyde (1.9 g, 10.5 mol, 1.0 equiv.), 1,3-Indanedione (3.1 g, 21.1 mol, 2.0 equiv.), and EtOH (400 ml) were added to the reaction vessel and stirred at room temperature for 30 minutes. do. Next, Pyridine (0.2 g, 2.3 mol, 0.2 equiv.) was added, stirred for 30 minutes, and then reacted for 48 hours under reflux conditions. After cooling the reaction vessel to room temperature, the reaction solution was kept in an evaporator and the residue was dried under vacuum. Next, chloroform (300 ml) is added to the residue, and the mixture is heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered. After drying the solid under vacuum, compound B is obtained (0.5 g, 1.2 mol, Y. 11.1%). In addition, when used for device evaluation, the compound is used after sublimation purification (99.9% purity).

¹ H NMR (500 MHz, CDCl ₃ ): δ 9.22 (s, 2H), 8.01 (d, 2H), 7.99-7.97 (m, 4H), 7.73 (dd, 1H), 7.69 (dd, 1H), 7.63 (dd, 2H).

Synthesis Example 3

[Compound C]

[Scheme 3]

2,6-Naphthalenedicarboxaldehyde (0.8 g, 4.1 mol, 1.0 equiv.), 1,3-Dimethyl-2-thiobarbituric acid (1.4 g, 8.1 mol, 2.0 equiv.), and EtOH (50 ml) were added to the reaction vessel, respectively. Stir for 30 minutes at room temperature. Next, Pyridine (0.1 g, 0.8 mol, 0.2 equiv.) was added, stirred for 30 minutes, and then reacted for 48 hours under reflux conditions. After cooling the reaction vessel to room temperature, the reaction solution was kept in an evaporator and the residue was dried under vacuum. Next, methanol (180 ml) and chloroform (220 ml) were added to the residue, and the mixture was heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered and the solid is dried under vacuum. Next, chloroform (400 ml) is added to the solid, and the mixture is heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered. After drying the solid under vacuum, compound C is obtained (1.1 g, 2.2 mol, Y. 54.8%). In addition, when used for device evaluation, the compound is used after sublimation purification (99.9% purity).

¹ H NMR (500 MHz, CDCl ₃ ): δ 8.73 (s, 2H), 8.58 (s, 2H), 8.14 (d, 2H), 7.99 (d, 2H), 3.830 (s, 6H), 3.192 (s , 6H).

Synthesis Example 4

[Compound D]

[Scheme 4]

2,6-Naphthalenedicarboxaldehyde (1.9 g, 10.5 mol, 1.0 equiv.), 1,3-Indanedione (3.1 g, 21.1 mol, 2.0 equiv.), and EtOH (400 ml) were added to the reaction vessel and stirred at room temperature for 30 minutes. do. Next, Pyridine (0.2 g, 2.3 mol, 0.2 equiv.) was added, stirred for 30 minutes, and then reacted for 48 hours under reflux conditions. After cooling the reaction vessel to room temperature, the reaction solution was kept in an evaporator and the residue was dried under vacuum. Next, chloroform (350 ml) is added to the residue, and the mixture is heated and stirred at reflux temperature for 1 hour. After cooling the reaction vessel to room temperature, it is filtered and the solid is dried under vacuum. Next, N-methylpyrrolidone (NMP) (300 ml) was added to the solid, stirred at room temperature for 1 hour, and the reaction vessel was filtered. After drying the solid under vacuum, compound D is obtained (1.7 g, 3.9 mol, Y. 33.9%). In addition, when used for device evaluation, the compound is used after sublimation purification (99.9% purity).

¹ H NMR (500 MHz, CDCl ₃ ): δ 8.73 (s, 2H), 8.58 (s, 2H), 8.14 (d, 2H), 8.00-7.98 (m, 4H), 7.73 (dd, 1H), 7.69 (dd, 1H).

Synthesis Example II: Synthesis of p-type semiconductor

Synthesis Example 5

[Compound 2A]

[Scheme 5]

2.0 g (5.6 mmol) of 4,4-dimethyl-4H-selenopheno[3',2':5,6]pyrido[3,2,1-jk]carbazole-2-carbaldehyde was suspended in ethanol, and 1 1.1 g (6.7 mmol) of -methyl-2-thioxodihydropyrimidine-4,6(1H,5H)-dione was added and reacted at 50°C for 24 hours to obtain 2.4 g of Compound 2a. The yield is 86.0%. The obtained compound is purified by sublimation to a purity of 99.9%.

¹ H NMR (500 MHz, CDCl ₂ ): δ 8.95 (s, 1H), 8.77 (s, 1H), 8.65 (s, 2H), 8.18 (s, 2H) 8.06 (d, 2H), 7.92 (d, 2H), 7.83 (d, 2H), 7.62 (d, 2H), 7.44 (t, 2H), 7.36 (m, 6H), 3.76(s, 3H), 3.71 (s, 3H), 1.68 (s, 12H) ).

Reference example 1

Purchase and prepare C60 (nanom purple SUH, Frontier carbon).

Reference example 2

Purchase and prepare 2,7-di-tert-butylpyrene-4,5,9,10-tetraone (Ambeed, Inc., United States, CAS: 190843-93-7).

Reference example 3

Purchase and prepare 2,4,6-tri(9H-carbazol-9-yl)-1,3,5-triazine (Tokyo Chemical Industry Co., Ltd., Japan, CAS 134984-37-5).

Evaluation I

Evaluate the sublimation temperature of the organic compound obtained in Synthesis Example.

The sublimation temperature is evaluated by thermogravimetric analysis (TGA), and is evaluated from the temperature at the time when the weight of the sample decreases by 10% and 50% compared to the initial weight by raising the temperature under a high vacuum of 10 Pa or less.

The results are shown in Tables 1 and 2.

Ts ₍₁₀₎ (℃) Ts ₍₅₀₎ (℃) Synthesis Example 1 251 278 Synthesis Example 2 378 435 Synthesis Example 3 260 290 Synthesis Example 4 288 329 Reference example 1 439 493 Reference example 2 182 211

* T _{s (10)} (℃): The temperature at which the weight of the sample decreases by 10% compared to the initial weight

* T _{s (50)} (℃): The temperature at which the weight of the sample decreases by 50% compared to the initial weight

Ts ₍₁₀₎ (℃) Ts ₍₅₀₎ (℃) Synthesis Example 5 270 301

Evaluation II

The organic compound obtained in Synthesis Example was deposited on a glass substrate, and the energy level of the deposited thin film was evaluated.

The HOMO energy level can be evaluated by the amount of photoelectrons emitted according to energy by irradiating the thin film with UV light using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). The LUMO energy level can be obtained by obtaining the bandgap energy using a UV-Vis spectrometer (Shimadzu Corporation), and then calculating the LUMO energy level from the bandgap energy and the previously measured HOMO energy level.

The results are shown in Tables 3 and 4.

HOMO (eV) LUMO (eV) Energy band gap (eV) Synthesis Example 1 5.21 2.88 2.33 Synthesis Example 2 5.83 3.50 2.33 Synthesis Example 3 5.06 2.80 2.26 Synthesis Example 4 5.82 3.33 2.49 Reference example 1 6.40 4.23 2.17 Reference example 2 5.00 1.40 3.60 Reference example 3 5.97 2.49 2.78

* HOMO, LUMO: absolute value

HOMO (eV) LUMO (eV) Energy band gap (eV) Synthesis Example 5 5.66 3.70 1.96

Example: Manufacturing of Sensor I

Example 1

Al (10 nm), ITO (100 nm), and Al (8 nm) are sequentially deposited on a glass substrate to form an Al/ITO/Al structure lower electrode (work function: 4.9 eV). Subsequently, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine was deposited on the lower electrode to form a hole auxiliary layer (HOMO: 5.3 to 5.6 eV). , LUMO: 2.0 to 2.3 eV). Subsequently, Compound 2A (p-type semiconductor) obtained in Synthesis Example 5 was deposited on the hole auxiliary layer to form a 10 nm-thick p-type semiconductor layer, and Compound A (n-type semiconductor) obtained in Synthesis Example 1 was deposited thereon to form a 40 nm-thick layer. An n-type semiconductor layer of is formed to form a double-layered photoelectric conversion layer (λ _max = 530 nm). Subsequently, 4,7-diphenyl-1,10-phenanthroline is deposited on the photoelectric conversion layer to form an electron auxiliary layer (HOMO: 6.1 to 6.4 eV, LUMO: 2.9 to 3.2 eV). Subsequently, magnesium and silver are deposited on the electronic auxiliary layer to form an Mg:Ag upper electrode to manufacture a sensor.

Example 2

Al (10 nm), ITO (100 nm), and Al (8 nm) are sequentially deposited on a glass substrate to form an Al/ITO/Al structure lower electrode (work function: 4.9 eV). Subsequently, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine was deposited on the lower electrode to form a hole auxiliary layer (HOMO: 5.3 to 5.6 eV). , LUMO: 2.0 to 2.3 eV). Subsequently, Compound 2A (p-type semiconductor) obtained in Synthesis Example 5 was deposited on the hole auxiliary layer to form a p-type semiconductor layer having a thickness of 8 nm, and Compound B (n-type semiconductor) obtained in Synthesis Example 2 was deposited thereon to form a 34 nm-thick layer. An n-type semiconductor layer of is formed to form a double-layered photoelectric conversion layer (λ _max = 530 nm). Subsequently, 4,7-diphenyl-1,10-phenanthroline is deposited on the photoelectric conversion layer to form an electron auxiliary layer (HOMO: 6.1 to 6.4 eV, LUMO: 2.9 to 3.2 eV). Subsequently, magnesium and silver are deposited on the electronic auxiliary layer to form an Mg:Ag upper electrode to manufacture a sensor.

Example 3

A sensor was manufactured in the same manner as in Example 1, except that a 40 nm thick n-type semiconductor layer was formed by depositing Compound C obtained in Synthesis Example 3 instead of Compound A obtained in Synthesis Example 1.

Example 4

A sensor was manufactured in the same manner as in Example 2, except that compound D obtained in Synthesis Example 4 was deposited instead of Compound B obtained in Synthesis Example 2 to form an n-type semiconductor layer having a thickness of 34 nm.

Assessment III

Evaluate the photoelectric conversion efficiency of the sensor according to the embodiment.

The photoelectric conversion efficiency is evaluated from the external quantum efficiency (EQE) measured after leaving the sensor according to the embodiment at 85° C. for 1 hour. External quantum efficiency (EQE) is evaluated by Incident Photon to Current Efficiency (IPCE) equipment at 450 nm (blue), 530 nm (green) and 630 nm (red) wavelengths.

The results are shown in Table 5.

EQE(@3V, %), 85℃ 1h EQE (450 nm) EQE (530 nm) EQE (630 nm) Example 1 4.9 14.2 0.0 Example 2 0.2 7.2 0.1 Example 3 6.4 51.8 0.1 Example 4 3.23 20.7 0.0

Referring to Table 5, it can be seen that the sensor according to the embodiment exhibits improved photoelectric conversion efficiency in the green wavelength spectrum, and the photoelectric conversion efficiency in the green wavelength is higher than the photoelectric conversion efficiency in the blue wavelength or red wavelength. It can be confirmed that the selectivity is high.

Assessment IV

A dark current under a reverse bias voltage of the sensor according to the embodiment is evaluated.

The dark current is evaluated from the dark current density divided by the unit pixel area (0.04 cm2) after measuring the dark current using a current-voltage evaluation device (Keithley K4200 parameter analyzer), and the dark current density is evaluated from the current flowing when -3V reverse bias is applied. .

The results are shown in Table 6.

Dark current (mA/cm2) Example 1 3.6 x 10 ^-6 Example 2 1.8 x 10 ^-6 Example 3 2.3 x 10 ^-6 Example 4 1.8 x 10 ^-6

Referring to Table 6, it can be confirmed that the sensor according to the embodiment exhibits a relatively low dark current when a reverse bias is applied.

simulation evaluation

Regarding the double-layered photoelectric conversion layer of a p-type semiconductor layer and an n-type semiconductor layer, electron mobility rates of various n-type semiconductors belonging to Formula 1 are evaluated by simulation.

The electron mobility was calculated using software (Materials Science Suite, Schrφdinger) assuming a double-layer structure in which 600 molecules of each of the p-type semiconductor in the p-type semiconductor layer and the n-type semiconductor in the n-type semiconductor layer were introduced, and n in the p-type semiconductor layer. Electron hopping to the p-type semiconductor layer and from the n-type semiconductor layer to the p-type semiconductor layer are evaluated by the molecular dynamics method.

After the p-type semiconductor layer absorbs light, excitons are generated, and electrons and holes are generated by charge separation at the interface between the p-type semiconductor layer and the n-type semiconductor layer. and can reach the electrode through the n-type semiconductor layer. At this time, the electron transfer coefficient of electrons moving from the p-type semiconductor layer to the n-type semiconductor layer is defined as K _pn . On the other hand, it is called reverse current that some of the electrons moved to the n-type semiconductor layer return to the p-type semiconductor layer, and electrons due to the reverse current recombine with holes and disappear. At this time, the electron transfer coefficient of electrons moving backward from the n-type semiconductor layer to the p-type semiconductor layer is defined as K _np . Electron transfer coefficients (K _pn , K _np ) are calculated by Density Functional Theory (DFT) using B3LYP/LAC V3P**. The electron transfer rate can be evaluated by log(k _pn /k _np ), and the higher the electron transfer rate, the better the electron transfer.

The results are shown in Table 7.

Evaluation example No. P-type semiconductor N-type semiconductor K _{-pn Knp} log(k _pn /k _np ) One compound 2A compound A 2.7 x 10 ¹² 4.9 x 10 ¹⁰ 1.7 2 compound 2A compound C 2.9 x 10 ¹² 4.4 x 10 ¹⁰ 1.8 3 compound 2A compound E 2.7 x 10 ¹² 4.7 x 10 ⁸ 3.8 4 compound 2A compound F 3.8 x 10 ¹² 1.5 x 10 ⁹ 3.4 5 compound 2A compound G 4.4 x 10 ¹² 2.6 x 10 ⁸ 4.2 6 compound 2A compound H 2.1 x 10 ¹² 5.5 x 10 ⁹ 2.6 7 compound 2A compound I 1.9 x 10 ¹² 2.3 x 10 ⁸ 3.9 8 compound 2A compound J 3.6 x 10 ¹² 8.0 x 10 ⁷ 4.7 9 compound 2A compound K 1.8 x 10 ¹² 1.4 x 10 ⁹ 3.1 10 compound 2A compound L 5.4 x 10 ¹² 1.3 x 10 ¹⁰ 2.6 11 compound 2A compound M 1.6 x 10 ¹² 1.4 x 10 ¹⁰ 2.1 Ref.1 compound 2A Compound Z-2 2.5 x 10 ¹² 1.8 x 10 ¹² 0.1 Ref.2 compound 2A Compound Z-3 3 x 10 ¹² 1.2 x 10 ¹² 0.7 Ref.3 compound 2A Compound Z-4 3.9 x 10 ¹⁰ 4.0 x 10 ¹² -2.0

[Compound E]

[Compound F]

[Compound G]

[Compound H]

[Compound I]

[Compound J]

[Compound K]

[Compound L]

[Compound M]

[Compound Z-2]

[Compound Z-3]

[Compound Z-4]

Referring to Table 7, it can be confirmed that evaluation examples (No. 1 to 11) using various n-type semiconductors belonging to Formula 1 exhibit good electron mobility.

Although the embodiments have been described in detail above, the scope of rights is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts defined in the following claims also fall within the scope of rights.

100, 100a, 100b, 100c: sensor
110: first electrode
120: second electrode
130: photoelectric conversion layer
140, 150: auxiliary layer
160: buffer layer
200: substrate
220: first photodiode
230: second photodiode
300: image sensor
410, 420, 430: light emitting element
1000: sensor built-in display panel
2000: Electronic Devices

Claims (20)

An organic compound represented by Formula 1 below:
[Formula 1]

In Formula 1,
D is a substituted or unsubstituted divalent condensed polycyclic aromatic hydrocarbon group,
A ¹ and A ² are each independently C=X ¹ (X ¹ is O, S, Se, Te or CR ^a R ^b ), a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof Cyclic group including; A substituted or unsubstituted dicyanovinyl group; or a combination thereof, wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, a dicyanovinyl group, or a combination thereof, and R ^a and R ^b are each Exist independently or combine with each other to form a ring,
R ¹ and R ² are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof;
However, a structure in which D is pyrenylene and A ¹ and A ² are each independently an indenyl group including C=X ¹ is excluded.
In paragraph 1,
D is an organic compound which is one of the substituted or unsubstituted divalent condensed polycyclic aromatic hydrocarbon groups listed in Group 1 below:
[Group 1]

,

,

,

,

,

,

,

,

,

,

In the group 1 above,
Two of the carbons constituting each condensed polycyclic aromatic group are connecting points with Formula 1 above.
In paragraph 1,
A ¹ and A ² are each independently a cyclic group represented by Formula 1A, 1B or 1C, or a substituted or unsubstituted dicyanovinyl group, an organic compound:
[Formula 1A] [Formula 1B] [Formula 1C]

In Formulas 1A to 1C,
Ar ¹ is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C2 to C30 heterocyclic group, or these is a fused ring of
Z ¹ and Z ² are each independently O, S, Se, Te or CR ^a R ^b , wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, a cyano group, A dicyanovinyl group or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,
R ^c to R ^h are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkoxy group, A C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof, and R ^c to R ^h are each independently present or two adjacent ones of R ^c to R ^h combine with each other to form a ring;
At least one of R ^c to R ^h is a halogen, a C1 to C30 haloalkyl group, a cyano group, a dicyanovinyl group, or a combination thereof;
* is a connection point with Formula 1 above.
In paragraph 3,
A ¹ and A ² are each independently an organic compound represented by any one of Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10:
[Formula 1A-1] [Formula 1A-2]

[Formula 1A-3] [Formula 1A-4]

[Formula 1B-1] [Formula 1B-2]

[Formula 1B-3] [Formula 1B-4] [Formula 1B-5]

[Formula 1B-6] [Formula 1B-7] [Formula 1B-8]

[Formula 1B-9] [Formula 1B-10]

In Formulas 1A-1 to 1A-4 and 1B-1 to 1B-10,
Z ¹ , Z ² and Z ⁴ are each independently O, S, Se, Te or CR ^a R ^b , wherein R ^a and R ^b are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a carbonyl group, A cyano group, a dicyanovinyl group, or a combination thereof, R ^a and R ^b are each independently present or bonded to each other to form a ring,
Z ³ is N or CR ⁱ ;
G ¹ to G ³ are each independently O, S, Se or Te;
R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof, and R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁵⁶ , R ^56' and R ⁱ combine with each other to form a ring,
n1 to n5 are each independently an integer of 0 to 2;
* is a connection point with Formula 1,
However, when D in Formula 1 is pyrenylene, A ¹ and A ² are not Formula 1A-2 or 1B-1, respectively.
In paragraph 4,
A ¹ and A ² are each independently an organic compound represented by any one of Formulas 1A-1a to 1B-10a:
[Formula 1A-1a] [Formula 1A-2a]

[Formula 1A-3a] [Formula 1A-3b] [Formula 1A-4a]

[Formula 1B-1a] [Formula 1B-1b]

[Formula 1B-1c] [Formula 1B-1d]

[Formula 1B-1e] [Formula 1B-1f]

[Formula 1B-2a] [Formula 1B-2b]

[Formula 1B-2c] [Formula 1B-2d] [Formula 1B-2e]

[Formula 1B-2f] [Formula 1B-2g] [Formula 1B-2h]

[Formula 1B-3a] [Formula 1B-3b] [Formula 1B-3c]

[Formula 1B-3d] [Formula 1B-3e] [Formula 1B-3f]

[Formula 1B-3g] [Formula 1B-3h] [Formula 1B-4a]

[Formula 1B-5a] [Formula 1B-6a] [Formula 1B-6b]

[Formula 1B-6c] [Formula 1B-7a] [Formula 1B-7b]

[Formula 1B-8a] [Formula 1B-9a] [Formula 1B-10a]

In Formulas 1A-1a to 1B-10a,
R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C1 to C30 alkoxy group, A substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof;
R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ are each independently present or two adjacent ones of R ⁵⁰ to R ⁶⁰ , R ^56' and R ⁱ bond to each other to form a ring;
* is a connection point with Formula 1,
However, when D in Chemical Formula 1 is pyrenylene, A ¹ and A ² are represented by Chemical Formulas 1A-1a, 1A-2a, 1B-1a, 1B-1b, 1B-1c, 1B-1d, 1B-1e or 1B-1f, respectively. It's not.
In paragraph 1,
The temperature at which a weight reduction of 10% compared to the initial weight of the organic compound occurs during thermogravimetric analysis at 10 Pa or less is 100 ° C to 400 ° C,
The organic compound having a LUMO energy level of 2.5 to 4.0 eV.
A film comprising the organic compound according to any one of claims 1 to 6.
a first electrode;
a second electrode, and
A photoelectric conversion layer disposed between the first electrode and the second electrode and including the organic compound according to any one of claims 1 to 6.
A sensor comprising a.
In paragraph 8,
The organic compound is an n-type semiconductor,
The photoelectric conversion layer further includes a p-type semiconductor forming a pn junction with the organic compound,
The p-type semiconductor is a sensor represented by Formula 2 below:
[Formula 2]

In Formula 2,
X ² is O, S, Se or Te;
Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,
R ^1a to R ^3a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof;
Ar ^1a , Ar ^2a , R ^1a and R ^2a may each independently exist or two adjacent ones may bond to each other to form a ring.
In paragraph 9,
The p-type semiconductor is a sensor represented by Formula 2A or 2B:
[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,
X ² is O, S, Se or Te;
Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^k R ^l , SiR ^m R ⁿ , GeR ^o R ^p , NR ^q , substituted or unsubstituted C1 to C30 alkyl A rene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;
R ^1a , R ^2a , R ^3a and R ^k to R ^q are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C1 to C30 alkyl group. A thio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof.
Board,
A light emitting element located on the substrate and including a light emitting layer, and
A light absorption sensor disposed on the substrate and including a photoelectric conversion layer
including,
The light emitting element and the light absorption sensor are arranged side by side along the surface direction of the substrate,
The sensor-embedded display panel in which the photoelectric conversion layer includes the organic compound according to any one of claims 1 to 6.
In paragraph 11,
The organic compound is an n-type semiconductor,
The photoelectric conversion layer further includes a p-type semiconductor forming a pn junction with the organic compound,
The p-type semiconductor is a sensor embedded display panel represented by Chemical Formula 2 below:
[Formula 2]

In Formula 2,
X ² is O, S, Se or Te;
Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,
R ^1a to R ^3a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof;
Ar ^1a , Ar ^2a , R ^1a and R ^2a may each independently exist or two adjacent ones may bond to each other to form a ring.
In paragraph 12,
The p-type semiconductor is a sensor embedded display panel represented by Chemical Formula 2A or 2B:
[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,
X ² is O, S, Se or Te;
Ar ² is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from among them;
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^k R ^l , SiR ^m R ⁿ , GeR ^o R ^p , NR ^q , substituted or unsubstituted C1 to C30 alkyl A rene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;
R ^1a , R ^2a , R ^3a and R ^k to R ^q are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C1 to C30 alkyl group. A thio group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or a combination thereof.
In paragraph 11,
The light emitting element includes first, second and third light emitting elements emitting light of different wavelength spectrums,
Wherein the light absorption sensor absorbs light emitted from at least one of the first, second, and third light emitting elements reflected by a recognition target and converts the light into an electrical signal.
In paragraph 11,
The light emitting element and the light absorption sensor each include a common electrode for applying a common voltage to the light emitting element and the light absorption sensor,
The sensor built-in display panel
A first common auxiliary layer continuously formed between the light emitting element and the common electrode and between the light absorption sensor and the common electrode, and
A second common auxiliary layer continuously formed between the light emitting element and the substrate and between the light absorption sensor and the substrate
A sensor embedded display panel further comprising a.
In paragraph 15,
The sensor embedded display panel of claim 1 , wherein a difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the organic compound is 0 to 1.2 eV.
In paragraph 11,
The sensor built-in display panel
a display area for displaying a color; and
Non-display area excluding the above display area
including,
The light absorption sensor is located in the non-display area
Display panel with built-in sensor.
In paragraph 17,
The light emitting element includes a first light emitting element emitting light of a red wavelength spectrum, a second light emitting element emitting light of a green wavelength spectrum, and a third light emitting element emitting light of a blue light emitting spectrum,
The display area is
A plurality of first subpixels displaying red and including the first light emitting element;
A plurality of second subpixels displaying green and including the second light emitting element, and
A plurality of third subpixels displaying blue and including the third light emitting element
including,
The light absorption sensor is positioned between at least two selected from the first subpixel, the second subpixel, and the third subpixel.
An electronic device comprising the sensor according to claim 8 .
An electronic device comprising the sensor embedded display panel according to claim 11 .

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