KR20220147027A - Sensor embedded display panel and electronic device - Google Patents

Abstract

The present invention relates to a sensor-embedded display panel to implement a high-performance sensor and an electronic device including the same. According to the present invention, the sensor-embedded display panel comprises: a substrate; a light emitting element disposed on the substrate and including a light emitting layer; and a light absorption sensor disposed on the substrate and including a light absorption layer arranged in parallel with the light emitting layer along a surface direction of the substrate, wherein the light absorption layer absorbs light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof, the light emitting layer includes a first organic material, and the light absorption layer includes a second organic material, a difference between the sublimation temperatures of the first organic material and the second organic material is 150℃ or less, and the sublimation temperature is a temperature at which a weight loss of 10% compared to the initial weight occurs in thermogravimetric analysis at 10 Pa or less.

Description

SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

The present invention relates to a sensor-embedded display panel and an electronic device.

Recently, there has been an increasing demand for a display device implementing biometric recognition technology to authenticate a person by extracting specific human biometric information or behavioral characteristic information with an automated device, centering on finance, health care, mobile, and the like. Accordingly, a display device having a biometric sensor is being studied.

Such a sensor may be disposed under the display panel or manufactured as a separate module and mounted outside the display panel. However, when the sensor is disposed under the display panel, the performance may be deteriorated because the object must be recognized through the display panel, various films and/or parts, etc., and when the sensor is manufactured and mounted as a separate module, design and usability There are limitations in terms of

An exemplary embodiment provides a sensor-embedded display panel including a sensor capable of improving performance by being integrated with the display panel.

Another embodiment provides an electronic device including the sensor-embedded display panel.

According to one embodiment, it comprises a substrate, a light emitting device positioned on the substrate and including a light emitting layer, and a light absorption sensor including a light absorbing layer positioned on the substrate and arranged side by side with the light emitting layer along a plane direction of the substrate, The light absorbing layer absorbs light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof, the light emitting layer includes a first organic material, and the light absorption layer includes a second organic material, , the difference between the sublimation temperature of the first organic material and the second organic material is 150 ° C. or less, where the sublimation temperature is a temperature at which a weight reduction of 10% compared to the initial weight occurs during thermogravimetric analysis at 10 Pa or less. panel is provided.

The light emitting device may include first, second, and third light emitting devices emitting light of different wavelength spectra, and the light absorption sensor is configured to emit light emitted from at least one of the first, second and third light emitting devices. The light may absorb the light reflected by the recognition target and convert it into an electrical signal.

The sublimation temperature of the second organic material may be about 390° C. or less.

The sublimation temperature of the second organic material may be about 100°C to 390°C.

The energy bandgap of the second organic material may be about 2.5 eV or more.

The second organic material may be a transparent n-type semiconductor.

The light emitting element and the light absorption sensor may include a common electrode for applying a common voltage to the light emitting element and the light absorption sensor, respectively, and the sensor-embedded display panel is disposed between the light emitting layer and the common electrode and between the light absorption layer and the common electrode. A first common auxiliary layer continuously formed between the electrodes may be further included.

A difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the second organic material may be about 1.2 eV or less.

The sensor-embedded display panel may further include a second common auxiliary layer continuously formed between the light emitting layer and the substrate and between the light absorbing layer and the substrate.

The second organic material may be represented by Formula 1 below.

[Formula 1]

In Formula 1,

X ¹ and X ² are each independently O or NR ^a ,

R ¹ to R ⁴ and R ^a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cya anger or a combination thereof.

The second organic material may be represented by the following Chemical Formula 1A or 1B.

[Formula 1A] [Formula 1B]

In Formulas 1A and 1B,

R ¹ to R ⁴ , R ^a1 and R ^a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cyano group, or a combination thereof.

At least one of R ^a1 and R ^a2 may include an electron withdrawn group.

at least one of R ^a1 and R ^a2 is halogen; cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or a combination thereof.

The light absorption layer may further include a third organic material forming a pn junction with the second organic material, and a sublimation temperature between any two of the first organic material, the second organic material, and the third organic material. The difference may be about 150° C. or less, respectively.

The third organic material may be a light absorbing material that selectively absorbs any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum.

The third organic material may be represented by Formula 2 below.

[Formula 2]

In Formula 2,

X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,

Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,

R ^1a to R ^3a and R ^b to R ^e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C3 to C30 heteroaryl group, halogen, cyano group, or a combination thereof,

Ar ^1a , Ar ^2a , R ^1a and R ^2a are each independently present or two adjacent ones are bonded to each other to form a ring.

The third organic material may be represented by the following Chemical Formula 2A or 2B.

[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,

X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,

Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,

Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,

L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^f R ^g , SiR ^h R ⁱ , GeR ^j R ^k , NR ¹ , substituted or unsubstituted C1 to C30 alkyl a lene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;

R ^1a , R ^2a , R ^3a and R ^b to R ¹ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.

The light emitting device may include first, second, and third light emitting devices emitting any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum, and the light absorbing layer includes the first and second light emitting devices. Light of the same wavelength spectrum as light emitted from at least one of the second and third light emitting devices may be absorbed.

The sensor-embedded display panel may include a display area displaying a color and a non-display area excluding the display area, and the light absorption sensor may be located in the non-display area.

The display area displays red and includes a plurality of first sub-pixels including the first light-emitting device, a plurality of second sub-pixels displaying green and including the second light-emitting device, and blue and displaying the third A plurality of third sub-pixels including a light emitting device may be included, and the light absorption sensor may be positioned between at least two selected from the first sub-pixel, the second sub-pixel, and the third sub-pixel.

According to another exemplary embodiment, a first sub-pixel including a display area displaying a color and a non-display area other than the display area, the display area displaying a first color and including a first light emitting device, and a second color and a second sub-pixel that displays and includes a second light-emitting device, and a third sub-pixel that displays a third color and includes a third light-emitting device, wherein the non-display area includes the first sub-pixel and the second sub-pixel. a light absorption sensor positioned between at least two of the second sub-pixel and the third sub-pixel, wherein the first, second, and third light emitting devices emit light having an emission spectrum corresponding to the first, second, and third colors. Each of the first, second and third light emitting layers for emitting a light absorption sensor includes a p-type semiconductor and an n-type semiconductor forming a pn junction, and absorbs the light reflected by the recognition target and converts it into an electrical signal wherein the sublimation temperature of the organic material and the n-type semiconductor included in the first, second, and third light emitting layers is about 390° C. or less, respectively, wherein the sublimation temperature is 10 Pa or less at the initial thermogravimetric analysis. It is a temperature at which a weight reduction of 10% relative to the weight occurs, and the difference in sublimation temperature between the organic material included in the first, second, and third light emitting devices and the n-type semiconductor is about 150° C. or less. Provide a sensor-embedded display panel do.

The first, second and third light emitting devices and the light absorption sensor have a common electrode for applying a common voltage to the first, second and third light emitting devices and the light absorption sensor, and the first, second and third light emitting sensors and a first common auxiliary layer positioned between the light emitting device and the common electrode and between the light absorption sensor and the common electrode, wherein the LUMO energy level of the first common auxiliary layer is the LUMO energy level of the light emitting layer and the common The electrode may have a work function, and a difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the n-type semiconductor may be about 1.2 eV or less.

The n-type semiconductor may be represented by Formula 1, and the p-type semiconductor may be represented by Formula 2 below.

The n-type semiconductor may be represented by Formula 1A or 1B.

The p-type semiconductor may be represented by Formula 2A or 2B.

According to another embodiment, an electronic device including the sensor-embedded display panel is provided.

According to another embodiment, a pair of electrodes, and a light absorbing layer positioned between the pair of electrodes, wherein the light absorbing layer is any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum It includes a p-type semiconductor that selectively absorbs light of, and an n-type semiconductor that forms a pn junction with the p-type semiconductor, wherein the n-type semiconductor provides a light absorption sensor represented by Chemical Formula 1A or 1B.

The p-type semiconductor may be represented by Formula 2 above.

The p-type semiconductor may be represented by Formula 2A or 2B.

An electronic device including the light absorption sensor is provided.

By being integrated with the display panel, it is possible to realize a high-performance sensor while improving design and usability.

1 is a plan view showing an example of a sensor-embedded display panel according to an embodiment;
2 is a cross-sectional view illustrating an example of a sensor-embedded display panel according to an embodiment;
3 is a cross-sectional view illustrating another example of a sensor-embedded display panel according to an embodiment;
4 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an example;
5 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to an embodiment.

Hereinafter, the embodiments will be described in detail so that those of ordinary skill in the art can easily implement them. However, the actually applied structure may be implemented in several different forms and is not limited to the embodiments described herein.

In order to clearly express various layers and regions in the drawings, the thicknesses are enlarged. When a part of a layer, film, region, plate, etc. is said to be “on” another part, it includes not only cases where it is “directly on” another part, but also cases where there is another part in between. Conversely, when we say that a part is "just above" another part, we mean that there is no other part in the middle.

In order to clearly describe the present embodiment in the drawings, parts irrelevant to the description are omitted, and the same reference numerals are used for the same or similar components throughout the specification.

Hereinafter, the terms 'lower' and 'upper' are only for convenience of description and do not limit the positional relationship.

Unless otherwise defined below, 'substituted' means that a hydrogen atom in a compound is halogen, hydroxy group, nitro group, cyano group, amino group, azido group, amidino group, hydrazino group, hydrazono group, carbonyl group, carba Wyl group, thiol group, ester group, carboxyl group or its salt, sulfonic acid group or its salt, phosphoric acid or its salt, C1 to C30 alkyl group, C2 to C30 alkenyl group, C2 to C30 alkynyl group, C6 to C30 aryl group, C7 to C30 aryl Alkyl group, C1 to C30 alkoxy group, C1 to C20 heteroalkyl group, C3 to C20 heterocyclic group, C3 to C20 heteroarylalkyl group, C3 to C30 cycloalkyl group, C3 to C15 cycloalkenyl group, C6 to C15 cycloalkynyl group, C3 to It means substituted with a substituent selected from a C30 heterocycloalkyl group and combinations thereof.

In addition, unless otherwise defined below, 'hetero' means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si and P.

Hereinafter, unless otherwise defined, an energy level is a highest occupied molecular orbital (HOMO) energy level or a lowest unoccupied molecular orbital (LUMO) energy level.

Hereinafter, unless otherwise defined, a workfunction or an energy level is expressed as an absolute value from a vacuum level. In addition, a deep, high, or high work function or energy level means that the absolute value is large with the vacuum level set to '0eV', and shallow, low, or small work function or energy level is absolute with the vacuum level set to '0eV'. It means that the value is small. Also, the difference between the work function and/or the energy level may be a value obtained by subtracting a small absolute value from a large absolute value.

Unless otherwise defined below, the HOMO energy level is the amount of photoelectrons emitted according to energy by irradiating UV light on a thin film using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). can be evaluated

Unless otherwise defined below, the LUMO energy level is obtained by obtaining the energy bandgap using a UV-Vis spectrometer (Shimadzu Corporation), and then calculating the LUMO energy level from the energy bandgap and the already measured HOMO energy level. can

Hereinafter, a sensor embedded display panel according to an exemplary embodiment will be described.

A sensor-embedded display panel according to an embodiment may be a display panel capable of performing a display function and a recognition function (eg, a biometric function), and an in-cell in which a sensor performing a recognition function (eg, a biometric function) is embedded in the display panel. It may be an (in-cell) type display panel.

1 is a plan view illustrating an example of a sensor-embedded display panel according to an exemplary embodiment, and FIG. 2 is a cross-sectional view illustrating an example of a sensor-embedded display panel according to an exemplary embodiment.

1 and 2 , the sensor-embedded display panel 1000 according to an exemplary embodiment includes a plurality of sub-pixels PX displaying different colors. The plurality of sub-pixels PX may display at least three primary colors, for example, the first sub-pixel PX1 displaying different first, second, and third colors selected from red, green, and blue. ), a second sub-pixel PX2 and a third sub-pixel PX3. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, the first sub-pixel PX1 may be a red sub-pixel displaying red, and the second sub-pixel PX2 may be green. may be a green sub-pixel displaying , and the third sub-pixel PX3 may be a blue sub-pixel displaying blue. However, the present invention is not limited thereto and may further include an auxiliary sub-pixel (not shown) such as a white sub-pixel.

The plurality of sub-pixels PX including the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 constitute one unit pixel UP along a row and/or column. It can be arranged repeatedly. In FIG. 1 , a structure including one first sub-pixel PX1 , two second sub-pixels PX2 , and one third sub-pixel PX3 in the unit pixel UP is exemplarily illustrated, but the present invention is limited thereto. and may include at least one first sub-pixel PX1 , at least one second sub-pixel PX2 , and at least one third sub-pixel PX3 . Although the drawing shows a pentile type arrangement as an example, the arrangement is not limited thereto and the arrangement of the sub-pixels PX may be varied. An area occupied by the plurality of sub-pixels PX and displaying a color by the plurality of sub-pixels PX may be a display area DA for displaying an image.

Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a light emitting element. For example, the first sub-pixel PX1 may include a first light emitting device 210 capable of emitting light having a wavelength spectrum of a first color, and the second sub-pixel PX2 may have a wavelength spectrum of a second color. The second light emitting device 220 capable of emitting light of can However, the present invention is not limited thereto, and at least one of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 is a combination of the first color, the second color, and the third color, that is, a white wavelength spectrum. The first color, the second color, or the third color may be displayed through a color filter (not shown) including a light emitting element emitting the light of the present invention.

The sensor-embedded display panel 1000 according to an exemplary embodiment includes a light absorption sensor 300 . The light absorption sensor 300 may be disposed in a non-display area (NDA). The non-display area NDA is an area other than the display area DA, in which the first sub-pixel PX1 , the second sub-pixel PX2 , the third sub-pixel PX3 and optionally the auxiliary sub-pixel are not disposed. It can be an area. The light absorption sensor 300 may be disposed between at least two selected from the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 , and may be disposed in the display area DA. , the second and third light emitting devices 210 , 220 , and 230 may be disposed in parallel with each other.

The light absorption sensor 300 may be an optical type recognition sensor (eg, a biometric sensor), and may be generated from at least one of the first, second, and third light emitting devices 210 , 220 , and 230 disposed in the display area DA. The emitted light may absorb light reflected by a recognition target 40 such as a living body, a tool, or an object, and may be converted into an electrical signal. Here, the living body may be a finger, a fingerprint, a palm, an iris, a face, and/or a wrist, but is not limited thereto. The light absorption sensor 300 may be, for example, a fingerprint sensor, an illumination sensor, an iris sensor, a distance sensor, a blood vessel distribution sensor, and/or a heart rate sensor, but is not limited thereto.

The light absorption sensor 300 may be disposed on the same plane as the first, second, and third light emitting devices 210 , 220 , and 230 on the substrate 110 , and may be embedded in the display panel 1000 .

Referring to FIG. 2 , the sensor-embedded display panel 1000 includes a substrate 110 ; a thin film transistor 120 formed on the substrate 110 ; an insulating layer 140 formed on the thin film transistor 120 ; a pixel defining layer 150 formed on the insulating layer 140 ; The first, second, or third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 are included in the space partitioned by the pixel defining layer 150 .

The substrate 110 may be a light-transmitting substrate, for example, a glass substrate or a polymer substrate. The polymer substrate is, for example, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, polyorganosiloxane, styrene-ethylene-butylene-styrene, polyurethane , polyacrylic, polyolefin, or a combination thereof, but is not limited thereto.

The plurality of thin film transistors 120 are formed on the substrate 110 . One or more thin film transistors 120 may be included in each sub-pixel PX, and may include, for example, at least one switching thin film transistor and/or at least one driving thin film transistor. The substrate 110 on which the thin film transistor 120 is formed may be referred to as a thin film transistor substrate or a thin film transistor backplane.

The insulating layer 140 may cover the substrate 110 and the thin film transistor 120 , and may be formed on the entire surface of the substrate 110 . The insulating layer 140 may be a planarization film or a passivation film, and may include an organic insulating material, an inorganic insulating material, an organic/inorganic insulating material, or a combination thereof, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, inorganic insulating materials such as aluminum nitride, aluminum oxynitride, or combinations thereof; organic insulating materials such as polyimides, polyamides, polyamideimides, polyacrylates, or combinations thereof; Alternatively, it may include an organic-inorganic insulating material such as polyorganosiloxane, polyorganosilazane, or a combination thereof. The insulating layer 140 includes a plurality of contact holes 141 for connecting the first, second and third light emitting devices 210 , 220 , 230 and the thin film transistor 120 , the light absorption sensor 300 and the thin film transistor ( It may have a plurality of contact holes 142 for electrically connecting the 120 .

A pixel definition layer 150 may also be formed on the entire surface of the substrate 110 , and may be positioned between adjacent sub-pixels PX to partition each sub-pixel PX. The pixel defining layer 150 may have a plurality of openings 151 positioned in each sub-pixel PX, and the first, second, and third light emitting devices 210 , 220 , 230 and Any one of the light absorption sensor 300 may be located.

The first, second, and third light emitting devices 210 , 220 , and 230 are formed on the substrate 110 (or the thin film transistor substrate) and are repeatedly arranged along the plane direction (eg, the xy direction) of the substrate 110 . has been As described above, the first, second, and third light emitting devices 210 , 220 , and 230 may be included in the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 , respectively. , first, second, and third light emitting devices 210 , 220 , and 230 may be electrically connected to separate thin film transistors 120 to be independently driven.

The first, second, and third light emitting devices 210 , 220 , and 230 may each independently emit one light selected from a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and a combination thereof. For example, the first light emitting device 210 may emit light of a red wavelength spectrum, the second light emitting device 220 may emit light of a green wavelength spectrum, and the third light emitting device 230 may emit light of a blue wavelength spectrum. of light can be emitted. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may have a maximum emission wavelength (λ _max ) at about 600 nm or more and less than 750 nm, about 500 nm to 600 nm, and about 400 nm or more and less than 500 nm, respectively.

The first, second, and third light emitting devices 210 , 220 , and 230 may be, for example, light emitting diodes, for example, organic light emitting diodes including an organic material.

The light absorption sensor 300 is formed on the substrate 110 (or the thin film transistor substrate), and may be randomly or regularly arranged along the plane direction (eg, the xy direction) of the substrate 110 . As described above, the light absorption sensor 300 may be located in the non-display area NDA, and may be connected to a separate thin film transistor 120 to be independently driven. The light absorption sensor 300 may absorb light of the same wavelength spectrum as light emitted from at least one of the first, second, and third light emitting devices 210 , 220 , 230 and convert it into an electrical signal, for example, a red wavelength The spectrum, the green wavelength spectrum, the blue wavelength spectrum, the infrared wavelength spectrum, and combinations thereof may absorb light and convert it into an electrical signal. The light absorption sensor 300 may be, for example, a photoelectric diode, for example, an organic photoelectric diode including an organic material.

Each of the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 includes pixel electrodes 211 , 221 , 231 , 310 ; a common electrode 320 facing the pixel electrodes 211 , 221 , 231 , and 310 and to which a common voltage is applied; The light emitting layers 212 , 222 , 232 or the light absorbing layer 330 , the first common auxiliary layer 340 , and the second common auxiliary layer are positioned between the pixel electrodes 211 , 221 , 231 , and 310 and the common electrode 320 . (350).

The first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 are arranged side by side along the surface direction (eg, xy direction) of the substrate 110 , and a common electrode 320 formed on the front surface of the substrate 110 . ), the first common auxiliary layer 340 and the second common auxiliary layer 350 may be shared.

The common electrode 320 is continuously formed on the light emitting layers 212 , 222 , and 232 and the light absorbing layer 330 , and is substantially formed on the entire surface of the substrate 110 . The common electrode 320 may apply a common voltage to the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 .

The first common auxiliary layer 340 is positioned between the light emitting layers 212 , 222 , 232 and the light absorbing layer 330 and the common electrode 320 , and is disposed on top of the light emitting layers 212 , 222 , 232 and the light absorbing layer 330 , and It may be continuously formed under the common electrode 320 .

The first common auxiliary layer 340 may be a charge auxiliary layer (eg, an electron auxiliary layer) that facilitates injection and/or movement of charges (eg, electrons) from the common electrode 320 to the emission layers 212 , 222 , and 232 . have. For example, the LUMO energy level of the first common auxiliary layer 340 may be located between the LUMO energy level of the emission layers 212 , 222 , and 232 and the work function of the common electrode 320 , and the work function of the common electrode 320 . , the LUMO energy level of the first common auxiliary layer 340 and the LUMO energy level of the emission layers 212 , 222 , and 232 may be sequentially shallow. On the other hand, the LUMO energy level of the first common auxiliary layer 340 may be shallower than the LUMO energy level of the light absorption layer 330 and the work function of the common electrode 320 , respectively.

The first common auxiliary layer 340 may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof satisfying the LUMO energy level, for example, a metal halide such as LiF, NaCl, CsF, RbCl and RbI; lanthanide metals such as Yb; metal oxides such as Li ₂ O and BaO; Liq(Lithium quinolate), Alq3(Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'- (pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5 -Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl) -1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5 -diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2) -methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq ₂ (berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2) -yl)anthracene), BmPyPhB(1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), or a combination thereof, but is not limited thereto. 340) may be one or two or more floors.

The second common auxiliary layer 350 is positioned between the light emitting layers 212 , 222 , 232 and the light absorbing layer 330 and the substrate 110 , and among them, the light emitting layers 212 , 222 , 232 and the light absorbing layer 330 , It may be positioned between the pixel electrodes 211 , 221 , 231 , and 310 . The second common auxiliary layer 350 may be continuously formed on the lower portions of the light emitting layers 212 , 222 , and 232 and the light absorbing layer 330 , and on the upper portions of the pixel electrodes 211 , 221 , 231 , and 310 .

The second common auxiliary layer 350 is a charge auxiliary layer (eg, holes) that facilitates injection and/or movement of charges (eg, holes) from the pixel electrodes 211 , 221 , and 231 to the emission layers 212 , 222 , and 232 . auxiliary layer). For example, the HOMO energy level of the second common auxiliary layer 350 may be located between the HOMO energy level of the emission layers 212 , 222 , and 232 and the work function of the pixel electrodes 211 , 221 , and 231 , and the pixel electrode 211 . , 221 and 231 , the HOMO energy level of the second common auxiliary layer 350 , and the HOMO energy level of the emission layers 212 , 222 , and 232 may be sequentially deepened.

The second common auxiliary layer 350 may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof satisfying the HOMO energy level, for example, a phthalocyanine compound such as copper phthalocyanine; DNTPD(N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4' ,4"-[tris(3-methylphenyl)phenylamino]triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N, -(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)), PANI/DBSA(Polyaniline/Dodecylbenzenesulfonic acid), PANI/CSA( Polyaniline/Camphor sulfonicacid), PANI/PSS(Polyaniline/Poly(4-styrenesulfonate)), NPB(N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), triphenylamine Polyether ketone (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium [Tetrakis (pentafluorophenyl) borate], HAT-CN (dipyrazino [2,3-f: 2',3'-h] quinoxaline-2,3,6 ,7,10,11-hexacarbonitrile), N-phenylcarbazole, carbazole derivatives such as polyvinylcarbazole, fluorine derivatives, TPD (N,N'-bis(3-methylphenyl)-N, Triphenylamine derivatives such as N'-diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA(4,4',4"-tris(N-carbazolyl)triphenylamine), NPB(N ,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC(4,4′-Cyclohexylidene) bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD(4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP(1, 3-Bis(N-carbazolyl)benzene) or a combination thereof, but is not limited thereto. The second common auxiliary layer 350 may have one or two or more layers.

Each of the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 includes pixel electrodes 211 , 221 , 231 , and 310 facing the common electrode 320 . One of the pixel electrodes 211 , 221 , 231 , and 310 and the common electrode 320 is an anode and the other is a cathode. For example, the pixel electrodes 211 , 221 , 231 , and 310 may be an anode and the common electrode 320 may be a cathode. The pixel electrodes 211 , 221 , 231 , and 310 are separated for each sub-pixel PX, and may be electrically connected to a separate thin film transistor 120 to be independently driven.

The pixel electrodes 211 , 221 , 231 , and 310 and the common electrode 320 may each be a light-transmitting electrode or a reflective electrode, and for example, at least one of the pixel electrodes 211 , 221 , 231 , 310 and the common electrode 320 may be It may be a light-transmitting electrode.

The light-transmitting electrode may be a transparent electrode or a transflective electrode, the transparent electrode may have a transmittance of about 85% or more, about 90% or more, or about 95% or more, and the transflective electrode may have a transmittance of about 30% or more and less than about 85%, about 40 % to about 80% or from about 40% to 75%. The transparent electrode and the transflective electrode may include, for example, at least one of an oxide conductor, a carbon conductor, and a metal thin film. Oxide conductors include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO) and aluminum. It may be at least one selected from aluminum zinc oxide (AZO), the carbon conductor may be at least one selected from graphene and carbon nanomaterials, and the metal thin film may be aluminum (Al), magnesium (Mg), or silver (Ag). , gold (Au), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), alloys thereof, or a combination thereof.

The reflective electrode may include a reflective layer having a transmittance of about 5% or less and/or a reflectance of about 80% or more, and the reflective layer may include an optically opaque material. The optically opaque material may include a metal, a metal nitride, or a combination thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr) , nickel (Ni), alloys thereof, nitrides thereof (eg TiN), or a combination thereof, but is not limited thereto. The reflective electrode may be made of a reflective layer or may have a laminated structure of a reflective layer/transmissive layer or a transmissive layer/reflective layer/transmissive layer, and the reflective layer may have one or two or more layers.

For example, when the pixel electrodes 211 , 221 , 231 , and 310 are light-transmitting electrodes and the common electrode 320 is a reflective electrode, the sensor-embedded display panel 1000 emits light toward the substrate 110 . bottom emission type display panel). For example, when the pixel electrodes 211 , 221 , 231 , and 310 are reflective electrodes and the common electrode 320 is a light-transmitting electrode, the sensor-embedded display panel 1000 emits light to the opposite side of the substrate 110 . It may be a top emission type display panel. For example, when the pixel electrodes 211 , 221 , 231 , and 310 and the common electrode 320 are light-transmitting electrodes, the sensor-embedded display panel 1000 may be a both side emission type display panel.

For example, the pixel electrodes 211 , 221 , 231 , and 310 may be reflective electrodes and the common electrode 320 may be a transflective electrode. In this case, the sensor-embedded display panel 1000 has a microcavity structure. can form. The microresonant structure is repeatedly reflected between the reflective electrode and the transflective electrode spaced apart by a predetermined optical length (eg, the distance between the transflective electrode and the reflective electrode) to enhance light of a predetermined wavelength spectrum to improve optical properties. can be improved

For example, among the light emitted from the light emitting layers 212 , 222 , and 232 of the first, second, and third light emitting devices 210 , 220 , 230 , light having a predetermined wavelength spectrum repeatedly passes between the transflective electrode and the reflective electrode. The light of the wavelength spectrum corresponding to the resonance wavelength of the fine resonance among the modified light may be reflected and modified to exhibit amplified emission characteristics in a narrow wavelength region. Accordingly, the sensor-embedded display panel 1000 may express a color with high color purity.

For example, light of a predetermined wavelength spectrum among the light incident on the absorption sensor 300 may be modified by being repeatedly reflected between the transflective electrode and the reflective electrode, and the wavelength spectrum corresponding to the resonance wavelength of the fine resonance among the modified light. The light may be enhanced to exhibit amplified photoelectric conversion characteristics in a narrow wavelength region. Accordingly, the light absorption sensor 300 may exhibit high photoelectric conversion characteristics in a narrow wavelength region.

Each of the first, second, and third light emitting devices 210 , 220 , and 230 includes light emitting layers 212 , 222 , and 232 positioned between the pixel electrodes 211 , 221 , and 231 and the common electrode 320 . The light emitting layer 212 included in the first light emitting device 210, the light emitting layer 222 included in the second light emitting device 220, and the light emitting layer 232 included in the third light emitting device 230 have the same or different wavelengths. It may emit a spectrum of light, such as light in a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or a combination thereof.

For example, when the first light emitting device 210 , the second light emitting device 220 , and the third light emitting device 230 are a red light emitting device, a green light emitting device, and a blue light emitting device, respectively, the first light emitting device 210 includes The light emitting layer 212 may be a red light emitting layer emitting light of a red wavelength spectrum, and the light emitting layer 222 included in the second light emitting device 220 may be a green light emitting layer emitting light of a green wavelength spectrum, and the third light emitting device The light emitting layer 232 included in the 230 may be a blue light emitting layer emitting light of a blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may have a maximum emission wavelength greater than about 600 nm and less than 750 nm, about 500 nm to 600 nm, and about 380 nm or more and less than 500 nm, respectively.

For example, when at least one of the first light emitting device 210 , the second light emitting device 220 , and the third light emitting device 230 is a white light emitting device, the light emitting layer of the white light emitting device may emit light of a visible ray wavelength spectrum. For example, it may emit light in a wavelength spectrum of about 380 nm to less than 750 nm, about 400 nm to 700 nm, or about 420 nm to 700 nm.

The emission layers 212 , 222 , and 232 may include at least one host material and a fluorescent or phosphorescent dopant, and at least one of the at least one host material and the fluorescent or phosphorescent dopant may be an organic material. The organic material may include, for example, a low molecular weight organic material, such as a vapor deposition organic material.

The light absorption sensor 300 includes a light absorption layer 330 positioned between the pixel electrode 310 and the common electrode 320 . The light absorbing layer 330 is disposed in parallel with the light emitting layers 212 , 222 , 232 of the first, second and third light emitting devices 210 , 220 , 230 along the surface direction (eg, xy direction) of the substrate 110 . In some embodiments, the light absorbing layer 330 and the light emitting layers 212 , 222 , and 232 may be positioned on the same plane.

The light absorbing layer 330 may be a photoelectric conversion layer that absorbs light of a predetermined wavelength spectrum and converts it into an electrical signal, and emits light emitted from at least one of the first, second and third light emitting devices 210 , 220 , 230 described above. The light may absorb the light reflected by the recognition target 40 and convert it into an electrical signal. The light absorption layer 330 may absorb light of, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof.

For example, the light absorption layer 330 may selectively absorb light of a red wavelength spectrum having a maximum absorption wavelength greater than about 600 nm and less than 750 nm, and the first, second and third light emitting devices 210 , 220 , 230 . Light emitted from the medium red light emitting device may absorb light reflected by the recognition target 40 .

For example, the light absorbing layer 330 may selectively absorb light of a green wavelength spectrum having a maximum absorption wavelength of about 500 nm to 600 nm, and among the first, second and third light emitting devices 210 , 220 , 230 . Light emitted from the green light emitting device may absorb light reflected by the recognition target 40 .

For example, the light absorbing layer 330 may selectively absorb light of a blue wavelength spectrum having a maximum absorption wavelength of about 380 nm or more and less than 500 nm, and the first, second and third light emitting devices 210 , 220 , 230 . Light emitted from the medium blue light emitting device may absorb light reflected by the recognition target 40 .

For example, the light absorbing layer 330 may absorb light of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, that is, light of a visible light wavelength spectrum of about 380 nm or more and less than 750 nm, and the first, second and second 3 A combination of the light emitted from the light emitting devices 210 , 220 , and 230 may absorb the light reflected by the recognition target 40 .

The light absorption layer 330 may include a p-type semiconductor and/or an n-type semiconductor for photoelectric conversion of the absorbed light. The p-type semiconductor and the n-type semiconductor may form a pn junction, generate excitons by receiving light from the outside, and then separate the generated excitons into holes and electrons. Each of the p-type semiconductor and the n-type semiconductor may be one or two or more, and at least one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material that absorbs light of at least a part of a wavelength spectrum of visible light. For example, any one of the p-type semiconductor and the n-type semiconductor may be a light absorbing material that absorbs light of at least a part of the visible ray wavelength spectrum, and the other of the p-type semiconductor and the n-type semiconductor has a visible ray wavelength spectrum. It may be a transparent material that does not substantially absorb light. The transparent material may have a wide energy bandgap so as not to substantially absorb light in the visible wavelength spectrum, for example, may have an energy bandgap of about 2.5 eV or more. The energy bandgap of the transparent material may be, for example, about 2.5 eV to 6.0 eV within the above range.

For example, the p-type semiconductor may be a light absorbing material that absorbs light of at least a part of a wavelength spectrum of visible light, and the n-type semiconductor may be a transparent material. For example, the p-type semiconductor may be a light absorbing material that absorbs light in the entire visible ray wavelength spectrum, and the n-type semiconductor may be a transparent material. For example, the p-type semiconductor may be a light absorbing material that selectively absorbs any one or two of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum, and the n-type semiconductor may be a transparent material.

The light absorption layer 330 may include an organic material, and at least one of the p-type semiconductor and the n-type semiconductor may be an organic material. For example, at least one of the p-type semiconductor and the n-type semiconductor may include a low molecular weight organic material, for example, a vapor deposition organic material. For example, the p-type semiconductor and the n-type semiconductor may each be a low molecular weight organic material, for example, each may be a vapor deposition organic material.

As described above, the light absorbing layer 330 may be disposed side by side with the light emitting layers 212 , 222 , and 232 along the plane direction (eg, xy direction) of the substrate 110 , and the light emitting layers 212 , 222 , and 232 are on the same plane. can be located in For example, the organic material (hereinafter referred to as a 'first organic material') included in the emission layers 212 , 222 , and 232 and the organic material (hereinafter referred to as a 'second organic material') included in the light absorption layer 330 are Each may be a low molecular weight organic material and each may be a vapor deposition organic material.

The first organic material may be one of at least one host material and a fluorescent or phosphorescent dopant included in the emission layers 212 , 222 , and 232 , and the second organic material may be one of a p-type semiconductor and an n-type semiconductor. For example, the first organic material may be one of at least one host material and a fluorescent or phosphorescent dopant included in the emission layers 212 , 222 , and 232 , and the second organic material may be an n-type semiconductor. For example, the first organic material may be one of at least one host material and a fluorescent or phosphorescent dopant included in the emission layers 212 , 222 , and 232 , and the second organic material is a transparent n material having, for example, an energy bandgap of about 2.5 eV or more. It may be a type semiconductor.

For example, each of the first organic material and the second organic material may be an organic material that can be vacuum-deposited, for example, a sublimable organic material that can be vacuum-deposited by sublimation. Sublimable organic materials can be identified by thermogravimetric analysis (TGA), organic materials that lose weight with increasing temperature and lose weight by at least about 50% of their initial weight without substantial decomposition or polymerization. can be

For example, the first organic material and the second organic material may be an organic material that can be vacuum-deposited. For this purpose, the first organic material and the second organic material are subjected to thermogravimetric analysis at a pressure of, for example, about 10 Pa or less, for example, 10 relative to the initial weight. The temperature at which weight reduction of % occurs (hereinafter referred to as “sublimation temperature”) may be within a predetermined range.

For example, the difference between the sublimation temperature of the first organic material and the second organic material may be about 150 ° C. or less, and within the above range, for example, about 130 ° C. or less, about 120 ° C. or less, about 110 ° C. or less, about 100 ° C. or less, about 90 °C or less, about 80 °C or less, about 70 °C or less, about 60 °C or less, about 50 °C or less, about 40 °C or less, about 30 °C or less, about 20 °C or less, about 15 °C or less, or about 10 °C or less and within the above range 0 °C to about 150 °C, 0 °C to about 130 °C, 0 °C to about 120 °C, 0 °C to about 110 °C, 0 °C to about 100 °C, 0 °C to about 90 °C, 0 °C to about 80 °C, 0 °C to about 70 °C, 0 °C to about 60 °C, 0 °C to about 50 °C, 0 °C to about 40 °C, 0 °C to about 30 °C, 0 °C to about 20 °C, 0 °C to about 15 °C, 0 °C to about 10 °C, about 2 °C to about 150 °C, about 2 °C to about 130 °C, about 2 °C to about 120 °C, about 2 °C to about 110 °C, about 2 °C to about 100 °C , from about 2 °C to about 90 °C, from about 2 °C to about 80 °C, from 2 °C to about 70 °C, from about 2 °C to about 60 °C, from about 2 °C to about 50 °C, from about 2 °C to about 40 °C, about 2 °C to about 30 °C, from about 2 °C to about 20 °C, from about 2 °C to about 15 °C, or from about 2 °C to 10 °C.

For example, the sublimation temperature of the first organic material and the second organic material may be about 390° C. or less, respectively, and within the above range, about 370° C. or less, about 350° C. or less, about 340° C. or less, about 330° C. or less, about 320 ℃ or less, about 310 °C or less, about 300 °C or less, about 290 °C or less, about 280 °C or less, about 270 °C or less, or about 250 °C or less, about 100 °C to 390 °C, about 100 °C to 370 °C, about 100 °C to 350 °C, about 100 °C to 340 °C, about 100 °C to 330 °C, about 100 °C to 320 °C, about 100 °C to 310 °C, about 100 °C to 300 °C, about 100 °C to 290 °C, about 100 °C to 280 °C, about 100 °C to 270 °C, about 100 °C to 250 °C, about 150 °C to 390 °C, about 150 °C to 370 °C, about 150 °C to 350 °C, about 150 °C to 340 °C, about 150 °C to 330 °C, about 150 °C to 320 °C, about 150 °C to 310 °C, about 150 °C to 300 °C, about 150 °C to 290 °C, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150 °C to It may be 250°C.

The light absorption layer 330 may further include a third organic material different from the second organic material. For example, when the second organic material is an n-type semiconductor, the third organic material may be a p-type semiconductor. The third organic material may also be, for example, a low molecular weight organic material and may be, for example, a vapor deposition organic material.

For example, the first organic material, the second organic material, and the third organic material may each be an organic material that can be vacuum-deposited, for example, a sublimable organic material that can be vacuum-deposited by sublimation.

For example, the first organic material, the second organic material, and the third organic material may be organic materials that can be vacuum deposited in the same chamber. For example, the second organic material and the third organic material may be co-deposited or sequentially deposited. Accordingly, the difference between the sublimation temperature of the first organic material, the second organic material, and the third organic material may be about 150° C. or less, and within the above range, for example, about 130° C. or less, about 120° C. or less, about 110° C. or less, about 100 °C or less, about 90 °C or less, about 80 °C or less, about 70 °C or less, about 60 °C or less, about 50 °C or less, about 40 °C or less, about 30 °C or less, about 20 °C or less, about 15 °C or less, or about may be 10 °C or less, within the above ranges 0 °C to about 150 °C, 0 °C to about 130 °C, 0 °C to about 120 °C, 0 °C to about 110 °C, 0 °C to about 100 °C, 0 °C to about 90 °C °C, 0 °C to about 80 °C, 0 °C to about 70 °C, 0 °C to about 60 °C, 0 °C to about 50 °C, 0 °C to about 40 °C, 0 °C to about 30 °C, 0 °C to about 20 °C , 0 °C to about 15 °C, 0 °C to about 10 °C, about 2 °C to about 150 °C, about 2 °C to about 130 °C, about 2 °C to about 120 °C, about 2 °C to about 110 °C, about 2 °C to about 100 °C, from about 2 °C to about 90 °C, from about 2 °C to about 80 °C, from 2 °C to about 70 °C, from about 2 °C to about 60 °C, from about 2 °C to about 50 °C, from about 2 °C to about 40 °C °C, from about 2 °C to about 30 °C, from about 2 °C to about 20 °C, from about 2 °C to about 15 °C, or from about 2 °C to 10 °C.

For example, the sublimation temperature of the first organic material, the second organic material, and the third organic material may be about 390° C. or less, respectively, and within the above range, about 370° C. or less, about 350° C. or less, about 340° C. or less, about 330° C. ℃ or less, about 320 °C or less, about 310 °C or less, about 300 °C or less, about 290 °C or less, about 280 °C or less, about 270 °C or less, or about 250 °C or less, about 100 °C to 390 °C, about 100 °C or less to 370 °C, about 100 °C to 350 °C, about 100 °C to 340 °C, about 100 °C to 330 °C, about 100 °C to 320 °C, about 100 °C to 310 °C, about 100 °C to 300 °C, about 100 °C to 290 °C, about 100 °C to 280 °C, about 100 °C to 270 °C, about 100 °C to 250 °C, about 150 °C to 390 °C, about 150 °C to 370 °C, about 150 °C to 350 °C, about 150 °C to 340 °C °C, about 150 °C to 330 °C, about 150 °C to 320 °C, about 150 °C to 310 °C, about 150 °C to 300 °C, about 150 °C to 290 °C, about 150 °C to 280 °C, about 150 °C to 270 °C or about 150°C to 250°C.

For example, the first organic material may be a known material that may be included in the emission layers 212 , 222 , and 232 , for example, perylene; rubrene; 4-(dicyanomethylene)-2-methyl-6-[p-(dimethylamino)styryl]-4H-pyran; coumarin or a derivative thereof; carbazole or a derivative thereof; TPBi(2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); TBADN(2-t-butyl-9,10-di(naphth-2) -yl)anthracene); AND(9,10-di(naphthalene-2-yl)anthracene);CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl);TCTA(4,4) ',4"-tris(carbazol-9-yl)-triphenylamine); TPBi(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene); TBADN(3-tert-butyl-9,10- di(naphth-2-yl)anthracene);DSA(distyrylarylene);CDBP(4,4′'-dimethyl-biphenyl);MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene); TCP(1,3,5-Tris(carbazol-9-yl)benzene); Alq3(tris(8-hydroxyquinolino)lithium); Pt, Os, Ti, Zr, Hf, Eu, Tb, Tm, Rh, Ru, It may be an organometallic compound containing Re, Be, Mg, Al, Ca, Mn, Co, Cu, Zn, Ga, Ge, Pd, Ag and/or Au, a derivative thereof, or a combination thereof, but is not limited thereto The sublimation temperature of the known material that may be included in the emission layers 212, 222, and 232 may be about 390° C. or less, and may satisfy the above-described sublimation temperature range.

For example, the second organic material may be a transparent n-type semiconductor having an energy bandgap of about 2.5 eV or more as described above, and the third organic material is a p-type that absorbs light of at least a part of a visible light wavelength spectrum. It may be a semiconductor.

For example, the second organic material may be a transparent n-type semiconductor having an energy bandgap of about 2.5 eV or more as described above, and the third organic material may be any one or two of a red wavelength spectrum, a green wavelength spectrum, and a blue wavelength spectrum. It may be a p-type semiconductor that selectively absorbs Additionally, the second organic material is an n-type semiconductor of the light absorption layer 330 and may have an energy level capable of forming effective electrical matching with the first common auxiliary layer 340 , for example, the first common auxiliary layer 340 . The difference between the LUMO energy level of and the LUMO energy level of the second organic material may be about 1.2 eV or less, and within the above range, about 1.1 eV or less, about 1.0 eV or less, about 0.8 eV or less, about 0.7 eV or less, or about 0.5 eV or less, about 0 to 1.2 eV, about 0 to 1.1 eV, about 0 to 1.0 eV, about 0 to 0.8 eV, about 0 to 0.7 eV, about 0 to 0.5 eV, about 0.01 to 1.2 eV, about 0.01 to 1.1 eV, about 0.01 to 1.0 eV, about 0.01 to 0.8 eV, about 0.01 to 0.7 eV, or about 0.01 to 0.5 eV. Accordingly, charges (eg, electrons) generated in the light absorption layer 330 may pass through the first common auxiliary layer 340 and may be effectively moved and/or extracted to the common electrode 320 .

[Formula 1]

In Formula 1,

X ¹ and X ² may each independently be O or NR ^a ,

R ¹ to R ⁴ and R ^a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cya Nogi or a combination thereof.

For example, the second organic material represented by Formula 1 may be represented by Formula 1A or 1B below.

[Formula 1A] [Formula 1B]

In Formulas 1A and 1B,

R ¹ to R ⁴ , R ^a1 and R ^a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, It may be a halogen, a cyano group, or a combination thereof.

For example, at least one of R ^a1 and R ^a2 may include an electron withdrawn group, for example, R ^a1 and R ^a2 may each include an electron withdrawn group.

For example, at least one of R ^a1 and R ^a2 is halogen; cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or a combination thereof.

For example, R ^a1 and R ^a2 are each halogen; cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or a combination thereof.

For example, R ^a1 and R ^a2 may be the same as or different from each other, for example, may be the same.

The second organic material may be, for example, selected from compounds listed in Group 1 below, but is not limited thereto.

[Group 1]

The third organic material may be selected from a compound that absorbs at least a portion of the visible light wavelength spectrum and satisfies the deposition characteristics described above.

For example, the third organic material may be selected from a compound that selectively absorbs light of a green wavelength spectrum and satisfies the above-described deposition characteristics. Additionally, the third organic material may form a pn junction with the aforementioned second organic material, for example, the HOMO energy level of the third organic material may be, for example, about 5.0 to 6.0 eV, about 5.1 to 5.9 eV, about 5.2 to 5.8 eV or about 5.3 to 5.8 eV, but is not limited thereto.

The third organic material may be, for example, a compound including an electron donating moiety and an electron accepting moiety, and may be represented by, for example, Formula A below.

[Formula A]

EDM - LM - EAM

In formula A,

EDM may be an electron donating moiety,

EAM may be an electron accepting moiety,

The LM may be a pi conjugated linking moiety linking the electron donating moiety and the electron accepting moiety.

For example, the third organic material may be represented by Formula 2 below.

[Formula 2]

In Formula 2,

X may be O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d Re ^e ,

Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from these;

Ar ^1a and Ar ^2a may each independently represent a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,

R ^1a to R ^3a and R ^b to R ^e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or it may be an unsubstituted C3 to C30 heteroaryl group, halogen, cyano group, or a combination thereof,

Ar ^1a , Ar ^2a , R ^1a and R ^2a may each independently exist, or two adjacent ones may be bonded to each other to form a ring.

For example, Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted pyri Dinyl (pyridinyl) group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted pyrimidinyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted quinyl group Nolinyl (quinolinyl) group, substituted or unsubstituted isoquinolinyl (isoquinolinyl) group, substituted or unsubstituted naphthyridinyl (naphthyridinyl) group, substituted or unsubstituted cinnolinyl group, substituted or unsubstituted A cyclic quinazolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted benzotriazinyl group, a substituted or unsubstituted pyridopyrazinyl group, It may be a substituted or unsubstituted pyridopyrimidinyl group, or a substituted or unsubstituted pyridopyridazinyl group.

For example, Ar ^1a and Ar ^2a may be fused to each other to form a ring.

For example, Ar ^2a and R ^1a may be fused to each other to form a ring.

Specifically, the third organic compound may be represented by the following Chemical Formula 2A or 2B.

[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,

X may be O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d Re ^e ,

Ar may be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from these;

Ar ^1a and Ar ^2a may each independently represent a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,

L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^f R ^g , SiR ^h R ⁱ , GeR ^j R ^k , NR ¹ , substituted or unsubstituted C1 to C30 alkyl It may be a lene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof,

R ^1a , R ^2a , R ^3a and R ^b to R ¹ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl It may be a group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.

For example, the third organic compound may be selected from compounds listed in the following groups 2A, 2B, or 2C, but is not limited thereto.

[Group 2A]

In group 2A, hydrogen present in each aromatic ring or heteroaromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C4 to C30 heteroaryl group, halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and may be substituted with a substituent selected from combinations thereof, R ^a , R ^b , R ^f , R ¹⁶ , R ¹⁷ , R ¹⁸ and R ²⁰ may each independently be hydrogen or a substituted or unsubstituted C1 to C6 alkyl group.

[Group 2B]

In group 2B, hydrogen present in each aromatic ring or heteroaromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C4 to C30 heteroaryl group, halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and may be substituted with a substituent selected from combinations thereof, R ^1a , R ^1b , R ¹¹ , and R ¹² may each independently be hydrogen or a C1 to C6 alkyl group.

[Group 2C]

In group 2C, hydrogen present in each aromatic ring or heteroaromatic ring is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C4 to C30 heteroaryl group, halogen (F, Cl, Br, I), a cyano group (-CN), a cyano-containing group, and may be substituted with a substituent selected from combinations thereof, R ^a , R ^b , R ^c , R ^d , R ¹⁶ and R ¹⁷ may each independently be hydrogen or a C1 to C6 alkyl group.

The light absorption layer 330 may be an intrinsic layer (layer I) in which the second organic material and the third organic material are mixed in a bulk heterojunction form. In this case, the p-type semiconductor and the n-type semiconductor may be mixed in a volume ratio (thickness ratio) of about 1:9 to 9:1, and within the above range, for example, in a volume ratio (thickness ratio) of about 2:8 to 8:2. and may be mixed in a volume ratio (thickness ratio) of, for example, about 3:7 to 7:3 within the above range, and may be mixed in a volume ratio (thickness ratio) of, for example, about 4:6 to 6:4 within the above range, Within the above range, for example, it may be mixed in a volume ratio (thickness ratio) of about 5:5.

The light absorption layer 330 may include a p-layer and/or an n-layer instead of the intrinsic layer (I-layer), or may further include a p-layer and/or an n-layer positioned above and/or below the intrinsic layer (I-layer). have. The p layer may include, for example, the third organic material described above and the n layer may include, for example, the second organic material described above. The light absorption layer 330 may be, for example, an I-layer, a p-layer/n-layer, a p-layer/I-layer, an I-layer/n-layer, or a p-layer/I-layer/n-layer, but is not limited thereto.

The thickness of the light emitting layers 212, 222, 232 and the light absorbing layer 330 may each independently be about 5 nm to 300 nm, and may be about 10 nm to 250 nm, about 20 nm to 200 nm, or about 30 nm to 180 nm within the above range. The difference between the thicknesses of the light emitting layers 212, 222, 232 and the light absorbing layer 330 may be about 20 nm or less, and may be about 15 nm or less, about 10 nm or less, or about 5 nm or less within the above range, and the light emitting layers 212, 222, 232 ) and the thickness of the light absorption layer 330 may be substantially the same.

An encapsulation layer 50 is formed on the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 . The encapsulation layer 50 may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic/inorganic film, or a combination thereof. The organic layer may include, for example, acrylic resin, (meth)acrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxides, nitrides and/or oxynitrides, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, It may be titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or a combination thereof, but is not limited thereto. The organic/inorganic layer may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer 50 may have one or two or more layers.

As described above, the sensor-embedded display panel 1000 according to the present embodiment includes the first, second, and third light emitting devices 210 , 220 , 230 , which emit light of a predetermined wavelength spectrum to display colors, and the light recognition target. By including the light absorption sensor 300 that absorbs the light reflected by 40 and converts it into an electrical signal in the same plane on the substrate 110, the display function and the recognition function (eg, biometric recognition function) can be performed together. . Accordingly, the sensor can be manufactured as a separate module and can have improved performance without increasing the thickness, unlike a conventional display panel that is attached to the outside of the display panel or formed under the display panel, so that the slim high-performance sensor-embedded display panel 1000 can be implemented.

In addition, since the light absorption sensor 300 uses the light emitted from the first, second, and third light emitting devices 210 , 220 , 230 , a recognition function (eg, a biometric recognition function) can be performed without a separate light source. Therefore, since there is no need to provide a separate light source outside the display panel, it is possible to prevent a decrease in the aperture ratio of the display panel due to the area occupied by the light source, and at the same time save the power consumed by the separate light source, so that the Power consumption can be improved.

In addition, as described above, the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 have the common electrode 320 , the first common auxiliary layer 340 , and the second common auxiliary layer ( By sharing 350 , the structure and process may be simplified compared to the case of forming the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 through separate processes.

In addition, as described above, the light absorption sensor 300 may be an organic photoelectric diode including an organic light absorption layer, and thus may have a light absorption twice or more higher than that of an inorganic diode such as a silicon photodiode. It may have a high-sensitivity sensing function.

In addition, as described above, the light absorption layer 330 of the light absorption sensor 300 includes a second organic material having good electrical matching with the first common auxiliary layer 320 and a third light absorption layer absorbing at least a portion of the visible light wavelength spectrum. By including the organic material, electrical characteristics and light absorption characteristics of the light absorption sensor 300 may be simultaneously improved. In addition, by selecting a transparent n-type semiconductor as the second organic material and a light absorbing material having wavelength selectivity as the third organic material, the sensitivity to light in the red wavelength spectrum, green wavelength spectrum, or blue wavelength spectrum is selectively increased Color separation characteristics can be improved without mixing absorption spectra. Accordingly, the sensor-embedded display panel 1000 may additionally implement an anti-spoofing effect in addition to the above-described effect, and thus the color separation characteristic of the light reflected from the recognition target 40 may be increased to increase the recognition target 40 . ) can further increase the detail of the shape and selectively recognize the color of the reflected light (eg, skin color), thereby further enhancing the accuracy of the biometric recognition function.

In addition, as described above, the organic material included in the light absorption layer 330 of the light absorption sensor 300 is the organic material of the emission layers 212 , 222 , 232 of the first, second and third light emitting devices 210 , 220 , 230 . By having a sublimation temperature difference within a predetermined range with the material, deposition can be performed in the same process, thereby simplifying the process and improving process stability.

Also, as described above, since the light absorption sensor 300 may be disposed anywhere in the non-display area NDA, a desired number may be disposed at a desired location of the sensor-embedded display panel 1000 . Therefore, for example, by randomly or regularly arranging the light absorption sensor 300 on the entire sensor-embedded display panel 1000, the biometric recognition function may be performed on any part of the screen of the electronic device such as a mobile device, and the biometric recognition function may be performed according to the user's selection. It is also possible to selectively perform the biometric function only at a specific location where the recognition function is required.

Hereinafter, another example of the sensor-embedded display panel 1000 according to an exemplary embodiment will be described.

3 is a cross-sectional view illustrating another example of a sensor-embedded display panel according to an exemplary embodiment.

Referring to FIG. 3 , the sensor-embedded display panel 1000 according to an exemplary embodiment has a plurality of sub-pixels PX displaying different colors, that is, different products selected from among red, green, and blue, as in the above-described exemplary embodiment. a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 displaying a first color, a second color, and a third color, and a first sub-pixel PX1 and a second The sub-pixel PX2 and the third sub-pixel PX3 include a first light emitting device 210 , a second light emitting device 220 , and a third light emitting device 230 , respectively.

However, unlike the above-described embodiment, the sensor-embedded display panel 1000 according to the present embodiment may include the fourth light emitting device 240 emitting light having an infrared wavelength spectrum. For example, the fourth light emitting device 240 may be included in the fourth sub-pixel PX4 adjacent to the first sub-pixel PX1 , the second sub-pixel PX2 , and/or the third sub-pixel PX3 , or in a non-display area. (NDA) may be included. The fourth sub-pixel PX4 may form one unit pixel UP together with the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 . may be repeatedly arranged along rows and/or columns.

Description of the first sub-pixel PX1 , the second sub-pixel PX2 , the third sub-pixel PX3 , the first light-emitting device 210 , the second light-emitting device 220 , and the third light-emitting device 230 . is as described above.

The fourth light emitting device 240 is disposed on the substrate 110 , and may be disposed on the same plane as the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 . The fourth light emitting device 240 may be electrically connected to a separate thin film transistor 120 to be independently driven. The fourth light emitting device 240 may have a structure in which a pixel electrode 241 , a second common auxiliary layer 350 , an emission layer 242 , a first common auxiliary layer 240 , and a common electrode 320 are sequentially stacked. Among them, the common electrode 320 , the first common auxiliary layer 340 , and the second common auxiliary layer 350 are the first, second, and third light emitting devices 210 , 220 , 230 and the light absorption sensor 300 . ) can be shared with The light emitting layer 242 may emit light of an infrared wavelength spectrum, for example, about 750 nm or more, about 750 nm to 20 µm, about 780 nm to 20 µm, about 800 nm to 20 µm, about 750 nm to 15 µm, about 780 nm to 15 µm , about 800 nm to 15 μm, about 750 nm to 10 μm, about 780 nm to 10 μm, about 800 nm to 10 μm, about 750 nm to 5 μm, about 780 nm to 5 μm, about 800 nm to 5 μm, about 750 nm to 3 μm, about Maximum emission wavelength at 780 nm to 3 μm, about 800 nm to 3 μm, about 750 nm to 2 μm, about 780 nm to 2 μm, about 800 nm to 2 μm, about 750 nm to 1.5 μm, about 780 nm to 1.5 μm, or about 800 nm to 1.5 μm can have

The light absorption sensor 300 reflects light emitted from at least one of the first, second, third, and fourth light emitting devices 210 , 220 , 230 , and 240 by a recognition target 40 such as a living body or a tool. It can absorb light and convert it into an electrical signal. For example, the absorption sensor 300 may absorb light reflected by the recognition target 40 from the light emitted from the fourth light emitting device 240 emitting light of an infrared wavelength spectrum and convert it into an electrical signal. In this case, the light absorption layer 330 of the light absorption sensor 300 may include an organic material, an inorganic material, an organic/inorganic material, or a combination thereof that selectively absorbs light of an infrared wavelength spectrum, for example, quantum dots, quinoid metal complexes, poly Methine compound, cyanine compound, phthalocyanine compound, merocyanine compound, naphthalocyanine compound, immonium compound, diimmonium compound, triarylmethane compound, dipyrromethene compound, anthraquinone compound, naphthoquinone, diquinone compound, naph Toquinone compound, anthraquinone compound, squarylium compound, rylene compound, perylene compound, squaraine compound, pyrylium compound, squarane compound, thiopyrylium compound, diketopyrrolopyrrole compound, boron dipyrromethene compound , a nickel-dithiol complex compound, a croconium compound, a derivative thereof, or a combination thereof, but is not limited thereto. For example, a material that selectively absorbs light in the infrared wavelength spectrum may be included as a p-type semiconductor, and the above-described second organic material may be included as an n-type semiconductor.

The sensor-embedded display panel 1000 according to the present example includes a fourth light emitting device 240 emitting light of an infrared wavelength spectrum and a light absorption sensor 300 absorbing light of an infrared wavelength spectrum. In addition to the recognition function (biometric function), the sensitivity of the light absorption sensor 300 can be improved even in low-light environments, and the detection ability of a three-dimensional image can be further improved by expanding the dynamic range that distinguishes between black and white details. . Accordingly, the sensing capability of the sensor-embedded display panel 1000 may be further improved. In particular, light in the infrared wavelength spectrum can have a deeper penetration depth of a living body due to its long-wavelength characteristics, and information located at different distances can be effectively obtained. can be detected effectively, and the scope of application can be further expanded.

The sensor-embedded display panel 1000 described above may be applied to electronic devices such as various display devices. Electronic devices such as display devices are, for example, mobile phones, video phones, smart phones, mobile phones, smart pads, smart watches, digital cameras, tablet PCs, laptop PCs, notebook computers, computer monitors, wearable computers, televisions, digital broadcasting Terminal, e-book, PDA (Personal Digital Assistants), PMP (Portable Multimedia Player), EDA (enterprise digital assistant), head mounted display (HMD), vehicle navigation, Internet of Things (IoT), Internet of Everything It may be applied to a device (IoE), a drone, a door lock, a safe, an automated teller machine (ATM), a security device, a medical device, or an automotive electronic component, but is not limited thereto.

4 is a schematic diagram illustrating an example of a smart phone as an electronic device according to an example.

Referring to FIG. 4 , the electronic device 2000 includes the above-described sensor-embedded display panel 1000 , and the light absorption sensor 300 is disposed on the front or part of the sensor-embedded display panel 1000 , so that it can be displayed on any part of the screen. The biometric function may be performed or the biometric function may be selectively performed only at a specific location where the biometric function is required according to the user's selection.

An example of a method for recognizing the recognition target 40 in the electronic device 2000 such as a display device is, for example, the first, second, and third light emitting devices 210 , 220 , 230 of the sensor-embedded display panel 1000 ( Alternatively, the first, second, third and fourth light emitting devices 210 , 220 , 230 , 240 ) and the light absorption sensor 300 are driven to drive the first, second and third light emitting devices 210 , 220 , 230 . (or the first, second, third and fourth light emitting devices 210, 220, 230, 240) of the light reflected from the recognition target 40 of the light emitted from the light absorption sensor 300 detecting the light, Comparing the image of the recognition target 40 stored in advance with the image of the recognition target 40 detected by the light absorption sensor 300, and determining the coincidence of the compared images and recognizing the recognition target 40 if they match The method may include turning off the light absorption sensor 300 and permitting user access to the display device and driving the sensor-embedded display panel 1000 to display an image according to the determination that this has been completed.

5 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to an embodiment.

Referring to FIG. 5 , the electronic device 2000 may further include a bus 1310 , a processor 1320 , a memory 1330 , and at least one additional device 1340 in addition to the aforementioned components. Information of the aforementioned sensor-embedded display panel 1000 , the processor 1320 , the memory 1330 , and the at least one additional device 1340 may be transmitted to each other through the bus 1310 .

The processor 1320 may include hardware including logic circuits; hardware/software combinations, such as processor-implemented software; or one or more processing circuitry, such as combinations thereof. For example, the processing circuit may include a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array. , FPGA), a system-on-chip (SoC), a programmable logic unit, a microprocessor, an application-specific integrated circuit (ASIC), or the like. As an example, the processing circuitry may include a non-transitory computer readable storage device. The processor 1320 may, for example, control a display operation of the sensor-embedded display panel 1000 or control a sensor operation of the light absorption sensor 300 .

The memory 1330 may store an instruction program, and the processor 1320 may execute the stored instruction program to perform a function related to the sensor-embedded display panel 1000 .

The one or more additional devices 1340 may be one or more communication interfaces (eg, wireless communication interfaces, wired interfaces), user interfaces (eg, keyboard, mouse, buttons, etc.), power supply and/or power supply interfaces, or a combination thereof. have.

The units and/or modules described herein may be implemented using hardware components and software components. For example, hardware components may include microphones, amplifiers, bandpass filters, audio-to-digital converters, and processing devices. The processing unit may be implemented using one or more hardware devices configured to execute and/or execute program code by performing arithmetic, logical, and input/output operations. Processing devices may include processors, controllers, and arithmetic logic units, digital signal processors, microcomputers, field programmable arrays, programmable logic units, microprocessors, or any other device capable of responding to and executing instructions. . The processing device may access, store, operate, process, and generate data in response to execution of an operating system (OS) and one or more software executing on the operating system.

Software may include computer programs, code, instructions, or combinations thereof and may, independently or collectively, instruct and/or configure the processing device to operate as desired, thereby transforming the processing device into a special purpose. Software and data may be permanently or temporarily embodied as a signal wave capable of providing or interpreting instructions or data to a machine, component, physical or virtual equipment, computer storage medium or device, or processing device. The software may also be distributed over networked computer systems so that the software can be stored and executed in a distributed manner. The software and data may be stored by one or more non-transitory computer readable storage devices.

Methods according to the above-described exemplary implementations may be recorded in a non-transitory computer readable storage device comprising program instructions for implementing various operations of the above-described exemplary implementations. A storage device may also include program instructions, data files, data structures, and the like, alone or in combination. The program instructions recorded in the storage device may be specially designed for the present embodiment or may be known and used by those skilled in the art of computer software. Examples of non-transitory computer readable storage devices include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROM discs, DVDs and/or Blu-ray discs; magneto-optical media such as optical disks; and hardware devices configured to store and execute program instructions, such as ROM, RAM, flash memory, and the like. The above-described apparatus may be configured to operate as one or more software modules to perform the operations of the above-described embodiments.

The above-described embodiment will be described in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of rights.

Synthesis example

Synthesis Example 1

[Compound 1a]

Dissolve a mixture of 1,4,5,8-naphthalenetetracarboxylic dianhydride (1eq.) and 4-chloroaniline (2.2eq.) in dimethylformamide (DMF) solvent and put it in a two-necked, round-bottomed flask at 180℃ for 24 hours. Stir. Then, after the temperature is lowered to room temperature, methanol is added thereto to precipitate a product, followed by filtration to obtain a powdery material. Then, the material is washed several times with methanol and purified by recrystallization using ethyl acetate and dimethyl sulfoxide (DMSO). Then, the obtained product is placed in an oven and dried in vacuum at a temperature of 80° C. for 24 hours to obtain compound 1a. The yield is more than 50%.

1H NMR (300 MHz, CDCl ₃ with Hexafluoroisopropanol): δ = 8.85 (s, 4H), 7.63 (s, 4H), 7.60 (s, 4H).

Synthesis Example 2

[Compound 1b]

Compound 1b (manufactured by Tokyo Chemical Industry) is prepared by sublimation purification.

Reference synthesis example

fullerene (C ₆₀ , nanom purple ST, manufactured by Frontier Carbon Corporation) is prepared.

Synthesis Example 3

[Compound 2a]

[Scheme 1]

(i) Synthesis of compound 2a-1

9.4 g (36.5 mmol) of 2-iodoselenophene and 7.5 g (30.5 mmol) of 1-Bromo-9H-carbazole in 30 ml of dioxane dissolve Copper(I) Iodide 0.29 g (1.52 mmol), trans-1,2-Cyclohexanediamine 0.70 g (6.09 mmol) and Tripotassium Phosphate 12.9 g (61.0 mmol) was added and heated to reflux for 30 hours. At this time, the obtained product is separated and purified through silica gel column chromatography (hexane:ethyl acetate=5:1 volume ratio) to obtain 8.18g of compound 2a-1 (yield: 72%).

(ii) Synthesis of compound 2a-2

12.0 g (32.0 mmol) of compound 2a-1 is dissolved in 300 ml of dehydrated diethyl ether. 12 ml (32.0 mmol) of a 2.76 M n-butyl lithium (n-BuLi) hexane solution was added dropwise at -50°C, followed by stirring at room temperature for 1 hour. 2.0 g (35.2 mmol) of dehydrated acetone, dimethyl ketone (CH ₃ COCH ₃ )) is added at -50°C, and the mixture is stirred at room temperature for 2 hours. The organic layer extracted from diethyl ether was washed with an aqueous sodium chloride solution, and then dried by adding anhydrous magnesium sulfate. At this time, the obtained product is separated and purified through silica gel column chromatography (hexane:dichloromethane=100:0 to 50:50 by changing the volume ratio) to obtain 6.3 g of compound 2a-2 (yield: 56%).

(iii) Synthesis of compound 2a-3

6.23 g (17.6 mmol) of compound 2a-2 is dissolved in 180 ml of dichloromethane. At 0°C, 4.98 g (35.5 mmol) of Boron Trifluoride-Ethyl Ether Complex was added dropwise and stirred for 2 hours. The organic layer extracted from dichloromethane was washed with an aqueous sodium chloride solution, and then dried by adding anhydrous magnesium sulfate. At this time, the obtained product is separated and purified through silica gel column chromatography (hexane:dichloromethane=50:50 by volume) to obtain 5.12 g of Compound 2a-3 (yield: 87%).

(iv) synthesis of compound 2a-4

1.9 ml (20.2 mmol) of phosphoryl chloride was added dropwise to 6.0 ml (77.5 mmol) of N,N-dimethylformamide at -15°C, followed by stirring at room temperature for 2 hours. . This solution was slowly dropped to a solution of 5.23 g (15.5 mmol) of Compound 2a-3 in 150 ml of dichloromethane at -15°C, stirred at room temperature for 30 hours, and then concentrated under low pressure. Water is added thereto, and an aqueous sodium hydroxide solution is added until the pH value is 14, followed by stirring at room temperature for 2 hours. The organic layer extracted with dichloromethane was washed with an aqueous sodium chloride solution, and then dried with anhydrous magnesium sulfate. The product thus obtained is separated and purified through silica gel column chromatography (hexane:dichloromethane=50:50 volume ratio) to obtain 3.34 g of Compound 2a-4 (yield: 65%).

(v) synthesis of compound 2a

4.00 g (5.55 mmol) of 4,4-dimethyl-4H-selenopheno[3',2':5,6]pyrido[3,2,1-jk]carbazole-2-carbaldehyde (Compound 2a-4) in ethanol Suspended, 1.05 g (6.66 mmol) of 1-methyl-2-thioxodihydropyrimidine-4,6(1H,5H)-dione was added thereto, and reacted at 50° C. for 24 hours to obtain 2.4 g of compound 2a. The yield is 86%. The obtained compound is purified by sublimation to a purity of 99.9%.

1H-NMR (500 MHz, Methylene Chloride-d2): δ 8.95 (s, 0.5H), 8.77 (s, 0.5H), 8.65 (s,1H), 8.18 (s, 1H) 8.06 (d, 1H), 7.92 (d, 1H), 7.83 (d, 1H), 7.62 (d, 1H), 7.44 (t, 1H), 7.36 (m, 2H), 3.76 (s, 1.5H), 3.71 (s, 1.5H) , 1.68 (s, 6H).

Synthesis Example 4

[Compound 2b]

[Scheme 2]

(i) Synthesis of compound 2b-1

5 mol% of tris(dibenzylideneacetone)dipalladium(0)(Pd(dba)2), 5 mol% of tri-t-butylphosphine (P(t-Bu)3) and 7.15g (74.4 mmol) of sodium t-butoxide ( NaOtBu) in the presence of 2-iodoselenophene 7.01 g (27.3 mmol) and 10,10-dimethyl-5,10-dihydrodibenzo [b, e] [1,4] azacillin (10,10-dimethyl- 5.59 g (24.8 mmol) of 5,10-dihydrodibenzo[b,e][1,4]azasiline) was heated to reflux in 150 ml of anhydrous toluene for 2 hours. The obtained product was separated and purified by silica gel column chromatography (toluene:hexane=1:4 volume ratio) to compound 2b-1 (10,10-dimethyl-5-(selenophen-2-yl)-5,10-dihydrodibenzo[ b,e][1,4]azasiline) 8.0 g. The yield is 80%.

(ii) Synthesis of compound 2b-2

1.11 ml of phosphoryl chloride was added dropwise to 3.19 ml of N,N-dimethylformamide at -15°C and stirred at room temperature (24°C) for 2 hours. Then, the resultant was slowly added dropwise to a mixture of 200 ml of dichloromethane and 3.19 g of compound 2b-1 at -15 °C, stirred at room temperature (24 °C) for 30 minutes, and concentrated under reduced pressure. 100 ml of water is added here, and an aqueous sodium hydroxide solution is added until the pH value is 14, followed by stirring at room temperature (24°C) for 2 hours. Then, the organic layer extracted with dichloromethane was washed with an aqueous sodium chloride solution, and then dried by adding anhydrous magnesium sulfate anhydrous. The obtained product was separated and purified by silica gel column chromatography (hexane: ethyl acetate = 4:1 volume ratio), and compound 2b-2 (5-(10,10-dimethyldibenzo[b,e][1,4]azasilin- 2.20 g of 5(10H)-yl)selenoophene-2-carbaldehyde) is obtained. The yield is 64%.

(iii) synthesis of compound 2b

1.77 g (4.64 mmol) of the obtained compound 2b-2 was suspended in ethanol, 0.89 g 1-methyl-2-thioxodihydropyrimidine-4,6(1H,5H)-dione (5.57 mmol) was added thereto, and 2 Time-reacted to obtain 2.0 g of compound 2b. The yield is 83%. The obtained compound is purified by sublimation to a purity of 99.9%.

1H-NMR (500 MHz, DMSO-d6): δ12.1 (d, 1H), 8.29 (d, 1H), 8.22 (dd,1H), 7.89 (dd, 2H) 7.76 (d, 2H), 7.61 ( q, 2H), 7.48 (q, 2H), 6.59 (t, 1H), 3.48 (d, 3H), 0.41 (s, 6H).

Assessment I

Evaluate the sublimation temperature of the organic material obtained in the synthesis example.

The sublimation temperature is evaluated by thermogravimetric analysis (TGA), and the temperature is increased under a high vacuum of 10 Pa or less to evaluate from the temperature at which the weight of the sample decreases by 10% compared to the initial weight.

The results are shown in Tables 1 and 2.

T _s(10) (°C) Synthesis Example 1 270 Synthesis Example 2 204 Reference synthesis example 450

T _s(10) (°C) Synthesis Example 3 270 Synthesis Example 4 241

* T _s(10) (℃): the temperature at which the weight of the sample decreased by 10% compared to the initial weight

Assessment II

The organic material obtained in Synthesis Example is deposited on a glass substrate, and the energy level of the deposited thin film is obtained.

The HOMO energy level can be evaluated as the amount of photoelectrons emitted according to energy by irradiating UV light on a thin film using AC-2 (Hitachi) or AC-3 (Riken Keiki Co., LTD.). The energy bandgap can be obtained by using a UV-Vis spectrometer (Shimadzu Corporation), and then calculating the LUMO energy level from the energy bandgap and the already measured HOMO energy level.

The results are shown in Tables 3 and 4.

HOMO (eV) LUMO (eV) Energy bandgap (eV) Synthesis Example 1 6.19 3.20 2.99 Synthesis Example 2 6.31 3.27 3.04 Reference synthesis example 6.40 4.23 2.17

HOMO (eV) LUMO (eV) Energy bandgap (eV) Synthesis Example 3 5.66 3.70 1.96 Synthesis Example 4 5.40 3.23 2.17

* HOMO, LUMO: absolute value

Example

Example 1

Al (10 nm), ITO (100 nm), and Al (8 nm) are sequentially deposited on a glass substrate to form a lower electrode having an Al/ITO/Al structure. Then, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine was formed on the lower electrode to form a hole auxiliary layer (HOMO: 5.3 to 5.6 eV). , LUMO: 2.0-2.3 eV). Then, on the hole auxiliary layer, a third organic material (p-type semiconductor, HOMO: 5.66 eV, LUMO: 3.70 eV) obtained in Synthesis Example 3 was deposited to a thickness of 15 nm, and then the second organic material obtained in Synthesis Example 1 (n-type semiconductor, HOMO: 6.19 eV, LUMO: 3.20 eV) was deposited to a thickness of 35 nm to form a double-layered light absorption layer (λ _max =556 nm). Subsequently, 4,7-diphenyl-1,10-phenanthroline is deposited on the light absorption layer to form an electron auxiliary layer (HOMO: 6.1 to 6.4 eV, LUMO: 2.9 to 3.2 eV). Next, magnesium and silver are deposited on the electron auxiliary layer to form an Mg:Ag upper electrode to manufacture a light absorption sensor.

Example 2

A light absorption sensor was manufactured in the same manner as in Example 1, except that the second organic material obtained in Synthesis Example 2 was used instead of the second organic material obtained in Synthesis Example 1 as an n-type semiconductor.

Reference Example 1

An absorption sensor was manufactured in the same manner as in Example 1 except that fullerene (C ₆₀ ) according to Reference Synthesis Example was used instead of the second organic material obtained in Synthesis Example 1 as an n-type semiconductor.

Example 3

A light absorption sensor was manufactured in the same manner as in Example 1, except that the third organic material obtained in Synthesis Example 4 was used instead of the third organic material obtained in Synthesis Example 3 as a p-type semiconductor.

Reference Example 2

A light absorption sensor was manufactured in the same manner as in Example 3, except that fullerene (C ₆₀ ) according to Reference Synthesis Example was used instead of the second organic material obtained in Synthesis Example 1 as an n-type semiconductor.

Assessment III

The photoelectric conversion efficiency of the light absorption sensor according to Examples and Reference Examples is evaluated.

The photoelectric conversion efficiency is evaluated from external quantum efficiency (EQE) measured after the light absorption sensor according to Examples and Reference Examples is left at 85° C. for 1 hour. External quantum efficiency (EQE) was evaluated with Incident Photon to Current Efficiency (IPCE) at 450 nm (blue, B), 530 nm (green, G) and 630 nm (red, R) wavelengths.

The results are shown in Tables 5 and 6.

EQE(3V, %) wavelength selectivity EQE(B) EQE(G) EQE(R) EQE(G)/EQE(B) EQE(G)/EQE(R) Example 1 0.9 75.0 4.2 83.3 17.9 Reference Example 1 1.9 32.2 4.7 16.9 6.85

EQE(3V, %) wavelength selectivity EQE(B) EQE(G) EQE(R) EQE(G)/EQE(B) EQE(G)/EQE(R) Example 3 1.2 60.7 0.1 50.6 607 Reference Example 2 5.4 39.2 0.2 7.3 196

Referring to Tables 5 and 6, it can be seen that the light absorption sensor according to the embodiment exhibits improved photoelectric conversion efficiency in the green wavelength spectrum compared to the sensor according to the reference example, and the photoelectric conversion efficiency in the blue wavelength or red wavelength It can be seen that the photoelectric conversion efficiency at the green wavelength is high and the wavelength selectivity is high.

Assessment IV

The dark current under the reverse bias voltage of the light absorption sensor according to Examples and Reference Examples is evaluated.

The dark current is evaluated from the dark current density divided by the unit pixel area (0.04cm2) after measuring the dark current using a current-voltage evaluation device (Keithley K4200 parameter analyzer), and the dark current density is evaluated from the current flowing when -3V reverse bias is applied. .

The results are shown in Tables 7 and 8.

Dark current (mA/cm2) Example 1 2.0 x 10 ^-5 Example 2 3.5 x 10 ^-5 Reference Example 1 7.9 x 10 ^-5

Dark current (mA/cm2) Example 3 2.0 x 10 ^-5 Reference Example 2 7.3 x 10 ^-5

Referring to Tables 7 and 8, it can be seen that the light absorption sensor according to the embodiment has a low dark current when the reverse bias is applied as compared to the light absorption sensor according to the reference example.

Although the embodiments have been described in detail above, the scope of the rights is not limited thereto, and various modifications and improved forms of those skilled in the art using the basic concepts defined in the following claims also belong to the scope of the rights.

40: recognition target 50: encapsulation layer
110: substrate 120: thin film transistor
140: insulating layer 141, 142: contact hole
150: pixel definition layer
210, 220, 230: light emitting device
211, 221, 231, 310: pixel electrode
212, 222, 232: light emitting layer 320: common electrode
330: light absorption layer 340: first common auxiliary layer
350: second common auxiliary layer 1000: sensor-embedded display panel
2000: electronic device

Claims (30)

Board,
A light emitting device positioned on the substrate and including a light emitting layer, and
A light absorption sensor including a light absorption layer positioned on the substrate and arranged side by side with the light emitting layer along the surface direction of the substrate
including,
The light absorption layer absorbs light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof,
The light emitting layer comprises a first organic material,
The light absorbing layer includes a second organic material,
The difference between the sublimation temperature of the first organic material and the second organic material is 150° C. or less, wherein the sublimation temperature is a temperature at which a weight reduction of 10% compared to the initial weight occurs in thermogravimetric analysis at 10 Pa or less.
Sensor built-in display panel.
In claim 1,
The light emitting device includes first, second and third light emitting devices emitting light of different wavelength spectrum,
The light absorption sensor absorbs light emitted from at least one of the first, second, and third light emitting devices by a recognition target and converts it into an electrical signal.
In claim 1,
and a sublimation temperature of the second organic material is 390° C. or less.
In claim 3,
A sublimation temperature of the second organic material is 100°C to 390°C.
In claim 1,
and an energy bandgap of the second organic material is 2.5 eV or more.
In claim 1,
and the second organic material is a transparent n-type semiconductor.
In claim 1,
The light emitting element and the light absorption sensor each include a common electrode for applying a common voltage to the light emitting element and the light absorption sensor,
The sensor-embedded display panel further includes a first common auxiliary layer continuously formed between the light emitting layer and the common electrode and between the light absorbing layer and the common electrode.
In claim 7,
a difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the second organic material is 1.2 eV or less.
In claim 7,
and a second common auxiliary layer continuously formed between the light emitting layer and the substrate and between the light absorbing layer and the substrate.
In claim 1,
The second organic material is a sensor-embedded display panel represented by the following Chemical Formula 1:
[Formula 1]

In Formula 1,
X ¹ and X ² are each independently O or NR ^a ,
R ¹ to R ⁴ and R ^a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cya anger or a combination thereof.
In claim 10,
The second organic material is a sensor-embedded display panel represented by the following Chemical Formula 1A or 1B:
[Formula 1A] [Formula 1B]

In Formulas 1A and 1B,
R ¹ to R ⁴ , R ^a1 and R ^a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cyano group, or a combination thereof.
In claim 11,
At least one of R ^a1 and R ^a2 includes an electron withdrawn group.
In claim 12,
at least one of R ^a1 and R ^a2 is halogen; cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; Or a sensor-embedded display panel including a combination thereof.
In claim 1,
The light absorption layer further comprises a third organic material forming a pn junction with the second organic material,
a difference in sublimation temperature between any two of the first organic material, the second organic material, and the third organic material is 150° C. or less, respectively.
15. In claim 14,
The third organic material is a light absorbing material that selectively absorbs any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum.
15. In claim 14,
The third organic material is a sensor-embedded display panel represented by the following Chemical Formula 2:
[Formula 2]

In Formula 2,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,
R ^1a to R ^3a and R ^b to R ^e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C3 to C30 heteroaryl group, halogen, cyano group, or a combination thereof,
Ar ^1a , Ar ^2a , R ^1a and R ^2a are each independently present or two adjacent ones are bonded to each other to form a ring.
17. In claim 16,
The third organic material is a sensor-embedded display panel represented by the following Chemical Formula 2A or 2B:
[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^f R ^g , SiR ^h R ⁱ , GeR ^j R ^k , NR ¹ , substituted or unsubstituted C1 to C30 alkyl a lene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;
R ^1a , R ^2a , R ^3a and R ^b to R ¹ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.
In claim 1,
The light emitting device includes first, second and third light emitting devices emitting any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum,
The light absorbing layer absorbs light of the same wavelength spectrum as light emitted from at least one of the first, second and third light emitting devices.
Sensor built-in display panel.
In claim 1,
The sensor-embedded display panel is
a display area for displaying colors; and
Non-display area except for the display area
including,
The light absorption sensor is located in the non-display area.
Sensor built-in display panel.
In paragraph 19,
The display area is
a plurality of first sub-pixels displaying red color and including the first light emitting device;
a plurality of second sub-pixels displaying green color and including the second light emitting device; and
A plurality of third sub-pixels displaying blue color and including the third light emitting device
including,
The light absorption sensor is positioned between at least two selected from the first sub-pixel, the second sub-pixel, and the third sub-pixel.
a display area displaying a color and a non-display area other than the display area;
The display area is
a first sub-pixel displaying a first color and including a first light emitting device;
a second sub-pixel displaying a second color and including a second light emitting element; and
A third sub-pixel displaying a third color and including a third light emitting device
includes,
the non-display area includes a light absorption sensor positioned between at least two of the first sub-pixel, the second sub-pixel, and the third sub-pixel;
The first, second and third light emitting devices each include first, second and third light emitting layers emitting light of an emission spectrum corresponding to the first, second and third colors,
The light absorption sensor includes a light absorption layer that includes a p-type semiconductor and an n-type semiconductor that form a pn junction, and absorbs light reflected by a recognition target and converts it into an electrical signal,
The sublimation temperature of the organic material and the n-type semiconductor included in the first, second, and third light-emitting layers is 390° C. or less, respectively, where the sublimation temperature is 10% or less compared to the initial weight in thermogravimetric analysis at 10 Pa or less. is the temperature at which
a difference in sublimation temperature between the organic material included in the first, second, and third light emitting devices and the n-type semiconductor is 150° C. or less.
In claim 21,
The first, second and third light emitting elements and the light absorption sensor are
a common electrode for applying a common voltage to the first, second and third light emitting devices and the light absorption sensor; and
A first common auxiliary layer positioned between the first, second, and third light emitting layers and the common electrode and between the light absorbing layer and the common electrode
including,
The LUMO energy level of the first common auxiliary layer is between the LUMO energy level of the light emitting layer and the work function of the common electrode,
The difference between the LUMO energy level of the first common auxiliary layer and the LUMO energy level of the n-type semiconductor is 1.2 eV or less.
Sensor built-in display panel.
In claim 21,
The n-type semiconductor is represented by the following Chemical Formula 1,
The p-type semiconductor is represented by the following Chemical Formula 2
Sensor built-in display panel:
[Formula 1]

In Formula 1,
X ¹ and X ² are each independently O or NR ^a ,
R ¹ to R ⁴ and R ^a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cya Nogi or a combination thereof,
[Formula 2]

In Formula 2,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,
R ^1a to R ^3a and R ^b to R ^e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, substituted Or an unsubstituted C3 to C30 heteroaryl group, halogen, cyano group, or a combination thereof,
Ar ^1a , Ar ^2a , R ^1a and R ^2a are each independently present or two adjacent ones are bonded to each other to form a ring.
In claim 23,
The n-type semiconductor is a sensor-embedded display panel represented by the following Chemical Formula 1A or 1B:
[Formula 1A] [Formula 1B]

In Formulas 1A and 1B,
R ¹ to R ⁴ , R ^a1 and R ^a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cyano group, or a combination thereof;
at least one of R ^a1 and R ^a2 is halogen; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; cyano group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or combinations thereof.
In claim 23,
The p-type semiconductor is a sensor-embedded display panel represented by the following Chemical Formula 2A or 2B:
[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^f R ^g , SiR ^h R ⁱ , GeR ^j R ^k , NR ¹ , substituted or unsubstituted C1 to C30 alkyl a lene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;
R ^1a , R ^2a , R ^3a and R ^b to R ¹ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.
An electronic device comprising the sensor-embedded display panel according to any one of claims 1 to 25.
a pair of electrodes, and
a light absorbing layer positioned between the pair of electrodes
including,
The light absorbing layer is
A p-type semiconductor that selectively absorbs any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and an infrared wavelength spectrum, and
An n-type semiconductor forming a p-n junction with the p-type semiconductor
including,
The n-type semiconductor is an absorption sensor represented by the following Chemical Formula 1A or 1B:
[Formula 1A] [Formula 1B]

In Formulas 1A and 1B,
R ¹ to R ⁴ , R ^a1 and R ^a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, halogen, cyano group, or a combination thereof;
at least one of R ^a1 and R ^a2 is halogen; cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or combinations thereof.
In claim 27,
The p-type semiconductor is an absorption sensor represented by the following Chemical Formula 2:
[Formula 2]

In Formula 2,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 aryl (ene) group or a substituted or unsubstituted C3 to C30 heteroaryl (ene) group,
R ^1a to R ^3a and R ^b to R ^e are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl (ene) group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl (ene) group, a substituted or unsubstituted C3 to C30 heteroaryl (ene) group, halogen, cyano group, or a combination thereof,
Ar ^1a , Ar ^2a , R ^1a and R ^2a are each independently present or two adjacent ones are bonded to each other to form a ring.
29. In claim 28,
The p-type semiconductor is an absorption sensor represented by the following Chemical Formula 2A or 2B:
[Formula 2A] [Formula 2B]

In Formulas 2A and 2B,
X is O, S, Se, Te, SO, SO ₂ , CR ^b R ^c or SiR ^d R ^e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or two or more fused rings selected from them,
Ar ^1a and Ar ^2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO ₂ , CR ^f R ^g , SiR ^h R ⁱ , GeR ^j R ^k , NR ¹ , substituted or unsubstituted C1 to C30 alkyl a lene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof;
R ^1a , R ^2a , R ^3a and R ^b to R ¹ are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, or a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or a combination thereof.
An electronic device comprising the light absorption sensor according to any one of claims 27 to 29.

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