KR20230141969A - Water-soluble preflux, and surface treating method - Google Patents
Water-soluble preflux, and surface treating method Download PDFInfo
- Publication number
- KR20230141969A KR20230141969A KR1020230034368A KR20230034368A KR20230141969A KR 20230141969 A KR20230141969 A KR 20230141969A KR 1020230034368 A KR1020230034368 A KR 1020230034368A KR 20230034368 A KR20230034368 A KR 20230034368A KR 20230141969 A KR20230141969 A KR 20230141969A
- Authority
- KR
- South Korea
- Prior art keywords
- water
- component
- mass
- soluble preflux
- amine compound
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 15
- -1 imidazole compound Chemical class 0.000 claims abstract description 37
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 33
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 19
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000007524 organic acids Chemical class 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 8
- 238000013329 compounding Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229940126062 Compound A Drugs 0.000 description 6
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 6
- 235000011054 acetic acid Nutrition 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 3
- COGUOPIIFAMLES-UHFFFAOYSA-N 2-[(4-chlorophenyl)methyl]-1h-benzimidazole Chemical compound C1=CC(Cl)=CC=C1CC1=NC2=CC=CC=C2N1 COGUOPIIFAMLES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- XITRBUPOXXBIJN-UHFFFAOYSA-N bis(2,2,6,6-tetramethylpiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)NC(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)NC(C)(C)C1 XITRBUPOXXBIJN-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- 239000000243 solution Substances 0.000 description 3
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- FHHCKYIBYRNHOZ-UHFFFAOYSA-N 2,5-diphenyl-1h-imidazole Chemical compound C=1N=C(C=2C=CC=CC=2)NC=1C1=CC=CC=C1 FHHCKYIBYRNHOZ-UHFFFAOYSA-N 0.000 description 2
- BODVSESPBZOELC-UHFFFAOYSA-N 2-(2-phenylethyl)-1h-imidazole Chemical compound N=1C=CNC=1CCC1=CC=CC=C1 BODVSESPBZOELC-UHFFFAOYSA-N 0.000 description 2
- HULPJQXXYCPOHN-UHFFFAOYSA-N 2-[(4-methylphenyl)methyl]-1h-benzimidazole Chemical compound C1=CC(C)=CC=C1CC1=NC2=CC=CC=C2N1 HULPJQXXYCPOHN-UHFFFAOYSA-N 0.000 description 2
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- HLOQMAORPBNSBR-UHFFFAOYSA-N [Na].[Na].[Na].[Na].C(CN(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O.O Chemical compound [Na].[Na].[Na].[Na].C(CN(CC(=O)O)CC(=O)O)N(CC(=O)O)CC(=O)O.O HLOQMAORPBNSBR-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- JXTHNDFMNIQAHM-UHFFFAOYSA-N dichloroacetic acid Chemical compound OC(=O)C(Cl)Cl JXTHNDFMNIQAHM-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- YWWNNLPSZSEZNZ-UHFFFAOYSA-N n,n-dimethyldecan-1-amine Chemical compound CCCCCCCCCCN(C)C YWWNNLPSZSEZNZ-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 2
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- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- NWPIOULNZLJZHU-UHFFFAOYSA-N (1,2,2,6,6-pentamethylpiperidin-4-yl) 2-methylprop-2-enoate Chemical compound CN1C(C)(C)CC(OC(=O)C(C)=C)CC1(C)C NWPIOULNZLJZHU-UHFFFAOYSA-N 0.000 description 1
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- XGIDEUICZZXBFQ-UHFFFAOYSA-N 1h-benzimidazol-2-ylmethanethiol Chemical compound C1=CC=C2NC(CS)=NC2=C1 XGIDEUICZZXBFQ-UHFFFAOYSA-N 0.000 description 1
- RNIPJYFZGXJSDD-UHFFFAOYSA-N 2,4,5-triphenyl-1h-imidazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 RNIPJYFZGXJSDD-UHFFFAOYSA-N 0.000 description 1
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- CAMVEIFINOXKGZ-UHFFFAOYSA-N 2-(2-cyclohexylethyl)-1h-benzimidazole Chemical compound N=1C2=CC=CC=C2NC=1CCC1CCCCC1 CAMVEIFINOXKGZ-UHFFFAOYSA-N 0.000 description 1
- GUKULMCQRHXQPR-UHFFFAOYSA-N 2-(2-methylphenyl)-1h-imidazole Chemical compound CC1=CC=CC=C1C1=NC=CN1 GUKULMCQRHXQPR-UHFFFAOYSA-N 0.000 description 1
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- IXEHZMUOBBZTNR-UHFFFAOYSA-N 2-[2-(1h-benzimidazol-2-yl)ethyl]-1h-benzimidazole Chemical compound C1=CC=C2NC(CCC=3NC4=CC=CC=C4N=3)=NC2=C1 IXEHZMUOBBZTNR-UHFFFAOYSA-N 0.000 description 1
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- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
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- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- 229940112016 barium acetate Drugs 0.000 description 1
- YTLQFZVCLXFFRK-UHFFFAOYSA-N bendazol Chemical compound N=1C2=CC=CC=C2NC=1CC1=CC=CC=C1 YTLQFZVCLXFFRK-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- UUHXWPVKGMTRPD-UHFFFAOYSA-N bis(1,2,2,6,6-pentamethylpiperidin-4-yl) 2-butyl-2-[2-(3,5-ditert-butyl-4-hydroxyphenyl)ethyl]propanedioate Chemical compound CCCCC(CCC1=CC(=C(C(=C1)C(C)(C)C)O)C(C)(C)C)(C(=O)OC2CC(N(C(C2)(C)C)C)(C)C)C(=O)OC3CC(N(C(C3)(C)C)C)(C)C UUHXWPVKGMTRPD-UHFFFAOYSA-N 0.000 description 1
- RSOILICUEWXSLA-UHFFFAOYSA-N bis(1,2,2,6,6-pentamethylpiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)N(C)C(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)N(C)C(C)(C)C1 RSOILICUEWXSLA-UHFFFAOYSA-N 0.000 description 1
- OSIVCXJNIBEGCL-UHFFFAOYSA-N bis(2,2,6,6-tetramethyl-1-octoxypiperidin-4-yl) decanedioate Chemical compound C1C(C)(C)N(OCCCCCCCC)C(C)(C)CC1OC(=O)CCCCCCCCC(=O)OC1CC(C)(C)N(OCCCCCCCC)C(C)(C)C1 OSIVCXJNIBEGCL-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229960005215 dichloroacetic acid Drugs 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N ethyl formate Chemical compound CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- 229940099596 manganese sulfate Drugs 0.000 description 1
- 239000011702 manganese sulphate Substances 0.000 description 1
- 235000007079 manganese sulphate Nutrition 0.000 description 1
- BHVPEUGTPDJECS-UHFFFAOYSA-L manganese(2+);diformate Chemical compound [Mn+2].[O-]C=O.[O-]C=O BHVPEUGTPDJECS-UHFFFAOYSA-L 0.000 description 1
- RGVLTEMOWXGQOS-UHFFFAOYSA-L manganese(2+);oxalate Chemical compound [Mn+2].[O-]C(=O)C([O-])=O RGVLTEMOWXGQOS-UHFFFAOYSA-L 0.000 description 1
- SQQMAOCOWKFBNP-UHFFFAOYSA-L manganese(II) sulfate Chemical compound [Mn+2].[O-]S([O-])(=O)=O SQQMAOCOWKFBNP-UHFFFAOYSA-L 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OCIDXARMXNJACB-UHFFFAOYSA-N n'-phenylethane-1,2-diamine Chemical compound NCCNC1=CC=CC=C1 OCIDXARMXNJACB-UHFFFAOYSA-N 0.000 description 1
- YWFWDNVOPHGWMX-UHFFFAOYSA-N n,n-dimethyldodecan-1-amine Chemical compound CCCCCCCCCCCCN(C)C YWFWDNVOPHGWMX-UHFFFAOYSA-N 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229940116351 sebacate Drugs 0.000 description 1
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- WUPCFMITFBVJMS-UHFFFAOYSA-N tetrakis(1,2,2,6,6-pentamethylpiperidin-4-yl) butane-1,2,3,4-tetracarboxylate Chemical compound C1C(C)(C)N(C)C(C)(C)CC1OC(=O)CC(C(=O)OC1CC(C)(C)N(C)C(C)(C)C1)C(C(=O)OC1CC(C)(C)N(C)C(C)(C)C1)CC(=O)OC1CC(C)(C)N(C)C(C)(C)C1 WUPCFMITFBVJMS-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- ZULTYUIALNTCSA-UHFFFAOYSA-N zinc hydride Chemical compound [ZnH2] ZULTYUIALNTCSA-UHFFFAOYSA-N 0.000 description 1
- 229910000051 zinc hydride Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
(A) 이미다졸 화합물과, (B) 아민 화합물과, (C) 유기산과, (D) 물을 함유하고, 상기 (B) 성분이 (B1) 힌더드아민 화합물, 및 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물로 이루어지는 군으로부터 선택되는 적어도 1개를 함유하는 수용성 프리플럭스.Contains (A) an imidazole compound, (B) an amine compound, (C) an organic acid, and (D) water, wherein the component (B) is (B1) a hindered amine compound, and (B2) a hindered amine compound having 10 or more carbon atoms. A water-soluble preflux containing at least one selected from the group consisting of amine compounds having an alkyl group.
Description
본 발명은 수용성 프리플럭스, 및 표면 처리 방법에 관한 것이다.The present invention relates to water-soluble prefluxes and surface treatment methods.
프린트 배선 기판은 솔더 레지스트 피막이 형성된 상태로 유통되는 경우가 많다. 이와 같은 경우, 프린트 배선 기판의 대부분은 솔더 레지스트 피막으로 덮어져 있다. 그러나, 전자 부품을 탑재하기 때문에 전극 단자(랜드)에는 솔더 레지스트 피막이 존재하지 않는다. 그 때문에, 프린트 배선 기판을 유통할 때나 보관할 때에, 전극 단자의 표면이 산화되기 쉽다. 그래서, 프린트 배선 기판의 전극 단자에는 전극 단자의 표면의 산화를 방지하기 위해서, 전극 단자의 표면에 금 도금 처리가 실시되는 경우가 있다. 그러나, 금 도금 처리에는 귀금속을 사용하기 때문에 비용이 높아진다고 하는 문제가 있다. 그래서, 프린트 배선 기판에 있어서는 금 도금 처리 대신에, 수용성 프리플럭스에 의해 전극 단자의 표면에 유기 피막을 형성하는 방법이 채용되고 있다(예를 들면, 문헌 1(일본 특허 공개 평 제6-322551호 공보)).Printed wiring boards are often distributed with a solder resist film formed on them. In this case, most of the printed wiring board is covered with a solder resist film. However, since electronic components are mounted, there is no solder resist film on the electrode terminal (land). Therefore, when distributing or storing a printed wiring board, the surface of the electrode terminal is likely to be oxidized. Therefore, in order to prevent oxidation of the surface of the electrode terminal of the printed wiring board, gold plating treatment is sometimes applied to the surface of the electrode terminal. However, gold plating has the problem of increased costs because precious metals are used. Therefore, in printed wiring boards, instead of gold plating treatment, a method of forming an organic film on the surface of the electrode terminal using a water-soluble preflux is adopted (for example, Document 1 (Japanese Patent Laid-Open No. 6-322551) report)).
그러나, 프린트 배선 기판은 전자 부품의 납땜을 위해서, 복수회의 리플로우 처리가 행해지고, 그 때마다 고온에 노출된다. 그리고, 이와 같은 복수회의 리플로우 처리에 의해, 유기 피막이 열화되기 때문에, 전자 부품의 납땜성이 저하되어 버릴 우려가 있다. 그래서, 보다 내열성이 양호한 유기 피막이 요구된다.However, printed wiring boards are reflowed multiple times for soldering of electronic components, and are exposed to high temperatures each time. And, since the organic film deteriorates due to such multiple reflow treatments, there is a risk that the solderability of the electronic component may deteriorate. Therefore, an organic film with better heat resistance is required.
본 발명은 내열성이 양호한 유기 피막을 형성할 수 있는 수용성 프리플럭스, 및 표면 처리 방법을 제공하는 것을 목적으로 한다.The purpose of the present invention is to provide a water-soluble preflux capable of forming an organic film with good heat resistance, and a surface treatment method.
본 발명의 일 양태에 의하면, (A) 이미다졸 화합물과, (B) 아민 화합물과, (C) 유기산과, (D) 물을 함유하고, 상기 (B) 성분이 (B1) 힌더드아민 화합물, 및 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물로 이루어지는 군으로부터 선택되는 적어도 1개를 함유하는 수용성 프리플럭스가 제공된다.According to one aspect of the present invention, it contains (A) an imidazole compound, (B) an amine compound, (C) an organic acid, and (D) water, and the component (B) is (B1) a hindered amine compound. , and (B2) an amine compound having an alkyl group having 10 or more carbon atoms.
본 발명의 일 양태에 의하면, 상기 본 발명의 일 양태에 의한 수용성 프리플럭스를 이용해서, 전자 기판의 전극 단자 상에 유기 피막을 형성하는 공정을 구비하는 표면 처리 방법이 제공된다.According to one aspect of the present invention, there is provided a surface treatment method comprising a step of forming an organic film on an electrode terminal of an electronic board using the water-soluble preflux according to the above-mentioned aspect of the present invention.
본 발명의 일 양태에 의하면, 내열성이 양호한 유기 피막을 형성할 수 있는 수용성 프리플럭스, 및 표면 처리 방법을 제공할 수 있다.According to one aspect of the present invention, a water-soluble preflux capable of forming an organic film with good heat resistance and a surface treatment method can be provided.
[수용성 프리플럭스] [Water-soluble preflux]
우선, 본 실시형태에 의한 수용성 프리플럭스 조성물에 대해서 설명한다. 본 실시형태에 의한 수용성 프리플럭스는 이하 설명하는 (A) 이미다졸 화합물과, (B) 아민 화합물과, (C) 유기산과, (D) 물을 함유하는 것이다. 또한, (B) 성분이 (B1) 힌더드아민 화합물, 및 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물로 이루어지는 군으로부터 선택되는 적어도 1개를 함유하는 것이 필요하다.First, the water-soluble preflux composition according to this embodiment will be described. The water-soluble preflux according to the present embodiment contains (A) an imidazole compound, (B) an amine compound, (C) an organic acid, and (D) water described below. Additionally, the component (B) must contain at least one selected from the group consisting of (B1) a hindered amine compound and (B2) an amine compound having an alkyl group having 10 or more carbon atoms.
본 실시형태에 의한 수용성 프리플럭스 조성물이, 내열성이 양호한 유기 피막을 형성할 수 있는 이유는 반드시 확실하지는 않지만, 본 발명자들은 이하와 같이 추측한다.The reason why the water-soluble preflux composition according to the present embodiment can form an organic film with good heat resistance is not necessarily clear, but the present inventors speculate as follows.
즉, 수용성 프리플럭스에 있어서의 유기 피막은 통상, (A) 이미다졸 화합물에 의해 형성되는 것이다. 이것에 대하여, 본 실시형태에 있어서는 (B1) 힌더드아민 화합물, 또는 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물이 유기 피막의 일부를 형성하고 있는 것이라고 추측된다. 그리고, 이들 (B1) 성분 또는 (B2) 성분에 의해, 유기 피막에 추가적인 산화 방지 작용이 부여된 것이라고 추측된다.That is, the organic film in the water-soluble preflux is usually formed by (A) an imidazole compound. In contrast, in this embodiment, it is assumed that (B1) a hindered amine compound or (B2) an amine compound having an alkyl group having 10 or more carbon atoms forms a part of the organic film. It is presumed that these components (B1) or (B2) provide an additional antioxidant effect to the organic film.
[(A) 성분][(A) component]
본 실시형태에 이용하는 (A) 이미다졸 화합물로서는, 이미다졸류, 및 벤조이미다졸류를 들 수 있다. 이것들은 1종을 단독으로 이용해도 좋고, 2종 이상을 혼합해서 이용해도 좋다.Examples of the (A) imidazole compound used in this embodiment include imidazole and benzoimidazole. These may be used individually or in combination of two or more types.
이미다졸류로서는, 2-펜틸이미다졸, 2-운데실-4-메틸이미다졸, 2,4-디메틸이미다졸, 2-페닐이미다졸, 2-톨루일이미다졸, 2-페닐-4-메틸이미다졸, 2-페닐-4-벤질이미다졸, 2-페닐-4-메틸-5-벤질이미다졸, 2,4-디페닐이미다졸, 2,4,5-트리페닐이미다졸, 2-벤질이미다졸, 2-벤질-4-메틸이미다졸, 2-페닐에틸이미다졸, 2-(2-페닐에틸)이미다졸, 및 2-(2-페닐펜틸)이미다졸 등을 들 수 있다.Examples of imidazole include 2-pentylimidazole, 2-undecyl-4-methylimidazole, 2,4-dimethylimidazole, 2-phenylimidazole, 2-toluylimidazole, 2- Phenyl-4-methylimidazole, 2-phenyl-4-benzylimidazole, 2-phenyl-4-methyl-5-benzylimidazole, 2,4-diphenylimidazole, 2,4,5 -triphenylimidazole, 2-benzylimidazole, 2-benzyl-4-methylimidazole, 2-phenylethylimidazole, 2-(2-phenylethyl)imidazole, and 2-(2- Phenylpentyl)imidazole, etc. can be mentioned.
벤조이미다졸류로서는, 2-프로필벤조이미다졸, 2-펜틸벤조이미다졸, 2-옥틸벤조이미다졸, 2-노닐벤조이미다졸, 2-헥실-5-메틸벤조이미다졸, 2-(2-메틸프로필)벤조이미다졸, 2-(1-에틸프로필)벤조이미다졸, 2-(1-에틸펜틸)벤조이미다졸, 2-시클로헥실벤조이미다졸, 2-(2-시클로헥실에틸)벤조이미다졸, 2-(5-시클로헥실펜틸)벤조이미다졸, 2-페닐벤조이미다졸, 2-페닐-5-메틸벤조이미다졸, 2-벤질벤조이미다졸, 2-(2-페닐에틸)벤조이미다졸, 2-(5-페닐펜틸)벤조이미다졸, 2-(3-페닐프로필)-5-메틸벤조이미다졸, 2-(4-클로로벤질)벤조이미다졸, 2-(3,4-디클로로벤질)벤조이미다졸, 2-(2,4-디클로로벤질)벤조이미다졸, 2-(메르캅토메틸)벤조이미다졸, 2-(2-아미노에틸)벤조이미다졸, 2,2'-에틸렌디벤조이미다졸, 2-(1-나프틸메틸)벤조이미다졸, 2-(2-피리딜)벤조이미다졸, 2-(2-페닐비닐)벤조이미다졸, 2-(페녹시메틸)벤조이미다졸, 2-[(4-메틸페닐)메틸]-1H-벤조이미다졸, 2-[(4-클로로페닐)메틸]-1H-벤조이미다졸, 및 2-(페녹시메틸)-5-메틸벤조이미다졸 등을 들 수 있다.As benzoimidazoles, 2-propylbenzimidazole, 2-pentylbenzimidazole, 2-octylbenzimidazole, 2-nonylbenzimidazole, 2-hexyl-5-methylbenzimidazole, 2-(2- Methylpropyl)benzoimidazole, 2-(1-ethylpropyl)benzoimidazole, 2-(1-ethylpentyl)benzoimidazole, 2-cyclohexylbenzimidazole, 2-(2-cyclohexylethyl)benzoimidazole Dazole, 2-(5-cyclohexylpentyl)benzoimidazole, 2-phenylbenzoimidazole, 2-phenyl-5-methylbenzoimidazole, 2-benzylbenzimidazole, 2-(2-phenylethyl)benzoimidazole Dazole, 2-(5-phenylpentyl)benzoimidazole, 2-(3-phenylpropyl)-5-methylbenzoimidazole, 2-(4-chlorobenzyl)benzoimidazole, 2-(3,4-dichloro) Benzyl)benzoimidazole, 2-(2,4-dichlorobenzyl)benzoimidazole, 2-(mercaptomethyl)benzoimidazole, 2-(2-aminoethyl)benzoimidazole, 2,2'-ethylenedi Benzoimidazole, 2-(1-naphthylmethyl)benzoimidazole, 2-(2-pyridyl)benzoimidazole, 2-(2-phenylvinyl)benzoimidazole, 2-(phenoxymethyl)benzoimidazole Dazole, 2-[(4-methylphenyl)methyl]-1H-benzoimidazole, 2-[(4-chlorophenyl)methyl]-1H-benzoimidazole, and 2-(phenoxymethyl)-5-methylbenzo Imidazole, etc. can be mentioned.
(A) 성분의 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.01질량% 이상 10질량% 이하인 것이 바람직하고, 0.05질량% 이상 5질량% 이하인 것이 보다 바람직하다. (A) 성분의 배합량이 상기 하한 이상이면, 방청막 등의 유기 피막을 보다 형성하기 쉽게 할 수 있다. 또한, (A) 성분의 배합량이 상기 상한 이하이면, 불용해분이 많아지는 경우도 없어, 경제적으로도 바람직하다.The amount of component (A) mixed is preferably 0.01% by mass or more and 10% by mass or less, and more preferably 0.05% by mass or more and 5% by mass or less, based on 100% by mass of the water-soluble preflux. When the compounding amount of component (A) is more than the above lower limit, it is possible to more easily form an organic film such as a rust-prevention film. Moreover, if the compounding amount of component (A) is below the above upper limit, insoluble matter does not increase, and it is economically preferable.
[(B) 성분][(B) Ingredient]
본 실시형태에 이용하는 (B) 아민 화합물은 (B1) 힌더드아민 화합물, 및 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물로 이루어지는 군으로부터 선택되는 적어도 1개를 함유하는 것이 필요하다. 이들 (B1) 성분 또는 (B2) 성분에 의해, 유기 피막의 리플로우 내열성을 향상시킬 수 있다. 이것들은 1종을 단독으로 이용해도 좋고, 2종 이상을 혼합해서 이용해도 좋다.The amine compound (B) used in this embodiment must contain at least one selected from the group consisting of (B1) a hindered amine compound and (B2) an amine compound having an alkyl group having 10 or more carbon atoms. The reflow heat resistance of the organic film can be improved by these components (B1) or (B2). These may be used individually or in combination of two or more types.
(B1) 성분은 하기 일반식(B1)으로 나타내어지는 구조를 갖는 것이다.The component (B1) has a structure represented by the following general formula (B1).
일반식(B1)에 있어서, R1은 독립적으로 메틸기, 또는 에틸기이며, 메틸기인 것이 바람직하다.In general formula (B1), R 1 is independently a methyl group or an ethyl group, and is preferably a methyl group.
X는 수소, 탄소수 1 내지 12의 알킬기, 또는 탄소수 1 내지 12의 알콕시기이다. 또한, X가 수소인 경우에는 하기 일반식(B1-1)으로 나타내어지는 구조이다. X가 탄소수 1 내지 12의 알킬기인 경우에는 하기 일반식(B1-2)으로 나타내어지는 구조이다. X가 탄소수 1 내지 12의 알콕시기인 경우에는 하기 일반식(B1-3)으로 나타내어지는 구조이다.X is hydrogen, an alkyl group having 1 to 12 carbon atoms, or an alkoxy group having 1 to 12 carbon atoms. In addition, when X is hydrogen, it has a structure represented by the following general formula (B1-1). When X is an alkyl group having 1 to 12 carbon atoms, it has a structure represented by the following general formula (B1-2). When X is an alkoxy group having 1 to 12 carbon atoms, it has a structure represented by the following general formula (B1-3).
또한, (B1) 성분에 있어서, 파선보다 앞 부분의 구조는 특별히 한정되지 않는다.In addition, in component (B1), the structure of the part before the broken line is not particularly limited.
(B1) 성분의 1분자 중에 있어서의 일반식(B1)으로 나타내어지는 구조의 수는 1 이상 10 이하인 것이 바람직하고, 2 이상 4 이하인 것이 보다 바람직하다.(B1) The number of structures represented by general formula (B1) in one molecule of component is preferably 1 to 10, and more preferably 2 to 4.
일반식(B1-1)에 있어서, R1은 독립적으로 메틸기, 또는 에틸기이며, 메틸기인 것이 바람직하다.In general formula (B1-1), R 1 is independently a methyl group or an ethyl group, and is preferably a methyl group.
일반식(B1-1)으로 나타내어지는 구조를 갖는 화합물로서는, 비스(2,2,6,6-테트라메틸-4-피페리딜)세바케이트, 테트라키스(2,2,6,6-테트라메틸-4-피페리딜)부탄-1,2,3,4-테트라카르복실레이트, 및 2,2,6,6-테트라메틸-4-피페리딜메타크릴레이트 등을 들 수 있다.Compounds having a structure represented by general formula (B1-1) include bis(2,2,6,6-tetramethyl-4-piperidyl)sebacate, tetrakis(2,2,6,6-tetra Examples include methyl-4-piperidyl)butane-1,2,3,4-tetracarboxylate, and 2,2,6,6-tetramethyl-4-piperidyl methacrylate.
일반식(B1-2)에 있어서, R1은 독립적으로 메틸기, 또는 에틸기이며, 메틸기인 것이 바람직하다.In general formula (B1-2), R 1 is independently a methyl group or an ethyl group, and is preferably a methyl group.
R2는 탄소수 1 내지 12의 알킬기이며, 탄소수 1 내지 8의 알킬기인 것이 바람직하고, 탄소수 1 내지 3의 알킬기인 것이 보다 바람직하며, 메틸기인 것이 특히 바람직하다.R 2 is an alkyl group with 1 to 12 carbon atoms, preferably an alkyl group with 1 to 8 carbon atoms, more preferably an alkyl group with 1 to 3 carbon atoms, and particularly preferably a methyl group.
일반식(B1-2)으로 나타내어지는 구조를 갖는 화합물로서는, 비스(1,2,2,6,6-펜타메틸-4-피페리딜)-[[3,5-비스(1,1-디메틸에틸)-4-히드록시페닐]에틸]부틸말로네이트, 비스(1,2,2,6,6-펜타메틸-4-피페리딜)세바케이트, 1-(메틸)-8-(1,2,2,6,6-펜타메틸-4-피페리딜)세바케이트, 테트라키스(1,2,2,6,6-펜타메틸-4-피페리딜)부탄-1,2,3,4-테트라카르복실레이트, 및 1,2,2,6,6-펜타메틸-4-피페리딜메타크릴레이트 등을 들 수 있다.Examples of compounds having a structure represented by general formula (B1-2) include bis(1,2,2,6,6-pentamethyl-4-piperidyl)-[[3,5-bis(1,1- Dimethylethyl)-4-hydroxyphenyl]ethyl]butylmalonate, bis(1,2,2,6,6-pentamethyl-4-piperidyl)sebacate, 1-(methyl)-8-(1 ,2,2,6,6-pentamethyl-4-piperidyl)sebacate, tetrakis(1,2,2,6,6-pentamethyl-4-piperidyl)butane-1,2,3 , 4-tetracarboxylate, and 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate.
일반식(B1-3)에 있어서, R1은 독립적으로 메틸기, 또는 에틸기이며, 메틸기인 것이 바람직하다.In general formula (B1-3), R 1 is independently a methyl group or an ethyl group, and is preferably a methyl group.
R3은 탄소수 1 내지 12의 알킬기이며, 탄소수 4 내지 11의 알킬기인 것이 바람직하고, 탄소수 8 내지 11의 알킬기인 것이 보다 바람직하며, 옥틸기 또는 운데실기인 것이 특히 바람직하다.R 3 is an alkyl group with 1 to 12 carbon atoms, preferably an alkyl group with 4 to 11 carbon atoms, more preferably an alkyl group with 8 to 11 carbon atoms, and particularly preferably an octyl group or an undecyl group.
일반식(B1-3)으로 나타내어지는 구조를 갖는 화합물로서는, 비스(1-옥틸옥시-2,2,6,6-테트라메틸-4-피페리딜)세바케이트, 및 비스(1-운데카옥시-2,2,6,6-테트라메틸피페리딘-4-일)카보네이트 등을 들 수 있다.Compounds having a structure represented by general formula (B1-3) include bis(1-octyloxy-2,2,6,6-tetramethyl-4-piperidyl)sebacate, and bis(1-undeca). Oxy-2,2,6,6-tetramethylpiperidin-4-yl)carbonate, etc. are mentioned.
(B1) 성분의 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.1질량% 이상 10질량% 이하인 것이 바람직하고, 0.3질량% 이상 5질량% 이하인 것이 보다 바람직하며, 0.5질량% 이상 2질량% 이하인 것이 특히 바람직하다. (B1) 성분의 배합량이 상기 하한 이상이면, 형성되는 유기 피막의 내열성을 보다 높일 수 있다. 또한, (B1) 성분의 배합량이 상기 상한 이하이면, 수용성 프리플럭스의 연속 사용 시에, (B1) 성분의 양이 과잉이 되기 어렵다고 하는 점에서 바람직하다.The amount of component (B1) mixed is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 5% by mass or less, and 0.5% by mass or more and 2% by mass or less, based on 100% by mass of the water-soluble preflux. Particularly desirable. If the compounding amount of component (B1) is more than the above lower limit, the heat resistance of the organic film formed can be further improved. In addition, it is preferable that the amount of component (B1) is less than the above upper limit because it is difficult for the amount of component (B1) to become excessive during continuous use of the water-soluble preflux.
마찬가지의 관점에서, (B1) 성분의 (A) 성분에 대한 질량비((B1)/(A))는 1/5 이상 5/1 이하인 것이 바람직하고, 1/2 이상 4/1 이하인 것이 보다 바람직하며, 1/1 이상 3/1 이하인 것이 특히 바람직하다.From the same viewpoint, the mass ratio ((B1)/(A)) of component (B1) to component (A) is preferably 1/5 or more and 5/1 or less, and more preferably 1/2 or more and 4/1 or less. And, it is particularly preferable that it is 1/1 or more and 3/1 or less.
(B2) 성분은 탄소수 10 이상의 알킬기를 갖는 아민 화합물이다.Component (B2) is an amine compound having an alkyl group having 10 or more carbon atoms.
탄소수 10 이상의 알킬기로서는, 데실기, 도데실기, 테트라데실기, 헥사데실기, 옥타데실기, 및 이코실기 등을 들 수 있다. 이들 중에서도, 데실기, 또는 도데실기가 바람직하다.Examples of alkyl groups having 10 or more carbon atoms include decyl group, dodecyl group, tetradecyl group, hexadecyl group, octadecyl group, and icosyl group. Among these, decyl group or dodecyl group is preferable.
아민 화합물의 1분자 중에, 탄소수 10 이상의 알킬기가 1개 이상 있으면 되고, 2개 있어도 좋으며, 3개 있어도 좋다.In one molecule of the amine compound, there may be at least one alkyl group having 10 or more carbon atoms, two may be present, or three may be present.
아민 화합물은 1급 아민이어도 좋고, 2급 아민이어도 좋으며, 3급 아민이어도 좋다.The amine compound may be a primary amine, a secondary amine, or a tertiary amine.
(B2) 성분으로서는, 데실아민, 도데실아민, N,N-디메틸데실아민, 및 N,N-디메틸도데실아민 등을 들 수 있다.(B2) Components include decylamine, dodecylamine, N,N-dimethyldecylamine, and N,N-dimethyldodecylamine.
(B2) 성분의 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.1질량% 이상 10질량% 이하인 것이 바람직하고, 0.2질량% 이상 5질량% 이하인 것이 보다 바람직하며, 0.3질량% 이상 2질량% 이하인 것이 특히 바람직하다. (B2) 성분의 배합량이 상기 하한 이상이면, 형성되는 유기 피막의 내열성을 보다 높일 수 있다. 또한, (B2) 성분의 배합량이 상기 상한 이하이면, 수용성 프리플럭스의 연속 사용 시에, (B2) 성분의 양이 과잉이 되기 어렵다고 하는 점에서 바람직하다.The amount of component (B2) mixed is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.2% by mass or more and 5% by mass or less, and 0.3% by mass or more and 2% by mass or less, based on 100% by mass of the water-soluble preflux. Particularly desirable. (B2) If the compounding amount of component is more than the above lower limit, the heat resistance of the organic film formed can be further improved. In addition, it is preferable that the amount of component (B2) is less than the above upper limit because it is difficult for the amount of component (B2) to become excessive during continuous use of the water-soluble preflux.
마찬가지의 관점에서, (B2) 성분의 (A) 성분에 대한 질량비((B2)/(A))는 1/5 이상 5/1 이하인 것이 바람직하고, 1/2 이상 4/1 이하인 것이 보다 바람직하며, 1/1 이상 3/1 이하인 것이 특히 바람직하다.From the same viewpoint, the mass ratio ((B2)/(A)) of component (B2) to component (A) is preferably 1/5 or more and 5/1 or less, and more preferably 1/2 or more and 4/1 or less. And, it is particularly preferable that it is 1/1 or more and 3/1 or less.
(B) 성분은 본 발명의 과제를 달성할 수 있는 범위에 있어서, (B1) 성분 및 (B2) 성분 이외에, 그 외의 아민 화합물(이하, (B3) 성분이라고도 칭한다)을 더 함유해도 좋다. (B3) 성분으로서는, (B1) 성분 및 (B2) 성분 이외의 아민 화합물을 들 수 있다. 단, (B3) 성분이 유기 피막에 악영향을 줄 수 있다고 하는 관점에서, (B) 성분은 (B1) 성분 및 (B2) 성분을 사용하는 것이 바람직하다. 또한, (B1) 성분 및 (B2) 성분의 합계 배합량은 (B) 성분 100질량%에 대하여, 80질량% 이상인 것이 바람직하고, 90질량% 이상인 것이 보다 바람직하다.Component (B) may further contain other amine compounds (hereinafter also referred to as component (B3)) in addition to component (B1) and component (B2), within the range that can achieve the object of the present invention. Examples of the component (B3) include amine compounds other than the component (B1) and (B2). However, from the viewpoint that component (B3) may adversely affect the organic film, it is preferable to use component (B1) and component (B2) as component (B). Moreover, the total compounding amount of component (B1) and component (B2) is preferably 80% by mass or more, and more preferably 90% by mass or more, based on 100% by mass of component (B).
(B) 성분의 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.1질량% 이상 10질량% 이하인 것이 바람직하고, 0.3질량% 이상 5질량% 이하인 것이 보다 바람직하며, 0.5질량% 이상 2질량% 이하인 것이 특히 바람직하다. (B) 성분의 배합량이 상기 하한 이상이면, 형성되는 유기 피막의 내열성을 보다 높일 수 있다. 또한, (B) 성분의 배합량이 상기 상한 이하이면, 수용성 프리플럭스의 연속 사용 시에, (B) 성분의 양이 과잉이 되기 어렵다고 하는 점에서 바람직하다.The amount of component (B) mixed is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 5% by mass or less, and 0.5% by mass or more and 2% by mass or less, based on 100% by mass of the water-soluble preflux. Particularly desirable. If the compounding amount of component (B) is more than the above lower limit, the heat resistance of the organic film formed can be further improved. In addition, it is preferable that the amount of component (B) is less than the above upper limit because it is difficult for the amount of component (B) to become excessive during continuous use of the water-soluble preflux.
[(C) 성분][(C) component]
본 실시형태에 이용하는 (C) 유기산으로서는, 포름산, 아세트산, 프로피온산, 부탄산, 에난트산, 글리콜산, 주석산, 락트산, 클로로아세트산, 디클로로아세트산, 트리클로로아세트산, 브로모아세트산, 및 메톡시아세트산 등을 들 수 있다. 이들 중에서도, (A) 성분을 수용화시킨다고 하는 관점에서, 포름산, 아세트산, 또는 에난트산을 이용하는 것이 바람직하고, 아세트산 또는 에난트산을 이용하는 것이 특히 바람직하다. 또한, 이것들은 1종을 단독으로 이용해도 좋고, 2종 이상을 혼합해서 이용해도 좋다.Examples of (C) organic acids used in this embodiment include formic acid, acetic acid, propionic acid, butanoic acid, enanthic acid, glycolic acid, tartaric acid, lactic acid, chloroacetic acid, dichloroacetic acid, trichloroacetic acid, bromoacetic acid, and methoxyacetic acid. I can hear it. Among these, from the viewpoint of making component (A) water-soluble, it is preferable to use formic acid, acetic acid, or enanthic acid, and it is especially preferable to use acetic acid or enanthic acid. In addition, these may be used individually by 1 type, or 2 or more types may be mixed and used.
(C) 성분의 배합량은 수용성 프리플럭스 100질량%에 대하여, 1질량% 이상 40질량% 이하인 것이 바람직하고, 2질량% 이상 30질량% 이하인 것이 보다 바람직하다. (B) 성분의 배합량이 상기 범위 내이면, (C) 성분을 충분히 수용화시킬 수 있다.The amount of component (C) mixed is preferably 1% by mass or more and 40% by mass or less, and more preferably 2% by mass or more and 30% by mass or less, based on 100% by mass of the water-soluble preflux. If the compounding amount of component (B) is within the above range, component (C) can be sufficiently dissolved in water.
[(D) 성분][(D) component]
본 실시형태에 이용하는 (D) 물은 수용성 프리플럭스에 있어서의 (A) 성분, (B) 성분 및 (C) 성분, 및 이하 설명하는 다른 성분 이외의 잔부이다.(D) water used in this embodiment is the remainder other than component (A), component (B), and component (C) in the water-soluble preflux, and other components described below.
[(E) 성분][(E) component]
본 실시형태에 의한 수용성 프리플럭스는 (E) 컴플렉산 화합물을 더 함유하는 것이 바람직하다. 이 (E) 성분에 의해, 수용성 프리플럭스 처리액의 안정성을 향상시킬 수 있다. It is preferable that the water-soluble preflux according to the present embodiment further contains (E) a complex acid compound. The stability of the water-soluble preflux treatment liquid can be improved by this component (E).
컴플렉산 화합물로서는, 에틸렌디아민4아세트산 나트륨철, 및 에틸렌디아민4아세트산 4나트륨 수화물 등을 들 수 있다.Examples of complex acid compounds include sodium iron ethylenediaminetetraacetate and tetrasodium ethylenediaminetetraacetic acid hydrate.
(E) 성분을 사용하는 경우, 그 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.01질량% 이상 10질량% 이하인 것이 바람직하고, 0.05질량% 이상 5질량% 이하인 것이 보다 바람직하다.When using component (E), the mixing amount is preferably 0.01% by mass or more and 10% by mass or less, and more preferably 0.05% by mass or more and 5% by mass or less, based on 100% by mass of the water-soluble preflux.
[(F) 성분][(F) component]
본 실시형태에 의한 수용성 프리플럭스는 (F) 착체 피막 형성 조제를 더 함유하는 것이 바람직하다. 단, 구리와의 착체 피막 형성 조제를 첨가하면 조건에 따라서는, 기판의 금 도금 상에도 피막을 형성해서, 금 도금의 변색이 발생하는 경우가 있으므로 주의가 필요하다.It is preferable that the water-soluble preflux according to the present embodiment further contains (F) a complex film forming aid. However, when an additive for forming a complex film with copper is added, depending on the conditions, a film may be formed on the gold plating of the substrate, which may cause discoloration of the gold plating, so caution is required.
착체 피막 형성 조제로서는, 포름산 구리, 염화 제 1 구리, 염화 제 2 구리, 옥살산 구리, 아세트산 구리, 수산화구리, 탄산 구리, 인산 구리, 황산 구리, 포름산 망간, 염화망간, 옥살산 망간, 황산 망간, 아세트산 아연, 아세트산 납, 아세트산 니켈, 아세트산 바륨, 수소화아연, 염화 제 1 철, 염화 제 2 철, 산화 제 1 철 산화 제 2 철, 요오드화구리, 브롬화 제 1 구리, 및 브롬화 제 2 구리 등의 금속 화합물을 들 수 있다. 이들 착체 피막 형성 조제는 1종을 단독으로 이용해도 좋고, 2종 이상을 혼합해서 이용해도 좋다.As complex film forming aids, copper formate, cuprous chloride, cupric chloride, copper oxalate, copper acetate, copper hydroxide, copper carbonate, copper phosphate, copper sulfate, manganese formate, manganese chloride, manganese oxalate, manganese sulfate, acetic acid. Metal compounds such as zinc, lead acetate, nickel acetate, barium acetate, zinc hydride, ferrous chloride, ferric chloride, ferrous oxide, copper iodide, cuprous bromide, and cupric bromide. can be mentioned. These complex film forming aids may be used individually, or two or more types may be mixed.
(F) 성분을 사용하는 경우, 그 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.01질량% 이상 10질량% 이하인 것이 바람직하고, 0.05질량% 이상 5질량% 이하인 것이 보다 바람직하다.When using component (F), the mixing amount is preferably 0.01% by mass or more and 10% by mass or less, and more preferably 0.05% by mass or more and 5% by mass or less, based on 100% by mass of the water-soluble preflux.
[다른 성분][Other ingredients]
본 실시형태에 의한 수용성 프리플럭스는 본 발명의효과를 저해하지 않는 범위에서, 유기 용제, 완충액, 및 첨가제 등을 함유하고 있어도 좋다.The water-soluble preflux according to this embodiment may contain organic solvents, buffer solutions, additives, etc., as long as they do not impair the effects of the present invention.
유기 용제로서는, 메탄올, 에탄올, 및 아세톤 등을 들 수 있다.Examples of organic solvents include methanol, ethanol, and acetone.
완충액 중의 염기로서는, 암모니아, 디에틸아민, 트리에틸아민, 디에탄올아민, 트리에탄올아민, 모노에탄올아민, 디메틸에탄올아민, 디에틸에탄올아민, 이소프로필에탄올아민, 수산화나트륨, 및 수산화칼륨 등을 들 수 있다.Bases in the buffer include ammonia, diethylamine, triethylamine, diethanolamine, triethanolamine, monoethanolamine, dimethylethanolamine, diethylethanolamine, isopropylethanolamine, sodium hydroxide, and potassium hydroxide. there is.
이것들을 사용하는 경우, 그 배합량은 수용성 프리플럭스 100질량%에 대하여, 0.01질량% 이상 10질량% 이하인 것이 바람직하고, 0.05질량% 이상 5질량% 이하인 것이 보다 바람직하다.When these are used, the mixing amount is preferably 0.01% by mass or more and 10% by mass or less, and more preferably 0.05% by mass or more and 5% by mass or less, based on 100% by mass of the water-soluble preflux.
[표면 처리 방법][Surface treatment method]
이어서, 본 실시형태에 의한 표면 처리 방법에 대해서 설명한다.Next, the surface treatment method according to this embodiment will be described.
본 실시형태에 의한 표면 처리 방법은 본 실시형태에 의한 수용성 프리플럭스를 이용해서, 전자 기판의 전극 단자 상에 유기 피막을 형성하는 공정을 구비하는 방법이다.The surface treatment method according to this embodiment is a method comprising the step of forming an organic film on an electrode terminal of an electronic board using the water-soluble preflux according to this embodiment.
전자 기판으로서는, 프린트 배선 기판 및 반도체용 기판 등을 들 수 있다.Examples of electronic boards include printed wiring boards and semiconductor boards.
유기 피막의 형성 방법으로서는, 예를 들면 처리 대상의 프린트 배선 기판의 전극 단자의 표면을 탈지, 화학 연마(소프트 에칭), 산세, 수세하는 전처리 공정을 실시한 후, 수용성 프리플럭스에 10∼60℃에서 1초간∼100분간(바람직하게는 20∼50℃에서 5초간∼60분간, 보다 바람직하게는 20∼50℃에서 10초간∼10분간) 프린트 배선 기판을 침지하는 방법을 채용할 수 있다. 이와 같이 해서, 이미다졸 화합물은 전극 단자의 표면에 부착되지만, 그 부착량은 처리 온도를 높게, 처리 시간을 길게 할수록 많아진다. 이 때에, 초음파를 이용하면 보다 바람직하다. 또한, 다른 도포 수단, 예를 들면 분무법, 솔칠, 롤러칠 등으로 유기 피막을 형성해도 좋다.As a method of forming an organic film, for example, the surface of the electrode terminal of the printed wiring board to be treated is subjected to a pretreatment process of degreasing, chemical polishing (soft etching), pickling, and water washing, and then soaked in a water-soluble preflux at 10 to 60°C. A method of immersing the printed wiring board for 1 second to 100 minutes (preferably 5 seconds to 60 minutes at 20 to 50°C, more preferably 10 seconds to 10 minutes at 20 to 50°C) can be adopted. In this way, the imidazole compound adheres to the surface of the electrode terminal, but the amount of adhesion increases as the treatment temperature is raised and the treatment time is prolonged. At this time, it is more preferable to use ultrasonic waves. Additionally, the organic film may be formed by other application means, such as spraying, brushing, roller coating, etc.
이상과 같이 해서, 전자 기판 상에 유기 피막(방청막 등)을 형성할 수 있다.In the above manner, an organic film (rust-prevention film, etc.) can be formed on the electronic substrate.
실시예Example
이어서, 본 발명을 실시예 및 비교예에 의해 더 상세하게 설명하지만, 본 발명은 이들 예에 의해 전혀 한정되는 것은 아니다. 또한, 실시예 및 비교예에서 이용한 재료를 이하에 나타낸다.Next, the present invention will be described in more detail by way of Examples and Comparative Examples, but the present invention is in no way limited by these examples. In addition, the materials used in the examples and comparative examples are shown below.
((A) 성분)((A) component)
이미다졸 화합물 A: 2,4-디페닐이미다졸Imidazole Compound A: 2,4-diphenylimidazole
이미다졸 화합물 B: 2-[(4-메틸페닐)메틸]-1H-벤조이미다졸Imidazole Compound B: 2-[(4-methylphenyl)methyl]-1H-benzoimidazole
이미다졸 화합물 C: 2-[(4-클로로페닐)메틸]-1H-벤조이미다졸Imidazole Compound C: 2-[(4-chlorophenyl)methyl]-1H-benzoimidazole
이미다졸 화합물 D: 2-페닐벤조이미다졸Imidazole Compound D: 2-phenylbenzimidazole
((B1) 성분)((B1) component)
아민 화합물 A: 1분자 중에 일반식(B1-1)으로 나타내어지는 구조를 2개 갖는 힌더드아민 화합물, 비스(2,2,6,6-테트라메틸-4-피페리딜)세바케이트, 상품명 「Tinuvin 770DF」, BASF Corp.제Amine compound A: hindered amine compound having two structures represented by general formula (B1-1) in one molecule, bis(2,2,6,6-tetramethyl-4-piperidyl)sebacate, brand name “Tinuvin 770DF”, manufactured by BASF Corp.
((B2) 성분)((B2) component)
아민 화합물 B: N,N-디메틸데실아민Amine compound B: N,N-dimethyldecylamine
((B3) 성분)((B3) component)
아민 화합물 C: N-페닐에틸렌디아민Amine compound C: N-phenylethylenediamine
아민 화합물 D: 옥틸아민Amine Compound D: Octylamine
((C) 성분)((C) component)
유기산 A: 아세트산Organic Acid A: Acetic Acid
유기산 B: 에난트산Organic Acid B: Enanthic Acid
((D) 성분)((D) component)
물: 순수water: pure
((E) 성분)((E) component)
컴플렉산 화합물 A: 에틸렌디아민4아세트산 나트륨철, Kishida Chemical Co.,Ltd.제Complex acid compound A: Sodium iron ethylenediaminetetraacetate, manufactured by Kishida Chemical Co., Ltd.
컴플렉산 화합물 B: 에틸렌디아민4아세트산 4나트륨 수화물Complexan compound B: ethylenediaminetetraacetic acid tetrasodium hydrate
((F) 성분)((F) component)
착체 피막 형성 조제 A: 염화 제 2 철(염화철(III))Complex film forming aid A: Ferric chloride (Iron(III) chloride)
착체 피막 형성 조제 B: 아세트산 아연2수화물Complex film forming aid B: Zinc acetate dihydrate
(다른 성분)(other ingredients)
pH 조정제: 암모니아수, Kishida Chemical Co.,Ltd.제pH adjuster: ammonia water, manufactured by Kishida Chemical Co., Ltd.
[실시예 1][Example 1]
물 83.4질량%에 대하여, 이미다졸 화합물 A 0.3질량%, 유기산 A 15질량%, 유기산 B 0.1질량%, 아민 화합물 A 0.9질량%, 및 컴플렉산 화합물 A 0.3질량%를 용해시켜 수용성 프리플럭스를 얻었다. 또한, 얻어진 수용성 프리플럭스는 완충액(pH 조정제)으로서 25질량% 암모니아수로 pH 조정하여, 피막을 형성 가능한 수용성 프리플럭스 처리액으로 했다.A water-soluble preflux was obtained by dissolving 0.3% by mass of imidazole compound A, 15% by mass of organic acid A, 0.1% by mass of organic acid B, 0.9% by mass of amine compound A, and 0.3% by mass of complex acid compound A in 83.4% by mass of water. . Additionally, the pH of the obtained water-soluble preflux was adjusted with 25 mass% aqueous ammonia as a buffer (pH adjuster) to obtain a water-soluble preflux treatment solution capable of forming a film.
[실시예 2∼8][Examples 2 to 8]
표 1에 나타내는 조성을 따라서 각 재료를 배합한 것 이외에는 실시예 1과 마찬가지로 해서 수용성 프리플럭스 및 처리액을 얻었다.A water-soluble preflux and a treatment solution were obtained in the same manner as in Example 1, except that each material was mixed according to the composition shown in Table 1.
[비교예 1∼3][Comparative Examples 1 to 3]
표 1에 나타내는 조성을 따라서 각 재료를 배합한 것 이외에는 실시예 1과 마찬가지로 해서 수용성 프리플럭스 및 처리액을 얻었다.A water-soluble preflux and a treatment solution were obtained in the same manner as in Example 1, except that each material was mixed according to the composition shown in Table 1.
<수용성 프리플럭스의 평가><Evaluation of water-soluble preflux>
수용성 프리플럭스의 성능(외관, 리플로우 내열성)을 이하와 같은 방법으로 평가했다. 얻어진 결과를 표 1에 나타낸다.The performance (appearance, reflow heat resistance) of the water-soluble preflux was evaluated in the following manner. The obtained results are shown in Table 1.
(1) 외관(1) Appearance
양면 동장 적층판(크기: 7.5㎜×50㎜, 두께: 2㎜)을 탈지, 소프트 에칭 및 수세해서 표면을 청정하게 한 후, 수용성 프리플럭스 처리액에 40℃에서 2분간 침지하고, 피막 형성해서, 수세, 온풍 건조시켜 시험 기판을 얻었다. 이 시험 기판에 대해서, 외관을 관찰하고, 하기 기준을 따라서 평가했다.Double-sided copper-clad laminate (size: 7.5 mm After washing with water and drying with warm air, a test board was obtained. About this test board, the appearance was observed and evaluated according to the following standards.
A: 불균일이나 줄무늬가 보이지 않는다.A: No unevenness or stripes are visible.
C: 불균일이나 줄무늬가 보인다.C: Irregularities or stripes are visible.
(2) 리플로우 내열성(2) Reflow heat resistance
구리판(크기: 50㎜×50㎜, 두께: 0.5㎜)을 탈지, 소프트 에칭 및 수세해서 표면을 청정하게 한 후, 수용성 프리플럭스 처리액에 40℃에서 2분간 침지하고, 피막 형성해서, 수세, 온풍 건조시켜 시험 기판을 얻었다.After cleaning the surface of a copper plate (size: 50 mm It was dried with warm air to obtain a test board.
이 시험 기판에 대하여, 리플로우 처리(프리히트: 150∼190℃에서 약 70초간, 용융 온도: 220℃ 이상에서 약 40초간, 피크 온도: 250℃)를 3회 실시하고, 땜납 조성물(Tamura Corporation제, 솔더 페이스트 「TLF-204-171A」)을 이용해서, 디웨팅 시험을 행했다. 그리고, 이하의 기준을 따라서, 리플로우 내열성을 평가했다.For this test board, reflow processing (preheat: 150 to 190°C for about 70 seconds, melt temperature: 220°C or higher for about 40 seconds, peak temperature: 250°C) was performed three times, and a solder composition (Tamura Corporation) was applied. A dewetting test was performed using the second solder paste “TLF-204-171A”). Then, reflow heat resistance was evaluated according to the following standards.
A: 땜납의 젖음성이 양호했다.A: The wettability of the solder was good.
C: 땜납에 뭉침이 보여졌다.C: Clumps were seen in the solder.
표 1에 나타내는 결과에서도 명확한 바와 같이, 본 발명의 수용성 프리플럭스(실시예 1∼8)에 대해서는, 외관, 및 리플로우 내열성 모두가 양호한 것이 확인되었다. 그 때문에, 본 발명에 의하면 내열성이 양호한 유기 피막을 형성할 수 있는 수용성 프리플럭스가 얻어지는 것이 확인되었다.As is clear from the results shown in Table 1, it was confirmed that the water-soluble preflux (Examples 1 to 8) of the present invention had both good appearance and reflow heat resistance. Therefore, it was confirmed that according to the present invention, a water-soluble preflux capable of forming an organic film with good heat resistance is obtained.
Claims (4)
상기 (B) 성분이 (B1) 힌더드아민 화합물, 및 (B2) 탄소수 10 이상의 알킬기를 갖는 아민 화합물로 이루어지는 군으로부터 선택되는 적어도 1개를 함유하는 수용성 프리플럭스.Contains (A) an imidazole compound, (B) an amine compound, (C) an organic acid, and (D) water,
A water-soluble preflux wherein the component (B) contains at least one selected from the group consisting of (B1) a hindered amine compound and (B2) an amine compound having an alkyl group having 10 or more carbon atoms.
(E) 컴플렉산 화합물을 더 함유하는 수용성 프리플럭스.According to claim 1,
(E) Water-soluble preflux further containing a complexan compound.
(F) 착체 피막 형성 조제를 더 함유하는 수용성 프리플럭스.The method of claim 1 or 2,
(F) Water-soluble preflux further containing a complex film forming aid.
A surface treatment method comprising the step of forming an organic film on an electrode terminal of an electronic board using the water-soluble preflux according to claim 1 or 2.
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