KR20230114661A - Light emitting diode - Google Patents

Abstract

A light emitting diode that emits light in a red wavelength band is disclosed. The disclosed light emitting diode includes|: a first semiconductor layer having a light emitting surface; a second semiconductor layer; an active layer provided between the first semiconductor layer and the second semiconductor layer; a first contact electrode connected to the first semiconductor layer; a second contact electrode connected to the second semiconductor layer; a first connection pad connected to the first contact electrode; and a second connection pad connected to the second contact electrode. A current concentration area may be located between the first connection pad and the second connection pad. Therefore, the left and right light amounts of the light emitting diode can be substantially symmetrical.

Description

Light Emitting Diode {LIGHT EMITTING DIODE}

The present disclosure relates to a light emitting diode, and relates to a light emitting diode that emits light in a red wavelength band.

A display panel includes a substrate and a plurality of light emitting diodes mounted on the substrate. The plurality of light emitting diodes may be inorganic light emitting diodes that emit light by themselves.

A plurality of light emitting diodes mounted on a substrate express various colors while being operated in units of pixels or sub-pixels. The operation of each pixel or sub-pixel is controlled by a plurality of thin film transistors (TFTs). Each light emitting diode emits different colors, for example red, green and blue.

An object of the present disclosure is to provide a light emitting diode in which left and right light amounts are substantially symmetrical by locating a current concentration region at the center of a light emitting surface.

According to various embodiments of the present disclosure, a first semiconductor layer having a light emitting surface to achieve the above object; a second semiconductor layer; an active layer provided between the first semiconductor layer and the second semiconductor layer; a first contact electrode connected to the first semiconductor layer; a second contact electrode connected to the second semiconductor layer; a first connection pad connected to the first contact electrode; and a second connection pad connected to the second contact electrode, wherein a current concentration region is positioned between the first connection pad and the second connection pad.

The second contact electrode may be positioned between the first connection pad and the second connection pad.

The second contact electrode may be connected to the second connection pad by a conductive connection member.

The second contact electrode may be disposed at a position corresponding to a center of a long side of the light emitting diode.

The second contact electrode may be disposed at a position corresponding to the center of the light emitting surface.

The second contact electrode may be disposed at a position corresponding to the center of the active layer.

The second contact electrode may be made of an opaque conductive material, and the conductive connection member may be made of an opaque conductive material or a transparent electrode material.

The second contact electrode may be located in an area of the conductive connection member.

The first contact electrode may be disposed at a position corresponding to the first connection pad, and the second contact electrode may be disposed at a position not corresponding to the second connection pad.

The second contact electrode may have one end connected to the second connection pad and the other end extending in a direction toward the first connection pad.

The other end of the second contact electrode may be spaced apart from the first connection pad.

The second contact electrode is a light emitting diode made of an opaque conductive material.

The second contact electrode may have a finger shape.

The active layer may emit light in a red wavelength band.

An area of the second contact electrode may be 1.9% to 3.2% of the area of the light emitting surface.

In the light emitting diode according to various embodiments of the present disclosure, the light emitting concentration region is located at the center of the light emitting surface of the light emitting diode, thereby minimizing or improving the arrangement of the light emitting concentration region being biased to the left or right of the light emitting surface of the light emitting diode. . Accordingly, the light emitting diode according to various embodiments of the present disclosure can improve the white balance by minimizing the luminance deviation according to the user's viewing direction by making the left and right light amounts of the light emitting surface of the light emitting diode symmetrical.

1 is a block diagram illustrating a display device according to an exemplary embodiment of the present disclosure.
2 is a plan view illustrating a light emitting diode according to an embodiment of the present disclosure.
FIG. 3 is a cross-sectional view taken along line A-A′ shown in FIG. 2 .
FIG. 4 is an enlarged view showing part B shown in FIG. 3 .
5 is a schematic diagram illustrating an example in which a current concentration region of a light emitting diode according to an embodiment of the present disclosure is located in the center of the light emitting diode.
6 is a cross-sectional view showing a light emitting diode according to another embodiment of the present disclosure.
7 is a plan view illustrating a light emitting diode according to another embodiment of the present disclosure.
FIG. 8 is a cross-sectional view taken along line C-C′ shown in FIG. 7 .

Hereinafter, various embodiments will be described in more detail with reference to the accompanying drawings. The embodiments described in this specification may be modified in various ways. Particular embodiments may be depicted in the drawings and described in detail in the detailed description. However, specific embodiments disclosed in the accompanying drawings are only intended to facilitate understanding of various embodiments. Therefore, the technical idea is not limited by the specific embodiments disclosed in the accompanying drawings, and it should be understood to include all equivalents or substitutes included in the spirit and technical scope of the invention.

In the present disclosure, terms including ordinal numbers such as first and second may be used to describe various elements, but these elements are not limited by the above-mentioned terms. The terminology described above is only used for the purpose of distinguishing one component from another.

In the present disclosure, terms such as “comprise” or “have” are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded. It is understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, but other elements may exist in the middle. It should be. On the other hand, when an element is referred to as “directly connected” or “directly connected” to another element, it should be understood that no other element exists in the middle.

In the present disclosure, the expression 'same' means not only completely matching, but also including a degree of difference considering a processing error range.

In addition, in describing the present disclosure, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present disclosure, the detailed description thereof will be abbreviated or omitted.

In the present disclosure, the display module may include a display panel having an inorganic light emitting diode for displaying an image. Here, the display panel may be a flat panel display panel or a curved display panel. For example, a display panel is equipped with a large number of inorganic light emitting diodes (hereinafter referred to as micro LEDs) of about 100 μm or less, and thus has better contrast, response time, and energy efficiency than LCDs (liquid crystal displays) that require a backlight. to provide.

In the present disclosure, a micro LED mounted on a display panel has higher brightness, luminous efficiency, and longer lifetime than OLED. The micro LED may be a semiconductor chip capable of emitting light by itself when power is supplied. Micro LED has fast response speed, low power, and high luminance. For example, microLEDs are more efficient at converting electricity into photons than LCDs or OLEDs. That is, microLEDs have a higher "brightness per watt" than LCD or OLED displays. Micro LEDs can produce the same brightness with about half the energy compared to LEDs or OLEDs that each exceed about 100 μm in width, length, and height. Micro LED is capable of implementing high resolution, excellent color, contrast and brightness, so it can accurately express a wide range of colors, and can implement a clear screen even outdoors in bright sunlight. In addition, micro LED is resistant to burn-in and generates little heat, guaranteeing a long lifespan without deformation. The micro LED may have a flip chip structure in which an anode electrode and a cathode electrode are formed on the same surface and a light emitting surface is located on the opposite side of the surface on which the anode electrode and the cathode electrode are formed. .

In the present disclosure, the display panel is a synthetic resin series having a glass substrate and a flexible material (eg, polyimide (PI), polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), PC ( polycarbonate) or a ceramic substrate.

In the present disclosure, a thin film transistor (TFT) circuit is formed on the front surface of the substrate, and a power supply circuit for supplying power to the TFT circuit on the rear surface, a data driving driver, a gate driving driver, and each driver A timing controller controlling the driver may be disposed. A number of pixels arranged on the front surface of the substrate can be driven by a TFT circuit.

In the present disclosure, circuits may not be disposed on the back side of the board. In this case, the TFT circuit may be manufactured in the form of a film and attached to the entire surface of a substrate (in this case, the substrate may be a glass substrate).

In this disclosure, the TFT provided on the substrate is not limited to a specific structure or type. For example, the TFTs cited in this disclosure include a-Si TFT (amorphous silicon) TFT, LTPS (low temperature polycrystalline silicon) TFT, LTPO (low temperature polycrystalline oxide) TFT, HOP (hybrid oxide and polycrystalline silicon) TFT, LCP (liquid crystalline polymer) TFT, organic TFT (OTFT), or graphene TFT. Alternatively, only a P-type (or N-type) metal oxide semiconductor field effect transistor (MOSFET) may be applied to the substrate in a Si wafer complementary metal oxide silicon (CMOS) process.

In the present disclosure, the entire surface of the substrate may be divided into an active region and an inactive region. The active region may correspond to a region occupied by the TFT layer on the entire surface of the substrate, and the inactive region may be an area excluding the region occupied by the TFT layer on the entire surface of the substrate.

In the present disclosure, a substrate may include an edge region corresponding to an outer periphery. The edge region of the substrate may be an area other than a region of the substrate where a circuit is formed. Also, the edge region of the substrate may include a portion of the front surface of the substrate adjacent to the side surface of the substrate and a portion of the rear surface of the substrate adjacent to the side surface of the substrate. The substrate may be formed in a quadrangle type. For example, the substrate may be formed in a rectangle or square. The edge region of the substrate may include at least one of the four sides of the substrate.

In this disclosure, the substrate may be a substrate without a TFT layer. In this case, the substrate may include a plurality of micro integrated circuits (ICs) capable of serving as TFTs. In this case, wires electrically connecting a plurality of micro ICs and micro LEDs may be formed on the board.

In the present disclosure, a pixel driving method of the display module may be an active matrix (AM) driving method or a passive matrix (PM) driving method. The display module may form a wiring pattern to which each micro LED is electrically connected according to an AM driving method or a PM driving method.

In the present disclosure, the display module can be installed and applied to electronic products or electric vehicles that require wearable devices, portable devices, handheld devices, and various displays as a single unit, matrix type It can be applied to display devices such as monitors for personal computers (PCs), high-definition TVs, signage (or digital signage), and electronic displays through a plurality of assembling arrangements.

Hereinafter, with reference to the accompanying drawings, embodiments of the present disclosure will be described in detail so that those skilled in the art can easily carry out the present disclosure. The present disclosure may be implemented in many different forms and is not limited to the embodiments described herein. And in order to clearly describe the present disclosure in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Hereinafter, a display device according to various embodiments of the present disclosure will be described with reference to drawings.

1 is a block diagram illustrating a display device according to an exemplary embodiment of the present disclosure.

The display device 1 of the present disclosure may include a plurality of display modules 3 . In this case, the plurality of display modules 3 may be physically connected to implement a large format display (eg LFD, large format display).

Referring to FIG. 1 , a display device 1 according to an embodiment of the present disclosure may include a display module 3 and a processor 5.

The display module 3 according to an embodiment of the present disclosure may display various images. Here, the image is a concept including still images and/or moving images. The display module 3 can display various images such as broadcast content and multimedia content. Also, the display module 3 may display a user interface and icons.

The display module 3 may include a display panel 10 and a display driver integrated circuit (DDI) 7 for controlling the display panel 10 .

The display driver IC 7 may include an interface module 7a, a memory 7b (eg, a buffer memory), an image processing module 7c, or a mapping module 7d. The display driver IC 7 transmits image information including, for example, image data or image control signals corresponding to commands for controlling the image data to other parts of the display device 1 through the interface module 7a. can be received from the component. For example, according to an embodiment, image information may be received from a processor 5 (eg, a main processor (eg, an application processor) or an auxiliary processor (eg, a graphic processing unit) that operates independently of the function of the main processor). can

The display driver IC 7 may communicate with a sensor module (not shown) through an interface module 7a. Also, the display driver IC 7 may store at least a portion of the received image information in the memory 7b, for example, in units of frames. The image processing module 7c may pre-process or post-process (eg, adjust resolution, brightness, or size) at least part of the image data based on at least the characteristics of the image data or the characteristics of the display panel 10 . ) can be performed. The mapping module 7d may generate a voltage value or a current value corresponding to the image data pre-processed or post-processed through the image processing module 7c. According to an embodiment, the generation of the voltage value or the current value depends on, for example, the properties of the pixels of the display panel 10 (eg, the arrangement of pixels (RGB stripe or pentile structure) or the size of each sub-pixel). It can be performed based at least in part. At least some pixels of the display panel 10 are driven based, for example, at least in part on the voltage value or current value, so that visual information (eg text, image, or icon) corresponding to the image data is displayed on the display panel ( 10) can be displayed.

The display driver IC 7 may transmit a driving signal (eg, a driver driving signal, a gate driving signal, etc.) to the display based on image information received from the processor 5 .

The display driver IC 7 may display an image based on the image signal received from the processor 5 . For example, the display driver IC 7 generates a driving signal for a plurality of subpixels based on the image signal received from the processor 5, and displays an image by controlling light emission of the plurality of subpixels based on the driving signal. can do.

The display module 3 may further include a touch circuit (not shown). The touch circuit may include a touch sensor and a touch sensor IC for controlling the touch sensor. The touch sensor IC may control the touch sensor to detect, for example, a touch input or a hovering input to a designated position of the display panel 10 . For example, the touch sensor IC may detect a touch input or a hovering input by measuring a change in a signal (eg, voltage, light amount, resistance, or charge amount) for a designated position of the display panel 10 . The touch sensor IC may provide information (eg, location, area, pressure, or time) on the sensed touch input or hovering input to the processor 5 . According to an embodiment, at least a part of the touch circuit (eg, touch sensor IC) is a display driver IC 7, a part of the display panel 10, or another component disposed outside the display module 3 ( eg as part of a co-processor).

The processor 5 includes a digital signal processor (DSP), a microprocessor, a graphics processing unit (GPU), an artificial intelligence (AI) processor, a neural processing unit (NPU), and a TCON for processing digital image signals. (time controller), but is not limited to, central processing unit (CPU), micro controller unit (MCU), micro processing unit (MPU), controller, application A processor (application processor (AP)), a communication processor (communication processor (CP)), or one or more of an ARM processor may be included or defined in the term. In addition, the processor 5 has a built-in processing algorithm. It may be implemented in the form of a system on chip (SoC), large scale integration (LSI), application specific integrated circuit (ASIC), or field programmable gate array (FPGA).

The processor 5 may control hardware or software components connected to the processor 5 by driving an operating system or an application program, and may perform various data processing and operations. In addition, the processor 5 may load and process commands or data received from at least one of the other components into a volatile memory, and store various data in a non-volatile memory.

The display panel 10 may include a substrate and a plurality of pixels. The substrate may include pixel regions in which a plurality of pixels are arranged. One pixel may be disposed in each pixel area. One pixel may include multiple sub-pixels. For example, the plurality of subpixels may include a first light emitting diode emitting light in a red wavelength band, a second light emitting diode emitting light in a green wavelength band, and a third light emitting diode emitting light in a blue wavelength band. can The first to third light emitting diodes may be, for example, inorganic light emitting elements and may be micro light emitting diodes (LEDs) having a size of about 100 μm or less. In this case, the first to third light emitting diodes may be of a flip chip type in which an anode connection pad and a cathode connection pad are disposed on opposite sides of the light emitting surface.

A plurality of thin film transistors (TFTs) for driving the first to third micro light emitting diodes may be disposed in a portion not occupied by the first to third micro light emitting diodes in one pixel area.

The first to third light emitting diodes may be arranged in a line at regular intervals within one pixel area, but are not limited thereto. For example, the first to third light emitting diodes may be arranged in an L shape or in a pentile RGBG method. The pentile RGBG method is a method of arranging the number of red, green, and blue sub-pixels in a ratio of 1:1:2 (RGBG) by using the characteristic that humans discriminate blue less and green the best. The pen tile RGBG method is effective because it can increase yield, lower unit cost, and realize high resolution on small surfaces.

2 is a plan view showing a light emitting diode according to an embodiment of the present disclosure, FIG. 3 is a cross-sectional view taken along the line A-A′ shown in FIG. 2, and FIG. 4 is an enlarged view showing a portion B shown in FIG. 3 , FIG. 4 is an enlarged view showing part B shown in FIG. 3 .

Referring to FIGS. 2 and 3 , the light emitting diode 100 according to an embodiment of the present disclosure may be a red light emitting diode emitting light in a red wavelength band.

The light emitting diode 100 according to an embodiment of the present disclosure is provided between the first semiconductor layer 111, the second semiconductor layer 113, and the first semiconductor layer 111 and the second semiconductor layer 113. It may include an active layer 115 to be.

The first semiconductor layer 111, the active layer 115, and the second semiconductor layer 113 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (CVD). It can be formed using a method such as PECVD; plasma-enhanced chemical vapor deposition).

The first semiconductor layer 111 may include, for example, a p-type semiconductor layer (anode). The p-type semiconductor layer may be selected from GaAs, GaP, GaAlAs or InGaAlP, for example.

The active layer 115 is a region where electrons and holes are recombinated, and as the electrons and holes recombine, the active layer 115 transitions to a lower energy level and can generate light having a wavelength corresponding thereto.

The active layer 115 may include a semiconductor material, for example, amorphous silicon or polycrystalline silicon. Alternatively, the active layer 115 may contain an organic semiconductor material and may have a single quantum well (SQW) structure or a multi quantum well (MQW) structure.

The second semiconductor layer 113 may include, for example, an n-type semiconductor layer (cathode). The n-type semiconductor layer may be selected from GaAs, GaP, GaAlAs or InGaAlP, for example.

A hole type mesa structure may be applied to the light emitting diode 100 according to an embodiment of the present disclosure. In this case, the first connection pad 151 may be connected to the first semiconductor layer 111 through a hole passing through the second semiconductor layer 113 and the active layer 115 .

In addition, when the hole-type mesa structure is applied to the light emitting diode 100, a portion of the active layer 115 may be exposed to the outside. An exposed portion of the active layer 115 may be protected by the passivation layer 170 .

The passivation layer 170 may prevent the active layer 115 from being exposed to the outside and may protect the outside of the light emitting diode 100 from external environments such as moisture and oxygen.

The passivation layer 170 is formed on one surface of the light emitting diode 100 on which the first connection pad 151 and the second connection pad 153 are disposed (for example, the opposite side to the light emitting surface 112 of the light emitting diode 100). ) and the edge portion of the active layer 115 .

Although not shown in the drawing, the passivation layer 170 may also cover the side surface of the first semiconductor layer 111 .

The first contact electrode 131 is for ohmic contact between the first semiconductor layer 111 and the first connection pad 151, and is an opaque metal (eg, phosphorus Al, Pt, Au, Cu, or Cr). ) can be made.

A part of the first contact electrode 131 may contact the first contact electrode 131 and another part may be disposed on the passivation layer 170 covering the second semiconductor layer 113. there is.

The second contact electrode 133 may be electrically connected to the second connection pad 153 through the conductive connection member 140 . The second contact electrode 133 may be made of an opaque metal (eg, phosphorus Al, Pt, Au, Cu, or Cr).

The area of the second contact electrode 133 may be optimally determined in proportion to the area of the light emitting surface 112 of the light emitting diode 100 (or the area of the active layer 115). In this case, if the area of the second contact electrode 133 is smaller than the optimal area, the operating voltage VF may increase due to a decrease in current injection efficiency, and if the area is larger than the optimal area, the current concentration effect is reduced (sidewall leakage). This may reduce the light efficiency.

For example, when the TFT provided in the display panel 10 of the present disclosure is driven by a pulse width modulation (PWM) driving method and a low current of 150 μA or less, an optimal area range of the second contact electrode 133 emits light. Optimal efficiency characteristics can be secured at 1.9% to 3.2% of the area of the light emitting surface 112 of the diode 100.

The second contact electrode 133 may be disposed at a position spaced apart from the second connection pad 153 . For example, the second contact electrode 133 may be positioned between the first connection pad 151 and the second connection pad 153 .

The light emitting surface 112 of the light emitting diode 100 may be a rectangle having a length L1 and a width W1 as shown in FIG. 2 . In this case, the length L1 may be greater than the width W1.

The second contact electrode 133 may be positioned on the second semiconductor layer 113 substantially corresponding to the center of the light emitting surface 112 of the light emitting diode 100 .

For example, the center of the second contact electrode 133 may be located at a location corresponding to a predetermined length L2 from one side of the light emitting diode 100 . Alternatively, the center of the second contact electrode 133 may be located at a location corresponding to a predetermined length L3 from the other side of the light emitting diode 100 . In this case, L2 and L3 may have substantially the same length.

The length of the second contact electrode 133 from the center to the left side of the second contact electrode 133 may be equal to the length from the center to the right side of the second contact electrode 133 . Alternatively, the left and right portions of the second contact electrode 133 may be formed symmetrically with respect to the center of the second contact electrode 133 .

The second contact electrode 133 disposed at the center of the light emitting diode 100 may be electrically connected to the second connection pad 153 through the conductive connection member 140 . In this case, the second contact electrode 133 may be disposed inside the conductive connecting member 140 so as not to deviate from the conductive connecting member 140 .

The conductive connecting member 140 may be formed in a rectangular shape with a large length ratio between a long side and a short side. For example, the length ratio of the long side to the short side of the conductive connecting member 140 may be about 4:1 to about 6:1, but is not limited thereto.

A length L4 of the conductive connecting member 140 may be greater than a length L5 of the second contact electrode 133 . In this case, when the second contact electrode 133 is formed in a circular shape, the length L5 may be the diameter of the second contact electrode 133 .

An area of the conductive connection member 140 may be smaller than an area of the second connection pad 153 . For example, the length L1 of the light emitting surface 112 of the light emitting diode 100 is about 58 μm, the width W1 of the light emitting surface 112 of the light emitting diode 100 is about 34 μm, and the second contact electrode When the length L5 of 133 is about 7 μm to 9 μm, the length L4 of the conductive connecting member 140 is about 10 to 25 μm and the width W2 of the conductive connecting member 140 is about 9 μm. It may be ㎛ to 11㎛.

The area (L4×W2) of the conductive connecting member 140 is optimal considering the area (L1×W1) of the light emitting surface 112 of the light emitting diode 100 and the length or diameter of the second contact electrode 133. area can be determined.

The outside of the second contact electrode 133 disposed on one side of the conductive connecting member 140 may maintain a gap of about 1 μm from the outside of the conductive connecting member 140 to the inside of the conductive connecting member 140. , but not limited thereto.

Meanwhile, the conductive connecting member 140 need not be limited to a specific length (eg L1), width (eg W2), or shape, and the second contact electrode 133 is the light emitting surface 112 of the light emitting diode 100. ) may have various shapes and areas so as to be located at a location corresponding to the center of .

The conductive connecting member 140 may be made of a material having metal conduction characteristics and low ohmic characteristics of the second semiconductor layer 113 . For example, the conductive connection member 140 may be made of a transparent electrode material (eg, ITO or ZnO) or an opaque electrode material (eg, Al, Pt, Au, Cu, or Cr).

The first connection pad 151 and the second connection pad 153 may be spaced apart from each other on a surface opposite to the light emitting surface 112 of the light emitting diode 100 .

The first connection pad 151 is for electrical connection between the first semiconductor layer 111 and a connection pad (not shown) of the substrate and may be disposed on the second semiconductor layer 113 . In this case, the first connection pad 151 may be electrically connected to the first semiconductor layer 111 through the first contact electrode 131 .

The second connection pad 153 is for electrical connection between the second semiconductor layer 113 and a connection pad (not shown) of the substrate and may be disposed on the second semiconductor layer 113 . In this case, the second connection pad 153 may be physically and electrically connected to the second contact electrode 133 .

The first connection pad 151 and the second connection pad 153 may be made of Au or an alloy containing Au, but are not limited thereto.

The passivation layer 170 may include an inorganic insulating layer (eg, silicon oxide (SiO ₂ )) and/or an organic insulating layer (eg, general purpose polymer (PMMA or PS)). As such, the passivation layer 170 may have a composite stack structure of an inorganic insulating film and an organic insulating film.

Referring to FIG. 4 , the light emitting diode 100 according to an exemplary embodiment of the present disclosure includes uneven portions formed in a curved pattern at equal intervals or unequal intervals on the light emitting surface 112 provided on the first semiconductor layer 111 . (114) may be formed. In the light emitting diode 100 according to an embodiment of the present disclosure, the light emitting area can be maximized by the uneven portion 114 of the light emitting surface 112, and the critical angle of light emission can be increased to improve light emitting efficiency.

In this case, the passivation layer 180 may cover the uneven portion 114 to protect the light emitting surface 112 of the light emitting diode 100 according to an embodiment of the present disclosure.

5 is a schematic diagram illustrating an example in which a current concentration region of a light emitting diode according to an embodiment of the present disclosure is located in the center of the light emitting diode.

Referring to FIG. 5 , in the light emitting diode 100, when a current 132 flows from the first connection pad 151 to the second connection pad 153, light in a red wavelength band may be emitted from the active layer 115.

The second contact electrode 133 is a place where current is concentrated, and a part of the active layer 115 corresponding to the second contact electrode 133 may become a light emitting concentration region.

The emission concentration region in the active layer 115 may correspond to the position of the second contact electrode 133 . Therefore, since the second contact electrode 133 is located at the center of the light emitting surface 112 of the light emitting diode 100, the light emitting concentration region in the active layer 115 is the light emitting surface 112 of the light emitting diode 100. ) may be a position corresponding to the center of

As such, the light emitting concentration region may be located at the center of the light emitting surface 112 of the light emitting diode 100 . Accordingly, since the emission concentration region is not disposed to be biased to the left or right side of the light emitting surface 112 of the light emitting diode 100, the amount of left and right light emitted to the left and right of the light emitting surface 112 of the light emitting diode 100 as shown in FIG. can be substantially symmetrical.

Therefore, the light emitting diode 100 according to an embodiment of the present disclosure can improve left and right full white color deviation when observing the left and right sides of the light emitting surface 112 at the same angle (or similar angle). there is. That is, the white balance is improved by improving the luminance deviation according to the user's viewing direction (eg, the direction in which the user looks at the display device 1 from the front, left, or right side of the display device 1). can do.

6 is a cross-sectional view showing a light emitting diode according to another embodiment of the present disclosure.

Most of the configurations of the light emitting diode 100a according to another embodiment of the present disclosure are substantially the same as those of the above-described light emitting diode 100, but there are differences in some configurations. Therefore, in the following description of the light emitting diode 100a, descriptions of the same configuration as the above-described light emitting diode 100 will be omitted, and description will focus on configurations different from those of the above-described light emitting diode 100.

Referring to FIG. 6 , an edge type mesa structure may be applied to the light emitting diode 100a according to another embodiment of the present disclosure. In this case, the first connection pad 151a may extend along side surfaces of the second semiconductor layer 113a and the active layer 115a. The first connection pad 151a may be electrically connected to the first semiconductor layer 111a through the first contact electrode 131a.

The second contact electrode 133a may be positioned on the second semiconductor layer 113a substantially corresponding to the center of the active layer 115a.

For example, the center of the second contact electrode 133a may be located at a location corresponding to a predetermined length L12 from one side of the active layer 115a. Alternatively, the center of the second contact electrode 133a may be positioned corresponding to a predetermined length L13 from the other side of the active layer 115a. In this case, L12 and L13 may have substantially the same length.

In this case, the center of the active layer 115a may coincide with the center of the light emitting surface 112a of the light emitting diode 100a. Alternatively, the center of the active layer 115a may be shifted from the center of the light emitting surface 112a of the light emitting diode 100a to the left or right by a predetermined interval. As described above, the center of the second contact electrode 133a may be positioned to correspond to the center of the active layer 115a. Accordingly, the center of the second contact electrode 133a may correspond to the center of the light emitting surface 112a of the light emitting diode 100a or may correspond to a point slightly deviated from the center of the light emitting surface 112a to the left or right.

Since the current is concentrated on the second contact electrode 133a, the current concentration region of the light emitting diode 100a may be a point substantially corresponding to the center of the light emitting surface 112a of the light emitting diode 100a. Accordingly, since the emission concentration region is not disposed to be biased toward the left or right side of the light emitting surface 112a of the light emitting diode 100a, the left and right light amounts emitted left and right from the light emitting surface 112a of the light emitting diode 100a are approximately symmetrical. It can be.

Therefore, the light emitting diode 100a according to another embodiment of the present disclosure, like the light emitting diode 100 described above, is also left and right full white when observed at the same angle (or similar angle) on the left and right sides of the light emitting surface 112a ( Since full white color deviation can be improved, the left and right white balance of the display device 1 can be improved.

In FIG. 6, reference numeral 140a denotes a conductive connection member, 151a a first connection pad, 153a a second connection pad, 170a a passivation layer, L11 a length of the light emitting surface 112a, and L14 a length of the conductive connection member 140a. The length L15 indicates the length of the second contact electrode 133a, respectively.

7 is a plan view illustrating a light emitting diode according to another exemplary embodiment of the present disclosure, and FIG. 8 is a cross-sectional view taken along line C-C′ shown in FIG. 7 .

Most of the configurations of the light emitting diode 200 according to another embodiment of the present disclosure are substantially the same as those of the above-described light emitting diode 100, but there are differences in some configurations. Therefore, in the following description of the light emitting diode 200, descriptions of the same configuration as the above-described light emitting diode 100 will be omitted, and description will focus on the configuration different from the above-described light emitting diode 100.

Referring to FIGS. 7 and 8 , the light emitting diode 200 may include a second contact electrode 233 in which the first portion 233a and the second portion 233b are integrally formed.

The second contact electrode 233 may have a substantially finger shape. For example, the first portion 233a of the second contact electrode 233 may be connected to the second connection pad 253 . The second portion 233b of the second contact electrode 233 extends from the first portion 233a along the second connection pad 253 and may be formed outside the second connection pad 253 .

The first portion 233a of the second contact electrode 233 may be located at a point substantially corresponding to the center of the second connection pad 253 .

The tip of the second portion 233b of the second contact electrode 233 corresponds to the center of the light emitting surface 212 of the light emitting diode 200 or is adjacent to the center of the light emitting surface 212 of the light emitting diode 200. can be located

The tip of the second portion 233b of the second contact electrode 233 may be located at a point corresponding to a predetermined length L22 from the left side of the light emitting diode 200 toward the center of the light emitting diode 200 . Alternatively, the tip of the second portion 233b of the second contact electrode 233 may be located at a point corresponding to a predetermined length L23 from the right side of the light emitting diode 200 toward the center of the light emitting diode 200. . L22 and L23 may be substantially the same length.

A width W22 of the second portion 223b of the second contact electrode 233 may be about 1 μm to about 4 μm. When the width W22 of the second portion 223b of the second contact electrode 233 is less than 1 μm, the disconnection defect rate may increase, and when it exceeds 4 μm, the current concentration region is the light emitting surface of the light emitting diode 200 ( 212) may become severe.

Meanwhile, the width W22 of the second portion 223b of the second contact electrode 233 may be limited to an appropriate range in proportion to the size of the light emitting surface 212 of the light emitting diode 200 .

In FIG. 7 , reference numeral L21 denotes the length of the light emitting surface 212 , and W21 indicates the width of the light emitting surface 212 . In FIG. 8, reference numeral 211 denotes a first semiconductor layer, 213 a second semiconductor layer, 215 an active layer, 231 a first contact electrode, 251 a first connection pad, and 270 a passivation layer.

As described above, according to various embodiments of the present disclosure, it is possible to minimize or improve the biased arrangement of the light emitting concentration region to the left or right of the light emitting surface of the light emitting diode by locating the light emitting concentration region at the center of the light emitting surface of the light emitting diode. can Therefore, there is an advantage in that white balance can be improved by minimizing a luminance deviation according to a user's viewing direction by making the right and left light amounts of the light emitting surface of the light emitting diode symmetrical.

Although the preferred embodiments of the present disclosure have been shown and described above, the present disclosure is not limited to the specific embodiments described above, and is commonly used in the technical field belonging to the present disclosure without departing from the gist of the present disclosure claimed in the claims. Of course, various modifications and implementations are possible by those with knowledge of, and these modifications should not be individually understood from the technical spirit or prospect of the present disclosure.

100, 100a, 200: light emitting diode
111, 111a, 211: first semiconductor layer
112, 112a, 212: light emitting surface
113, 113a, 213: second semiconductor layer
115, 115a, 215: active layer
131, 131a, 231: first contact electrode
133, 133a, 233: second contact electrode
140: conductive connection member
151, 151a, 251: first connection pad
153, 153a, 253: second connection pad
170, 170a, 180, 270: passivation layer

Claims (15)

a first semiconductor layer having a light emitting surface;
a second semiconductor layer;
an active layer provided between the first semiconductor layer and the second semiconductor layer;
a first contact electrode connected to the first semiconductor layer;
a second contact electrode connected to the second semiconductor layer;
a first connection pad connected to the first contact electrode; and
A second connection pad connected to the second contact electrode;
A light emitting diode having a current concentration region positioned between the first connection pad and the second connection pad. According to claim 1,
The second contact electrode is positioned between the first connection pad and the second connection pad. According to claim 2,
The second contact electrode is connected to the second connection pad by a conductive connection member. According to claim 3,
The second contact electrode is disposed at a position corresponding to a center of a long side of the light emitting diode. According to claim 3,
The second contact electrode is disposed at a position corresponding to the center of the light emitting surface. According to claim 3,
The second contact electrode is disposed at a position corresponding to the center of the active layer. According to claim 3,
The second contact electrode is an opaque conductive material,
The conductive connection member is a light emitting diode made of an opaque conductive material or a transparent electrode material. According to claim 3,
The second contact electrode is positioned in a region of the conductive connection member. According to claim 1,
the first contact electrode is disposed at a position corresponding to the first connection pad;
The second contact electrode is disposed at a position not corresponding to the second connection pad. According to claim 1,
The second contact electrode has one end connected to the second connection pad and the other end extending in a direction toward the first connection pad. According to claim 10,
The other end of the second contact electrode is spaced apart from the first connection pad. According to claim 10,
The second contact electrode is a light emitting diode made of an opaque conductive material. According to claim 10,
The second contact electrode is formed in a finger shape light emitting diode. According to claim 1,
The active layer is a light emitting diode that emits light in a red wavelength band. According to claim 1,
The area of the second contact electrode is 1.9% to 3.2% of the area of the light emitting surface.

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