KR20230104302A - Optoelectronic device having a double heterojunction structure with improved photodetection efficiency and method for manufacturing the same - Google Patents

Abstract

The present invention relates to an optoelectronic device having a double heterojunction structure with improved photodetection efficiency by overcoming the limitations of 2D materials in which doping concentration and thickness are not easily controlled, and a manufacturing method thereof.
An optoelectronic device according to the present invention includes a substrate; an n-type semiconductor region formed on a portion of an upper surface of the substrate; insulator layers spaced apart from each other on the substrate with respect to the n-type semiconductor region; a 2D material layer formed to fill spaced apart portions of the insulator layer; a TCO layer formed on the insulator layer and the 2D material layer; a first electrode formed on the TCO layer; and a second electrode spaced apart from the first electrode and formed on the TCO layer.

Description

Optoelectronic device having a double heterojunction structure with improved photodetection efficiency and method for manufacturing the same}

The present invention relates to a 2D material-based optoelectronic device, and more particularly, to an optoelectronic device having a double heterojunction structure with improved photodetection efficiency by overcoming the limitations of 2D materials, which are not easy to control doping concentration and thickness, and a method for manufacturing the same It is about.

An optoelectronic device converts an optical signal into an electrical signal, and includes a photodetector such as a photodiode, a phototransistor, and the like. A typical photodetector is formed to include a multi-layered semiconductor thin film in which a doped region is formed on a silicon substrate by an ion implantation method or the like.

Meanwhile, after the discovery of thin graphene with excellent physical properties, many studies on 2D materials have been conducted. Recently, many studies have been conducted on various 2D materials other than graphene, and these are mainly called TMDC as transition metal dichalcogenides.

2D materials are bonded between atomic layers by van der Waals (vdW) forces without chemical bonding, so that various heterostructures can be formed regardless of the lattice of the material.

However, the inherently low optical absorption of 2D materials results in low photoresponsivity in photodetectors based on 2D-2D heterostructures, especially in the infrared range where long penetration depths are preferred.

Therefore, in order to improve the low photodetection characteristics, an alternative strategy of stacking a conventional 3D semiconductor and a 2D material is being adopted. difficulties in using it.

KR 10-2143778 B1

The present invention has been made to solve the above problems, and an optoelectronic device having a double heterojunction structure with improved photodetection efficiency and a manufacturing method thereof to overcome the limitations of 2D materials in which doping concentration and thickness control are not easy. Its purpose is to provide

Other objects and advantages of the present invention will be described below, and will be learned by way of examples of the present invention. Furthermore, the objects and advantages of the present invention may be realized by means of the instrumentalities and combinations indicated in the claims.

In order to achieve the above object, an optoelectronic device having a double heterojunction structure with improved photodetection efficiency according to the present invention includes a substrate; an n-type semiconductor region formed on a portion of an upper surface of the substrate; insulator layers spaced apart from each other on the substrate with respect to the n-type semiconductor region; a 2D material layer formed to fill spaced apart portions of the insulator layer; a TCO layer formed on the insulator layer and the 2D material layer; a first electrode formed on the TCO layer; and a second electrode spaced apart from the first electrode and formed on the TCO layer.

A method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency according to the present invention includes preparing a substrate; forming an n-type semiconductor region on a portion of an upper surface of the substrate; forming insulator layers spaced apart from each other on the substrate based on the n-type semiconductor region; forming a 2D material layer to fill the spaced apart portions of the insulator layer; forming a TCO layer on the insulator layer and the 2D material layer; Forming a first electrode on the TCO layer; and forming a second electrode on the TCO layer to be spaced apart from the first electrode.

The 2D material layer may have a p-type conductivity.

The 2D material layer may have a length determined by the n-type semiconductor region.

The 2D material layer may be a transition metal chalcogen compound (TMDC) layer.

The TMDC layer may be at least one of WSe ₂ , MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , SnSe ₂ , and SnS ₂ .

The 2D material layer may be transferred to spaced apart portions of the insulator layer using a polydimethylsiloxane (PDMS) template.

The TCO layer may have an n-type conductivity.

The TCO layer may be at least one of Ga ₂ O ₃ , SnO ₂ , In ₂ O ₃ :Sn, ZnO:Al, AZO, CTO, and Cd ₂ SnO ₄ .

A metal layer may be formed on the insulator layer to increase contact with the TCO layer.

For light with a wavelength of 1550 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+15 cm ^-3 to 6.0E+15 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 700 nm to 940 nm. can be in the nanometer range.

For light with a wavelength of 638 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+17 cm ^-3 to 6.0E+17 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 97 nm to 130 can be in the nanometer range.

The 2D material layer may have a thickness of 39 nm to 49 nm, and the TCO layer may have a thickness of 195 nm to 205 nm.

The substrate may be a substrate including at least one of a group IV semiconductor material and a group III-V compound semiconductor material.

The substrate may be a p-type Ge substrate.

As described above, according to the present invention, by providing a TCO layer and a predetermined doping region on the top and bottom of the 2D material layer to have a double heterojunction structure, the doping concentration and thickness of the 2D material that is not easy to control There is an effect that can overcome the limitations.

Accordingly, it is possible to provide an optoelectronic device having a double heterojunction structure with improved photodetection efficiency.

1 is a cross-sectional view showing an optoelectronic device according to an embodiment of the present invention;
2 is a graph showing a doping profile at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention;
3 is a graph showing a doping profile at a wavelength of 638 nm of an optoelectronic device according to an embodiment of the present invention;
4 is a graph showing the relationship between current and voltage at a wavelength of 520 nm of an optoelectronic device according to an embodiment of the present invention;
5 is a graph showing the relationship between current and voltage at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention;
6 is a graph showing the photoreaction rate at a wavelength of 520 nm of an optoelectronic device according to an embodiment of the present invention;
7 is a graph showing the photoreaction rate at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention;
8 is a graph showing light responsivity as a function of wavelength of an optoelectronic device according to an embodiment of the present invention;
9 is a graph showing light response time as a function of wavelength of an optoelectronic device according to an embodiment of the present invention.

Since the present invention can have various changes and various forms, specific embodiments will be illustrated in the drawings and described in detail in the text.

However, it should be understood that this is not intended to limit the present invention to the specific disclosed form, and includes all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numerals have been used for like elements throughout the description of each figure. In the accompanying drawings, the dimensions of the structures are shown enlarged than actual for clarity of the present invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present invention.

Terms used in this application are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, terms such as "comprise" or "have" are intended to designate that there is a feature, step, operation, component, part, or combination thereof described in the specification, but one or more other features or steps However, it should be understood that it does not preclude the possibility of existence or addition of operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the present application, they should not be interpreted in an ideal or excessively formal meaning. don't

Hereinafter, the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view showing an optoelectronic device according to an embodiment of the present invention, FIG. 2 is a graph showing a doping profile at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention, and FIG. A graph showing a doping profile at a wavelength of 638 nm of an optoelectronic device according to an embodiment, and FIG. 4 is a graph showing a current-voltage relationship at a wavelength of 520 nm of an optoelectronic device according to an embodiment of the present invention. 5 is a graph showing the current-voltage relationship at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention, and FIG. 6 is a photoreaction rate at a wavelength of 520 nm of an optoelectronic device according to an embodiment of the present invention. 7 is a graph showing the photoreaction rate at a wavelength of 1550 nm of an optoelectronic device according to an embodiment of the present invention, and FIG. 8 is a graph showing light as a function of wavelength of an optoelectronic device according to an embodiment of the present invention. It is a graph showing responsivity, and FIG. 9 is a graph showing light response time as a function of wavelength of an optoelectronic device according to an embodiment of the present invention.

Referring to FIG. 1 , an optoelectronic device according to an embodiment of the present invention includes a substrate 10, an n-type semiconductor region 20 formed on a portion of an upper surface of the substrate 10, and the n-type semiconductor. The insulator layer 30 formed to be spaced apart from each other on the substrate 10 based on the region 20, the metal layer 40 on the insulator layer 30, the insulator layer 30 and the metal layer 40 A 2D material layer 50 formed to fill the spaced apart part of, a TCO layer 60 formed on the metal layer 40 and the 2D material layer 50, and a first formed on the TCO layer 60 It is characterized in that it includes an electrode 70 and a second electrode 71 formed on the TCO layer 60 and spaced apart from the first electrode 70 . Hereinafter, each structure will be described in detail.

The substrate 10 reacts to light in a predetermined wavelength range, in detail, absorbs light in a predetermined wavelength range to generate photocurrent, and various substrates may be used.

For example, the substrate 10 may be a substrate including a group IV semiconductor material such as Ge or Si, a III-V compound semiconductor material such as InGaAs, GaAs, GaN, or InP.

The substrate 110 may have, for example, a p-type conductivity, but may not have a conductivity type if necessary.

Preferably, the substrate 10 may be a p-type Ge substrate.

The n-type semiconductor region 20 may be formed by introducing an n-type dopant element into a portion of the substrate 10 . For example, the n-type semiconductor region 20 may be formed using As as an ion implantation dopant, and the doping region may be expanded through heat treatment.

The insulator layer 30 may be formed of aluminum oxide (Al ₂ O ₃ ).

A metal layer 40 may be formed on the insulator layer 30 to increase contact with the TCO layer 60 . Here, the metal layer 40 is formed of an aluminum (Al) metal layer, and the aluminum metal layer may be formed of pure aluminum.

An n-type semiconductor region 20 formed on a portion of an upper surface of the substrate 10 may be exposed through patterning of the insulator layer 30 and the metal layer 40 .

A 2D material layer 50 is formed at a spaced apart portion of the insulator layer 30 and the metal layer 40 .

Preferably, after the 2D material layer 50 is mechanically exfoliated from the bulk crystal, the insulator layer 30 and the metal layer 40 are spaced apart using a polydimethylsiloxane (PDMS) template. Can be transferred to parts.

Specifically, WSe ₂ flakes exfoliated from the bulk crystal can be transferred to the corresponding spaced parts using a PDMS template via optical alignment at an elevated step temperature of 80 °C to form a pn junction.

In addition, of course, the 2D material layer 50 can be formed by various deposition methods such as chemical vapor deposition.

The 2D material layer 50 itself may have a p-type conductivity.

Preferably, the 2D material layer 50 may have a length determined by the n-type semiconductor region 20 .

In 2D materials, atomic layers are bonded between atomic layers by van der Waals (vdW) forces without chemical bonding, so that various heterojunctions can be formed regardless of the lattice of the material.

For example, a heterojunction structure is formed between the n-type semiconductor region 20 and the 2D material layer 50 or between the 2D material layer 50 and the TCO layer 60 due to van der Waals force. can be formed

In other words, in the present invention, a double p-n heterojunction can be created between the n-type semiconductor region 20, the 2D material layer 50 and the TCO layer 60, and thus the photoreactivity can be increased several times.

The 2D material layer 50 may be a transition metal chalcogen compound (TMDC) layer.

TMDCs are so-called van der Waals materials and have the chemical formula MX ₂ , where M is a transition metal (Mo or W) and X is a chalcogen (S, Se, Te).

The TMDC layer is tungsten diselenide (WSe ₂ ), Molybdenum sulfide (MoS ₂ ), Molybdenum selenide (MoSe ₂ ), molybdenum ditelluride (MoTe ₂ ), tungsten disulfide (WS ₂ ), Tin diselenide (SnSe ₂ ), Tin disulfide (SnS ₂ ) may be at least one of them.

The TMDC layer effectively absorbs and emits light, and thus may be ideal for making various optoelectronic devices such as photodiodes and solar cells.

Preferably, the 2D material layer 50 may be formed of WSe ₂ .

The TCO (Transparent Conducting Oxide) layer 60 may be any transparent conductive material, and as a specific example, Gallium oxide (Ga2O ₃ ), Tin oxid (SnO ₂ ), Indium tin oxide (In ₂ O ₃ :Sn), Alumium It may be at least one of zinc oxide (ZnO:Al), aluminum-doped zinc oxide (AZO), cadmium tin oxide (CTO), and cadmium stannte (Cd ₂ SnO ₄ ).

The TCO layer 60 may have, for example, n-type conductivity.

Since the TCO layer 60 is a semiconductor material and has high electrical characteristics and is transparent, it has an advantage of having high light transmittance.

Preferably, the TCO layer 60 may be formed of Ga ₂ O ₃ . The Ga ₂ O ₃ has excellent physical properties of a particularly wide band gap.

The first and second electrodes 70 and 71 may be deposited through an E-beam evaporation process and patterned using a conventional photolithography and lift-off process.

The insulator layer 30 may have a thickness of 15 nm to 25 nm, preferably 20 nm, and the metal layer 40 may have a thickness of 5 nm to 15 nm, preferably 10 nm.

The 2D material layer 50 may have a thickness of 39 nm to 49 nm, preferably 44 nm, and the TCO layer 60 may have a thickness of 195 nm to 205 nm, preferably 200 nm. .

The first and second electrodes 70 and 71 may be formed of a Cr/Au layer, wherein the Cr layer may have a thickness of 15 nm to 25 nm, preferably 20 nm, and the Au layer may have a thickness of 75 nm to 25 nm. It may have a thickness of 85 nm, preferably 80 nm.

On the other hand, in the case of the 2D material layer 50, it is difficult to control the doping concentration and thickness.

In this regard, the present invention additionally provides an n-type semiconductor region 20, and by controlling the doping concentration and thickness of the n-type semiconductor region 20, the limits of doping concentration and thickness control of the 2D material are overcome. are solving

That is, in the present invention, in the p-n junction, particularly in the p-n junction between the n-type semiconductor region 20 and the 2D material layer 50, the doping concentration and thickness of the n-type semiconductor region 20 are controlled. In this way, the photodetection performance of optoelectronic devices is increased. In this case, the 2D material layer 50 has a conductivity type different from that of the n-type semiconductor region 20, and preferably may itself have a p-type conductivity.

In the present invention, TCAD (Technology Computer-Aided Design) simulation is performed to accurately control the doping concentration and thickness of the n-type semiconductor region 20 .

2 and 3 show the TCAD simulation results, specifically, FIG. 2 shows a doping profile at a wavelength of 1550 nm, and FIG. 3 is a graph showing a doping profile at a wavelength of 638 nm.

The variables of the ion implantation process for controlling the doping concentration include a total of four variables: dose, energy, heat treatment temperature, and heat treatment time.

In the present invention, it was possible to find ion implantation process conditions capable of forming an optimized doping concentration and thickness of the n-type semiconductor region 20 among hundreds of combinations by adjusting these four variables. [Table 1] shows the width (width) of the depletion region in the vertical direction between the n-type semiconductor region 20 and the 2D material layer 50 according to the doping concentration of the n-type semiconductor region 20. are giving Since the Ge substrate can absorb light in the wavelength range of 638 nm and 1500 nm by about 100 nm and 1000 nm, the doping concentration and thickness of the n-type semiconductor region 20 corresponding to the thickness can be found in [Table 1]. could

Doping concentration of n-type semiconductor region [cm ^-3 ] Thickness of n-type semiconductor region [nm] 4.0E+17 96.9 3.0E+17 110.0 2.0E+17 132.8 1.0E+17 186.4 9.0E+16 196.4 8.0E+16 208.3 7.0E+16 222.7 6.0E+16 240.5 5.0E+16 263.5 4.0E+16 294.7 3.0E+16 340.5 2.0E+16 417.3 1.0E+16 590.7 9.0E+15 622.7 8.0E+15 660.5 7.0E+15 706.2 6.0E+15 762.2 5.0E+15 835.7 4.0E+15 934.5

Preferably, for light with a wavelength of 1550 nm, the doping concentration of the n-type semiconductor region 20 may be in the range of 4.0E+15 cm ^-3 to 6.0E+15 cm ^-3 , and the n-type semiconductor The thickness of region 20 may range from 760 nm to 940 nm.

Preferably, for light with a wavelength of 638 nm, the doping concentration of the n-type semiconductor region 20 may be in the range of 2.0E+17 cm ^-3 to 4.0E+17 cm ^-3 , and the n-type semiconductor The thickness of region 20 may range from 96 nm to 130 nm.

1000 nm)가 될 수 있다.Referring to Table 1 and FIG. 2 , it can be seen that the doping concentration of the n-type semiconductor region 20 is 4.0E+15 cm ⁻³ for light having a wavelength of 1550 nm (infrared ray). At this time, the thickness of the n-type semiconductor region 20 is 934.5 nm (

1000 nm).

100 nm)가 될 수 있다.Referring to Table 1 and FIG. 3 , it can be seen that the doping concentration of the n-type semiconductor region 20 is 4.0E+17 cm ^-3 for light with a wavelength of 638 nm (visible light). At this time, the thickness of the n-type semiconductor region 20 is 96.9 nm (

100 nm).

In other words, in the present invention, since light with wavelengths of 1550 nm and 638 nm can penetrate up to about 1000 nm and 100 nm into the n-type semiconductor region 20, respectively, the n-type semiconductor region 20 When formed to 1000 nm or 100 nm, the optoelectronic device can absorb light with the highest efficiency, and thus the photoreactivity can be increased by several times.

4 and 5, the I-V characteristics at each wavelength during dark and illumination are shown, and the optoelectronic device according to the present invention has a high level of photocurrent, especially at visible light (520 nm) and infrared light (1550 nm) wavelengths. flow, and it can be seen that the drive is well performed according to the change in optical power.

Referring to FIGS. 6 and 7 , it can be seen that the response time according to on/off at visible light (520 nm) and infrared (1550 nm) wavelengths appears at a very high speed of several microns.

Referring to FIG. 8, in the present invention, when the pn junction is formed only with the 2D material layer (WSe ₂ ) (the WSe ₂ /Ge graph below), the photoreactivity is low, whereas the TCO layer (Ga ₂ O ₃ ) and the 2D material It can be seen that the light reactivity is very high in the case where the pn junction is formed with the layer (WSe ₂ ) (Ga ₂ O ₃ /WSe ₂ /Ge graph at the top). In the case of the latter, it can be seen that the photoreactivity increased by about 7 to 10 times by including the Ga ₂ O ₃ layer.

Referring to FIG. 9 , it can be seen that the reaction speed can be equally fast in other wide wavelength bands as well as visible light (520 nm) and infrared (1550 nm) wavelengths according to FIGS. 6 and 7 .

Those skilled in the art to which the present invention pertains will understand that the present invention can be embodied in other specific forms without changing its technical spirit or essential features. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the claims to be described later rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts thereof are included in the scope of the present invention. should be interpreted

10: Substrate
20: n-type semiconductor region
30: insulator layer
40: metal layer
50: 2D material layer
60: TCO layer
70: first electrode
71: second electrode
.

Claims (28)

Board;
an n-type semiconductor region formed on a portion of an upper surface of the substrate;
insulator layers spaced apart from each other on the substrate with respect to the n-type semiconductor region;
a 2D material layer formed to fill spaced apart portions of the insulator layer;
a TCO layer formed on the insulator layer and the 2D material layer;
a first electrode formed on the TCO layer; and
An optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it comprises a second electrode formed on the TCO layer spaced apart from the first electrode. According to claim 1,
The optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the 2D material layer has a p-type conductivity. According to claim 1,
The optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the 2D material layer has a length determined by the n-type semiconductor region. According to claim 1,
The 2D material layer is an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the transition metal chalcogenide compound (TMDC) layer. According to claim 4,
The TMDC layer is WSe ₂ , MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , SnSe _{2 ,} At least one of SnS ₂ Optoelectronic device having a double heterojunction structure with improved photodetection efficiency. According to claim 1,
The 2D material layer is an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that transferred to spaced apart portions of the insulator layer using a polydimethylsiloxane (PDMS) template. According to claim 1,
The optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the TCO layer has an n-type conductivity. According to claim 1,
The TCO layer is Ga ₂ O ₃ , SnO ₂ , In ₂ O ₃ :Sn, ZnO:Al, AZO, CTO, Cd ₂ SnO ₄ A double heterojunction structure with improved photodetection efficiency, characterized in that at least one of optoelectronic device. According to claim 1,
An optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that a metal layer is formed on the insulator layer to increase contact with the TCO layer. According to claim 1,
For light with a wavelength of 1550 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+15 cm ^-3 to 6.0E+15 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 700 nm to 940 nm. An optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it is in the nm range. According to claim 1,
For light with a wavelength of 638 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+17 cm ^-3 to 6.0E+17 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 97 nm to 130 An optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it is in the nm range. According to claim 1,
The 2D material layer has a thickness of 39 nm to 49 nm,
The TCO layer is an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it has a thickness of 195 nm to 205 nm. According to claim 1,
The optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the substrate is a substrate containing at least one of a group IV semiconductor material and a group III-V compound semiconductor material. According to claim 12,
The optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the substrate is a p-type Ge substrate. Preparing a substrate;
forming an n-type semiconductor region on a portion of an upper surface of the substrate;
forming insulator layers spaced apart from each other on the substrate based on the n-type semiconductor region;
forming a 2D material layer to fill the spaced apart portions of the insulator layer;
forming a TCO layer on the insulator layer and the 2D material layer;
Forming a first electrode on the TCO layer; and
A method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, comprising forming a second electrode on the TCO layer to be spaced apart from the first electrode. According to claim 15,
The method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the 2D material layer has a p-type conductivity. According to claim 15,
The method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the 2D material layer has a length determined by the n-type semiconductor region. According to claim 15,
The 2D material layer is a method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the transition metal chalcogenide compound (TMDC) layer. According to claim 18,
The TMDC layer has a double heterojunction structure with improved photodetection efficiency, characterized in that at least one of WSe ₂ , MoS ₂ , MoSe ₂ , MoTe ₂ , WS ₂ , SnSe ₂ , SnS ₂ Manufacturing method of an optoelectronic device. According to claim 15,
The 2D material layer is a method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that transferred to the spaced apart portion of the insulator layer using a polydimethylsiloxane (PDMS) template. According to claim 15,
The method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the TCO layer has an n-type conductivity. According to claim 15,
The TCO layer is Ga ₂ O ₃ , SnO ₂ , In ₂ O ₃ :Sn, ZnO:Al, AZO, CTO, Cd ₂ SnO ₄ A double heterojunction structure with improved photodetection efficiency, characterized in that at least one of A method for manufacturing an optoelectronic device having According to claim 15,
A method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that a metal layer is formed on the insulator layer to increase contact with the TCO layer. According to claim 15,
For light with a wavelength of 1550 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+15 cm ^-3 to 6.0E+15 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 700 nm to 940 nm. A method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it is in the nm range. According to claim 15,
For light with a wavelength of 638 nm, the doping concentration of the n-type semiconductor region ranges from 4.0E+17 cm ^-3 to 6.0E+17 cm ^-3 , and the thickness of the n-type semiconductor region ranges from 97 nm to 130 A method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it is in the nm range. According to claim 15,
The 2D material layer has a thickness of 39 nm to 49 nm,
The TCO layer is a method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that it has a thickness of 195 nm to 205 nm. According to claim 15,
The method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the substrate is a substrate containing at least one of a group IV semiconductor material and a group III-V compound semiconductor material. The method of claim 27,
The method of manufacturing an optoelectronic device having a double heterojunction structure with improved photodetection efficiency, characterized in that the substrate is a p-type Ge substrate.

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