KR20230000099A - Method of manufacturing silicon particles - Google Patents

Abstract

The purpose of this invention is to provide a method for producing silicon particles for efficient surface mounting. The method for producing silicon particles according to one embodiment of the present invention comprises: a conductive paste attachment step of applying conductive paste to a carrier substrate; a silicon particle placing step of placing silicon particles having a central part and a surface part wrapping the central part into holes of the carrier substrate; a curing step of fixing the conductive paste attached to the silicon particles; an underpart removal step of removing protruding underparts of the silicon particles to expose the central parts of the silicon particles; a first electrode formation step of forming a first electrode electrically connected to the exposed central parts of the silicon particles; a second electrode formation step of forming a second electrode electrically connected to the remaining conductive paste; and a silicon particle separation step of separating the carrier substrate and the silicon particles.

Description

Method of manufacturing silicon particles { Method of manufacturing silicon particles }

The present invention relates to a method for manufacturing silicon particles for efficient surface mounting.

A solar cell using silicon particles in the existing panel-type solar cell is being developed. However, optimization has not yet been achieved in the fabrication process and separation process.

Since the efficiency of surface mounting varies greatly depending on which process is used for surface mounting, various separation methods need to be studied.

Accordingly, a technology for mass-producing silicon particles and a technology for efficiently separating the produced silicon particles for surface mounting are being researched.

The present invention has been made to solve the above conventional problems, and an object of the present invention is to provide a method for manufacturing silicon particles for efficient surface mounting.

A silicon particle manufacturing method according to an embodiment of the present invention includes a conductor paste attaching step of attaching a conductor paste to the lower end of a carrier substrate, a silicon particle mounting step of seating silicon particles having a center portion and a surface portion surrounding the center portion in a hole of a carrier substrate. , Curing step of fixing the conductive paste attached to the silicon particle, removing the lower part of the protruding silicon particle to expose the center of the silicon particle, first electrode electrically connected to the center of the exposed silicon particle It includes a first electrode forming step of forming, and a silicon particle separation step of separating the carrier substrate and the silicon particle.

In one embodiment, a second electrode forming step of forming a second electrode electrically connected to the remaining conductive paste may be further included.

In one embodiment, after the step of forming the second electrode, a fixing end forming step of forming a fixing end for fixing the silicon particles on the carrier substrate may be further included.

In one embodiment, the curing step may include a conductor paste fixing step of fixing the conductor paste by applying heat.

In one embodiment, the separating the silicon particles may include attaching an elastic pad to the bottom of the carrier substrate and separating the silicon particles by applying pressure to the elastic pad.

In one embodiment, the step of separating the silicon particles may include attaching a layer having bumps corresponding to a plurality of holes to a lower portion of the carrier substrate, and applying force to the layer having the bumps to separate the silicon particles. A pressure separation step may be included.

In an embodiment, before the bump layer attaching step, an attaching step of attaching the sticking means to the bottom of the carrier substrate may be further included.

In one embodiment, the conductive paste may be characterized by having Ag as a component.

In one embodiment, the first electrode may be characterized in that any one of Al, Ni, Ti, Ag and Cu as a material.

In one embodiment, the silicon particle includes a surface portion formed outside the silicon particle, and a central portion surrounded by the surface portion, and the second electrode forming step is formed by removing the conductive paste from the surface portion of the silicon particle. It may include a step of being connected to a second electrode and insulated from the first electrode.

In one embodiment, the firing step may include an ohmic contact forming step of forming an electron transfer path between the silicon particle and the first and second electrodes by bonding the silicon particle and the electron transfer material to form an ohmic contact; It may be characterized by including.

In one embodiment, the electron transfer material may be at least one of Al, Ti, Ag, Au, Pt, and Ta.

In one embodiment, the step of separating the silicon particles may include a step of preventing separation of the silicon particles by attaching an adhesive means to a lower end of the carrier substrate to prevent the separation of the silicon particles.

In one embodiment, the adhesive force of the adhesive may be 2 to 100 gf/inch.

In one embodiment, the step of separating silicon particles may include a block unit separating step of separating a plurality of silicon particles into block units having a predetermined size.

In one embodiment, the carrier substrate may be characterized in that it includes a mounting jig in which a plurality of holes are formed.

In one embodiment, the lower removal step may include a lower surface polishing step of polishing the lower surface of the protruding silicon particles and the cured conductive paste.

In one embodiment, after the step of forming the second electrode, an electrode firing step of firing the first electrode and the second electrode formed of silicon particles may be further included.

In one embodiment, the silicon particle is characterized in that it is a solar cell that absorbs sunlight to generate electricity, and the central and surface portions are formed of a semiconductor material having electrodes of different polarities, respectively. .

Therefore, according to the present invention,

First, there is an advantage in mass-producing silicon particle devices for surface mounting having solar cell functions.

Second, there is also an advantage in that the silicon particle solar cell manufactured by forming a fixed end on top of the carrier substrate can be manufactured and mounted in large quantities or in a predetermined block.

Third, there is an advantage of easily separating the manufactured solar cell by attaching and separating an elastic pad under the carrier substrate.

Fourth, by forming an adhesive means under the carrier substrate, there is an advantage in that the fabricated solar cell is easily separated from the carrier substrate.

1 is a particle manufacturing flow chart showing a sequence of a silicon particle manufacturing method according to an embodiment of the present invention.
FIG. 2A is a silicon particle seating diagram illustrating a state in which the step of attaching the conductor paste in FIG. 1 is completed.
Figure 2b is a view showing that the silicon particles shown in Figure 1 are seated.
FIG. 2C is a view showing an additional mounting jig in the embodiment of FIG. 1 .
FIG. 2D is a lower removal view of the carrier substrate showing a state in which the lower portion of the carrier substrate is polished and removed by the lower removal step shown in FIG. 1 .
3 is an electrode firing flowchart showing a firing sequence of the first or second electrode.
4 is an electrode firing state diagram showing how the first electrode is fired by the electrode firing step of FIG. 3 .
5 is a flow chart of separating silicon particles by an elastic pad showing a sequence of separating silicon particles manufactured using an elastic pad.
FIG. 6 is an elastic pad attachment diagram showing that an elastic pad is attached to a lower end of a carrier substrate in the process of separating silicon particles by the elastic pad of FIG. 5 .
FIG. 7 is a flow chart for separating silicon particles by attaching an adhesive means, showing a sequence of assisting separation of silicon particles by attaching an adhesive means.
8 is a flow chart of silicon particle separation by a bump layer showing a sequence of separating silicon particles by attaching a bump layer.
9 is a flow chart for separating silicon particles by a fixed end showing a procedure for assisting separation of silicon particles by adding a fixed end on a carrier substrate.
FIG. 10 is a fixed end formation diagram showing a state in which a fixed end is formed on an upper portion of a carrier substrate in the fixed end forming step of FIG. 9 .

Hereinafter, with reference to the accompanying drawings, a preferred embodiment will be described with reference to the accompanying drawings. In this process, the thickness of lines or the size of components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, terms to be described later are terms defined in consideration of functions in the present invention, which may vary according to the intention or custom of a user or operator. Therefore, definitions of these terms will have to be made based on the content throughout this specification.

In addition, the following examples do not limit the scope of the present invention, but are presented as examples only, and there may be various embodiments implemented through the technical idea.

Method for fabricating silicon particles for surface mounting (SMT)

Referring to FIG. 1, the method of manufacturing a silicon particle 1 according to an embodiment of the present invention includes a conductive paste attaching step of applying a conductive paste 20 to a carrier substrate 10 (S100); A silicon particle mounting step (S200) of seating the silicon particle 1 having a central portion 40 and a surface portion 50 surrounding the central portion 40 in a hole of the carrier substrate 10; A curing step of fixing the conductive paste 20 attached to the silicon particles 1 (S300); A lower removal step (S400) of removing the lower portion of the protruding silicon particle 1 to expose the central portion 40 of the silicon particle 1; A first electrode 80 forming step (S500) of forming a first electrode 80 electrically connected to the central portion 40 of the exposed silicon particle 1; and a silicon particle separation step (S700) of separating the carrier substrate 10 and the silicon particle 1.

Here, after the first electrode 80 forming step, a second electrode 90 forming step (S600) of forming the second electrode 90 remaining and electrically connected to the cured conductive paste 70 is added. can The second electrode 90 may be formed separately, or may be used as the second electrode when the remaining conductive paste 70 is cured.

The curing step (S300) includes a conductor paste 20 fixing step of fixing the conductor paste 20 by applying heat.

The silicon particle separation step (S700) includes an elastic pad 100 attaching step of attaching the elastic pad 100 to the bottom of the carrier substrate 10 (S710); and an elastic pressure separation step (S720) of separating the silicon particles 1 by applying pressure to the elastic pad 100.

The silicon particle separation step (S700) includes a bump layer attaching step (S730) of attaching a layer having bumps corresponding to a plurality of holes to the bottom of the carrier substrate 10; and a bump layer pressing and separating step (S740) of separating the silicon particles 1 by applying force to the layer on which the bumps are formed.

Prior to the bump layer attaching step (S730), an adhesive means attaching step (S650) of attaching an adhesive means to the bottom of the carrier substrate 10 is further included.

The silicon particle 1 is a solar cell that generates electricity by absorbing sunlight. In the silicon particle 1, the central portion 40 and the surface portion 50 are formed of a semiconductor material having electrodes of different polarities. The silicon particle 1 includes a surface portion 50 formed on the outside of the silicon particle 1; and a central portion 40 surrounded by the surface portion 50.

In the step of forming the second electrode 90 (S600), the surface portion 50 of the silicon particle 1 is connected to the second electrode 90 formed by removing the conductive paste 20, and the first electrode ( 80) and insulated. As already mentioned, the step of forming the second electrode may be omitted.

The silicon particle separation step (S700) includes a step of preventing separation of the silicon particles 1 by attaching an adhesive means to the bottom of the carrier substrate 10 to prevent separation of the silicon particles 1.

The silicon particle 1 separating step (S700) includes a block unit separating step of separating the plurality of silicon particles 1 into block units having a predetermined size.

The carrier substrate 10 includes a mounting jig 60 in which a plurality of holes are formed.

The lower part removal step (S400) includes a lower surface polishing step of polishing the lower surface of the protruding silicon particle 1 and the cured conductive paste 70.

After the second electrode 90 forming step (S600), an electrode firing step (S630) of firing the first electrode 80 and the second electrode 90 formed on the silicon particle 1; may be included.

After the second electrode 90 forming step, a fixed end forming step (S770) of forming a fixed end for fixing the silicon particle 1 on the carrier substrate 10;

Hereinafter, a method of manufacturing the silicon particle 1 will be described in more detail step by step.

STEP 1. Attaching the conductor paste film (S100)

1 is a particle manufacturing flow chart showing a sequence of a silicon particle manufacturing method according to an embodiment of the present invention. FIG. 2A is a silicon particle seating diagram illustrating a state in which the step of attaching the conductor paste in FIG. 1 is completed. Figure 2b is a view showing that the silicon particles shown in Figure 1 are seated. FIG. 2C is a view showing an additional mounting jig in the embodiment of FIG. 1 . FIG. 2D is a lower removal view of the carrier substrate showing a state in which the lower portion of the carrier substrate is polished and removed by the lower removal step shown in FIG. 1 .

Referring to FIGS. 1 and 2A , a carrier substrate 10 including a plurality of holes is provided. Here, a separate mounting jig 60 may be formed for stable mounting of the silicon particles. Seating jig 60 is posted in the drawings to be described later. A conductive paste 20 is applied to the carrier substrate 10 on which a plurality of holes are formed (S100). The conductive paste 20 may contain silver (Ag) as a component. As long as the paste 20 can be applied to the hole of the carrier substrate 10, various methods such as using a separate film or an application mask can be used. The carrier substrate 10 may be made of stainless steel (SUS).

STEP 2. Settlement of silicon particles (S200)

Figure 2b is a view showing that the silicon particles shown in Figure 1 are seated. FIG. 2C is a view showing an additional mounting jig in the embodiment of FIG. 1 .

Referring to Figures 2b and 2c, and the silicon particles (1) having a central portion 40 and a surface portion 50 surrounding the central portion 40 is seated in the hole of the carrier substrate (10) (S200). The silicon particle 1 includes P-type or N-type silicon. The surface portion 50 of the silicon particle 1 may include an antireflection layer and a passivation layer. In addition, the surface portion 50 of the silicon particle 1 is manufactured to surround the center portion 40 of the silicon particle 1 .

Referring to FIG. 2C , the carrier substrate 10 of the silicon particles 1 may include a mounting jig 60 having a plurality of holes. The seating jig 60 assists the silicon particles 1 to be seated in the formed hole.

Ag paste is applied to a portion where the silicon particles 1 are seated on the bottom of the carrier substrate 10 . Of course, Ag paste may be applied to a portion of the film 30 where the silicon particle 1 is seated and attached to the bottom of the carrier substrate 10 .

STEP 3. Curing of conductor paste (S300)

A curing step of fixing the conductive paste 20 attached to the silicon particles 1 is performed (S300). By applying heat to the conductive paste 20, the conductive paste 20 can be fixed to the carrier substrate 10.

STEP 4. After polishing the lower surface of the carrier substrate, electrode formation (S400 ~ S600)

Referring to FIGS. 1 and 2D , and removing the lower part of the silicon particle 1 protruding below the carrier substrate 10, the central part 40 of the silicon particle 1 is exposed (removing the lower part, S400).

The lower part removal step (S400) includes a lower surface polishing step of polishing the lower surface of the protruding silicon particle 1 and the cured conductive paste 70.

Then, a first electrode 80 electrically connected to the central portion 40 of the exposed silicon particle 1 is formed (first electrode 80 forming step, S500). The first electrode 80 is made of any one of Al, Ni, Ti, Ag, and Cu as a material.

Next, a second electrode 90 electrically connected to the remaining and cured conductive paste 70 is formed (second electrode 90 forming step, S600). The silicon particle 1 is a solar cell that generates electricity by absorbing sunlight. In the silicon particle 1, the central portion 40 and the surface portion 50 are formed of a semiconductor material having electrodes of different polarities. The silicon particle 1 includes a surface portion 50 formed on the outside of the silicon particle 1; and a central portion 40 surrounded by the surface portion 50.

In the step of forming the second electrode 90 (S600), the surface portion 50 of the silicon particle 1 is connected to the second electrode 90 formed by removing the conductive paste 20, and the first electrode ( 80) and insulated. The second electrode 90 may be formed separately, and the remaining conductive paste 70 may be used as the second electrode.

The silicon particle 1 is a solar cell that generates electricity by absorbing sunlight. The central portion 40 and the surface portion 50 of the silicon particle 1 are formed of semiconductor materials each having electrodes of different polarities. For example, it is provided that the central portion 40 is formed of a P-type semiconductor material and the surface portion 50 is formed of an N-type semiconductor material.

STEP 5. Electrode firing

3 is an electrode firing flowchart showing a firing sequence of the first or second electrode. 4 is an electrode firing state diagram showing how the first electrode is fired by the electrode firing step of FIG. 3 .

3 and 4, after the second electrode 90 forming step (S600), the silicon particle 1 and the first electrode 80 or the second electrode 90 are fired (S630). ); In the structure in which the second electrode 90 is not used, only the first electrode 80 is fired. In the electrode firing step (S630), an electron transfer path between the silicon particle 1 and the first and second electrodes 90 is formed by bonding the silicon particle 1 and the electron transfer material to form an ohmic contact. provided to do

The electron transfer material is characterized in that at least one of Al, Ti, Ag, Au, Pt and Ta.

When formed, the second electrode 90 is formed on the circumference of the cross section of the silicon particle 1. That is, by polishing the silicon particles 1 protruding below the cured conductor paste 70, the polished portion of the silicon particle 1 becomes the center and forms a surface portion around the center.

Alternatively, it may be provided to form the second electrode 90 over the surface of the cured conductive paste 70 and the silicon particle 10 . Alternatively, the second electrode 90 may be omitted.

STEP 6. Separation of silicon particles and various methods thereof

5 is a flow chart of separating silicon particles by an elastic pad showing a sequence of separating silicon particles manufactured using an elastic pad.

Referring to FIG. 5 , the carrier substrate 10 and the silicon particle 1 are finally separated (silicon particle separation step, S700). However, the finally manufactured silicon particle 1 is also provided with various methods of separating according to various surface mounting processes. Hereinafter, various separating methods of the manufactured silicon particle 1 will be described.

(a) Using an elastic pad (S730 ~ S740)

FIG. 6 is an elastic pad attachment diagram showing that an elastic pad is attached to a lower end of a carrier substrate in the process of separating silicon particles by the elastic pad of FIG. 5 .

5 and 6, as a second method of separating the silicon particles 1, first, an elastic pad 100 is attached to the bottom of the carrier substrate 10 (elastic pad 100 attachment step, S710 ).

Then, the silicon particles 1 are separated by applying upward and downward pressure to the elastic pad 100 (elastic pressure separation step, S720).

(b) Adhesion means attached to the bottom of the carrier substrate (S650 ~ S740)

7 is a flow chart for separating silicon particles by attaching an adhesive means, showing a sequence of assisting separation of silicon particles by attaching an adhesive means.

Referring to FIG. 7 , as a fourth method of separating the silicon particles 1, an adhesive means may be attached to the lower end of the carrier substrate 10 before the bump layer attachment step (attachment means attachment step, S650). When the adhesive means is not attached, the silicon particles 1 are separated individually, but when the adhesive means is attached to the bottom of the substrate, the silicon particles 1 are weakly adhered to the adhesive means. An adhesive means may be attached to the bottom of the carrier substrate 10 to prevent the silicon particles 1 from escaping. The adhesive force of the adhesive means may be 2 to 100 gf/inch.

By attaching the adhesive means to the bottom of the carrier substrate 10, there is an advantage in that the silicon particles 1 can be easily transported and surface mounted. The silicon particles 1 manufactured by attaching the adhesive means may be provided to be stored in a reel pack. The silicon particles 1 may be manufactured to slightly deviate from the hole of the carrier substrate 10 and the mounting jig 60 by using an adhesive film and a bump layer.

(c) Using a bump layer (S750 ~ S760)

8 is a flow chart of silicon particle separation by a bump layer showing a sequence of separating silicon particles by attaching a bump layer.

Referring to FIG. 8 , as a third method of separating the silicon particles 1, a layer having bumps corresponding to a plurality of holes is attached to the bottom of the carrier substrate 10 (bump layer attaching step, S730).

In addition, the silicon particles 1 may be separated by applying force to the layer on which the bump is formed (step of pressing and separating the bump layer, S740).

In the case of using the bump layer, the silicon particles 1 may be completely separated.

The bump layer forms protrusions on bumps corresponding to holes formed in the carrier substrate 10 . In addition, the silicon particle 1 cell may be separated from the carrier substrate 10 by applying force to the bump layer.

It may be provided for stamping using a bump layer, that is, for surface mounting in a pick and place method. It can be used for surface mounting by picking up one or a plurality of them from the carrier substrate 10 .

(d) Forming a fixed end on top of silicon particles (S770 ~ S780)

9 is a flow chart for separating silicon particles by a fixed end showing a procedure for assisting separation of silicon particles by adding a fixed end on a carrier substrate. FIG. 10 is a fixed end formation diagram showing a state in which a fixed end is formed on an upper portion of a carrier substrate in the fixed end forming step of FIG. 9 .

9 and 10, as a method of separating the silicon particles 1, after the second electrode 90 forming step, a fixing end 110 for fixing the silicon particles 1 on the carrier substrate 10 Can be formed (fixed end forming step, S770). The silicon particles 1 fixed to the fixed end 110 may be provided to be simultaneously mounted at once. The fixing end is provided to be formed by molding. The carrier substrate 10 is removed after forming the fixed end 110 (S780). The fixed end 110 may be formed of a transparent material.

The silicon particle 1 formed as the fixed end 110 may be provided for pick-and-place surface mounting.

The silicon particle 1 formed as the fixed end 110 may be provided for surface mounting (SMT) as a whole molded as the fixed end 110 . In addition, the formed first electrode 80 and the second electrode 90 may be provided in at least one method of series or parallel.

When the fixed end 110 is formed in block units, a serial or parallel pattern of stamped products in block units may be connected to the PCB by soldering, or may be provided to be connected to a separate connector.

(e) Separation into blocks

In the silicon particle 1 separation step (S700), a plurality of silicon particles 1 may be separated into blocks having a predetermined size. For example, it may be provided to form a block by attaching the adhesive unit in a block unit, and separate it in a block unit at the time of separation.

As an embodiment described as a method of separating silicon particles, (a) using an elastic pad (b) attaching an adhesive to the bottom of a carrier substrate (c) using a bump layer (d) forming a fixed end on top of silicon particles and (e) in block units Separation and the like have been described, but it is also possible to perform a combination of the described methods as necessary.

One embodiment of the present invention described above is only exemplary, and those skilled in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. . Therefore, it will be well understood that the present invention is not limited to the forms mentioned in the detailed description above. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents and alternatives within the spirit and scope of the present invention as defined by the appended claims.

1 : Silicon Particles
10: carrier substrate
20: conductor paste
30: film
40: center
50: surface portion
60: jig for seating
70: cured conductor paste
80: first electrode
90: second electrode
100: elastic pad
110: fixed end

Claims (20)

a paste attaching step of attaching a conductive paste to the carrier substrate;
A silicon particle mounting step of seating silicon particles having a center portion and a surface portion surrounding the center portion in a hole of the carrier substrate;
a curing step of fixing the conductive paste attached to the silicon particles;
a lower removal step of exposing a central portion of the silicon particle by removing a lower portion of the protruding silicon particle;
a first electrode forming step of forming a first electrode electrically connected to the center of the exposed silicon particle;
Silicon particle manufacturing method comprising a; silicon particle separation step of separating the carrier substrate and the silicon particles.
According to claim 1,
After the first electrode forming step,
The silicon particle manufacturing method further comprising a; second electrode forming step of forming a second electrode electrically connected to the remaining conductor paste.
According to claim 1,
After the first electrode forming step,
The silicon particle manufacturing method further comprising a; fixed end forming step of forming a fixed end for fixing the silicon particles on the carrier substrate.
According to claim 1,
The curing step,
A method of manufacturing silicon particles comprising a; conducting paste fixing step of fixing the conductor paste by applying heat.
According to claim 1,
The silicon particle separation step,
an elastic pad attaching step of attaching an elastic pad to the bottom of the carrier substrate; and
and an elastic pressure separation step of separating the silicon particles by applying pressure to the elastic pad.
According to claim 1,
The silicon particle separation step,
a bump layer attaching step of attaching a layer having bumps corresponding to the plurality of holes to a lower portion of the carrier substrate; and
a bump layer pressing and separating step of separating the silicon particles by applying force to the layer on which the bumps are formed; Silicon particle production method comprising a.
According to claim 6,
Before the bump layer attaching step,
The method of manufacturing silicon particles further comprising a step of attaching an adhesive means to a lower portion of the carrier substrate.
According to claim 1,
The first electrode is a silicon particle manufacturing method, characterized in that any one of Al, Ni, Ti, Ag and Cu as a material.
According to claim 2,
The silicon particles,
a surface portion formed outside the silicon particle; and
Including; center surrounded by the surface portion,

The second electrode forming step,
The surface portion of the silicon particle,
A portion of the conductive paste is connected to a second electrode formed by removing a portion,
Silicon particle manufacturing method comprising the; step of being insulated from the first electrode.
According to claim 1,
In the firing step,
An ohmic contact forming step of forming an electron transfer path between the silicon particle and the first and second electrodes by bonding the silicon particle and the electron transfer material to form an ohmic contact. How to make silicon particles.
According to claim 10,
The electron transport material,
A method for producing silicon particles, characterized in that at least one of Al, Ti, Ag, Au, Pt and Ta.
According to claim 2,
The second electrode is a silicon particle manufacturing method, characterized in that formed on the cross-sectional circumference of the silicon particle.
According to claim 1,
The silicon particle separation step,
and a step of preventing separation of the silicon particles by attaching an adhesive means to the bottom of the carrier substrate to prevent the separation of the silicon particles.
According to claim 13,
Silicon particle manufacturing method, characterized in that the adhesive force of the adhesive means is 2 to 100 gf / inch.
According to claim 1,
The silicon particle separation step,
and a block unit separating step of separating the plurality of silicon particles into blocks having a predetermined size.
According to claim 1,
The carrier substrate is a silicon particle manufacturing method, characterized in that it comprises a mounting jig in which a plurality of holes are formed.
According to claim 1,
In the lower removal step,
and a lower surface polishing step of polishing the lower surface of the protruding silicon particle and the cured conductive paste.
According to claim 2,
After the second electrode forming step,
The silicon particle manufacturing method further comprising: an electrode firing step of firing the first electrode and the second electrode formed on the silicon particle.
According to claim 1,
The silicon particle production method, characterized in that the silicon particle is a solar cell that absorbs sunlight to generate electricity.
According to claim 1,
The method of manufacturing silicon particles, characterized in that the central portion and the surface portion are formed of a semiconductor material having electrodes of different polarities, respectively.

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