KR20220142473A - Laminated structure and manufacturing method of the laminated structure - Google Patents

Abstract

Provided are a laminate structure having strong bending resistance and a method for manufacturing the laminate structure. In the laminated structure LS of the present invention in which a first titanium layer (L1), an aluminum layer (L2), and a second titanium layer (L3) are sequentially stacked, each of the first titanium layer and the second titanium layer is X-ray diffraction It has a crystal structure having diffraction peaks on the (002) plane and (100) plane in the Miller index by measurement, and the half width of the diffraction peak on the (002) plane is 1.0 deg or less, and that of the diffraction peak on the (100) plane The full width at half maximum is 0.6 deg or less.

Description

Laminated structure and manufacturing method of the laminated structure

The present invention relates to a laminate structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially stacked, and a method for manufacturing the laminate structure.

This kind of laminated structure is used as a source/drain electrode of a switching element (thin film transistor) in an electronic device such as a display, a smart phone, or an electronic paper (for example, refer to Patent Document 1). On the other hand, as electronic devices having flexibility have been developed in recent years, high bending resistance is required for a laminate structure having a titanium layer having relatively high hardness.

Generally, the titanium layer and aluminum layer of a laminated structure are consistently formed into a film by the sputtering method in a vacuum atmosphere (for example, refer patent document 1). For example, when the titanium layer or the aluminum layer is formed, the inside of the vacuum chamber in which the titanium target or the aluminum target and the substrate are disposed to face each other is evacuated to a predetermined pressure, and then a rare gas (for example, argon gas) is evacuated into the vacuum chamber. By introducing a DC power having a negative potential to the target to form a plasma, sputtering the target by ions of a rare gas ionized in the plasma, and attaching and depositing the sputtered particles scattered from the target to the substrate, A titanium layer or an aluminum layer is formed with a film thickness (eg, 50 nm for the first titanium layer, 500 nm for the aluminum layer, and 50 nm for the second titanium layer). At this time, various sputtering conditions such as electric power input to the target, gas introduction amount of rare gas, and total pressure in the vacuum chamber during film formation are set in consideration of productivity and film thickness distribution (for example, input electric power 20 to 40 kW, total pressure 0.2 to 1.0 Pa).

In order to confirm the bending resistance of the laminated structure, a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated on the surface of the test substrate using a test substrate having a predetermined shape under predetermined sputtering conditions, and then peeled from the test substrate As a result of performing a tensile test on one laminated structure, it was found that the laminated structure more than doubled simply by applying a tensile load necessary to impart an elongation of 5%. In addition, as a result of observing the state of the surface (that is, the surface of the titanium layer) of the laminate structure after the tensile test, it was confirmed that a number of cracks extending in the thickness direction were generated in the titanium layer. Therefore, the inventors of the present inventors have studied diligently to ensure that relatively small crystal grains are aligned in the film thickness direction and have a crystal structure connected such that grain boundaries extend in the film thickness direction, and that nitrogen molecules incorporated into the titanium layer at the time of film formation or It has been found that a laminated structure having strong bending resistance cannot be obtained when a hard and brittle titanium compound such as titanium nitride or titanium oxide is formed at the grain boundary due to impurities such as molecular oxygen.

Patent Document 1: Japanese Patent Application Laid-Open No. 2015-177105

The present invention has been made based on the above knowledge, and an object thereof is to provide a laminate structure having strong bending resistance and a method for manufacturing the laminate structure.

In order to solve the above problem, in the laminated structure according to the present invention in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially stacked, each of the first titanium layer and the second titanium layer is measured by X-ray diffraction measurement. It has a crystal structure having diffraction peaks on the (002) plane and (100) plane in the Miller index, the diffraction peak at the (002) plane has a full width at half maximum of 1.0 deg or less, and the half width of the diffraction peak at the (100) plane is 0.6 deg or less. In this case, the aluminum layer preferably has a crystal structure having a diffraction peak on the (111) plane in the Miller index by X-ray diffraction measurement.

In addition, in order to solve the above problem, the method for manufacturing a laminated structure according to the present invention for manufacturing a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated is a first titanium on a substrate by a sputtering method. a first step of forming a layer, a second step of forming an aluminum layer on the first titanium layer, and a third step of forming a second titanium layer on the aluminum layer, the first step and the third step The partial pressure of nitrogen gas is 3.0×10 ^-4 Pa or less, the partial pressure of oxygen gas is 9.0×10 ^-5 Pa or less, the partial pressure of water vapor gas is 8.0×10 ^-4 Pa or less, and the partial pressure of hydrogen gas is 5.0×10, respectively. A vacuum evacuation process of evacuating the inside of the vacuum chamber in which the titanium target and the substrate are arranged until each reaches ^-5 Pa or less, and introducing a noble gas so that the total pressure in the vacuum chamber is maintained in the range of 0.2 Pa to 0.5 Pa and inputting a predetermined electric power to the titanium target and further comprising a film forming process of forming the first titanium layer and the second titanium layer at a film forming rate in the range of 3 nm/sec to 5 nm/sec. . In this case, in the second step, a rare gas is introduced so that the total pressure in the vacuum chamber in which the aluminum target and the base material are disposed is maintained in the range of 0.2 Pa to 0.5 Pa, and a predetermined electric power is applied to the aluminum target to 7 nm It is preferable to further include a film forming step of forming an aluminum layer into a film at a film forming rate in the range of /sec to 10 nm/sec.

According to the above, impurity gas (eg, nitrogen gas, oxygen gas, water vapor gas, By evacuating until the partial pressure of hydrogen gas) reaches a predetermined value or less, the formation of titanium compounds such as titanium nitride and titanium oxide at the grain boundaries of the first and second titanium layers, respectively, can be suppressed as much as possible. can And, when the film formation rate of each of the first titanium layer and the second titanium layer is set within the range of 3 nm/sec to 5 nm/sec, the first titanium layer and the second titanium layer each have crystal grains having large particle diameters. It can be made to have a crystal structure in which the grain boundaries are not connected in the film thickness direction by overlapping non-uniformly in the film thickness direction.

As a result of X-ray diffraction of the titanium layer formed as described above, a diffraction peak on the (002) plane and a diffraction peak on the (100) plane were confirmed, and the diffraction peak on the (002) plane was The intensity ratio of the diffraction peaks was 0.20 or more. At this time, the half width of the diffraction peak on the (002) plane was 1.0 deg or less, and the half width of the diffraction peak on the (100) plane was 0.6 deg or less. 2 It was found that the formation of a titanium compound at the grain boundaries of each titanium layer can be suppressed, and crystal grains with large grain sizes overlap non-uniformly in the film thickness direction to have a crystal structure in which the grain boundaries are not connected. And even when a tensile load necessary to give an elongation of 5% or 10% is applied in the tensile test for the above-described laminated structure, the elongation of the laminated structure is suppressed to within 10%, and furthermore, even when the surface of the laminated structure is observed after the tensile test It was confirmed that no cracks occurred. Therefore, the laminated structure according to the present invention has strong bending resistance compared to that of the conventional example.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining typically the laminated structure which concerns on embodiment of this invention.
It is a figure explaining typically the sputtering apparatus which implements the manufacturing method of the laminated structure which concerns on embodiment of this invention.
3 : is a figure explaining typically the film-forming chamber Pc1 shown in FIG.
4 is a graph showing the experimental results confirming the effect of the present invention.
5(a) to (c) are diagrams schematically illustrating the crystal structure of a titanium layer formed in Comparative Experiment 1 to Comparative Experiment 3;

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of the manufacturing method of the laminated structure and laminated structure which concerns on this invention with reference to drawings is described.

As shown in Fig. 1 , in the laminated structure LS according to the present embodiment, the polyimide film Pf is adhered to the surface of the glass substrate Sg using the substrate Sw (glass substrate ( Sg) and the polyimide film (Pf) can be peeled off at the interface), the first titanium layer (L1) and the aluminum layer ( L2) and a second titanium layer L3.

As shown in FIG. 2, the sputtering apparatus Sm that can be used during film formation of the laminated structure LS is of a so-called cluster tool method, and includes a central transfer chamber Tc having a transfer robot R, A load lock chamber Lc through a gate valve Gv around the transfer chamber Tc, a vacuum chamber for forming a first titanium layer L1 (hereinafter referred to as a 'film formation chamber') Pc1, and an aluminum layer ( A film forming chamber Pc2 for forming a film L2 and a film forming chamber Pc3 for forming the second titanium layer L3 are respectively connected. Since the same structural parts are installed in the deposition chambers Pc1, Pc2, and Pc3 except for the target used, referring to FIG. 3 , taking the deposition chamber Pc1 as an example, the deposition chamber Pc1 has a turbo An exhaust pipe 11 communicating with a vacuum pump unit Pu composed of a molecular pump or a rotary pump is connected, and the film formation chamber Pc1 can be evacuated to a predetermined vacuum degree (eg, 1×10 ^-6 Pa). have. A gas pipe 13 provided with a mass flow meter 12 is connected to the side wall of the vacuum chamber Pc1 to introduce a rare gas (for example, argon gas) with a controlled flow rate into the film formation chamber Pc1. In the upper part of the film-forming chamber Pc1, a titanium target 2 (a target made of aluminum in the film-forming chamber Pc2) is arranged in a posture facing the base material Sw, and a well-known magnet unit 3 is located above it. are placed

As the target 2 made of titanium, a target having a purity of 99.9% or more is used, and as the target made of aluminum, a target having a purity of 99.99% or more is used. An output is connected to the target 2 from the sputtering power supply Ps, and direct current power having a negative potential can be supplied to the target 2 . In the lower part of the film-forming chamber Pc1, the stage 4 is arrange|positioned so that the target 2 may oppose, and the base material Sw can be installed. In the film formation chamber Pc1, a measuring device 5 for measuring the total pressure therein and the partial pressure of the impurity gas (eg, nitrogen gas, oxygen gas, water vapor gas, hydrogen gas) is provided. As such a measuring instrument 5, a well-known one such as an ionization vacuum meter or a mass spectrometer can be used, and therefore the above description is omitted. Below, the manufacturing method of the laminated structure LS by sputtering apparatus Sm is demonstrated concretely.

After the base material Sw is put into the load lock chamber Lc of an atmospheric atmosphere and the load lock chamber Lc is evacuated, the base material Sw is conveyed to the film-forming chamber Pc1 by the conveyance robot R. . For reference, before introducing the substrate Sw into the load lock chamber Lc, the transfer chamber Tc and each of the film formation chambers Pc1, Pc2, and Pc3 are vacuumed to a predetermined pressure (1×10 ^-3 Pa) in advance. It is exhausted and is in a standby state. When the substrate Sw is installed on the stage 4 of the film formation chamber Pc1, it is continuously evacuated so that the partial pressure of the nitrogen gas measured by the mass spectrometer 5 is 3.0×10 ^-4 Pa or less, and the partial pressure of the oxygen gas is The inside of the film-forming chamber Pc1 is evacuated until the partial pressure of 9.0×10 ^-5 Pa or less, the partial pressure of the water vapor gas becomes 8.0×10 ^-4 Pa or less, and the partial pressure of the hydrogen gas becomes 5.0×10 ^-5 Pa or less (first evacuation process of the process).

Next, when the partial pressure of each gas becomes equal to or less than a predetermined value, argon gas is introduced into the evacuated film formation chamber Pc1 so that the total pressure is maintained in the range of 0.2 Pa to 0.5 Pa, and sputtering power Ps 20 kW to 30 kW of DC power having a negative potential is input to the target 2 from the Then, plasma is formed in the film-forming chamber Pc1. The target 2 is sputtered by ions of argon gas ionized in the plasma. Due to this, the sputtered particles scattered from the target 2 are attached and deposited on the film-forming surface (polyimide film Pf) of the substrate Sw, so that the first titanium layer L1 on the substrate Sw is 3 nm/sec A film is formed at a film formation rate of ˜5 nm/sec (film formation step in the first step). At this time, by appropriately setting the sputtering time, the first titanium layer L1 has a film thickness of, for example, 10 nm to 50 nm.

When a 1st process is complete|finished, the base material Sw will be conveyed to film-forming chamber Pc2, and an evacuation process will be implemented similarly to a 1st process. When the partial pressure of each gas becomes equal to or less than a predetermined value, argon gas is introduced into the evacuated film formation chamber Pc2 so that the total pressure is maintained in the range of 0.2 Pa to 0.5 Pa, and aluminum is supplied from the sputtering power source Ps. 30 kW to 40 kW of DC power having a negative potential is input to the first target 2 . Then, plasma is formed in the deposition chamber (Pc2), the sputtered particles scattered from the target (2) are attached and deposited on the surface of the first titanium layer (L1), the aluminum layer (L2) on the first titanium layer (L1) It forms into a film at the film-forming rate of 7 nm/sec - 10 nm/sec (film-forming process in 2nd process). At this time, by appropriately controlling the sputtering time, the aluminum layer L2 has a film thickness of, for example, 200 nm to 800 nm.

When a 2nd process is complete|finished, the base material Sw will be conveyed to film-forming chamber Pc3, and an evacuation process will be implemented similarly to a 1st process. When the partial pressure of each gas is equal to or less than a predetermined value, the second titanium layer L3 is formed on the aluminum layer L2 at a deposition rate of 3 nm/sec to 5 nm/sec under the same sputtering conditions as in the first process. (the film-forming process in a 3rd process). At this time, the sputtering time is appropriately controlled so that the thickness of the second titanium layer L3 is the same as that of the first titanium layer L1 (for example, 10 to 50 nm).

When the laminate structure LS is manufactured as described above, it is possible to suppress as much as possible impurities from entering the inside of each titanium layer L1 and L3, and a titanium compound such as titanium nitride or titanium oxide is formed at the grain boundary Cf. can be suppressed (refer to the portion enclosed by the dashed-dotted line in FIG. 1). Furthermore, by forming each titanium layer (L1, L3) at a film formation rate in the range of 3 nm/sec to 5 nm/sec, the grain size of the crystal grains (Cg) becomes larger than that of the conventional example, and these crystal grains (Cg) are It overlaps non-uniformly in the film thickness direction, and as a result, it is possible to have a crystal structure in which the grain boundaries Cf are not connected in the film thickness direction (see Fig. 1). In addition, as a result of measuring the X-ray diffraction of these titanium layers (L1, L3), a diffraction peak on the (002) plane and a diffraction peak on the (100) plane were confirmed, and the diffraction peak on the (002) plane was The intensity ratio of the diffraction peaks on the (100) plane was 0.20 or more. At this time, the half width of the diffraction peak on the (002) plane was 1.0 deg or less, and the half width of the diffraction peak on the (100) plane was 0.6 deg or less.

Subsequently, the following experiment was performed using the sputtering device (Sm) in order to confirm the effect.

In the invention experiment, a substrate Sw having a polyimide film Pf attached to the upper surface of the glass substrate Sg is installed on the stage 4 of the film formation chamber Pc1, and then nitrogen gas measured with a mass spectrometer 5 vacuum until the partial pressure of is 1.0×10 ^-4 Pa, the partial pressure of oxygen gas is 8.0×10 ^-5 Pa, the partial pressure of water vapor gas is 5.0×10 ^-4 Pa, and the partial pressure of hydrogen gas is 5.0×10 ^-5 Pa It evacuated (evacuation process of 1st process). At this time, the total pressure in the vacuum chamber Pc1 was 7.3×10 ⁻⁴ Pa. After the vacuum evacuation process, argon gas is introduced into the vacuum chamber Pc1 at a flow rate of 120 sccm so that the total pressure in the vacuum chamber Pc1 is maintained at 0.3 Pa, and 20 ~ 30 kW of DC power is input to the target 2 together with this Thus, a titanium target 2 was sputtered, and a first titanium layer L1 was formed to a film thickness of 50 nm on the surface of the substrate Sw at a film formation rate of 3 nm/sec (film formation step in the first step). The result of X-ray diffraction measurement of the formed first titanium layer L1 is shown by a solid line in FIG. 4 . Referring to Table 1, the diffraction peak at the (002) plane is confirmed near the diffraction angle (2θ) 38° to 39°, and the diffraction peak at the (100) plane is confirmed near the diffraction angle 35° to 36°. , the intensity ratio of the diffraction peak on the (100) plane to the diffraction peak on the (002) plane is 0.25, the half width of the diffraction peak on the (002) plane is 0.5 deg, and the half width of the diffraction peak on the (100) plane is 0.6 deg. After the first process, the substrate Sw is transferred to the film formation chamber Pc2, and the evacuation process is performed in the same manner as in the first process, and then the flow rate of argon gas is maintained so that the total pressure of the film formation chamber Pc2 is maintained at 0.3 Pa. Introduced into the deposition chamber (Pc2) at 120 sccm, 35 to 40 kW of DC power is applied to the aluminum target 2 to sputter the target 2, and the first titanium layer is formed at a deposition rate of 7 nm/sec. On (L1), an aluminum layer (L2) was formed to a film thickness of 500 nm. As a result of measuring X-ray diffraction of the formed aluminum layer L2, a diffraction peak on the (111) plane was confirmed at a diffraction angle (2θ) around 38° to 39°. After the second process, the base material Sw is transferred to the film formation chamber Pc3, the evacuation process is performed in the same manner as in the first process, and then the aluminum layer is formed at a film formation rate of 3 nm/sec under the same film formation conditions as in the first process. A second titanium layer (L3) was formed on (L2) to a film thickness of 50 nm to obtain a laminated structure (LS). As a result of measuring X-ray diffraction of the formed second titanium layer L3, the same diffraction pattern as that of the first titanium layer L1 (refer to FIG. 4 ) was obtained. Then, in order to confirm the bending resistance of the laminated structure LS obtained in this way, a test substrate (polyimide film (Pf)) having a known shape (width 5 mm, length 20 mm, thickness 0.02 mm) was applied to a glass substrate ( After forming on Sg) and sequentially stacking a first titanium layer (L1), an aluminum layer (L2), and a second titanium layer (L3) on the surface of the test substrate under the aforementioned sputtering conditions, the glass substrate (Sg) and the polyi The laminated structure (LS) obtained by peeling from the interface of the mid film (Pf) was subjected to a tensile test (tensile rate of 0.5 mm/min) using a tensile testing machine ('STA-1150' manufactured by ORIENTEC). As a result, 5%, It was confirmed that the elongation amount of the laminated structure was suppressed to within 10% (5%, 8%) even when a tensile load necessary to impart an elongation of 10% was applied. In addition, the resistance (R) when a tensile load giving 5% and 10% elongation is applied using a resistance measuring instrument ('AD7461A', manufactured by ADVANTEST), respectively, and the resistance (R0) when no tensile load is applied As a result of obtaining the resistance increase rate (=(R-R0)/R0), it was confirmed that it could be suppressed within 10% (5%, 8%). In addition, as a result of observing the surface state of the laminated structure LS after the tensile test using a commercially available microscope (Microscope), it was confirmed that cracks did not occur. From these results, it turned out that the laminated structure LS obtained by the experiment of this invention has strong bending resistance compared with the thing of the existing example.

[Table 1]

Next, in order to compare with the above invention experiment, a comparative experiment was conducted as follows. In Comparative Experiment 1, in each of the film formation steps of the first process and the third process, the total pressure in the film formation chamber Pc1 was maintained at 0.6 Pa and the film formation rate was 2 nm/sec, except that A laminated structure (LS) was obtained in the same manner. As a result of performing a tensile test under the same conditions as in the experiment of the invention, it was confirmed that the elongation amount of the laminated structure LS was more than doubled. In addition, as a result of obtaining the resistance increase rate in the same manner as in the above invention experiment, it was 30% and 400%. In addition, as a result of observing the surface state of the laminated structure LS after the tensile test in the same manner as in the above invention experiment, it was confirmed that cracks occurred and whitened. From these results, it was found that the laminated structure LS obtained in Comparative Experiment 1 had weak bending resistance. Incidentally, as a result of measuring the X-ray diffraction of the first titanium layer (L1) formed in Comparative Experiment 1, as shown by a broken line in FIG. 4, a diffraction peak at the (100) plane was not confirmed, and the (002) plane Only the diffraction peak at was confirmed, and the half width of the diffraction peak at the (002) plane was 0.9 deg. In the case of having such a diffraction pattern, as shown in FIG. can guess

In Comparative Experiment 2, a laminated structure LS was obtained in the same manner as in the above invention experiment, except that the vacuum evacuation process was not performed in each of the first process and the third process (only the film forming process was performed). That is, when the total pressure in the vacuum chamber Pc1 reached a predetermined vacuum degree (2.8 x 10 ^-3 Pa), the noble gas was introduced into the vacuum chamber Pc1 irrespective of the partial pressure of the impurity gas. As a result of measuring the partial pressure of the impurity gas at this time, the partial pressure of the nitrogen gas was 5.0 × 10 ^-4 Pa, the partial pressure of the oxygen gas was 2.0 × 10 ^-4 Pa, the partial pressure of the water vapor gas was 2.0 × 10 ^-3 Pa, and the partial pressure of the hydrogen gas The partial pressure was 5.0×10 ^-5 Pa, which was below the standard value except for hydrogen gas. As a result of performing a tensile test under the same conditions as in the experiment of the invention, it was confirmed that the elongation amount of the laminated structure LS was more than doubled. In addition, as a result of obtaining the resistance increase rate in the same manner as in the experiment of the invention, it was 120% and 650%, which were worse than those of Comparative Experiment 1. In addition, as a result of observing the surface state of the laminated structure LS after the tensile test in the same manner as in the above invention experiment, it was confirmed that cracks occurred and whitened. From these results, it was found that the laminated structure LS obtained in Comparative Experiment 2 had weak bending resistance. Incidentally, as a result of measuring the X-ray diffraction of the formed first titanium layer L1, not only a diffraction peak on the (002) plane but also a diffraction peak on the (100) plane was observed, but a diffraction peak on the (002) plane was observed. The intensity ratio of the diffraction peak in the (100) plane to α was 0.11, which was less than 0.20. In addition, the half width of the diffraction peak in the (100) plane was 0.7 deg, which is larger than 0.6 deg. In the case of having such a diffraction pattern, it can be inferred that a titanium compound (Im) such as titanium nitride and titanium oxide is formed at the grain boundary (Cf) as shown in FIG. 5( b ).

Also, in Comparative Experiment 3, the film formation rate was 2 nm/sec by maintaining the total pressure in the film formation chambers Pc1 and Pc3 at 0.6 Pa during film formation in each of the first process and the third process, and the first process and the third process A laminated structure LS was obtained in the same manner as in the above invention experiment, except that the vacuum evacuation process was not performed in each case (only the film forming process was performed). As a result of performing a tensile test under the same conditions as in the experiment of the invention, it was confirmed that the elongation amount of the laminated structure LS was more than doubled. Moreover, as a result of calculating|requiring the resistance increase rate similarly to the said invention experiment, it was 300% and 900% worse than the comparative experiment 2. In addition, as a result of observing the surface state of the laminated structure LS after the tensile test in the same manner as in the above invention experiment, it was confirmed that cracks occurred and whitened. These results showed that the laminated structure LS obtained in this comparative experiment 3 had bending resistance weaker than the said comparative experiments 1 and 2. In addition, as a result of measuring the X-ray diffraction of the first titanium layer (L1) formed in this comparative experiment 3, the diffraction peak at the (100) plane was not confirmed, and only the diffraction peak at the (002) plane was confirmed. , the half width of the diffraction peak on the (002) plane was 0.8 deg. In the case of having such a diffraction pattern, as shown in Fig. 5(c), small crystal grains (Cg) are aligned in the film thickness direction, and the crystal grain boundary (Cf) has a connected crystal structure as it extends in the film thickness direction. It can be inferred from the fact that the titanium compound (Im) is formed at the grain boundary (Cf).

Although the embodiment of the present invention has been described above, various modifications may be made without departing from the scope of the technical spirit of the present invention. In the above embodiment, as the laminate structure LS, the first titanium layer L1 , the aluminum layer L2 , and the third titanium layer L3 were laminated as an example, but additionally on the third titanium layer L3 . The present invention can also be applied to a case in which a titanium nitride layer is laminated.

Further, in the above embodiment, the substrate Sw is transported in-situ between the film formation chambers Pc1, Pc2, and Pc3, and the first titanium layer L1, the aluminum layer L2, A case in which the second titanium layer (L3) is consistently formed as an example has been described, but the present invention is not limited thereto, and the first titanium layer (L1), the second titanium layer (L3), and the aluminum layer (L2) are formed by different sputtering apparatuses. The present invention can also be applied when carrying out Also, the first titanium layer L1 and the second titanium layer L3 may be formed in the same deposition chamber.

LS… laminated structure
L1… first titanium layer
L2… aluminum layer
L3… second titanium layer
Sw… write
Pc1, Pc2, Pc3... Film formation chamber (vacuum chamber)
2… target

Claims (4)

In a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially stacked,
Each of the first titanium layer and the second titanium layer has a crystal structure having diffraction peaks on the (002) plane and the (100) plane in Miller index by X-ray diffraction measurement, and the (002) A layered structure, characterized in that the half width of the diffraction peak in the plane is 1.0 deg or less, and the half width of the diffraction peak in the (100) plane is 0.6 deg or less. The method according to claim 1,
The aluminum layer, characterized in that it has a crystal structure having a diffraction peak on the (111) plane in the Miller index by the X-ray diffraction measurement, the laminate structure. In the method for manufacturing a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially stacked,
A sputtering method includes a first step of forming the first titanium layer on a substrate, a second step of forming the aluminum layer on the first titanium layer, and depositing the second titanium layer on the aluminum layer. It includes a third process of
In each of the first step and the third step, the partial pressure of nitrogen gas is 3.0×10 ^-4 Pa or less, the partial pressure of oxygen gas is 9.0×10 ^-5 Pa or less, and the partial pressure of water vapor gas is 8.0×10 ^-4 Pa or less , an evacuation step of evacuating the inside of the vacuum chamber in which the titanium target and the base material are disposed until the partial pressure of hydrogen gas reaches 5.0×10 ^-5 Pa or less, respectively, and the total pressure in the vacuum chamber is 0.2 Pa The first titanium layer and the second titanium layer are introduced at a deposition rate in the range of 3 nm/sec to 5 nm/sec by introducing a rare gas so as to be maintained in the range of 0.5 Pa, and applying a predetermined electric power to the titanium target. A method for manufacturing a laminated structure, characterized in that it further comprises a film forming step of forming a film. 4. The method of claim 3,
In the second step, the rare gas is introduced so that the total pressure in the vacuum chamber in which the aluminum target and the base material are disposed is maintained in the range of 0.2 Pa to 0.5 Pa, and a predetermined electric power is applied to the aluminum target 7 The method for manufacturing a laminated structure, characterized in that it further comprises a film forming step of forming the aluminum layer into a film at a film forming rate in the range of nm/sec to 10 nm/sec.

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