TW202216436A - Laminated structure, and method for manufacturing laminated structure - Google Patents

Abstract

Provided are: a laminated structure having strong bending-resistance; and a method for manufacturing the laminated structure. A laminated structure LS according to the present invention has a first titanium layer L1, an aluminum layer L2, and a second titanium layer L3 which are sequentially laminated, wherein each of the first and second titanium layers has a crystal structure having diffraction peaks on a (002) plane and a (100) plane, in the Miller index as measured by the X-ray diffraction, the half-value width of the diffraction peak on the (002) plane is at most 1.0 deg, and the half-value width of the diffraction peak on the (100) plane is at most 0.6 deg.

Description

Laminated structure and method of manufacturing the same

The present invention relates to a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated, and a method for producing the laminated structure.

Such a laminated structure is used as source/drain electrodes of switching elements (thin film transistors) in electronic devices such as displays, smartphones, and electronic paper (for example, see Patent Document 1). On the other hand, with the development of flexible electronic devices in recent years, high buckling resistance is required for a laminate structure having a titanium layer having a relatively high hardness.

Generally, the titanium layer or the aluminum layer of the laminated structure is uniformly formed by sputtering in a vacuum atmosphere (for example, refer to Patent Document 1). For example, when forming a titanium layer or an aluminum layer, a vacuum chamber in which a titanium or aluminum target and a substrate are arranged to face each other is evacuated to a specific pressure, and then a rare gas (eg, argon) is introduced into the vacuum chamber to The target is injected with a DC power having a negative potential to form a plasma, and the target is sputtered by ions of an ionized rare gas in the plasma. For example, the first titanium layer is 50 nm, the aluminum layer is 500 nm, and the second titanium layer is 50 nm) to form a titanium layer or an aluminum layer. At this time, various sputtering conditions such as the power applied to the target, the gas introduction amount of the rare gas, and the total pressure in the vacuum chamber during film formation are set in consideration of productivity and film thickness distribution (for example, applied power of 20 to 40 kW, Full pressure 0.2～1.0Pa).

Here, in order to confirm the buckling resistance of the laminated structure, a test substrate of a specific shape was used, and a first titanium layer, an aluminum layer, and a second titanium layer were sequentially laminated on the surface of the test substrate under specific sputtering conditions. , when a tensile test was performed on the laminated structure peeled from the test base material, it was found that the laminated structure stretched by 2 times or more by applying only the tensile load necessary to provide an elongation of 5%. In addition, when the state of the surface of the laminated structure after the tensile test (that is, the surface of the titanium layer) was observed, it was found that a large number of cracks extending in the thickness direction were generated in the titanium layer. Here, the inventors of the present invention have repeatedly conducted intensive research, and obtained a crystal structure in which relatively small crystal grains are arranged in the film thickness direction and have a crystal structure connected so that the crystal grain boundaries extend in the film thickness direction. If impurities such as nitrogen molecules or oxygen molecules are incorporated into the titanium layer to form titanium compounds such as titanium nitride or titanium oxide that make crystal grain boundaries hard and brittle, it is known that the laminated structure cannot obtain strong buckling resistance. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-177105

[The problem to be solved by the invention]

The present invention has been made in view of the above-mentioned knowledge and knowledge, and an object of the present invention is to provide a laminated structure having strong buckling resistance and a method for producing the laminated structure. [Means for solving problems]

In order to solve the aforementioned problems, the laminated structure of the present invention in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated is characterized in that each titanium layer of the first and second titanium layers has an X-ray winding. The (002) plane and (100) plane of the Miller index measured by radiation have a crystal structure with diffraction peaks. The full width at half maximum of the emission peak is 0.6deg or less. In this case, the aluminum layer preferably has a crystal structure having a diffraction peak on the (111) plane of the Miller index measured by X-ray diffraction.

In addition, in order to solve the above-mentioned problems, a method for manufacturing a laminated structure of the present invention for manufacturing a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated comprises: by sputtering, on The first step of forming a first titanium layer on the substrate, the second step of forming an aluminum layer on the first titanium layer, and the third step of forming a second titanium layer on the aluminum layer; the first and Each step of the third step further includes: until the partial pressure of nitrogen is 3.0×10 ^-4 Pa or less, the partial pressure of oxygen is 9.0×10 ^-5 Pa or less, the partial pressure of water vapor is 8.0×10 ^-4 Pa or less, and the partial pressure of hydrogen is reached. Up to 5.0×10 ^-5 Pa or less, vacuum evacuation is carried out in the vacuum evacuation step in the vacuum chamber where the titanium target and the substrate are arranged, and the rare earth is introduced so that the total pressure in the vacuum chamber is maintained within the range of 0.2Pa to 0.5Pa. A gas is applied to a titanium target, and a specific electric power is applied to form a film of each of the first and second titanium layers at a film-forming rate in the range of 3 nm/sec to 5 nm/sec. In this case, the second step preferably further includes introducing a rare gas so that the total pressure in the vacuum chamber in which the aluminum target and the substrate are arranged is maintained within a range of 0.2Pa to 0.5Pa, and the aluminum A film-forming step of forming an aluminum layer at a film-forming speed in the range of 7 nm/sec to 10 nm/sec by applying a specific electric power to the target.

According to the above, prior to forming the first titanium layer, the aluminum layer and the second titanium layer by sputtering in the vacuum chamber in a vacuum atmosphere, the vacuum chamber is evacuated until the impurity gas (such as nitrogen, oxygen, water) When the partial pressure of vapor gas, hydrogen) becomes below a specific value, it is possible to suppress the formation of titanium compounds such as titanium nitride and titanium oxide at the crystal grain boundaries of each of the first and second titanium layers. Next, when each of the first and second titanium layers is formed into a film, if the film-forming speed is in the range of 3 nm/sec to 5 nm/sec, each of the first and second titanium layers can have a large particle size. A crystal structure in which crystal grains are irregularly overlapped in the film thickness direction and crystal grain boundaries are not connected in the film thickness direction.

When the titanium layer formed as described above is subjected to X-ray diffraction, the diffraction peak on the (002) plane and the diffraction peak on the (100) plane are confirmed, and the diffraction peak on the (100) plane is opposite to the diffraction peak on the (100) plane. The intensity ratio of the diffraction peak of the 002) plane is 0.20 or more. At this time, the full width at half maximum of the diffraction peak on the (002) plane is 1.0 degrees or less, and the full width at half maximum of the diffraction peak on the (100) plane is 0.6 degrees or less. In the case of patterning, the formation of titanium compounds is suppressed in the crystal grain boundaries of each titanium layer of the first and second titanium layers, and the crystal grains with large particle diameters are irregularly overlapped in the film thickness direction and the crystal grain boundaries are not connected. Crystal structure. Next, in the tensile test of the same laminate structure as described above, even if a tensile load required for an elongation of 5% or 10% was applied, the elongation of the laminate structure was suppressed within 10%. The surface observation of the laminated structure after the test also confirmed that no cracks occurred. As a result, the laminated structure of the present invention has higher buckling resistance than the conventional examples.

Hereinafter, embodiments of the laminated structure and the method for producing the laminated structure of the present invention will be described with reference to the drawings.

As shown in FIG. 1 , in the laminated structure LS of the present embodiment, the base material Sw is formed by, for example, pasting a polyimide film Pf on the surface of a glass substrate Sg (on the glass substrate Sg and the polyimide film Pf). The boundary surface can be peeled off), and the surface of the substrate Sw is provided with a first titanium layer L1, an aluminum layer L2, and a second titanium layer L3, which are consistently formed (laminated) sequentially by sputtering in a vacuum atmosphere. .

As shown in FIG. 2 , the sputtering apparatus Sm that can be used for the above-mentioned laminated structure LS is a so-called cluster tool type apparatus, and includes a central transfer vacuum chamber Tc provided with a transfer robot R, and transfers the central The surrounding of the vacuum chamber Tc is connected to the load-out vacuum chamber Lc, the vacuum chamber for forming the first titanium layer L1 (hereinafter referred to as the "film-forming vacuum chamber") Pc1, and the film-forming aluminum layer L2 through a gate valve Gv, respectively. The film-forming vacuum chamber Pc2 and the film-forming vacuum chamber Pc3 for forming the second titanium layer L3. Here, the film formation vacuum chambers Pc1, Pc2, and Pc3 are provided with the same structural components except for the target to be used. Therefore, referring to FIG. 3 and taking the film formation vacuum chamber Pc1 as an example, the film formation vacuum chamber Pc1 is connected to the exhaust pipe 11 leading to the ^vacuum pump unit Pu composed of a turbo molecular pump or a rotary pump. A gas pipe 13 interposed with a mass flow controller 12 is connected to the side wall of the vacuum chamber Pc1, and a rare gas (eg, argon gas) whose flow is controlled can be introduced into the film-forming vacuum chamber Pc1. On the upper part of the deposition vacuum chamber Pc1, a titanium target 2 (a target made of aluminum in the deposition vacuum chamber Pc2) is placed in a posture facing the substrate Sw, and a known magnet unit 3 is placed above it.

The target 2 made of titanium with a purity of 99.9% or more was used, and an aluminum target with a purity of 99.99% or more was used. The output from the sputtering power supply Ps is connected to the target 2 , and DC power having a negative potential can be supplied to the target 2 . In the lower part of the film-forming vacuum chamber Pc1, the stage 4 facing the target 2 is arranged, and the base material Sw can be installed. In the film-forming vacuum chamber Pc1, a measuring device 5 for measuring the internal total pressure and the partial pressure of impurity gas (eg, nitrogen, oxygen, steam gas, and hydrogen) is installed. As such a measuring device 5, a known measuring device such as an ionization vacuum gauge or a mass spectrometer can be used, and thus further description is omitted. Hereinafter, the manufacturing method of the laminated structure LS using the sputtering apparatus Sm is demonstrated concretely.

The base material Sw is loaded into the load-carrying/unloading vacuum chamber Lc of the atmospheric atmosphere, and the load-carrying/unloading vacuum chamber Lc is evacuated and evacuated. In addition, before the substrate Sw is loaded into the loading and unloading vacuum chamber Lc, the transport vacuum chamber Tc and the respective film-forming vacuum chambers Pc1, Pc2, and Pc3 are evacuated to a predetermined pressure (1×10 ^-3 Pa), and becomes the standby state. When the substrate Sw is set on the stage 4 of the film-forming vacuum chamber Pc1, the vacuum evacuation is continued until the partial pressure of nitrogen measured by the mass analyzer 5 reaches 3.0×10 ⁻⁴ Pa or less and the partial pressure of oxygen is 9.0 ×10 ^-5 Pa or less, water vapor partial pressure 8.0 × 10 ^-4 Pa or less, and hydrogen partial pressure 5.0 × 10 ^-5 Pa or less, evacuate the film-forming vacuum chamber Pc1 (evacuation step of the first step) .

Next, when the partial pressures of the respective gases become equal to or less than a specific value, argon gas is introduced into the evacuated film-forming vacuum chamber Pc1 so that the total pressure thereof is maintained in the range of 0.2Pa to 0.5Pa, and sputtering is performed by sputtering. The power supply Ps supplies 20 kW to 30 kW of DC power having a negative potential to the target 2 . Then, plasma is formed in the film-forming vacuum chamber Pc1. The target 2 is sputtered by ions of ionized argon in a plasma. Thereby, the sputtering particles scattered from the target 2 are adhered and deposited on the film-forming surface (polyimide film Pf) of the base material Sw, and the film-forming speed is 3 nm/sec to 5 nm/sec on the base material Sw. The first titanium layer L1 is formed into a film (film formation step in the first step). At this time, the sputtering time is appropriately set, and the first titanium layer L1 is formed to have a thickness of, for example, 10 nm to 50 nm.

After the completion of the first step, the substrate Sw is transferred to the film-forming vacuum chamber Pc2, and a vacuum evacuation step is performed in the same manner as the first step. When the partial pressure of each gas becomes below a specific value, argon gas is introduced into the film-forming vacuum chamber Pc2 evacuated to keep the total pressure in the range of 0.2Pa to 0.5Pa, and the sputtering power supply Ps is used to introduce argon gas. A DC power of 30 kW to 40 kW having a negative potential is supplied to the target 2 made of aluminum. Then, a plasma is formed in the film-forming vacuum chamber Pc2, and the sputtered particles scattered from the target 2 are adhered and deposited on the surface of the first titanium layer L1, and the sputtering particles are deposited on the first titanium layer L1 at a rate of 7 nm/sec to 10 nm/sec. The aluminum layer L2 was formed at the film-forming speed (film-forming step of the second step). At this time, the sputtering time is appropriately controlled, and the aluminum layer L2 is formed to have a thickness of, for example, 200 nm to 800 nm.

After the second step is completed, the substrate Sw is transferred to the film-forming vacuum chamber Pc3, and the vacuum evacuation step is performed in the same manner as in the first step. When the partial pressures of the respective gases are equal to or less than a specific value, the second titanium layer L3 (in the first step) is formed on the aluminum layer L2 at a film deposition rate of 3 nm/sec to 5 nm/sec under the same sputtering conditions as in the first step. 3-step film-forming step). At this time, the sputtering time is appropriately controlled, and the second titanium layer L3 is formed to have the same film thickness (for example, 10 to 50 nm) as the first titanium layer L1.

When the laminated structure LS is produced as described above, it is possible to suppress the introduction of impurities into the respective titanium layers L1 and L3 and to suppress the formation of titanium compounds such as titanium nitride or titanium oxide in the grain boundaries Cf (see FIG. 1 ). part surrounded by a single-dotted line). In addition, by forming the respective titanium layers L1 and L3 at a film forming rate in the range of 3 nm/sec to 5 nm/sec, the grain size of the crystal grains Cg is made larger than that in the previous example, and these crystal grains Cg are in the These are irregularly overlapped in the film thickness direction, and as a result, it is possible to have a crystal structure in which the crystal grain boundaries Cf are not connected in the film thickness direction (see FIG. 1 ). In addition, when the X-ray diffraction of such titanium layers L1 and L3 was measured, it was confirmed that the diffraction peak on the (002) plane and the diffraction peak on the (100) plane, and the diffraction peak on the (100) plane was opposite to ( The intensity ratio of the diffraction peak of the 002) plane is 0.20 or more. At this time, the full width at half maximum of the diffraction peak on the (002) plane is 1.0 degrees or less, and the full width at half maximum of the diffraction peak on the (100) plane is 0.6 degrees or less.

Next, in order to confirm the aforementioned effects, the following experiments were performed using the aforementioned sputtering apparatus Sm.

In the invention experiment, the base material Sw is to stick the polyimide film Pf on the glass substrate Sg, and after the base material Sw is set on the stage 4 of the film-forming vacuum chamber Pc1, vacuum exhaust is performed until the utilization quality is reached. The nitrogen partial pressure measured by the analyzer 5 is 1.0×10 ^-4 Pa, the oxygen partial pressure is 8.0×10 ^-5 Pa, the water vapor partial pressure is 5.0×10 ^-4 Pa, and the hydrogen partial pressure is 5.0×10 ^-5 Pa (step 1). the vacuum exhaust step). At this time, the total pressure in the vacuum chamber Pc1 was 7.3×10 ⁻⁴ Pa. After the vacuum evacuation step, argon gas was introduced into the vacuum chamber Pc1 at a flow rate of 120 sccm so that the total pressure in the vacuum chamber Pc1 was maintained at 0.3 Pa, and at the same time, 20 to 30 kW of DC power was supplied to the target 2 to sputter a titanium target. 2. A first titanium layer L1 with a thickness of 50 nm is formed on the surface of the substrate Sw at a film formation rate of 3 nm/sec (film formation step of the first step). The measurement result of X-ray diffraction of the film-formed first titanium layer L1 is shown in FIG. 4 as a solid line. Also referring to Table 1, the diffraction peaks on the (002) plane around the diffraction angle (2θ) of 38 to 39° and the diffraction peaks on the (100) plane around the diffraction angle of 35 to 36° were confirmed, respectively. The intensity ratio of the diffraction peak on the (100) plane to the diffraction peak on the (002) plane is 0.25, the full width at half maximum of the diffraction peak on the (002) plane is 0.5deg, and the diffraction peak on the (100) plane The full amplitude at half maximum of the peak is 0.6deg. After the first step, the substrate Sw was transferred to the film formation vacuum chamber Pc2, and after the vacuum evacuation step was performed in the same manner as the first step, argon gas was added to the film formation vacuum chamber Pc2 so that the total pressure of the film formation vacuum chamber Pc2 was maintained at 0.3 Pa. A flow rate of 120 sccm was introduced into the film-forming vacuum chamber Pc2, and at the same time, 35 to 40 kW of DC power was supplied to the aluminum target 2 to sputter the target 2, and a film of 500 nm was formed on the first titanium layer L1 at a film-forming speed of 7 nm/sec. Thick aluminum layer L2. After the X-ray diffraction of the formed aluminum layer L2 was measured, the diffraction peak on the (111) plane was confirmed in the vicinity of the diffraction angle (2θ) of 38 to 39°. After the second step, the substrate Sw was transferred to the film-forming vacuum chamber Pc3, and a vacuum evacuation step was performed in the same manner as in the first step. Then, the film-forming speed was 3 nm/sec under the same film-forming conditions as in the first step. A layered structure LS was obtained by forming a second titanium layer L3 with a thickness of 50 nm on the aluminum layer L2. After the X-ray diffraction of the formed second titanium layer L3 was measured, a diffraction pattern similar to that of the first titanium layer L1 was obtained (see FIG. 4 ). Next, in order to confirm the buckling resistance of the thus obtained laminated structure LS, a test substrate (polyimide film) having a known shape (width 5 mm, length 20 mm, thickness 0.02 mm) was formed on the glass substrate Sg Pf), after the first titanium layer L1, the aluminum layer L2, and the second titanium layer L3 were sequentially layered on the surface of the test substrate under the aforementioned sputtering conditions, for the boundary surface between the glass substrate Sg and the polyimide film Pf The obtained laminated structure LS was peeled off and subjected to a tensile test (tensile speed: 0.5 mm/min) using a tensile tester (“STA-1150” manufactured by ORIENTEC), and it was confirmed that even if an elongation of 5% and 10% was applied The elongation of the laminated structure is also suppressed within 10% (5%, 8%) by the tensile load necessary for the load. In addition, the resistance R when a tensile load with an elongation amount of 5% and 10% was applied was measured using a resistance measuring device (“AD7461A” manufactured by ADVANTEST), respectively, and the increase in resistance relative to the resistance R0 when no tensile load was applied was obtained. After the ratio (=(R-R0)/R0), it was confirmed that it could be suppressed within 10% (5%, 8%). In addition, when the surface state of the laminated structure LS after the tensile test was observed using a commercially available Microscope, it was confirmed that no cracks occurred. From these results, it is understood that the laminated structure LS obtained in the experiments of the present invention has stronger buckling resistance than the conventional examples.

Next, in order to compare with the aforementioned inventive experiments, the following comparative experiments were conducted. In Comparative Experiment 1, the same procedure as in the above-mentioned invention experiment was performed except that the total pressure in the film-forming vacuum chamber Pc1 in the film-forming steps of the first and third steps was maintained at 0.6 Pa and the film-forming speed was set to 2 nm/sec. method to obtain the layered structure LS. When the tensile test was carried out under the same conditions as in the above-mentioned invention experiment, it was confirmed that the amount of elongation of the laminated structure LS was 2 times or more. Moreover, when the resistance increase rate was calculated|required similarly to the said invention experiment, it was 30% and 400%. In addition, when the surface state of the laminated structure LS after the tensile test was observed in the same manner as in the above-described invention experiment, it was confirmed that cracks were generated and whitened. From these results, it was found that the laminated structure LS obtained in this comparative experiment 1 had weak buckling resistance. In addition, when measuring the X-ray diffraction of the first titanium layer L1 formed in this comparative experiment 1, as shown by the dotted line in FIG. The diffraction peak of the 002) plane, the full amplitude at half maximum of the diffraction peak of the (002) plane is 0.9deg. With such a diffraction pattern, as shown in FIG. 5( a ), it is presumed that relatively small crystal grains Cg are arranged in the film thickness direction and have a crystal structure connected so that the crystal grain boundaries Cf extend in the film thickness direction.

Further, in Comparative Experiment 2, a laminated structure LS was obtained in the same manner as in the aforementioned Inventive Experiment, except that the vacuum evacuation step was not performed in each of the first and third steps (only the film-forming step was performed). That is, when the total pressure in the vacuum chamber Pc1 reaches a certain degree of vacuum (2.8×10 ⁻³ Pa), the rare gas is introduced into the vacuum chamber Pc1 regardless of the partial pressure of the impurity gas. When the partial pressure of the impurity gas at this time was measured, the partial pressure of nitrogen was 5.0×10 ^-4 Pa, the partial pressure of oxygen was 2.0×10 ^-4 Pa, the partial pressure of water vapor was 2.0×10 ^-3 Pa, and the partial pressure of hydrogen was 5.0×10 ^{- 5} Pa, except for hydrogen, which are all lower than the reference value. When the tensile test was carried out under the same conditions as in the above-mentioned invention experiment, it was confirmed that the amount of elongation of the laminated structure LS was 2 times or more. Moreover, when the resistance increase rate was calculated|required similarly to the said invention experiment, it was 120% and 650% which were worse than the comparative experiment 1. In addition, when the surface state of the laminated structure LS after the tensile test was observed in the same manner as in the above-described invention experiment, it was confirmed that cracks were generated and whitened. From these results, it was found that the laminated structure LS obtained in this comparative experiment 2 had weak buckling resistance. When the X-ray diffraction of the first titanium layer L1 formed into a film was measured, not only the diffraction peak on the (002) plane but also the diffraction peak on the (100) plane was observed, and the diffraction peak on the (100) plane was observed. The intensity ratio of the diffraction peak to the diffraction peak at the (002) plane is 0.11, which is smaller than 0.20. In addition, the full width at half maximum of the diffraction peak on the (100) plane is 0.7 deg, which is larger than 0.6 deg. In the case of having such a diffraction pattern, as shown in FIG. 5( b ), it is presumed that a titanium compound Im such as titanium nitride or titanium oxide is formed in the crystal grain boundary Cf.

In addition, in Comparative Experiment 3, in addition to maintaining the total pressure in the film-forming vacuum chambers Pc1 and Pc3 at 0.6 Pa and setting the film-forming speed to 2 nm/sec during the film formation in the first and third steps, the first and third A laminated structure LS was obtained in the same manner as in the aforementioned inventive experiment, except for the point where the vacuum evacuation step was not performed in each of the third steps (the point where only the film formation step was performed). When the tensile test was carried out under the same conditions as in the aforementioned invention experiment, it was confirmed that the amount of elongation of the laminated structure LS was 2 times or more. Moreover, when the resistance increase rate was calculated|required similarly to the said invention experiment, it was 300% and 900% which were worse than the comparative experiment 2. In addition, when the surface state of the laminated structure LS after the tensile test was observed in the same manner as in the above-mentioned invention experiment, it was confirmed that cracks were generated and whitened. From these results, it can be seen that the laminated structure LS obtained in this Comparative Experiment 3 has a buckling resistance weaker than that of the above-mentioned Comparative Experiments 1 and 2. In addition, when the X-ray diffraction of the first titanium layer L1 formed into a film in Comparative Experiment 3 was measured, the diffraction peak on the (100) plane was not observed, and only the diffraction peak on the (002) plane was observed. The full width at half maximum of the diffraction peak on the (002) plane is 0.8deg. In the case of having such a diffraction pattern, as shown in Fig. 5(c), it is presumed that relatively small crystal grains Cg are arranged in the film thickness direction and have a crystal structure connected so that the crystal grain boundaries Cf extend in the film thickness direction, In addition, the titanium compound Im is formed in the grain boundary Cf thereof.

The embodiment of the present invention has been described above, but various modifications can be made without departing from the technical idea of the present invention. In the above-mentioned embodiment, as the laminated structure LS, the first titanium layer L1, the aluminum layer L2, and the second titanium layer L3 are laminated as an example. Titanium layers are also applicable to the present invention.

In addition, in the aforementioned embodiment, the substrate Sw is transferred in-situ between the film-forming vacuum chambers Pc1, Pc2, and Pc3, and the first titanium layer L1, aluminum The case of the layer L2 and the second titanium layer L3 is described as an example, but it is not limited to this. The present invention can also be applied to the first and second titanium layers L1 and L3 and the aluminum layer L2 using different sputtering apparatuses. occasion. In addition, the first titanium layer L1 and the second titanium layer L3 may be formed in the same film formation vacuum chamber.

LS: Layered Structure L1: 1st titanium layer L2: Aluminum layer L3: 2nd Titanium Layer Sw: substrate Pc1, Pc2, Pc3: Film-forming vacuum chamber (vacuum chamber) 2: target

Fig. 1 is a diagram schematically illustrating a laminated structure of an embodiment of the present invention. It is a figure explaining the sputtering apparatus which carried out the manufacturing method of the laminated structure which concerns on embodiment of this invention typically. [ Fig. 3] Fig. 3 is a diagram schematically illustrating the deposition vacuum chamber Pc1 shown in Fig. 2 . [ Fig. 4] Fig. 4 is a diagram showing the results of experiments confirming the effects of the present invention. 5( a ) to ( c ) are diagrams schematically illustrating the crystal structures of the titanium layers formed in Comparative Experiments 1 to 3. FIG.

Claims (4)

A layered structure, wherein a first titanium layer, an aluminum layer, and a second titanium layer are layered in sequence; Each of the first and second titanium layers has a crystal structure with diffraction peaks on the (002) plane and (100) plane of Miller indices obtained by X-ray diffraction measurement, and half of the diffraction peak on the (002) plane. The full width of the peak is 1.0 degrees or less, and the full width at half maximum of the diffraction peak at (100) is 0.6 degrees or less. According to the laminated structure of claim 1, the aluminum layer has a crystal structure having a diffraction peak on the (111) plane of the Miller index obtained by X-ray diffraction measurement. A method for manufacturing a laminated structure, which is a method for manufacturing a laminated structure in which a first titanium layer, an aluminum layer, and a second titanium layer are sequentially laminated, comprising: forming a film on a substrate by a sputtering method. 1. The first step of forming a titanium layer, the second step of forming an aluminum layer on the first titanium layer, and the third step of forming a second titanium layer on the aluminum layer; each step of the first and third steps , and further include: until the partial pressure of nitrogen is 3.0×10 ^-4 Pa or less, the oxygen partial pressure is 9.0×10 ^-5 Pa or less, the water vapor partial pressure is 8.0×10 ^-4 Pa or less, and the hydrogen partial pressure is 5.0×10 ^-5 Pa Hereinafter, the vacuum evacuation step is the vacuum evacuation step in the vacuum chamber where the titanium target and the base material are arranged, and the rare gas is introduced so that the total pressure in the vacuum chamber is maintained within the range of 0.2Pa to 0.5Pa. A film-forming step of each layer of the first and second titanium layers by applying a specific electric power to the target and forming a film at a film-forming speed in the range of 3 nm/sec to 5 nm/sec. The method for producing a laminated structure according to claim 3, in the second step, further comprising: introducing the total pressure in the vacuum chamber in which the aluminum target and the substrate are arranged so that the total pressure is maintained within a range of 0.2 Pa to 0.5 Pa A rare gas is a film-forming step of forming an aluminum layer at a film-forming rate within a range of 7 nm/sec to 10 nm/sec by applying a specific electric power to an aluminum target.

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