KR20220137754A - 연마 조성물 및 이의 사용 방법 - Google Patents

연마 조성물 및 이의 사용 방법 Download PDF

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Publication number
KR20220137754A
KR20220137754A KR1020227031237A KR20227031237A KR20220137754A KR 20220137754 A KR20220137754 A KR 20220137754A KR 1020227031237 A KR1020227031237 A KR 1020227031237A KR 20227031237 A KR20227031237 A KR 20227031237A KR 20220137754 A KR20220137754 A KR 20220137754A
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KR
South Korea
Prior art keywords
acid
weight
composition
ammonium
hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227031237A
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English (en)
Korean (ko)
Inventor
팅-카이 황
타웨이 린
빈 후
리칭 웬
얀난 량
Original Assignee
후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. filed Critical 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Publication of KR20220137754A publication Critical patent/KR20220137754A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • H01L21/30625—
    • H01L21/308—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020227031237A 2020-02-13 2021-02-08 연마 조성물 및 이의 사용 방법 Pending KR20220137754A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062975829P 2020-02-13 2020-02-13
US62/975,829 2020-02-13
PCT/US2021/017049 WO2021162978A1 (en) 2020-02-13 2021-02-08 Polishing compositions and methods of use thereof

Publications (1)

Publication Number Publication Date
KR20220137754A true KR20220137754A (ko) 2022-10-12

Family

ID=77273440

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227031237A Pending KR20220137754A (ko) 2020-02-13 2021-02-08 연마 조성물 및 이의 사용 방법

Country Status (7)

Country Link
US (2) US12371589B2 (enExample)
EP (1) EP4103662A4 (enExample)
JP (2) JP7715720B2 (enExample)
KR (1) KR20220137754A (enExample)
CN (1) CN114945648B (enExample)
TW (1) TWI912280B (enExample)
WO (1) WO2021162978A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11508585B2 (en) * 2020-06-15 2022-11-22 Taiwan Semiconductor Manufacturing Company Ltd. Methods for chemical mechanical polishing and forming interconnect structure
TWI804925B (zh) * 2020-07-20 2023-06-11 美商Ｃｍｃ材料股份有限公司 矽晶圓拋光組合物及方法
US20230052829A1 (en) * 2021-08-05 2023-02-16 Fujifilm Electronic Materials U.S.A., Inc. Compositions and methods of use thereof
US11820919B2 (en) * 2021-10-19 2023-11-21 Tokyo Electron Limited Ruthenium CMP chemistry based on halogenation
US20230135325A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
US20230348754A1 (en) * 2022-03-31 2023-11-02 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
EP4562104A4 (en) * 2022-07-26 2025-11-19 Fujifilm Electronic Mat Usa Inc COMPOSITIONS AND THEIR METHODS OF USE
TW202428806A (zh) * 2022-11-29 2024-07-16 美商富士軟片電子材料美國股份有限公司 拋光組成物及其使用方法
KR20250150100A (ko) * 2023-02-17 2025-10-17 버슘머트리얼즈 유에스, 엘엘씨 얕은 트렌치 절연을 위한 화학적 기계적 평탄화
CN120041101B (zh) * 2025-02-20 2025-09-23 中国矿业大学(北京) 一种用于芯片高k介质金属栅钌栅平坦化的抛光液及其制备方法与应用

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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US6936543B2 (en) 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
US20100096584A1 (en) 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
JP2013533614A (ja) 2010-06-01 2013-08-22 アプライド マテリアルズ インコーポレイテッド 銅ウエハ研磨の化学的平坦化
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
US8545715B1 (en) * 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
DE112013005264T5 (de) * 2012-11-02 2015-09-24 Fujimi Incorporated Polierzusammensetzung
KR20160002729A (ko) 2013-04-25 2016-01-08 히타치가세이가부시끼가이샤 Cmp용 연마액 및 이것을 사용한 연마 방법
KR20160002728A (ko) 2013-04-25 2016-01-08 히타치가세이가부시끼가이샤 Cmp용 연마액 및 이것을 사용한 연마 방법
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
US9481811B2 (en) * 2015-02-20 2016-11-01 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced edge roll-off
US11046869B2 (en) * 2015-09-09 2021-06-29 Showa Denko Materials Co., Ltd. Polishing liquid, polishing liquid set, and substrate polishing method
JP6978933B2 (ja) * 2017-12-27 2021-12-08 ニッタ・デュポン株式会社 研磨用組成物
JP6962247B2 (ja) * 2018-03-14 2021-11-05 Jsr株式会社 半導体表面処理用組成物および半導体表面処理方法
WO2019190730A2 (en) 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Barrier ruthenium chemical mechanical polishing slurry
WO2019190738A1 (en) 2018-03-28 2019-10-03 Fujifilm Electronic Materials U.S.A., Inc. Bulk ruthenium chemical mechanical polishing composition
US10847410B2 (en) * 2018-09-13 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Ruthenium-containing semiconductor structure and method of manufacturing the same
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
KR102952447B1 (ko) 2019-09-24 2026-04-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
KR20220083728A (ko) 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
CN114945649B (zh) * 2020-02-13 2024-05-07 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
TW202138505A (zh) * 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
US20230135325A1 (en) * 2021-10-28 2023-05-04 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
US20230348754A1 (en) * 2022-03-31 2023-11-02 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof

Also Published As

Publication number Publication date
TWI912280B (zh) 2026-01-21
US20210253904A1 (en) 2021-08-19
JP2025143522A (ja) 2025-10-01
US12371589B2 (en) 2025-07-29
EP4103662A1 (en) 2022-12-21
JP2023514586A (ja) 2023-04-06
US20250333622A1 (en) 2025-10-30
CN114945648B (zh) 2025-06-20
EP4103662A4 (en) 2023-08-16
CN114945648A (zh) 2022-08-26
WO2021162978A1 (en) 2021-08-19
TW202138502A (zh) 2021-10-16
JP7715720B2 (ja) 2025-07-30

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