KR20220120675A - Plasma generator and substrate processing device - Google Patents

Abstract

The plasma generating device includes an electrode group and a dielectric. The dielectric has a first main surface and a second main surface opposite to the first main surface. The electrode group is sealed by a dielectric and includes at least one first electrode and at least one second electrode alternately arranged in an arrangement plane parallel to the first main surface, the first electrode 21a An electric field generated by application of a high-frequency voltage between the and the second electrode 21b is made to act outside the first main surface 3a.

Description

Plasma generator and substrate processing device

This application relates to a plasma generating apparatus and a substrate processing apparatus.

Conventionally, a technique has been proposed in which an electric field is generated around the electrode by applying a high-frequency voltage between a pair of electrodes, and a gas is converted into a plasma by the electric field (for example, Patent Document 1).

In Patent Document 1, the plasma generator includes a first electrode, a plurality of second electrodes, an insulator, and an insulating layer. The insulator has a rectangular parallelepiped shape. The first electrode is embedded in the insulator. The first electrode has a flat plate shape and is embedded in the insulator in a posture parallel to one main surface of the insulator. The plurality of second electrodes are arranged on the one main surface of the insulator at a distance from each other. In this structure, each of the second electrodes faces the first electrode in an opposite direction perpendicular to one main surface of the insulator. The insulating layer is provided on the one main surface of the insulator and covers the plurality of second electrodes. When the insulator and the insulating layer are regarded as an integral insulating part, the first electrode and the second electrode are embedded in the insulating part.

One main surface of the insulating layer is in close contact with the insulator and the second electrode. The main surface of the other side of the insulating layer faces the substrate. Hereinafter, this other main surface is also called a plasma generating surface. The plasma generating surface is parallel to the first electrode. In other words, the plasma generating surface is orthogonal to the opposite direction in which the first electrode and each second electrode face each other.

A high-frequency voltage is applied to the first electrode and the second electrode. By application of the voltage, an electric field is generated around the first electrode and the second electrode. The electric field is strongly generated between the first electrode and the second electrode, but is also generated around the first electrode and the second electrode. Since the electric field is generated outside the plasma generating surface, the electric field acts on the gas, and the gas is converted into a plasma. In this way, the plasma generating device can generate plasma.

Japanese Patent Laid-Open No. 2014-222664

In the technique of Patent Document 1, the plasma generating surface is orthogonal to the opposing directions of the first electrode and the second electrode, and is located on the opposite side to the first electrode with respect to the second electrode. In this structure, the intensity of the electric field on the side of the plasma generating surface is relatively small. This is because the path of the electric force line passing through the space outside the plasma generating surface becomes longer. Specifically, the electric field of force extends from the second electrode to the opposite side to the first electrode, passes outside the plasma generating surface, and is bent in a U shape to reach the first electrode. The path of these electric field lines is long, and the intensity of the electric field on the side of the plasma generating surface is lowered. Therefore, in order to increase the intensity of the electric field on the side of the plasma generation surface, it was necessary to increase the amplitude of the high-frequency voltage between the first electrode and the second electrode. That is, a more expensive high-frequency power supply was required.

Then, this application aims at providing the plasma generating apparatus which can generate|occur|produce a plasma with a smaller voltage.

A first aspect of the plasma generating device is a plasma generating device for generating plasma, the dielectric having a first main surface and a second main surface opposite to the first main surface, and the dielectric is sealed with the dielectric. and at least one first electrode and at least one second electrode alternately arranged in an arrangement plane parallel to the first main surface, and by application of a high-frequency voltage between the first electrode and the second electrode and an electrode group for applying the generated electric field to the outside of the first main surface.

A second aspect of the plasma generating device is the plasma generating device according to the first aspect, wherein the interval between the electrode group and the first main surface is narrower than the interval between the electrode group and the second main surface.

A third aspect of the plasma generating device is the plasma generating device according to the first or second aspect, wherein the dielectric includes a first dielectric member having the first main surface and a second dielectric member having the second main surface. and a dielectric constant of the first dielectric member is lower than that of the second dielectric member.

A fourth aspect of the plasma generating device is the plasma generating device according to any one of the first to third aspects, wherein the first electrode and the second electrode have a cylindrical shape.

A first aspect of a substrate processing apparatus is a substrate processing apparatus for processing a substrate, comprising: a holding mechanism for holding the substrate; and the plasma generating apparatus according to any one of the first to fourth aspects.

A second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, comprising at least any one of sulfuric acid, sulfate, peroxosulfate and peroxosulfate on the main surface of the substrate held by the holding mechanism. and a first nozzle for supplying the processing liquid to be treated, and causing the plasma generated by the plasma generating device to act on the processing liquid.

A third aspect of the substrate processing apparatus is the substrate processing apparatus according to the first or second aspect, wherein a second nozzle for supplying a gas for plasma between the plasma generator and the substrate held by the holding mechanism is additionally provided.

According to a first aspect of the plasma generating device, the first electrode and the second electrode are arranged in an arrangement plane parallel to the first main surface. Accordingly, it is possible to relatively shorten the length of the electric force line passing through the space outside the first main surface of the dielectric by connecting the first electrode and the second electrode. Therefore, the intensity of the electric field in the space can be increased, and the gas in the space can be easily converted into a plasma. That is, even with a smaller high-frequency voltage, an electric field in the space can be generated with an appropriate intensity, and a plasma can be generated in the space.

According to the second aspect of the plasma generating device, since the gap between the first main surface of the dielectric and the electrode group is narrow, an electric field is more likely to be generated outside the first main surface, and the gas in the space outside the first main surface is converted into plasma. easy to do.

According to the third aspect of the plasma generating device, since the dielectric constant of the member between the first main surface of the dielectric and the electrode group is small, the electric field is more likely to be generated outside the first main surface, so that the gas in the space outside the first main surface is absorbed. easy to plasma.

According to the fourth aspect of the plasma generating device, the electric field of force is easily curved, and the electric field is formed widely in the space outside the first main surface. Accordingly, the lighting range of the plasma (the range in which the plasma is formed) can be widened.

According to the first aspect of the substrate processing apparatus, substrate processing using plasma can be performed with low power consumption.

According to the second aspect of the substrate processing apparatus, radicals having strong oxidizing power are generated in the processing liquid. Therefore, substrate processing using the oxidizing power of the processing liquid can be efficiently performed.

According to the 3rd aspect of a substrate processing apparatus, it is easy to generate|occur|produce a plasma.

1 is a plan view schematically showing an example of the configuration of a plasma generator.
Fig. 2 is a cross-sectional view schematically showing an example of the configuration of a plasma generating device.
3 : is sectional drawing which showed schematically an example of the structure of a plasma generating apparatus.
4 is a diagram schematically showing an example of the configuration of a plasma generating device according to a comparative example.
5 is a plan view schematically showing another example of the configuration of the plasma generator.
6 is a plan view schematically showing another example of the configuration of the electrode group.
7 is a diagram schematically showing another example of the configuration of the substrate processing system.
Fig. 8 is a plan view schematically showing an example of the configuration of the control unit.
9 is a diagram schematically showing another example of the configuration of the substrate processing apparatus.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment is described, referring an accompanying drawing. In addition, the component described in this embodiment is an illustration to the last, and is not the meaning of limiting the scope of the present disclosure only to them. In the drawings, in some cases, the dimensions and numbers of each part are exaggerated or simplified as necessary for ease of understanding.

Expressions expressing relative or absolute positional relationships (for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial", etc.) are not specifically mentioned. Unless otherwise specified, not only the positional relationship is strictly expressed, but also the state displaced relative to the angle or distance within the range in which tolerances or functions of the same degree can be obtained. Expressions indicating that they are in the same state (e.g., "same", "same", "homogeneous", etc.), unless otherwise specified, not only quantitatively and strictly express the same state, but also tolerances or functions of the same degree It is also assumed that the state in which there exists a difference in which , is obtained. Expressions representing shapes (e.g., "square shape" or "cylindrical shape", etc.), unless otherwise specified, not only represent the shape strictly geometrically, but also within the range where the same effect can be obtained, For example, it is assumed that a shape having irregularities, chamfers, or the like is also shown. Expressions of "having", "having", "having", "including" or "having" a component are not exclusive expressions excluding the existence of other components. The expression (for example, "connect") for physically coupling members to each other includes aspects in which both members are directly coupled, but also coupled via another member. The expression "at least any one of A, B and C" includes only A, only B, only C, any two of A, B and C, and all of A, B and C.

<First embodiment>

FIG. 1 is a plan view schematically showing an example of the configuration of the plasma generator 1 , and FIG. 2 is a cross-sectional view schematically showing an example of the configuration of the plasma generator 1 . 2 : has shown the I-I cross section of the plasma generating apparatus 1 of FIG. 1 and 2, the XYZ rectangular coordinate system is suitably shown. In the following, one side in the X direction is called a +X side, and the other side in the X direction is sometimes called a -X side. The same is true for the Y-axis and Z-axis.

The plasma generator 1 includes an electrode group 2 and a dielectric 3 . The electrode group 2 includes a plurality of electrodes 21 . The electrode 21 is made of, for example, a conductive material such as a metal. In the examples of FIGS. 1 and 2 , three electrodes 21 are shown as the plurality of electrodes 21 .

In the example of FIG. 1, each of the some electrode 21 has the elongate cylindrical shape of an X direction. That is, in the example of FIG. 1 , the length in the X direction of the electrode 21 is longer than the length (width) in the Y direction of the electrode 21 . In addition, the axis of the electrode 21 is parallel to the X direction. In the example of FIG. 2, the shape of the cross-section (YZ cross-section) of the electrode 21 has a circular shape. In addition, the shape of the electrode 21 is not necessarily limited to this, and can be changed suitably.

The plurality of electrodes 21 are arranged at intervals within a predetermined arrangement surface. Here, as an example, the arrangement plane is a plane parallel to the XY plane. In the example of FIG. 1 , the plurality of electrodes 21 are arranged in a row at intervals in the Y direction. That is, the plurality of electrodes 21 are arranged in parallel to each other. The distance between the electrodes 21 is set to a value such that the electric field generated around the electrodes 21 can transform the gas into a plasma, as will be described later. Hereinafter, among the three electrodes 21, the electrodes 21 on both sides may be called an electrode 21a, and the electrode 21 at the center may be called an electrode 21b. The electrodes 21a and 21b are alternately arranged in the Y direction.

In the example of FIG. 1 , the electrode 21a is extended to the +X side from the +X side end of the electrode 21b, and the electrode 21b is extended to the -X side from the -X side end of the electrode 21a. have. Accordingly, the electrodes 21a and 21b are arranged in a comb-tooth shape.

The dielectric 3 encapsulates the plurality of electrodes 21 . The dielectric 3 is made of an insulating material such as insulating resin, glass, and ceramic, for example. In the example of FIG. 2 , the dielectric 3 includes a dielectric member 31 and a dielectric member 32 . The dielectric members 31 and 32 may be made of mutually different materials, or may be made of the same material.

In the example of FIG. 1, the dielectric member 31 has a plate-shaped shape, and is arrange|positioned in the attitude|position along the Z direction with the thickness direction. For example, the dielectric member 31 has a rectangular shape when viewed along the Z direction, and one side thereof is parallel to the X direction. A plurality of electrodes 21 are provided on the main surface 31a of the dielectric member 31 . In this case, the main surface 31a can also be referred to as an arrangement surface in which the plurality of electrodes 21 are arranged. The main surface 31a on the +Z side of the dielectric member 31 is parallel to the XY plane.

The dielectric member 32 is provided on the main surface 31a of the dielectric member 31 and covers the plurality of electrodes 21 . The dielectric members 31 and 32 are both in close contact with the electrode 21 , and the dielectric 3 encapsulates the plurality of electrodes 21 . In this way, the plurality of electrodes 21 are embedded in the dielectric 3 . The main surface on the +Z side of the dielectric member 32 , that is, the main surface 3a of the dielectric member 3 is parallel to the arrangement surface of the electrode group 2 . In other words, the distance between the main surface 3a of the dielectric 3 and each electrode 21 is equal to each other.

The dielectric member 32 is formed as follows, for example. For example, it may be formed by applying a liquid curable resin on the main surface 31a of the dielectric member 31 and the plurality of electrodes 21, and curing this with heat or light. Alternatively, the dielectric member 32 may be formed of an adhesive tape (eg, Teflon (registered trademark) tape) and adhered to the main surface 31a and the electrode 21 of the dielectric member 31 .

The plurality of electrodes 21 are electrically connected to a high frequency power supply 4 provided outside the dielectric 3 . In the example of FIG. 1 , each electrode 21 is connected to the high frequency power supply 4 through the lead wiring 41 . In the example of FIG. 1 , lead wires 41a and 41b corresponding to the electrodes 21a and 21b, respectively, are shown as the lead wires 41 . The lead-out wiring 41a is connected to the electrode 21a, and is led out from the end of the dielectric 3 on the +X side. The lead-out wiring 41b is connected to the electrode 21b, and is led out from an end of the dielectric 3 on the -X side. That is, the lead wirings 41a and 41b are respectively led out from opposite ends of the dielectric 3 . The outgoing wiring 41a is connected to one output terminal 4a of the high frequency power supply 4 , and the outgoing wiring 41b is connected to the other output terminal 4b of the high frequency power supply 4 .

A part of the electrode 21 and the lead wiring 41 may be formed integrally with each other. For example, the portion on the tip side of the metal rod-shaped member may be sealed with the dielectric 3 , and the portion on the base end side may extend outward from the end of the dielectric 3 . In this case, the portion on the tip side of the rod-shaped member serves as the electrode 21 , and the portion on the proximal side of the rod-shaped member serves as a part of the lead-out wiring 41 . The outgoing wiring 41 is constituted by a conducting wire, a connector, and the like, in addition to the portion on the base end side of the rod-shaped member. The lead wiring 41 is also protected by an insulating film or the like.

The high frequency power supply 4 applies a high frequency voltage between the electrode 21a and the electrode 21b. Thereby, an electric field is generated around the electrode 21a and the electrode 21b. A part of the electric field acts on the outer side of the main surface 31a of the dielectric 3 and causes the gas to become plasma, as will be described later. In other words, the effective value and frequency of the high frequency voltage output by the high frequency power supply 4 may be, for example, a voltage of 9 kV to 15 kV and a frequency of 12 kHz to 30 kHz, and the electric field generated around the electrode 21 causes the gas to be transformed into a plasma. It is set to a value that can be adjusted. The high frequency power supply 4 may include, for example, an inverter circuit (not shown). Thereby, the effective value and frequency of the high frequency voltage applied between the electrodes 21a and 21b can be adjusted.

As illustrated in FIG. 2 , the thickness (thickness in the Z direction) of the dielectric member 32 may be smaller than the thickness of the dielectric member 31 . In other words, the distance (interval in the Z direction) D1 between the main surface 3a on the +Z side of the dielectric 3 and the electrode group 2 is equal to the main surface 3b on the -Z side of the dielectric 3 and It may be narrower than the space|interval D2 between the electrode groups 2 .

<Operation of plasma generator>

The plasma generating device 1 is disposed in a gas. In the space R1 (refer to Fig. 3) facing the main surface 3a of the dielectric 3, a gas for plasma that is easier to be converted into a plasma than the gas facing the main surface 3b on the opposite side may be introduced. As the gas which is easy to plasma, for example, a noble gas such as argon, nitrogen, or oxygen can be employed.

When the high frequency power supply 4 applies a high frequency voltage between the electrodes 21a and 21b, an electric field is generated between the electrodes 21a and 21b. 3 is a diagram schematically showing an example of electric field lines of an electric field generated between the electrodes 21a and 21b. As illustrated in FIG. 3 , the electric force line passing through the space R2 between the electrodes 21a and 21b is parallel to the Y direction, but on the +Z side and the -Z side of the space R2, the electric force line is the space ( R2) and has a curved shape that bulges on the opposite side.

As illustrated in FIG. 3 , some lines of electric force pass through the space R1 on the +Z side rather than the main surface 3a of the dielectric 3 . That is, a part of the electric field generated around the electrodes 21a and 21b acts on the space R1. In other words, the distance D1 between the main surface 3a of the dielectric 3 and the electrode group 2 is set to such a degree that the electric field acts on the space R1. When the electric field acts on the gas in the space R1, the gas is converted into a plasma.

Although the object in particular on which the plasma generated by the plasma generating apparatus 1 is made to act is not restrict|limited, For example, you may make a plasma act on a plant. Thereby, the growth of a plant can be accelerated|stimulated.

In this plasma generating apparatus 1, since the some electrode 21 is sealed with the dielectric material 3, it is not exposed to a plasma atmosphere. That is, the plurality of electrodes 21 are not exposed to the space R1 . Therefore, deterioration of the electrode 21 due to the plasma can be avoided. Therefore, the reliability of the plasma generating apparatus 1 can be improved.

In addition, in the example of FIG. 3 , the opposite direction (the Y direction in this case) of the adjacent electrodes 21 is parallel to the main surface 3a of the dielectric 3 , so the electric force line passes through the space R1 in a shorter path. pass According to this, an electric field can be generated with a relatively high intensity in the space R1.

4 : is a figure which shows an example of the structure of 1 A of plasma generators which concern on a comparative example. The plasma generating apparatus 1A includes an electrode 210a, a plurality of electrodes 210b, and a dielectric material 300 . The electrode 210a has a flat plate shape, and the thickness direction thereof is disposed in a posture along the Z direction. The main surface on the +Z side of the electrode 210a is parallel to the XY plane. The plurality of electrodes 210b is provided on the +Z side of the electrode 210a. The plurality of electrodes 210b are disposed at intervals with respect to the electrodes 210a. In the example of FIG. 4 , the plurality of electrodes 210b are arranged at intervals from each other in the XY plane. Specifically, the three electrodes 210b are arranged at intervals in the Y direction.

The dielectric 300 covers the electrodes 210a and 210b and encapsulates them. In other words, the electrodes 210a and 210b are embedded in the dielectric 300 . The gap between the main surface 300a on the +Z side of the dielectric 300 and the electrode 210b is narrow. The main surface 300a of the dielectric 300 is parallel to the XY plane.

The electrode 210a is connected to one output terminal of the high frequency power supply, and the plurality of electrodes 210b are commonly connected to the other output terminal of the high frequency power supply. When a high-frequency power source applies a high-frequency voltage between the electrodes 210a and 210b, an electric field is generated around the electrodes 210a and 210b. In Fig. 4, the electric field lines of the electric field are schematically indicated by broken lines. As illustrated in FIG. 4 , an electric force line extending from the electrode 210b to the +Z side passes through the space R100 facing the main surface 300a of the dielectric 3 . Specifically, the electric force line extends from the electrode 210b to the +Z side and passes through the space R100, bends its traveling direction into a U shape, extends to the -Z side, and passes between the adjacent electrodes 210b. The electrode 210a is reached.

Even with this plasma generator 1A, since an electric field acts on the space R100 on the +Z side of the main surface 300a of the dielectric 300, it is possible to convert the gas in the space R100 into a plasma. However, in the plasma generating device 1A, the opposing direction (Z direction) of the electrodes 210a and 210b is orthogonal to the main surface 300a of the dielectric 300 . Therefore, as shown in FIG. 4 , the electric force line passing through the space R100 once extends from the electrode 210b in the direction opposite to the electrode 210a and then reaches the electrode 210a while bending the path. . According to this, the length of the electric force line is greatly increased with respect to the distance between the electrodes 210a and 210b, and an electric field is generated in the space R100 with a relatively low intensity. In order to increase the intensity of the electric field in the space R100 in the plasma generator 1A, a high-frequency power supply capable of outputting a larger voltage is required.

In contrast, in the present embodiment, as illustrated in FIG. 3 , the opposite direction (Y direction) of the electrodes 21a and 21b is parallel to the main surface 3a of the dielectric 3 . According to this, the electric force line passing through the space R1 on the main surface 3a side of the dielectric 3 does not make a U-turn unlike in FIG. 4 . Accordingly, the length of the electric field lines in FIG. 4 is slightly larger than the distance between the electrodes 21a and 21b. Therefore, an electric field can be generated in the space R1 with high intensity, and the gas can be easily converted into a plasma in the space R1. In other words, even if the low-output and inexpensive high-frequency power supply 4 is employed, plasma can be generated in the space R1. For example, it is possible to employ an inexpensive neon transformer as the high frequency power supply 4 . Moreover, since a plasma can be generated with a low output, the power consumption of the plasma generating apparatus 1 can also be reduced.

In addition, in the above-mentioned example, the cross-sectional shape of the electrodes 21a, 21b is circular shape. Thereby, the electric field of force is easily curved, and the electric field is formed widely in the space R1. Accordingly, the lighting range of the plasma (the range in which the plasma is formed) can be widened.

In addition, although the three electrodes 21 are provided in the above-mentioned example, the number of electrodes 21 is not limited to this. 5 is a plan view schematically showing another example of the configuration of the plasma generator 1 . In the example of FIG. 5 , five electrodes 21 are shown as the plurality of electrodes 21 . The five electrodes 21 are arranged at intervals in the Y direction. The five electrodes 21 are arranged in a comb-tooth shape similarly to FIG. 1 , and the electrodes 21a and 21b are alternately arranged in the Y direction. The electrode 21a is connected to the output terminal 4a of the high frequency power supply 4 via the lead wiring 41a, and the electrode 21b is connected to the output terminal 4b of the high frequency power supply 4 via the lead wiring 41b. do.

According to this configuration, when the electrodes 21 are arranged at the same interval as in FIG. 1 , plasma can be generated in a wider space R1 . On the other hand, when the electrodes 21 are arranged at a narrower interval than in FIG. 1 , an electric field can be generated in the space R1 with a higher intensity, and the amount of plasma generation can be increased.

In addition, in the above example, the distance D1 between the main surface 3a of the dielectric 3 and the electrode group 2 is the distance D2 between the main surface 3b of the dielectric 3 and the electrode group 2 . ) narrower than Thereby, it becomes easy to generate|occur|produce an electric field in space R1 by the side of the main surface 3a, and it becomes easy to turn into plasma the gas of space R1. On the other hand, since the electric field becomes difficult to act in the space facing the main surface 3b, it is hard to generate|occur|produce a plasma in the said space. Accordingly, it is possible to reduce the possibility that the plasma acts on an unintended member.

<Permittivity>

The dielectric constant of the dielectric member 31 forming the main surface 3a may be smaller than the dielectric constant of the dielectric member 31 forming the main surface 3b. Thereby, it becomes easy to generate|occur|produce an electric field in space R1 by the side of the main surface 3a, and it becomes easy to turn into plasma the gas of space R1. On the other hand, since the electric field becomes difficult to act in the space on the side of the main surface 3b, it is hard to generate|occur|produce a plasma in the said space. Accordingly, it is possible to reduce the possibility that the plasma acts on an unintended member.

In addition, although the odd number of electrodes 21 is provided in the example of FIG. 1 and FIG. 5, even number of electrodes may be provided.

In addition, in the above-described example, the arrangement surface on which the plurality of electrodes 21 are arranged is parallel to the main surface 3a of the dielectric 3 . However, it is not necessarily limited thereto. The arrangement surface of the electrodes 21 may be inclined with respect to the main surface 3a of the dielectric 3 . In addition, the main surface 3a of the dielectric material 3 is not necessarily limited to a plane. The main surface 3a may be suitably provided with unevenness|corrugation, or the main surface 3a may be curved.

In addition, in the above-mentioned example, although the electrode 21 extends linearly in planar view (XY plane), it is not necessarily limited to this. The arrangement of the electrodes 21 on the arrangement surface can be changed as appropriate. 6 is a plan view schematically showing an example of the configuration of the electrode group 2 . In the example of FIG. 6, the two electrodes 21 are shown. Each electrode 21 extends in a spiral shape. The electrodes 21 are spaced apart from each other and extend in parallel. Thereby, a plasma can be produced|generated. Moreover, the shape of the cross-section (YZ cross-section) of the electrode 21 is not limited to a circular shape, For example, the cross-section is rectangular shape, and the long shape elongate in the X direction may be sufficient.

Alternatively, as another specific example, the plurality of electrodes 21 may have a ring-shaped or arc-shaped shape, and these may be arranged concentrically. Alternatively, the plurality of electrodes 21 may be arranged radially. Alternatively, the plurality of electrodes 21 may have a dot-like shape (eg, circular or quadrangular) and are two-dimensionally arranged within the arrangement surface.

<Second embodiment>

In 2nd Embodiment, the aspect which uses the plasma generating apparatus 1 for the process of a board|substrate is described. 7 is a plan view schematically illustrating an example of the configuration of the substrate processing system 100 . The substrate processing system 100 includes a load port LP, an indexer robot IR, a center robot CR, a control unit 90 , and at least one processing unit UT (four processing units UT in FIG. 7 ). processing unit). The plurality of processing units UT are for processing the substrate W (wafer), and at least one of them corresponds to a substrate processing apparatus 110 described later in detail. The substrate processing apparatus 110 is a single-wafer-type apparatus that can be used for substrate processing, and specifically, is a single-wafer-type apparatus that can be used for a process for removing organic matter adhering to the substrate W . This organic substance is typically a used resist film. This resist film is used, for example, as an implantation mask for an ion implantation process. The substrate processing apparatus 110 may include a chamber 111 . In that case, by controlling the atmosphere in the chamber 111, the substrate processing in a desired atmosphere can be performed.

The controller 90 may control an operation of each unit included in the substrate processing system 100 . Each of the carriers (C) is a container for accommodating the substrate (W). The load port LP is a container holding mechanism for holding the plurality of carriers C. As shown in FIG. The indexer robot IR can convey the board|substrate W between the load port LP and the board|substrate mounting part PS. The center robot CR can convey the board|substrate W to another from any one of the board|substrate mounting part PS and the at least 1 processing unit UT. With the above configuration, the indexer robot IR, the substrate placing unit PS, and the center robot CR serve as a transport mechanism for transporting the substrate W between each of the processing units UT and the load port LP. function

The unprocessed board|substrate W is taken out by the indexer robot IR from the carrier C, and is delivered to the center robot CR via the board|substrate mounting part PS. The center robot CR carries the already unprocessed substrate W into the processing unit UT. The processing unit UT performs processing on the substrate W. The processed substrate W is taken out from the processing unit UT by the center robot CR, and after passing through another processing unit UT as necessary, the indexer robot IR via the substrate mounting unit PS. may be on The indexer robot IR carries the processed board|substrate W into the carrier C. As shown in FIG. As mentioned above, the process with respect to the board|substrate W is performed.

Fig. 8 is a block diagram schematically showing an example of the configuration of the control unit 90 (Fig. 7). The control part 90 may be comprised by the general computer which has an electric circuit. Specifically, the control unit 90 includes an arithmetic processing unit 91 such as a CPU (Central Processing Unit), a non-transitory storage unit 92 such as a ROM (Read Only Memory), and a temporary storage unit 92 such as a RAM (Random Access Memory). It has a storage unit 93 , a storage device 94 , an input unit 96 , a display unit 97 , and a communication unit 98 , and a bus line 95 interconnecting them.

The storage unit 92 stores a basic program. The storage unit 93 is provided as a work area when the arithmetic processing unit 91 performs a predetermined process. The storage device 94 is constituted by a nonvolatile storage device such as a flash memory or a hard disk device. The input unit 96 is constituted by various switches or a touch panel, and receives an input setting instruction such as a processing recipe from an operator. The display unit 97 is constituted of, for example, a liquid crystal display device and a lamp, and displays various types of information under the control of the arithmetic processing unit 91 . The communication unit 98 has a data communication function via a LAN (Local Area Network) or the like. In the storage device 94 , a plurality of modes for control of each device constituting the substrate processing system 100 ( FIG. 7 ) are set in advance. When the arithmetic processing device 91 executes the processing program 94P, one of the plurality of modes is selected, and each device is controlled by the mode. In addition, the processing program 94P may be memorize|stored in the recording medium. When this recording medium is used, the processing program 94P can be installed in the control unit 90 . In addition, some or all of the functions executed by the control unit 90 do not necessarily have to be realized by software, but may be realized by hardware such as a dedicated logic circuit.

9 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 110 which is an example of the processing unit UT. The substrate processing apparatus 110 includes a chamber 111 , an adsorption holding mechanism 50 , a rotation mechanism 60 , a processing unit 80 , and a plasma generating apparatus 1 .

The adsorption holding mechanism 50 is provided in the chamber 111 . The adsorption holding mechanism 50 adsorb|sucks the back surface of the board|substrate W, and holds the board|substrate W horizontally. The "back surface" here is a surface in which a device is not formed among the main surfaces of the board|substrate W, for example. The board|substrate W is hold|maintained by the suction holding|maintenance mechanism 50 in the attitude|position which the back surface faces downward. In the example of FIG. 9, the adsorption|suction holding mechanism 50 contains the adsorption|suction member 51, and the board|substrate W is mounted on the adsorption|suction surface 51a of the adsorption|suction member 51. As shown in FIG. The adsorption|suction surface 51a of the adsorption|suction member 51 has a circular shape, for example in planar view. The diameter of the adsorption|suction surface 51a of the adsorption|suction member 11 is smaller than the diameter of the board|substrate W, for example, it is 1/4 or less of the diameter of the board|substrate W.

The adsorption port (not shown) is formed in the adsorption|suction surface 51a of the adsorption|suction member 51. As shown in FIG. A plurality of adsorption ports may be dispersedly formed on the adsorption surface 51a. An internal flow path (not shown) connected to the suction port is formed inside the suction member 51 . The internal flow path is connected to the suction mechanism 56 via the suction pipe 55 . The suction mechanism 56 includes, for example, a pump, and sucks gas from the inside of the suction pipe 55 . Thereby, gas is sucked from the adsorption port of the adsorption|suction surface 51a, and the board|substrate W is adsorbed and held by the adsorption|suction member 51. As shown in FIG. The suction mechanism 56 is controlled by the control unit 90 . In addition, the board|substrate W does not necessarily need to be hold|maintained by adsorption|suction, What is necessary is just to hold|maintain by another arbitrary method.

The rotating mechanism 60 is provided in the chamber 111 . The rotation mechanism 60 rotates the suction holding mechanism 50 (more specifically, the suction member 51) around the rotation axis Q1. Thereby, the board|substrate W adsorbed and held by the adsorption|suction holding mechanism 50 also rotates around the rotation axis line Q1. The rotation axis Q1 is an imaginary axis extending along the vertical direction through the central portion of the substrate W.

The rotating mechanism 60 includes a motor 61 . The motor 61 is connected to the suction member 51 via a shaft 62 . The shaft 62 extends along the rotation axis Q1 , and its upper end is connected to the suction member 51 . The shaft 62 is, for example, a hollow shaft having a cylindrical shape, and the suction pipe 55 is connected to the internal flow path of the suction member 51 through the hollow part of the shaft 62 .

The motor 61 is connected to the shaft 62 and rotates the shaft 62 around the rotation axis Q1. In the example of FIG. 9 , the motor 61 is provided coaxially with the shaft 62 . The shaft 62 extends upward from the motor 61 . When the motor 61 rotates the shaft 62 , the suction member 51 can be rotated around the rotation axis Q1 . The motor 61 is controlled by the control unit 90 .

The motor 61 is accommodated in the motor accommodating member 70 . The motor accommodating member 70 may protect the motor 61 from an external processing atmosphere. As a specific example, the motor 61 can be protected from the chemical liquid discharged from the nozzle 81 described later and the rinse liquid discharged from the rinse nozzle (not shown).

The processing unit 80 processes the substrate W adsorbed and held by the suction holding mechanism 50 . In the example of FIG. 9 , the processing unit 80 includes a nozzle 81 , a pipe 82 , and a valve 83 . The nozzle 81 is installed in the chamber 111 and discharges the processing liquid toward the substrate W held by the suction holding mechanism 50 . In the example of FIG. 9, the nozzle 81 is arrange|positioned above the board|substrate W, and faces the center part of the board|substrate W in a vertical direction.

The nozzle 81 is connected to the processing liquid supply source 84 through a pipe 82 . The treatment liquid supply source 84 supplies the treatment liquid to the nozzle 81 through the pipe 82 . The nozzle 81 discharges the processing liquid to the central portion of the surface of the substrate W. A valve 83 is interposed in the middle of the pipe 82 . The valve 83 switches the opening and closing of the internal flow path of the pipe 82 . The valve 83 is controlled by the controller 90 . The valve 83 may be a valve capable of adjusting the flow rate of the processing liquid flowing through the pipe 82 .

In a state in which the rotation mechanism 60 rotates the suction holding mechanism 50 and the substrate W, the valve 83 is opened, so that the nozzle 81 supplies the processing liquid to the substrate W being rotated. Accordingly, the processing liquid lands on the central portion of the upper surface of the substrate W, receives centrifugal force accompanying the rotation of the substrate W, spreads on the upper surface of the substrate W, and scatters outward from the periphery of the substrate W.

In the example of FIG. 9 , the nozzle 81 is movable between the first processing position and the second standby position by the nozzle moving mechanism 85 . The first processing position is a position at which the nozzle 81 discharges the processing liquid. In the example of FIG. 9 , the first processing position is above the substrate W and opposing the central portion of the substrate W . The first standby position is a position where the nozzle 81 does not discharge the processing liquid, for example, a position where it does not face the substrate W in the vertical direction. That is, for example, the first standby position is a position outside the periphery of the substrate W in plan view.

The nozzle moving mechanism 85 may include, for example, an arm, a support rod, and a motor which are not shown in all. The arm extends along the horizontal direction, and its tip is connected to the nozzle 81 . The proximal end of the arm is connected to the support rod. The support rod extends along the vertical direction, and the base end thereof is connected to the motor. The motor is controlled by the control unit 90 . When the motor rotates the support rod, the arm pivots about the support rod, and the nozzle 81 connected to the tip of the arm moves between the first processing position and the first standby position along the circumferential direction centering on the support rod. .

The processing unit 80 may supply a plurality of types of processing liquids to the substrate W. For example, the processing unit 80 may include a plurality of nozzles according to the type of the processing liquid. For example, a chemical liquid and a rinse liquid can be employed as the treatment liquid. As the chemical solution, for example, an acidic chemical solution can be employed. As a more specific example, at least one of sulfuric acid, sulfate, peroxosulfate, and peroxosulfate may be employed as the chemical solution. Alternatively, as the chemical solution, a chemical solution containing aqueous hydrogen peroxide may be employed. As the rinsing liquid, for example, at least one of pure water and isopropyl alcohol (IPA) can be employed.

Hereinafter, an aspect in which a nozzle for rinsing is provided in addition to the nozzle 81 will be described. Specifically, the processing unit 80 further includes, for example, a rinsing nozzle, a rinsing pipe, and a rinsing valve, all of which are not shown. The rinsing nozzle discharges the rinsing liquid toward the central portion of the substrate W held by the suction holding mechanism 50 . The rinsing liquid is a processing liquid for rinsing off the chemical liquid on the substrate W.

The rinsing nozzle is connected to a rinsing liquid supply source through a rinsing pipe. The rinsing valve is interposed in the rinsing pipe and switches the opening and closing of the internal flow path of the rinsing pipe. The rinse valve is controlled by the control unit 90 . The rinsing valve may be a valve capable of adjusting the flow rate of the rinsing liquid flowing inside the rinsing pipe. The nozzle for rinsing may be connected to the nozzle 81 . In this case, the rinsing nozzle is movable integrally with the nozzle 81 .

The processing unit 80 first supplies a chemical solution to the upper surface of the rotating substrate W. Thereby, the chemical|medical solution acts on the whole surface of the upper surface of the board|substrate W, and the process with respect to the board|substrate W is performed. For example, a removal process for removing the resist film of the substrate W with a chemical is performed.

In this process, a puddle process may be performed. In the puddle process, the processing unit 80 stops the supply of the chemical solution, and the rotation mechanism 60 reduces the rotation speed of the substrate W. The rotation mechanism 60 rotates the substrate W at a rotation speed such that the liquid film of the chemical is maintained on the upper surface of the substrate W. That is, the substrate W is rotated at a rotation speed such that the chemical hardly scatters from the periphery of the substrate W. In the puddle treatment, since the chemical liquid is not supplied, the consumption amount of the chemical liquid can be reduced. When the resist film is sufficiently removed, the rotation mechanism 60 increases the rotation speed of the substrate W again to scatter the chemical liquid on the upper surface of the substrate W from the periphery of the substrate W to the outside.

Next, the processing unit 80 supplies a rinse solution to the rotating substrate W to wash away the chemical solution remaining on the upper surface of the substrate W. In other words, the chemical solution on the upper surface of the substrate W may be replaced with a rinse solution. The rinsing liquid receives a centrifugal force accompanying the rotation of the substrate W and scatters from the periphery of the substrate W to the outside.

In the example of FIG. 9 , the substrate processing apparatus 110 further includes a guard 76 . The guard 76 has a cylindrical shape surrounding the substrate W in plan view. The guard 76 receives the processing liquid scattered from the periphery of the substrate W, and flows the processing liquid to a recovery unit (not shown). The guard 76 is movable in the vertical direction by the guard moving mechanism 77 . The guard moving mechanism 77 is a guard between an upper tooth in which the upper end of the guard 76 is positioned above the substrate W, and a lower tooth in which the upper end of the guard 76 is positioned lower than the substrate W. (76) is moved. The guard moving mechanism 77 includes, for example, a cylinder mechanism or a ball screw mechanism.

In the example of FIG. 9, the plasma generating apparatus 1 is provided in the position facing the upper surface of the board|substrate W hold|maintained by the adsorption|suction holding mechanism 50. As shown in FIG. That is, the plasma generator 1 is provided above the upper surface of the board|substrate W. As shown in FIG. Accordingly, the plasma generating device 1 faces the upper surface of the substrate W at an interval. The plasma generating apparatus 1 is arrange|positioned shifting|deviate from the nozzle 81 in planar view. That is, the plasma generating device 1 is disposed so as to avoid the space between the nozzle 81 and the substrate W. As shown in FIG. Thereby, it is possible to avoid colliding with the plasma generating device 1 of the processing liquid discharged from the nozzle 81 .

The plasma generating device 1 may also be configured to be movable by the moving mechanism 5 . The moving mechanism 5 moves the plasma generator 1 between the second processing position and the second standby position. The second processing position is a position facing the upper surface of the substrate W held by the suction holding mechanism 50 , and the second standby position is a position outside the periphery of the substrate W in plan view. The moving mechanism 5 may have the same structure as the nozzle moving mechanism 85, for example.

The plasma generating device 1 is connected to a high frequency power supply 4 disposed outside the chamber 111 . The high frequency power supply 4 is controlled by the control unit 90 . The plasma generator 1 is arranged in a posture in which the main surface 3a of the dielectric 3 faces the substrate W. As shown in FIG. Accordingly, when the high-frequency power supply 4 applies a high-frequency voltage to the electrodes 21 , the plasma generating device 1 causes the gas (eg, oxygen) between the dielectric 3 and the substrate W to become plasma.

The plasma generating device 1 may generate plasma at the second processing position in a state where the chemical liquid is present on the upper surface of the rotating substrate W. According to this, the plasma acts on the liquid film of the chemical liquid on the upper surface of the substrate W. The plasma generating device 1 is disposed in a part of the circumferential direction of the substrate W in plan view, but as the substrate W rotates, the plasma acts on the liquid film of the chemical on the substrate W over the entire circumference. . When the plasma acts on the liquid film of the chemical on the substrate W, radicals having strong oxidizing power are generated in the liquid film. Therefore, substrate processing using the oxidizing power of the chemical can be efficiently performed. Specifically, the resist film can be efficiently removed from the substrate W.

It is preferable that the chemical solution contains sulfuric acid. In this case, peroxo monosulfuric acid (caroic acid) can be produced by plasma irradiation with sulfuric acid. According to this, hydrogen peroxide solution is not required for the production of caroic acid. When the hydrogen peroxide solution is not used, the burden of the drainage treatment can be reduced or the recycling of the sulfuric acid can be facilitated. Here, when using a chemical liquid containing sulfuric acid, the concentration of sulfuric acid is preferably in the range of 94 to 98%, more preferably about 96%.

The substrate processing apparatus 110 may be provided with a gas supply unit 86 in order to adjust the gas in the chamber 111 . The gas supply unit 86 supplies a gas (eg, an inert gas such as nitrogen or rare gas, or oxygen gas) into the chamber 111 . Thereby, the atmosphere in the chamber 111 can be made close to a desired atmosphere.

Moreover, the gas supply part 86 may supply the gas (for example, inert gas or oxygen) for plasma generation to the vicinity of the plasma generating apparatus 1 . As a specific example, the gas supply unit 86 includes a nozzle (guide pipe) 87 for discharging gas into the space between the main surface 3a of the plasma generating device 1 and the substrate W . The nozzle 87 is connected to a gas source 891 through a supply pipe 88 . The gas supply source 891 supplies, for example, at least one of an inert gas such as nitrogen or a noble gas and oxygen to the supply pipe 88 as a gas for plasma. A valve 89 is installed in the supply pipe 88 to control opening and closing of the supply pipe 88 . The valve 89 is controlled by the controller 90 .

The nozzle 87 may be provided in the vicinity of the plasma generator 1 . The discharge port of the nozzle 87 may open toward the space between the plasma generating apparatus 1 and the board|substrate W. Alternatively, the nozzle 87 may be provided at a position opposite to the central portion of the substrate W, and may discharge gas toward the central portion of the substrate W. Since the gas from the said nozzle 87 spreads and flows radially outward from the center part of the board|substrate W, it also flows in the space between the plasma generating apparatus 1 and the board|substrate W. As shown in FIG. The nozzle 87 may be connected to the dielectric 3 .

As described above, the plasma generator 1 is provided in the substrate processing apparatus 110 . Accordingly, the substrate W can be processed using plasma with low power consumption. Further, according to the plasma generator 1 , the electrode 21 is sealed in the dielectric 3 . Accordingly, the dielectric 3 can protect the electrode 21 from the atmosphere in the chamber 111 . For example, since the electrode 21 may be corroded when an acidic chemical solution contacts the electrode 21, such corrosion can be avoided. Conversely, it is possible to avoid that the component eluted from the electrode 21 or the component sputtered by plasma adheres to the substrate W and contaminates the substrate W.

In the above-mentioned example, plasma is made to act on a chemical|medical solution, and the radical which has a high oxidizing power is generated. Therefore, the removal process of the resist film with respect to the board|substrate W can be performed more efficiently.

In addition, in the above-mentioned example, in the substrate processing apparatus 110, although the plasma acts on the process liquid, you may make the plasma act directly on the board|substrate W. As shown in FIG. That is, the high frequency power supply 4 may apply a high frequency voltage between the electrodes 21a and 21b in a state in which the processing liquid is not attached to the substrate W . Thereby, plasma can be made to act directly on the board|substrate W, and processes, such as surface modification (for example, hydrophilization), can be performed with respect to the board|substrate W.

As described above, the plasma generating apparatus 1 and the substrate processing apparatus 110 have been described in detail. The above description is an example in all aspects, and the plasma generating apparatus 1 and the substrate processing apparatus 110 are It is not limited thereto. It is to be understood that numerous modifications, not illustrated, may be envisioned without departing from the scope of this disclosure. Each configuration described in each of the above embodiments and each of the modifications may be appropriately combined or omitted as long as they do not contradict each other.

1 Plasma generator
2 electrode group
21 electrode
21a first electrode (electrode)
21b second electrode (electrode)
3 dielectric
31 first dielectric member (dielectric member)
32 second dielectric member (dielectric member)
110 substrate processing equipment
50 holding mechanism
81 Nozzle

Claims (7)

A plasma generating device for generating plasma, comprising:
a dielectric having a first main surface and a second main surface opposite to the first main surface;
at least one first electrode and at least one second electrode encapsulated by the dielectric and alternately arranged in an arrangement plane parallel to the first main surface, wherein the first electrode and the second electrode An electrode group for applying an electric field generated by application of a high-frequency voltage between the electrodes to the outside of the first main surface
A plasma generating device comprising a. The method according to claim 1,
The distance between the electrode group and the first main surface is narrower than the distance between the electrode group and the second main surface, the plasma generating device. The method according to claim 1 or 2,
The dielectric is
a first dielectric member having the first main surface;
a second dielectric member having the second major surface
including,
The dielectric constant of the first dielectric member is lower than the dielectric constant of the second dielectric member, plasma generating device. 4. The method according to any one of claims 1 to 3,
The first electrode and the second electrode have a cylindrical shape, a plasma generating device. A substrate processing apparatus for processing a substrate, comprising:
a holding mechanism for holding the substrate;
The plasma generating device according to any one of claims 1 to 4
A substrate processing apparatus comprising: 6. The method of claim 5,
A first nozzle for supplying a treatment solution containing at least one of sulfuric acid, sulfate, peroxosulfate and peroxosulfate to the main surface of the substrate held by the holding mechanism is further provided;
A substrate processing apparatus which causes the plasma generated by the plasma generating apparatus to act on the processing liquid. 7. The method according to claim 5 or 6,
and a second nozzle for supplying a gas for plasma between the plasma generator and the substrate held by the holding mechanism.

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