KR20220107483A - System for treating exhaust gas - Google Patents

Abstract

The present invention relates to an exhaust gas treatment system. The exhaust gas treatment system according to an embodiment of the present invention includes: a plasma generating device for generating plasma to treat exhaust gas discharged from a process chamber; and a collector for collecting powder in the exhaust gas treated in the plasma generating device, wherein at least a part of the path of the exhaust gas before being introduced into the collector after being introduced into the plasma generating device is provided in a horizontal direction.

Description

Exhaust gas treatment system {SYSTEM FOR TREATING EXHAUST GAS}

The present invention relates to an exhaust gas treatment system for treating exhaust gas discharged from a process chamber that processes substrates, and more particularly, to an exhaust gas treatment system for treating exhaust gas by generating plasma.

In order to manufacture a display or a semiconductor, processes such as deposition, ashing, etching, and cleaning often have to be performed at low pressure. In particular, among the proven techniques available for processing thin films in integrated circuit (ICs) manufacturing processes, chemical vapor deposition (CVD) is often used in commercialized processes. Atomic layer deposition (ALD), a variant of CVD, is now known as a promising superior method for achieving uniformity, excellent step coverage and cost effective scalability to increase substrate size. .

In the ALD process system, which is a new process, the amount of process gas increases as the size of the process wafer increases, and thus process byproducts also increase. The increase of these process by-products affects the operation of the pump for discharging exhaust gas from the process system, and the maintenance of the pump adversely affects the main process process.

Accordingly, there is provided an exhaust gas treatment system for treating process by-products included in the exhaust gas between the pump and the process chamber from which process wafers are processed and exhaust gas is discharged.

In general, such an exhaust gas treatment system may include a plasma generating device that treats exhaust gas discharged from a process chamber, and a collector to which a pump is connected and collects powder in the exhaust gas treated by the plasma generating device. These process chambers, plasma generators, collectors and pumps may be sequentially connected in series. In this case, in the related art, the process chamber, the plasma generating device, the collector, and the pump are sequentially arranged along the downward direction, and accordingly, a path through which the exhaust gas discharged from the process chamber passes through each device is also provided in the vertical direction. Accordingly, an installation space with a high ceiling is required in order to install a process system in which such an exhaust gas treatment system is provided.

An object of the present invention is to provide an exhaust gas treatment system for effectively removing process by-products generated in a semiconductor process or the like.

Another object of the present invention is to provide an exhaust gas treatment system capable of reducing the height of a ceiling required for an installation space.

An exhaust gas treatment system according to an embodiment of the present invention includes: a plasma generating device for generating plasma and treating the exhaust gas discharged from a process chamber; a collector for collecting powder in the exhaust gas treated by the plasma generator and a connecting pipe connecting the plasma generator and the collector so that the exhaust gas discharged from the plasma generator moves to the collector; At least a part of the path of the exhaust gas from flowing into the device before flowing into the collector is provided in a horizontal direction.

An inlet through which the exhaust gas discharged from the plasma generating device is introduced may be formed on an upper surface of the connecting pipe, and an outlet through which the exhaust gas is discharged to the collector may be formed on one side of the connecting pipe.

A partition wall extending from the inner surface of the connection pipe toward the inside is provided between the inlet and the outlet of the connection pipe, and exhaust gas can pass between one end of the partition and the inner surface of the connection pipe An opening may be formed.

A plurality of the partition walls may be arranged to be spaced apart from each other along a direction in which the inlet and the outlet are arranged.

The barrier rib may include a first barrier rib; and a second partition wall closer to the outlet than the first partition wall, wherein the first partition wall and the second partition wall extend from opposite sides of the inner surface.

One of the first partition wall and the second partition wall may extend from an upper surface of the inner surface, and the other may extend from a bottom surface of the inner surface.

The one lower end may be provided lower than the other upper end.

A plurality of the first partition wall and the second partition wall are arranged to be spaced apart from each other in a direction in which the first partition wall and the second partition wall are arranged from each other and a direction perpendicular to the vertical direction, respectively, the first partition wall and the second partition wall When the two barrier ribs are viewed along a direction in which they are arranged, a space between the first barrier ribs and a space between the second barrier ribs may be provided to be shifted from each other.

The first partition wall and the second partition wall may extend in a horizontal direction, and when viewed along a direction in which the first partition wall and the second partition wall are arranged with each other, end regions may be provided to overlap each other.

An outlet pipe connected to the inlet and extending in a direction toward the inside of the connection pipe may be provided inside the connection pipe.

The discharge pipe may become narrower toward the bottom.

The plasma generating device may include: a reactor providing a space in which a plasma channel is formed; and a transformer provided in the reactor.

a sensing unit for sensing at least one of a flow rate of gas provided in the space and electrical characteristics of the reactor; and a power supply unit connected to the transformer to apply load power to the transformer in response to the data sensed by the sensing unit.

The transformer includes a magnetic core and a primary winding coil wound around the magnetic core, and the power supply unit includes: a power generator connected to the primary winding coil; and a control unit that calculates a load power value corresponding to the sensed data from the sensing unit and controls the power generator to apply load power to the transformer in response to the calculated load power value.

The sensing unit may include a gas flow sensor for sensing the flow rate of the gas.

The sensing unit may further include an electrical characteristic detector mounted on the reactor to measure electrical characteristics of the reactor, and the electrical characteristics may be at least one of current, voltage, impedance, and power.

An inlet through which exhaust gas is introduced may be formed at one side of the reactor, and the reactor and the connection pipe may provide a reaction space in which a plasma channel is formed.

The reactor may be branched into at least two branches, and each branch may have a shape corresponding to a portion of the toroidal connected to the connecting tube.

The reactor includes an inlet through which the exhaust gas is injected and an outlet through which the exhaust gas is discharged, and the inlet and the outlet may be disposed in a vertical or horizontal direction with respect to the ground.

The reactor may be provided in a toroidal shape in which the inlet is formed on one side and the outlet is formed on the other side.

The collector includes: a housing having a collecting space in which the powder is collected; and a partition wall dividing the collection space into two or more spaces, wherein the housing has a collection inlet connected to the outlet formed on one side thereof, and a collection outlet through which the internal exhaust gas is discharged is formed on a bottom surface of the housing; The direction of the flow path formed from the collection inlet to the collection outlet may be changed at least once by the partition wall part.

The partition wall portion may be provided in a tubular shape that is connected to the collection outlet, extends into the collection space, and has an upper end higher than the collection inlet.

The collector may further include a swirl flow inducing blade extending inwardly in a curved shape surrounding the outer circumferential surface of the bulkhead from one side of the collection inlet of the inner surface of the housing.

The collector may further include a powder trap part installed on the partition wall part and filtering out powder.

The powder trap part may include a cover member that surrounds upper surfaces and side surfaces of the partition wall part and is provided to be spaced apart from the partition wall part; and powder wings provided between the outer surface of the partition wall and the inner surface of the cover member so that both sides thereof are inclined along a longitudinal direction of the partition wall portion as it goes along the outer circumferential direction of the partition wall portion.

An inlet through which the exhaust gas discharged from the plasma generator is introduced may be formed at one side of the connecting pipe, and an outlet through which the exhaust gas is discharged to the collector may be formed at a lower surface of the connecting pipe.

The connector may include: a horizontal connector having the inlet formed at one end, extending in a horizontal direction, and having a first management opening at the other end; and a vertical connector connected to the bottom surface of the horizontal connector, extending in a downward direction, and having the outlet formed at the lower end; A management door may be provided.

and an inlet pipe connected to the plasma generating device so that the exhaust gas discharged from the process chamber is moved to the plasma generating device, wherein an inlet opening through which the exhaust gas discharged from the process chamber is introduced is provided on an upper surface of the inlet pipe is formed, and an outlet opening through which exhaust gas is discharged to the plasma generating device may be formed at one side of the inlet pipe.

The inlet pipe, the outlet opening is formed at one end, extending in the horizontal direction, the other end is a horizontal inlet pipe in which a second management opening is formed; and a vertical inlet pipe connected to the upper surface of the horizontal inlet pipe, extending in the upward direction, and having the inlet opening formed at an upper end thereof, wherein the other end of the horizontal inlet pipe opens and closes the second management opening 2 management doors may be provided.

The collector may include: a housing providing a collection space for collecting the powder; a first exhaust line mounted on the housing and connected to the plasma generating device; and a second exhaust line mounted on the housing and through which exhaust gas in the collection space is discharged, wherein the first exhaust line is connected to an upper surface of the housing, and the second exhaust line is disposed on one side of the housing can be connected

The collector may further include a partition wall part dividing the collection space into two or more spaces, and the flow path formed from the first exhaust line to the second exhaust line may be changed in direction at least once or more by the partition wall part. .

The exhaust gas treatment system according to an embodiment of the present invention can effectively remove process by-products generated in a semiconductor process or the like.

In addition, the exhaust gas treatment system according to an embodiment of the present invention can reduce the height of the ceiling required for the installation space.

1 is a view schematically showing an exhaust gas treatment system 10 according to an embodiment of the present invention.
FIG. 2 is a diagram schematically illustrating an example of the plasma generating apparatus 100 shown in FIG. 1 .
3 to 5 are flowcharts illustrating a driving sequence of the plasma generating apparatus 100 of FIG. 2 .
FIG. 6 is an example of the embodiment of FIG. 3 , and a power value (traveling wave power) applied according to a flow rate of an injection gas in the plasma generating apparatus 100 according to the present invention and the plasma generating apparatus 100 according to an embodiment of the present invention is the graph shown.
FIG. 7 is a graph showing the results of testing the power stability in the case where the injection gas is varied in the plasma generating apparatus 100 of FIG. 2 .
8 is a graph schematically illustrating the state of the reactor over time in the reactor 110 and the conventional reactor of FIG. 2 and the power provided to the primary winding coil of the transformer corresponding thereto.
FIG. 9 is a perspective view illustrating another example 1100 of the plasma generating apparatus shown in FIG. 1 . 10 is a cross-sectional view taken along line A-A' of FIG. 9 .
11 is a plan view illustrating a transformer mounting region and a non-mounting region in the region in which the plasma channel 1133 shown in FIG. 10 is formed.
12 is a perspective view schematically illustrating an example of the collector 200 shown in FIG. 1 . 13 is a plan sectional view of the collector 200 of FIG. 12 .
14 is a perspective view illustrating another example 1220 of the partition wall portion shown in FIG. 12 .
15 is a side view of the partition 1220 of FIG. 14 .
16 is a diagram schematically illustrating an exhaust gas treatment system 10a according to another embodiment of the present invention.
FIG. 17 is a view showing a state in which the partition wall 1340 shown in FIG. 16 is viewed along the direction in which the inlet 310 and the outlet 320 are arranged.
18 and 19 are views illustrating other embodiments 1340a and 1340b of the partition wall shown in FIG. 16 as viewed along the direction in which the inlet 310 and the outlet 320 are arranged.
20 is a view schematically showing an exhaust gas treatment system 10b according to another embodiment of the present invention.
21 is a perspective view illustrating an example of the collector 2200 shown in FIG. 20 .

Since the present invention can have various changes and can have various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents and substitutes included in the spirit and scope of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

An embodiment of the present invention relates to an exhaust gas treatment system used in a semiconductor process or the like. The exhaust gas treatment system according to embodiments of the present invention includes a plasma generating device for generating plasma.

In embodiments of the present invention, plasma refers to a substance including a set of charged particles associated with a gas, or a state of matter. As used herein, a plasma may include ionized species such as radicals, neutrons and/or molecules bound to the ionized species. The material in the reactor provided in the plasma generating device according to each embodiment of the present invention is not limited to such a material that is solely composed of a species in a plasma state after ignition, and all are referred to as plasma.

In an embodiment of the present invention, a reactor means a container or part of a container in which gas and/or plasma are accommodated and plasma is ignited and/or maintained therein. The reactor may be combined with various other components included in the plasma generating apparatus, for example, other components such as generators and cooling components. The reactor may define channels having various shapes. For example, the channel may have a linear shape, or it may have an annular shape (to provide a toroidal plasma).

The exhaust gas treatment system may be disposed at a later stage of a process chamber for a semiconductor process. In particular, the exhaust gas treatment system according to embodiments of the present invention is used to treat exhaust gas generated during a process. The process chamber for the semiconductor process may be for performing etching, deposition, and cleaning processes of a substrate.

In embodiments of the present invention, the plasma generating apparatus refers to a plasma system, and may further include additional process components in addition to the components described herein. For example, a plasma system may include one or more reactors, power supply components, instrumentation components, control components, etc. or various other components.

1 is a view schematically showing an exhaust gas treatment system 10 according to an embodiment of the present invention.

Referring to FIG. 1 , the exhaust gas treatment system 10 may include a plasma generating device 100 , a collector 200 , and a connection pipe 300 . The plasma generating apparatus 100 processes the exhaust gas discharged from the process chamber by generating plasma. The collector 200 collects powder in the exhaust gas treated by the plasma generating device 100 . The connection pipe 300 connects the plasma generator 100 and the collector 200 so that the exhaust gas discharged from the plasma generator 100 moves to the collector 200 . At least a part of the path of the exhaust gas after flowing into the plasma generating device 100 and before flowing into the collector 200 is provided in a horizontal direction.

According to an embodiment, an inlet 310 through which the exhaust gas discharged from the plasma generating device 100 is introduced is formed on the upper surface of the connection pipe 300 . In addition, an outlet 320 through which exhaust gas is discharged to the collector 200 is formed on one side of the connection pipe 300 . Here, one side of the connector 300 refers to a side facing the horizontal direction with respect to the ground. Accordingly, according to the present embodiment, the plasma generating apparatus 100 is provided on the upper part of the connection pipe 300 , and the collector 200 may be connected to one side of the connection pipe 300 . A management opening capable of removing the powder accumulated therein and a door opening and closing the same may be provided on the other side of the connector 300 .

According to an embodiment, a discharge pipe 330 may be provided inside the connection pipe 300 . The discharge pipe 330 is connected to the inlet 310 and extends in a direction toward the inside of the connection pipe 300 . The discharge pipe 330 may be provided in a tube shape that becomes narrower toward the bottom. By providing the discharge pipe 330 , the path of plasma flowing into the connection pipe 300 is narrowly provided to increase the internal conductance and increase the flow rate of process by-products, so unlike the general outlet formed on the bottom of the connection pipe 300 , the side It is possible to secure a flow rate through which the process by-products can be discharged through the outlet 320 formed in the . Here, the conductance refers to the pressure difference between two points when a constant amount of a fluid such as gas passes through the vacuum pipe, and any two points when the gas passes through the connection pipe 300 in a certain amount. corresponds to the pressure difference between The discharge pipe 330 may or may not be selectively provided as needed.

FIG. 2 is a diagram schematically illustrating an example of the plasma generating apparatus 100 shown in FIG. 1 .

Referring to FIG. 2 , the plasma generating apparatus 100 according to an embodiment of the present invention may be provided as a TCP (transformer coupled plasma) type. For example, the plasma generating apparatus 100 according to an embodiment of the present invention detects electrical characteristics of the reactor 110 in which the plasma reaction occurs, the gas flow sensor 161 for detecting the flow rate of gas, and the reactor 110 . and an electrical characteristic detector 163 , a transformer 150 for plasma discharge of the reactor 110 , and a power supply unit 180 for applying load power to the transformer 150 .

In an embodiment of the present invention, the term “load power” means that the voltage applied to the transformer 150 is variable power that changes according to circumstances. In other words, power is not applied to the transformer 150 at a predetermined specific value, but power is changed according to a specific condition, and thus the changed power is applied to the transformer 150 . For example, in one embodiment of the present invention, the power is changed according to the load of the reactor 110 (eg, impedance, gas supply amount, gas type), in this case, the load of the reactor 110 to the transformer 150 The changed power is applied accordingly. On the contrary, when a predetermined constant power is applied regardless of the load of the reactor 110 , the power at that time is referred to as set power.

The reactor 110 is a main component of the plasma generating device 10 , and provides an internal space 130 that forms a plasma channel 133 .

The reactor 110 is provided with an empty interior so as to have an internal space 130 (hereinafter, referred to as a reactor internal space, a plasma channel space, a plasma formation space, a reaction space, etc.) forming a plasma channel. The inner space 130 has a toroidal shape at least a portion of which is rotated based on a predetermined axis.

In an embodiment of the present invention, the reactor 110 suffices to provide the inner space 130 having a toroidal shape, and the outer shape may be varied. For example, the external shape of the reactor 110 may also be provided in a toroidal shape similar to the inside, and the inside may have a toroidal space, but the external shape may have a shape consisting of a plurality of cube blocks.

In one embodiment of the present invention, the cross section of the toroidal shape of the inner space 130 is not limited thereto, but may have a different shape, such as a circle or an ellipse.

In an embodiment of the present invention, the internal space 130 of the reactor 110, that is, the plasma forming space, has a shape rotated about a predetermined axis, and the plane formed by the line connecting the center of the cross section of the toroid is the predetermined It can be parallel to a plane that intersects the axis.

In one embodiment of the present invention, the meaning that the reactor internal space 130 is toroidal means that the reactor internal space 130 has a toroidal shape, that is, a ring shape when viewed as a whole, and a part is deformed and extended in one direction It includes even a deformed shape such as having a modified shape. For example, as shown in FIG. 2 , the toroid may have a shape extending in a predetermined direction, for example, in an up/down direction.

In one embodiment of the present invention, the plasma channel 133 has a limited volume and is surrounded by the reactor 110 . The plasma channel 133 may contain gas and/or plasma and may be exchanged through one or more inlets and one or more outlets of the reactor 110 to receive or transport gaseous species and plasma species. The plasma channel 133 has a predetermined length, where the length of the plasma channel 133 means the length of a total path through which plasma may exist.

The inlet 170a is for supplying gas to the internal space 130 , and connects an external component, for example, the process chamber and/or the gas supply unit 190 and the internal space 130 of the reactor 110 . . In an embodiment of the present invention, the injection hole 170a may have branches that allow the gas to flow through flow paths in at least two directions.

The outlet 170b is spaced apart from the inlet 170a and is for discharging gas from the plasma channel forming space 130 to the outside. One end is connected to the toroid to communicate with the plasma channel forming space 130 and the other end has a predetermined diameter. and is provided in a form open to the outside.

In the drawing, the movement direction of the gas in the inlet 170a is indicated by IN, and the movement direction of the gas in the outlet 170b is indicated by OUT.

In one embodiment of the present invention, the inlet (170a) and the outlet (170b) may be disposed in various positions such as up and down, left and right, within the limit of being spaced apart from each other on the reactor 110, but in the inside of the reactor 110 It is arranged such that the flow of gas is formed in a direction from top to bottom along the direction of gravity.

Here, the reactor 110 may be of a form in which gas is injected and discharged in a vertical direction (ie, a vertical reactor) or a type in which gas is injected and discharged orthogonally to a vertical direction (ie, a horizontal type reactor). In one embodiment of the present invention, the inlet and outlet are arranged in a direction perpendicular to the ground, that is, the above-described vertical reactor corresponds to. That is, when viewed from the ground, the inlet (170a) is formed on the upper side and the outlet (170b) is formed on the lower side. Accordingly, the toroidal-shaped reactor 110 has a shape standing vertically with respect to the ground, and due to this shape, the gas injected into the inlet 170a moves to the outlet 170b approximately along the direction of gravity. moving from top to bottom.

In one embodiment of the present invention, the inlet (170a) and the outlet (170b) may be connected to other additional components constituting the plasma generating device 10, for example, one end of the inlet (170a) is a process chamber and / Alternatively, in the gas supply unit 190 , the other end of the outlet 170b may be connected to the inlet 310 of the connection pipe 300 . In addition, between the inlet (170a) and the outlet (170b) with other components, a separate connecting member for connecting the inlet (170a) and the outlet (170b) and other components (for example, referred to as an adapter) ) can be provided.

In addition, the reactor 110 may be provided with an igniter 140 for igniting the plasma discharge. In the present invention, ignition is the process responsible for the initial collapse in the gas to form a plasma. The igniter 140 may be disposed in various positions, but in an embodiment of the present invention may be disposed near the injection hole 170a.

Reactor 110 may be made of a conductive material or a non-conductive material. When the reactor 110 is made of a conductive material, it may be made of various metallic materials or coated metallic materials. The reactor 110 is, for example, aluminum, stainless (eg, SUS), a metallic material such as copper, or anodized aluminum, nickel plated aluminum, quartz (quartz), aluminum nitride (AlN) and the like.

In an embodiment of the present invention, the reactor 110 may include at least two bodies, and electrical continuity is broken between the two bodies adjacent to each other so that a part of the reactor 110 is electrically isolated, at least One insulating part 120 may be provided. The insulating part 120 is for preventing the induced current from flowing in the reactor 110 when the reactor 110 is made of a conductive material, and may be provided for electrical insulation. In addition, the insulating part 120 may be used to prevent an internal gas vortex at a portion where two adjacent bodies are connected. The reactor 110 may be assembled into several blocks based on the plurality of insulating parts 120 , and may be divided into, for example, an upper block, an intermediate block, and a lower block. More specifically, the gas introduced through the gas inlet 170a in the upper block is branched into two flow paths, the middle block is configured as a pair and is coupled to the two branched flow paths, respectively, and the two flow paths are merged in the lower block to generate gas may be discharged to the discharge unit 170b.

Alternatively, if the reactor 110 is formed solely of an insulating material, the reactor 110 may be formed without the insulating portion 120 . The reactor 110 is supplied with gas from an external component, for example, a process chamber (not shown), a gas supply unit 190 , and the like.

Components such as the process chamber and the gas supply unit 190 provide various reactive gases to the plasma channel forming space 130 in the reactor 110 .

In particular, the reactor 110 and/or the plasma generating device 10 including the same according to an embodiment of the present invention may be used to treat exhaust gas generated in a process chamber during a process. In this case, the exhaust gas generated in the process chamber may be injected into the inlet 170a, and reaction gases for decomposing the exhaust gas by reacting with the exhaust gas may be supplied from the gas supply unit 190 . These reactive gases may be provided to the inlet 170a.

The exhaust gas may include various gases depending on the process in the process chamber. The exhaust gas includes process by-products generated during the process or introduced unreacted from the process chamber during the process, and the type thereof is not limited. Process by-products contained in the exhaust gas include, for example, perfluorocompounds (PFCs), precursors (Zr-precursor, Si-precursor, Ti-precursor, Hf-precursor, etc.), TiCl ₄ , WF ₆ , SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , NF3, NH ₃ , NH ₄ Cl, TiO ₂ , WN, ZrO ₂ , TiN, and the like.

Such exhaust gas may be generated in various ways according to a process in the process chamber. For example, in the etching process, CF ₄ , SF ₆ , CHF ₃ , C2F mainly used to etch silicon oxide, silicon nitride and polycrystalline silicon. ₆ , SiF ₄ , F ₂ , HF, NF ₃ Fluorine gases such as fluorine gases may be included in the exhaust gas. In addition, chlorine-based gases such as Cl ₂ , HCl, BCl ₃ , SiCl ₄ , CCl ₄ , CHCl ₃ used to etch aluminum and silicon, and trench-etch or Cl ₂ together with Bromine gases such as HBr and Br ₂ used in the etching process of aluminum may be included in the exhaust gas. In the following chemical vapor deposition (CVD) process, silane, N ₂ and NH ₃ may be introduced into the process chamber and used. In particular, in the PECVD process, PFC or ClF ₃ is used to clean the chamber. At this time, SiF ₄ may be generated.

Here, FIG. 2 schematically illustrates that gas is supplied through the inlet 170a from the gas supply unit 190 in addition to the exhaust gas from the process chamber, but the present invention is not limited thereto, and the gas may be supplied through an additional inlet. . For example, the injection hole 170a may include an ignition gas injection hole and/or an additional gas injection hole in addition to the illustrated injection hole. That is, the gas may be injected into the reactor 110 through a path other than the illustrated inlet, such as an ignition gas inlet or an additional gas inlet. The ignition gas inlet may be installed in the igniter 140, and in this case, the ignition gas may be additionally injected through the ignition gas inlet. In addition, although not shown, the additional gas inlet may be additionally installed in the reactor 110 . A pipe for supplying gas is connected from the gas supply unit 190 to the inlet. A valve for controlling a gas supply amount may be installed in the pipe.

As described above, in the plasma generating apparatus 100 according to the present embodiment, the gas used for the process in the process chamber may be provided to the inlet. According to an embodiment of the present invention, the gas used in the process may be provided to the inlet. The type and mixing ratio of the gas to be used may be set in various ways, and accordingly, the plasma generating apparatus 100 may be driven in various modes. For example, the plasma generating apparatus 100 may be selectively driven in any one of various modes, such as when a gas of the same component is injected for each injection hole, or when a gas of the same component is injected depending on the injection hole, but only a different mixing ratio is provided. have. Here, in an embodiment of the present invention, the plasma generating apparatus 100 may be selected from among various modes and driven only in that mode, but is not limited thereto. For example, the plasma generating apparatus 100 may be used in one mode and then used in another mode.

When the plasma generating apparatus 100 selects one of the various modes, the type and mixing ratio of the gas injected into the injection hole may vary depending on the target material to be decomposed into plasma. That is, the reactive gases reacting with the exhaust gas may vary depending on the type of the exhaust gas. In particular, the reactive gas that reacts may vary depending on the type of exhaust gas, and by-products generated by the reaction with the reactive gas may vary.

The gas flow sensor 161 detects a flow rate of gas provided in the space 130 from the process chamber, the gas supply unit 190, and the like, and provides the detected flow rate data value to the control unit 183 to be described later. Here, the gas flow sensor 161 is presented as an example as sensing gas, but in an embodiment of the present invention, a sensor capable of detecting a type of gas may be further added in addition to the gas flow sensor 161 .

The gas flow sensor 161 is not particularly limited as being capable of measuring the flow rate of gas. The gas flow sensor 161 capable of measuring the flow rate may be, for example, a pressure sensor.

One or more gas flow detectors 161 may be installed in a pipe to which gas is supplied. However, the installation position of the gas flow sensor 161 is not limited thereto, and in an embodiment of the present invention, the gas flow sensor 161 may measure the flow rate of gas provided in the reactor 110 . Wherever, the inlet (170a) or outlet (170b) of the reactor 110, or other suitable places of the reactor 110 may be installed.

The transformer 150 is provided in the reactor 110 and includes a magnetic core 151 and a primary winding coil 153 wound around the magnetic core 151 . The transformer 150 provides an induced electromotive force for the generation of plasma in the plasma channel forming space 130 inside the reactor 110 .

The magnetic core 151 of the transformer 150 is disposed in the reactor 110 to link a part of the plasma discharge channel, and the primary winding coil 153 is wound on the core. In one embodiment of the present invention, the magnetic core 151 may be a ferrite core. The magnetic core 151 may be installed in the toroid between the inlet 170a and the outlet 170b. In one embodiment of the present invention, the core 151 may form a symmetrical structure that is mounted one-to-one on the right and left sides of the symmetrical structure for branching gas to both sides of the inlet 170a. However, the position of the magnetic core 151 is not limited thereto.

The power supply unit 180 is connected to the primary winding coil 153 through a wiring 181 .

In an embodiment of the present invention, the degree of plasma reaction varies depending on the gas flow rate and/or the type of gas provided to the reactor 110 , and as a result, electrical properties inside the reactor may vary, and these electrical properties can be measured to calculate a load power value based on the electrical characteristic value. The above-described electrical characteristic detector 163 is for measuring electrical characteristics in the reactor 110 .

Electrical characteristic values that can be measured by the electrical characteristic detector 163 may include current, voltage, impedance, power, and the like. The electrical characteristic detector 163 is for measuring the electrical characteristic value, and various types such as a current probe, a power detector, an optical detector, a current transformer (CT), and a potential transformer (PT) may be employed. For example, when measuring the current using CT, the current induced by surrounding a part of the reactor 110 is measured, and when measuring the voltage using PT, the voltage between the insulation sections of the reactor 110 is measured. measure In particular, in an embodiment of the present invention, since the specific resistance may change depending on the gas flow rate and/or the type of gas provided to the reactor 110, the impedance inside the reactor 110 may vary, and the impedance value is measured. Accordingly, the load power value or the increase amount of the load power value may be calculated based on the value. Impedance is the ratio of alternating voltage and current of a given structure in an AC circuit having a frequency, and indicates the degree to which the wave propagates in a certain medium or the flow of electricity in a certain conductor or circuit is interrupted. The impedance may be derived by measuring the voltage and current values between the insulation sections of the reactor 110 and calculating the active power.

The power supply unit 180 includes a power generator 182 that generates power, and a controller 183 that drives and controls the power generator 182 .

The power generator 182 is connected to the primary winding coil 153 of the transformer 150 to provide load power to the transformer 150 .

The controller 183 controls to apply the load power in response to the data value sensed from the gas flow sensor 161 and/or the electrical characteristic detector 163 . In detail, the control unit 183 receives data from the gas flow sensor 161 and/or the electrical characteristic detector 163 , calculates a load power value based on the received data, and the power generator 182 uses the transformer A load power corresponding to the calculated load power value (or an increase in load power) is applied to 150 to drive the primary winding coil 153 .

In addition to the above-described configuration, the plasma apparatus 100 according to an embodiment of the present invention includes a power sensor for detecting whether the power provided from the power generator 182 is abnormal, a temperature sensor for detecting the temperature of the reactor, and a plasma generating device. It may include a cooling unit for controlling the temperature, a display unit for displaying information in order to transmit various information to the user, and the like. A power sensing unit, a temperature sensing unit, a cooling unit, a display unit, etc. may be connected to the control unit 183 , and the control unit 183 controls the plasma generating apparatus 100 by transmitting or receiving information with each component. can do.

When the power provided from the power generator 182 is greater or less than a set value, the power sensor detects whether ignition succeeds or fails, plasma on/off, and plasma preparation state, and provides such data to the controller 183 . The control unit 182 may receive such data and provide an alarm for displaying related contents to the user through the display unit.

The temperature sensor for sensing the temperature of the reactor 110 detects whether the temperature of the reactor is within a predetermined temperature range. That is, it is sensed whether the temperature of the reactor 110 is overheated too high or is low enough to affect plasma discharge. For example, the temperature sensor may determine that the reactor is overheated when the temperature at the upper part of the reactor is 200 degrees or more or the temperature at the bottom of the reactor is 300 degrees or more.

The cooling unit is provided adjacent to the reactor 110 or the power generator 182 to control the temperature of the reactor 110 in a predetermined range, or is provided adjacent to the insulating unit 120 to the temperature of the sealing member in the insulating unit 120 . It is possible to prevent damage to the sealing member by lowering the The cooling unit may include a cooling pipe, a cooling fluid provided in the cooling pipe, and a cooling fluid inlet and a cooling fluid outlet for providing the cooling fluid in the cooling pipe or discharging the cooling fluid from the cooling pipe. The cooling pipe may be provided in various numbers at various locations to lower the temperature of the reactor 110 . In an embodiment of the present invention, the cooling fluid is provided at a low temperature and is not particularly limited as a fluid capable of absorbing heat in an adjacent area, and may be, for example, a fluid such as water, a refrigerant, or exhaust gas. . In addition, in an embodiment of the present invention, the cooling unit may further include a cooling unit measuring sensor for detecting whether the cooling fluid flows, a flow rate, a temperature of the cooling fluid, and the like. These cooling unit measurement detectors may check whether the cooling fluid provided to the reactor 110 or the power generator 182 is leaking. For example, when the flow rate of the cooling fluid flowing through the reactor 110 or the power generator 182 is sensed and the flow rate is less than a set value, it may be determined that the cooling fluid has leaked.

The plasma generating apparatus 100 according to an embodiment of the present invention having the above-described configuration can stably drive the plasma compared to the existing invention, which will be described as follows.

According to an embodiment of the present invention, the power generator stably drives the plasma by applying load power to the primary winding coil without a -matcher for separate impedance matching. That is, the power generator of the present invention is directly connected to the primary winding coil to apply load power.

In detail, the control unit 183 receives the gas flow data from the gas flow sensor 161 and/or the impedance data from the electrical characteristic sensor 163, and determines a load power value based on the gas flow data and/or the impedance data. calculated, and the calculated load power is applied to the primary winding coil 153 . Accordingly, the applied power value is changed according to a change in the gas flow rate, or the applied power value is changed according to the impedance change. When the primary winding coil 153 is driven, the plasma discharge channel inside the reactor 110 functions as a secondary winding so that plasma can be stably discharged to a desired degree in the plasma channel forming space 130 .

Here, the applied load power may be additionally applied to the extent of compensating for the reduced value when the measured voltage shows a reduced value compared to the initial input voltage, that is, the initial voltage when there is no reflection (loss). . Alternatively, the reduced power value can be compensated by calculating the active power according to the input voltage. After calculating the input power and calculating the reflected power in the reactor 110, the input power is additionally compensated by the reflected power Thus, power may be applied to the reactor 110 . In other words, the load power compensation value for compensating for the difference between the predetermined value and the sensed value may correspond to a difference between the initial input voltage and the actual input voltage calculated from the reflected wave.

In one embodiment of the present invention, the load power value to be compensated finally applied to the reactor 110 according to the gas flow data from the gas flow sensor 161 and/or the impedance data from the electrical characteristic sensor 163 is a line can be decided. For example, when the gas flow data from the gas flow sensor 161 and/or the impedance data from the electrical characteristic sensor 163 have a certain value, load power values corresponding thereto are sequentially checked, and then the gas flow rate based on this A relational expression between impedance data and load power may be derived as a function from the data and/or electrical characteristic detector 163 . Alternatively, the gas flow data from the specific gas flow sensor 161 and/or the load power value corresponding to the impedance data value from the electrical characteristic sensor 163 may be specified according to a range and stored in the form of a lookup table.

When the reactor 110 according to an embodiment of the present invention is provided vertically with respect to the ground as described above, the accumulation of foreign substances such as powder in the internal space 130 is less than when provided horizontally with respect to the ground. decreases significantly. Accordingly, the conductance inside the reactor 110 is significantly more advantageous than that provided in a horizontal type. In addition, in the case of the horizontal type, the internal space of the reactor 110 may be narrowed due to the deposition of foreign substances, and thus the internal pressure may be increased. It has the effect that internal pressure rise is also prevented.

Moreover, when the foreign material is stacked, if the foreign material is continuously stacked, the speed of the gas may change rapidly, and a reflected wave may be generated from the inside. The reflected wave generated in this way not only interferes with the formation of a stable plasma, but also has a possibility of turning off the plasma discharge if it is out of the matching range.

According to an embodiment of the present invention, the reactor 110 of the present invention is provided in a vertical type, in the case of a vertical reactor, since the reaction time is shorter than that of a horizontal type reactor, the reaction efficiency of plasma in the reactor 110 When this is low, the decomposition rate of exhaust gas and the like may be reduced, and thus, in the case of the vertical type, 2 to 4 times more power may be applied to the reactor 110 than that of the horizontal type.

At this time, when the amount of gas supplied into the reactor 110 is increased, the power is also proportionally increased in response thereto, so that the decomposition rate of the internal reaction gas is also increased by the high power. In particular, by performing reflected wave compensation using impedance, the plasma state is stably maintained even when the gas supply amount is rapidly changed and a sudden turn-off phenomenon is prevented.

In particular, in the case of driving a plasma device using a preset power value (set power) as in the existing invention, the probability of exceeding the matching range according to the layering of powder increases, and as the plasma gradually weakens, the decomposition efficiency of exhaust gas, etc. This can be lowered. When the decomposition efficiency of the exhaust gas or the like is lowered, the deposition of foreign substances is further deepened and a vicious cycle may occur.

When the flow path is narrowed due to the accumulation of foreign substances such as powder in the reactor 110 , the impedance inside the reactor increases and the reflected wave also increases. This means that the reaction efficiency of the exhaust gas is reduced.

In an embodiment of the present invention, by using the reactor 110 in a vertical type, the stacking of foreign substances is minimized, and even when the foreign substances are accumulated in the reactor, active power can be applied. According to an embodiment of the present invention, it is possible to recover the reaction efficiency of exhaust gas by measuring impedance, reflected wave, and/or active power corresponding thereto, and compensating for power by a time difference based on the measured data. In other words, even if foreign substances are accumulated inside the reactor 110 and the movement of gas is delayed, after checking the internal reflected wave and the like through the flow rate and/or internal impedance measurement of the gas of the reactor 110, the corresponding load power is set to 1 By applying the application to the secondary winding coil 153, the plasma is stably driven even in a situation in which the amount of gas rapidly changes.

3 to 5 are flowcharts illustrating a driving sequence of the plasma generating apparatus 100 of FIG. 2 .

Referring to FIG. 3 , the plasma generating apparatus 100 according to an embodiment of the present invention pre-determines a load power value according to the flow rate of the gas provided to the reactor 110 according to the gas supply amount (S11), Next, the plasma is ignited using the igniter 140 of the plasma generating device 100 to start operation (S13), and the flow rate of gases such as exhaust gas provided to the plasma during plasma operation is continuously checked (S15), and then , it can be driven by a method of applying (S17) the load power pre-determined in the previous step to the primary winding coil 153 of the transformer 150 according to the confirmed gas supply amount.

Alternatively, referring to FIG. 4 , in the plasma generating apparatus 100 according to an embodiment of the present invention, a load power value according to the electrical characteristics of the reactor 110 is pre-determined ( S21 ), and then the plasma generating apparatus ( 100) by using the igniter 140 to ignite the plasma to start the operation (S23), and to detect the electrical characteristics of the reactor 110 during plasma operation (S25), and then to pre-determine the load based on the sensed electrical characteristics. It may be driven by applying power to the primary winding coil 153 of the transformer 150 ( S27 ).

Alternatively, referring to FIG. 5 , in the plasma generating apparatus 100 according to an embodiment of the present invention, the flow rate of gas provided to the reactor 110 from the process chamber, the gas supply unit 190 , and the like and the flow rate of the reactor 110 . The load power value according to the data value of the electrical characteristic is pre-determined (S31), and then the plasma is ignited using the igniter 140 of the plasma generating device 100 to start the operation (S33), and the reactor when the plasma is operated After sensing (S35) the flow rate of the gas provided to the 110 and the electrical characteristics of the reactor 110, the load power pre-determined based on the sensed gas flow rate and electrical characteristics is applied to the primary winding coil of the transformer 150 ( 150) and may be driven by a method of applying (S37). Here, the sensed electrical characteristics may be various, and in an embodiment of the present invention may be impedance.

As described above, according to an embodiment of the present invention, load power may be applied using any one or both data values of a flow rate of gas provided to the reactor 110 and data values of electrical characteristics of the reactor 110 . have.

FIG. 6 is an example of the embodiment of FIG. 3 , showing a power value (traveling wave power) applied according to a flow rate of an injection gas in the plasma generating apparatus 100 according to the existing invention and the plasma generating apparatus 100 according to an embodiment of the present invention is the graph shown. 6 , the power value of the plasma apparatus according to the present invention is indicated by REF, and the power value of the plasma apparatus according to the embodiment of the present invention is indicated by FWD. The gas used was nitrogen (N2), and the unit was LPM (Litter per Minute).

Referring to FIG. 6 , the plasma generating apparatus according to the present invention exhibits a substantially fixed power value regardless of the amount of the injected gas. In contrast, in the plasma generating apparatus 100 according to the present invention, it can be confirmed that the power value increases as the flow rate of the injected gas increases. In an embodiment of the present invention, the flow rate of the injected gas and the applied power value may be linearly proportional as shown, and the slope may vary depending on the reactor 110 to be injected, the type of gas, and the like. For example, when the nitrogen gas increases by 10LPM, the power may increase from 2500W to 3500W, and when the nitrogen gas increases from 10 to 20 LPM, the power may increase from 5000W to about 8000W. In this case, the injected gas amount and the applied power value have a linear correlation, and may be, for example, 3000W per LPM.

FIG. 7 is a graph showing the results of testing the power stability in the case where the injection gas is varied in the plasma generating apparatus 100 of FIG. 2 . In FIG. 7 , the power value when nitrogen was used as a gas and the injection amount was changed from 10000 sccm (standard cubic centimeter per minute) to 40000 sccm is shown.

Referring to FIG. 7 , according to an embodiment of the present invention, power is also provided at a different value as the pressure inside the reactor 110 changes as the amount of gas injected changes, so that it can be confirmed that the power is stably maintained. .

8 is a graph schematically illustrating the state of the reactor over time in the reactor 110 and the conventional reactor of FIG. 2 and the power provided to the primary winding coil of the transformer corresponding thereto. Here, in the case of the conventional invention, when set power is applied, C is indicated as a reactor, and the reactor 110 according to an embodiment of the present invention is indicated as P as a reactor when load power is applied. Here, the two reactors correspond to the case where they were driven under the same conditions except for the applied power.

Referring to FIG. 8 , in the case of the reactor according to the existing invention, the power value is maintained constant regardless of the lapse of time. However, as time passes, foreign substances such as powder are continuously accumulated therein, and accordingly, plasma reaction is reduced, and thus the decomposition efficiency of exhaust gas is inevitably reduced.

In contrast, in the case of the reactor 110 according to an embodiment of the present invention, even if foreign substances such as powder according to the plasma reaction increase, the power is increased correspondingly, so there is little decrease in the decomposition efficiency. Accordingly, the accumulation of foreign substances such as powder inside is much less than that of the conventional invention. In addition, even if the foreign material is accumulated, the accumulation time of the foreign material to a certain extent is significantly delayed compared to the conventional invention.

In this regard, when the load power is applied to the reactor according to an embodiment of the present invention, regardless of whether the reactor is vertical or horizontal, better decomposition efficiency and longer operation time than when the set power is applied to the reactor guarantee However, when the load power is applied in the same manner, the vertical type shows more improved decomposition efficiency and longer operation time than the horizontal type has been described above.

Alternatively, various types of the plasma generating apparatus 100 may be used in addition to the TCP type, for example, a CCP (Capacitively Coupled Plasma) type or ICP (Inductively Coupled Plasma) type apparatus may be used. In addition, as described above, the reactor 110 is provided in a toroidal shape, and the configuration for plasma discharge of the reactor 110 may be provided differently from the embodiment of FIG. 2 .

FIG. 9 is a perspective view illustrating another example 1100 of the plasma generating apparatus shown in FIG. 1 . 10 is a cross-sectional view taken along line A-A' of FIG. 9 .

9 and 10 , the plasma generating device 1100 may include a reactor 1110 providing an internal space forming a plasma channel 1133 , a transformer 1150 , and a power supply unit 1180 . have.

The reactor 1110 has a shape corresponding to a part of the toroid and is provided with a space 1130 in which the plasma channel 1133 is formed (hereinafter referred to as a reactor interior space, plasma channel space, reaction space, etc.) . A plasma channel 1133 is formed in the reactor 1110 to flow plasma. Plasma channel 1133 may contain gas and/or plasma, and may be exchanged through one or more inlets and one or more outlets of the reactor to receive or transport gaseous species and plasma species. The plasma channel 1133 has a predetermined length, where the length of the plasma channel 1133 means the length of a total path through which plasma may exist. In the drawing, a point having the highest plasma concentration on the cross-section of the region where the plasma channel 1133 is formed is indicated in the form of a connecting line.

In an embodiment of the present invention, the plasma generating device 1100 may include means for applying a DC or AC electric field to the channel, and may maintain plasma in the plasma channel 1133 using the electric field, and only The plasma in the plasma channel 1133 may be ignited by a furnace or in cooperation with other means.

The gas inlet 1170 is for supplying the exhaust gas generated from the process chamber to the plasma channel forming space 1130, and has one end open to the outside and the other end connected to the toroid to communicate with the plasma channel forming space 1130. It is provided in a form having an opening having a predetermined diameter.

The reactor 1110 may be branched into at least two branches based on an area in which the gas inlet 1170 is installed. For example, the reactor 1110 may be branched into a first branch 1110a and a second branch 1110b as shown. However, the present invention is not limited thereto, and the reactor 1110 may be branched into four branches, or a different number of branches. Each branched branch is respectively connected to the connecting pipe 300 provided below. In this case, the inlet 310 of the connection pipe 300 may be provided separately for each branch. The reactor 1110 and the connection pipe 300 provide a reaction space in which the plasma channel 1133 is formed.

The at least two branches may be provided substantially symmetrical to each other with respect to a line or plane passing between the at least two branches. In an embodiment of the present invention, the first branch 1110a and the second branch 1110b may be symmetrical on both sides based on a line or a plane passing through the igniter 1140 while passing the gas inlet 1170 vertically.

In an embodiment of the present invention, the reactor 1110 may be provided integrally without being separated. However, the present invention is not limited thereto, and the reactor 1110 may be composed of at least two or more parts and may be connected to each other through welding or the like.

The reactor 1110 may be made of a conductive material. When the reactor 1110 is made of a conductive material, it may be made of various metallic materials or coated metallic materials. The reactor 1110 may be made of, for example, a metallic material such as aluminum, stainless steel, copper, or anodized aluminum, nickel-plated aluminum, or the like.

In the drawing, the direction of movement of the gas from the outside to the gas inlet 1170 is indicated by IN.

The reactor 1110 may be provided with an igniter 1140 for igniting the plasma discharge. In the present invention, ignition is the process responsible for the initial collapse in the gas to form a plasma. The igniter 1140 may be disposed in various positions, but in an embodiment of the present invention may be disposed near the gas inlet 1170 . The igniter 1140 may have an ignition gas injection hole (not shown) through which an ignition gas for plasma ignition is injected.

The transformer 1150 is installed in the reactor 1110 . The transformer 1150 provides an induced electromotive force for the generation of plasma in the plasma channel forming space inside the reactor 1110 . To this end, the transformer 1150 may include a magnetic core and a primary winding coil wound around the magnetic core. The magnetic core may be a ferrite core. The core of the transformer 1150 is disposed in the reactor 1110 to link a part of the plasma discharge channel, and a primary winding coil may be wound on the core.

A power supply unit 1180 is connected to the winding coil through a wiring 1181 . The power supply unit 1180 may include an RF generator for generating RF power and an RF matcher for impedance matching. The power supply unit 1180 is driven by supplying the power supply 1180 to the winding coil. When the primary winding coil is driven, the plasma discharge channel inside the reactor 1110 functions as a secondary winding, so that plasma can be discharged in the plasma channel formation space 1130 . In one embodiment of the present invention, the core may form a symmetrical structure that is mounted one-to-one on the right and left sides of the symmetrical structure for branching gas to both sides of the gas inlet 1170 . However, the position of the core is not limited thereto.

A connection pipe 300 is connected to the reactor 1110 . That is, the reactor 1110 may be directly connected to the connection pipe 300 without a separate block forming a toroidal shape. In addition, when the discharge pipe 330 is provided in the connection pipe 300 , as shown in FIG. 11 , the discharge pipe 330 may be connected to the reactor 1110 . The discharge pipe 330 may or may not be selectively provided as needed.

The connection pipe 300 has inlets connected to the branches of the reactor 1110, that is, the first branch 1110a and the second branch 1110b, respectively, and through the openings, the internal space of the connection pipe 300 and the reactor The inner space 1130 of the 1110 is directly connected. The branched branches are connected to the connecting pipe 300 in a non-aerated state. Here, the connection pipe 300 may be directly connected to a part of the reactor 1110 of the plasma generating device 1100 without a separate outlet in the reactor 1110 . A portion of the toroidal-shaped reactor 1110 is connected to the connecting pipe 300 so that a toroidal-shaped channel is formed by extending in the upper part of the connecting pipe 300 . In the present embodiment, since the toroidal-shaped plasma channel 1133 extends to the inside of the connection pipe 300, the internal space 1130, that is, a part of the space where the plasma channel 1133 is formed and the connection pipe ( 300) may be partially overlapped with each other.

On the other hand, when the discharge pipe 330 is provided inside the connection pipe 300, the above-described openings are formed in the discharge pipe 330, and the connection pipe 300 may be provided with an inlet to which the discharge pipe 330 is fastened. have. The internal conductance of the space in which the plasma channel 1133 belonging to the connection pipe 300 is formed may be adjusted according to the width, length, and narrowing degree of the discharge pipe 330 . Depending on the conductance, the behavior and flow rate of gas molecules at two arbitrary points change, and accordingly, the degree of plasma reaction also changes. Accordingly, it is possible to optimize the plasma channel formation and plasma reaction by providing the discharge pipe 330 having an optimized width, length, and narrowing degree.

In one embodiment of the present invention, the size of the reaction region overlapping the space in the connection pipe 300 to form a plasma channel may be set in various ways. For example, the size of the reaction region provided in the connection pipe 300 may be adjusted to be less than or equal to a predetermined size corresponding to the region in which the transformer 1150 (specifically, the core) is mounted and the region in which it is not mounted.

11 is a plan view illustrating a transformer mounting region and a non-mounting region in the region in which the plasma channel 1133 shown in FIG. 10 is formed.

Referring to FIG. 11 , the region in which the plasma channel 1133 is formed includes a magnetic core mounting region A1 of the transformer 1150 and a magnetic core non-mounting region A2 .

In one embodiment of the present invention, the length of the plasma channel 1133 of the reaction region in the connection pipe 300 is about 50% of the length of the channel of the region A1 in which the magnetic core of the transformer 1150 is mounted. It may have the following ratios. In the present embodiment, for convenience of description, the plasma channel 1133 is shown in the form of a line connecting the point having the highest plasma concentration on the cross section in the region where the plasma channel 1133 is formed. The plasma channel 1133 inside the reactor 1110 is an imaginary line connecting the point (eg, the center on the toroidal cross-section) of the reactor 1110 having the highest plasma concentration on the cross-section of the toroid, and the connecting pipe The plasma channel 1133 of the reaction region in 300 is a line connecting the plasma forming space in the reactor 1110 and the portion having the highest plasma concentration on the cross section in the connection pipe 300 .

In an embodiment of the present invention, an insulating part 1160 may be provided between the reactor 1110 and the connection pipe 300 or the discharge pipe 330 . Insulation 1160 is the reactor 1110, the connection pipe 300 and / or the discharge pipe 330 is made of a conductive material, the induced current is the reactor 1110, the connection pipe 300 and / or the discharge pipe 330. As to prevent the flow to the, it is provided for electrical insulation.

The insulating part 1160 is provided in a ring shape corresponding to a circular shape in the cross-section of the toroid. In one embodiment of the present invention, the insulating part 1160 may be provided between each branch of the reactor 1110 and the connection pipe 300 or the discharge pipe 330, but the number and mounting position may vary. For example, it may be arranged in an asymmetric shape with respect to a predetermined line or plane on the reactor 1110 . In addition, when the reactor 1110 includes a plurality of bodies, for example, two or more bodies, an insulating part 1160 may be provided between two adjacent bodies.

The reactor 1110 having the above-described structure and the plasma generating device 1100 including the reactor 1110 are formed by extending the plasma forming channel 1133 to the inside of the connection pipe 300 , and the reactor 1110 itself It is a structure directly connected to the connector 300 . Accordingly, the plasma formation channel 1133 is overlapped in the connection pipe 300, so that the reactivity of the exhaust gas by plasma is improved, as well as byproducts are discharged directly into the connection pipe 300 without being accumulated in the reactor 1110. . Accordingly, according to an embodiment of the present invention, the possibility that process by-products that are not deposited on the surface of the semiconductor substrate in the process chamber are deposited in the exhaust pipe, the inside of the vacuum pump, and other exhaust paths afterward is significantly reduced. Accordingly, not only the exhaust efficiency of the vacuum pump and the vacuuming efficiency of the process chamber are improved, but also the frequency of failure of the vacuum pump itself is reduced, thereby further extending the life of the vacuum pump. As a result, the production capacity of the process equipment and the production yield of the process are increased.

In an embodiment of the present invention, in addition to the gas inlet 1170 through which gas is injected, an additional gas inlet provided between the inlet and the connection pipe 300 may be further installed in the reactor 1110 .

12 is a perspective view schematically illustrating an example of the collector 200 shown in FIG. 1 . 13 is a plan sectional view of the collector 200 of FIG. 12 .

1, 12, and 13, the collector 200 is connected to the outlet 320 of the connection pipe 300, and collects the powder generated by the phase change of the exhaust gas reacted with the plasma.

In one embodiment of the present invention, the collector 200 may have various configurations in order to efficiently collect the powder.

An exhaust pump ( not shown) may be installed. According to an embodiment, the exhaust pump may be connected to the collection outlet 212 of the collector 200 .

The collector 200 collects foreign substances when foreign substances are formed as by-products in the form of powder as the exhaust gas is applied with plasma energy and harmful components are burned or purified due to a reaction such as oxidation.

The collector 200 includes a configuration for collecting the powder generated by the phase change of the exhaust gas reacted with the plasma. According to an embodiment, the collector 200 may include a housing 210 , a bulkhead 220 , and a swirl flow inducing blade 230 .

The housing 210 has a collecting space TA in which the powder is collected. The housing 210 is formed with a collection inlet 211 and a collection outlet 212 .

The collection inlet 211 is connected to the outlet 320 of the connection pipe 300 . Accordingly, the exhaust gas in the connection pipe 300 is introduced into the collection space TA through the collection inlet 211 . The collection inlet 211 may be formed on one side of the housing 210 . Accordingly, the collector 200 may be provided to be fastened to the surface on which the outlet 320 of the connection pipe 300 is formed.

The exhaust gas in the collection space TA is discharged through the collection outlet 212 . The collection outlet 212 may be formed on the bottom surface of the housing 210 .

A management opening capable of removing the powder accumulated therein and a door opening and closing the same may be provided on one side other than the one side where the collection inlet 211 of the housing 210 is formed.

The partition wall 220 divides the collection space TA into two or more spaces. The flow path FL formed from the collection inlet 211 to the collection outlet 212 is changed in direction at least once or more by the partition wall 220 . According to an embodiment, the partition wall 220 may be connected to the collection outlet 212 and extend into the collection space TA, and may be provided in a tubular shape with an upper end higher than the collection inlet 211 . Accordingly, the flow path FL of the exhaust gas introduced into the collection inlet 211 and discharged to the collection outlet 212 is raised by the partition wall 220 and then again through the inside of the partition wall 220 and the collection outlet 212 . ) is released as Accordingly, the direction of the flow path of the exhaust gas in the collection space TA is changed by the barrier rib 220 , and the length of the flow path is increased to increase the collection efficiency.

The swirl flow inducing blade 230 induces the exhaust gas introduced into the collection space TA to form a swirl flow. According to an embodiment, the swirl flow inducing blade 230 has a plate structure extending inward in a curved shape surrounding the outer circumferential surface of the bulkhead 220 from one side of the collection inlet 211 of the inner surface of the housing 210 . can be provided as In this way, the swirl flow inducing blade 230 induces the exhaust gas rising along the bulkhead 220 to form a swirl flow, so that the powder contained in the exhaust gas is converted into exhaust gas with higher efficiency due to the cyclone phenomenon. separated from it and accumulated in the collection space (TA).

14 is a perspective view illustrating another example 1220 of the partition wall portion shown in FIG. 12 . 15 is a side view of the partition 1220 of FIG. 14 .

14 and 15 , the collector 200 may further include a powder trap unit 1240 . The powder trap unit 1240 is installed in the partition wall unit 1220 and filters powder from the exhaust gas. According to an embodiment, the powder trap unit 1240 may include a cover member 1241 and powder wings 1242 .

The cover member 1241 surrounds an upper surface of the partition wall part 1220 and an upper portion of a side surface of the partition wall part 1220 , and is provided to be spaced apart from the partition wall part 1220 . Accordingly, the exhaust gas introduced from the collection inlet 211 flows into the partition wall 1220 through the gap between the partition wall 1220 and the cover member 1241 .

The powder wing 1242 is provided between the outer surface of the partition wall portion 1220 and the inner surface of the cover member 1241 . The powder wings 1242 are provided so that both surfaces are inclined along the longitudinal direction of the partition wall portion 1220 as it goes along the outer circumferential direction of the partition wall portion 1220 . A plurality of powder wings 1242 may be provided to be arranged to be spaced apart from each other at regular intervals along the outer circumferential direction of the partition wall portion 1220 . The number of powder wings 1242 may be selectively changed as needed. When a plurality of powder wings 1242 are provided, the powder wings may be provided to be inclined in the same direction.

As described above, by providing the powder trap unit 1240, the flow path FL formed from the collection inlet 211 to the collection outlet 212 is changed in direction by the powder trap unit 1240, and the length of the flow path is It can be increased to increase the collection efficiency.

16 is a view schematically showing an exhaust gas treatment system 10a according to another embodiment of the present invention. FIG. 17 is a view showing a state in which the partition wall 1340 shown in FIG. 16 is viewed along the direction in which the inlet 310 and the outlet 320 are arranged.

Referring to FIG. 16 , a partition wall 1340 may be provided in the connection pipe 300 of the exhaust gas treatment system 10a according to an exemplary embodiment. The partition wall 1340 may be provided between the inlet 310 and the outlet 320 of the connection pipe 300 . The partition wall 1340 is provided to extend from the inner surface of the connector pipe 300 toward the inside of the connector pipe 300 . An opening through which exhaust gas can pass is formed between one end of the partition wall 1340 and the inner surface of the connection pipe 300 .

A plurality of partition walls 1340 may be arranged to be spaced apart from each other along the direction in which the inlet 310 and the outlet 320 are arranged. According to an embodiment, the partition wall 1340 may include a first partition wall 1341 and a second partition wall 1342 . The second partition wall 1342 is provided closer to the outlet 320 than the first partition wall 1341 . The first partition wall 1341 and the second partition wall 1342 may be provided to extend from opposite sides of the inner surface of the connection pipe 300 . One of the first partition wall 1341 and the second partition wall 1342 may extend from the top surface of the inner surface of the connector 300 , and the other may extend from the bottom surface of the inner surface of the connector pipe 300 . For example, the first partition wall 1341 may extend from the bottom surface of the inner surface of the connection pipe 300 , and the second partition wall 1342 may extend from the upper surface of the inner surface of the connection pipe 300 . In this case, the one lower end may be provided lower than the other upper end. That is, when viewed along the direction in which the inlet 310 and the outlet 320 are arranged, one of the first partition wall 1341 and the second partition wall 1342 that extends from the bottom surface of the connection pipe 300 is a partial region of the upper part. It may be provided so that some regions of the lower portion of the and the connector extending from the upper surface of the pipe 300 overlap each other. In addition, each of the first and second partition walls 1341 and 1342 may have ends bent in a direction toward the inlet 310 . As shown in FIG. 17 , the first partition wall 1341 and the second partition wall 1342 may be provided in a single number, respectively, and may be provided to block the entire area of the connecting pipe 300 in the horizontal direction, respectively.

As described above, as the partition wall 1340 is provided in the connection pipe 300 , the direction of the flow path of the exhaust gas in the connection pipe 300 is changed by the partition wall 1340 , so that the powder It is possible to increase the collection efficiency.

The partition wall 1340 may be provided in the connection pipe 300 in various structures as needed.

18 and 19 are views illustrating other embodiments 1340a and 1340b of the partition wall shown in FIG. 16 as viewed along the direction in which the inlet 310 and the outlet 320 are arranged.

Referring to FIG. 18 , unlike the partition wall 1340 of FIG. 17 , a plurality of first partition walls 1341a and second partition walls 1342a are respectively arranged in a direction in which the first partition wall 1341a and the second partition wall 1342a are arranged with each other. The space between the first partition walls 1341a and the space between the first partition walls 1341a when viewed along the direction in which the first partition wall 1341a and the second partition wall 1342a are arranged are spaced apart from each other in a direction perpendicular to the vertical direction; A space between the second partition walls 1342a may be provided to be shifted from each other.

On the other hand, referring to FIG. 19 , unlike the above-described partition walls 1340 and 1340a , the first partition wall 1341b and the second partition wall 1342b extend in the horizontal direction from sides facing in opposite directions, and When viewed along a direction in which the first partition wall 1341b and the second partition wall 1342b are arranged with each other, end regions may be provided to overlap each other.

Other configurations, structures, and functions other than the partition walls 1340 , 1340a , 1340b of the exhaust gas treatment system 10a may be provided in the same or similar manner to the exhaust gas treatment system 10 of FIG. 1 .

20 is a view schematically showing an exhaust gas treatment system 10b according to another embodiment of the present invention.

Referring to FIG. 20 , the exhaust gas treatment system 10b may include a plasma generating device 2100 , a collector 2200 , a connection pipe 2300 , and an inlet pipe 2400 .

According to an embodiment, the plasma generating apparatus 2100 may be provided to have the same or similar configuration, structure, and function to the above-described plasma generating apparatuses. Accordingly, the reactor of the plasma generating device 2100 may be provided in a shape that branches into two branches from the inlet through which the gas is injected, as shown in FIG. 2 or FIG. 9 . However, in the reactor of the plasma generating apparatus 2100 according to the present embodiment, as shown in FIG. 20 , exhaust gas may be introduced and discharged in a horizontal direction. In addition, when the reactor of the plasma generating apparatus 2100 according to the present embodiment is provided in a shape that branches into two branches from the inlet, the longitudinal direction of each branch is provided in a horizontal direction, and so that they are arranged in a horizontal direction with each other. can be provided.

The collector 2200 is connected to the connection pipe 2300 and collects powder in the exhaust gas treated by the plasma generating device 2100 . The collector 2200 may be provided in various configurations and structures capable of collecting powder in the exhaust gas treated by the plasma generating device 2100 . A detailed example thereof will be described later.

The connecting pipe 2300 is connected between the plasma generating device 2100 and the collector 2200 so that the exhaust gas treated by the plasma generating device 2100 can be moved to the collector 2200 . An inlet 2301 through which the exhaust gas discharged from the plasma generating device 2100 is introduced is formed at one side of the connecting pipe 2300 , and an outlet through which the exhaust gas is discharged to the collector 2200 at the bottom of the connecting pipe 2300 . 2302 is formed. According to an embodiment, the connector 2300 may include a horizontal connector 2300 and a vertical connector 2300 .

The horizontal connector 2300 may have an inlet 2301 formed at one end, extend in a horizontal direction, and a first management opening 2311 may be formed at the other end. The powder accumulated therein may be removed through the first management opening 2311 . A first management door 2312 for opening and closing the first management opening 2311 may be provided at the other end of the horizontal connector 2300 .

The vertical connector 2300 is connected to the bottom surface of the horizontal connector 2300 . The vertical connector 2300 extends downward from the bottom surface of the horizontal connector 2300 . An outlet 2302 is formed at the lower end of the vertical connector 2300 .

The inlet pipe 2400 is connected to the plasma generating device so that the exhaust gas discharged from the process chamber moves to the plasma generating device 2100 . An inlet opening 2401 through which the exhaust gas discharged from the process chamber is introduced is formed on the upper surface of the inlet pipe 2400 . An outlet opening 2402 through which exhaust gas is discharged to the plasma generating device 2100 is formed on one side of the inlet pipe 2400 . According to an embodiment, the inlet pipe 2400 may include a horizontal inlet pipe 2400 and a vertical inlet pipe 2400 .

The horizontal inlet pipe 2400 may have an outlet opening 2402 formed at one end, extending in the horizontal direction, and a second management opening 2411 formed at the other end. Powder accumulated therein may be removed through the second management opening 2411 . A second management door 2412 for opening and closing the second management opening 2411 may be provided at the other end of the horizontal inlet pipe 2400 .

The vertical inlet pipe 2400 is connected to the upper surface of the horizontal inlet pipe 2400 . The vertical inlet pipe 2400 extends upwardly from the upper surface of the horizontal inlet pipe 2400 . An inlet opening 2401 is formed at an upper end of the vertical inlet pipe 2400 .

21 is a perspective view illustrating an example of the collector 2200 shown in FIG. 20 .

Referring to FIG. 21 , the collector 2200 according to an embodiment of the present invention includes a housing 2110 that provides a collection space TA for collecting powder, and first and second exhausts mounted on the housing 2110 . The line 2120 and 2130 and the partition wall part 2140 dividing the collection space TA into two or more spaces may be included. Here, the exhaust gas including powder moves along a flow path FL (indicated by an arrow in the drawing) formed from the first exhaust line 2120 to the second exhaust line 2130 in the housing 2110 . In an embodiment of the present invention, the movement direction of the flow path FL may be changed in the housing 2110 at least once or more.

The housing 2110 provides a collecting space TA therein. To this end, the housing 2110 may be provided in a rectangular parallelepiped shape. However, the shape of the housing 2110 is not limited thereto, and may be provided in various shapes except for cases that are not compatible with the following description.

The first exhaust line 2120 is mounted on the collector 2200 and connected to the reactor of the plasma generating device 2100 , and functions as an inlet through which gases from the reactor are introduced to the collector 2200 . The introduced gas may include a powder generated by a phase change of the exhaust gas reacting with the plasma, and the non-reacting exhaust gas. The first exhaust line 2120 may be disposed on one side of the collector 2200 , for example, an upper portion of the collector 2200 .

The second exhaust line 2130 is mounted on the collector 2200 and connected to another external configuration, for example, an exhaust pump. The second exhaust line 2130 functions as an outlet through which gases in the collector 2200 are discharged. The exhaust gas may include unreacted exhaust gases from which powder has been removed. The second exhaust line 2130 may be disposed on the other side of the housing 2110 spaced apart from the first exhaust line 2120 , for example, on one side of the housing 2110 .

The partition wall part 2140 may include a plurality of plate-shaped parts 2141 and 2142 for guiding the flow path FL of the exhaust gas.

In one embodiment of the present invention, the partition wall part 2140 separates the storage space (R1) and the connection space (R2) and effectively guides the movement of the exhaust gas, some of the plurality of plate parts (2141, 2142) may be disposed to be inclined with respect to the z-axis direction.

In an embodiment of the present invention, the partition wall portion 2140 may include first and second plate-shaped portions 2141 and 2142 . A portion of the first plate-shaped portion 2141 adjacent to the first exhaust line 2120 may extend in the z-axis direction. The remaining area of the first plate-shaped part 2141 may be provided in a direction inclined to the z-axis. The second plate-shaped part 2142 is connected to a region extending in the z-axis direction of the first plate-shaped part 2141 or an inclined region of the first plate-shaped part 2141 and is parallel to the first plate-shaped part 2141 . That is, it may be provided in a form that is erected in the vertical direction.

In one embodiment of the present invention, the width W2 of the second plate-shaped part 2142 is the first plate-shaped part ( 2141 may be formed to be smaller than the width W1. In other words, a portion in which the second plate-shaped part 2142 is not provided becomes an opening, and through this opening, the storage space R1 and the connection space R2 are connected, so that the exhaust gas can move.

In one embodiment of the present invention, the first exhaust line 2120 and the second exhaust line 2130 may be disposed in a direction perpendicular to each other, in this case, the second exhaust line 2130 is the x-axis or y It may extend in the axial direction. Here, the meaning of the mutually perpendicular directions includes not only a case in which they are completely perpendicular, but also a case in which the overall extension direction is substantially perpendicular even if there are some non-vertical portions. In one embodiment of the present invention, the second exhaust line 2130 connected to the outside may be formed above the opening connecting the storage space R1 and the connection space R2.

In the collector 2200 having the above-described structure, the flow path FL through which the exhaust gas moves is a first exhaust line 2120 , a storage space R1 , a connection space R2 , and a second exhaust line 2130 ). is formed along The flow path FL formed in the storage space R1 of the partition wall portion 2140 may be a direction in which the gas introduced from the first exhaust line 2120 descends along the z-axis when viewed as a whole. As the flow path FL is formed in the descending direction along the z-axis in this way, the powder contained in the introduced gas falls downward by gravity and is accumulated on the bottom surface of the collector 2200 . An opening is formed between the storage space R1 and the connection space R2 so that the two spaces are connected to each other, and the opening may be disposed at a lower end of the descending flow path FL. The exhaust gas descending from the storage space R1, that is, the exhaust gas from which the powder has been removed, moves to the connection space R2, and then, the second exhaust line 2130 connected to the outside is connected to the upper side of the housing 2110. Because it is formed in , it moves in an upward direction along the z-axis. The exhaust gas moving upward is discharged to the outside through the second exhaust line 2130 , for example, toward the exhaust pump.

In one embodiment of the present invention, the barrier rib portion may be variously modified from the above-described shape. For example, the plate-shaped part may be further disposed in the collection space to change the flow path of the exhaust gas in various directions.

The exhaust gas treatment system 10b according to an embodiment of the present invention provides a gas in which process by-products contained in the exhaust gas are treated after passing through the process chamber as in the above-described embodiment, and thus does not adversely affect the exhaust pump. It is possible to extend the life of the exhaust pump without

In one embodiment of the present invention, a component for increasing the collecting efficiency of the powder may be additionally installed in the collector.

As described above, in the exhaust gas treatment systems 10 , 10a , and 10b according to the embodiments of the present invention, the path of the exhaust gas after flowing into the plasma generating device before flowing into the collector is at least partially in a horizontal direction. Accordingly, by providing the two branches to be arranged in a horizontal direction in some configuration of the reactor or the like, or by providing the reactor and the collector to be arranged in a horizontal direction to each other, it is possible to reduce the height of the ceiling required for the installation space.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art or those having ordinary knowledge in the technical field will not depart from the spirit and technical scope of the present invention described in the claims to be described later. It will be understood that various modifications and variations of the present invention can be made without departing from the scope of the present invention.

Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: exhaust gas treatment system 100: plasma generating device
110: reactor 200: collector
300: connector 310: inlet
320: outlet 330: discharge pipe

Claims (18)

a plasma generator for generating plasma to treat exhaust gas discharged from the process chamber; and
Comprising a collector for collecting powder in the exhaust gas treated by the plasma generating device,
The exhaust gas treatment system in which at least a part of the path of the exhaust gas from flowing into the plasma generating device until flowing into the collector is provided in a horizontal direction. The method of claim 1,
Further comprising a connection pipe connecting the plasma generating device and the collector so that the exhaust gas discharged from the plasma generating device is moved to the collector,
The connection pipe includes an inlet through which the exhaust gas discharged from the plasma generating device is introduced; and an exhaust gas treatment system in which an outlet through which exhaust gas is discharged to the collector is formed. 3. The method of claim 2,
Between the inlet and the outlet of the connecting pipe, a partition wall extending from the inner surface of the connecting pipe toward the inside is provided,
An exhaust gas treatment system in which an opening through which exhaust gas can pass is formed between one end of the partition wall and an inner surface of the connection pipe. 3. The method of claim 2,
The exhaust gas treatment system further comprising an exhaust pipe connected to the inlet and extending in a direction toward the inside of the connection pipe. 5. The method of claim 4,
The exhaust pipe is an exhaust gas treatment system that becomes narrower toward the bottom. 3. The method of claim 2,
The plasma generating device,
a reactor providing a space in which a plasma channel is formed; and
Exhaust gas treatment system comprising a; transformer provided in the reactor. 7. The method of claim 6,
a sensing unit for sensing at least one of a flow rate of gas provided in the space and electrical characteristics of the reactor; and
and a power supply unit connected to the transformer to apply load power to the transformer in response to data sensed by the sensing unit. 7. The method of claim 6,
An inlet through which exhaust gas is introduced is formed at one side of the reactor,
and the reactor and the connection pipe provide a reaction space in which a plasma channel is formed. 9. The method of claim 8,
The reactor is branched into at least two branches and each branch has a shape corresponding to a part of a toroidal connected to the connecting pipe. 7. The method of claim 6,
The reactor includes an inlet through which the exhaust gas is injected and an outlet through which the exhaust gas is discharged,
The inlet and the outlet are disposed in a vertical or horizontal direction with respect to the ground exhaust gas treatment system. 3. The method of claim 2,
The collector,
a housing having a collecting space in which the powder is collected;
and a partition wall dividing the collection space into two or more spaces;
The housing is formed with a collecting inlet connected to the outlet on one side, and a collecting outlet through which the internal exhaust gas is discharged is formed on the bottom surface,
The flow path formed from the collection inlet to the collection outlet is changed in direction at least once or more by the partition wall part. 12. The method of claim 11,
and the partition wall portion is connected to the collection outlet, extends into the collection space, and is provided in a tubular shape with an upper end higher than the collection inlet. 13. The method of claim 12,
The collector, the exhaust gas treatment system further comprising a swirl flow inducing blade extending inwardly in a curved shape surrounding the outer circumferential surface of the bulkhead from one side of the collection inlet of the inner surface of the housing. 13. The method of claim 12,
The collector is installed in the partition wall portion, the exhaust gas treatment system further comprising a powder trap for filtering the powder. 15. The method of claim 14,
The powder trap unit,
a cover member surrounding the upper surface and the side surface of the partition wall part and provided to be spaced apart from the partition wall part; and
and powder blades provided between the outer surface of the partition wall and the inner surface of the cover member, the both surfaces of which are inclined along the longitudinal direction of the partition wall as it goes along the outer circumferential direction of the partition wall portion. 3. The method of claim 2,
The connector is
a horizontal connector having the inlet at one end, extending in a horizontal direction, and having a first management opening at the other end; and
A vertical connector connected to the bottom surface of the horizontal connector, extending in the downward direction, and having the outlet formed at the lower end; includes,
An exhaust gas treatment system in which a first management door for opening and closing the first management opening is provided at the other end of the horizontal connection pipe. 3. The method of claim 2,
Further comprising an inlet pipe connected to the plasma generating device so that the exhaust gas discharged from the process chamber is moved to the plasma generating device,
The inlet pipe may include an inlet opening through which the exhaust gas discharged from the process chamber is introduced; and an outlet opening through which exhaust gas is discharged to the plasma generating device. 18. The method of claim 17,
The inlet pipe is
a horizontal inlet pipe having the outlet opening formed at one end, extending in a horizontal direction, and having a second management opening formed at the other end; and
a vertical inlet pipe connected to the upper surface of the horizontal inlet pipe, extending in the upward direction, and having the inlet opening formed at the upper end;
An exhaust gas treatment system in which a second management door for opening and closing the second management opening is provided at the other end of the horizontal inlet pipe.

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