KR20220095940A - Semiconductor photoresist composition, and method of forming patterns using the composition - Google Patents

Abstract

Provided are: a semiconductor photoresist composition comprising an organometallic compound represented by chemical formula 1 and a solvent; and a method for forming a pattern using the same. The details of chemical formula 1 are as defined in the specification.

Description

A composition for a semiconductor photoresist, and a pattern formation method using the same

The present disclosure relates to a composition for a semiconductor photoresist, and a pattern forming method using the same.

EUV (extreme ultraviolet light) lithography is attracting attention as one of the elemental technologies for manufacturing a next-generation semiconductor device. EUV lithography is a pattern forming technique using EUV light having a wavelength of 13.5 nm as an exposure light source. According to EUV lithography, it is demonstrated that an extremely fine pattern (for example, 20 nm or less) can be formed in the exposure step of a semiconductor device manufacturing process.

Implementation of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists that can perform at sub- 16 nm spatial resolutions. Currently, traditional chemically amplified (CA) photoresists provide for resolution, photospeed, and feature roughness, line edge roughness or LER for next-generation devices. Efforts are being made to meet specifications.

The intrinsic image blur due to acid catalyzed reactions taking place in these polymeric photoresists limits resolution at small feature sizes, which is why e-beam This is a fact that has long been known in lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but because their typical elemental makeup lowers the absorbance of photoresists at a wavelength of 13.5 nm, which in turn reduces sensitivity, may suffer more under EUV exposure.

CA photoresists may also suffer from roughness issues at small feature sizes, due in part to the nature of acid catalyzed processes, as line edge roughness (LER) decreases as photospeed decreases. has been shown to increase experimentally. Due to the drawbacks and problems of CA photoresists, there is a need in the semiconductor industry for a new type of high performance photoresists.

In order to overcome the disadvantages of the above-described chemically amplified organic photosensitive composition, an inorganic photosensitive composition has been studied. In the case of an inorganic photosensitive composition, it is mainly used for negative tone patterning that is resistant to removal by a developer composition due to chemical modification by a non-chemical amplification mechanism. In the case of inorganic compositions, they contain inorganic elements with higher EUV absorption compared to hydrocarbons, so sensitivity can be secured even with a non-chemical amplification mechanism, and it is less sensitive to the stochastic effect, so it is known that the roughness of the line edge and the number of defects are small. .

Inorganic photoresists based on tungsten and peroxopolyacids of tungsten mixed with niobium, titanium, and/or tantalum are radiation sensitive materials for patterning. for use (US5061599,; H. Okamoto, T. Iwayanagi, K. Mochiji, H. Umezaki, T. Kudo, Applied Physics Letters, 49(5), 298-300, 1986).

These materials were effective in patterning large features in a bilayer configuration with deep UV, x-ray, and electron beam sources. More recently, cationic hafnium metal oxide sulfate (HfSOx) materials with a peroxo complexing agent to image 15 nm half-pitch (HP) by projection EUV exposure. (US2011-0045406,; J. K. Stowers, A. Telecky, M. Kocsis, B. L. Clark, D. A. Keszler, A. Grenville, C. N. Anderson, P. P. Naulleau, Proc. SPIE, 7969, 796915, 2011) ). This system showed the best performance of a non-CA photoresist and had a light speed approaching the requirements for a viable EUV photoresist. However, hafnium metal oxide sulfate materials with peroxo complexing agents have several practical drawbacks. First, these materials are coated in a highly corrosive sulfuric acid/hydrogen peroxide mixture and have poor shelf-life stability. Second, it is not easy to change the structure to improve performance as a complex mixture. Third, it should be developed in an extremely high concentration of about 25 wt% TMAH (tetramethylammonium hydroxide) solution.

One embodiment provides a composition for a semiconductor photoresist having excellent etch resistance and solubility in organic solvents, and excellent sensitivity and pattern formation properties.

Another embodiment provides a pattern forming method using the composition for a semiconductor photoresist.

The composition for a semiconductor photoresist according to an embodiment includes an organometallic compound represented by the following Chemical Formula 1, and a solvent.

[Formula 1]

In Formula 1,

R ¹ To R ⁶ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, OR ^a , -OC(=O)R ^b or a combination thereof,

R ^a and R ^b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alky a nyl group or a combination thereof,

R ¹ to R ⁶ are not hydrogen at the same time.

wherein R ¹ to R ⁶ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, OR ^a and -OC(=O ) at least one selected from the group consisting of R ^b , wherein R ^a and R ^b are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, or a substituted or unsubstituted C2 to C8 alkynyl group or a combination thereof.

wherein R ¹ to R ⁶ are each independently a methyl group, an ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, t-butyl group, OR ^a and -OC ( =O) at least one selected from the group consisting of R ^b , wherein R ^a and R ^b are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted It may be a C2 to C8 alkynyl group or a combination thereof.

wherein R ^a and R ^b are each independently a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a t-butyl group, or a substituted or unsubstituted It may be a C2 to C6 alkenyl group.

Formula 1 may be represented by any one of Formulas 1-1 to 1-8 below.

[Formula 1-1] [Formula 1-2] [Formula 1-3]

[Formula 1-4] [Formula 1-5] [Formula 1-6]

[Formula 1-7] [Formula 1-8]

In Formulas 1-1 to 1-8,

R ¹ to R ⁵ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to a C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof;

R ^a , R ^a1 , R ^a2 , R ^a3 , R ^b , R ^b1 , R ^b2 and R ^b3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It may be an unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a combination thereof.

The composition for a semiconductor photoresist may further include an additive of a surfactant, a crosslinking agent, a leveling agent, or a combination thereof.

A pattern forming method according to another embodiment includes forming an etch target film on a substrate, applying the above-described composition for a semiconductor photoresist on the etch target film to form a photoresist film, patterning the photoresist film to form a photoresist pattern and etching the etch target layer using the photoresist pattern as an etch mask.

In the forming of the photoresist pattern, light having a wavelength of 5 nm to 150 nm may be used.

The pattern forming method may further include providing a resist underlayer formed between the substrate and the photoresist layer.

The photoresist pattern may have a width of 5 nm to 100 nm.

The composition for a semiconductor photoresist according to an embodiment has excellent etch resistance and solubility in organic solvents, and using this can provide a photoresist pattern that has excellent sensitivity and does not collapse even if it has a high aspect ratio. have.

1 to 5 are cross-sectional views for explaining a pattern forming method using a composition for a semiconductor photoresist according to an exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present description, descriptions of already known functions or configurations will be omitted in order to clarify the gist of the present description.

In order to clearly explain the present description, parts irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar elements throughout the specification. In addition, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present description is not necessarily limited to the illustrated bar.

In order to clearly express various layers and regions in the drawings, the thicknesses are enlarged. In addition, in the drawings, the thicknesses of some layers and regions are exaggerated for convenience of description. When a part, such as a layer, film, region, plate, etc., is "on" or "on" another part, it includes not only cases where it is "directly on" another part, but also cases where there is another part in between.

In the present description, "substituted" means that a hydrogen atom is deuterium, a halogen group, a hydroxyl group, an amino group, a substituted or unsubstituted C1 to C30 amine group, a nitro group, a substituted or unsubstituted C1 to C40 silyl group, a C1 to C30 alkyl group, C1 to C10 haloalkyl group, C1 to C10 alkylsilyl group, C3 to C30 cycloalkyl group, C6 to C30 aryl group, C1 to C20 alkoxy group, or cyano group. "Unsubstituted" means that a hydrogen atom remains as a hydrogen atom without being substituted with another substituent.

As used herein, the term "alkyl group" refers to a straight-chain or branched-chain aliphatic hydrocarbon group, unless otherwise defined. The alkyl group may be a “saturated alkyl group” that does not contain any double or triple bonds.

The alkyl group may be a C1 to C20 alkyl group. More specifically, the alkyl group may be a C1 to C10 alkyl group or a C1 to C6 alkyl group. For example, a C1 to C4 alkyl group means that the alkyl chain contains 1 to 4 carbon atoms, and includes methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl and t-butyl. It indicates that it is selected from the group consisting of.

Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a t-butyl group, a pentyl group, a hexyl group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group. means, etc.

As used herein, the term “cycloalkyl group” refers to a monovalent cyclic aliphatic hydrocarbon group unless otherwise defined.

In the present description, the term "alkenyl group", unless otherwise defined, is a straight-chain or branched-chain aliphatic hydrocarbon group, and means an aliphatic unsaturated alkenyl group containing one or more double bonds. do.

In the present description, the term "alkynyl group", unless otherwise defined, is a straight or branched aliphatic hydrocarbon group, and refers to an unsaturated alkynyl group containing one or more triple bonds. do.

In the present description, the term "aryl group" refers to a substituent in which all elements of a cyclic substituent have p-orbitals, and these p-orbitals form a conjugate, monocyclic or fused ring policy contains a click (ie, a ring that divides adjacent pairs of carbon atoms) functionality.

Hereinafter, a composition for a semiconductor photoresist according to an embodiment will be described.

The composition for a semiconductor photoresist according to an embodiment of the present invention includes an organometallic compound and a solvent, and the organometallic compound is represented by the following formula (1).

[Formula 1]

In Formula 1,

R ¹ To R ⁶ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, OR ^a , -OC(=O)R ^b or a combination thereof,

R ^a and R ^b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alky a nyl group or a combination thereof,

R ¹ to R ⁶ are not hydrogen at the same time.

The organometallic compound included in the composition for a semiconductor photoresist according to an exemplary embodiment of the present invention includes 'Si' and 'Sn' at the same time, and the Si and Sn are directly bonded to each other.

The organometallic compound having such a structure may have excellent sensitivity due to low bonding energy between Si and Sn.

For example, R ¹ to R ⁶ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, OR ^a and -OC( = O) R ^b is at least one selected from the group consisting of,

R ^a and R ^b may each independently represent a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, or a combination thereof.

In a specific example, R ¹ to R ⁶ are each independently a methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, t-butyl group, OR ^a and -OC(=O)R ^b is at least one selected from the group consisting of,

R ^a and R ^b may each independently represent a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, or a combination thereof.

For example, R ^a and R ^b are each independently a methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, t-butyl group, or substituted or unsubstituted It may be a C2 to C6 alkenyl group.

For example, R ¹ to R ³ in Formula 1 may be the same or different from each other.

For example, R ⁴ to R ⁶ in Formula 1 may be the same or different.

For example, at least one of R ¹ to R ⁶ is OR ^a or -OC(=O)R ^b ,

R ^a and R ^b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alky It may be a nyl group or a combination thereof.

In a specific example, at least one of R ⁴ to R ⁶ is OR ^a or -OC(=O)R ^b ,

R ^a and R ^b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 It may be an alkynyl group or a combination thereof.

For example, Chemical Formula 1 may be represented by any one of Chemical Formulas 1-1 to 1-8 below.

[Formula 1-1] [Formula 1-2] [Formula 1-3]

[Formula 1-4] [Formula 1-5] [Formula 1-6]

[Formula 1-7] [Formula 1-8]

In Formulas 1-1 to 1-8,

R ¹ to R ⁵ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to a C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof;

R ^a , R ^a1 , R ^a2 , R ^a3 , R ^b , R ^b1 , R ^b2 and R ^b3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or It may be an unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a combination thereof.

On the other hand, it is preferable that the composition for a semiconductor photoresist according to an embodiment includes the above-described organometallic compound and a solvent.

The solvent included in the semiconductor photoresist composition according to the embodiment may be an organic solvent, for example, aromatic compounds (eg, xylene, toluene), alcohols (eg, 4-methyl-2-pentane). Ol, 4-methyl-2-propanol, 1-butanol, methanol, isopropyl alcohol, 1-propanol), ethers (eg anisole, tetrahydrofuran), esters (n-butyl acetate, propylene glycol) monomethyl ether acetate, ethyl acetate, ethyl lactate), ketones (eg, methyl ethyl ketone, 2-heptanone), mixtures thereof, and the like.

The composition for a semiconductor photoresist according to an embodiment may further include an additive in some cases. Examples of the additive include a surfactant, a crosslinking agent, a leveling agent, or a combination thereof.

The surfactant may be, for example, an alkylbenzenesulfonic acid salt, an alkylpyridinium salt, polyethylene glycol, a quaternary ammonium salt, or a combination thereof, but is not limited thereto.

The crosslinking agent may include, for example, a melamine-based crosslinking agent, a substituted urea-based crosslinking agent, an acrylic crosslinking agent, an epoxy-based crosslinking agent, or a polymer-based crosslinking agent, but is not limited thereto. Crosslinking agents having at least two crosslinking substituents, for example, methoxymethylated glycouryl, butoxymethylated glycouryl, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine , 4-hydroxybutyl acrylate, acrylic acid, urethane acrylate, acrylic methacrylate, 1,4-butanediol diglycidyl ether, glycidol, diglycidyl 1,2-cyclohexane dicarboxylate, A compound such as trimethylpropane triglycidyl ether, 1,3-bis(glycidoxypropyl_)tetramethyldisiloxane, methoxymethylated urea, butoxymethylated urea, or methoxymethylated thiourea can be used.

The leveling agent is for improving the coating flatness during printing, and a known leveling agent available in a commercial manner may be used.

The amount of these additives used may be easily adjusted according to desired physical properties or may be omitted.

In addition, the composition for semiconductor resist may further use a silane coupling agent as an additive to improve adhesion to the substrate (eg, to improve adhesion of the composition for semiconductor resist to the substrate), and as an adhesion promoter. The silane coupling agent is, for example, vinyltrimethoxysilane, vinyltriethoxysilane, vinyl trichlorosilane, vinyltris(β-methoxyethoxy)silane; or 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryl trimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldi ethoxysilane; A silane compound containing carbon-carbon unsaturated bonds such as trimethoxy[3-(phenylamino)propyl]silane may be used, but the present invention is not limited thereto.

In the composition for a semiconductor photoresist, pattern collapse may not occur even when a pattern having a high aspect ratio is formed. Thus, for example, a fine pattern having a width of 5 nm to 100 nm, for example, a fine pattern having a width of 5 nm to 80 nm, for example, a fine pattern having a width of 5 nm to 70 nm, for example, A fine pattern having a width of 5 nm to 50 nm, for example, a fine pattern having a width of 5 nm to 40 nm, for example, a fine pattern having a width of 5 nm to 30 nm, for example, a fine pattern having a width of 5 nm to 20 nm To form a pattern, a photoresist process using light having a wavelength of 5 nm to 150 nm, for example, a photoresist process using light having a wavelength of 5 nm to 100 nm, for example, a photo using light having a wavelength of 5 nm to 80 nm A resist process, for example a photoresist process using light with a wavelength of 5 nm to 50 nm, a photoresist process using light with a wavelength of 5 nm to 30 nm, for example, a photoresist process using light with a wavelength of 5 nm to 20 nm It can be used in photoresist processing. Therefore, using the composition for a semiconductor photoresist according to an embodiment, extreme ultraviolet lithography using an EUV light source having a wavelength of about 13.5 nm may be implemented.

Meanwhile, according to another exemplary embodiment, a method of forming a pattern using the above-described composition for a semiconductor photoresist may be provided. For example, the manufactured pattern may be a photoresist pattern. More specifically, it may be a negative photoresist pattern.

According to another exemplary embodiment, a method for forming a pattern includes forming an etch target film on a substrate, applying the above-described composition for a semiconductor photoresist on the etch target film to form a photoresist film, patterning the photoresist film to form a photoresist pattern and etching the etch target layer using the photoresist pattern as an etch mask.

Hereinafter, a method of forming a pattern using the above-described composition for a semiconductor photoresist will be described with reference to FIGS. 1 to 5 . 1 to 5 are cross-sectional views for explaining a pattern forming method using a composition for a semiconductor photoresist according to the present invention.

Referring to FIG. 1 , first, an object to be etched is prepared. An example of the object to be etched may be the thin film 102 formed on the semiconductor substrate 100 . Hereinafter, only the case where the object to be etched is the thin film 102 will be described. The surface of the thin film 102 is cleaned to remove contaminants and the like remaining on the thin film 102 . The thin film 102 may be, for example, a silicon nitride film, a polysilicon film, or a silicon oxide film.

Next, a composition for forming a resist underlayer film for forming the resist underlayer film 104 on the surface of the cleaned thin film 102 is coated by applying a spin coating method. However, one embodiment is not necessarily limited thereto, and various known coating methods, for example, spray coating, dip coating, knife edge coating, and printing methods, such as inkjet printing and screen printing, may be used.

The resist underlayer coating process may be omitted. Hereinafter, a case of coating the resist underlayer film will be described.

Thereafter, a drying and baking process is performed to form the resist underlayer 104 on the thin film 102 . The baking treatment may be performed at about 100 to about 500 °C, for example, at about 100 °C to about 300 °C.

The resist underlayer film 104 is formed between the substrate 100 and the photoresist film 106, so that radiation reflected from the interface between the substrate 100 and the photoresist film 106 or from an interlayer hardmask is not intended. In the case of scattering to a non-photoresist region, it is possible to prevent non-uniformity of photoresist linewidth and interfering with pattern formation.

Referring to FIG. 2 , a photoresist film 106 is formed by coating the above-described composition for a semiconductor photoresist on the resist underlayer 104 . The photoresist film 106 may be in a form in which the above-described semiconductor photoresist composition is coated on the thin film 102 formed on the substrate 100 and then cured through a heat treatment process.

More specifically, the step of forming the pattern using the composition for semiconductor photoresist is to apply the above-described composition for semiconductor resist on the substrate 100 on which the thin film 102 is formed by spin coating, slit coating, inkjet printing, etc. It may include a process of forming the photoresist film 106 by drying the process and the applied composition for a semiconductor photoresist.

Since the composition for a semiconductor photoresist has already been described in detail, a redundant description thereof will be omitted.

Next, a first baking process of heating the substrate 100 on which the photoresist film 106 is formed is performed. The first baking process may be performed at a temperature of about 80 °C to about 120 °C.

Referring to FIG. 3 , the photoresist layer 106 is selectively exposed.

For example, examples of the light that can be used in the exposure process include not only light having a short wavelength such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), but also EUV ( Light having a high energy wavelength such as Extreme UltraViolet (wavelength 13.5 nm), E-Beam (electron beam), etc. may be mentioned.

More specifically, the light for exposure according to an embodiment may be short-wavelength light having a wavelength range of 5 nm to 150 nm, and light having a high energy wavelength such as EUV (Extreme Ultraviolet; wavelength 13.5 nm), E-Beam (electron beam), etc. can

In the step of forming the photoresist pattern, a negative pattern may be formed.

The exposed region 106a of the photoresist film 106 has a solubility different from that of the unexposed region 106b of the photoresist film 106 as a polymer is formed by a crosslinking reaction such as condensation between organometallic compounds. .

Next, a second baking process is performed on the substrate 100 . The second baking process may be performed at a temperature of about 90 °C to about 200 °C. By performing the second baking process, the exposed region 106a of the photoresist layer 106 becomes difficult to dissolve in a developer.

4 shows a photoresist pattern 108 formed by dissolving and removing the photoresist film 106b corresponding to the unexposed region using a developer. Specifically, the photoresist pattern corresponding to the negative tone image ( 108) is completed.

As described above, the developer used in the pattern forming method according to the exemplary embodiment may be an organic solvent. As an example of the organic solvent used in the pattern forming method according to an embodiment, ketones such as methyl ethyl ketone, acetone, cyclohexanone, 2-haptanone, 4-methyl-2-propanol, 1-butanol, isopropanol, Alcohols such as 1-propanol and methanol, esters such as propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate and butyrolactone, aromatic compounds such as benzene, xylene and toluene, or these can be a combination of

As described above, not only light having a wavelength such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), but also EUV (Extreme UltraViolet; wavelength 13.5 nm), The photoresist pattern 108 formed by exposure to light having high energy, such as an E-beam (electron beam), may have a width of 5 nm to 100 nm. For example, the photoresist pattern 108 may be 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 5 nm to 50 nm, 5 nm to 40 nm, 5 nm to 30 nm, and may be formed to a width of 5 nm to 20 nm thick.

Meanwhile, the photoresist pattern 108 has a half-pitch of about 50 nm or less, for example 40 nm or less, for example 30 nm or less, for example 20 nm or less, for example 15 nm or less. and a pitch having a line width roughness of about 10 nm or less, about 5 nm or less, about 3 nm or less, or about 2 nm or less.

Next, the resist underlayer 104 is etched using the photoresist pattern 108 as an etching mask. The organic layer pattern 112 is formed through the etching process as described above. The formed organic layer pattern 112 may also have a width corresponding to the photoresist pattern 108 .

Referring to FIG. 5 , the exposed thin film 102 is etched by applying the photoresist pattern 108 as an etch mask. As a result, the thin film is formed as a thin film pattern 114 .

The thin film 102 may be etched, for example, by dry etching using an etching gas, and the etching gas may be, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ , or a mixture thereof.

In the exposure process performed above, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process performed using the EUV light source may have a width corresponding to the photoresist pattern 108 . . For example, the photoresist pattern 108 may have a width of 5 nm to 100 nm. For example, the thin film pattern 114 formed by the exposure process performed using the EUV light source is 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 like the photoresist pattern 108 . It may have a width of nm to 60 nm, 5 nm to 50 nm, 5 nm to 40 nm, 5 nm to 30 nm, 5 nm to 20 nm, and more specifically, may be formed to a width of 20 nm or less.

Hereinafter, the present invention will be described in more detail through Examples related to the preparation of the above-described composition for a semiconductor photoresist. However, the technical features of the present invention are not limited by the following examples.

Preparation of organometallic compounds

Synthesis Example 1

In a 100 mL round bottom flask, 10 g (28 mmol) of triphenyltin hydride was added, and 3 g of lithium diisopropylamide and THF (tetrahydrofuran) were added. After reaction at room temperature for 30 minutes, 3 g of trimethylsilyl chloride is slowly added. After 24 hr reaction, vacuum distillation was performed to obtain a compound of Formula 1A below.

[Formula 1A]

Synthesis Example 2

In a 100 mL round bottom flask, 10 g (28 mmol) of triphenyltin hydride was added, and 3 g of lithium diisopropylamide and THF were added. After reaction at room temperature for 30 minutes, 5 g of t-butyl dimethylsilyl chloride is slowly added. After 24 hr reaction, vacuum distillation was performed to obtain a compound of Formula 1B below.

[Formula 1B]

Synthesis Example 3

5 g (12 mmol) of the compound of Formula 1A synthesized in Synthesis Example 1 was added to a 100 mL round bottom flask, and 1.6 g of acetic acid was added. After heating to reflux for 24 hours, and vacuum distillation, 40% of the compound of Formula 1C was obtained.

[Formula 1C]

Synthesis Example 4: Synthesis of organometallic compound 4

5 g (12 mmol) of the compound of Formula 1A synthesized in Synthesis Example 1 was put into a 100 mL round bottom flask, and 2.6 g of propionic acid was added. It was heated to reflux for 24 hours and vacuum distilled to obtain a compound of Formula 1D below.

[Formula 1D]

Synthesis Example 5: Synthesis of organometallic compound 5

5 g (12 mmol) of the compound of Formula 1A synthesized in Synthesis Example 1 was added to a 100 mL round bottom flask, and 3.1 g of butyric acid was added. It was heated to reflux for 24 hours and vacuum distilled to obtain a compound of formula 1E below.

[Formula 1E]

Synthesis Example 6: Synthesis of organometallic compound 6

5 g (12 mmol) of the compound of Formula 1A synthesized in Synthesis Example 1 was put into a 100 mL round bottom flask, and 2.5 g of acrylic acid was added. It was heated to reflux for 48 hours and vacuum distilled to obtain a compound of Formula 1F below.

[Formula 1F]

Synthesis Example 7: Synthesis of organometallic compound 7

5 g (12 mmol) of the compound of Formula 1A synthesized in Synthesis Example 1 was added to a 100 mL round bottom flask, and 3.0 g of methacrylic acid was added. The mixture was heated to reflux for 48 hours and vacuum distilled to obtain a compound of Formula 1G.

[Formula 1G]

Synthesis Example 8

5 g (11 mmol) of the compound of Formula 1B synthesized in Synthesis Example 2 was added to a 100 mL round bottom flask, and 1.5 g of acetic acid was added thereto. The mixture was heated to reflux for 24 hours and vacuum distilled to obtain a compound of Formula 1H.

[Formula 1H]

Synthesis Example 9

Dichloromethane was added to the compound of Formula 1A (5 g, 12 mmol) synthesized in Synthesis Example 1, and the temperature was lowered to 0 ^o C. 2M HCl solution is slowly added dropwise and reacted at room temperature for 24 hr. Upon completion of the reaction, the mixture was filtered, concentrated and dried under vacuum to obtain a compound represented by the following formula M.

Anhydrous pentane was added to the compound represented by Formula M (5 g, 16.8 mmol), and the temperature was lowered to 0 ^o C. After diethylamine was slowly added dropwise, t-butanol (3.7 g, 50.3 mmol) was added thereto, and the mixture was stirred at room temperature for 1 hour. When the reaction was completed, the mixture was filtered, concentrated and dried in vacuo to obtain a compound represented by the following Chemical Formula 1I.

[Formula M]

[Formula 1I]

Synthesis Example 10

Anhydrous pentane was added to the compound represented by Formula M (5 g, 16.8 mmol) synthesized in Synthesis Example 9, and the temperature was lowered to 0 ^o C. After diethylamine was slowly added dropwise, isopropyl alcohol (3 g, 50.3 mmol) was added thereto, and the mixture was stirred at room temperature for 1 hour. Upon completion of the reaction, the mixture was filtered, concentrated, and dried under vacuum to obtain a compound represented by the following formula 1J.

[Formula 1J]

Synthesis Example 11

Anhydrous pentane was added to the compound represented by Formula M (5 g, 16.8 mmol) synthesized in Synthesis Example 9, and the temperature was lowered to 0 ^o C. After diethylamine was slowly added dropwise, ethanol (2 g, 50.3 mmol) was added thereto, and the mixture was stirred at room temperature for 1 hour. When the reaction was completed, the mixture was filtered, concentrated, and dried in vacuo to obtain a compound represented by the following formula 1K.

[Formula 1K]

Comparative Synthesis Example 1

25 ml of acetic acid was slowly added dropwise to the compound represented by the following formula A-1 (10 g, 13.2 mmol) at room temperature, and then heated to reflux at 110° C. for 24 hours.

[Formula A-1]

Then, after raising the temperature to room temperature, acetic acid was vacuum distilled to obtain a compound represented by the following formula (X).

[Formula X]

Comparative Synthesis Example 2

The compound represented by the following formula A-2 (10 g, 13.2 mmol) was dissolved in 50 mL of CH ₂ Cl ₂ , and 4M HCl diethyl ether solution (6 equivalents, 39.6 mmol) was slowly added dropwise at -78 °C for 30 minutes. . After stirring at room temperature for 12 hours, the solvent was concentrated to obtain a compound represented by the following Chemical Formula A-3.

The compound represented by Formula A-3 (10 g, 19 mmol) was dissolved in anhydrous pentane, and the temperature was lowered to 0 °C. Then, diethylamine (16.3 ml, 158 mmol) was slowly added dropwise, and then isopropyl alcohol (9.5 g, 158 mmol) was added, followed by stirring at room temperature for 1 hour. Upon completion of the reaction, filtration, concentration, and vacuum drying were performed to obtain a compound represented by the following formula Y.

[Formula A-2] [Formula A-3]

[Formula Y]

Preparation of photoresist composition

Examples 1 to 9, Comparative Example 1 and Comparative Example 2

Synthesis Examples 3 to 11, and the organometallic compounds 1C to 1K obtained in Comparative Synthesis Example 1 and Comparative Synthesis Example 2, and the organometallic compounds X to Y in PGMEA (propylene glycol methyl ether acetate) at a concentration of 3 wt% It was dissolved and filtered with a 0.1 μm PTFE syringe filter to prepare a photoresist composition.

Evaluation 1: Solubility evaluation

The degree of solubility was determined based on when the organometallic compounds 1C to 1K obtained in Synthesis Examples 3 to 11, and Comparative Synthesis Example 1 and Comparative Synthesis Example 2, and the organometallic compounds X and Y were dissolved in xylene. It was evaluated in the following three steps, and the results are shown in Table 1 below.

○: 3 wt% or more dissolved in xylene

△: dissolved in xylene in an amount of 1 wt% or more and less than 3 wt%

X: less than 1% by weight dissolved in xylene

organometallic compounds Synthesis Example 3 Synthesis Example 4 Synthesis Example 5 Synthesis Example 6 Synthesis Example 7 Synthesis Example 8 Formula 1C Formula 1D Formula 1E Formula 1F Formula 1G Formula 1H Solubility ○ ○ ○ ○ ○ ○ organometallic compounds Synthesis Example 9 Synthesis Example 10 Synthesis Example 11 Comparative Synthesis Example 1 Comparative Synthesis Example 2 Formula 1I Formula 1J Formula 1K Formula X Formula Y Solubility ○ ○ ○ X △

Referring to Table 1, it can be seen that the organometallic compounds according to Synthesis Examples 3 to 11 have better solubility than Comparative Synthesis Examples 1 and 2.

Evaluation 2: Sensitivity and Line Edge Roughness (LER) Evaluation

The films according to Examples 1 to 9 and Comparative Examples 1 and 2 prepared by the above coating method on a circular silicon wafer were subjected to extreme ultraviolet (E) radiation at an acceleration voltage of 100 kV so that a 40 nm half-pitch nanowire pattern was formed. -beam). After exposing the exposed film to 170° C. for 60 seconds, it is immersed in a fedri dish containing 2-heptanone for 30 seconds, then taken out and washed with the same solvent for 10 seconds. Finally, after baking at 150° C. for 180 seconds, a pattern image is obtained by field emission scanning electron microscopy (FE-SEM). After measuring the CD (Critical Dimension) size and line edge roughness (LER) of the formed line confirmed from the FE-SEM image, the sensitivity and line edge roughness were evaluated according to the following criteria, and it is shown in Table 2.

※ Evaluation standard

(1) Sensitivity

The CD size measured at 1000 uC/cm ² energy was evaluated according to the following criteria, and the results are shown in Table 2.

- ◎: 40 nm or more

- ○: 35nm or more and less than 40nm

- △: less than 35 nm

- X: Pattern not confirmed.

(2) Line Edge Roughness (LER)

- ○: 4 nm or less

- △: more than 4 nm and less than 7 nm

- X: greater than 7 nm

Evaluation 3: Storage stability evaluation

On the other hand, storage stability of the organometallic compounds used in Examples 1 to 9 and Comparative Examples 1 and 2 described above was evaluated according to the following criteria, and are shown together in Table 2 below.

[Storage Stability]

When the semiconductor photoresist compositions according to Examples 1 to 9 and Comparative Examples 1 and 2 were left for a specific period at room temperature (20±5° C.) at room temperature (20±5° C.), the degree of precipitation was visually observed, and according to the following storage standards, It was evaluated in two stages.

※ Evaluation standard

- ○: Can be stored for more than 1 month

- X: Can be stored for less than 2 weeks

Sensitivity LER (nm) storage stability Example 1 ◎ ○ ○ Example 2 ◎ ○ ○ Example 3 ◎ ○ ○ Example 4 ◎ ○ ○ Example 5 ◎ ○ ○ Example 6 ◎ ○ ○ Example 7 ○ ○ ○ Example 8 ○ △ ○ Example 9 ○ △ ○ Comparative Example 1 X X X Comparative Example 2 ○ △ ○

Referring to Table 2, the compositions for semiconductor photoresists according to Examples 1 to 9 had line edge roughness (LER), sensitivity, and storage stability equal to or higher than the compositions for semiconductor photoresists according to Comparative Examples 1 and 2 It can be seen that excellent

In the foregoing, specific embodiments of the present invention have been described and illustrated, but it is common knowledge in the art that the present invention is not limited to the described embodiments, and that various modifications and variations can be made without departing from the spirit and scope of the present invention. It is self-evident to those who have Accordingly, such modifications or variations should not be individually understood from the spirit or point of view of the present invention, and the modified embodiments should belong to the claims of the present invention.

100: substrate 102: thin film
104: resist underlayer film 106: photoresist film
106a: exposed area 106b: unexposed area
108: photoresist pattern 112: organic film pattern
114: thin film pattern

Claims (10)

A composition for a semiconductor photoresist comprising an organometallic compound represented by the following Chemical Formula 1, and a solvent:
[Formula 1]

In Formula 1,
R ¹ To R ⁶ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, OR ^a , -OC(=O)R ^b or a combination thereof,
R ^a and R ^b are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alky a nyl group or a combination thereof,
R ¹ to R ⁶ are not hydrogen at the same time.
In claim 1,
wherein R ¹ to R ⁶ are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, OR ^a and -OC(=O ) is at least one selected from the group consisting of R ^b ,
Wherein R ^a and R ^b are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, or a combination thereof, semiconductor photoresist for composition.
In claim 1,
wherein R ¹ to R ⁶ are each independently a methyl group, an ethyl group, n-propyl group, iso-propyl group, n-butyl group, iso-butyl group, sec-butyl group, t-butyl group, OR ^a and -OC ( = O) R ^b is at least one selected from the group consisting of,
Wherein R ^a and R ^b are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C2 to C8 alkenyl group, a substituted or unsubstituted C2 to C8 alkynyl group, or a combination thereof, semiconductor photoresist for composition.
In claim 1,
wherein R ^a and R ^b are each independently a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a t-butyl group, or a substituted or unsubstituted C2 to C6 alkenyl group, the composition for a semiconductor photoresist.
In claim 1,
Formula 1 is a composition for a semiconductor photoresist, which is represented by any one of Formulas 1-1 to 1-8 below:
[Formula 1-1] [Formula 1-2] [Formula 1-3]

[Formula 1-4] [Formula 1-5] [Formula 1-6]

[Formula 1-7] [Formula 1-8]

In Formulas 1-1 to 1-8,
R ¹ to R ⁵ are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to a C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof;
R ^a , R ^a1 , R ^a2 , R ^a3 , R ^b , R ^b1 , R ^b2 and R ^b3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or An unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a combination thereof, a composition for a semiconductor photoresist.
In claim 1,
A composition for a semiconductor photoresist, further comprising an additive of a surfactant, a crosslinking agent, a leveling agent, or a combination thereof.
forming an etch target layer on the substrate;
forming a photoresist layer by applying the composition for a semiconductor photoresist according to any one of claims 1 to 6 on the etching target layer;
forming a photoresist pattern by patterning the photoresist layer; and
and etching the etch target layer using the photoresist pattern as an etch mask.
In claim 7,
The step of forming the photoresist pattern is a pattern forming method using light having a wavelength of 5 nm to 150 nm.
In claim 7,
The method further comprising the step of providing a resist underlayer film formed between the substrate and the photoresist film.
In claim 7,
The photoresist pattern is a pattern forming method having a width of 5 nm to 100 nm.

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