KR20220094014A - Apparatuse for precossing substrate and apparatus for processing substrate - Google Patents

Abstract

The present invention relates to a substrate processing device, which includes: a housing having an inner space; a heating chamber disposed in the inner space and having a processing space for heating a substrate; and an integrated exhaust unit exhausting the inner space and the processing space. The integrated exhaust unit may include: an integrated exhaust duct which is installed outside the housing and through which a first supply air having a first flow rate always flows; and an air supply device supplying a second air supply faster than a first flow rate to the integrated exhaust duct.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to an apparatus and method for processing a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, the photo process includes a coating process of forming a film by applying a photoresist such as a photoresist to the surface of the substrate, an exposure process of transferring a circuit pattern to a film formed on the substrate, and a substrate selectively in the exposed region or vice versa and a developing process of removing the film formed thereon. After the liquid film is formed on the substrate, a baking process of heating the substrate to blow an organic material onto the liquid film to stabilize the liquid film is performed. The baking process includes a process of placing a substrate on a heating plate and heating the substrate to a very high temperature compared to room temperature.

In this heating process, a large amount of fumes are generated in the process of baking the liquid film on the substrate, and exhaust is required to discharge the fumes. However, in the exhaust configuration of a general baking unit, only a certain amount of exhaust can be controlled, so there is a problem in that a large amount of fumes generated by the heating process cannot be smoothly discharged.

In addition, there is a problem in that the substrate introduced into the bake unit and the inside of the bake unit are contaminated by the fumes that are not discharged.

An object of the present invention is to provide a substrate processing apparatus and method capable of efficiently discharging a large amount of fumes generated in a heating process.

Another object of the present invention is to provide a substrate processing apparatus and method capable of maximizing exhaust efficiency by selectively operating the intensity of exhaust in a bake unit.

In addition, an object of the present invention is to provide a substrate processing apparatus and method capable of enhancing the discharge power of fumes and particles before and after each process.

Another object of the present invention is to provide a substrate processing apparatus and method capable of reducing the number of cleaning operations of equipment.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention discloses an apparatus for processing a substrate.

A substrate processing apparatus includes: a housing having an interior space; a heating chamber disposed in the inner space and having a processing space for heating the substrate; an integrated exhaust unit exhausting the inner space and the processing space, the integrated exhaust unit comprising: an integrated exhaust duct installed outside the housing and through which first supply air having a first flow rate always flows; and an air supply device for supplying a second supply air faster than the first flow rate to the integrated exhaust duct.

The method may further include a controller for controlling the air supply device, wherein the controller may control the secondary air supply to be supplied to the integrated exhaust duct during a heating process of the substrate in the processing space.

The controller may control the supply of the secondary air to be stopped after the heating process is finished.

The integrated exhaust unit has a first exhaust force when the first supply air flows through the integrated exhaust duct, and a first exhaust force greater than a first exhaust force when the first supply and the second supply air flow together through the integrated exhaust duct It can have 2 exhaust power.

The controller may selectively control the integrated exhaust unit to have the first exhaust force or the second exhaust force.

The heating chamber includes an upper body and a lower body that are combined with each other to form the processing space therein, and at least one of the upper body and the lower body is raised and lowered to adjust the relative height between the upper body and the lower body. including a unit, wherein the controller may control so that the secondary supply air is supplied to the integrated exhaust duct when the upper body and the lower body are sealed after the substrate is introduced into the processing space.

The controller may control the supply of the secondary air to be stopped before the upper body and the lower body are opened.

The present invention discloses an apparatus for processing a substrate.

A substrate processing apparatus includes: a housing having an interior space; a heating chamber disposed in the inner space and having a processing space in which a substrate is heated; an integrated exhaust unit for exhausting the inner space and the processing space, the integrated exhaust unit comprising: an integrated exhaust duct installed outside the housing and to which first supply air having a first flow rate is constantly supplied; an air supply device for supplying secondary supply air faster than a first flow rate to the integrated exhaust duct, wherein a controller controls that the secondary supply air is supplied to the integrated exhaust duct while the substrate is heated in the processing space; After the heating of the substrate is finished, the supply of the secondary air is controlled to be stopped.

The heating chamber includes an upper body and a lower body that are combined with each other to form the processing space therein, a blocking position where the upper body and the lower body are combined and sealed, and the upper body and the lower body are spaced apart and open and an elevating unit for elevating and lowering at least one of the upper body and the lower body to move between the open positions, wherein the controller is configured to: The supply air is controlled to be supplied to the integrated exhaust duct, and when the upper body and the lower body are positioned in the open position, it is possible to control the supply of the second supply air to be stopped.

The present invention discloses a method for processing a substrate by evacuating an interior space of a chamber for heat processing the substrate.

In the substrate processing method, the internal space is exhausted with a first exhaust force, and is exhausted with a second exhaust force greater than the first exhaust force while the heat treatment is in progress.

The speed of the supply air supplied when the inner space is exhausted by the first exhaust force and the speed of the supply air supplied when the inner space is exhausted by the second exhaust force may be different from each other.

When the inner space is exhausted with the first exhaust force, the first supply air flowing at the first flow rate is supplied, and when the inner space is exhausted with the second exhaust force, a second flow rate faster than the first flow rate A secondary air flowing to the may be provided together with the first air supply.

According to the present invention, it is possible to provide a substrate processing apparatus and method capable of efficiently discharging a large amount of fumes generated in a heating process.

In addition, exhaust efficiency can be maximized by selectively operating the intensity of exhaust in the heat treatment chamber.

In addition, it is possible to enhance the discharge power of fume and particles before and after each process.

In addition, it is possible to reduce the number of cleaning operations of the equipment.

The effects of the present invention are not limited to the above-described effects, and the effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 .
3 is a plan view of the substrate processing apparatus of FIG. 1 .
FIG. 4 is a view showing an example of a hand of the transport robot of FIG. 3 .
5 is a plan view schematically illustrating an example of the heat treatment chamber of FIG. 3 .
6 is a front view of the heat treatment chamber of FIG. 5 .
FIG. 7 is a cross-sectional view showing the heating unit of FIG. 6 .
8 is a plan view illustrating the substrate support unit of FIG. 7 .
9 is a plan view schematically illustrating an integrated exhaust unit of a heat treatment chamber according to an embodiment of the present invention.
FIG. 10 is a diagram schematically illustrating a flow of an air flow when exhausted at a first flow rate in the integrated exhaust unit of FIG. 9 .
FIG. 11 is a diagram schematically illustrating a flow of airflow when exhausted at a second flow rate in the integrated exhaust unit of FIG. 9 .

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them. However, the present invention may be implemented in several different forms and is not limited to the embodiments described herein. In addition, in describing a preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

"Including" a certain component means that other components may be further included, rather than excluding other components, unless otherwise stated. Specifically, terms such as “comprise” or “have” are intended to designate that a feature, number, step, action, component, part, or combination thereof described in the specification is present, and includes one or more other features or It should be understood that the existence or addition of numbers, steps, operations, components, parts, or combinations thereof does not preclude the possibility of addition.

The singular expression includes the plural expression unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

The term “and/or” includes any one and all combinations of one or more of those listed items. In addition, in the present specification, "connected" means not only when member A and member B are directly connected, but also when member A and member B are indirectly connected with member C interposed between member A and member B. do.

Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.

A controller (not shown) may control overall operations of the substrate processing apparatus. The controller (not shown) may include a central processing unit (CPU), read only memory (ROM), and random access memory (RAM). The CPU executes desired processing, such as liquid processing and drying processing, which will be described later, according to various recipes stored in these storage areas. In the recipe, process time, process pressure, press temperature, various gas flow rates, etc., which are control information of the device for process conditions, are input. In addition, recipes indicating these programs and processing conditions may be stored in a hard disk or semiconductor memory. In addition, the recipe may be set at a predetermined position in the storage area while being accommodated in a portable computer-readable storage medium such as a CD-ROM or DVD.

The apparatus of this embodiment can be used to perform photo processing on a circular substrate. In particular, the apparatus of this embodiment may be connected to an exposure apparatus and used to perform a coating process and a developing process on a substrate. However, the technical spirit of the present invention is not limited thereto, and may be used in various types of processes for supplying a treatment solution to the substrate while rotating the substrate. Hereinafter, a case in which a wafer is used as a substrate will be described as an example.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 11 .

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 , and FIG. 3 is the substrate processing apparatus of FIG. 1 is a plan view of

1 to 3 , the substrate processing apparatus 1 includes an index module 20 , a processing module 30 , and an interface module 40 . According to an embodiment, the index module 20 , the processing module 30 , and the interface module 40 are sequentially arranged in a line. Hereinafter, a direction in which the index module 20 , the processing module 30 , and the interface module 40 are arranged is referred to as a first direction 12 , and a direction perpendicular to the first direction 12 when viewed from the top is referred to as a first direction 12 . A second direction 14 is referred to, and a direction perpendicular to both the first direction 12 and the second direction 14 is referred to as a third direction 16 .

The index module 20 transfers the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 , and accommodates the processed substrate W in the container 10 . The longitudinal direction of the index module 20 is provided in the second direction 14 . The index module 20 has a load port 22 and an index frame 24 . With reference to the index frame 24 , the load port 22 is located on the opposite side of the processing module 30 . The container 10 in which the substrates W are accommodated is placed on the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the second direction 14 .

As the container 10, a closed container 10 such as a Front Open Unified Pod (FOUP) may be used. The vessel 10 may be placed at the load port 22 by an operator or a transfer means (not shown) such as an Overhead Transfer, Overhead Conveyor, or Automatic Guided Vehicle. can

An index robot 2200 is provided inside the index frame 24 . A guide rail 2300 having a longitudinal direction in the second direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the third direction 16 , and moves in the third direction 16 . It may be provided to be movable along with it.

The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has an application block 30a and a developing block 30b. The coating block 30a performs a coating process on the substrate W, and the developing block 30b performs a development process on the substrate W. A plurality of application blocks 30a are provided, and they are provided to be stacked on each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are provided to be stacked on each other. According to the embodiment of Fig. 2, two application blocks 30a are provided, and two developing blocks 30b are provided. The application blocks 30a may be disposed below the developing blocks 30b. According to an example, the two application blocks 30a may perform the same process as each other, and may be provided in the same structure. In addition, the two developing blocks 30b may perform the same process as each other, and may be provided in the same structure.

Referring to FIG. 3 , the application block 30a includes a heat treatment chamber 3200 , a transfer chamber 3400 , a liquid processing chamber 3600 , and a buffer chamber 3800 . The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid on the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the application block 30a.

The transfer chamber 3400 is provided so that its longitudinal direction is parallel to the first direction 12 . The transfer chamber 3400 is provided with a transfer robot 3422 . The transfer robot 3422 transfers a substrate between the heat treatment chamber 3200 , the liquid processing chamber 3600 , and the buffer chamber 3800 . According to an example, the transfer robot 3422 has a hand 3420 on which the substrate W is placed, and the hand 3420 moves forward and backward, rotates about the third direction 16 , and the third direction. It may be provided movably along (16). A guide rail 3300 having a longitudinal direction parallel to the first direction 12 is provided in the transfer chamber 3400 , and the transfer robot 3422 may be provided movably on the guide rail 3300 . .

FIG. 4 is a view showing an example of a hand of the transport robot of FIG. 3 .

Referring to FIG. 4 , the hand 3420 has a base 3428 and a support protrusion 3429 . The base 3428 may have an annular ring shape in which a portion of the circumference is bent. The base 3428 has an inner diameter greater than the diameter of the substrate W. As shown in FIG. A support protrusion 3429 extends inwardly from the base 3428 . A plurality of support protrusions 3429 are provided, and support an edge region of the substrate W. As shown in FIG. According to an example, four support protrusions 3429 may be provided at equal intervals.

A plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the first direction 12 . The heat treatment chambers 3200 are located at one side of the transfer chamber 3400 .

5 is a plan view schematically illustrating an example of the heat treatment chamber of FIG. 3 , and FIG. 6 is a front view of the heat treatment chamber of FIG. 5 . 5 and 6 , the heat treatment chamber 3200 includes a housing 3210 , a cooling unit 3220 , a heating unit 3230 , and a transfer plate 3240 .

The housing 3210 is provided in the shape of a rectangular parallelepiped having an inner space. An inlet (not shown) through which the substrate W enters and exits is formed in one wall of the housing 3210 . For example, one side wall of the housing 3210 may be a surface facing the transfer chamber 3400 . The carrying inlet 3214 may be maintained in an open state. Optionally, a door (not shown) may be provided to open and close the loading/unloading port 3214 . A cooling unit 3220 , a heating unit 3230 , and a conveying plate 3240 are positioned in the inner space of the housing 3210 . The cooling unit 3220 and the heating unit 3230 are provided side by side along the second direction 14 . According to an example, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 3230 .

The cooling unit 3220 has a cooling plate 3222 . The cooling plate 3222 may have a generally circular shape when viewed from the top. A cooling member 3224 is provided on the cooling plate 3222 . According to an example, the cooling member 3224 is formed inside the cooling plate 3222 and may be provided as a flow path through which the cooling fluid flows.

The heating unit 3230 is provided as the apparatus 1000 for heating the substrate W to a temperature higher than room temperature. The heating unit 3230 heats the substrate W in an atmospheric pressure or a reduced pressure atmosphere lower than this to bake.

FIG. 7 is a cross-sectional view showing the heating unit of FIG. 6 .

Referring to FIG. 7 , the heating unit 1000 includes a chamber 1100 , a substrate support unit 1300 , a fan unit 3252 , and a second exhaust unit 1500 .

The chamber 1100 provides a processing space 1110 for heat-processing the substrate W therein. The processing space 1110 is provided as a space blocked from the outside. The chamber 1100 includes an upper body 1120 , a lower body 1140 , and a sealing member 1160 .

The upper body 1120 is provided in a cylindrical shape with an open lower portion. An exhaust hole 1124 and an inlet hole 1122 are formed on the upper surface of the upper body 1120 . The exhaust hole 1124 is formed in the center of the upper body 1120 . The exhaust hole 1124 exhausts the atmosphere of the processing space 1110 . A plurality of inlet holes 1122 are provided to be spaced apart, and are arranged to surround the exhaust holes 1124 . The inlet holes 1122 introduce an external airflow into the processing space 1110 . According to an example, the number of inlet holes 1122 may be four, and the external airflow may be air.

The lower body 1140 is provided in a cylindrical shape with an open top. The lower body 1140 is located below the upper body 1120 . The upper body 1120 and the lower body 1140 are positioned to face each other in the vertical direction. The upper body 1120 and the lower body 1140 are combined with each other to form a processing space 1110 therein. The upper body 1120 and the lower body 1140 are positioned so that their central axes coincide with each other in the vertical direction. The lower body 1140 may have the same diameter as the upper body 1120 . That is, the upper end of the lower body 1140 may be positioned to face the lower end of the upper body 1120 .

One of the upper body 1120 and the lower body 1140 is moved to the open position and the closed position by the lifting member 1130 , and the other one is fixed. In this embodiment, it will be described that the position of the lower body 1140 is fixed and the upper body 1120 is moved. The open position is a position where the upper body 1120 and the lower body 1140 are spaced apart from each other and the processing space 1110 is opened. The blocking position is a position where the processing space 1110 is sealed from the outside by the lower body 1140 and the upper body 1120 .

The sealing member 1160 is positioned between the upper body 1120 and the lower body 1140 . The sealing member 1160 seals the processing space from the outside when the upper body 1120 and the lower body 1140 come into contact with each other. The sealing member 1160 may be provided in an annular ring shape. The sealing member 1160 may be fixedly coupled to the upper end of the lower body 1140 .

The substrate support unit 1300 supports the substrate W in the processing space 1110 . The substrate support unit 1300 is fixedly coupled to the lower body 1140 . The substrate support unit 1300 includes a heating plate 1310 , a lift pin 1340 , and a support pin 1360 .

FIG. 8 is a plan view illustrating the substrate support unit of FIG. 7 . 7 and 8 , the heating plate 1310 includes a support plate 1320 and a heater 1420 . The support plate 1320 transfers heat generated from the heater 1420 to the substrate W. The support plate 1320 is provided in a circular plate shape. The upper surface of the support plate 1320 has a larger diameter than the substrate W. As shown in FIG. The upper surface of the support plate 1320 functions as a seating surface 1320a on which the substrate W is placed. A plurality of lift holes 1322 are formed on the seating surface 1320a. The lift holes 1322 are located in different areas. When viewed from the top, the lift holes 1322 are respectively arranged to surround the center of the upper surface of the support plate 1320 . Each of the lift holes 1322 is arranged to be spaced apart from each other in the circumferential direction. The lift holes 1322 may be positioned to be spaced apart from each other at the same distance. For example, three lift holes 1322 may be provided. The support plate 1320 may be made of a material including aluminum nitride (AlN).

The heater 1420 heats the substrate W placed on the support plate 1320 . The heater 1420 is positioned below the substrate W placed on the support plate 1320 . A plurality of heaters 1420 are provided. The heaters 1420 may be located in the support plate 1320 or located on the bottom of the support plate 1320 . Each of the heaters 1420 is located on the same plane. According to an example, each of the heaters 1420 may heat different regions of the seating surface to different temperatures. Some of the heaters 1420 may heat a central region of the seating surface 1320a to a first temperature, and other of the heaters 1420 may heat an edge region of the seating surface 1320a to a second temperature. . The second temperature may be a temperature higher than the first temperature. The heaters 1420 may be printed patterns or hot wires.

The lift pins 1340 elevate the substrate W on the support plate 1320 . A plurality of lift pins 1340 are provided, and each of the lift pins 1340 is provided in the shape of a vertical vertical pin. A lift pin 1340 is positioned in each lift hole 1322 . A driving member (not shown) moves each of the lift pins 1340 between the lifting position and the lowering position. Here, the lifting position is defined as a position where the upper end of the lift pin 1340 is higher than the seating surface 1320a, and the lowering position is defined as a position where the upper end of the lift pin 1340 is the same as or lower than the seat surface 1320a. A driving member (not shown) may be located outside the chamber 1100 . The driving member (not shown) may be a cylinder.

The support pin 1360 prevents the substrate W from directly contacting the seating surface 1320a. The support pin 1360 is provided in a pin shape having a longitudinal direction parallel to the lift pin 1340 . A plurality of support pins 1360 are provided, and each is fixedly installed on the seating surface 1320a. The support pins 1360 are positioned to protrude upward from the seating surface 1320a. The upper end of the support pin 1360 is provided as a contact surface in direct contact with the bottom surface of the substrate W, and the contact surface has a convex upward shape. Accordingly, the contact area between the support pin 1360 and the substrate W may be minimized.

The guide 1380 guides the substrate W so that the substrate W is placed in a regular position on the seating surface 1320a. The guide 1380 is provided to have an annular ring shape surrounding the seating surface 1320a. The guide 1380 has a larger diameter than the substrate W. The inner surface of the guide 1380 has a downwardly inclined shape as it approaches the central axis of the support plate 1320 . Accordingly, the substrate W spanning the inner surface of the guide 1380 is moved to the original position riding the inclined surface.

The second exhaust unit 1500 forcibly exhausts the inside of the processing space 1110 . The second exhaust unit 1500 includes an exhaust pipe 1530 and a guide plate 1520 . The exhaust pipe 1530 has a tubular shape in which the longitudinal direction is perpendicular to the vertical direction. The exhaust pipe 1530 is positioned to pass through the upper wall of the upper body 1120 . According to an example, the exhaust pipe 1530 may be positioned to be inserted into the exhaust hole 1124 . That is, the lower end of the exhaust pipe 1530 is located in the processing space 1110 , and the upper end of the exhaust pipe 1530 is located outside the processing space 1110 . A damper member (not shown) may be connected to an upper end of the exhaust pipe 1530 . The damper member depressurizes the exhaust pipe 1530 . Accordingly, the atmosphere of the processing space 1110 is exhausted sequentially through the through hole 1522 and the exhaust pipe 1530 .

The guide plate 1520 has a plate shape having a through hole 1522 in the center. The guide plate 1520 has a circular plate shape extending from the lower end of the exhaust pipe 1530 . The guide plate 1520 is fixedly coupled to the exhaust pipe 1530 so that the through hole 1522 and the inside of the exhaust pipe 1530 communicate with each other. The guide plate 1520 is positioned on the upper portion of the support plate 1320 to face the support surface of the support plate 1320 . The guide plate 1520 is positioned higher than the lower body 1140 . According to an example, the guide plate 1520 may be positioned at a height facing the upper body 1120 . When viewed from the top, the guide plate 1520 is positioned to overlap the inlet hole 1122 and has a diameter spaced apart from the inner surface of the upper body 1120 . Accordingly, a gap is generated between the side end of the guide plate 1520 and the inner surface of the upper body 1120 , and the gap is provided as a flow path through which the air flow introduced through the inlet hole 1122 is supplied to the substrate W.

Referring back to FIGS. 5 and 6 , the heat treatment chamber 3200 includes a fan unit 3252 that forms an airflow in the internal space 3212 of the housing 3210 , and a first that exhausts the atmosphere of the internal space 3212 . and an exhaust unit 3254 . Airflow may flow in generally one direction in the interior space 3212 . The fan unit 3252 supplies air to the internal space 3212 , and the first exhaust unit 3254 exhausts the internal space 3212 . Each of the fan unit 3252 and the exhaust unit 3254 is installed in the housing 3210 . The fan unit 3252 includes a fan 3252a and an air supply line 3252b capable of supplying air, and the first exhaust unit 3254 includes an air exhaust line 3254 capable of exhausting the internal space 3212. . A damper member (not shown) may be installed on the exhaust line of the first exhaust unit 3254 . For example, the fan unit 3252 may be installed on the ceiling surface of the housing 3210 , and the first exhaust unit 3254 may be installed on the bottom surface of the housing 3210 . Accordingly, an airflow of a downwardly inclined flow may be formed in the inner space 3212 in one direction, and even if the particles generated in the processing space 1110 are exposed to the outside, the airflow of the downwardly inclined flow may diffuse the particles. suppress

When viewed from the top, the fan unit 3252 and the first exhaust unit 3254 are disposed along a direction parallel to the second direction 14 . When viewed from above, the fan unit 3252 and the first exhaust unit 3254 are arranged such that a cooling unit 3220 and a heating unit 3230 are positioned therebetween. According to an example, the fan unit 3252 may be located closer to the inlet 3214 formed in the housing 3210 than the first exhaust unit 3254 . When viewed from above, the cooling unit 3220 is located closer to the fan unit 3252 than the heating unit 3230 , and the heating unit 3230 is closer to the first exhaust unit 3254 than the cooling unit 3220 . can be located. Due to this, the air supplied from the fan unit 3252 may pass through the cooling unit 3220 to form an airflow having a temperature lower than room temperature.

9 is a plan view schematically showing an integrated exhaust unit of a heat treatment chamber according to an embodiment of the present invention. FIG. 10 is a diagram schematically illustrating a flow of an air flow when exhausted at a first flow rate in the integrated exhaust unit of FIG. 9 . 11 is a diagram schematically illustrating a flow of an air stream when exhausted at a second flow rate in the integrated exhaust unit of FIG. 9 .

Referring to FIG. 9 , the heat treatment chamber 3202 includes a plurality of heat treatment chambers 3202 . The plurality of heat treatment chambers 3202 are arranged in one direction. Also, the plurality of thermal treatment chambers 3202 may be arranged to be stacked. Each of the plurality of heat treatment chambers 3202 includes a first exhaust unit 3254 . A plurality of first exhaust units 3254 for exhausting the atmosphere of the internal space 3212 of each of the plurality of heat treatment chambers 3202 are connected to an integrated exhaust unit 3500 to be described later.

The substrate processing apparatus 1000 includes an integrated exhaust unit 3500 . The integrated exhaust unit 3500 discharges the airflow passing through the first exhaust unit 3254 exhausting the inner space 3212 of the plurality of heat treatment chambers 3202 to the outside. The airflow discharged from the first exhaust unit 3254 flows in one direction inside the integrated exhaust unit 3500 . The integrated exhaust unit 3500 may be provided with a pressure reducing pump (not shown). The decompression pump provides the suction power of the integrated exhaust unit 3500, through which the airflow of the internal space 3212 of the plurality of heat treatment chambers 3202 is discharged to the integrated exhaust unit 3500 through the first exhaust unit 3254 do. In addition, the decompression pump provides the suction power of the integrated exhaust unit 3500 , so that the internal atmosphere of the processing space 1110 of the chamber 1100 is transferred to the internal space 3212 of the heat treatment chamber 3202 through the second exhaust unit 1500 . ), the airflow discharged to the internal space 3212 is discharged to the integrated exhaust unit 3500 through the first exhaust unit 3254 . The air flow discharged to the integrated exhaust unit 3500 is discharged to the outside.

The integrated exhaust unit 3500 includes an integrated exhaust duct 3520 , an air supply device 3540 for supplying air to the integrated exhaust duct 3520 , and a controller 3560 for controlling the amount of supply air supplied from the air supply device 3540 . ) is included. The first exhaust unit 3254 of the plurality of heat treatment chambers 3202 is coupled to the integrated exhaust duct 3520 , as described above. Supply air flows in one direction inside the integrated exhaust duct 3520 . Inside the integrated exhaust duct 3520, the first supply air A1 having a first flow rate flows. The first air supply (A1) always flows through the interior of the integrated exhaust duct (3520). The first air supply A1 may exhaust the internal space 3212 of the heat treatment chamber 3202 and the processing space 1110 of the housing 1000 while constantly flowing inside the integrated exhaust duct 3520 . In this process, fumes and particles in the interior space 3212 and the processing space 1110 are discharged to the outside through the integrated exhaust duct 3520 .

The air supply device 3540 provides a large amount of secondary supply air A2 flowing at a second flow rate faster than the first flow rate to the integrated exhaust duct 3520 . In this case, the first air supply (A1) flowing at the first flow rate and the second supply air (A2) flowing at the second flow rate may flow together in one direction in the integrated exhaust duct 3520 . The air supply device 3540 is installed on the supply tank 3542, an air supply line 3544 connecting the supply tank 3542 and the integrated exhaust duct 3520, and the air supply line 3544 to connect the supply line 3544. and an air supply valve 3546 that opens and closes. The supply tank 3542 is a supply air supply source, and a separate pump may be provided so that supply air may be introduced from the outside. The air supply line 3544 is a passage through which the supply air supplied from the supply tank 3542 moves to the integrated exhaust duct 3520 . The air supply valve 3546 opens and closes the air supply line 3544 to control the amount of supply air flowing inside the air supply line 3544 .

The controller 3560 controls the air supply device 3540 . 10 and 11 , the controller 3560 controls opening and closing of the air supply valve 3546 . The controller 3560 may selectively supply a large amount of secondary supply air A2 to the integrated exhaust duct 3520 , thereby enhancing the exhaust power of the processing space 1110 and the internal space 3212 . For example, the controller 3560 controls the air supply valve 2544 to be opened during the heating process to supply the secondary air supply A2 to the integrated exhaust duct 3520, and the heated substrate W after the heating process is completed. When the conveying and cooling process is in progress, the air supply valve 2544 is controlled to close, and the supply of the second air supply A2 to the integrated exhaust duct 3520 is stopped. That is, the controller 3560 controls the air supply valve 2544 to open when the upper body 1120 and the lower body 1140 are closed by the elevating unit 1130 to open the second supply air to the integrated exhaust duct 3520 ( A2) is supplied. In this case, the exhaust power of the integrated exhaust unit 3500 is increased due to the second air supply A2 flowing together with the first air supply A1, so that a large amount of fumes and particles generated during the heating process are generated in the second exhaust unit 1500 ) and the first exhaust unit 3254 through the integrated exhaust duct 3520, discharged to the outside. In addition, the controller 3560 controls the air supply valve 2544 to close before the heating process is finished and the upper body 1120 is spaced apart from the lower body 1140 to close the secondary air supply A2 to the integrated exhaust duct 3520 . ) to stop the supply. In the process of transporting the substrate W through the transport plate 3240 and the process of cooling the substrate W via the cooling plate 3220 , the amount of particles generated is smaller than that of the heating process. Therefore, it is easy to discharge the particles floating in the internal space 3212 only by the exhaust force by the first air supply A1 that always flows through the interior of the integrated exhaust duct 3250 even if the second air supply A2 is not supplied.

In the case of the integrated exhaust duct 3520 in which the air supply device 3540 is not provided, only the first air supply A1 having the first flow rate always flows. In general, a heating process of heating the substrate W is performed after the photoresist is applied or after the developer is applied. The heating process is performed in the sealed chamber 1100 . In the process of heating the chemical-treated substrate W, a large amount of fumes or particles are generated. A large amount of fume or particles is discharged into the inner space 3212 through the second exhaust unit 1500 provided in the upper body 1120 to the processing space 1110 of the chamber 1100, It is discharged to the outside through the integrated exhaust duct 3250 through the 1 exhaust unit 3254. However, in the case of the integrated exhaust duct 3520 in which the air supply device 3540 is not provided, only the first air supply A1 having a first flow rate flows, so that the exhaust force is weak and in the treatment space 1110 and the internal space 3212 . Floating fumes and particles are not sufficiently discharged. In addition, if the flow rate of the first air supply (A1) that always flows inside the integrated exhaust duct 3500 is set at high speed, it may affect the entire process, so it is impossible to set the flow rate of the first air supply (A1) at high speed do.

However, according to the present invention, the multidirectional secondary supply air A2 having a second flow rate selectively through the air supply device 3540 can be supplied to the integrated exhaust duct 3520, so that a large amount of fumes generated in the heating process can be efficiently removed. can be discharged as In addition, exhaust efficiency can be maximized by selectively operating the intensity of exhaust in the heat treatment chamber. In addition, it is possible to strengthen the discharge power of fume and particles before and after each process, thereby reducing the number of cleaning operations of the equipment.

Referring back to FIGS. 5 and 6 , the transport plate 3240 is provided in a substantially disk shape, and has a diameter corresponding to that of the substrate W. As shown in FIG. A notch 3244 is formed at the edge of the conveying plate 3240 . The notch 3244 may have a shape corresponding to the protrusion 3429 formed on the hand 3420 of the transfer robot 3422 described above. In addition, the notches 3244 are provided in a number corresponding to the protrusions 3429 formed on the hand 3420 , and are formed at positions corresponding to the protrusions 3429 . When the upper and lower positions of the hand 3420 and the carrier plate 3240 are changed in a position where the hand 3420 and the carrier plate 3240 are vertically aligned, the substrate W between the hand 3420 and the carrier plate 3240 is transfer takes place The transport plate 3240 is mounted on the guide rail 3249 , and may be moved along the guide rail 3249 by the actuator 3246 . A plurality of slit-shaped guide grooves 3242 are provided in the carrying plate 3240 . The guide groove 3242 extends from the end of the carrying plate 3240 to the inside of the carrying plate 3240 . The length direction of the guide grooves 3242 is provided along the second direction 14 , and the guide grooves 3242 are spaced apart from each other along the first direction 12 . The guide groove 3242 prevents the transfer plate 3240 and the lift pins 1340 from interfering with each other when the substrate W is transferred between the transfer plate 3240 and the heating unit 3230 .

The substrate W is heated in a state where the substrate W is placed directly on the support plate 1320 , and the substrate W is cooled by the transfer plate 3240 on which the substrate W is placed and the cooling plate 3222 . made in contact with The transfer plate 3240 is made of a material having a high heat transfer rate so that heat transfer between the cooling plate 3222 and the substrate W is well achieved. According to one example, the transport plate 3240 may be provided with a metal material.

A heating unit 3230 provided in some of the heat treatment chambers 3200 may supply a gas while heating the substrate W to improve the adhesion rate of the photoresist to the substrate W. According to an example, the gas may be hexamethyldisilane gas.

A plurality of liquid processing chambers 3600 are provided. Some of the liquid processing chambers 3600 may be provided to be stacked on each other. The liquid processing chambers 3600 are disposed at one side of the transfer chamber 3402 . The liquid processing chambers 3600 are arranged side by side in the first direction 12 . Some of the liquid processing chambers 3600 are provided adjacent to the index module 20 . Hereinafter, these liquid treatment chambers will be referred to as a front liquid treating chamber 3602 (front liquid treating chamber). Other portions of the liquid processing chambers 3600 are provided adjacent to the interface module 40 . Hereinafter, these liquid treatment chambers are referred to as rear heat treating chambers 3604 (rear heat treating chambers).

The front stage liquid processing chamber 3602 applies the first liquid on the substrate W, and the rear stage liquid processing chamber 3604 applies the second liquid on the substrate W. The first liquid and the second liquid may be different types of liquid. According to one embodiment, the first liquid is an anti-reflection film, and the second liquid is a photoresist. The photoresist may be applied on the substrate W on which the anti-reflection film is applied. Optionally, the first liquid may be a photoresist, and the second liquid may be an anti-reflection film. In this case, the anti-reflection film may be applied on the photoresist-coated substrate (W). Optionally, the first liquid and the second liquid are the same type of liquid, and they may both be photoresist.

16 is a diagram schematically illustrating an example of the liquid processing chamber of FIG. 3 . Referring to FIG. 16 , the liquid processing chambers 3602 and 3604 include a housing 3610 , a cup 3620 , a support unit 3640 , and a liquid supply unit 3660 . The housing 3610 is provided in the shape of a substantially rectangular parallelepiped. An inlet (not shown) through which the substrate W enters and exits is formed on the sidewall of the housing 3610 . The inlet may be opened and closed by a door (not shown). The cup 3620 , the support unit 3640 , and the liquid supply unit 3660 are provided in the housing 3610 . A fan filter unit 3670 for forming a downdraft in the housing 3260 may be provided on the upper wall of the housing 3610 . The cup 3620 has a processing space with an open top. The support unit 3640 is disposed in the processing space and supports the substrate W. The support unit 3640 is provided so that the substrate W is rotatable during liquid processing. The liquid supply unit 3660 supplies the liquid to the substrate W supported by the support unit 3640 .

Referring back to FIGS. 2 and 3 , a plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400 . Hereinafter, these buffer chambers will be referred to as a front buffer 3802 (front buffer). The front-end buffers 3802 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Another portion of the buffer chambers 3802 and 3804 is disposed between the transfer chamber 3400 and the interface module 40 hereinafter. These buffer chambers are referred to as rear buffer 3804 (rear buffer). The rear end buffers 3804 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Each of the front-end buffers 3802 and the back-end buffers 3804 temporarily stores a plurality of substrates W. As shown in FIG. The substrate W stored in the shear buffer 3802 is loaded or unloaded by the index robot 2200 and the transfer robot 3422 . The substrate W stored in the downstream buffer 3804 is carried in or carried out by the transfer robot 3422 and the first robot 4602 .

The developing block 30b has a heat treatment chamber 3200 , a transfer chamber 3400 , and a liquid treatment chamber 3600 . The heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the developing block 30b are the heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the application block 30a . ) and is provided in a structure and arrangement substantially similar to that of However, in the developing block 30b, all of the liquid processing chambers 3600 are provided as the developing chamber 3600 for processing the substrate by supplying a developer in the same manner.

The interface module 40 connects the processing module 30 to the external exposure apparatus 50 . The interface module 40 includes an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .

A fan filter unit for forming a descending airflow therein may be provided at an upper end of the interface frame 4100 . The additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600 are disposed inside the interface frame 4100 . The additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the application block 30a, is loaded into the exposure apparatus 50 . Optionally, the additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the exposure apparatus 50 , is loaded into the developing block 30b. According to one example, the additional process is an edge exposure process of exposing the edge region of the substrate W, a top surface cleaning process of cleaning the upper surface of the substrate W, or a bottom surface cleaning process of cleaning the lower surface of the substrate W can A plurality of additional process chambers 4200 may be provided, and these may be provided to be stacked on each other. All of the additional process chambers 4200 may be provided to perform the same process. Optionally, some of the additional process chambers 4200 may be provided to perform different processes.

The interface buffer 4400 provides a space in which the substrate W transferred between the application block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. A plurality of interface buffers 4400 may be provided, and a plurality of interface buffers 4400 may be provided to be stacked on each other.

According to an example, the additional process chamber 4200 may be disposed on one side of the transfer chamber 3400 along the lengthwise extension line, and the interface buffer 4400 may be disposed on the other side thereof.

The transfer member 4600 transfers the substrate W between the application block 30a, the addition process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 may be provided as one or a plurality of robots. According to an example, the conveying member 4600 includes a first robot 4602 and a second robot 4606 . The first robot 4602 transfers the substrate W between the application block 30a, the additional process chamber 4200, and the interface buffer 4400, and the interface robot 4606 uses the interface buffer 4400 and the exposure apparatus ( 50 ), and a second robot 4604 may be provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

The first robot 4602 and the second robot 4606 each include a hand on which the substrate W is placed, and the hand moves forward and backward, rotates about an axis parallel to the third direction 16, and It may be provided to be movable along three directions (16).

The hands of the index robot 2200 , the first robot 4602 , and the second robot 4606 may all have the same shape as the hand 3420 of the transfer robot 3422 . Optionally, the hand of the robot directly exchanging the substrate W with the transfer plate 3240 of the heat treatment chamber is provided in the same shape as the hand 3420 of the transfer robot 3422, and the hands of the other robot are provided in a different shape. can be

According to one embodiment, the index robot 2200 is provided to directly exchange the substrate W with the heating unit 3230 of the front heat treatment chamber 3200 provided in the application block 30a.

In addition, the transfer robot 3422 provided in the application block 30a and the developing block 30b may be provided to directly transfer the substrate W with the transfer plate 3240 located in the heat treatment chamber 3200 .

The processing block of the above-described substrate processing apparatus 1 has been described as performing a coating processing process and a developing processing process. However, unlike this, the substrate processing apparatus 1 may include only the index module 20 and the processing block 37 without an interface module. In this case, the processing block 37 performs only the coating process, and the film applied on the substrate W may be a spin-on hard mask film (SOH).

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The above-described embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

3500: integrated exhaust unit
3520: integrated exhaust duct
3540: air supply device
3542: supply tank
3544: supply line
3546: air supply valve
3560: controller

Claims (12)

An apparatus for processing a substrate, comprising:
a housing having an interior space;
a heating chamber disposed in the inner space and having a processing space for heating the substrate;
an integrated exhaust unit evacuating the interior space and the processing space;
The integrated exhaust unit,
an integrated exhaust duct installed outside the housing and through which first supply air having a first flow rate always flows;
and an air supply device for supplying a second supply air faster than a first flow rate to the integrated exhaust duct. According to claim 1,
Further comprising a controller for controlling the air supply device,
The controller is
A substrate processing apparatus controlling to supply the secondary supply air to the integrated exhaust duct while the heating process of the substrate is in progress in the processing space. 3. The method of claim 2,
The controller is
A substrate processing apparatus for controlling the supply of the secondary air to be stopped after the heating process is finished. 3. The method of claim 2,
The integrated exhaust unit,
When the first supply air flows through the integrated exhaust duct, it has a first exhaust force,
When the first air supply and the second air supply flow together in the integrated exhaust duct, the substrate processing apparatus has a second exhaust force greater than the first exhaust force. 5. The method of claim 4,
The controller is
and selectively controlling the integrated exhaust unit to have the first exhaust force or the second exhaust force. 3. The method of claim 2,
The heating chamber,
an upper body and a lower body combined with each other to form the processing space therein;
Comprising a lifting unit for adjusting the relative height between the upper body and the lower body by elevating at least one of the upper body and the lower body,
The controller is
When the upper body and the lower body are sealed after the substrate is introduced into the processing space, the substrate processing apparatus controls so that the secondary supply air is supplied to the integrated exhaust duct. 7. The method of claim 6,
The controller is
A substrate processing apparatus for controlling the supply of the secondary air to be stopped before the upper body and the lower body are opened. An apparatus for processing a substrate, comprising:
a housing having an interior space;
a heating chamber disposed in the inner space and having a processing space in which a substrate is heated;
an integrated exhaust unit evacuating the interior space and the processing space;
The integrated exhaust unit,
an integrated exhaust duct installed outside the housing and to which first supply air having a first flow rate is constantly supplied;
Comprising an air supply device for supplying a second supply air faster than the first flow rate to the integrated exhaust duct,
The controller is
controlling that the secondary supply air is supplied to the integrated exhaust duct while the substrate is heated in the processing space;
A substrate processing apparatus for controlling the supply of the secondary air to be stopped after the heating of the substrate is finished. 9. The method of claim 8,
The heating chamber,
an upper body and a lower body combined with each other to form the processing space therein;
A lifting unit for elevating and lowering at least one of the upper body and the lower body to move between a closed position in which the upper body and the lower body are combined and closed and an open position in which the upper body and the lower body are spaced apart and open including,
The controller is
When the upper body and the lower body are located in the blocking position, controlling the secondary supply air to be supplied to the integrated exhaust duct,
When the upper body and the lower body are positioned in the open positions, the substrate processing apparatus controls the supply of the secondary air to be stopped. A method of processing a substrate by evacuating an internal space of a chamber for heat-treating the substrate, the method comprising:
Exhaust the inner space with a first exhaust force,
While the heat treatment is in progress, the substrate processing method is exhausted with a second exhaust force greater than the first exhaust force. 11. The method of claim 10,
The speed of the supply air supplied when the internal space is exhausted with the first exhaust force and the velocity of the supply air supplied when the internal space is exhausted with the second exhaust force are different from each other. 12. The method of claim 11,
When the inner space is exhausted with the first exhaust force, the first supply air flowing at the first flow rate is supplied,
and a second supply air flowing at a second flow rate faster than the first flow rate is provided together with the first air supply when the inner space is exhausted with the second exhaust force.

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