KR20220093086A - 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치 - Google Patents

디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치 Download PDF

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Publication number
KR20220093086A
KR20220093086A KR1020227004603A KR20227004603A KR20220093086A KR 20220093086 A KR20220093086 A KR 20220093086A KR 1020227004603 A KR1020227004603 A KR 1020227004603A KR 20227004603 A KR20227004603 A KR 20227004603A KR 20220093086 A KR20220093086 A KR 20220093086A
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South Korea
Prior art keywords
light emitting
type semiconductor
emitting stack
semiconductor layer
conductivity type
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Ceased
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KR1020227004603A
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English (en)
Korean (ko)
Inventor
장종민
김창연
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서울바이오시스 주식회사
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Priority claimed from US17/076,750 external-priority patent/US11658275B2/en
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Publication of KR20220093086A publication Critical patent/KR20220093086A/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • H01L27/156
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H01L24/31
    • H01L25/0753
    • H01L33/08
    • H01L33/385
    • H01L33/44
    • H01L33/52
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/816Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8312Electrodes characterised by their shape extending at least partially through the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8314Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/833Transparent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates

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KR1020227004603A 2019-10-28 2020-10-28 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치 Ceased KR20220093086A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962926590P 2019-10-28 2019-10-28
US62/926,590 2019-10-28
US17/076,750 US11658275B2 (en) 2019-10-28 2020-10-21 Light emitting device for display and LED display apparatus having the same
US17/076,750 2020-10-21
PCT/KR2020/014768 WO2021085993A1 (ko) 2019-10-28 2020-10-28 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치

Publications (1)

Publication Number Publication Date
KR20220093086A true KR20220093086A (ko) 2022-07-05

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KR1020227004603A Ceased KR20220093086A (ko) 2019-10-28 2020-10-28 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치

Country Status (5)

Country Link
US (2) US12159966B2 (https=)
EP (1) EP4024479A4 (https=)
JP (1) JP7709433B2 (https=)
KR (1) KR20220093086A (https=)
CN (2) CN212934617U (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025239638A1 (ko) * 2024-05-17 2025-11-20 주식회사 오플렉스 발광 다이오드 필름

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7709433B2 (ja) * 2019-10-28 2025-07-16 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子及びそれを有するledディスプレイ装置
CN112133734B (zh) * 2020-09-29 2022-08-30 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
KR20220079170A (ko) * 2020-12-04 2022-06-13 엘지디스플레이 주식회사 발광 소자 및 표시 장치
US20250204092A1 (en) * 2023-12-18 2025-06-19 Innolux Corporation Semiconductor chip and semiconductor device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0811251A2 (en) 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. MULTICOLOR LIGHT EMITTING DIODE, METHODS FOR PRODUCING SAME AND MULTICOLOR DISPLAY INCORPORATING AN ARRAY OF SUCH LEDs
TW522534B (en) * 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
KR100548584B1 (ko) * 2004-07-23 2006-02-02 주식회사 하이닉스반도체 게이트전극 형성방법
JP2007080885A (ja) * 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法
JP5002703B2 (ja) 2010-12-08 2012-08-15 株式会社東芝 半導体発光素子
KR20120092000A (ko) * 2011-02-09 2012-08-20 서울반도체 주식회사 파장변환층을 갖는 발광 소자
US8981391B2 (en) * 2012-06-22 2015-03-17 Industrial Technology Research Institute Display panel with high transparency
JP2014175427A (ja) 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
TW201438188A (zh) 2013-03-25 2014-10-01 美祿科技股份有限公司 堆疊式發光二極體陣列結構
KR101521939B1 (ko) * 2013-12-17 2015-05-20 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
KR102513080B1 (ko) 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
KR102385091B1 (ko) 2017-03-07 2022-04-12 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN106847800A (zh) * 2017-03-28 2017-06-13 山东晶泰星光电科技有限公司 Qfn表面贴装式rgb‑led封装模组及其制造方法
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US12100696B2 (en) * 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11527519B2 (en) * 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US10892297B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US10886327B2 (en) * 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) * 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) * 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11114499B2 (en) * 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10862006B2 (en) * 2018-08-17 2020-12-08 Seoul Viosys Co., Ltd. Light emitting device
US11476236B2 (en) * 2018-11-07 2022-10-18 Seoul Viosys Co., Ltd. Display apparatus
US11508876B2 (en) * 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
US11152553B2 (en) * 2019-01-15 2021-10-19 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
US11450648B2 (en) * 2019-03-19 2022-09-20 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
US11587914B2 (en) * 2019-05-14 2023-02-21 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same
MX2021013716A (es) * 2019-05-14 2021-11-25 Seoul Viosys Co Ltd Chip led y metodo de manufactura del mismo.
DE24206108T1 (de) * 2019-06-19 2025-05-28 Jade Bird Display (shanghai) Limited Systeme und verfahren für koaxiale mehrfarbige led
US11810944B2 (en) * 2019-10-23 2023-11-07 Seoul Viosys Co., Ltd. LED display apparatus
JP7709433B2 (ja) * 2019-10-28 2025-07-16 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子及びそれを有するledディスプレイ装置
US11817435B2 (en) * 2019-10-28 2023-11-14 Seoul Viosys Co., Ltd. Light emitting device for display and LED display apparatus having the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025239638A1 (ko) * 2024-05-17 2025-11-20 주식회사 오플렉스 발광 다이오드 필름

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Publication number Publication date
EP4024479A4 (en) 2023-10-11
EP4024479A1 (en) 2022-07-06
US20250023006A1 (en) 2025-01-16
CN212934617U (zh) 2021-04-09
JP2023501269A (ja) 2023-01-18
US12159966B2 (en) 2024-12-03
JP7709433B2 (ja) 2025-07-16
CN114600240A (zh) 2022-06-07
US20230378412A1 (en) 2023-11-23

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