JP7709433B2 - ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置 - Google Patents

ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置

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Publication number
JP7709433B2
JP7709433B2 JP2022525583A JP2022525583A JP7709433B2 JP 7709433 B2 JP7709433 B2 JP 7709433B2 JP 2022525583 A JP2022525583 A JP 2022525583A JP 2022525583 A JP2022525583 A JP 2022525583A JP 7709433 B2 JP7709433 B2 JP 7709433B2
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JP
Japan
Prior art keywords
light
type semiconductor
emitting stack
light emitting
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022525583A
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English (en)
Japanese (ja)
Other versions
JP2023501269A (ja
JP2023501269A5 (https=
JPWO2021085993A5 (https=
Inventor
ジョン・ミン・ジャン
チャン・ヨン・キム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/076,750 external-priority patent/US11658275B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of JP2023501269A publication Critical patent/JP2023501269A/ja
Publication of JP2023501269A5 publication Critical patent/JP2023501269A5/ja
Publication of JPWO2021085993A5 publication Critical patent/JPWO2021085993A5/ja
Application granted granted Critical
Publication of JP7709433B2 publication Critical patent/JP7709433B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2022525583A 2019-10-28 2020-10-28 ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置 Active JP7709433B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962926590P 2019-10-28 2019-10-28
US62/926,590 2019-10-28
US17/076,750 US11658275B2 (en) 2019-10-28 2020-10-21 Light emitting device for display and LED display apparatus having the same
US17/076,750 2020-10-21
PCT/KR2020/014768 WO2021085993A1 (ko) 2019-10-28 2020-10-28 디스플레이용 발광 소자 및 그것을 갖는 led 디스플레이 장치

Publications (4)

Publication Number Publication Date
JP2023501269A JP2023501269A (ja) 2023-01-18
JP2023501269A5 JP2023501269A5 (https=) 2023-11-09
JPWO2021085993A5 JPWO2021085993A5 (https=) 2023-11-09
JP7709433B2 true JP7709433B2 (ja) 2025-07-16

Family

ID=75312219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022525583A Active JP7709433B2 (ja) 2019-10-28 2020-10-28 ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置

Country Status (5)

Country Link
US (2) US12159966B2 (https=)
EP (1) EP4024479A4 (https=)
JP (1) JP7709433B2 (https=)
KR (1) KR20220093086A (https=)
CN (2) CN212934617U (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7709433B2 (ja) * 2019-10-28 2025-07-16 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置
CN112133734B (zh) * 2020-09-29 2022-08-30 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
KR20220079170A (ko) * 2020-12-04 2022-06-13 엘지디스플레이 주식회사 발광 소자 및 표시 장치
US20250204092A1 (en) * 2023-12-18 2025-06-19 Innolux Corporation Semiconductor chip and semiconductor device
KR20250164979A (ko) * 2024-05-17 2025-11-25 주식회사 오플렉스 발광 다이오드 필름

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US20030047742A1 (en) 2001-09-11 2003-03-13 Hen Chang Hsiu Package structure of full color LED form by overlap cascaded die bonding
JP2003282957A (ja) 2002-03-20 2003-10-03 Nichia Chem Ind Ltd フリップチップ型半導体素子及びその製造方法
JP2007080885A (ja) 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法
CN106847800A (zh) 2017-03-28 2017-06-13 山东晶泰星光电科技有限公司 Qfn表面贴装式rgb‑led封装模组及其制造方法
JP2019509636A (ja) 2016-03-09 2019-04-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法
US20190165207A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
US20190189681A1 (en) 2017-12-14 2019-06-20 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
JP2021504752A (ja) 2017-11-27 2021-02-15 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． ディスプレイ用ｌｅｄユニットおよびこれを有するディスプレイ装置

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EP0811251A2 (en) 1995-12-21 1997-12-10 Koninklijke Philips Electronics N.V. MULTICOLOR LIGHT EMITTING DIODE, METHODS FOR PRODUCING SAME AND MULTICOLOR DISPLAY INCORPORATING AN ARRAY OF SUCH LEDs
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JP5002703B2 (ja) 2010-12-08 2012-08-15 株式会社東芝 半導体発光素子
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JP2014175427A (ja) 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
TW201438188A (zh) 2013-03-25 2014-10-01 美祿科技股份有限公司 堆疊式發光二極體陣列結構
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US11508876B2 (en) * 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
US11152553B2 (en) * 2019-01-15 2021-10-19 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
US11450648B2 (en) * 2019-03-19 2022-09-20 Seoul Viosys Co., Ltd. Light emitting device package and application thereof
US11587914B2 (en) * 2019-05-14 2023-02-21 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same
MX2021013716A (es) * 2019-05-14 2021-11-25 Seoul Viosys Co Ltd Chip led y metodo de manufactura del mismo.
DE24206108T1 (de) * 2019-06-19 2025-05-28 Jade Bird Display (shanghai) Limited Systeme und verfahren für koaxiale mehrfarbige led
US11810944B2 (en) * 2019-10-23 2023-11-07 Seoul Viosys Co., Ltd. LED display apparatus
JP7709433B2 (ja) * 2019-10-28 2025-07-16 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子及びそれを有するｌｅｄディスプレイ装置
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Publication number Priority date Publication date Assignee Title
US20030047742A1 (en) 2001-09-11 2003-03-13 Hen Chang Hsiu Package structure of full color LED form by overlap cascaded die bonding
JP2003282957A (ja) 2002-03-20 2003-10-03 Nichia Chem Ind Ltd フリップチップ型半導体素子及びその製造方法
JP2007080885A (ja) 2005-09-09 2007-03-29 New Japan Chem Co Ltd 光半導体用封止剤、光半導体及びその製造方法
JP2019509636A (ja) 2016-03-09 2019-04-04 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス部品およびオプトエレクトロニクス部品を製造するための方法
CN106847800A (zh) 2017-03-28 2017-06-13 山东晶泰星光电科技有限公司 Qfn表面贴装式rgb‑led封装模组及其制造方法
US20190165207A1 (en) 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Led unit for display and display apparatus having the same
JP2021504752A (ja) 2017-11-27 2021-02-15 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． ディスプレイ用ｌｅｄユニットおよびこれを有するディスプレイ装置
US20190189681A1 (en) 2017-12-14 2019-06-20 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
JP2021507515A (ja) 2017-12-14 2021-02-22 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光積層構造体およびそれを備えたディスプレイ素子

Also Published As

Publication number Publication date
EP4024479A4 (en) 2023-10-11
EP4024479A1 (en) 2022-07-06
KR20220093086A (ko) 2022-07-05
US20250023006A1 (en) 2025-01-16
CN212934617U (zh) 2021-04-09
JP2023501269A (ja) 2023-01-18
US12159966B2 (en) 2024-12-03
CN114600240A (zh) 2022-06-07
US20230378412A1 (en) 2023-11-23

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