KR20220087887A - Apparatus for treating substrate and method for treating substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. In one embodiment, a substrate processing apparatus. a substrate supporting unit supporting the substrate and rotating the substrate; a processing container provided in a cylindrical shape with an open top and provided to surround the substrate support unit; a liquid supply unit including one or more liquid supply nozzles and supplying a processing liquid and a rinse liquid to the substrate supported by the substrate support unit; and a laser beam irradiation unit for heating the substrate by irradiating a laser beam to the substrate, wherein the laser beam irradiation unit has a higher intensity of an edge portion of the substrate supported by the substrate support unit than other portions. irradiate the beam

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

In order to manufacture a semiconductor device or a liquid crystal display, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on a substrate. Among them, the etching process or the cleaning process is a process for removing unnecessary regions of the thin film formed on the substrate. A high selectivity for the thin film, high etch rate, and etch uniformity are required. An etch selectivity and etch uniformity are required.

In general, in the etching process or cleaning process of the substrate, a treatment solution treatment step, a rinse treatment step, and a drying treatment step are sequentially performed. In one example, in the treatment liquid treatment step, a treatment liquid for etching the thin film formed on the substrate or removing foreign substances on the substrate is supplied to the substrate to form a puddle, and then heating the puddle of the treatment liquid to heat the treatment liquid to promote etching, and a rinse solution such as pure water is supplied on the substrate in the rinse treatment step.

As in the above-described example, in the etching process or cleaning process using puddle formation, rather than continuously supplying the treatment liquid during the process, the concentration of the treatment liquid changes as the reaction continues, resulting in a problem in that the etching ability is lowered. . After forming the puddle and processing for a certain period of time, the used treatment solution is rinsed and dried, and the step of re-forming the puddle with a new treatment solution is repeated.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method in which complete drying of a rinse liquid is unnecessary in a process of re-forming a processing liquid puddle.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method in which a risk of pattern leaning that may occur in a process of reforming a processing liquid puddle is reduced.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of reducing processing cost and processing time in a process using a processing liquid puddle.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides an apparatus for processing a substrate. In one embodiment, a substrate processing apparatus. a substrate supporting unit supporting the substrate and rotating the substrate; a processing container provided in a cylindrical shape with an open top and provided to surround the substrate support unit; a liquid supply unit including one or more liquid supply nozzles and supplying a processing liquid and a rinse liquid to the substrate supported by the substrate support unit; and a laser beam irradiation unit for heating the substrate by irradiating a laser beam to the substrate, wherein the laser beam irradiation unit has a higher intensity of an edge portion of the substrate supported by the substrate support unit than other portions. irradiate the beam

In one embodiment, the treatment liquid may be an aqueous solution of phosphoric acid.

In an embodiment, the rinse solution may be pure water.

In one embodiment, the laser beam irradiated from the laser beam irradiation unit is provided with a transmissive material, and a window member provided under the substrate; a chuck pin supporting a side of the substrate and spaced apart from the window member by a predetermined distance; a spin housing coupled to the window member and penetrating vertically to provide a path through which the laser beam is transmitted; and a driving member for rotating the spin housing, and the laser beam irradiation unit may be provided under the window member.

In an embodiment, the laser beam irradiation unit includes a lens module that refracts the laser beam and processes the laser beam into a shape corresponding to the substrate, including at least one lens unit, The lens unit and the end of the laser beam transmitting member may be provided so that a distance can be adjusted.

In an embodiment, the apparatus further includes a controller, the controller comprising: a first process of supplying the processing liquid to the substrate to form a processing liquid puddle; a second process of heating the substrate and the processing liquid puddle; a third step of supplying the rinse solution to the substrate to replace the treatment solution with the rinse solution; A fourth process of heating the edge portion of the substrate on which the rinse solution remains to a higher temperature than other portions may be performed, and the first to third processes may be sequentially further performed after the fourth process.

In an embodiment, the heating in the second process uses a first laser beam having a uniform intensity with respect to the entire surface of the substrate, and in the heating in the fourth process, the intensity of the edge portion of the substrate is A second laser beam may be used that is higher than the other portions of , wherein an intensity of the edge portion is sufficient to evaporate the rinse solution, and an intensity of the other portion does not evaporate the rinse solution.

The present invention provides a facility for processing a substrate. In one embodiment, there is provided a substrate processing facility, the substrate processing apparatus; and a laser beam generator configured to generate a laser beam supplied to the substrate through a laser beam irradiation unit.

In an embodiment, the laser beam generator comprises: a laser source unit for outputting a laser beam from energy obtained from external power; a beam shaper for converting the laser beam output from the laser source unit into a set beam shape; It may include a beam expander that expands the laser beam shaped by the beam shaper in the form of a parallel light having a predetermined diameter.

In an embodiment, the laser beam irradiation unit may be optically connected to the laser beam generator by a laser beam transmitting member.

The present invention provides a method of processing a substrate. In one embodiment, the substrate processing method. a first process of supplying a processing liquid to the substrate to form a processing liquid puddle; a second process of heating the substrate and the processing liquid puddle; a third step of supplying a rinse solution to the substrate to replace the treatment solution with the rinse solution; A fourth process of heating the edge portion of the substrate on which the rinse liquid remains to a higher temperature than other portions is performed, and after the fourth process, the first to third processes are further sequentially performed.

In an embodiment, the heating in the second process uses a first laser beam having a uniform intensity with respect to the entire surface of the substrate, and in the heating in the fourth process, the intensity of the edge portion of the substrate is A second laser beam may be used that is higher than the other portions of , wherein an intensity of the edge portion is sufficient to evaporate the rinse solution, and an intensity of the other portion does not evaporate the rinse solution.

In one embodiment, the treatment liquid may be an aqueous solution of phosphoric acid.

In an embodiment, the rinse solution may be pure water.

In an embodiment, the heating of the substrate is made by a laser beam, the laser beam is transmitted to the substrate by the laser beam irradiation unit, and the laser beam irradiation unit includes one or more lens units , a lens module for processing the laser beam into a shape corresponding to the substrate by refracting the laser beam, wherein the lens part of the lens module and an end of the laser beam transmitting member are provided so as to be adjustable in distance, In the heating of the second process, the end of the laser beam transmitting member is heated to a first distance from the lens unit, and the heating of the fourth process is a second step in which the end of the laser beam transmitting member is shorter than the first distance. It can be done in a distance state.

In an embodiment, the heating of the substrate is made by a laser beam, the laser beam is transmitted to the substrate by the laser beam irradiation unit, and a laser beam supplied to the substrate through the laser beam irradiation unit is generated by a laser beam generator, and the laser beam generator may convert a laser beam output from energy obtained from external power into a set beam shape and transmit it to the laser beam irradiation unit.

In an embodiment, the laser beam irradiation unit may be optically connected to the laser beam generator by a laser beam transmitting member.

In one embodiment, when the processing of the substrate through the processing liquid is completed, using a supercritical fluid, the substrate processing method for drying the substrate.

In an embodiment, before drying the substrate using the supercritical fluid, the rinsing liquid may be substituted with the anti-leaf liquid to form a liquid film on the surface of the substrate using the anti-leaf liquid.

According to various embodiments of the present invention, it is possible to efficiently process the substrate.

According to various embodiments of the present disclosure, complete drying of the rinse solution is unnecessary in the process of reforming the treatment solution puddle.

According to various embodiments of the present disclosure, the risk of pattern leaning that may occur in the process of reforming the treatment liquid puddle may be reduced.

According to various embodiments of the present disclosure, it is possible to reduce the processing cost and processing time in the process using the processing liquid puddle.

According to various embodiments of the present disclosure, when the rinse solution of the edge portion of the substrate is dried, a pre-heating effect of the edge region of the substrate is accompanied, so that temperature compensation of the edge region can be expected.

Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art from the present specification and accompanying drawings.

1 is a plan view showing a substrate processing facility 1 according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating the substrate processing apparatus 300 according to the first embodiment provided in the process chamber 260 of FIG. 1 .
FIG. 3 is a schematic diagram of a laser beam generator 500 that provides a laser beam to the process chamber 260 of FIG. 1 .
4 is a side view of the front beam irradiation unit 400-1 according to the first embodiment.
FIG. 5 schematically shows a cross-sectional view of the front beam irradiation unit 400-1 according to the first embodiment of FIG. 4 according to a first use state.
6 schematically shows a cross-sectional view according to a second use state of the front beam irradiation unit 400 - 1 according to the first embodiment of FIG. 4 .
7 illustrates a change in laser beam intensity according to the adjustment of the distance between the end of the laser beam transmitting member 443 and the lens unit 442b.
8 is a side view of the front beam irradiation unit 400 - 2 according to the second embodiment.
9 is a view showing the intensity of each area of a laser irradiated to a 300 mm wafer according to an embodiment of the present invention.
10 is a view showing the intensity of each area of a laser irradiated to a 300 mm wafer according to another embodiment of the present invention.
11 illustrates a state in which a processing liquid puddle is formed on a substrate and heated according to a substrate processing method according to an embodiment of the present invention.
12 is a diagram illustrating a state in which a rinse solution is substituted for a treatment solution puddle formed on a substrate according to a method for processing a substrate according to an embodiment of the present invention.
13 illustrates a state in which the rinse solution at the edge portion of the substrate is dried by heating the edge portion of the substrate after replacing the treatment liquid puddle with the rinse liquid according to the substrate processing method according to an embodiment of the present invention; did it
14 is a diagram illustrating a state in which the edge portion of the substrate is heated and dried by heating the rinse solution remaining on the substrate according to the substrate processing method according to an embodiment of the present invention, and the water film on the edge portion is removed.
FIG. 15 is a view for explaining FIG. 13, and it is a view for explaining a phenomenon (Marangoni effect) in which the water film moves to the center of the wafer having a relatively high surface tension due to a decrease in the surface tension of the edge part according to the heating and drying of the edge part. .

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those of ordinary skill in the art to which the present invention pertains can easily implement them. However, the present invention may be implemented in several different forms and is not limited to the embodiments described herein. In addition, in describing a preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and functions.

"Including" a certain component means that other components may be further included, rather than excluding other components, unless otherwise stated. Specifically, terms such as “comprise” or “have” are intended to designate that a feature, number, step, action, component, part, or combination thereof described in the specification is present, and includes one or more other features or It should be understood that the existence or addition of numbers, steps, operations, components, parts, or combinations thereof does not preclude the possibility of addition.

The singular expression includes the plural expression unless the context clearly dictates otherwise. In addition, shapes and sizes of elements in the drawings may be exaggerated for clearer description.

The term “and/or” includes any one and all combinations of one or more of those listed items. In addition, in the present specification, "connected" means not only when member A and member B are directly connected, but also when member A and member B are indirectly connected with member C interposed between member A and member B. do.

Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.

In this embodiment, a process of etching a substrate using a treatment liquid will be described as an example. However, the present embodiment is not limited to the etching process, and may be variously applied to a substrate processing process using a liquid, such as a cleaning process, an ashing process, and a developing process.

Here, the substrate is a comprehensive concept including all substrates used for manufacturing semiconductor devices, flat panel displays (FPDs), and other articles in which circuit patterns are formed on thin films. Examples of the substrate W include a silicon wafer, a glass substrate, an organic substrate, and the like.

Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 20 .

1 is a plan view showing a substrate processing facility 1 according to an embodiment of the present invention. Referring to FIG. 1 , a substrate processing facility 1 includes an index module 10 and a process processing module 20 . The index module 10 includes a load port 120 and a transfer frame 140 . The load port 120 , the transfer frame 140 , and the process processing module 20 are sequentially arranged in a line.

Hereinafter, a direction in which the load port 120 , the transfer frame 140 , and the process processing module 20 are arranged is referred to as a first direction 12 , and when viewed from the top, is perpendicular to the first direction 12 . The direction is referred to as a second direction 14 , and a direction perpendicular to a plane including the first direction 12 and the second direction 14 is referred to as a third direction 16 .

The carrier 18 in which the substrate W is accommodated is seated on the load port 120 . A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14 . The number of load ports 120 may increase or decrease according to process efficiency and footprint conditions of the process processing module 20 . A plurality of slots (not shown) are formed in the carrier 18 for accommodating the substrates W in a horizontally arranged state with respect to the ground. A Front Opening Unifed Pod (FOUP) may be used as the carrier 18 .

The process module 20 includes a buffer unit 220 , a transfer chamber 240 , and a process chamber 260 .

The transfer chamber 240 is disposed in a longitudinal direction parallel to the first direction (12). A plurality of process chambers 260 may be disposed on one side or both sides of the transfer chamber 240 . At one side and the other side of the transfer chamber 240 , the plurality of process chambers 260 may be provided to be symmetrical with respect to the transfer chamber 240 . Some of the plurality of process chambers 260 are disposed along the longitudinal direction of the transfer chamber 240 . In addition, some of the plurality of process chambers 260 are disposed to be stacked on each other. That is, at one side of the transfer chamber 240 , the process chamber 260 may be arranged in an A×B arrangement. Here, A is the number of process chambers 260 provided in a line along the first direction 12 , and B is the number of process chambers 260 provided in a line along the third direction 16 . When four or six process chambers 260 are provided on one side of the transfer chamber 240 , the plurality of process chambers 260 may be arranged in an arrangement of 2 X 2 or 3 X 2 . The number of process chambers 260 may increase or decrease. Unlike the above, the process chamber 260 may be provided only on one side of the transfer chamber 240 . In addition, the process chamber 260 may be provided as a single layer on one side and both sides of the transfer chamber 240 .

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240 . The buffer unit 220 provides a space in which the substrate W stays before the substrate W is transferred between the transfer chamber 240 and the transfer frame 140 . A slot (not shown) in which the substrate W is placed is provided in the buffer unit 220 . A plurality of slots (not shown) are provided to be spaced apart from each other in the third direction 16 . The buffer unit 220 has a surface facing the transfer frame 140 and a surface facing the transfer chamber 240 are opened.

The transfer frame 140 transfers the substrate W between the carrier 130 seated on the load port 120 and the buffer unit 220 . The transfer frame 140 is provided with an index rail 142 and an index robot 144 . The index rail 142 is provided in a longitudinal direction parallel to the second direction 14 . The index robot 144 is installed on the index rail 142 and moves linearly in the second direction 14 along the index rail 142 . The index robot 144 includes a base 144a, a body 144b, and an index arm 144c. The base 144a is installed to be movable along the index rail 142 . The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. In addition, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward with respect to the body 144b. A plurality of index arms 144c are provided to be individually driven. The index arms 144c are arranged to be stacked apart from each other in the third direction 16 . Some of the index arms 144c are used when transferring the substrate W from the process processing module 20 to the carrier 18 , and the other part of the index arms 144c is used for transferring the substrate W from the carrier 18 to the process processing module 20 . ) can be used to return This can prevent particles generated from the substrate W before the process from adhering to the substrate W after the process in the process of the index robot 144 loading and unloading the substrate W.

The transfer chamber 240 transfers the substrate W between the buffer unit 220 and the process chamber 260 and between the process chambers 260 . A guide rail 242 and a main robot 244 are provided in the transfer chamber 240 . The guide rail 242 is disposed so that its longitudinal direction is parallel to the first direction 12 . The main robot 244 is installed on the guide rail 242 and linearly moved along the first direction 12 on the guide rail 242 . The main robot 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is installed to be movable along the guide rail 242 . The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. In addition, the body 244b is provided to be rotatable on the base 244a. The main arm 244c is coupled to the body 244b, which is provided to be movable forward and backward with respect to the body 244b. A plurality of main arms 244c are provided to be individually driven. The main arms 244c are arranged to be stacked in a spaced apart state from each other in the third direction 16 .

A substrate processing apparatus 300 for performing a liquid processing process on the substrate W is provided in the process chamber 260 . The substrate processing apparatus 300 may have a different structure according to the type of liquid processing process to be performed. Alternatively, the substrate processing apparatus 300 in each process chamber 260 may have the same structure. Optionally, the plurality of process chambers 260 are divided into a plurality of groups, and the substrate processing apparatuses 300 in the process chamber 260 belonging to the same group are the same as each other, and the substrates in the process chamber 260 belonging to different groups. The structures of the processing device 300 may be provided to be different from each other.

FIG. 2 is a cross-sectional view illustrating the substrate processing apparatus 300 according to the first embodiment provided in the process chamber 260 of FIG. 1 . Referring to FIG. 2 , the substrate processing apparatus 300 includes a processing container 320 , a substrate support unit 340 , an elevation unit 360 , a liquid supply unit 390 , and a controller (not shown).

The processing container 320 has a cylindrical shape with an open top. The processing container 320 includes a first collection container 321 and a second collection container 322 . Each of the recovery tanks 321 and 322 recovers different treatment liquids from among the treatment liquids used in the process. The first collection container 321 is provided in an annular ring shape surrounding the substrate support unit 340 . The second collection container 322 is provided in an annular ring shape surrounding the substrate support unit 340 . In one embodiment, the first collection container 321 is provided in the shape of an annular ring surrounding the second collection container 322 . The second collection container 322 may be provided by being inserted into the first collection container 321 . The height of the second collection bin 322 may be higher than the height of the first collection bin 321 . The second collection container 322 may include a first guard part 326 and a second guard part 324 . The first guard part 326 may be provided at the top of the second collection container 322 . The first guard part 326 is formed to extend toward the substrate support unit 340 , and the first guard part 326 may be formed to be inclined upward toward the substrate support unit 340 . In the second collection container 322 , the second guard part 324 may be provided at a position spaced downward from the first guard part 326 . The second guard part 324 is formed to extend toward the substrate support unit 340 , and the second guard part 324 may be formed to be inclined upward toward the substrate support unit 340 . Between the first guard part 326 and the second guard part 324, it functions as a first inlet 324a through which the processing liquid flows. A second inlet 322a is provided at a lower portion of the second guard portion 324 . The first inlet 324a and the second inlet 322a may be located at different heights. A hole (not shown) is formed in the second guard part 324 so that the processing liquid flowing into the first inlet 324a flows into the second recovery line 322b provided at the lower part of the second recovery container 322 . can do. A hole (not shown) of the second guard part 324 may be formed at a position with the lowest height in the second guard part 324 . The processing liquid recovered to the first recovery barrel 321 is configured to flow into the first recovery line 321b connected to the bottom surface of the first recovery barrel 321 . The treatment liquids introduced into each of the recovery troughs 321 and 322 may be provided to an external treatment liquid regeneration system (not shown) through the respective recovery lines 321b and 322b to be reused.

The lifting unit 360 linearly moves the processing container 320 in the vertical direction. As an example, the lifting unit 360 is coupled to the second collection container 322 of the processing container 320 and moves the second collection container 322 up and down, so that the processing container ( 320) can be changed. The lifting unit 360 includes a bracket 362 , a moving shaft 364 , and a driver 366 . The bracket 362 is fixedly installed on the outer wall of the processing container 320 , and a moving shaft 364 , which is moved in the vertical direction by the driver 366 , is fixedly coupled to the bracket 362 . When the substrate W is loaded into or unloaded from the substrate support unit 340 , the upper portion of the substrate support unit 340 protrudes to the upper portion of the processing vessel 320 , specifically the first The second collection tube 322 of the processing container 320 is lowered so as to protrude higher than the guard portion 326 . In addition, when the process is performed, the height of the processing container 320 is adjusted so that the processing liquid can be introduced into the predetermined collection troughs 321 and 322 according to the type of the processing liquid supplied to the substrate W. Optionally, the lifting unit 360 may move the substrate supporting unit 340 in the vertical direction instead of the processing vessel 320 . Optionally, the elevating unit 360 may move the entire processing container 320 to be elevating and lowering in the vertical direction. The elevating unit 360 is provided to adjust the relative heights of the processing vessel 320 and the substrate support unit 340 , and if it has a configuration capable of adjusting the relative heights of the processing vessel 320 and the substrate support unit 340 . , the embodiment of the processing vessel 320 and the lifting unit 360 may be provided in various structures and methods, depending on the design.

The substrate support unit 340 supports the substrate W and rotates the substrate W during the process.

The substrate support unit 340 includes a window member 348 , a spin housing 342 , a chuck pin 346 , and a driving member 349 .

The window member 348 is positioned below the substrate W. The window member 348 may be provided in a shape substantially corresponding to that of the substrate W. As shown in FIG. For example, when the substrate S is a circular wafer, the window member 348 may be provided in a substantially circular shape. The window member 348 may have the same diameter as the substrate W, a smaller diameter than the substrate W, or a larger diameter than the substrate W. The window member 348 is a configuration that allows the laser beam to pass through and reaches the substrate W and protects the configuration of the substrate support unit 340 from a chemical, and may be provided in various sizes and shapes according to design. The support member 113 may have a diameter larger than that of the wafer.

The window member 348 may be made of a material having high light transmittance. Accordingly, the laser beam irradiated from the beam irradiation unit 400 may pass through the window member 348 . The window member 348 may be a material having excellent corrosion resistance so as not to react with the chemical solution. For this purpose, the material of the window member 348 may be, for example, quartz, glass, or sapphire.

The spin housing 342 may be provided on the bottom surface of the window member 348 . The spin housing 342 supports the edge of the window member 348 . In the spin housing 342 , the rotation member 111 provides an empty space penetrating in the vertical direction. The empty space formed by the spin housing 342 may have an inner diameter increasing toward the window member 348 from the portion adjacent to the beam irradiation unit 400 . The spin housing 342 may have a cylindrical shape in which an inner diameter increases from the bottom to the top. The spin housing 342 can be irradiated to the substrate W without being interfered by the spin housing 342 with the laser beam generated by the beam irradiation unit 400 to be described later due to the empty space therein. The connection portion between the spin housing 342 and the window member 348 may have a sealing structure so that the chemical solution supplied to the substrate W does not penetrate in the beam irradiation unit 400 direction.

The driving member 349 may be coupled to the spin housing 342 to rotate the spin housing 342 . The driving member 349 may be any as long as it can rotate the spin housing 342 . For example, the driving member 349 may be provided as a hollow motor. According to an embodiment, the driving member 349 includes a stator 349a and a rotor 349b. The stator 349a is provided fixed in one position, and the rotor 349b is coupled to the spin housing 342 . According to the illustrated embodiment, the rotor 349b is provided in the inner diameter, the stator 349a is shown in the hollow motor provided in the outer diameter. According to the illustrated figure, the bottom of the spin housing 342 may be coupled to the rotor 349b and rotated by the rotation of the rotor 349b. When a hollow motor is used as the driving member 349, the narrower the bottom of the spin housing 342 is provided, the smaller the hollow of the hollow motor can be selected, thereby reducing the manufacturing cost. According to an embodiment, the stator 349a of the driving member 349 may be provided by being fixedly coupled to a support surface on which the processing vessel 320 is supported. According to an embodiment, a cover member 343 for protecting the driving member 349 from the chemical may be further included.

The liquid supply unit 390 is configured to discharge a chemical from the upper portion of the substrate W to the substrate W, and may include one or more chemical liquid discharge nozzles. The liquid supply unit 390 may pump and transport the chemical stored in a storage tank (not shown) to discharge the chemical to the substrate W through the chemical discharge nozzle. The liquid supply unit 390 may include a driving unit to be movable between a process position directly above the center of the substrate W and a standby position outside the substrate W.

The chemical solution supplied from the liquid supply unit 390 to the substrate W may vary according to a substrate processing process. When the substrate treatment process is a silicon nitride film etching process, the chemical solution may be a chemical solution including phosphoric acid (H3PO4). The liquid supply unit 390 includes a deionized water (DIW) supply nozzle for rinsing the substrate surface after the etching process, an isopropyl alcohol (IPA) ejection nozzle for performing a drying process after rinsing, and nitrogen (N2) ejection. It may further include a nozzle. Although not shown, the liquid supply unit 390 may include a nozzle moving member (not shown) that supports the chemical liquid discharge nozzle and may move the chemical liquid discharge nozzle. The nozzle moving member (not shown) may include a support shaft (not shown), an arm (not shown), and a driver (not shown). A support shaft (not shown) is located on one side of the processing vessel 320 . The support shaft (not shown) has a rod shape whose longitudinal direction faces the third direction. The support shaft (not shown) is provided to be rotatable by a driver (not shown). The arm (not shown) is coupled to the upper end of the support shaft (not shown). The arm (not shown) may extend vertically from the support shaft (not shown). The chemical liquid discharge nozzle is fixedly coupled to the end of the arm (not shown). As the support shaft (not shown) rotates, the chemical liquid discharge nozzle is swingable together with the arm (not shown). The chemical liquid discharge nozzle may be swing-moved to move to a process position and a standby position. Optionally, the support shaft (not shown) may be provided so as to be able to move up and down. In addition, the arm (not shown) may be provided to be movable forward and backward in the longitudinal direction thereof.

The beam irradiation unit 400 is a configuration for irradiating a laser beam to the substrate (W). The beam irradiation unit 400 may be positioned at a lower surface than the window member 348 in the substrate support unit 340 . The beam irradiation unit 400 may irradiate a laser beam toward the substrate W positioned on the substrate support unit 340 . The laser beam irradiated from the beam irradiation unit 400 may pass through the window member 348 of the substrate support unit 340 to be irradiated onto the substrate W. Accordingly, the substrate W may be heated to a set temperature.

The beam irradiation unit 400 may be configured to uniformly irradiate a laser beam to the entire surface of the substrate W. The beam irradiation unit 400 is sufficient as long as it can uniformly irradiate the laser beam to the entire surface of the substrate W, but the front beam irradiation unit 400-1 according to the first embodiment in FIGS. 4 to 6 to be described later. , the front beam irradiation unit 400 - 2 according to the second embodiment will be described in FIG. 8 .

The laser beam generator 500 may generate a laser beam. The laser beam generator 500 may generate a laser beam having a wavelength that the substrate W can easily absorb. According to an embodiment, the laser beam generator 500 may be provided as a high output device of 4kW to 5kW.

3 is a schematic diagram of a laser beam generator 500 that provides a laser beam to the process chamber 260 of FIG. 1 . Referring to FIG. 3 , the laser beam generator 500 may include a laser source unit 510 , a beam shaper 520 , and a beam expander 530 . The laser source unit 510 outputs a laser beam from energy obtained from power. The beam shaper 520 converts the profile of the laser beam output from the laser source unit 510 . For example, the beam shaper 520 shapes the input laser beam into a set beam shape. In an embodiment, a laser beam in the form of a Gaussian beam is input to the beam shaper 520 and converted into a parallel flattop beam or a truncated Gaussian beam, etc. have. The beam expander 530 serves to expand the laser beam in the form of parallel light having a predetermined diameter. For example, the beam expander 530 may include a plurality of lenses to change the diameter of the laser beam. The beam generated by the laser source unit 510 may be output through the beam shaper 520 and/or the beam expander 530 . For example, the beam generated by the laser source unit 510 may pass through the beam shaper 520 and the beam expander 530 , pass only the beam shaper 520 , or pass only the beam expander 530 . In addition, according to an example, when the annular beam irradiation unit 700 receives the annular laser beam generated from the laser beam generator 500, the annular beam irradiation unit 700 does not need to shape the laser beam in an annular shape. , the annular beam size adjusting module 710 may be provided in a manner different from the above-described example for adjusting the diameter of the annular laser beam. The front beam irradiation unit 400 - 1 according to the first embodiment will be described with reference to FIGS. 4 to 6 . 4 is a side view of the front beam irradiation unit 400-1 according to the first embodiment. Referring to FIG. 4 , the front beam irradiation unit 400 - 1 may include a lens module 442 . The front beam irradiation unit 400 - 1 may receive a laser beam from the laser beam transmitting member 443 . FIG. 5 schematically illustrates a cross-sectional view of the front beam irradiation unit 400-1 according to the first embodiment of FIG. 4 according to a first use state. Referring further to FIG. 5 , the lens module 442 includes a lens part 442b and a barrel part 442a for supporting and accommodating the lens part 442b. The lens unit 442b may be formed of a combination of a plurality of lenses. As an example, it may include a concave lens or a convex lens. For example, the lens unit 442b may include a first lens 442b-1, a second lens 442b-2, and a third lens 442b-3. The first lens 442b - 1 may have a concave upper surface to emit a laser beam. The second lens 442b - 2 may have a convex upper surface and a concave lower surface to emit a laser beam. The third lens 442b - 3 may have a convex lower surface to emit a laser beam. In the drawings, the lens unit 442b is configured by a combination of three lenses, but this is for convenience of explanation, and the number and types of lenses constituting the lens unit 442b may vary according to the design of the substrate processing apparatus 300 . can be selected.

The laser beam transmitting member 443 is configured to transmit the laser beam generated from the laser beam generator 500 to the lens module 442 . The laser beam transmitting member 443 may be, for example, an optical fiber. The laser beam transmitting member 443 may have an end coupled to the fastening member 441 to be coupled to the lens module 442 through the fastening member 441 . The fastening member 441 is provided to adjust the distance between the end of the laser beam transmitting member 443 and the lens unit 442b.

6 schematically shows a cross-sectional view according to a second use state of the front beam irradiation unit 400 - 1 according to the first embodiment of FIG. 4 . Referring to FIG. 6 , the distance between the end of the laser beam transmitting member 443 and the lens unit 442b is provided to be greater compared to the first use state of FIG. 5 . According to the second use state of FIG. 6 , the laser beam may be distributed more widely than the first use state of FIG. 5 , and the intensity of the laser beam may be adjusted.

7 illustrates a change in laser beam intensity according to the adjustment of the distance between the end of the laser beam transmitting member 443 and the lens unit 442b. The Y-axis (vertical axis) represents the magnitude of the intensity, and the X-axis (horizontal axis) represents the position of the laser beam with respect to the 300 mm wafer. As the end of the laser beam transmitting member 443 moves and approaches the lens unit 442b, the intensity of the edge region of the substrate increases and the intensity of the central region of the substrate decreases. As an experimental example, a graph showing a distance of 4 mm closer to a target (eg, a wafer) as -4 mm, a graph showing a distance of 4 mm away from a target (eg, a wafer) as +4 mm It can be seen that the intensity of the substrate edge region is increased and the intensity of the central region of the substrate is decreased.

Although not shown as an embodiment, by providing a changeable relative distance between a plurality of lenses constituting the lens unit 442b, the irradiation area and the intensity of each area may be adjusted.

The front beam irradiation unit 400 - 2 according to the second embodiment will be described with reference to FIG. 8 . Referring to FIG. 8 , the front beam irradiation unit 400 - 2 may optionally include a reflector 445 , an image capture unit 446 , a detector 447 , and a collimator 448 . The reflector 445 may reflect a portion of the laser beam generated by the laser beam generator 500 and transmitted through the laser beam transmitting member 443 toward the lens module 442 , and may pass the rest. To this end, the reflection unit 445 may include a reflection mirror 145a installed at an angle of 45 degrees.

The imaging unit 446 may be coupled to the reflection unit 445 , and convert a laser beam passing through the reflection unit 445 into image data. The imaging unit 446 may analyze and inspect image data whether a designed laser beam is output from the laser beam generator 500 and whether a designed laser beam is transmitted through the laser beam transmitting member 443 .

The detector 447 may be coupled to the reflector 445 and sense the intensity of the laser beam incident on the reflector 445 . The detector 447 may be, for example, a photo detector. When the intensity of the laser beam is excessive, the substrate W may be rapidly heated. And, when the intensity of the laser beam is too weak, it may take a long time until the substrate W is heated. The detector 447 may determine whether the intensity of the laser beam is an appropriate value.

In the above description, the beam irradiation unit 400 is disposed below the substrate W to irradiate the laser beam to the back side of the substrate W, but the present invention is not limited thereto. The laser beam irradiation unit may be disposed above the substrate W and configured to irradiate the laser beam onto the upper surface of the substrate W.

Referring back to FIG. 2 , the beam irradiation unit 400 may be provided coupled to the X, Y, and Z stages 380 . The X, Y, and Z stages 380 may include a coupling unit 382 connected to the lifting driving unit 381 and coupled to the beam irradiation unit 400 . The position of the beam irradiation unit 400 may be adjusted with respect to the substrate W through the X, Y, and Z stages 380 . In addition, the laser beam intensity may be adjusted by adjusting the distance between the beam irradiation unit 400 and the substrate W through the lift driving unit 381 .

9 is a diagram illustrating the intensity of a laser irradiated to a 300 mm wafer by area according to an embodiment of the present invention. Referring to FIG. 9 , a 300 mm wafer WF is provided as an example of the substrate W. A high intensity of the laser beam is provided in a region of 0 mm to ±150 mm, which is the center corresponding to the edge portion with respect to the wafer WF. An example of a method of increasing the intensity of a laser beam has been described with reference to FIGS. 5 to 7 described above. As another example, as shown in FIG. 10 , a ring-shaped laser beam having intensities for each region may be irradiated or a ring-shaped laser beam may be combined to provide a high intensity of the edge portion. The shape of the laser beam may be adjusted by the beam shaper 520 to adjust the intensity of each area. Also, as described with reference to FIG. 7 , the intensity of the laser beam for each region may be adjusted by adjusting the distance between the end of the laser beam transmitting member 443 and the lens unit 442b.

11 to 13 are sequential views of a substrate processing method according to an embodiment of the present invention. A substrate processing method according to an embodiment of the present invention will be described with reference to FIGS. 11 to 13 .

11 illustrates a state in which a processing liquid puddle is formed on a substrate and heated according to a substrate processing method according to an embodiment of the present invention. When the processing liquid is supplied to the upper surface of the rotating substrate W while the substrate W is supported by the chuck pins 346 of the substrate support unit 340 , a puddle (liquid accumulation) is formed on the upper surface of the substrate W. can be formed Thereafter, the rotation of the substrate W is stopped, and the supply of the processing liquid from the liquid supply unit 390 is stopped. As a result, the surface of the substrate W is covered with the treatment liquid film C (formation of a puddle of the treatment liquid). Here, the treatment solution may be provided as an aqueous solution of phosphoric acid. The substrate W and the liquid film C of the processing liquid are heated to a temperature suitable for processing the substrate W. The substrate W and the liquid film C of the processing liquid may be heated by the beam irradiation unit 400 . The beam irradiation unit 400 in FIG. 7 irradiates a laser beam having an intensity provided when the laser beam transmitting member 443 (Fiber) is at the +4 mm position to the substrate W to evenly heat the entire surface of the substrate W. can do.

By maintaining the state in which the surface of the substrate W is covered with the liquid film C of the heated processing liquid for a predetermined period of time, the processing of the substrate W (eg, etching processing (wet etching process)) is performed. In this process, you may stir the processing liquid on the board|substrate W by rotating the board|substrate W about half rotation in a forward rotation and a reverse rotation direction. Thereby, etching is accelerated|stimulated, and the in-plane uniformity of etching amount can be improved.

12 is a diagram illustrating a state in which a rinse solution is substituted for a treatment solution puddle formed on a substrate according to a method for processing a substrate according to an embodiment of the present invention.

When the processing liquid process described with reference to FIG. 11 is finished, as illustrated in FIG. 12 , rotation of the substrate W is started. In addition, a rinsing liquid (eg, DIW) is supplied from the liquid supply unit 390 , whereby a rinsing process (rinsing process) of removing by-products generated by reaction with the process liquid from the surface of the substrate W is performed. is done When the rinse process is finished, the rotation of the substrate W is stopped and the supply of the rinse liquid from the liquid supply unit 390 is then stopped, so that the surface of the substrate W is covered by the liquid film of the stopped rinse liquid. do.

13 is a view illustrating a rinse solution (DIW) of an edge portion of a substrate by heating an edge portion of a substrate after replacing a treatment liquid puddle with a rinse solution (DIW) according to a substrate processing method according to an embodiment of the present invention; It shows the state of drying. In FIG. 13 , the laser beam applied to heat the edge portion of the substrate is a laser beam having a higher intensity of the edge portion than other portions as described with reference to FIG. 9 or 10 . In more detail, the intensity of the edge portion is sufficient to evaporate the rinse liquid, but the intensity of the other portions is to the extent that the rinse liquid does not evaporate.

After the processing liquid puddle is sufficiently replaced with the rinse liquid DIW, the rinse liquid DIW is present between the chuck pin 346 and the substrate W in a permeated state. This serves as a flow path for the treatment liquid in the process of re-forming the treatment liquid puddle, making it impossible to form the treatment liquid puddle. In the embodiment of the present invention, only the rinse solution DIW between the chuck pin 346 and the substrate W is selectively heated by partially drying the edge portion of the substrate W to evaporate the rinse solution DIW to dry it. Accordingly, as shown in FIG. 14 , the rinse solution DIW penetrating between the chuck pin 346 and the substrate W is removed. Since only a portion of the edge portion of the substrate W is selectively dried and the rinse solution of the pattern portion of the substrate W remains, the risk of pattern leaning can be reduced. In addition, in the process of re-forming the processing liquid puddle, by removing the rinse liquid DIW penetrating between the chuck pin 346 and the substrate W, which act as a flow path of the processing liquid, an additional drying process or of the substrate W is removed. Even if the entire surface is not completely dried, the forming step of the treatment solution puddle described with reference to FIG. 11 may be performed again.

When the target throughput for the substrate W is reached while repeating the process liquid puddle reforming process and the rinsing process, the substrate W is transferred to a supercritical process chamber where it is dried using a supercritical fluid, and the supercritical It may be dried by being treated with a fluid (eg, carbon dioxide) in the state. Before the substrate W is transferred to the supercritical process chamber, the rinse solution present on the pattern surface of the substrate W may be replaced with an anti-leaf solution. In one embodiment, the anti-leaning solution may be IPA. When the anti-leaf liquid is transferred to the supercritical process chamber, the liquid film is maintained on the pattern surface of the substrate during transfer.

FIG. 15 is a view for explaining FIG. 13, and is a view for explaining a phenomenon (Marangoni effect) in which the water film moves to the center of the wafer having a relatively high surface tension due to a decrease in the surface tension of the edge part according to the heating and drying of the edge part. . An operation according to an embodiment of the present invention will be additionally described with further reference to FIG. 15 .

FIG. 15 is a view for explaining FIG. 13, and is a view for explaining a phenomenon (Marangoni effect) in which the water film moves to the center of the wafer having a relatively high surface tension due to a decrease in the surface tension of the edge part according to the heating and drying of the edge part. . The graph shows the temperature for each position of the wafer WF, which is an example of the substrate W. When the edge portion is heat-dried, the surface tension of the edge portion is reduced, thereby moving the water film to the center of the wafer having a relatively high surface tension, thereby effectively forming a puddle of rinsing solution.

According to various embodiments of the present invention, compared to the process of supercritical drying each time after rinsing with a rinse solution to prevent pattern leaching, the treatment effect can be maintained while cost and time can be reduced. In addition, when the rinse solution is dried using a laser beam, the effect of preheating the edge portion of the substrate is accompanied, so that a temperature compensation effect can be expected for a temperature drop phenomenon occurring in the edge portion of the substrate.

Meanwhile, the substrate processing apparatus and the substrate processing method according to the above-described embodiments may be controlled by a controller (not shown). Configuration, storage and management of the controller can be realized in the form of hardware, software, or a combination of hardware and software. The file data and/or the software constituting the controller may include, for example, a volatile or non-volatile storage device, such as a read only memory (ROM), or, for example, a random access memory (RAM), whether erasable or rewritable. ), memory chips, devices or integrated circuits, or both optically or magnetically writable and mechanical (e.g. For example, it may be stored in a computer-readable storage medium of course.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to describe preferred or various embodiments for implementing the technical idea of the present invention, and the present invention can be used in various other combinations, changes, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. Therefore, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. In addition, the appended claims should be construed to include other embodiments as well. Such variant implementations should not be understood separately from the spirit or perspective of the present invention.

Claims (19)

An apparatus for processing a substrate, comprising:
a substrate supporting unit supporting the substrate and rotating the substrate;
a processing container provided in a cylindrical shape with an open top and provided to surround the substrate support unit;
a liquid supply unit including one or more liquid supply nozzles and supplying a processing liquid and a rinse liquid to the substrate supported by the substrate support unit;
A laser beam irradiation unit for heating the substrate by irradiating a laser beam to the substrate;
The laser beam irradiation unit,
A substrate processing apparatus irradiating a laser beam having a higher intensity of an edge portion of the substrate supported by the substrate support unit than other portions. According to claim 1,
The substrate processing apparatus is an aqueous solution of phosphoric acid. According to claim 1,
The rinsing solution is a pure substrate processing apparatus. According to claim 1,
The substrate support unit,
a window member provided in a material through which the laser beam irradiated from the laser beam irradiation unit is transmitted, and provided under the substrate;
a chuck pin supporting a side of the substrate and spaced apart from the window member by a predetermined distance;
a spin housing coupled to the window member and penetrating vertically to provide a path through which the laser beam is transmitted;
a driving member for rotating the spin housing;
The laser beam irradiation unit is provided under the window member. According to claim 1,
The laser beam irradiation unit,
a lens module including one or more lens units to refract the laser beam to process the laser beam into a shape corresponding to the substrate;
A laser beam transmitting member optically connected to the laser beam generator to transmit the laser beam,
The lens unit of the lens module and an end of the laser beam transmitting member are provided so as to be adjustable in distance. According to claim 1,
further comprising a controller;
The controller is
a first process of supplying the processing liquid to the substrate to form a processing liquid puddle;
a second process of heating the substrate and the processing liquid puddle;
a third step of supplying the rinse solution to the substrate to replace the treatment solution with the rinse solution;
performing a fourth process of heating an edge portion of the substrate on which the rinse solution remains to a higher temperature than other portions;
A substrate processing apparatus further sequentially performing the first to third processes after the fourth process. 7. The method of claim 6,
The heating of the second process uses a first laser beam having a uniform intensity with respect to the entire surface of the substrate,
In the heating of the fourth process, an intensity of the edge portion of the substrate is higher than that of another portion of the substrate, wherein the intensity of the edge portion is sufficient to evaporate the rinse solution, and the intensity of the other portion is higher than that of other portions of the substrate. A substrate processing apparatus using a second laser beam that cannot be evaporated. The substrate processing apparatus according to claim 1 ;
A substrate processing facility comprising a laser beam generator configured to generate a laser beam supplied to the substrate through a laser beam irradiation unit. 9. The method of claim 8,
The laser beam generator,
a laser source unit for outputting a laser beam from energy obtained from external power;
a beam shaper for converting the laser beam output from the laser source unit into a set beam shape;
and a beam expander that expands the laser beam shaped by the beam shaper into a parallel light type having a predetermined diameter. 9. The method of claim 8,
The laser beam irradiation unit,
A substrate processing facility optically coupled to the laser beam generator by a laser beam delivery member. A method for processing a substrate, comprising:
a first process of supplying a processing liquid to the substrate to form a processing liquid puddle;
a second process of heating the substrate and the processing liquid puddle;
a third step of supplying a rinse solution to the substrate to replace the treatment solution with the rinse solution;
performing a fourth process of heating an edge portion of the substrate on which the rinse solution remains to a higher temperature than other portions;
A substrate processing method further sequentially performing the first to third processes after the fourth process. 12. The method of claim 11,
The heating of the second process uses a first laser beam having a uniform intensity with respect to the entire surface of the substrate,
In the heating of the fourth process, an intensity of the edge portion of the substrate is higher than that of another portion of the substrate, wherein the intensity of the edge portion is sufficient to evaporate the rinse solution, and the intensity of the other portion is higher than that of other portions of the substrate. A method of processing a substrate using a second laser beam that cannot be evaporated. 12. The method of claim 11,
The substrate processing method wherein the processing liquid is an aqueous solution of phosphoric acid. 12. The method of claim 11,
The substrate processing method in which the rinse liquid is pure water. 12. The method of claim 11,
The heating of the substrate is made by a laser beam,
The laser beam is delivered to the substrate by a laser beam irradiation unit,
The laser beam irradiation unit,
a lens module including one or more lens units to refract the laser beam to process the laser beam into a shape corresponding to the substrate;
A laser beam transmitting member optically connected to the laser beam generator to transmit the laser beam,
The lens part of the lens module and the end of the laser beam transmitting member are provided so as to be adjustable in distance,
In the heating of the second process, the end of the laser beam transmitting member is heated in a state that is a first distance from the lens unit,
The heating in the fourth process is performed in a state where the end of the laser beam transmitting member is a second distance shorter than the first distance. 12. The method of claim 11,
The heating of the substrate is made by a laser beam,
The laser beam is delivered to the substrate by a laser beam irradiation unit,
A laser beam supplied to the substrate through a laser beam irradiation unit is generated by a laser beam generator,
The laser beam generator,
A substrate processing method for converting a laser beam output from energy obtained from external power into a set beam shape and transmitting the converted laser beam to the laser beam irradiation unit. 17. The method of claim 16,
The laser beam irradiation unit,
A substrate processing method optically coupled to the laser beam generator by a laser beam delivery member. 12. The method of claim 11,
When the processing of the substrate through the processing liquid is completed, using a supercritical fluid, a substrate processing method for drying the substrate. 19. The method of claim 18,
Before drying the substrate using the supercritical fluid,
A substrate processing method for forming a liquid film with the anti-leaf solution on the surface of the substrate by replacing the rinse solution with the anti-leaf solution.

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